CN103234913B - Measuring apparatus for pollutants on extreme ultra-violet lithography light source collection mirror - Google Patents
Measuring apparatus for pollutants on extreme ultra-violet lithography light source collection mirror Download PDFInfo
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- CN103234913B CN103234913B CN201310116086.XA CN201310116086A CN103234913B CN 103234913 B CN103234913 B CN 103234913B CN 201310116086 A CN201310116086 A CN 201310116086A CN 103234913 B CN103234913 B CN 103234913B
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Abstract
The invention provides a measuring apparatus for pollutants on an extreme ultra-violet lithography light source collection mirror. The apparatus comprises an alignment laser light source, a linear polarizer, a depolarization splitter, a sample unit, a quarter-wave plate, a synchro phase shifter, a signal processing system and an extreme ultra-violet light source collector. The measuring apparatus provided by the invention can effectively measure the pollutants on the collection mirror in real time.
Description
Technical field
The present invention relates to extreme Ultraviolet Lithography Source, particularly a kind of extreme Ultraviolet Lithography Source collects mirror radioactive content device.
Background technology
Along with the development of semi-conductor industry, particularly require more and more higher to chip feature sizes, existing 193nm immersion lithography can not meet 10nm node demand, and extreme ultraviolet photolithographic (EUVL) just becomes the emphasis of research.Extreme ultraviolet photolithographic need with wavelength be the spectrum of about 13.5nm as light source, because wavelength is far smaller than previous generation litho machine, become photoetching technique development an important directions.EUV light source is generally by focusing high power laser beam to borne tin droplets produces, then collection mirror is adopted to collect the extreme ultraviolet produced, in the process of collector ultraviolet light, the adhesion of some pollutants can be there is and affect its reflectivity properties on the mirror (such as, tin after being broken up by high power laser light and the compound of tin), thus reduce the performance of whole extreme ultraviolet etching system, must clear up pollutant in time, guarantee EUV light source normally works.In order to control pollution in time and process, first need to measure pollutant.
Measurement collection mirror pollution method conventional at present first takes out sample from collection mirror, then carries out dependence test to this sample, therefrom obtain the situation of collecting mirror pollutant.Obviously, this method is difficult to realize real-time measurement, causes correspondingly to make corresponding process to pollution condition.
Summary of the invention
In order to overcome above-mentioned the deficiencies in the prior art, proposing a kind of extreme Ultraviolet Lithography Source and collecting mirror measuring contamination device, this device can pollutant in real time, effectively on measurement collection mirror.
Technical solution of the present invention is as follows:
A kind of extreme Ultraviolet Lithography Source collects mirror measuring contamination device, its feature is, this device comprises collimation laser light source, the line polarizer, depolarization optical splitter, sample device, quarter-wave plate, synchro phase shifter, signal processing system and EUV light source collector, its position relationship is: the collimated light beam of described collimation laser light source outgoing is successively after the described line polarizer and described polarization beam apparatus, reverberation is reflected to form respectively at the front surface of described sample device and rear surface, this reverberation is reflected by the light splitting surface of described depolarization optical splitter again, then described quarter-wave plate and described synchro phase shifter is passed through successively, finally receive by described signal processing system, described sample device can be embedded on described EUV light source collector or be placed on the edge of described EUV light source collector, the fast axle of described quarter-wave plate also with the axle that thoroughly the shakes angle at 45 ° of the described line polarizer.
The described line polarizer is polarizer, devating prism or polarization phase mask.
Described depolarization optical splitter is the flat board or the Amici prism that are coated with depolarization spectro-film.
Described sample device is made up of birefringent film layer, substrate and layer of contaminants, the phase-delay quantity of described birefringent film layer is 90 °, the axle that thoroughly the shakes angle at 45 ° of its fast axle and the described line polarizer, described substrate is made with the material that refractive index is about 1.7, and described layer of contaminants mainly comprises the oxide of tin and tin.
Described quarter-wave plate is crystalline material type quarter-wave plate, multi-component compound quarter-wave plate, reflection rib build quarter-wave plate or birefringent film type quarter-wave plate.
Described synchro phase shifter can produce the superimposed figure in several positions successively with certain phasic difference simultaneously.
Described signal processing system forms by IMAQ CCD with the computer of position superimposed figure treatment and analyses software.
Compared with first technology, technique effect of the present invention is as follows:
Real-time measurement layer of contaminants.The sample device that this extreme Ultraviolet Lithography Source collects mirror measuring contamination device is embedded on collection mirror or is placed on its edge, one is formed with collection mirror, and adopt synchro phase shifter to obtain several superimposed figure simultaneously, these superimposed figure are carried out high speed processing by signal processing system again simultaneously, therefore can realize the thickness measuring layer of contaminants in real time.
Accompanying drawing explanation
Fig. 1 is the structural representation that extreme Ultraviolet Lithography Source collects mirror measuring contamination device
Fig. 2 is the structural representation of sample device
Fig. 3 is the structural representation of clean sample device
Detailed description of the invention
Below in conjunction with accompanying drawing and embodiment, the invention will be further described, but should not limit the scope of the invention with this.
First refer to Fig. 1, Fig. 1 is the structural representation that extreme Ultraviolet Lithography Source collects mirror measuring contamination device.As seen from the figure, extreme Ultraviolet Lithography Source of the present invention collects mirror measuring contamination device, comprise collimation laser light source 1, the line polarizer 2, depolarization optical splitter 3, sample device 4, quarter-wave plate 5, synchro phase shifter 6, signal processing system 7 and EUV light source collector 8, its position relationship is: described sample device 4 is by birefringent film layer 41, substrate 42 forms, the phase-delay quantity of described birefringent film layer is 90 °, the fast axle of birefringent film layer 41 and the axle that thoroughly the shakes angle at 45 ° of the described line polarizer 2, described sample device 4 is embedded in (figure as left in Fig. 1) on described EUV light source collector 8 or the edge (figure as right in Fig. 1) of EUV light source collector 8 as described in being placed in, the collimated light beam of described collimation laser light source 1 outgoing is successively after the described line polarizer 2 and described polarization beam apparatus 3, reverberation is reflected to form respectively at the front surface of described sample device 4 and rear surface, this reverberation is passed through described quarter-wave plate 5 and described synchro phase shifter 6 successively by after the reflection of the light splitting surface of described depolarization optical splitter 3, finally receive by described signal processing system 7, the fast axle of described quarter-wave plate 5 and the axle that thoroughly the shakes angle at 45 ° of the described line polarizer 2.
The described line polarizer 2 is polarizer, devating prism or polarization phase mask.
Described depolarization optical splitter 3 is for being coated with flat board or the Amici prism of depolarization spectro-film.
Described sample device 4 is made up of birefringent film layer 41, substrate 42 and layer of contaminants 43, as shown in Figure 2, the phase-delay quantity of birefringent film layer 41 is 90 °, the axle that thoroughly the shakes angle at 45 ° of its fast axle and the line polarizer 2, substrate 42 is made with the material that refractive index is about 1.7, and layer of contaminants 43 mainly comprises the oxide of tin and tin.
Quarter-wave plate 5 is crystalline material type quarter-wave plate, multi-component compound quarter-wave plate, reflection rib build quarter-wave plate or birefringent film type quarter-wave plate, the axle that thoroughly the shakes angle at 45 ° of its fast axle and the line polarizer 2.
Synchro phase shifter 6 can produce the superimposed figure in several positions successively with certain phasic difference simultaneously.
Signal processing system 7 forms by image acquisition device CCD with the computer of position superimposed figure treatment and analyses software.
A branch of directional light (wavelength is 632.8nm) becomes linearly polarized light after the line polarizer 2, partial line polarised light forms reverberation through optical splitter 3 in the front surface reflection of birefringent film layer 41, because the phase-delay quantity of birefringent film layer 41 is 90 °, and the axle that thoroughly the shakes angle at 45 ° of its fast axle and the line polarizer 2, therefore another part through linearly polarized light after birefringent film layer 41, form circularly polarized light, this circularly polarized light, again through after substrate 42, the rear surface of layer of contaminants 43 reflects to form another bundle reverberation.This reverberation becomes linearly polarized light through layer of contaminants 43, substrate 42 and birefringent film layer 41 more successively, because twice through birefringent film layer 41, therefore the polarization direction of this linearly polarized light relatively from the polarization direction of the linearly polarized light of the line polarizer 2 outgoing by half-twist, namely two bundle reverberation are the orthogonal linearly polarized light in polarization direction.This two bundles reverberation becomes two contrary bundle circularly polarized lights of rotation direction by quarter-wave plate 5 after reflection again on the light splitting surface of depolarization optical splitter 3, this two bundles circularly polarized light enters synchro phase shifter 6 again and carries out Phase Stacking, and several superimposed figure now successively with certain phasic difference can be obtained simultaneously.The superimposed figure in position is gathered by signal processing system 7 and carries out high speed processing, thus the thickness information obtaining measured object is (see Matt Novak, James Millerd, the .Analysis of a micropolarizer array-based simultaneous phase-shiftinginterferometer.Applied Optics such as Neal Brock, Vol.44 (32), 6861-6868,2004).
When measuring, we are first to the pollution-free nitride layer 43 of clean sample device 4(, measure as shown in Figure 3), obtain its thickness and it can be used as calibration value, and then measure contaminated sample device 4(and have layer of contaminants 43) thickness, this thickness is deducted the one-tenth-value thickness 1/10 that calibration value just can obtain layer of contaminants 43.
In whole measurement mechanism, also have some other unwanted reverberation can enter into synchro phase shifter 6, below the impact of our labor once these reverberation.Birefringent film layer 41 can utilize oblique deposition technique (see .Optical properties and microstructure of Ta such as Xiao Xiudi, Dong Guoping, He Hongbo
2o
5thin films prepared by oblique angle deposition.Chinese Optics Letters, Vol.7 (96), 967-970,2009) to TiO
2tiltedly deposit acquisition, the refractive index of its P light and S light when 632.8nm is respectively 1.56 and 1.594, and the refractive index of substrate 42 is 1.7, therefore reflectivity on birefringent film layer 41 and substrate 42 interface is very little.The main composition of layer of contaminants 43 is SnO
2, its refractive index is about 1.9, then the reflectivity on the interface of substrate 42 and layer of contaminants 43 is also very little.Namely the reverberation that the reverberation obtained from these two interfaces obtains much smaller than the front surface of birefringent film layer 41 and the rear surface of layer of contaminants 43, very little on the formation impact of the superimposed figure in position, back, therefore can ignore.
This extreme Ultraviolet Lithography Source is collected mirror measuring contamination device and the flat board (clean sample device 4) being coated with birefringent film layer is formed one with collection mirror 8, then using sample device 4 as measured object, also utilize synchro phase shifter to obtain the superimposed figure in several positions successively with certain phasic difference in the measurements simultaneously, achieve the pollution on real-time measurement collection mirror.
Claims (6)
1. an extreme Ultraviolet Lithography Source collects mirror measuring contamination device, its feature is, this device comprises collimation laser light source (1), the line polarizer (2), depolarization optical splitter (3), sample device (4), quarter-wave plate (5), synchro phase shifter (6), signal processing system (7) and EUV light source collector (8), its position relationship is: described sample device (4) is by birefringent film layer (41), substrate (42) forms, the phase-delay quantity of described birefringent film layer is 90 °, the fast axle of birefringent film layer (41) and the axle that thoroughly the shakes angle at 45 ° of the described line polarizer (2), described sample device (4) is embedded on described EUV light source collector (8) or is placed in the edge of described EUV light source collector (8), the collimated light beam of described collimation laser light source (1) outgoing is successively after the described line polarizer (2) and described depolarization optical splitter (3), reverberation is reflected to form respectively at the front surface of described sample device (4) and rear surface, this reverberation is passed through described quarter-wave plate (5) and described synchro phase shifter (6) successively by after the reflection of the light splitting surface of described depolarization optical splitter (3), finally receive by described signal processing system (7), the fast axle of described quarter-wave plate (5) and the axle that thoroughly the shakes angle at 45 ° of the described line polarizer (2).
2. extreme Ultraviolet Lithography Source according to claim 1 collects mirror measuring contamination device, it is characterized in that the described line polarizer (2) is polarizer, devating prism or polarization phase mask.
3. extreme Ultraviolet Lithography Source according to claim 1 collects mirror measuring contamination device, it is characterized in that described depolarization optical splitter (3) is for being coated with flat board or the Amici prism of depolarization spectro-film.
4. extreme Ultraviolet Lithography Source according to claim 1 collects mirror measuring contamination device, it is characterized in that described quarter-wave plate (5) is crystalline material type quarter-wave plate, multi-component compound quarter-wave plate, reflection rib build quarter-wave plate or birefringent film type quarter-wave plate.
5. extreme Ultraviolet Lithography Source according to claim 1 collects mirror measuring contamination device, it is characterized in that described synchro phase shifter (6) produces the superimposed figure in several positions successively with certain phasic difference simultaneously.
6. extreme Ultraviolet Lithography Source according to claim 1 collects mirror measuring contamination device, it is characterized in that described signal processing system (7) forms by IMAQ CCD with the computer of position superimposed figure treatment and analyses software.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101981504A (en) * | 2008-04-01 | 2011-02-23 | Asml荷兰有限公司 | Lithographic apparatus and contamination detection method |
| CN102261985A (en) * | 2011-06-13 | 2011-11-30 | 中国科学院长春光学精密机械与物理研究所 | Optical system wave aberration calibration apparatus and calibration method of using apparatus to test error |
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| KR101422256B1 (en) * | 2009-06-19 | 2014-07-22 | 케이엘에이-텐코어 코오포레이션 | Inspection systems and methods for detecting defects on extreme ultraviolet mask blanks |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101981504A (en) * | 2008-04-01 | 2011-02-23 | Asml荷兰有限公司 | Lithographic apparatus and contamination detection method |
| CN102261985A (en) * | 2011-06-13 | 2011-11-30 | 中国科学院长春光学精密机械与物理研究所 | Optical system wave aberration calibration apparatus and calibration method of using apparatus to test error |
Non-Patent Citations (1)
| Title |
|---|
| 极紫外光刻;范品忠等;《激光与光电子学进展》;20000229(第2期);第1-12页 * |
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Effective date of registration: 20180328 Address after: 201815 room 3, 3 J665, room 55, Huiyuan Road, Jiading District, Shanghai Patentee after: Shanghai Zhongke Shenguang Photoelectric Industry Co Ltd Address before: 201800 Jiading District 800-211 post office box, Shanghai Patentee before: Shanghai Optical Precision Machinery Inst., Chinese Academy of Sciences |