CN103207431B - Optical fiber welding technology - Google Patents
Optical fiber welding technology Download PDFInfo
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- CN103207431B CN103207431B CN201210007827.6A CN201210007827A CN103207431B CN 103207431 B CN103207431 B CN 103207431B CN 201210007827 A CN201210007827 A CN 201210007827A CN 103207431 B CN103207431 B CN 103207431B
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Abstract
The invention discloses an optical fiber welding technology. The technology comprises the steps of a, plating a silver layer of 1-3 mu m on the circumference of an optical fiber, and then plating an indium layer of 5-20 mu m on the silver layer; b, plating a silver layer of 1-6 mu m on a V-shaped groove of a silicon chip, and then filling a borosilicate glass layer of 10-100 mu m or a NaSiO2 layer; and c, placing the optical fiber obtained in Step a into the V-shaped groove in Step b, and heating the silicon chip to a temperature of 80-200 DEG C under a voltage of 100-700 V for 1-50 minutes. According to the process, indium is plated outside the optical fiber, and the indium is soft solder and is high in malleability, so that damage caused by thermal expansion coefficients between the optical fiber and the silicon chip is reduced, and the optical fiber is prevented from being separated from the silicon chip due to different thermal expansion coefficients. Compared with the prior art, the optical fiber welding process has the advantages that the usage of epoxy resin is prevented; the layer of silver is first plated in the V-shaped groove, so that the electrical conductivity during welding is improved; and the bottom of the V-shaped groove is filled with borosilicate glass, so that the contact area between the optical fiber and the V-shaped groove is increased, and the welding is more firm.
Description
Technical field
The present invention relates to a kind of preparation method of integrated optical device, be specifically related to the method for the V-type groove combination of a kind of optical fiber and silicon.
Background technology
Integrated optical device is widely used in a lot of fields.In manufacture craft, between optical fiber and Si chip, need to combine.The general method adopting is on Si matrix, to erode away V-type groove, and optical fiber is put into groove, utilizes the method such as epoxy resin, laser bonding that optical fiber and V-type groove are combined.And laser bonding needs an iron hoop, cumbersome, epoxy resin is easily aging, and epoxy resin when dry optical fiber be easily shifted, during with laser coupled, after optical fiber displacement, light can not enter optical fiber; In addition, epoxy resin is organism, can work the mischief by noise spectra of semiconductor lasers chamber face.
Summary of the invention
The object of the invention is, for above-mentioned existing methodical deficiency, provides a kind of optical fiber welding method, can make the stable combination of optical fiber and silicon chip, and light is easy to enter optical fiber.
Technical scheme of the present invention is carried out with following step: a kind of optical fiber welding method, carry out according to following step: a, plate the silver layer of 1 ~ 3 μ m at optical fiber circumference, plate afterwards the indium layer of 5 ~ 20 μ m; B, on the V-type groove of silicon chip, plate the silver layer of one deck 1 ~ 6 μ m, recharge afterwards pyrex layer or the NaSiO of one deck 10 ~ 100 μ m
2layer; C, the optical fiber obtaining in step a is put into the V-type groove of step b, under 100 ~ 700v voltage, heating silicon chip to 80 ~ 200 DEG C, continued 1-50 minute.
In described step b, pyrex utilizes thermal evaporation or magnetically controlled sputter method to complete.
NaSiO in described step b
2preparation method is by NaSiO
2solution is full of V-type groove, afterwards 150 ~ 350 DEG C of insulations 30 ~ 120 minutes.
The present invention plates indium metal outward at optical fiber, because indium is soft solder, has larger ductility, reduces the harm causing due to thermal expansivity between optical fiber and silicon chip, prevents that thermal expansivity difference from depart from optical fiber and silicon chip.Compared with prior art, the present invention avoids using epoxy resin.In addition, in V-type groove, first plate one deck silver, the electric conductivity while having increased welding; And V-type trench bottom is filled full pyrex, increase optical fiber and V-type groove contact area, weld more firm.
Brief description of the drawings
Fig. 1 is optical fiber of the present invention welded condition schematic diagram in V-type groove.
Embodiment
Embodiment 1: a kind of optical fiber welding method, carry out according to following step:
A, plate the silver layer 2 of 1 μ m at optical fiber 1 circumference, plate afterwards the indium layer 3 of 5 μ m; Around optical fiber, plating silver is because the reflection that silver can form avoids the light in optical fiber to overflow.Plate indium on silver after, indium is easily oxidized, indium is ductile in addition, can regulate optical fiber that the thermal expansivity of optical fiber and the thermal expansivity of silicon chip are approached, prevent from coming off because thermal expansivity difference causes optical fiber, can not cause device damage because of temperature variation.
B, on the V-type groove of silicon chip 6, plate the silver layer 5 of one deck 1 μ m, recharge afterwards the pyrex layer 4 of one deck 10 μ m, wherein the preparation of pyrex layer can adopt thermal evaporation or magnetron sputtering method; Silver-platedly on V-type groove can in the time of electric field auxiliary welding, increase electric conductivity.
C, the optical fiber obtaining in step a is put into the V-type groove of step b, under 100 ~ 700v voltage, heating silicon chip to 80 ~ 200 DEG C, continued 1-50 minute, when added electric field, optical fiber connects positive pole, silicon chip connects negative pole, can promote the movement of ion after heating silicon chip.
Embodiment 2: a kind of optical fiber welding method, carry out according to following step:
A, plate the silver layer of 2 μ m at optical fiber circumference, plate afterwards the indium layer of 8 μ m;
B, on the V-type groove of silicon chip, plate the silver layer of one deck 2 μ m, recharge afterwards the NaSiO of one deck 20 μ m
2layer, when preparation first by NaSiO
2solution is full of V-type groove, afterwards 150 ~ 350 DEG C of insulations 30 ~ 120 minutes; NaSiO
2layer can be filled V-type trench bottom full, makes optical fiber and silicon chip have sufficient contact, has increased bonding area, makes welding more firm.
C, the optical fiber obtaining in step a is put into the V-type groove of step b, under 100 ~ 700v voltage, heating silicon chip to 80 ~ 200 DEG C, continued 1-50 minute.
Other are with embodiment 1.
Embodiment 3: a kind of optical fiber welding method, carry out according to following step:
A, plate the silver layer of 3 μ m at optical fiber circumference, plate afterwards the indium layer of 12 μ m;
B, on the V-type groove of silicon chip, plate the silver layer of one deck 3 μ m, recharge afterwards the pyrex layer of one deck 30 μ m, wherein the preparation of pyrex can adopt thermal evaporation or magnetron sputtering method;
C, the optical fiber obtaining in step a is put into the V-type groove of step b, under 100 ~ 700v voltage, heating silicon chip to 80 ~ 200 DEG C, continued 1-50 minute.
Other are with embodiment 1.
Embodiment 4: a kind of optical fiber welding method, carry out according to following step:
A, plate the silver layer of 3 μ m at optical fiber circumference, plate afterwards the indium layer of 15 μ m;
B, on the V-type groove of silicon chip, plate the silver layer of one deck 4 μ m, recharge afterwards the NaSiO of one deck 50 μ m
2layer, when preparation first by NaSiO
2solution is full of V-type groove, afterwards 150 ~ 350 DEG C of insulations 30 ~ 120 minutes.；
C, the optical fiber obtaining in step a is put into the V-type groove of step b, under 100 ~ 700v voltage, heating silicon chip to 80 ~ 200 DEG C, continued 1-50 minute.
Other are with embodiment 1.
Embodiment 5: a kind of optical fiber welding method, carry out according to following step:
A, plate the silver layer of 2 μ m at optical fiber circumference, plate afterwards the indium layer of 18 μ m;
B, on the V-type groove of silicon chip, plate the silver layer of one deck 5 μ m, recharge afterwards the pyrex layer of one deck 70 μ m, wherein the preparation of pyrex can adopt thermal evaporation or magnetron sputtering method;
C, the optical fiber obtaining in step a is put into the V-type groove of step b, under 100 ~ 700v voltage, heating silicon chip to 80 ~ 200 DEG C, continued 1-50 minute.
Other are with embodiment 1.
Embodiment 6: a kind of optical fiber welding method, carry out according to following step:
A, plate the silver layer of 1 μ m at optical fiber circumference, plate afterwards the indium layer of 20 μ m;
B, on the V-type groove of silicon chip, plate the silver layer of one deck 6 μ m, recharge afterwards the NaSiO of one deck 100 μ m
2layer, when preparation first by NaSiO
2solution is full of V-type groove, afterwards 150 ~ 350 DEG C of insulations 30 ~ 120 minutes.；
C, the optical fiber obtaining in step a is put into the V-type groove of step b, under 100 ~ 700v voltage, heating silicon chip to 80 ~ 200 DEG C, continued 1-50 minute.
Other are with embodiment 1.
Claims (3)
1. an optical fiber welding method, it is characterized in that carrying out according to following step: a, plate the silver layer of 1 ~ 3 μ m at optical fiber circumference, plate afterwards the indium layer of 5 ~ 20 μ m; B, on the V-type groove of silicon chip, plate the silver layer of one deck 1 ~ 6 μ m, recharge afterwards pyrex layer or the NaSiO of one deck 10 ~ 100 μ m
2layer; C, the optical fiber obtaining in step a is put into the V-type groove of step b, under 100 ~ 700v voltage, heating silicon chip to 80 ~ 200 DEG C, continued 1-50 minute.
2. optical fiber welding method according to claim 1, is characterized in that: in described step b, pyrex utilizes thermal evaporation or magnetically controlled sputter method to complete.
3. optical fiber welding method according to claim 1, is characterized in that: the NaSiO in described step b
2preparation method is by NaSiO
2solution is full of V-type groove, afterwards 150 ~ 350 DEG C of insulations 30 ~ 120 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210007827.6A CN103207431B (en) | 2012-01-12 | 2012-01-12 | Optical fiber welding technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210007827.6A CN103207431B (en) | 2012-01-12 | 2012-01-12 | Optical fiber welding technology |
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| CN103207431A CN103207431A (en) | 2013-07-17 |
| CN103207431B true CN103207431B (en) | 2014-12-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210007827.6A Active CN103207431B (en) | 2012-01-12 | 2012-01-12 | Optical fiber welding technology |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103401136B (en) * | 2013-07-29 | 2016-09-14 | 武汉锐科光纤激光器技术有限责任公司 | A kind of optic fibre fixing device of high power semiconductor lasers coupling |
| CN111318830B (en) * | 2020-04-19 | 2021-01-15 | 大连优迅科技股份有限公司 | Optical fiber metallization preparation device and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101029953A (en) * | 2007-04-04 | 2007-09-05 | 王其彪 | Field fibre-optical fixed connector |
| CN201903698U (en) * | 2010-12-22 | 2011-07-20 | 武汉楚星光纤应用技术有限公司 | Laser spot shaper |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2002256525A1 (en) * | 2001-05-25 | 2002-12-09 | Transparent Networks, Inc. | High density optical fiber array |
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2012
- 2012-01-12 CN CN201210007827.6A patent/CN103207431B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101029953A (en) * | 2007-04-04 | 2007-09-05 | 王其彪 | Field fibre-optical fixed connector |
| CN201903698U (en) * | 2010-12-22 | 2011-07-20 | 武汉楚星光纤应用技术有限公司 | Laser spot shaper |
Non-Patent Citations (2)
| Title |
|---|
| 光纤耦合模块中光纤焊接技术的研究;程东明;《电子与封装》;20070430;第7卷(第4期);全文 * |
| 程东明.光纤耦合模块中光纤焊接技术的研究.《电子与封装》.2007,第7卷(第4期), * |
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