CN103199812A - 应用于无线接收器的放大器与相关方法 - Google Patents
应用于无线接收器的放大器与相关方法 Download PDFInfo
- Publication number
- CN103199812A CN103199812A CN2012105626826A CN201210562682A CN103199812A CN 103199812 A CN103199812 A CN 103199812A CN 2012105626826 A CN2012105626826 A CN 2012105626826A CN 201210562682 A CN201210562682 A CN 201210562682A CN 103199812 A CN103199812 A CN 103199812A
- Authority
- CN
- China
- Prior art keywords
- transistor
- amplifier
- gain control
- input
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000004044 response Effects 0.000 claims abstract description 7
- 230000005669 field effect Effects 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 9
- 230000010355 oscillation Effects 0.000 description 10
- 230000000295 complement effect Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000013519 translation Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
- H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/144—Indexing scheme relating to amplifiers the feedback circuit of the amplifier stage comprising a passive resistor and passive capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/346,921 | 2012-01-10 | ||
US13/346,921 US8665027B2 (en) | 2012-01-10 | 2012-01-10 | Amplifier for wireless receiver and associated method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103199812A true CN103199812A (zh) | 2013-07-10 |
CN103199812B CN103199812B (zh) | 2016-08-24 |
Family
ID=48722201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210562682.6A Active CN103199812B (zh) | 2012-01-10 | 2012-12-21 | 应用于无线接收器的放大器与相关方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8665027B2 (zh) |
CN (1) | CN103199812B (zh) |
TW (1) | TWI508433B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112234944A (zh) * | 2020-09-14 | 2021-01-15 | 成都振芯科技股份有限公司 | 一种无电感宽带低噪声放大器 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9231529B2 (en) * | 2013-12-16 | 2016-01-05 | Motorola Solutions, Inc. | Switchable multi-output low-noise amplifier with distortion cancellation |
CN103888083B (zh) * | 2014-03-20 | 2018-06-19 | 北京工业大学 | 宽带低噪声放大器 |
US9887678B2 (en) * | 2015-12-22 | 2018-02-06 | Qualcomm Incorporated | Linear low noise amplifier |
US9641141B1 (en) * | 2016-02-29 | 2017-05-02 | Hong Kong Applied Science and Technology Research Institute Company Limited | Harmonics suppression circuit for a switch-mode power amplifier |
CN107453716B (zh) * | 2016-06-01 | 2020-10-30 | 深圳骏通微集成电路设计有限公司 | 一种低噪声放大器、无线信号接收装置和无线终端 |
SG11202108260UA (en) * | 2020-04-13 | 2021-11-29 | Skyworks Solutions Inc | Amplifier having input power protection |
US20220416722A1 (en) * | 2021-06-23 | 2022-12-29 | Intel Corporation | Amplifier circuit with an envelope enhancement |
US20230336128A1 (en) * | 2022-04-14 | 2023-10-19 | Qorvo Us, Inc. | Amplitude modulation-phase modulation (am-pm) linearization in a power amplifier using bias circuitry |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4415864A (en) * | 1980-02-25 | 1983-11-15 | U.S. Philips Corporation | Variable-gain amplifier stage equipped with field-effect transistors |
US20050195039A1 (en) * | 2003-06-06 | 2005-09-08 | Broadcom Corporation | Radio frequency variable gain amplifier with linearity insensitive to gain |
US7088187B1 (en) * | 2002-09-11 | 2006-08-08 | Marvell International Ltd. | Method and apparatus for an LNA with high linearity and improved gain control |
US20110285464A1 (en) * | 2010-05-18 | 2011-11-24 | Analog Devices Inc. | Apparatus and method for low noise amplification |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8242847B1 (en) * | 2009-08-05 | 2012-08-14 | Marvell International Ltd. | Method and apparatus for improving amplifier linearity |
-
2012
- 2012-01-10 US US13/346,921 patent/US8665027B2/en active Active
- 2012-12-17 TW TW101147897A patent/TWI508433B/zh active
- 2012-12-21 CN CN201210562682.6A patent/CN103199812B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4415864A (en) * | 1980-02-25 | 1983-11-15 | U.S. Philips Corporation | Variable-gain amplifier stage equipped with field-effect transistors |
US7088187B1 (en) * | 2002-09-11 | 2006-08-08 | Marvell International Ltd. | Method and apparatus for an LNA with high linearity and improved gain control |
US20050195039A1 (en) * | 2003-06-06 | 2005-09-08 | Broadcom Corporation | Radio frequency variable gain amplifier with linearity insensitive to gain |
US20110285464A1 (en) * | 2010-05-18 | 2011-11-24 | Analog Devices Inc. | Apparatus and method for low noise amplification |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112234944A (zh) * | 2020-09-14 | 2021-01-15 | 成都振芯科技股份有限公司 | 一种无电感宽带低噪声放大器 |
Also Published As
Publication number | Publication date |
---|---|
US8665027B2 (en) | 2014-03-04 |
TWI508433B (zh) | 2015-11-11 |
US20130176077A1 (en) | 2013-07-11 |
TW201330491A (zh) | 2013-07-16 |
CN103199812B (zh) | 2016-08-24 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201022 Address after: No. 1, Xingzhu Road, Hsinchu Science Park, Taiwan, China Patentee after: MEDIATEK Inc. Address before: 405, 4th floor, 1st District, Shenzhen Bay science and technology ecological park, Aohai street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: Mstar Semiconductor,Inc. Patentee before: MEDIATEK Inc. Effective date of registration: 20201022 Address after: 405, 4th floor, 1st District, Shenzhen Bay science and technology ecological park, Aohai street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Mstar Semiconductor,Inc. Patentee after: MEDIATEK Inc. Address before: 518057 Guangdong city of Shenzhen province Nanshan District Gao Xin Road China science and Technology Development Institute of Technology Park Building No. three tower 4-5 No. Patentee before: Mstar Semiconductor,Inc. Patentee before: MSTAR SEMICONDUCTOR Inc. |