CN103236785B - The potential switching device of many level out-put supply transducer - Google Patents
The potential switching device of many level out-put supply transducer Download PDFInfo
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- CN103236785B CN103236785B CN201310108217.XA CN201310108217A CN103236785B CN 103236785 B CN103236785 B CN 103236785B CN 201310108217 A CN201310108217 A CN 201310108217A CN 103236785 B CN103236785 B CN 103236785B
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- mos transistor
- resistance
- put supply
- bleeder circuit
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Abstract
A kind of potential switching device of many level out-put supply transducer, comprise a bleeder circuit, one resistance, one MOS transistor and break through arrester once, it is characterized in that: described bleeder circuit, obtain from the output of described many level out-put supply transducer and output output signal a relevant feedback signal, described bleeder circuit comprises a feedback end, and described feedback signal exports in described feedback end; Described resistance, connects with described MOS transistor; Described MOS transistor, and described resistant series is between described feedback end and earth terminal; Described undershoot overshoot arrester, is arranged in described potential switching device, becomes complete shut-down in order to adjust described MOS transistor or is become the speed of standard-sized sheet from complete shut-down from standard-sized sheet.The potential switching device of many level out-put supply transducer of the present invention has and improves the overshoot of described output signal or the advantage of undershoot condition.
Description
Technical field
The present invention relates to a kind of many level out-put supply transducer, specifically, is a kind of potential switching device of many level out-put supply transducer.
Background technology
Fig. 1 shows the known power supply changeover device 10 that can change output potential, it comprises control circuit 14 provides signal PWM driving power level 12 to produce output voltage Vout through inductance L to electric capacity Cout charging to produce inductive current IL, resistance R1 is connected between output 16 and feedback end 18, resistance R2 is connected between feedback end 18 and earth terminal GND, resistance R3 and switch MS is connected between feedback end 18 and earth terminal GND, and control circuit 14 produces signal PWM according to the feedback signal VFB on feedback end 18.Wherein, feedback signal VFB comprises the information of output voltage and electric current, and feedback signal VFB affects one of work period ratio, switching frequency, the parameter of operating time (on-time) and non-working time (off-time), when feedback signal VFB changes, output voltage and electric current will be made to change fast.
The oscillogram of signal when Fig. 2 display power supply transducer 10 occurs to rise instantaneous (uptransition), wherein waveform 20 is feedback signal VFB, and waveform 22 is output voltage Vout, and waveform 24 is inductive current IL.When output voltage Vout being transferred to high potential by electronegative potential, as time t1, opening (turnon) switch MS makes resistance R2 and R3 in parallel, and then make feedback signal VFB suddenly and decline rapidly, as shown in waveform 20, when feedback signal VFB is less than a default value, represent that power supply changeover device 10 needs to charge to electric capacity Cout immediately, that is, in order to reach best output response, power supply changeover device 10 will charge to electric capacity Cout with its maximum rate (slew-rate) of turning round, and rise, as shown in waveform 22 to make output voltage Vout.When feedback signal VFB reaches default value, as shown in time t2, energy stored in inductance L is greater than energy during stable state, as shown in waveform 24, the major part of these energy will be transferred into output 16, thus cause output voltage Vout overshoot (overshoot).
The oscillogram of signal when Fig. 3 display power supply transducer 10 occurs to decline instantaneous (downtransition), wherein waveform 30 is feedback signal VFB, and waveform 32 is output voltage Vout, and waveform 34 is inductive current IL.Contrary, when output voltage Vout being switched to electronegative potential by high potential, switch MS is switched to closedown (turnoff) state by open mode, now feedback signal VFB suddenly and rise rapidly, as shown at time t 3, therefore feedback signal VFB is greater than described default value, causes electric capacity Cout to start electric discharge, and then output voltage Vout and inductive current IL is declined.When feedback signal VFB drops to close to described default value again, as time t4, thus inductive current IL now lower than current potential during stable state, may cause output voltage Vout too low (undershoot).From Fig. 2 and Fig. 3, when the change that feedback signal VFB is rapid and unexpected, power supply changeover device 10 overreaction (over-react) will be made.
Existing many methods can alleviate the situation of undershoot and overshoot at present, modal method comprises reduction inductance L to reduce the energy be stored in inductance L, to increase electric capacity Cout to make the change of output voltage Vout slow and to increase the ripple change that low pass filter reduces feedback signal VFB, but these methods are all adjusted by chip exterior.
Therefore the known method adjusted in chip exterior also exists above-mentioned all inconvenience and problem.
Summary of the invention
Object of the present invention, is to propose a kind ofly to change the potential switching device that feedback signal switches many level out-put supply transducer of the output potential of described power supply changeover device.
Another object of the present invention, is to propose a kind of potential switching device that can improve many level out-put supply transducer of the situation of undershoot and overshoot.
For achieving the above object, technical solution of the present invention is:
A potential switching device for many level out-put supply transducer, comprises a bleeder circuit, a resistance, a MOS transistor and break through arrester once, it is characterized in that:
Described bleeder circuit, obtain from the output of described many level out-put supply transducer and output output signal a relevant feedback signal, described bleeder circuit comprises a feedback end, and described feedback signal exports in described feedback end;
Described resistance, connects with described MOS transistor;
Described MOS transistor, and described resistant series is between described feedback end and earth terminal;
Described undershoot overshoot arrester, is arranged in described potential switching device, becomes complete shut-down in order to adjust described MOS transistor or is become the speed of standard-sized sheet from complete shut-down from standard-sized sheet.
Potential switching device of the present invention can also be further achieved by the following technical measures.
Aforesaid potential switching device, wherein said bleeder circuit comprises:
One second resistance, is connected between described many level out-put supply converter output end and described feedback end:
One the 3rd resistance, is connected between described feedback end and an earth terminal.
Aforesaid potential switching device, wherein said undershoot overshoot arrester comprise that an electric capacity is connected to described MOS transistor between drain electrode and gate pole.
Aforesaid potential switching device, wherein said undershoot overshoot arrester also comprises:
One first impedance component, between the drain electrode being connected to described MOS transistor and gate pole;
One second impedance component, between the gate pole being connected to described MOS transistor and described earth terminal;
One the 3rd impedance component, between the drain electrode being connected to described MOS transistor and described earth terminal;
One current source, controls the switch of described MOS transistor.
Aforesaid potential switching device, wherein said first impedance component comprises an electric capacity.
Aforesaid potential switching device, wherein said current source is variable current source.
Aforesaid potential switching device, wherein said current source is constant current source.
A kind of many level out-put supply transducer, comprises a power stage, a bleeder circuit, a resistance, a MOS transistor, breaks through arrester and a control circuit once, it is characterized in that:
Described power stage, provides an output signal;
Described bleeder circuit, outputs signal generation one feedback signal described in dividing potential drop, described bleeder circuit comprises a feedback end, and described feedback signal exports in described feedback end;
Described resistance, connects with described MOS transistor;
Described MOS transistor, and described resistant series is between described feedback end and earth terminal;
Described undershoot overshoot arrester, becomes complete shut-down from standard-sized sheet in order to adjust described MOS transistor or is become the speed of standard-sized sheet from complete shut-down;
Described control circuit, produces a pulse-width modulation signal according to described feedback signal and drives described power stage.
Many level out-put supply transducer of the present invention can also be further achieved by the following technical measures.
Aforesaid many level out-put supply transducer, wherein said bleeder circuit comprises:
One second resistance, is connected between described many level out-put supply converter output end and described feedback end:
One the 3rd resistance, is connected between described feedback end and an earth terminal.
Aforesaid many level out-put supply transducer, wherein said undershoot overshoot arrester comprise that an electric capacity is connected to described MOS transistor between drain electrode and gate pole.
Aforesaid many level out-put supply transducer, wherein said undershoot overshoot arrester also comprises:
One first impedance component, between the drain electrode being connected to described MOS transistor and gate pole;
One second impedance component, between the gate pole being connected to described MOS transistor and described earth terminal;
One the 3rd impedance component, between the drain electrode being connected to described MOS transistor and described earth terminal;
One current source, controls the switch of described MOS transistor.
Aforesaid many level out-put supply transducer, wherein said first impedance component comprises an electric capacity.
Aforesaid many level out-put supply transducer, wherein said current source is variable current source.
Aforesaid many level out-put supply transducer, wherein said current source is constant current source.
Adopt after technique scheme, the potential switching device of many level out-put supply transducer of the present invention has and improves the overshoot of described output signal or the advantage of undershoot condition.
Accompanying drawing explanation
Fig. 1 is the known power supply changeover device schematic diagram that can change output potential;
Fig. 2 is the oscillogram of signal when power supply changeover device occurs to rise instantaneous in Fig. 1;
Fig. 3 is the oscillogram of signal when power supply changeover device occurs to decline instantaneous in Fig. 1;
Fig. 4 is first embodiment of the present invention schematic diagram;
Fig. 5 is second embodiment of the present invention schematic diagram;
Fig. 6 does not use the simulation drawing of many level out-put supply transducer of undershoot overshoot arrester of the present invention when rising instantaneous;
Fig. 7 is the simulation drawing of many level out-put supply transducer when rising instantaneous of undershoot overshoot arrester of the present invention;
Fig. 8 does not use the simulation drawing of many level out-put supply transducer of undershoot overshoot arrester of the present invention when declining instantaneous;
Fig. 9 is the simulation drawing of many level out-put supply transducer when declining instantaneous of undershoot overshoot arrester of the present invention.
Embodiment
Below in conjunction with embodiment and accompanying drawing thereof, the present invention is illustrated further.
Now refer to Fig. 4, Fig. 4 is first embodiment of the present invention schematic diagram.As shown in the figure, in described many level out-put supply transducer 40, control circuit 44 produces pulse-width modulation signal PWM driving power level 42 according to feedback signal VFB and produces output voltage Vout to produce inductive current IL to electric capacity Cout charging, and potential switching device 50 is in order to the output voltage current potential of switching power converter 40.In potential switching device 50, bleeder circuit 54 pressure-dividing output voltage Vout produces feedback signal VFB, described feedback signal VFB is exported by the feedback end 48 of bleeder circuit 54, resistance R3 and nmos pass transistor MS is connected between feedback end 48 and earth terminal GND, undershoot overshoot arrester 52 comprise that electric capacity C1 is connected to nmos pass transistor MS between drain electrode and gate pole, find out the position of minimum capacitance that electric capacity C1 will reach Miller (Miller) effect.Bleeder circuit 54 comprises resistance R1 and R2, and resistance R1 is connected between output 46 and feedback end 48, and resistance R2 is connected between feedback end 48 and earth terminal GND.Electric capacity C1 can be incorporated into chip internal and not affect other assembly.When the output voltage Vout of power supply changeover device 40 will switch to high potential by electronegative potential, there is provided a high pressure to the gate pole of nmos pass transistor MS with open NMOS transistor, but, due to the existence of electric capacity C1, so the voltage on nmos pass transistor MS gate pole cannot go up the current potential of described high pressure immediately, that is, nmos pass transistor MS can not become standard-sized sheet from complete shut-down at once, but become standard-sized sheet at leisure from complete shut-down, therefore the feedback signal VFB on feedback end 48 does not have suddenly and declines rapidly, and then improves the situation of overshoot.Same, when the output voltage Vout of power supply changeover device 40 will switch to electronegative potential by high potential, nmos pass transistor MS becomes complete shut-down at leisure from standard-sized sheet, and the feedback signal VFB therefore on feedback end 48 does not have suddenly and rises rapidly, and then improves the situation of undershoot.
Fig. 5 is second embodiment of the present invention schematic diagram, in described many level out-put supply transducer 60, control circuit 64 produces pulse-width modulation signal PWM driving power level 62 according to feedback signal VFB and produces output voltage Vout to produce inductive current IL to electric capacity Cout charging, and potential switching device 70 is in order to the output voltage current potential of switching power converter 60.In potential switching device 70, bleeder circuit 76 pressure-dividing output voltage Vout produces feedback signal VFB, described feedback signal VFB is exported by the feedback end 68 of bleeder circuit 76, resistance R3 and nmos pass transistor MS is connected between feedback end 68 and earth terminal GND, undershoot overshoot arrester 72 comprise that impedance component Z1 is connected to nmos pass transistor MS between drain electrode and gate pole, between the gate pole that impedance component Z2 is connected to nmos pass transistor MS and earth terminal GND, between the drain electrode that impedance component Z3 is connected to nmos pass transistor MS and earth terminal GND, and current source 74 controls the switch of nmos pass transistor MS.Bleeder circuit 76 comprises resistance R1 and R2, and resistance R1 is connected between output 66 and feedback end 68, and resistance R2 is connected between feedback end 68 and earth terminal GND.Wherein impedance component Z1, Z2 and Z3 can be the combination in any of resistance, electric capacity and inductance, and preferred impedance component Z1 is electric capacity, and current source 74 can be variable current source or constant current source.Impedance component Z1, Z2 and Z3 and current source 72 can be incorporated in chip and not affect other assembly.When the output voltage Vout of power supply changeover device 60 will switch to high potential by electronegative potential, current source 74 provides electric current I 1 to the gate pole of described nmos pass transistor MS with open NMOS transistor MS, due to impedance component Z1, Z2 and Z3, so nmos pass transistor MS can not become standard-sized sheet from complete shut-down at once, but become standard-sized sheet at leisure from complete shut-down, therefore the feedback signal VFB on feedback end 68 does not have suddenly and declines rapidly, and then improves the situation of overshoot.Same, when the output voltage Vout of power supply changeover device 60 will switch to electronegative potential by high potential, current source 74 draws electric current I 2 from the gate pole of nmos pass transistor MS, due to impedance component Z1, Z2 and Z3, nmos pass transistor MS becomes complete shut-down at leisure from standard-sized sheet, therefore the feedback signal VFB on feedback end 48 does not have suddenly and rises rapidly, and then improves the situation of undershoot.
Fig. 6 and Fig. 7 display does not use and uses the simulation drawing of many level out-put supply transducer of undershoot overshoot arrester of the present invention when rising instantaneous, wherein waveform 80 is output voltage Vout, waveform 82 is feedback signal VFB, waveform 84 is inductive current IL, waveform 86 is output voltage Vout, waveform 88 is feedback signal VFB, and waveform 90 is inductive current IL.Comparison diagram 6 and Fig. 7, when occurring to rise instantaneous, as shown in the time t5 of Fig. 6, do not use the feedback signal VFB of the power supply changeover device of undershoot overshoot arrester suddenly and decline rapidly, as shown in the waveform 82 of Fig. 6, therefore inductive current IL also rises rapidly, as shown in the waveform 84 of Fig. 6, this causes output voltage Vout to occur the situation of overshoot, as shown in the waveform 80 of Fig. 6.Use the power supply changeover device of undershoot overshoot arrester of the present invention when occurring to rise instantaneous, as the time t6 of Fig. 7, feedback signal VFB does not have suddenly and declines rapidly, as shown in the waveform 88 of Fig. 7, the mean value of feedback signal VFB presents and changes slowly, and therefore inductive current IL does not rise significantly, as shown in the waveform 90 of Fig. 7, so output voltage Vout does not have the situation of overshoot to occur, as shown in the waveform 86 of Fig. 7.
Fig. 8 and Fig. 9 display does not use and uses the simulation drawing of many level out-put supply transducer of undershoot overshoot arrester of the present invention when declining instantaneous, wherein waveform 92 is output voltage Vout, waveform 94 is feedback signal VFB, waveform 96 is inductive current IL, waveform 98 is output voltage Vout, waveform 100 is feedback signal VFB, and waveform 102 is inductive current IL.Comparison diagram 6 and Fig. 7, when occurring to decline instantaneous, as shown in the time t7 of Fig. 8, do not use the feedback signal VFB of the power supply changeover device of undershoot overshoot arrester suddenly and rise rapidly, as shown in the waveform 94 of Fig. 8, therefore inductive current IL also declines rapidly, as shown in the waveform 96 of Fig. 8, this causes output voltage Vout to occur the situation of undershoot, as shown in the waveform 92 of Fig. 8.Use the power supply changeover device of undershoot overshoot arrester of the present invention when occurring to decline instantaneous, feedback signal VFB does not have suddenly and declines rapidly, as shown in the waveform 100 of Fig. 9, feedback signal VFB presents and changes more slowly, therefore inductive current IL does not decline significantly, as shown in the waveform 102 of Fig. 9, so output voltage Vout does not have the situation of undershoot to occur, as shown in the waveform 98 of Fig. 9.
Above embodiment is used for illustrative purposes only, but not limitation of the present invention, person skilled in the relevant technique, without departing from the spirit and scope of the present invention, can also make various conversion or change.Therefore, all equivalent technical schemes also should belong to category of the present invention, should be limited by each claim.
Element numbers explanation
10 power supply changeover devices
12 power stages
14 control circuits
The output of 16 power supply changeover devices 10
18 feedback ends
The waveform of 20 feedback signal VFB
The waveform of 22 output voltage Vout
The waveform of 24 inductive current IL
The waveform of 30 feedback signal VFB
The waveform of 32 output voltage Vout
The waveform of 34 inductive current IL
40 power supply changeover devices
42 power stages
44 control circuits
The output of 46 power supply changeover devices 40
48 feedback ends
50 potential switching devices
52 undershoot overshoot arresters
54 bleeder circuits
60 power supply changeover devices
62 power stages
64 control circuits
The output of 66 power supply changeover devices 40
68 feedback ends
70 potential switching devices
72 undershoot overshoot arresters
74 current sources
76 bleeder circuits
The waveform of 80 output voltage Vout
The waveform of 82 feedback signal VFB
The waveform of 84 inductive current IL
The waveform of 86 output voltage Vout
The waveform of 88 feedback signal VFB
The waveform of 90 inductive current IL
The waveform of 92 output voltage Vout
The waveform of 94 feedback signal VFB
The waveform of 96 inductive current IL
The waveform of 98 output voltage Vout
The waveform of 100 feedback signal VFB
The waveform of 102 inductive current IL
Claims (4)
1. a potential switching device for the out-put supply of level more than transducer, comprises a bleeder circuit, a resistance, a MOS transistor and break through arrester once, it is characterized in that:
Described bleeder circuit, obtain from the output of described many level out-put supply transducer and output output signal a relevant feedback signal, described bleeder circuit comprises a feedback end, and described feedback signal exports in described feedback end;
Described resistance, connects with described MOS transistor;
Described MOS transistor, and described resistant series is between described feedback end and earth terminal;
Described undershoot overshoot arrester, is arranged in described potential switching device, becomes complete shut-down in order to adjust described MOS transistor or is become the speed of standard-sized sheet from complete shut-down from standard-sized sheet;
Wherein, described undershoot overshoot arrester comprise that an electric capacity is connected to described MOS transistor between drain electrode and gate pole.
2. potential switching device as claimed in claim 1, it is characterized in that, described bleeder circuit comprises:
One second resistance, is connected between described many level out-put supply converter output end and described feedback end:
One the 3rd resistance, is connected between described feedback end and an earth terminal.
3. the out-put supply of level a more than transducer, comprises a power stage, a bleeder circuit, a resistance, a MOS transistor, breaks through arrester and a control circuit once, it is characterized in that:
Described power stage, provides an output signal;
Described bleeder circuit, outputs signal generation one feedback signal described in dividing potential drop, described bleeder circuit comprises a feedback end, and described feedback signal exports in described feedback end;
Described resistance, connects with described MOS transistor;
Described MOS transistor, and described resistant series is between described feedback end and earth terminal;
Described undershoot overshoot arrester, becomes complete shut-down from standard-sized sheet in order to adjust described MOS transistor or is become the speed of standard-sized sheet from complete shut-down;
Described control circuit, produces a pulse-width modulation signal according to described feedback signal and drives described power stage;
Wherein, described undershoot overshoot arrester comprise that an electric capacity is connected to described MOS transistor between drain electrode and gate pole.
4. many level out-put supply transducer as claimed in claim 3, it is characterized in that, described bleeder circuit comprises:
One second resistance, is connected between described many level out-put supply converter output end and described feedback end:
One the 3rd resistance, is connected between described feedback end and an earth terminal.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810169686 CN101719724B (en) | 2008-10-09 | 2008-10-09 | Quasi-level-switching device of multi-quasi-level power supply converter |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810169686 Division CN101719724B (en) | 2008-10-09 | 2008-10-09 | Quasi-level-switching device of multi-quasi-level power supply converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103236785A CN103236785A (en) | 2013-08-07 |
| CN103236785B true CN103236785B (en) | 2016-01-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310108217.XA Expired - Fee Related CN103236785B (en) | 2008-10-09 | 2008-10-09 | The potential switching device of many level out-put supply transducer |
| CN 200810169686 Expired - Fee Related CN101719724B (en) | 2008-10-09 | 2008-10-09 | Quasi-level-switching device of multi-quasi-level power supply converter |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810169686 Expired - Fee Related CN101719724B (en) | 2008-10-09 | 2008-10-09 | Quasi-level-switching device of multi-quasi-level power supply converter |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751872B (en) * | 2011-04-21 | 2016-04-06 | 登丰微电子股份有限公司 | Feedback control circuit |
| KR101589475B1 (en) * | 2013-06-17 | 2016-01-28 | 삼성전기 주식회사 | Power supply device |
| TWI548194B (en) * | 2015-01-22 | 2016-09-01 | Richtek Technology Corp | A control circuit and a method for programming the output voltage of the power converter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1904790A (en) * | 2005-07-25 | 2007-01-31 | 鸿富锦精密工业（深圳）有限公司 | Output adjustable voltage stabilizing power circuit |
| CN100374965C (en) * | 2002-07-04 | 2008-03-12 | 株式会社理光 | Power source circuit |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6396326B1 (en) * | 2000-06-30 | 2002-05-28 | Intel Corporation | High voltage driver having overshoot/undershoot protection circuitry |
| JP4769108B2 (en) * | 2006-03-29 | 2011-09-07 | 川崎マイクロエレクトロニクス株式会社 | Output buffer circuit |
| KR20080032546A (en) * | 2006-10-10 | 2008-04-15 | 엘지이노텍 주식회사 | Inverter circuit for ccfl driving |
| US7502719B2 (en) * | 2007-01-25 | 2009-03-10 | Monolithic Power Systems, Inc. | Method and apparatus for overshoot and undershoot errors correction in analog low dropout regulators |
-
2008
- 2008-10-09 CN CN201310108217.XA patent/CN103236785B/en not_active Expired - Fee Related
- 2008-10-09 CN CN 200810169686 patent/CN101719724B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100374965C (en) * | 2002-07-04 | 2008-03-12 | 株式会社理光 | Power source circuit |
| CN1904790A (en) * | 2005-07-25 | 2007-01-31 | 鸿富锦精密工业（深圳）有限公司 | Output adjustable voltage stabilizing power circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103236785A (en) | 2013-08-07 |
| CN101719724B (en) | 2013-08-14 |
| CN101719724A (en) | 2010-06-02 |
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