CN103208737A - 一种紫外出光屏的制作方法及制得的紫外出光屏和应用 - Google Patents
一种紫外出光屏的制作方法及制得的紫外出光屏和应用 Download PDFInfo
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- CN103208737A CN103208737A CN2012105599975A CN201210559997A CN103208737A CN 103208737 A CN103208737 A CN 103208737A CN 2012105599975 A CN2012105599975 A CN 2012105599975A CN 201210559997 A CN201210559997 A CN 201210559997A CN 103208737 A CN103208737 A CN 103208737A
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CN103208737A true CN103208737A (zh) | 2013-07-17 |
CN103208737B CN103208737B (zh) | 2016-01-20 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5473396A (en) * | 1993-09-08 | 1995-12-05 | Matsushita Electric Industrial Co., Ltd. | Display apparatus and method of making the same |
US20050110386A1 (en) * | 2003-11-03 | 2005-05-26 | Tiberi Michael D. | Laser cathode ray tube |
CN101409963A (zh) * | 2007-10-09 | 2009-04-15 | 中国科学院物理研究所 | 一种用电子束泵浦晶体材料产生紫外光的装置和方法 |
CN102306600A (zh) * | 2011-07-19 | 2012-01-04 | 东华理工大学 | 一种蓝延伸变带隙AlGaAs/GaAs光电阴极及其制备方法 |
CN102315096A (zh) * | 2011-08-19 | 2012-01-11 | 上海新傲科技股份有限公司 | 多层半导体衬底的制备方法 |
CN102412180A (zh) * | 2010-09-25 | 2012-04-11 | 中国科学院微电子研究所 | 一种soi衬底和具有soi衬底的半导体器件及其形成方法 |
CN102709251A (zh) * | 2011-03-11 | 2012-10-03 | Soitec公司 | 具有本征半导体层的晶片 |
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- 2012-12-20 CN CN201210559997.5A patent/CN103208737B/zh not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5473396A (en) * | 1993-09-08 | 1995-12-05 | Matsushita Electric Industrial Co., Ltd. | Display apparatus and method of making the same |
US20050110386A1 (en) * | 2003-11-03 | 2005-05-26 | Tiberi Michael D. | Laser cathode ray tube |
CN101409963A (zh) * | 2007-10-09 | 2009-04-15 | 中国科学院物理研究所 | 一种用电子束泵浦晶体材料产生紫外光的装置和方法 |
CN102412180A (zh) * | 2010-09-25 | 2012-04-11 | 中国科学院微电子研究所 | 一种soi衬底和具有soi衬底的半导体器件及其形成方法 |
CN102709251A (zh) * | 2011-03-11 | 2012-10-03 | Soitec公司 | 具有本征半导体层的晶片 |
CN102306600A (zh) * | 2011-07-19 | 2012-01-04 | 东华理工大学 | 一种蓝延伸变带隙AlGaAs/GaAs光电阴极及其制备方法 |
CN102315096A (zh) * | 2011-08-19 | 2012-01-11 | 上海新傲科技股份有限公司 | 多层半导体衬底的制备方法 |
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