CN100340838C - Method and device for measuring double refraction single-shaft crystal wave plate thickness - Google Patents

Method and device for measuring double refraction single-shaft crystal wave plate thickness Download PDF

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CN100340838C
CN100340838C CNB2005100300948A CN200510030094A CN100340838C CN 100340838 C CN100340838 C CN 100340838C CN B2005100300948 A CNB2005100300948 A CN B2005100300948A CN 200510030094 A CN200510030094 A CN 200510030094A CN 100340838 C CN100340838 C CN 100340838C
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wave plate
measured
polarizer
lambda
thickness
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CN1743796A (en
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林礼煌
冯伟伟
欧阳斌
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Shanghai Institute of Optics and Fine Mechanics of CAS
Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Abstract

The present invention relates to a method and a device for measuring thickness of a double refraction uniaxial crystal wave plate. The methed of the present invention comprises the following steps: (1) a wave plate to be measured is arranged in parallel with the direction of the transmission axis or in the light path of a polarizer and a polarization analyzer which are arranged in an orthogonal mode so as to form a sandwich type structure; (2) the optical axis of the wave plate to be measured to rotated so as to form an included angle of pi /4 or 3 pi /4 with the polarizer; (3) a light source of white light is turn on, and the emitted parallel light beams with continuous wave lengths orderly pass through a beam defining jaw, the polarizer, the wave plate to be measured and a beam splitter of the polarization analyzer, are received by a spectrograph and is processed by a computer in a data processing mode so as to obtain a spectrum resolution normalized transmissivity curve; (4) the wave length values (lambada 1 and lambada 2,) corresponding to two peak points on the spectrum resolution normalized transmissivity curve are taken, and the thickness D of the wave plate to be measured is directly calculated by the computer. The measuring method of the present invention belongs to the non-contact measurement and is convenient in use; the measuring method of the present invention proves to be high in measuring precision after trials, and the measuring error of the thickness is smaller than 0.1 micrometer.

Description

Measure the method for double refraction single-shaft crystal wave plate thickness
Technical field
The present invention relates to optical measurement, particularly a kind of method and apparatus of measuring double refraction single-shaft crystal wave plate thickness.
Background technology
What the double refraction single-shaft crystal wave plate that optically is widely used worked is the phase-delay quantity of wave plate.Wave plate is under the accurately directed situation of optical axis, and the thickness of wave plate determines its phase-delay quantity.The accurate control of thickness and measurement are crucial in process of production, and can it be directly connected to and obtain needed phase-delay quantity.Measurement for optical wave plate thickness, existing patent of invention ZL01132359.0, name is called " detector of optical wave plate ", this patent is described a kind of method of measuring the optics wave plate thickness: wave plate to be measured is clipped between the polarizer and the analyzer, and the optical axis that makes wave plate becomes π/4 (optical axis of wave plate will be determined with additive method in advance) with the axis of homology direction of the polarizer, and with the laser instrument of a specific wavelength λ as light source, the light that this laser instrument sends vertically passes through the polarizer, wave plate, analyzer, rotate analyzer (is axis with the incident ray) subsequently, record wave plate to the phase lag angle of this specific wavelength λ (phase place that ordinary light and extraordinary ray produce in the crystal birefringence poor, be usually said phase-delay quantity), by the corresponding relation that exists between drag angle and the wave plate equivalent thickness, thereby obtain the net thickness d of corresponding zero-th order waveplates.Usually, because the thickness of zero-th order waveplates is too thin, is difficult for processing and uses, general way is to be several full-wave plate thickness d to tens these wavelength at the thickness that makes wave plate λThe thickness of the required zero-th order waveplates of last stack.For this multistage wave plate, its wave plate absolute thickness D should for:
D=Nd λ+d
Wherein N is the long one-tenth-value thickness 1/10 (d of contained all-wave in the absolute thickness λ) integral multiple.The measuring method that this patented technology provided can't directly be measured the absolute thickness of wave plate, can only at first measure this wave plate corresponding to the specific wavelength λ phase-delay quantity of (being used for the wavelength as the laser instrument correspondence of measurement light source), by calculating thickness d.Adopt a kind of method of correction to calculate the absolute thickness of wave plate then: promptly must carry out a bigness scale to the thickness of wave plate to be measured in advance, thereby determine full-wave plate one-tenth-value thickness 1/10 (d corresponding to wavelength X λ) quantity N, behind the substitution following formula, just can obtain at last the absolute thickness of wave plate to be measured.In this sense, this measuring method does not belong to absolute measurement.
The another one shortcoming of above-mentioned patent measuring method is: require to make with additive method in advance the direction of the optical axis of wave plate to be measured, make the optical axis of wave plate to be measured become π/4 with the axis of homology of the polarizer again, just can carry out correct measurement then.And this instrument and measuring method thereof can't directly pick out the optical axis of wave plate, and the direction of optical axis must be in advance by other instrumental calibrations.
Summary of the invention
The objective of the invention is to overcome the shortcoming of above-mentioned existing patented technology, propose a kind of method and apparatus of measuring double refraction single-shaft crystal wave plate thickness, this method needn't be measured the roughly thickness of wave plate in advance, to determine the value of N; Also needn't determine the orientation of wave plate optical axis in advance, as long as the direction of its optical axis becomes π/4 or 3 π/4 with the axis of homology direction of the polarizer, and this angle can be determined in the process of measuring automatically.
Technical solution of the present invention is as follows:
A kind of method of measuring double refraction single-shaft crystal wave plate thickness is characterized in that this method may further comprise the steps:
1. wave plate to be measured is placed among the light path that the polarizer that parallel placement of axis of homology direction or quadrature place and analyzing shake, constitute " sandwich " formula structure;
2. rotating the optical axis direction of wave plate to be measured and the axis of homology angle of the polarizer is π/4 or 3 π/4;
3. open white light source, the parallel beam of the continuous wavelength of outgoing is successively by behind beam-defining jaw, the polarizer, wave plate to be measured, analyzer and the spectroscope, receive through spectrometer, and carry out data processing, obtain a spectrally resolved normalized transmittance curve by computing machine;
4. get the wavelength numerical value λ of two peak point place correspondences on the described spectrally resolved normalized transmittance curve 1And λ 2, calculate the thickness D that tries to achieve wave plate to be measured according to following formula by described computing machine:
D = m 2 - m 1 K ( λ 2 ) - K ( λ 1 ) = Δm K ( λ 2 ) - K ( λ 1 ) ,
In the formula, K ( λ ) = n e ( λ ) - n o ( λ ) λ , n e(λ)-n o(λ) be wave plate birefringence rate variance to be measured;
λ 1And λ 2Be the wavelength of selected two peak correspondences, and λ 1>λ 2
m 1And m 2Be that wave plate is at λ 1And λ 2The relative level of the crest that the place is corresponding.
When two peak points are adjacent peak point on the described transmittance graph, Δ m=1.
Described spectrally resolved normalized transmittance curve obtains by twice measurement: when the polarizer becomes the optical axis of parastate and wave plate or pi/2 parallel with the axis of homology of the polarizer with analyzer, the operating measurement system, obtaining one is the first light intensity function curve I of the transmitted light of variable with spectrum 1(λ), then wave plate to be measured is rotated π/4 or 3 π/4, operating measurement system once more, going out one again is the second light intensity function curve I of the transmitted light of variable with spectrum 2(λ), computing machine is with the second light intensity function curve I 2(λ) with the first light intensity function curve I 1(λ) transmitted intensity of identical wavelength is done normalized, i.e. T (λ)=I by formula 2(λ)/I 1(λ) calculate, draw spectrally resolved normalization transmittance curve T (λ).
" sandwich " formula device that described spectrally resolved normalized transmittance curve also can constitute the polarizer, wave plate to be measured and analyzer, the polarizer is parallel with the axis of homology of analyzer, after the axis of homology angle of the optical axis direction of wave plate to be measured and the polarizer is adjusted into π/4 or 3 π/4, directly put into the photometric sample chamber of scanning that connects computing machine, acquire a spectrally resolved normalized transmittance curve T (λ).
A kind of device of measuring double refraction single-shaft crystal wave plate thickness, the white light source that comprises an output parallel beam, working direction at this white light source output beam is beam-defining jaw, the polarizer, analyzer, beam splitter, spectrometer with optical axis ground successively, described analyzer is fixed on the second angular turn platform, between the described polarizer and analyzer, be provided with for the first angular turn platform of placing wave plate to be measured, reflected light direction at described beam splitter has a light intensity monitor, and the output terminal of described spectrometer 10 links to each other with the input end of computing machine 11.The described described polarizer and analyzer are the uniaxial crystal polarizing prisms, or the polaroid of multilayer dielectric film, or dichroic polarizer.
Described spectrometer is one to have the higher spectral instrument of wavelength resolution of CCD receiver, and its spectral coverage is from 400nm to 1000nm.
Described wave plate to be measured is that its optical axis is parallel with logical light face, can produce the double refraction single-shaft crystal wave plate of phase-delay quantity.
Described computing machine is the computing machine that following data processor is installed:
1. with the second light intensity function curve I 2(λ) with the first light intensity function curve I 1(λ) light intensity that sees through of identical wavelength is done normalized, obtains spectrally resolved normalization transmittance curve T (λ);
2. choose the wavelength numerical value λ of two peak point place correspondences on the described transmittance graph automatically 1And λ 2, try to achieve the thickness D of wave plate to be measured by computing machine.
Advantage of the present invention is the direct measurement to the absolute thickness of double refraction single-shaft crystal wave plate, and this method needn't be measured the roughly thickness of wave plate to be measured in advance, to determine the value of N; Also needn't determine the orientation of wave plate optical axis in advance, as long as the direction of its optical axis becomes π/4 or 3 π/4 with the axis of homology direction of the polarizer, and this angle can be determined in the process of measuring automatically.The measuring accuracy height of the inventive method, when the resolution of spectrum scanner reached 0.01nm, the thickness measure precision of wave plate can be better than 0.1 μ m.
Description of drawings
Fig. 1 measures the structural representation of double refraction single-shaft crystal wave plate thickness device for the present invention.
Fig. 2 is an a certain thickness and when setting the luminescent spectrum of white light source setting double refraction single-shaft crystal wave plate, the spectrum that is calculated be variable see through light intensity function curve I 1(λ) and I 2(λ) example.Wherein horizontal ordinate λ represents wavelength, the nm of unit (nanometer).Ordinate I is a light intensity, and unit is an arbitrary unit, and T represents transmitance.
Spectrally resolved normalization transmittance curve T (λ) example that Fig. 3 obtains under the situation of Fig. 2, T (λ)=I 2(λ)/I 1(λ);
Fig. 4 is the spectrally resolved normalization transmittance curve T synoptic diagram of the quartz crystal wave plate of the actual a slice unknown thickness that records.
Among the figure: the white light source 2-beam-defining jaw of 1-output parallel beam
3-polarizer 4-wave plate 5-to be measured angular turn platform
6-analyzer 7-angular turn platform 8-beam splitter
9-light intensity monitor 10-spectrometer 11-computing machine
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
See also Fig. 1 earlier, Fig. 1 measures the structural representation of double refraction single-shaft crystal wave plate thickness device for the present invention.As seen from the figure, implement the device of the measurement double refraction single-shaft crystal wave plate thickness of the inventive method, comprise-export the white light source 1 of parallel beam, working direction at this white light source 1 output beam is a beam-defining jaw 2 with optical axis ground successively, the polarizer 3, analyzer 6, beam splitter 8, spectrometer 10, described analyzer 6 is fixed on the second angular turn platform 7, between the described polarizer 3 and analyzer 6, be provided with for the first angular turn platform 5 of placing wave plate 4 to be measured, reflected light direction at described beam splitter 8 has a light intensity monitor 9, and the output terminal of described spectrometer 10 links to each other with the input end of computing machine 11.
The described polarizer 4 and analyzer 6 are uniaxial crystal polarizing prisms, or the polaroid of multilayer dielectric film, or dichroic polarizer.
Described spectrometer 10 is one to have the higher spectral instrument of wavelength resolution of CCD receiver, and its spectral coverage is from 400nm to 1000nm.
Described wave plate to be measured 4 is that its optical axis is parallel with logical light face, can produce the double refraction single-shaft crystal wave plate of phase-delay quantity.
Described computing machine 11 is computing machines that following data processor is installed:
1. with the second light intensity function curve I 2(λ) with the first light intensity function curve I 1(λ) light intensity that sees through of identical wavelength is done normalized, obtains spectrally resolved normalization transmittance curve T (λ);
2. get the wavelength numerical value λ of two peak point place correspondences on the described transmittance graph 1And λ 2, try to achieve the thickness D of wave plate 4 to be measured by computing machine 11.
The method of measurement double refraction single-shaft crystal wave plate thickness of the present invention may further comprise the steps:
1. wave plate 4 to be measured is placed the polarizer 3 that parallel placement of axis of homology direction or quadrature place and analyzing to shake among 6 the light path, constitute " sandwich " formula structure;
2. rotating the optical axis direction of wave plate 4 to be measured and the axis of homology angle of the polarizer 3 is π/4 or 3 π/4;
3. open white light source 1, the parallel beam of the continuous wavelength of outgoing is successively by behind beam-defining jaw 2, the polarizer 3, wave plate to be measured 4, analyzer 6 and the spectroscope 8, receive through spectrometer 10, and carry out data processing, obtain a spectrally resolved normalized transmittance curve by computing machine 11;
4. get the wavelength numerical value λ of two peak point place correspondences on the described spectrally resolved normalized transmittance curve 1And λ 2, calculate the thickness D that tries to achieve wave plate to be measured according to following formula by computing machine 11:
D = m 2 - m 1 K ( λ 2 ) - K ( λ 1 ) = Δm K ( λ 2 ) - K ( λ 1 ) ,
In the formula, K ( λ ) = n e ( λ ) - n o ( λ ) λ , n e(λ)-n o(λ) be wave plate birefringence rate variance to be measured;
λ 1And λ 2Be the wavelength of selected two peak correspondences, and λ 1>λ 2
m 1And m 2Be that wave plate is at λ 1And λ 2The relative level of the crest that the place is corresponding.
Two peak points are adjacent peak point on the described transmittance graph.
Described spectrally resolved normalized transmittance curve obtains by twice measurement: when 6 one-tenth parastates of the polarizer 3 and analyzer, and the operating measurement system, obtaining one is the first light intensity function curve I that sees through light of variable with spectrum 1(λ), then wave plate 4 to be measured is rotated π/4, operating measurement system once more, going out one again is the second light intensity function curve I that sees through light of variable with spectrum 2(λ), computing machine 11 is with the second light intensity function curve I 2(λ) with the first light intensity function curve I 1(λ) light intensity that sees through of identical wavelength is done normalized, i.e. T (λ)=I by formula 2(λ)/I 1(λ) calculate, draw spectrally resolved normalization transmittance curve T (λ).
After the optical axis direction wave plate 4 to be measured of " sandwich " formula device that described spectrally resolved normalized transmittance curve also can constitute the polarizer 3, wave plate to be measured 4 and analyzer 6, the axis of homology angle of analyzer 6 are adjusted into π/4 or 3 π/4, directly put into the photometric sample chamber of connection computing machine 11 scannings, acquire a spectrally resolved normalized transmittance curve T (λ).
Measuring process of the present invention is roughly as follows:
Open the white light source 1 of output parallel beam, after the adjusting polarizer 3 and analyzer 6 are orthogonal, put wave plate 4 to be measured in the centre, the optical axis of wave plate 4 to be measured is perpendicular to ray axis, and the polarizer 3, wave plate to be measured 4 and analyzer 6 constitute " sandwich " structures.Rotate the first angular turn platform, 5 rotations wave plate 4 to be measured then, detect the light intensity that enters into light intensity monitor 9 from the folded light beam of beam splitter 8 simultaneously, find out the position of " sandwich " device transmitance wave plate to be measured 4 hour, be the extinction position, this position is the optical axis and the parallel or vertical position of the axis of homology of the polarizer 3 of wave plate 4 to be measured herein.Then make analyzer 6 rotation pi/2s, make 6 one-tenth parastates of the polarizer 3 and analyzer by rotating the second angular turn platform 7.The operating measurement system, obtaining one is the first light intensity function curve I that sees through light of variable with spectrum 1(λ).Then rotate the first angular turn platform 5 rotation wave plate 4 to be measured again and rotate π/4, clockwise or counterclockwise all can, operating measurement system once more, going out one again is the second light intensity function curve I that sees through light of variable with spectrum 2(λ).Computing machine 11 is with the second light intensity function curve I 2(λ) with the first light intensity function curve I 1(λ) light intensity that sees through of identical wavelength is done normalized, draws spectrally resolved normalization transmittance curve T (λ), i.e. T (λ)=I 2(λ)/I 1(λ), this process is converted into shown in Figure 3 by Fig. 2.Get the wavelength data at two peaks again from spectrally resolved normalization transmittance curve T (λ), calculate the thickness D of wave plate by calculating formula.
D = m 2 - m 1 K ( λ 2 ) - K ( λ 1 ) = Δm K ( λ 2 ) - K ( λ 1 ) ,
In the formula, K ( λ ) = n e ( λ ) - n o ( λ ) λ , λ 1And λ 2Be the wavelength of selected two peak correspondences, and λ 1>λ 2, m 1And m 2Be that wave plate is at λ 1And λ 2The relative level that the place is corresponding.It reduces with the increase of wavelength, and the differential of adjacent peak is decided to be 1.As get the wavelength data at two adjacent peaks, this moment Δ m=1, in fact in order to improve measuring accuracy and simple to operateization, it is the most convenient to get Δ m=1.Double refraction single-shaft crystal refringence n e(λ)-n o(λ) determine (can look into relevant crystal refractive index databook) by the dispersion equation of existing refringence, the form of formula is:
[ n e ( λ ) - n o ( λ ) ] = Σ i , n = - ∞ + ∞ a i λ n + t ( λ ) , Wherein, t (λ) is a temperature funtion.
Resulting spectrally resolved normalization transmittance curve (Fig. 3) is the multimodal paddy vibrational line that does not wait in a cycle, increases gradually along the distance at spectrum long wave direction peak and peak.This curve has obvious characteristics: corresponding to the wave plate of a definite thickness, have only a unique curve corresponding with it.This curve is comprising the spectrally resolved phase delay information of wave plate to be measured 4.Promptly can be judged wave plate 4 to be measured by resulting spectrally resolved normalization transmittance curve: the peak of curve shows that wave plate to be measured is the full-wave plate of this peak institute corresponding wavelength, and the paddy of curve shows that wave plate 4 to be measured is half-wave plates of this paddy institute corresponding wavelength, transmitance is 0.5 part, wave plate to be measured is the quarter wave plate of this place corresponding wavelength just, and the rest may be inferred by analogy goes out the phase-delay quantity of the pairing wavelength of wave plate to be measured for it.
Be an application example below:
The quartz crystal half-wave plate that a slice is nominally 1064nm is measured, the dispersion equation of known quartz crystal birefringence rate variance:
10 3[n e(λ)-n o(λ)]=8.86410+0.107057λ -2+0.0019893λ -4-0.17175λ 2-10 -3t(1+t/900)(1.01+0.2λ 2),
In the formula, the unit of wavelength X is a micron (μ m); Temperature t is the temperature (identical with environment temperature) of wave plate when measuring quartz wave-plate, and its unit is ℃.
Wave plate put between parallel polarizer constitute " sandwich " structure (temperature is 25 ℃ during measurement), according to above-mentioned measuring process, the spectrally resolved normalization transmittance curve that obtains this wave plate as shown in Figure 4, spectral resolution is 0.1nm.In this curve, the wavelength of two adjacent peak correspondences of taking-up is λ 1=1147.8nm and λ 2=993.7nm, λ 1>λ 2, this moment Δ m=1.n e1)-n o1)=8.68751×10 -3,K(λ 1)=7.56884×10 -3;n e2)-n o2)=8.77394×10 -3,K(λ 2)=8.82957×10 -3。According to formula D = 1 K ( λ 2 ) - K ( λ 1 ) Calculate, the thickness that obtains wave plate is 793.2 μ m.
Measuring method of the present invention belongs to non-cpntact measurement, and is easy to use through probationary certificate the inventive method, and this method needn't be measured the roughly thickness of wave plate in advance, to determine the value of N; Also needn't determine the orientation of wave plate optical axis in advance, as long as the direction of its optical axis becomes π/4 or 3 π/4 with the axis of homology direction of the polarizer, and this angle can determine automatically in the process of measuring that device is simple, measuring accuracy height, thickness measure error can be better than 0.1 μ m.

Claims (4)

1, a kind of method of measuring double refraction single-shaft crystal wave plate thickness is characterized in that this method may further comprise the steps:
1. wave plate to be measured (4) is placed among the light path of the polarizer (3) that parallel placement of axis of homology direction or quadrature place and analyzer (6), constitute " sandwich " formula structure;
2. rotating the optical axis direction of wave plate to be measured (4) and the axis of homology angle of the polarizer (3) is π/4 or 3 π/4;
3. open white light source (1), the parallel beam of the continuous wavelength of outgoing is successively by behind beam-defining jaw (2), the polarizer (3), wave plate to be measured (4), analyzer (6) and the spectroscope (8), receive through spectrometer (10), and carry out data processing by computing machine (11), obtain a spectrally resolved normalized transmittance curve;
4. get the wavelength numerical value λ of two peak point place correspondences on the described spectrally resolved normalized transmittance curve 1And λ 2, calculate the thickness D that tries to achieve wave plate to be measured according to following formula by computing machine (11):
D = m 2 - m 1 K ( λ 2 ) - K ( λ 1 ) = Δm K ( λ 2 ) - K ( λ 1 ) ,
In the formula, K ( λ ) = n e ( λ ) - n o ( λ ) λ , n e(λ)-n o(λ) be wave plate birefringence rate variance to be measured;
λ 1And λ 2Be the wavelength of selected two peak correspondences, and λ 1>λ 2
m 1And m 2Be that wave plate is at λ 1And λ 2The relative level of the crest that the place is corresponding.
2, the method for measurement double refraction single-shaft crystal wave plate thickness according to claim 1 is characterized in that two peak points are adjacent peak point on the described transmittance graph.
3, the method for measurement double refraction single-shaft crystal wave plate thickness according to claim 1, it is characterized in that described spectrally resolved normalized transmittance curve obtains by twice measurement: become the optical axis of parastate and wave plate parallel with the axis of homology of the polarizer (3) or when becoming pi/2 with analyzer (6) at the polarizer (3), the operating measurement system, obtaining one is the first light intensity function curve I of the transmitted light of variable with spectrum 1(λ), then wave plate to be measured (4) is rotated π/4 or 3 π/4, operating measurement system once more, going out one again is the second light intensity function curve I of the transmitted light of variable with spectrum 2(λ), computing machine (11) is with the second light intensity function curve I 2(λ) with the first light intensity function curve I 1(λ) transmitted intensity of identical wavelength is done normalized, i.e. T (λ)=I by formula 2(λ)/I 1(λ) calculate, draw spectrally resolved normalization transmittance curve T (λ).
4, the method of measurement double refraction single-shaft crystal wave plate thickness according to claim 1, it is characterized in that described spectrally resolved normalized transmittance curve is with the polarizer (3), " sandwich " formula device that wave plate to be measured (4) and analyzer (6) constitute, the polarizer (3) is parallel with the axis of homology of analyzer (6), after the axis of homology angle of the optical axis direction of wave plate to be measured (4) and the polarizer (3) is adjusted into π/4 or 3 π/4, directly put into the photometric sample chamber of scanning that connects computing machine, directly acquire a spectrally resolved normalized transmittance curve T (λ).
CNB2005100300948A 2005-09-28 2005-09-28 Method and device for measuring double refraction single-shaft crystal wave plate thickness Expired - Fee Related CN100340838C (en)

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