CN106370990A - High-power and high-voltage silicon heap fully dynamic aging tester - Google Patents
High-power and high-voltage silicon heap fully dynamic aging tester Download PDFInfo
- Publication number
- CN106370990A CN106370990A CN201610464911.9A CN201610464911A CN106370990A CN 106370990 A CN106370990 A CN 106370990A CN 201610464911 A CN201610464911 A CN 201610464911A CN 106370990 A CN106370990 A CN 106370990A
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- circuit
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- test
- power
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
Abstract
The invention discloses a high-power and high-voltage silicon heap fully dynamic aging tester, which applies to the manufacturing field of electronic components and comprises a rectification and conversion circuit, a test power supply control circuit, a high-power forward current source generating circuit, a high-power reverse voltage source generating circuit, a sampling circuit and a display and alarm circuit. The test power supply control circuit includes a test current source control circuit, a test voltage control circuit, a current/voltage switching control circuit and a total test time timer circuit. A test sample is placed in a heated oil tank; the high power current and the voltage source are automatically switched between the positive and negative half cycles in such a way that the forward working current is exerted in the alternating current positive half cycles while the reverse working voltage is exerted in the negative half cycles. The rectification and conversion circuit heats and keeps the dielectric insulating oil at a constant temperature. Compared with the prior art, the technologies of the invention can provide more reliable, more efficient and more secure operational performances.
Description
Technical field
The present invention relates to a kind of test apparatuses in production of electronic components field, specifically, the present invention is a kind of full dynamic aging test instrument of high-power high voltage silicon stack.
Background technology
With scientific and technical progress, application in people's life for the electronic product is more and more extensive, different electronic products is due to the difference of its working environment and function, requirement to electronic devices and components is also different, in production of electronic components field, for producing qualified product, the product that it is produced is needed to carry out full dynamic test, to reach desired product reliability data.Because the fluctuation of voltage and the change of load can cause the overload of electronic product during electronic product uses, this is accomplished by electronic devices and components and has certain overload capacity, performance by testing produced electronic devices and components is tested to its overload capacity, with the upgrading of product, the high-power high voltage silicon stack full dynamic aging test instrument using at present cannot meet the testing requirement of large-current high-voltage silicon stack (high-voltage diode).
Content of the invention
The purpose of the present invention is to overcome the deficiencies in the prior art, there is provided a kind of high-power high voltage silicon stack full dynamic aging test instrument, by high-power high voltage silicon stack (high-voltage diode) is applied with positive overload operating current, the working inverse voltage of regulation and the test temperature of regulation and the accumulation test period length of regulation of regulation, to examine durability under full dynamic operating condition for the high-power high voltage silicon stack (high-voltage diode) and working life.
The present invention is achieved by the following technical solutions:
A kind of full dynamic aging test instrument of high-power high voltage silicon stack, including rectification transformating circuit, experiment power supply control circuit, there is circuit in high-power forward current source, there is circuit in high-power backward voltage source, sample circuit and Display and Alarm Circuit, it is characterized in that: experiment power supply control circuit comprises test current source control circuit, test voltage control circuit, current/voltage control switching circuit and test total duration timer circuit, test current source control circuit and test voltage control circuit control high-power forward current source to occur circuit and high-power backward voltage source that circuit occurs, high-power electric current and voltage source are in the automatic switchover of positive-negative half-cycle, exchange positive half cycle and apply positive operating current, negative half period applies working inverse voltage；Test specimen is in heating oil tank, rectification transformating circuit is heated and constant temperature to dielectric insulation oil, sample circuit detection operating current, running voltage detection fluctuation, drift sampling and test temperature control, and Display and Alarm Circuit shows forward and reverse operating current, working inverse voltage, test temperature and test total duration.
The present invention compared with prior art has the advantages that
1. reliable operation, realize the requirements of full dynamic aging test；
2. efficiency high, safe operation.
Brief description
Fig. 1 is high-power high voltage silicon stack full dynamic aging test instrument fundamental diagram.
Specific embodiment
Below in conjunction with Figure of description, present disclosure is described further:
The present invention, by high-power high voltage silicon stack (high-voltage diode) is applied with positive overload operating current, the working inverse voltage of regulation and the test temperature of regulation and the accumulation test period length of regulation of regulation, to examine durability under full dynamic operating condition for the high-power high voltage silicon stack (high-voltage diode) and working life.
The present invention be directed to above-mentioned requirements and the full dynamic aging test instrument of a kind of high-power high voltage silicon stack that designs, occur circuit, high-power backward voltage source that circuit, sample circuit and Display and Alarm Circuit occur including rectification transformating circuit, experiment power supply control circuit, high-power forward current source
Because high-power high voltage silicon stack (high-voltage diode) degradation has the following characteristics that
(1) forward conduction voltage drop is big, is more than 10 times of general heavy-duty diode；
(2) multiple sample tandem tests, accumulation forward voltage drop super large；
(3) continuously (168 ~ 1000 hours) are tested for a long time；
(4) diode is nonlinear device, and test specimen itself is again high power device, thus cold conditions and hot when diode internal resistance change drastically；
Above high-power high voltage silicon stack is high to the stability of large power supply itself and the stability requirement of test electric current.The design passes through using high-power electric current and voltage source in the auto-changeover control technology of positive-negative half-cycle and analogue load circuit, reaches and applies positive operating current exchanging positive half cycle, negative half period applies working inverse voltage；Medium (insulating oil) is heated and constant temperature；Above many-sided combination, realizes the requirements of the full dynamic aging test of large-current high-voltage silicon stack (high-voltage diode).The circuit such as over-current detection warning in high-power test power source loads pipe overvoltage detection control technology and test, timely cut-out when preferably achieving protection during overload and losing efficacy.
Claims (3)
1. the full dynamic aging test instrument of a kind of high-power high voltage silicon stack, including rectification transformating circuit, experiment power supply control circuit, there is circuit in high-power forward current source, there is circuit in high-power backward voltage source, sample circuit and Display and Alarm Circuit, it is characterized in that: experiment power supply control circuit comprises test current source control circuit, test voltage control circuit, current/voltage control switching circuit and test total duration timer circuit, test specimen is in heating oil tank, high-power electric current and voltage source automatically switch in positive-negative half-cycle, exchange positive half cycle and apply positive operating current, negative half period applies working inverse voltage, rectification transformating circuit is heated and constant temperature to dielectric insulation oil.
2. the full dynamic aging test instrument of high-power high voltage silicon stack according to claim 1 it is characterised in that: sample circuit detection operating current, running voltage detection fluctuation, drift sampling and test temperature control.
3. the full dynamic aging test instrument of high-power high voltage silicon stack according to claim 1 it is characterised in that: Display and Alarm Circuit shows forward and reverse operating current, working inverse voltage, test temperature and test total duration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610464911.9A CN106370990A (en) | 2016-06-24 | 2016-06-24 | High-power and high-voltage silicon heap fully dynamic aging tester |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610464911.9A CN106370990A (en) | 2016-06-24 | 2016-06-24 | High-power and high-voltage silicon heap fully dynamic aging tester |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106370990A true CN106370990A (en) | 2017-02-01 |
Family
ID=57880665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610464911.9A Withdrawn CN106370990A (en) | 2016-06-24 | 2016-06-24 | High-power and high-voltage silicon heap fully dynamic aging tester |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106370990A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108020767A (en) * | 2017-10-24 | 2018-05-11 | 朝阳无线电元件有限责任公司 | A kind of seasoned experimental provision of semiconductor devices and method |
-
2016
- 2016-06-24 CN CN201610464911.9A patent/CN106370990A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108020767A (en) * | 2017-10-24 | 2018-05-11 | 朝阳无线电元件有限责任公司 | A kind of seasoned experimental provision of semiconductor devices and method |
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| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C04 | Withdrawal of patent application after publication (patent law 2001) | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20170201 |