CN103199434B - A kind of method realizing semiconductor laser coherent polarization synthesis - Google Patents
A kind of method realizing semiconductor laser coherent polarization synthesis Download PDFInfo
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- CN103199434B CN103199434B CN201310066584.8A CN201310066584A CN103199434B CN 103199434 B CN103199434 B CN 103199434B CN 201310066584 A CN201310066584 A CN 201310066584A CN 103199434 B CN103199434 B CN 103199434B
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Abstract
The present invention relates to the method realizing semiconductor laser coherent polarization synthesis, comprise the following steps: the seed light that main laser sends is divided into multichannel after Amici prism, inject respectively multiple from laser to realize from the PGC demodulation of laser; Each laser launched from laser, all launch from laser with another one or through polarized combination, through the laser of half-wave plate effect, in polarization coupling prism, carry out polarized combination.The method realizing semiconductor laser coherent polarization synthesis of the present invention, being used for the quantity of the laser participating in polarization coupling can the power of laser gross power as required and single laser determine; Two-way laser can only synthesize by common polarized combination, and the quantity of closing bundle, by modulating the phase place of laser, can expand to unlimited many, very flexibly by the present invention.
Description
Technical field
The present invention relates to semiconductor laser and close light source beam field, particularly a kind of method realizing semiconductor laser coherent polarization synthesis.
Background technology
Because semiconductor laser has, volume is little, lightweight, reliability is high, electro-optical efficiency advantages of higher, make its core light source not only becoming the fields such as laser processing, laser medicine, laser display, laser monitor, laser ranging, laser guidance, laser fuze and support technology, also obtain more and more noticeable application prospect in fields such as laser radar, laser gas detection, laser rangings.The application of semiconductor laser significantly reduces the complexity of machine system in these application, and increases substantially its reliability.But in the application such as laser radar, active probe identification, need the fine parameters (vibration, rotation, precession, nutating etc.) of measurement target, require that light source must be coherent light.And common high power semiconductor lasers runs on saturation mode usually, in multimode output, coherence is poor.The semiconductor laser that can realize single longitudinal mode running has good coherence, coherence length is longer, and (coherence length is the important indicator of coherent source, determine primarily of laser frequency live width), tens kilometers can be reached, but power output is in hundred milliwatt magnitudes, be difficult to meet the requirement to high-power output in above-mentioned application.
Semiconductor laser optics coherence tomography technology is the effective way obtaining high-power coherent source, typically refer to that by certain means, one group of laser cell makes that frequency is each other identical, polarization is consistent, phase place forms fixing association, thus makes overall light field present the phenomenon of coherent superposition.According to the scheme of the semiconductor laser optics coherence tomography reported at present, mainly contain following several form: (1) adopts evanescent wave, and between the unit such as leakage waves, self-organizing realizes optics coherence tomography.Mainly relying on the stripping pattern between unit (revealing ripple, evanescent wave etc.) to be formed in the waveguide adaptively stablizes phase-locked, thus realizes the optics coherence tomography of light beam between unit.This method depends on the frequency narrowness effect of waveguide and laserresonator coupled system and the selection locking action of phase place consumingly, stricter to the structural requirement of laser.(2) exocoel Phase Lock Technique is adopted to realize coherently combined.Exocoel is phase-locked mainly forms new resonant cavity outward at semiconductor laser array, fully coupling mutually between each luminescence unit is made by the reflex of diffraction effect and external cavity mirror, lock the phase place of each lasing fluorescence unit, thus make the relevant output of semiconductor laser.(3) adopt principal and subordinate's injection technique, realize optics coherence tomography.Principal and subordinate's injection technique is injected into common semiconductor laser array (from laser) using the semiconductor laser (main laser) of a low-power, narrow linewidth as seed source, under certain condition, from the free operation mode of laser suppressed and injection light frequency set up stable vibration, thus each unit and main laser same frequency in array are operated, reach phase-locked relevant object.Frequency spectrum due to each luminous point in (2) (3) is inconsistent, and make the frequency spectrum of the coherent laser of acquisition be compressed to single longitudinal mode, live width is wider.Because such scheme exists the shortcomings such as laser structure is special, complicated process of preparation, conjunction Shu Danyuan frequency spectrum are variant, cause optics coherence tomography light source to be difficult to meet the demands in spectrum zooming and power output two, this also becomes the major technology bottleneck of semiconductor laser in field application such as laser radar, active probe identification, laser gas detections simultaneously.
Summary of the invention
In spectrum zooming and power output two, being difficult to meet in order to solving existing semiconductor laser optics coherence tomography light source the present situation that application requires simultaneously, the invention provides a kind of method of semiconductor laser coherent polarization synthesis that can realize high power, narrow linewidth.
Technical scheme of the present invention is specific as follows:
Realize the method for semiconductor laser coherent polarization synthesis, comprise the following steps:
Step I: the seed light that main laser sends is divided into multichannel after Amici prism, inject respectively multiple from laser to realize from the PGC demodulation of laser; Each laser launched from laser, all launch from laser with another one or through polarized combination, through the laser of half-wave plate effect, in polarization coupling prism, carry out polarized combination;
Step I i: photodetector carries out Real-Time Monitoring to the synthesis light beam after polarized combination, then by signal transmission to phase control module; Described phase control module demodulates the phase error of two-beam, and control signal is fed back to phase-modulator thus phase-modulation is carried out to each light beam sent from laser, by participate in polarized combination two-way light beam phase-difference control π integral multiple and remain linearly polarized light, thus continue to carry out polarization coupling with next road light beam, realize cross polarization synthesis.
In technique scheme, all master and slave lasers are all fixing at grade.
In technique scheme, be also separately installed with before master and slave laser for reducing laser divergence angle, carrying out the collimating mirror that collimates.
In technique scheme, the seed light that described main laser sends is divided into after multichannel through Amici prism, injects multiple from laser by the effect of completely reflecting mirror and reflector plate; Described completely reflecting mirror be reflectivity close to 100% reflector plate or reflecting prism.
In technique scheme, the seed light that described main laser sends is divided into after multichannel through Amici prism, injects multiple from laser by the effect of completely reflecting mirror and reflector plate; Described reflector plate is the parallel flat with certain reflectivity, and reflectance value is from 1% to 50%.
In technique scheme, the described front facet from laser is coated with the anti-reflection film of reflectivity more than 99%, to ensure that seed light has high injection rate.
In technique scheme, the phase control module used comprises phase-control circuit, lock-in amplifier, signal generator.
In technique scheme, described phase-modulator is lithium niobate (LiNbO
3) phase-modulator.
In technique scheme, described multiple quantity from laser is 4.
The method realizing semiconductor laser coherent polarization synthesis of the present invention has following advantage:
The method realizing semiconductor laser coherent polarization synthesis of the present invention, optics coherence tomography and polarized combination combine with technique are got up, many single transverse mode semiconductor lasers are made to meet coherent condition by the mode of principal and subordinate's injection phase-locking, controlled by the phase place of active phase modulation to each road light beam, realized the optics coherence tomography of multichannel light beam by the method for polarization coupling, the coherent source of high power, narrow linewidth can be obtained.This technology does not have special construction requirement to laser self, can realize the optics coherence tomography of numerous unit in theory, is the very promising optics coherence tomography technology of one.
The method realizing semiconductor laser coherent polarization synthesis of the present invention, the quantity of laser can the power of laser gross power as required and single laser be determined; Two-way laser can only synthesize by common polarized combination, and the quantity of closing bundle laser, by modulating the phase place of laser, can expand to unlimited many, very flexibly by the present invention.
Accompanying drawing explanation
Fig. 1 is the application structural representation realizing the semiconductor laser light resource of the method for semiconductor laser coherent polarization synthesis of the present invention.
Embodiment
Invention thought of the present invention is: apply the semiconductor laser light resource realizing the method for semiconductor laser coherent polarization synthesis of the present invention, it comprises a single-frequency semiconductor laser as main laser, and multiple Same Wavelength and the identical single transverse mode semiconductor laser of structure are as from laser; All lasers are all fixed on same plane, and are flapped toward arrangement by figure.Be coated with anti-reflection film from laser front facet, transmitance is more than 99%.The light that all principal and subordinate's lasers send, by after collimating mirror, has the very little angle of divergence.The seed light that main laser sends repeatedly is divided into the seed light beam of multichannel Same Efficieney after light splitting through the Amici prism that light splitting rate is 50%, and is respectively injected many from laser thus the PGC demodulation realized from laser by completely reflecting mirror and reflector plate (reflectivity is 10%).The one-way transmission that optical isolator ensures seed light is added in the middle of principal and subordinate's laser.From laser by after PGC demodulation, launch the laser beam with main laser with same frequency, identical direction of vibration.Light beam after reflector plate 90% light beam transmission go out.By polarization coupling prism, polarized combination is carried out to two-way light beam, photodetector is used to carry out Real-Time Monitoring to synthesis light beam, by signal transmission to phase-control circuit, phase-control circuit demodulates the phase error of two-beam, and control signal is fed back to lithium niobate (LiNbO
3) phase-modulator thus phase-modulation is carried out to each light beam sent from laser, by participate in polarized combination two-way light beam phase-difference control π integral multiple and remain linearly polarized light, thus continue to carry out polarization coupling with next road light beam, obtain the semiconductor laser light resource based on cross polarization synthetic technology, realize the method for semiconductor laser coherent polarization synthesis.
The embodiment provided below in conjunction with accompanying drawing is described in further detail the present invention.
Fig. 1 shows a kind of embodiment realizing the method for semiconductor laser coherent polarization synthesis of the present invention.With reference to Fig. 1, apply the semiconductor laser light resource of method realizing semiconductor laser coherent polarization synthesis of the present invention, comprise Amici prism 5, completely reflecting mirror 6, reflector plate 7, phase control module 8, phase-modulator 9, photodetector 10, polarization coupling prism 11, half-wave plate 12 that main laser 1,4 from laser 2, collimating mirror 3, optical isolator 4, light splitting rate is 50%.Wherein all lasers are all fixed in same plane.Apply the phase control module 8 realizing using in the semiconductor laser light resource of the method for semiconductor laser coherent polarization synthesis of the present invention and comprise phase-control circuit, lock-in amplifier, signal generator, phase-modulator uses the lithium niobate phase modulator that can be used in free light path.
Apply of the present invention realize semiconductor laser coherent polarization synthesis method semiconductor laser light resource in, by the accurate adjustment rack of six axles and ultraviolet glue, in face of chamber collimating mirror 3 being installed to each laser, laser beam is collimated, collimating mirror also can be supported by mechanical microscope base, by ultraviolet glue, collimating mirror and mechanical microscope base is carried out gummed and fixes.Debug in process at collimating mirror, need to check that whether the far-field spot position of all lasers is in the horizontal direction in sustained height.
Apply of the present invention realization in the semiconductor laser light resource of the method for semiconductor laser coherent polarization synthesis, Amici prism 5 is that the inclined-plane of triangular prism is carried out plating spectro-film, is then formed by the inclined-plane of two triangular prisms gummed.Completely reflecting mirror 6 is coated with highly reflecting films on surface, and reflector plate is simultaneously being coated with the spectro-film of reflectivity 10%, and another surface is coated with anti-reflection film, and the base material of all optical elements is and melts quartz.Clamp optical element adjustment by six-axial adjustment frame and suitable fixture, make it play light splitting and reflex to light beam, reach designing requirement, adjust rear ultraviolet glue or mechanical means is fixed.
Apply the method realizing semiconductor laser coherent polarization synthesis of the present invention when carrying out polarization coupling, the light that all lasers send collimates through collimating mirror 3, the seed light that main laser 1 sends is divided into four tunnels after Amici prism 5, injects four respectively from laser thus the PGC demodulation realized from laser by the effect of completely reflecting mirror 6 and reflector plate 7, launching and the light beam of main laser same frequency from laser after PGC demodulation, by transmission after reflector plate, light beam after transmission carries out carrying out polarized combination by polarization coupling prism 11 successively, half-wave plate 12 is for adjusting the polarization direction of light beam, photodetector 10 is used to carry out Real-Time Monitoring to synthesis light beam, by signal transmission to phase control module 8, phase control module demodulates the phase error of two-beam, and by phase-modulator 9, phase-modulation is carried out to each road light beam, by participate in polarized combination two-way light beam phase-difference control π integral multiple and remain linearly polarized light, thus continue to carry out polarization coupling with next road light beam, realize cross polarization synthesis.
Specifically:
First, first laser sent from laser 2 of the top, again through the effect of first half-wave plate 12 after first phase-modulator 9, after speculum reflection, incide in first polarization coupling prism 11, carry out polarization coupling with the laser sent from laser 2 by second.
Then, through the laser of polarization coupling after the effect of second half-wave plate 12, incide in second polarization coupling prism 11, carry out polarization coupling with the laser sent from laser 2 by the 3rd.
Finally, through the laser of polarization coupling after the effect of the 3rd half-wave plate 12, incide in the 3rd polarization coupling prism 11, carry out polarization coupling with the laser sent from laser 2 by the 4th.
Each laser sent from laser 2, all carried out phase-modulation through phase-modulator 9 before carrying out polarization coupling.
In other embodiment, the quantity from laser being used for carrying out polarization coupling can also be two or 5,6 or more, closes Shu Yuanli and closes bundle process all identical with above-mentioned embodiment, repeat no more here.
The method realizing semiconductor laser coherent polarization synthesis of the present invention, optics coherence tomography and polarized combination combine with technique are got up, many single transverse mode semiconductor lasers are made to meet coherent condition by the mode of principal and subordinate's injection phase-locking, controlled by the phase place of active phase modulation to each road light beam, realized the optics coherence tomography of multichannel light beam by the method for polarization coupling, the coherent source of high power, narrow linewidth can be obtained.This technology does not have special construction requirement to laser self, can realize the optics coherence tomography of numerous unit in theory, is the very promising optics coherence tomography technology of one.
The method realizing semiconductor laser coherent polarization synthesis of the present invention, the quantity of laser can the power of laser gross power as required and single laser be determined; Two-way laser can only synthesize by common polarized combination, and the quantity of closing bundle laser, by modulating the phase place of laser, can expand to unlimited many, very flexibly by the present invention.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among the protection range of the invention.
Claims (9)
1. realize the method for semiconductor laser coherent polarization synthesis, it is characterized in that, comprise the following steps:
Step I: the seed light that main laser (1) sends is divided into multichannel after Amici prism (5), inject respectively multiple from laser (2) to realize the PGC demodulation from laser (2); First laser sent from laser (2), again through the effect of first half-wave plate (12) after first phase-modulator (9), after speculum reflection, incide in first polarization coupling prism (11), carry out polarization coupling with the laser sent from laser (2) by second; Through the laser of polarization coupling after the effect of second half-wave plate (12), incide in second polarization coupling prism (11), carry out polarization coupling with the laser sent from laser (2) by the 3rd; By that analogy, until each laser launched from laser (2), that all launch from laser (2) with another one or through polarized combination, through the laser that half-wave plate (12) acts on, in polarization coupling prism (11), carry out polarized combination;
Step I i: photodetector (10) carries out Real-Time Monitoring to the synthesis light beam after polarized combination, then by signal transmission to phase control module (8); Described phase control module (8) demodulates the phase error of two-beam, and control signal is fed back to phase-modulator (9) thus phase-modulation is carried out to each light beam sent from laser (2), by participate in polarized combination two-way light beam phase-difference control π integral multiple and remain linearly polarized light, thus continue to carry out polarization coupling with next road light beam, realize cross polarization synthesis.
2. method according to claim 1, is characterized in that, all master and slave lasers are all fixing at grade.
3. method according to claim 1, is characterized in that, is also separately installed with for reducing laser divergence angle, carrying out the collimating mirror (3) that collimates before master and slave laser.
4. method according to claim 1, it is characterized in that, the seed light that described main laser (1) sends, after Amici prism (5) is divided into multichannel, is injected multiple from laser (2) by the effect of completely reflecting mirror (6) and reflector plate (7); Described completely reflecting mirror (6) for reflectivity close to 100% reflector plate or reflecting prism.
5. method according to claim 1, it is characterized in that, the seed light that described main laser (1) sends, after Amici prism (5) is divided into multichannel, is injected multiple from laser (2) by the effect of completely reflecting mirror (6) and reflector plate (7); Described reflector plate (7) is for having the parallel flat of certain reflectivity, and reflectance value is from 1% to 50%.
6. method according to claim 1, is characterized in that, the described front facet from laser (2) is coated with the anti-reflection film of reflectivity more than 99%, to ensure that seed light has high injection rate.
7. method according to claim 1, is characterized in that, the phase control module (8) used comprises phase-control circuit, lock-in amplifier, signal generator.
8. method according to claim 1, is characterized in that, described phase-modulator (9) is lithium niobate (LiNbO
3) phase-modulator.
9. according to the method described in claim 1-8 any one, it is characterized in that, described multiple quantity from laser (2) is 4.
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| CN108808436A (en) * | 2018-06-20 | 2018-11-13 | 中国工程物理研究院应用电子学研究所 | A kind of multiple beam based on tablet bundling device is total to aperture coherence synthesizing device |
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| CN105486483B (en) * | 2016-01-11 | 2017-11-10 | 北京中科思远光电科技有限公司 | Multi-pulse laser beam combining method based on space-time multiplexing technology |
| JP6333874B2 (en) * | 2016-03-03 | 2018-05-30 | 株式会社フジクラ | Light guide device, light guide method, and LD module |
| CN107748057B (en) * | 2017-10-30 | 2019-04-30 | 中国人民解放军国防科技大学 | System and method for evaluating influence of thermal lens effect on synthesis efficiency of coherent polarization synthesis system |
| CN109212772A (en) * | 2018-10-19 | 2019-01-15 | 中国航空制造技术研究院 | A kind of laser coherence polarized combination method and its system |
| CN113310670B (en) * | 2021-06-03 | 2022-10-11 | 中国科学院空天信息创新研究院 | Laser polarization beam combination measuring device |
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| JP3185831B2 (en) * | 1993-07-30 | 2001-07-11 | 富士写真フイルム株式会社 | Polarization coherent multiplex laser |
| KR101190862B1 (en) * | 2008-12-18 | 2012-10-15 | 한국전자통신연구원 | Single longitudinal mode laser based seed light module for wdm-pon |
| DE102010052950B4 (en) * | 2010-08-31 | 2020-11-05 | Friedrich-Schiller-Universität Jena | Optical amplifier arrangement |
| CN202749679U (en) * | 2012-07-30 | 2013-02-20 | 中国人民解放军国防科学技术大学 | Multi-chain slat laser coherent control common aperture polarization synthesis device |
| CN102801106B (en) * | 2012-07-30 | 2014-05-28 | 中国人民解放军国防科学技术大学 | Multi-chain lath laser coherence control common-aperture polarization synthesis method |
| CN202748569U (en) * | 2012-08-16 | 2013-02-20 | 尤洁 | Full electro-optic switch based on coherent polarization combination |
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