CN103243885B - Low emissivity window still wall film system of a kind of low cost Color tunable and preparation method thereof - Google Patents
Low emissivity window still wall film system of a kind of low cost Color tunable and preparation method thereof Download PDFInfo
- Publication number
- CN103243885B CN103243885B CN201310148800.3A CN201310148800A CN103243885B CN 103243885 B CN103243885 B CN 103243885B CN 201310148800 A CN201310148800 A CN 201310148800A CN 103243885 B CN103243885 B CN 103243885B
- Authority
- CN
- China
- Prior art keywords
- film
- silicon nitride
- low
- visible light
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title abstract description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 91
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 14
- 238000005496 tempering Methods 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 300
- 239000002184 metal Substances 0.000 claims description 56
- 229910052751 metal Inorganic materials 0.000 claims description 56
- 230000031700 light absorption Effects 0.000 claims description 52
- 239000010410 layer Substances 0.000 claims description 34
- 230000001681 protective effect Effects 0.000 claims description 30
- 238000004544 sputter deposition Methods 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- 238000007747 plating Methods 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 15
- 239000013077 target material Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 238000005546 reactive sputtering Methods 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims description 8
- 239000005341 toughened glass Substances 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 239000002346 layers by function Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 9
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 238000009776 industrial production Methods 0.000 abstract description 4
- 239000010949 copper Substances 0.000 description 11
- 238000001228 spectrum Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 7
- 229910010421 TiNx Inorganic materials 0.000 description 6
- 239000004417 polycarbonate Substances 0.000 description 6
- 229920000515 polycarbonate Polymers 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 239000003086 colorant Substances 0.000 description 5
- 238000004134 energy conservation Methods 0.000 description 5
- 238000005265 energy consumption Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000003365 glass fiber Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229920006351 engineering plastic Polymers 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- 238000001579 optical reflectometry Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004832 voltammetry Methods 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
Abstract
Low emissivity window still wall film system that the invention discloses a kind of low cost Color tunable and preparation method thereof.This film system self-induced transparency substrate upwards comprises the lower floor's silicon nitride film, visible absorption film, metallic film and the upper silicon nitride diaphragm that are coated with on a transparent substrate successively.Film of the present invention ties up to the average reflectance of visible-range to sunshine 5% ~ 30%, and radiance is less than 10%.Simultaneously film of the present invention ties up to and keeps under the low reflection of visible ray, infrared low-E prerequisite, and also having appearance color can carry out by demand the feature that regulates, and colourful appearance color can achieve the landscaping effect of window still wall to building better.Owing to have employed upper and lower layer silicon nitride diaphragm sandwich structure, film system of the present invention also possesses can tempering characteristic.The Low emissivity window still wall film system of Color tunable of the present invention can be directly coated with in large-area transparent substrate by industrialization magnetron sputtering preparation method continuously, is easy to realize low cost, large-scale industrial production.
Description
Technical Field
The invention relates to the field of building energy conservation, in particular to a low-cost color-adjustable low-radiation window sill wall film system and a preparation method thereof.
Background
Along with the advocation of energy conservation and emission reduction and low-carbon life, all countries in the world increasingly pay more attention to energy conservation and environmental protection of buildings. According to statistics, the energy consumption of Chinese buildings accounts for more than 30% of the total energy consumption of society, and the proportion is increased year by year along with the enlargement of urbanization scale. Researches show that the window is a main channel for exchanging energy between buildings and the outside, and the energy consumption of the glass window accounts for 40-50% of the energy consumption of all buildings. Therefore, reducing the energy exchange between the window and the sill walls above and below the window is a key to reducing the energy consumption of the whole building.
In architecture, the solid wall surface between the upper window and the lower window of the outer facade of the building is called a window sill wall. As the wall, the weight of the window frame and the window sash can be ignored, so the sill wall can be regarded as not bearing load, and the area of the sill wall accounts for 15% -30% of the wall surface. Unlike window glass, sill walls do not need to have light transmission properties. Along with the popularization of building curtain walls and the appearance of various new materials, the aesthetic expression of the window sill wall is richer and more flexible, and a larger imagination space can be created for beautifying the appearance of a building.
Most of the existing window sill walls do not have the low radiation function, cannot play a role in isolating indoor and outdoor heat exchange, and cannot play an energy-saving and environment-friendly effect. The sill wall with the area occupying 15% -30% of the wall surface plays an important role in energy exchange between buildings and the outside, so that the research and development of novel sill wall coating products with low radiation function are urgent.
The invention aims to disclose a low-cost color-adjustable low-radiation window sill wall film system and a preparation method thereof, which are effectively complementary with a glass curtain wall. The window sill wall has the advantages that the excellent low-radiation effect is kept, the light pollution is effectively reduced, the energy is saved, the environment is protected, meanwhile, the appearance color can be simply and conveniently adjusted according to the requirement, and the window sill wall can better realize the beautifying effect of the window sill wall on the building due to rich and colorful appearance colors.
Disclosure of Invention
The invention discloses a low-cost color-adjustable low-radiation window sill wall film system and a preparation method thereof. Aims to provide an adjustable temperable film system with low cost, low radiation, rich appearance and color, which is suitable for industrial production. The decorative board not only can play the effects of energy conservation and environmental protection, but also can play the role of decoration, is particularly suitable for beautifying buildings, and meets the requirements of customers on attractiveness, diversity and individuation of products.
The structure of the low-cost color-adjustable low-radiation window sill wall film system is shown as the attached figure 1, and on a transparent substrate, the film system sequentially comprises from bottom to top: a lower layer silicon nitride film, a visible light absorption film, a metal film and an upper layer silicon nitride protective film which are plated on the transparent substrate. Namely: transparent substrate/lower silicon nitride film/visible light absorption film/metal film/upper silicon nitride protective film. Wherein:
the transparent substrate 1 is transparent glass or plastic and is the main body of the window sill wall. Glass such as tempered glass, float glass, hollow glass, bulletproof glass and organic glass can be selected; high-strength engineering plastics such as Polycarbonate (PC) resin, PBT plus glass fiber, nylon plus glass fiber, PPS plus glass fiber, PPO plus glass fiber, glass reinforced plastics, polycarbonate and PMMA can also be selected;
the lower silicon nitride film 2 is an auxiliary color adjusting film, a protective film and an antireflection film, and the thickness of the lower silicon nitride film is 0 nm-200 nm;
the visible light absorption film 3 is an oxide, a nitride or an oxynitride which can absorb visible light and is used for reducing the visible light reflectivity of the film system, thereby reducing the light pollution of buildings. Meanwhile, the visible light absorption film 3 is also a main color adjusting layer of the film system. The thickness is 20 nm-200 nm. Preferably, a NiCrO film with low cost and simple preparation method is selected;
the metal film 4 is various metal films with high infrared reflection, is a low-radiation functional film of a window sill wall film system, plays a role in isolating indoor and outdoor heat exchange, and has the thickness of 50 nm-200 nm;
the upper silicon nitride protective film 5 is a protective layer of a metal film, and the thickness of the protective layer is 0 nm-200 nm.
As shown in the attached figure 1, when the low-cost color-adjustable low-radiation window sill wall film system disclosed by the invention is used, one side of a coated film of a substrate faces indoors, and the side without the coated film faces outdoors. Because the window sill wall film is opaque, the indoor side of the window sill wall can be decorated according to actual requirements without influencing the appearance color of the window sill wall facing the outdoor.
The film system of the invention utilizes the visible light absorption film 3 and the silicon nitride antireflection film 2 which have certain absorption to visible light to reduce the reflectivity of the film system to the visible light, so that the average reflectivity of the visible light towards the outdoor side without a film is between 5 and 30 percent, thereby effectively reducing light pollution, saving energy and protecting environment. Different from the high requirement of the solar heat absorption film on the light absorption rate, the absorption rate of the visible light absorption film 3 used in the invention is not high, and only 70-80% is needed, thereby reducing the harsh requirements on the film material type and the preparation process, and greatly reducing the product cost.
The low-radiation heat insulation characteristic of the metal film is utilized to isolate indoor and outdoor heat exchange, so that the radiation rate of one side facing an indoor coating film is less than 10 percent. Therefore, the film system of the present invention also has an excellent low-radiation effect.
Meanwhile, on the premise of keeping low reflection and low radiance of visible light, the film system can adjust the appearance color of the film system according to requirements by adjusting the thicknesses of the visible light absorption film 3 and the lower silicon nitride film 2. Wherein, the visible light absorption film 3 is a main color adjusting layer, the lower silicon nitride film 2 is an auxiliary color adjusting layer, and the color adjusting range of the film system can be expanded by utilizing the auxiliary adjustment of the lower silicon nitride film 2. The appearance color of the outdoor side of the window sill wall can be simply and conveniently adjusted by controlling and adjusting the thicknesses of the visible light absorption film (3) and the lower silicon nitride film (2) during film coating.
The interference effect of the multilayer film can be utilized to realize the adjustment of the visible light reflectivity and the color of the film system, and the specific physical principle is as follows:
for optical thin film systems, the physical basis for the design calculation is maxwell's equations, in which the transmission of light is studied is the propagation of electromagnetic waves in a multilayer medium. In actual calculation, maxwell's equations are usually converted into a transmission matrix method and optical admittance to calculate the spectral characteristics of the optical film. And solving the electric field and the magnetic field on two adjacent layers by using a Maxwell equation set so as to obtain a transmission matrix, and then popularizing the single-layer conclusion to the whole medium space, thereby calculating the transmission coefficient and the reflection coefficient of the whole multilayer medium.
For a single layer film, boundary conditions of an electric field and a magnetic field are utilized to obtain:
wherein,1in order to be the phase thickness,θ1is the angle of incidence;
for p component, η1=n1/cosθ1For the s component, η1=n1cosθ1。
Order to <math>
<mrow>
<mfenced open='[' close=']'>
<mtable>
<mtr>
<mtd>
<mi>B</mi>
</mtd>
</mtr>
<mtr>
<mtd>
<mi>C</mi>
</mtd>
</mtr>
</mtable>
</mfenced>
<mo>=</mo>
<mfenced open='[' close=']'>
<mtable>
<mtr>
<mtd>
<msub>
<mrow>
<mi>cos</mi>
<mi>δ</mi>
</mrow>
<mn>1</mn>
</msub>
</mtd>
<mtd>
<mfrac>
<mi>i</mi>
<msub>
<mi>η</mi>
<mn>1</mn>
</msub>
</mfrac>
<msub>
<mrow>
<mi>sin</mi>
<mi>δ</mi>
</mrow>
<mn>1</mn>
</msub>
</mtd>
</mtr>
<mtr>
<mtd>
<msub>
<mi>iη</mi>
<mn>1</mn>
</msub>
<msub>
<mrow>
<mi>sin</mi>
<mi>δ</mi>
</mrow>
<mn>1</mn>
</msub>
</mtd>
<mtd>
<mi>cos</mi>
<msub>
<mi>δ</mi>
<mn>1</mn>
</msub>
</mtd>
</mtr>
</mtable>
</mfenced>
<mfenced open='[' close=']'>
<mtable>
<mtr>
<mtd>
<mn>1</mn>
</mtd>
</mtr>
<mtr>
<mtd>
<msub>
<mi>η</mi>
<mn>2</mn>
</msub>
</mtd>
</mtr>
</mtable>
</mfenced>
<mo>,</mo>
</mrow>
</math> This is the characteristic equation for the film,
then <math>
<mrow>
<msub>
<mi>M</mi>
<mn>1</mn>
</msub>
<mo>=</mo>
<mfenced open='[' close=']'>
<mtable>
<mtr>
<mtd>
<msub>
<mrow>
<mi>cos</mi>
<mi>δ</mi>
</mrow>
<mn>1</mn>
</msub>
</mtd>
<mtd>
<mfrac>
<mi>i</mi>
<msub>
<mi>η</mi>
<mn>1</mn>
</msub>
</mfrac>
<msub>
<mrow>
<mi>sin</mi>
<mi>δ</mi>
</mrow>
<mn>1</mn>
</msub>
</mtd>
</mtr>
<mtr>
<mtd>
<msub>
<mi>iη</mi>
<mn>1</mn>
</msub>
<msub>
<mrow>
<mi>sin</mi>
<mi>δ</mi>
</mrow>
<mn>1</mn>
</msub>
</mtd>
<mtd>
<msub>
<mrow>
<mi>cos</mi>
<mi>δ</mi>
</mrow>
<mn>1</mn>
</msub>
</mtd>
</mtr>
</mtable>
</mfenced>
</mrow>
</math> Referred to as the feature matrix of the film, which contains all the useful parameters of the film.
The admittance of the film and substrate combination is Y ═ C/B,
the energy reflectivity is <math>
<mrow>
<mi>R</mi>
<mo>=</mo>
<mrow>
<mo>(</mo>
<mfrac>
<mrow>
<msub>
<mi>η</mi>
<mn>0</mn>
</msub>
<mo>-</mo>
<mi>Y</mi>
</mrow>
<mrow>
<msub>
<mi>η</mi>
<mn>0</mn>
</msub>
<mo>+</mo>
<mi>Y</mi>
</mrow>
</mfrac>
<mo>)</mo>
</mrow>
<msup>
<mrow>
<mo>(</mo>
<mfrac>
<mrow>
<msub>
<mi>η</mi>
<mn>0</mn>
</msub>
<mo>-</mo>
<mi>Y</mi>
</mrow>
<mrow>
<msub>
<mi>η</mi>
<mn>0</mn>
</msub>
<mo>+</mo>
<mi>Y</mi>
</mrow>
</mfrac>
<mo>)</mo>
</mrow>
<mo>*</mo>
</msup>
<mo>,</mo>
</mrow>
</math>
Transmittance of <math>
<mrow>
<mi>T</mi>
<mo>=</mo>
<mfrac>
<mrow>
<msub>
<mrow>
<mn>4</mn>
<mi>η</mi>
</mrow>
<mn>0</mn>
</msub>
<msub>
<mi>η</mi>
<mn>2</mn>
</msub>
</mrow>
<mrow>
<mrow>
<mo>(</mo>
<msub>
<mi>η</mi>
<mn>0</mn>
</msub>
<mi>B</mi>
<mo>+</mo>
<mi>C</mi>
<mo>)</mo>
</mrow>
<msup>
<mrow>
<mo>(</mo>
<msub>
<mi>η</mi>
<mn>0</mn>
</msub>
<mi>B</mi>
<mo>+</mo>
<mi>C</mi>
<mo>)</mo>
</mrow>
<mo>*</mo>
</msup>
</mrow>
</mfrac>
<mo>.</mo>
</mrow>
</math>
By applying the method to the multilayer film, the transmission and reflection spectral characteristics of the multilayer film system can be obtained.
Since the transmission (reflection) color of the film system is determined by the relative intensities of the individual monochromatic lights in the transmitted (reflection) light of the thin film, the dominant wavelength in the spectrum corresponds to the dominant color hue observed by the human eye. Therefore, the purpose of adjusting the color of the film system can be achieved by adjusting the position of the dominant wavelength in the transmission spectrum and the reflection spectrum of the multilayer film system.
The invention is also characterized in that the silicon nitride film layers used at the lowest layer and the uppermost layer in the film system are superhard, wear-resistant and stable materials at high temperature, have excellent performance as the protective layer of the film system, and can greatly improve the weather resistance and the stability of the film system. Silicon nitride films are often used as protective films for Low-glass applications, and are resistant to high temperatures, prevent the ingress of external oxygen and impurities, and prevent oxidation of the metal film when used in the window sill wall film system of the present invention. Because the sandwich structure of the upper layer silicon nitride protective film and the lower layer silicon nitride protective film is adopted, the film system has the toughening property, and the film system plated on the glass substrate can be toughened.
The invention is also characterized in that when a substrate which does not need to be toughened is used, such as a transparent plastic substrate or a toughened glass substrate, the film system can be simplified, and the lower silicon nitride film 2 can be omitted, so that the thickness of the silicon nitride film is 0 nm; when the metal film 4 is a metal such as aluminum, which can generate a dense passivation film on the surface, the upper silicon nitride protective film can be omitted, so that the thickness of the upper silicon nitride protective film is 0 nm. In these cases, the cost can be further reduced.
The low-cost color-adjustable low-radiation window sill wall film system disclosed by the invention can be continuously plated on a large-area transparent substrate by an industrialized magnetron sputtering preparation method. The preparation process comprises the following steps:
first, the lower silicon nitride film 2 is plated on a transparent substrate 1 by magnetron sputtering. Silicon target materials can be adopted, and nitrogen is taken as reaction gas to carry out reactive sputtering plating; or a silicon nitride ceramic target material can be adopted to directly carry out sputtering plating;
next, a visible light absorbing film 3 is plated on the lower silicon nitride film 2. The metal or alloy target material can be adopted, and oxygen, nitrogen or oxygen and nitrogen are used as reaction gases for reactive sputtering plating; or directly sputtering and plating by adopting oxide, nitride or oxynitride ceramic target materials;
thirdly, directly sputtering and plating a layer of infrared high-reflection metal film 4 on the visible light absorption film 3 by adopting a metal target;
finally, the upper layer silicon nitride protective film 5 is plated on the metal film 4. The Si target can be adopted, and nitrogen is taken as reaction gas to carry out reactive sputtering plating; or directly sputtering by adopting a silicon nitride ceramic target.
The window sill wall film system of the invention has the following advantages:
1. the average visible light reflectivity of the window sill wall towards the outdoor side without the film is 5-30%; the radiance of one side facing the indoor coating is less than 10%, and the indoor and outdoor heat exchange is effectively isolated. Thereby not only effectively reducing the light pollution of the building curtain wall, but also playing the roles of building energy conservation and environmental protection.
2. The film system of the invention also has the characteristic that the appearance color can be adjusted according to the requirement on the premise of keeping low reflection and low radiance of visible light. In the preparation process, the color of the film system can be simply adjusted by only controlling the thicknesses of the lower silicon nitride film and the visible light absorption film. Because the film system of the invention is not light-tight, the indoor side of the window sill wall can be decorated according to the actual requirement without influencing the appearance color of the window sill wall facing the outdoor.
3. The film system of the invention uses the silicon nitride material which is superhard, wear-resistant and stable at high temperature, thereby improving the weather resistance and stability of the film system and prolonging the service life of the product. Meanwhile, as the sandwich structure of the upper and lower silicon nitride protective films is adopted, the film system also has the toughening property.
4. The membrane system of the invention has simple structure, wide source of used materials, low cost and simple preparation method, is completely compatible with large-area industrial production methods, and can be directly used for industrial production.
Drawings
FIG. 1 is a low cost color tunable low radiation window sill wall film system structure of the present invention, wherein the meaning of each number is as follows:
1. a transparent substrate; 2. a lower silicon nitride film; 3. a visible light absorbing film; 4. a metal thin film; 5. and an upper silicon nitride protective film.
FIG. 2 is a low-cost color-adjustable low-radiation window sill wall system reflection spectrum with NiCrO as a visible light absorption film and Al as a metal film, and a lower silicon nitride film and an upper silicon nitride protective film are omitted;
FIG. 3 is a reflection spectrum of a temperable low-cost color-adjustable low-radiation window sill wall system with NiCrO as a visible light absorption film;
FIG. 4 is a low-cost color-adjustable reflection spectrum of a low-radiation window sill wall system with NiCrN as a visible light absorption film and Al as a metal film, wherein an upper silicon nitride protective film is omitted;
FIG. 5 is a view of TiNxOyThe lower layer of nitrogen is omitted for the visible light absorption filmThe low-cost color-adjustable low-radiation window sill wall film system reflection spectrum of the silicon film;
Detailed Description
In order to make the contents, technical solutions and advantages of the present invention more apparent, the present invention is further described below with reference to specific examples, which are only used for illustrating the present invention, and the present invention is not limited to the following examples. The following detailed description of embodiments of the invention refers to the accompanying drawings in which:
example 1:
NiCrO is used as a visible light absorption film, Al is used as a metal film, and meanwhile, the low-cost color-adjustable low-radiation window threshold wall film system with lower silicon nitride layer and upper silicon nitride layer and the preparation method thereof are omitted.
The low-cost color-adjustable low-radiation window sill wall film system structure is shown in figure 1, and a film system on a transparent substrate sequentially comprises a NiCrO visible light absorption film and a metal Al film which are plated on the transparent substrate from bottom to top. Namely: transparent substrate/NiCrO visible light absorbing film/metallic Al film. Wherein:
the transparent substrate is toughened glass, and the thickness of the transparent substrate is 2-20 mm;
the thickness of the NiCrO visible light absorption film is 20-120 nm, and the appearance color of the film system is adjusted by adjusting NiCrO films with different thicknesses;
the thickness of the metal film Al film is 100-300 nm.
The film system of the embodiment can be continuously plated on a large-area toughened glass substrate by an industrialized magnetron sputtering preparation method. The preparation process comprises the following steps:
firstly, a NiCr alloy target is adopted on a toughened glass substrate by a magnetron sputtering method, oxygen is used as reaction gas to perform reactive sputtering plating to prepare a NiCrO visible light absorption film with the thickness of 20-120 nm, and the thickness of the NiCrO film is adjusted by controlling the sputtering time so as to realize the color adjustment of a film system;
then, a metal Al target is adopted on the NiCrO visible light absorption film, and an infrared high-reflection metal Al film is directly sputtered and plated, wherein the thickness is 200nm, the sputtering power is 1kW, and the Ar gas flow is 50 sccm. A compact aluminum oxide passivation layer can be automatically generated on the surface of the Al film, and the effect of protecting the Al metal film is achieved.
The film system has the advantages that toughened glass is adopted, so that toughening is not needed, and the upper layer silicon nitride film and the lower layer silicon nitride film are omitted, so that the cost of the product is further reduced.
The film system adopts oxide as a visible light absorption film, the reflection spectrum of the film system is shown in figure 2, and the color coordinate in CIELAB color space is shown in table 1. Under various colors, the average emissivity in the visible light range is 5-30%, and the emissivity is less than 10%.
TABLE 1
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | |
L* | 34.4 | 28.4 | 26.5 | 34.8 | 48.6 | 51.7 | 52.5 | 52.6 | 51.1 | 45.6 | 43.9 | 42.6 | 43.9 |
a* | 10 | 10.2 | 8.6 | 0 | -3.1 | -3.2 | -3.1 | -2 | 0 | 4.8 | 5.3 | 4.1 | -0.9 |
b* | 14.9 | 0 | -8.6 | -16.8 | -6.2 | 0 | 3.1 | 10 | 13.7 | 9.6 | 5.3 | 0 | -0.9 |
Example 2:
a temperable low-cost color-adjustable low-radiation window sill wall film system taking NiCrO as a visible light absorption film and a preparation method thereof.
The low-cost color-adjustable low-radiation window sill wall film system structure is shown in figure 1, and a film system on a transparent substrate sequentially comprises a lower silicon nitride film, a NiCrO visible light absorption film, a metal Cu film and an upper silicon nitride protective film which are plated on the transparent substrate from bottom to top. Namely: transparent substrate/lower silicon nitride film/NiCrO visible light absorption film/metal Cu film/upper silicon nitride protective film. Wherein:
the transparent substrate is made of voltammetry glass and has the thickness of 10 mm;
the thickness of the lower layer of silicon nitride is 20-200 nm, and the lower layer of silicon nitride is used as a toughening protective layer and an auxiliary color adjusting layer;
the visible light absorption film 3 is a NiCrO visible light absorption film, the thickness of the visible light absorption film is 20-120 nm, and the appearance color of the film system is adjusted by adjusting the thickness of the NiCrO film 3 and matching with the thickness of the lower silicon nitride film 2;
the metal film 4 is a metal Cu film with high infrared reflectivity, and the thickness is 100 nm;
the thickness of the upper silicon nitride protective film 5 is 50 nm.
The film system of the embodiment can be continuously plated on a large-area furnace-type glass substrate by an industrialized magnetron sputtering preparation method. The preparation process comprises the following steps:
firstly, a silicon nitride ceramic target material is adopted on a glass substrate by a magnetron sputtering method, a lower silicon nitride film 2 with the thickness of 20-200 nm is directly sputtered and plated, the sputtering power is 1kW, the medium frequency is 100kHz, and the Ar gas flow is 100 sccm. The thickness of the silicon nitride film is adjusted by controlling the sputtering time so as to realize the color adjustment of the film system;
secondly, a NiCr alloy target is adopted on the lower silicon nitride film 2, oxygen is used as reaction gas to perform reactive sputtering to prepare a NiCrO visible light absorption film 3 with the thickness of 20-120 nm, and the thickness of the NiCrO film is adjusted by controlling the sputtering time so as to realize the color adjustment of the film system;
thirdly, directly sputtering and plating a layer of infrared high-reflection metal Cu film on the NiCrO visible light absorption film 3 by adopting a metal Cu target, wherein the thickness is 100nm, the sputtering power is 1kW, and the Ar gas flow is 50 sccm;
and finally, directly sputtering and plating an upper silicon nitride protective film with the thickness of 50nm on the metal Cu film by using a magnetron sputtering method and adopting a silicon nitride ceramic target material, wherein the sputtering power is 1kW, the medium frequency is 100kHz, and the Ar gas flow is 100 sccm.
The film system has the toughening characteristic because the upper layer and the lower layer are both made of silicon nitride films. After plating the whole film system, tempering treatment can be carried out.
The film system adopts oxide as a visible light absorption film, the reflection spectrum of the film system is shown in figure 3, and the color coordinates in CIELAB color space are shown in table 2. Under various colors, the average emissivity in the visible light range is 5-30%, and the emissivity is less than 10%.
TABLE 2
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | |
L* | 27.7 | 40.4 | 47.6 | 50.9 | 44.6 | 31.1 | 39.7 | 40.8 | 42.5 | 42.5 | 38.8 | 36.2 |
a* | 0 | -5 | -2.7 | 0 | 5.5 | 0 | -10.3 | -12.7 | -11.4 | 0 | 20.7 | 17.3 |
b* | 0 | -6.6 | 0 | 7.1 | 13.5 | -19.8 | -10.3 | 0 | 11.5 | 19 | 0 | 17.4 |
Example 3:
the NiCrN is used as a visible light absorption film, the Al is used as a metal film, and the low-cost color-adjustable low-radiation window sill wall film system with an upper silicon nitride protective film is omitted.
The low-cost color-adjustable low-radiation window sill wall film system structure is shown in figure 1, and a film system on a transparent substrate sequentially comprises a lower silicon nitride film, a NiCrN visible light absorption film and a metal Al film which are plated on the transparent substrate from bottom to top. Namely: transparent substrate/underlying silicon nitride film/NiCrN visible light absorbing film/metallic Al film. Wherein:
the transparent substrate is organic glass and has the thickness of 5 mm;
the thickness of the lower layer of silicon nitride is 0-200 nm, and the lower layer of silicon nitride is used as an auxiliary color adjusting layer; (ii) a
The visible light absorption film is a NiCrN visible light absorption film, the thickness of the visible light absorption film is 20-120 nm, and the appearance color of the film system is adjusted by adjusting the thickness of the NiCrN film and adjusting the thickness of the lower silicon nitride film;
the metal film 4 is a metal Al film with high infrared reflectivity, and the thickness is 200 nm;
the thickness of the upper silicon nitride protective film 5 is 100 nm.
The film system of the embodiment can be continuously plated on a large-area metal transparent substrate by an industrialized magnetron sputtering preparation method. The preparation process comprises the following steps:
firstly, a silicon nitride ceramic target material is adopted on an organic glass substrate by a magnetron sputtering method, a lower silicon nitride film with the thickness of 0-200 nm is directly sputtered and plated, the sputtering power is 1kW, the medium frequency is 100kHz, and the Ar gas flow is 100 sccm. The thickness of the silicon nitride film is adjusted by controlling the sputtering time so as to realize the color adjustment of the film system;
secondly, performing reactive sputtering on the lower silicon nitride film by adopting a NiCr alloy target material and taking nitrogen as reaction gas to prepare a NiCrN visible light absorption film with the thickness of 20-200 nm, and adjusting the thickness of the NiCrN film by controlling the sputtering time to realize the color adjustment of the film system, wherein the sputtering power is 1kW, the medium-frequency is 30kHz, the Ar gas flow is 50sccm, and the nitrogen gas flow is 100 sccm;
and finally, directly sputtering and plating an infrared high-reflection aluminum film on the NiCrN visible light absorption film by adopting a metal aluminum target, wherein the thickness is 200nm, the sputtering power is 1kW, and the Ar gas flow is 50 sccm.
The film system adopts a metal Al film, and a compact aluminum oxide passivation layer can be automatically generated on the surface of the Al film, so that the effect of protecting the Al metal film is achieved. Therefore, the upper silicon nitride film can be omitted, and the cost of the product is further reduced.
The film system adopts nitride as a visible light absorption film, the reflection spectrum of the film system is shown in figure 4, and the color coordinate in CIELAB color space is shown in table 3. Under various colors, the average emissivity in the visible light range is 5-30%, and the emissivity is less than 10%.
TABLE 3
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | |
L* | 25.9 | 41.2 | 41.5 | 43.4 | 35.4 | 48.8 | 53.4 | 55 | 58 | 44.8 | 43.2 | 43.1 | 55.8 |
a* | 0 | 2 | 5.7 | -5 | 3.1 | -8.3 | -10.5 | -8.2 | -2.7 | 16.6 | 19 | 13.3 | -20.2 |
b* | -2.5 | 2 | 5.7 | -4.7 | -17.1 | -11 | 6.6 | 16.9 | 25.4 | 3.5 | -8.6 | -14.3 | 10.4 |
Example 4:
so as to be TiNxOyThe low-cost color-adjustable low-radiation window threshold wall film system which is a visible light absorption film and omits a lower silicon nitride film and a preparation method thereof.
The low-cost color-adjustable low-radiation window sill wall film system structure is shown in figure 1, and the film system on the transparent substrate sequentially comprises TiN coated on the transparent substrate from bottom to topxOyVisible light absorbing filmA metal Cu film and an upper silicon nitride protective film. Namely: transparent substrate/TiNxOyVisible light absorption film/metal Cu film/upper layer silicon nitride protective film. Wherein:
the transparent substrate is Polycarbonate (PC) resin which is thermoplastic engineering plastic with excellent performance and the thickness of the transparent substrate is 2 mm;
the visible light absorption film is TiNxOyA visible light absorbing film with a thickness of 20-120 nm, and TiN is adjustedxOyThe film thickness is used for adjusting the appearance color of the film system;
the metal film is a copper film with high infrared reflectivity, and the thickness of the metal film is 200 nm;
the thickness of the upper silicon nitride protective film is 200 nm.
The film system of the embodiment can be continuously plated on a large-area accumulated carbonic ester (PC) resin substrate by an industrialized magnetron sputtering preparation method. The preparation process comprises the following steps:
firstly, a magnetron sputtering method is adopted on a Polycarbonate (PC) resin substrate, titanium nitride ceramics is taken as a target material, oxygen is taken as a reaction gas for carrying out reactive sputtering to plate TiNxOyThe thickness of the visible light absorption film is 20-120 nm, the thickness of the silicon nitride film is adjusted by controlling the sputtering time so as to realize the color adjustment of the film system, the sputtering power is 1kW, the intermediate frequency is 30kHz, the Ar gas flow is 50sccm, and the oxygen gas flow is 5 sccm;
secondly, in TiNxOyA layer of infrared high-reflection copper film is directly sputtered on the visible light absorption film by adopting a metal Cu target, the thickness is 120nm, the sputtering power is 1kW, and the Ar gas flow is 50 sccm;
and finally, directly sputtering and plating an upper silicon nitride protective film with the thickness of 200nm on the metal film 4 by adopting a silicon nitride ceramic target material through a magnetron sputtering method, wherein the sputtering power is 1kW, the medium frequency is 100kHz, and the Ar gas flow is 100 sccm.
The film system adopts engineering plastic Polycarbonate (PC) resin which has high strength and can be processed as a substrate, does not need toughening treatment, and further saves the cost because a lower silicon nitride film can be saved.
The film system adopts metal oxynitride as a visible light absorption film, the reflection spectrum of the film system is shown in figure 5, and the color coordinate in CIELAB color space is shown in table 4. Under various colors, the average emissivity in the visible light range is 5-30%, and the emissivity is less than 10%.
TABLE 4
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | |
L* | 28.1 | 36.5 | 44.9 | 46.3 | 46.5 | 46.7 | 43.4 | 39.6 | 37.1 | 50 | 39.7 | 32.4 | 42.8 |
a* | 14.9 | 0 | -8.4 | -9.3 | -8.8 | -10.0 | 0 | 10.1 | 15.7 | 16 | 17.5 | 12.9 | -15.7 |
b* | -23.7 | -8.3 | 19.8 | 0 | 16.4 | 10.0 | 21.5 | 10.1 | 0 | 31.7 | 18.8 | -12.9 | 7.4 |
Claims (6)
1. A low cost color tunable low emissivity window sill wall film system comprising: transparent substrate (1), lower floor's silicon nitride film (2), visible light absorption film (3), metal film (4) and upper strata silicon nitride protection film (5), its characterized in that: the membrane system structure is as follows: the transparent substrate (1) is sequentially provided with a lower silicon nitride film (2), a visible light absorption film (3), a metal film (4) and an upper silicon nitride protective film (5) from bottom to top, namely:
transparent substrate/lower silicon nitride film/visible light absorbing film/metal film/upper silicon nitride protective film, wherein:
said transparent substrate (1) being the body of the sill wall is transparent glass or plastic;
the thickness range of the lower silicon nitride film (2) which is used as the auxiliary color adjusting layer and the protective film of the film system during tempering is 0 nm-200 nm;
the visible light absorption film (3) as the main color adjusting layer is an oxide, a nitride or an oxynitride which can absorb visible light, and the thickness range of the visible light absorption film is 20 nm-200 nm;
the metal thin film (4) as the film system low-radiation functional layer is various metal films with high infrared reflection, and the thickness range of the metal thin film is 100 nm-200 nm;
the thickness range of the upper silicon nitride protective film (5) as the metal film protective layer is 0 nm-200 nm.
2. The low-cost color tunable low-emissivity window sill wall film system of claim 1, wherein: the transparent substrate (1) is transparent plastic or toughened glass which does not need to be toughened, and the lower silicon nitride film (2) is omitted.
3. The low-cost color tunable low-emissivity window sill wall film system of claim 1, wherein: the preferable film of the visible light absorption film (3) is a NiCrO film which is low in cost and easy to prepare.
4. The low-cost color tunable low-emissivity window sill wall film system of claim 1, wherein: the metal film (4) is aluminum metal with a surface automatically generating a compact passivation film, and the upper silicon nitride protective film (5) is omitted.
5. The low-cost color tunable low-emissivity window sill wall film system of claim 1, wherein: the desired appearance color of the sill wall on the side facing the outside is obtained by varying the thickness of said visible light absorbing film (3) and said underlying silicon nitride film (2).
6. A method of making the low cost color tunable low emissivity window sill wall film system of claim 1, wherein the method comprises:
firstly, plating the lower silicon nitride film (2) on a transparent substrate (1) by a magnetron sputtering method, and performing reactive sputtering plating by adopting a silicon target material and taking nitrogen as a reaction gas; or a silicon nitride ceramic target material is adopted to directly carry out sputtering plating;
secondly, plating a visible light absorption film (3) on the lower silicon nitride film (2), and performing reactive sputtering plating by adopting a metal or alloy target and taking oxygen, nitrogen or oxygen and nitrogen as reaction gases at the same time; or directly sputtering and plating by adopting oxide, nitride or oxynitride ceramic target materials;
thirdly, directly sputtering and plating a layer of infrared high-reflection metal film (4) on the visible light absorption film (3) by adopting a metal target;
finally, plating the upper silicon nitride protective film (5) on the metal film (4), and performing reactive sputtering plating by adopting a silicon target material and taking nitrogen as a reaction gas; or directly sputtering by adopting a silicon nitride ceramic target.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310148800.3A CN103243885B (en) | 2013-04-26 | 2013-04-26 | Low emissivity window still wall film system of a kind of low cost Color tunable and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310148800.3A CN103243885B (en) | 2013-04-26 | 2013-04-26 | Low emissivity window still wall film system of a kind of low cost Color tunable and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103243885A CN103243885A (en) | 2013-08-14 |
CN103243885B true CN103243885B (en) | 2015-07-29 |
Family
ID=48923733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310148800.3A Active CN103243885B (en) | 2013-04-26 | 2013-04-26 | Low emissivity window still wall film system of a kind of low cost Color tunable and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103243885B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108118298A (en) * | 2017-12-18 | 2018-06-05 | 池州市正彩电子科技有限公司 | A kind of color film forming method based on continuous magnetron sputtering |
CN110863752B (en) * | 2019-12-03 | 2020-12-01 | 温州益蓉机械有限公司 | Municipal building self-interacting window based on polymerization principle |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0870601A2 (en) * | 1996-04-10 | 1998-10-14 | Saint-Gobain Vitrage | Thermally insulating glazing with a low emissivity |
GB2354484A (en) * | 1999-08-09 | 2001-03-28 | Murata Manufacturing Co | Composite laminate comprising glass and ceramic |
CN101723602A (en) * | 2009-12-22 | 2010-06-09 | 浙江中力节能玻璃制造有限公司 | Low-emissivity coated glass with deep sapphire blue reflection color and production method thereof |
CN102806728A (en) * | 2012-09-05 | 2012-12-05 | 太仓耀华玻璃有限公司 | Neutral high-transmittance low-radiation coated glass |
-
2013
- 2013-04-26 CN CN201310148800.3A patent/CN103243885B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0870601A2 (en) * | 1996-04-10 | 1998-10-14 | Saint-Gobain Vitrage | Thermally insulating glazing with a low emissivity |
GB2354484A (en) * | 1999-08-09 | 2001-03-28 | Murata Manufacturing Co | Composite laminate comprising glass and ceramic |
CN101723602A (en) * | 2009-12-22 | 2010-06-09 | 浙江中力节能玻璃制造有限公司 | Low-emissivity coated glass with deep sapphire blue reflection color and production method thereof |
CN102806728A (en) * | 2012-09-05 | 2012-12-05 | 太仓耀华玻璃有限公司 | Neutral high-transmittance low-radiation coated glass |
Also Published As
Publication number | Publication date |
---|---|
CN103243885A (en) | 2013-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101497501B (en) | Three-silver low radiation film glass | |
CA3047603C (en) | Low-emissivity coating for a glass substrate | |
CN101148329B (en) | Low radiation coated glass with double-silver composite structure and technique | |
CN104354393B (en) | Radiation coated glass capable of being toughened | |
CN102372445A (en) | Single-silver and low-radiation glass and manufacturing method thereof | |
ATE446943T1 (en) | SILVER-FREE SUN PROTECTION COATING WITH LOW EMISSIVITY | |
CN103243885B (en) | Low emissivity window still wall film system of a kind of low cost Color tunable and preparation method thereof | |
CN107663029B (en) | European gray low-emissivity coated glass | |
CN102079629A (en) | High-transmittance coated glass coated with compound dielectric layer and compound antireflection layers and production technique thereof | |
CN104494237A (en) | High-transmission low-radiation double silver coated glass and manufacturing method thereof | |
CN103727693A (en) | Metal-medium multilayered structure color-adjustable sun photo-thermal absorbing coating | |
CN202344954U (en) | Four-silver-layer low-radiation film-coated glass | |
CN102514279A (en) | Four-silver coated glass with low radiation and manufacturing technique thereof | |
CN216005667U (en) | Low-emissivity coated glass with low reflectivity | |
CN206157057U (en) | Three golden silver medal low -emissivity coated glass in rose | |
CN204136515U (en) | Radiation coated glass capable of being toughened | |
CN204382744U (en) | A kind of double silver coating glass of high transmission Low emissivity | |
CN202219614U (en) | Low-radiation coated glass | |
CN212476547U (en) | Medium-transmittance low-reflection gray double-silver low-emissivity coated glass | |
CN102092959A (en) | High-sun-shading triple-silver coated glass with low emissivity and three composite antireflection layers and process | |
CN202380633U (en) | High-penetration double-silver low-radiation coated glass | |
CN103288361B (en) | A kind of low radiation coated glass | |
CN202293507U (en) | Bendable dark brown low-emissivity coated glass | |
CN106007404A (en) | Wear-resistant wet-resistant three-silver low-emissivity coated glass | |
CN216191931U (en) | Middle-reflection high-transparency crystal ash low-radiation coated glass |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |