CN103208514A - 一种含有金属的半导体装置及其制备方法 - Google Patents
一种含有金属的半导体装置及其制备方法 Download PDFInfo
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- CN103208514A CN103208514A CN2012100281792A CN201210028179A CN103208514A CN 103208514 A CN103208514 A CN 103208514A CN 2012100281792 A CN2012100281792 A CN 2012100281792A CN 201210028179 A CN201210028179 A CN 201210028179A CN 103208514 A CN103208514 A CN 103208514A
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CN201210028179.2A CN103208514B (zh) | 2012-01-14 | 2012-01-14 | 一种含有金属的半导体装置及其制备方法 |
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CN201210028179.2A CN103208514B (zh) | 2012-01-14 | 2012-01-14 | 一种含有金属的半导体装置及其制备方法 |
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CN103208514A true CN103208514A (zh) | 2013-07-17 |
CN103208514B CN103208514B (zh) | 2017-05-17 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263657A (ja) * | 1994-03-25 | 1995-10-13 | Sony Corp | 量子素子 |
US5608231A (en) * | 1993-10-28 | 1997-03-04 | Sony Corporation | Field effect transistor having channel with plural quantum boxes arranged in a common plane |
CN1145139A (zh) * | 1994-03-31 | 1997-03-12 | 太平太阳有限公司 | 具有埋入触头的多层薄膜太阳能电池 |
US5856681A (en) * | 1994-10-04 | 1999-01-05 | Fujitsu Limited | Semiconductor device |
CN1543652A (zh) * | 2001-08-13 | 2004-11-03 | �Ƚ�װ�ù�˾ | 存储器单元 |
CN101238598A (zh) * | 2005-06-15 | 2008-08-06 | 京瓷株式会社 | 层叠型压电元件及使用其的喷射装置 |
US20100102298A1 (en) * | 2008-10-26 | 2010-04-29 | Koucheng Wu | Schottky barrier quantum well resonant tunneling transistor |
CN101897083A (zh) * | 2007-12-10 | 2010-11-24 | 富士胶片株式会社 | 各向异性导电接合组件 |
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2012
- 2012-01-14 CN CN201210028179.2A patent/CN103208514B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5608231A (en) * | 1993-10-28 | 1997-03-04 | Sony Corporation | Field effect transistor having channel with plural quantum boxes arranged in a common plane |
JPH07263657A (ja) * | 1994-03-25 | 1995-10-13 | Sony Corp | 量子素子 |
CN1145139A (zh) * | 1994-03-31 | 1997-03-12 | 太平太阳有限公司 | 具有埋入触头的多层薄膜太阳能电池 |
US5856681A (en) * | 1994-10-04 | 1999-01-05 | Fujitsu Limited | Semiconductor device |
CN1543652A (zh) * | 2001-08-13 | 2004-11-03 | �Ƚ�װ�ù�˾ | 存储器单元 |
CN101238598A (zh) * | 2005-06-15 | 2008-08-06 | 京瓷株式会社 | 层叠型压电元件及使用其的喷射装置 |
CN101897083A (zh) * | 2007-12-10 | 2010-11-24 | 富士胶片株式会社 | 各向异性导电接合组件 |
US20100102298A1 (en) * | 2008-10-26 | 2010-04-29 | Koucheng Wu | Schottky barrier quantum well resonant tunneling transistor |
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CN103208514B (zh) | 2017-05-17 |
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Effective date of registration: 20170427 Address after: 310027 Hangzhou, Zhejiang Province, Xihu District, Zhejiang Road, No. 38, No. Applicant after: Sheng Kuang Address before: 113200 Liaoning Province Xinbin Manchu Autonomous County Federation of disabled persons Applicant before: Zhu Jiang Applicant before: Sheng Kuang |
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Effective date of registration: 20211228 Address after: 310000 Yuhang Tang Road, Xihu District, Hangzhou, Zhejiang 866 Patentee after: ZHEJIANG University Address before: 310027 No. 38, Zhejiang Road, Hangzhou, Zhejiang, Xihu District Patentee before: Sheng Kuang |
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