CN103236785A - Potential switching device of multi-level output power inverter - Google Patents

Potential switching device of multi-level output power inverter Download PDF

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Publication number
CN103236785A
CN103236785A CN201310108217XA CN201310108217A CN103236785A CN 103236785 A CN103236785 A CN 103236785A CN 201310108217X A CN201310108217X A CN 201310108217XA CN 201310108217 A CN201310108217 A CN 201310108217A CN 103236785 A CN103236785 A CN 103236785A
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China
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resistance
mos transistor
switching device
bleeder circuit
feedback end
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CN201310108217XA
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CN103236785B (en
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张乔杰
王克丞
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Richtek Technology Corp
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Richtek Technology Corp
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Abstract

A potential switching device of a multi-level output power inverter comprises a bleeder circuit, a resistance, an MOS (metal oxide semiconductor) transistor and an undershoot and overshoot canceller. The potential switching device of the multi-level output power inverter is characterized in that the bleeder circuit acquires a feedback signal related to output signals of the output end from the output end of the multi-level output power inverter, the bleeder circuit comprises a feedback end, the feedback end outputs output signals, the resistance is connected with the MOS transistor in series, the MOS transistor is connected in series with the resistance between the feedback end and a ground terminal, and the undershoot and overshoot canceller is arranged in the potential switching device and is used for adjusting the speed of full-open to full-off or full-off to full-open of the MOS transistor. The potential switching device of the multi-level output power inverter has the advantages that the potential switching device can improve the overshoot condition or the undershoot condition of the output signals.

Description

The current potential switching device shifter of many level out-put supply transducer
Technical field
The present invention relates to a kind of many level out-put supply transducer, specifically, is a kind of current potential switching device shifter of many level out-put supply transducer.
Background technology
Fig. 1 shows the known power supply changeover device that can change output potential 10, it comprises that control circuit 14 provides signal PWM driving power level 12 capacitor C out to be charged through inductance L with generation inductive current IL and produces output voltage V out, resistance R 1 is connected between output 16 and the feedback end 18, resistance R 2 is connected between feedback end 18 and the earth terminal GND, resistance R 3 and switch MS are connected between feedback end 18 and the earth terminal GND, and control circuit 14 produces signal PWM according to the feedback signal VFB on the feedback end 18.Wherein, feedback signal VFB comprises the information of output voltage and electric current, and feedback signal VFB is for influencing one of parameter of work period ratio, switching frequency, operating time (on-time) and non-working time (off-time), when feedback signal VFB changes, will make output voltage and electric current change fast.
The oscillogram of signal when Fig. 2 display power supply transducer 10 takes place to rise instantaneous (up transition), wherein waveform 20 is feedback signal VFB, and waveform 22 is output voltage V out, and waveform 24 is inductive current IL.In the time will transferring output voltage V out to high potential by electronegative potential, as time t1, open (turn on) switch MS and make resistance R 2 and R3 parallel connection, and then make feedback signal VFB and descend suddenly and rapidly, shown in waveform 20, as feedback signal VFB during less than a default value, expression power supply changeover device 10 needs immediately capacitor C out to be charged, that is to say, in order to reach best output response, power supply changeover device 10 will be turned round rate (slew-rate) to capacitor C out charging with its maximum, so that output voltage V out rising, shown in waveform 22.When feedback signal VFB reaches default value, shown in time t2, the energy when stored energy is greater than stable state on the inductance L is shown in waveform 24, the major part of these energy will be transferred into output 16, thereby cause output voltage V out overshoot (overshoot).
The oscillogram of signal when Fig. 3 display power supply transducer 10 takes place to descend instantaneous (down transition), wherein waveform 30 is feedback signal VFB, and waveform 32 is output voltage V out, and waveform 34 is inductive current IL.Opposite, in the time will switching to electronegative potential to output voltage V out by high potential, switch MS is switched to (turn off) state of closing by open mode, this moment, feedback signal VFB rose suddenly and rapidly, shown in time t3, so feedback signal VFB greater than described default value, causes capacitor C out to begin discharge, and then output voltage V out and inductive current IL are descended.When feedback signal VFB drops near described default value again, as time t4, the current potential when the inductive current IL of this moment may be lower than stable state, thereby cause output voltage V out low excessively (undershoot).By Fig. 2 and Fig. 3 as can be known, when the rapid and unexpected change of feedback signal VFB, will make power supply changeover device 10 overreactions (over-react).
At present existing many methods can alleviate dashes the situation that reaches overshoot down, modal method comprises that reducing inductance L is stored in energy on the inductance L, increases capacitor C out so that the change speed of output voltage V out is slack-off and increase the ripple that low pass filter reduces feedback signal VFB changes with minimizing, yet these methods all are to be adjusted by chip exterior.
Therefore the known method that adjusts in chip exterior exists above-mentioned all inconvenience and problem.
Summary of the invention
Purpose of the present invention is to propose a kind of current potential switching device shifter of many level out-put supply transducer that feedback signal is switched the output potential of described power supply changeover device that changes.
Another object of the present invention is to propose a kind of energy and improves the current potential switching device shifter that dashes many level out-put supply transducer of the situation that reaches overshoot down.
For achieving the above object, technical solution of the present invention is:
A kind of current potential switching device shifter of many level out-put supply transducer comprises a bleeder circuit, a resistance, and a MOS transistor and once breaking through towards arrester is characterized in that:
Described bleeder circuit is obtained a feedback signal relevant with output signal on the output from the output of described many level out-put supply transducer, and described bleeder circuit comprises a feedback end, and described feedback signal is exported in described feedback end;
Described resistance is connected with described MOS transistor;
Described MOS transistor, and described resistance string is associated between described feedback end and the earth terminal;
Break through towards arrester under described, be arranged in the described current potential switching device shifter, in order to adjust the speed that described MOS transistor becomes complete shut-down by standard-sized sheet or become standard-sized sheet by complete shut-down.
Current potential switching device shifter of the present invention can also be further achieved by the following technical measures.
Aforesaid current potential switching device shifter, wherein said bleeder circuit comprises:
One second resistance is connected between described many level out-put supply converter output end and the described feedback end:
One the 3rd resistance is connected between described feedback end and the earth terminal.
Aforesaid current potential switching device shifter, wherein said breaking through towards arrester down comprises that an electric capacity is connected between the drain electrode and gate pole of described MOS transistor.
Aforesaid current potential switching device shifter, break through towards arrester under wherein said and also comprise:
One first impedance component is connected between the drain electrode and gate pole of described MOS transistor;
One second impedance component is connected between the gate pole and described earth terminal of described MOS transistor;
One the 3rd impedance component is connected between the drain electrode and described earth terminal of described MOS transistor;
One current source is controlled the switch of described MOS transistor.
Aforesaid current potential switching device shifter, wherein said first impedance component comprises an electric capacity.
Aforesaid current potential switching device shifter, wherein said current source are variable current source.
Aforesaid current potential switching device shifter, wherein said current source are constant current source.
A kind of many level out-put supply transducer comprises a power stage, a bleeder circuit, and a resistance, a MOS transistor is once broken through towards arrester and a control circuit, it is characterized in that:
Described power stage provides an output signal;
Described bleeder circuit, the described output signal of dividing potential drop produces a feedback signal, and described bleeder circuit comprises a feedback end, and described feedback signal is exported in described feedback end;
Described resistance is connected with described MOS transistor;
Described MOS transistor, and described resistance string is associated between described feedback end and the earth terminal;
Break through towards arrester under described, in order to adjust the speed that described MOS transistor becomes complete shut-down by standard-sized sheet or become standard-sized sheet by complete shut-down;
Described control circuit produces a pulse-width modulation signal according to described feedback signal and drives described power stage.
Many level out-put supply transducer of the present invention can also be further achieved by the following technical measures.
Aforesaid many level out-put supply transducer, wherein said bleeder circuit comprises:
One second resistance is connected between described many level out-put supply converter output end and the described feedback end:
One the 3rd resistance is connected between described feedback end and the earth terminal.
Aforesaid many level out-put supply transducer, wherein said breaking through towards arrester down comprises that an electric capacity is connected between the drain electrode and gate pole of described MOS transistor.
Aforesaid many level out-put supply transducer, break through towards arrester under wherein said and also comprise:
One first impedance component is connected between the drain electrode and gate pole of described MOS transistor;
One second impedance component is connected between the gate pole and described earth terminal of described MOS transistor;
One the 3rd impedance component is connected between the drain electrode and described earth terminal of described MOS transistor;
One current source is controlled the switch of described MOS transistor.
Aforesaid many level out-put supply transducer, wherein said first impedance component comprises an electric capacity.
Aforesaid many level out-put supply transducer, wherein said current source is variable current source.
Aforesaid many level out-put supply transducer, wherein said current source is constant current source.
After adopting technique scheme, the current potential switching device shifter of many level out-put supply transducer of the present invention has overshoot or the following advantage towards situation of improving described output signal.
Description of drawings
Fig. 1 is the known power supply changeover device schematic diagram that can change output potential;
Fig. 2 is the oscillogram of signal when power supply changeover device generation rising is instantaneous among Fig. 1;
Fig. 3 is the oscillogram of signal when power supply changeover device generation decline is instantaneous among Fig. 1;
Fig. 4 is first embodiment of the present invention schematic diagram;
Fig. 5 is second embodiment of the present invention schematic diagram;
Fig. 6 is not for using the simulation drawing of many level out-put supply transducer when rising is instantaneous of breaking through down towards arrester of the present invention;
Fig. 7 is the simulation drawing of many level out-put supply transducer when rising is instantaneous of breaking through down towards arrester of the present invention;
Fig. 8 is not for using the simulation drawing of many level out-put supply transducer when decline is instantaneous of breaking through down towards arrester of the present invention;
Fig. 9 is the simulation drawing of many level out-put supply transducer when decline is instantaneous of breaking through down towards arrester of the present invention.
Embodiment
Below in conjunction with embodiment and accompanying drawing thereof the present invention is illustrated further.
Now see also Fig. 4, Fig. 4 is first embodiment of the present invention schematic diagram.As shown in the figure, in described many level out-put supply transducer 40, control circuit 44 produces pulse-width modulation signal PWM driving power level 42 according to feedback signal VFB and produces output voltage V out to produce the capacitor C out charging of inductive current IL, and current potential switching device shifter 50 is in order to the output voltage current potential of switching power converter 40.In current potential switching device shifter 50, bleeder circuit 54 pressure-dividing output voltage Vout produce feedback signal VFB, described feedback signal VFB is by feedback end 48 outputs of bleeder circuit 54, resistance R 3 and nmos pass transistor MS are connected between feedback end 48 and the earth terminal GND, break through down towards arrester 52 and comprise that capacitor C 1 is connected between the drain electrode and gate pole of nmos pass transistor MS, finds out the position of minimum capacitance that capacitor C 1 will be reached Miller (Miller) effect.Bleeder circuit 54 comprises resistance R 1 and R2, and resistance R 1 is connected between output 46 and the feedback end 48, and resistance R 2 is connected between feedback end 48 and the earth terminal GND.Capacitor C 1 can be incorporated into chip internal and not influence other assembly.When the output voltage V out of power supply changeover device 40 will switch to high potential by electronegative potential, provide a high pressure to the gate pole of nmos pass transistor MS with the open NMOS transistor, yet, because the existence of capacitor C 1, so the voltage on the nmos pass transistor MS gate pole can't be gone up the current potential of described high pressure immediately, that is to say, nmos pass transistor MS can not become standard-sized sheet by complete shut-down at once, but become standard-sized sheet at leisure by complete shut-down, therefore the feedback signal VFB on the feedback end 48 does not descend suddenly and rapidly, and then improves the situation of overshoot.Same, when the output voltage V out of power supply changeover device 40 will switch to electronegative potential by high potential, nmos pass transistor MS becomes complete shut-down at leisure by standard-sized sheet, so the feedback signal VFB on the feedback end 48 does not have suddenly and rising rapidly, and then improves the situation of dashing down.
Fig. 5 is second embodiment of the present invention schematic diagram, in described many level out-put supply transducer 60, control circuit 64 produces pulse-width modulation signal PWM driving power level 62 according to feedback signal VFB and produces output voltage V out to produce the capacitor C out charging of inductive current IL, and current potential switching device shifter 70 is in order to the output voltage current potential of switching power converter 60.In current potential switching device shifter 70, bleeder circuit 76 pressure-dividing output voltage Vout produce feedback signal VFB, described feedback signal VFB is by feedback end 68 outputs of bleeder circuit 76, resistance R 3 and nmos pass transistor MS are connected between feedback end 68 and the earth terminal GND, break through down towards arrester 72 and comprise that impedance component Z1 is connected between the drain electrode and gate pole of nmos pass transistor MS, impedance component Z2 is connected between the gate pole and earth terminal GND of nmos pass transistor MS, impedance component Z3 is connected between the drain electrode and earth terminal GND of nmos pass transistor MS, and the switch of current source 74 control nmos pass transistor MS.Bleeder circuit 76 comprises resistance R 1 and R2, and resistance R 1 is connected between output 66 and the feedback end 68, and resistance R 2 is connected between feedback end 68 and the earth terminal GND.Wherein impedance component Z1, Z2 and Z3 can be the combination in any of resistance, electric capacity and inductance, and preferred impedance component Z1 is electric capacity, and current source 74 can be variable current source or constant current source.Impedance component Z1, Z2 and Z3 and current source 72 can be incorporated in the chip and not influence other assembly.When the output voltage V out of power supply changeover device 60 will switch to high potential by electronegative potential, current source 74 provide electric current I 1 to the gate pole of described nmos pass transistor MS with open NMOS transistor MS, because impedance component Z1, Z2 and Z3, so nmos pass transistor MS can not become standard-sized sheet by complete shut-down at once, but become standard-sized sheet at leisure by complete shut-down, therefore the feedback signal VFB on the feedback end 68 does not descend suddenly and rapidly, and then improves the situation of overshoot.Same, when the output voltage V out of power supply changeover device 60 will switch to electronegative potential by high potential, current source 74 draws electric current I 2 from the gate pole of nmos pass transistor MS, because impedance component Z1, Z2 and Z3, nmos pass transistor MS becomes complete shut-down at leisure by standard-sized sheet, therefore the feedback signal VFB on the feedback end 48 does not rise suddenly and rapidly, and then improves the situation of dashing down.
The simulation drawing of many level out-put supply transducer when rising is instantaneous of breaking through under the present invention towards arrester do not used and uses in Fig. 6 and Fig. 7 demonstration, wherein waveform 80 is output voltage V out, waveform 82 is feedback signal VFB, waveform 84 is inductive current IL, waveform 86 is output voltage V out, waveform 88 is feedback signal VFB, and waveform 90 is inductive current IL.Comparison diagram 6 and Fig. 7, when the generation rising is instantaneous, shown in the time t5 of Fig. 6, there is not to use the feedback signal VFB that breaks through down towards the power supply changeover device of arrester to descend suddenly and rapidly, shown in the waveform 82 of Fig. 6, so also rising rapidly of inductive current IL, shown in the waveform 84 of Fig. 6, this causes output voltage V out the situation of overshoot to occur, shown in the waveform 80 of Fig. 6.Use of the present invention breaking through down towards the power supply changeover device of arrester taking place to rise when instantaneous, time t6 as Fig. 7, feedback signal VFB does not descend suddenly and rapidly, shown in the waveform 88 of Fig. 7, the mean value of feedback signal VFB presents variation slowly, so rising significantly of inductive current IL, shown in the waveform 90 of Fig. 7, so output voltage V out does not have the situation of overshoot to occur, shown in the waveform 86 of Fig. 7.
The simulation drawing of many level out-put supply transducer when decline is instantaneous of breaking through down towards arrester of the present invention do not used and uses in Fig. 8 and Fig. 9 demonstration, wherein waveform 92 is output voltage V out, waveform 94 is feedback signal VFB, waveform 96 is inductive current IL, waveform 98 is output voltage V out, waveform 100 is feedback signal VFB, and waveform 102 is inductive current IL.Comparison diagram 6 and Fig. 7, when generation decline is instantaneous, shown in the time t7 of Fig. 8, there is not to use the feedback signal VFB that breaks through down towards the power supply changeover device of arrester to rise suddenly and rapidly, shown in the waveform 94 of Fig. 8, so also decline rapidly of inductive current IL, shown in the waveform 96 of Fig. 8, this causes output voltage V out the situation of dashing down to occur, shown in the waveform 92 of Fig. 8.Use of the present invention breaking through down towards the power supply changeover device of arrester taking place to descend when instantaneous, feedback signal VFB does not descend suddenly and rapidly, shown in the waveform 100 of Fig. 9, feedback signal VFB presents variation more slowly, therefore inductive current IL does not descend significantly, shown in the waveform 102 of Fig. 9, thus the situation that output voltage V out does not dash down appearance, shown in the waveform 98 of Fig. 9.
Above embodiment is only for the usefulness that the present invention is described, but not limitation of the present invention, person skilled in the relevant technique under the situation that does not break away from the spirit and scope of the present invention, can also be made various conversion or variation.Therefore, all technical schemes that are equal to also should belong to category of the present invention, should be limited by each claim.
The element numbers explanation
10 power supply changeover devices
12 power stages
14 control circuits
The output of 16 power supply changeover devices 10
18 feedback ends
The waveform of 20 feedback signal VFB
The waveform of 22 output voltage V out
The waveform of 24 inductive current IL
The waveform of 30 feedback signal VFB
The waveform of 32 output voltage V out
The waveform of 34 inductive current IL
40 power supply changeover devices
42 power stages
44 control circuits
The output of 46 power supply changeover devices 40
48 feedback ends
50 current potential switching device shifters
Break through towards arrester for 52 times
54 bleeder circuits
60 power supply changeover devices
62 power stages
64 control circuits
The output of 66 power supply changeover devices 40
68 feedback ends
70 current potential switching device shifters
Break through towards arrester for 72 times
74 current sources
76 bleeder circuits
The waveform of 80 output voltage V out
The waveform of 82 feedback signal VFB
The waveform of 84 inductive current IL
The waveform of 86 output voltage V out
The waveform of 88 feedback signal VFB
The waveform of 90 inductive current IL
The waveform of 92 output voltage V out
The waveform of 94 feedback signal VFB
The waveform of 96 inductive current IL
The waveform of 98 output voltage V out
The waveform of 100 feedback signal VFB
The waveform of 102 inductive current IL

Claims (6)

1. the current potential switching device shifter of the transducer of level out-put supply more than a kind comprises a bleeder circuit, a resistance, and a MOS transistor and once breaking through towards arrester is characterized in that:
Described bleeder circuit is obtained a feedback signal relevant with output signal on the output from the output of described many level out-put supply transducer, and described bleeder circuit comprises a feedback end, and described feedback signal is exported in described feedback end;
Described resistance is connected with described MOS transistor;
Described MOS transistor, and described resistance string is associated between described feedback end and the earth terminal;
Break through towards arrester under described, be arranged in the described current potential switching device shifter, in order to adjust the speed that described MOS transistor becomes complete shut-down by standard-sized sheet or become standard-sized sheet by complete shut-down.
2. current potential switching device shifter as claimed in claim 1 is characterized in that, described bleeder circuit comprises:
One second resistance is connected between described many level out-put supply converter output end and the described feedback end:
One the 3rd resistance is connected between described feedback end and the earth terminal.
3. current potential switching device shifter as claimed in claim 1 is characterized in that, described breaking through towards arrester down comprises that an electric capacity is connected between the drain electrode and gate pole of described MOS transistor.
4. the transducer of level out-put supply more than a kind comprises a power stage, a bleeder circuit, and a resistance, a MOS transistor is once broken through towards arrester and a control circuit, it is characterized in that:
Described power stage provides an output signal;
Described bleeder circuit, the described output signal of dividing potential drop produces a feedback signal, and described bleeder circuit comprises a feedback end, and described feedback signal is exported in described feedback end;
Described resistance is connected with described MOS transistor;
Described MOS transistor, and described resistance string is associated between described feedback end and the earth terminal;
Break through towards arrester under described, in order to adjust the speed that described MOS transistor becomes complete shut-down by standard-sized sheet or become standard-sized sheet by complete shut-down;
Described control circuit produces a pulse-width modulation signal according to described feedback signal and drives described power stage.
5. many level out-put supply transducer as claimed in claim 4 is characterized in that described bleeder circuit comprises:
One second resistance is connected between described many level out-put supply converter output end and the described feedback end:
One the 3rd resistance is connected between described feedback end and the earth terminal.
6. many level out-put supply transducer as claimed in claim 4 is characterized in that, described breaking through towards arrester down comprises that an electric capacity is connected between the drain electrode and gate pole of described MOS transistor.
CN201310108217.XA 2008-10-09 2008-10-09 The potential switching device of many level out-put supply transducer Expired - Fee Related CN103236785B (en)

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CN 200810169686 CN101719724B (en) 2008-10-09 2008-10-09 Quasi-level-switching device of multi-quasi-level power supply converter

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CN103236785B CN103236785B (en) 2016-01-20

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CN 200810169686 Expired - Fee Related CN101719724B (en) 2008-10-09 2008-10-09 Quasi-level-switching device of multi-quasi-level power supply converter

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CN102751872B (en) * 2011-04-21 2016-04-06 登丰微电子股份有限公司 Feedback control circuit
KR101589475B1 (en) * 2013-06-17 2016-01-28 삼성전기 주식회사 Power supply device
TWI548194B (en) * 2015-01-22 2016-09-01 Richtek Technology Corp A control circuit and a method for programming the output voltage of the power converter

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CN103236785B (en) 2016-01-20
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