CN103197443A - Straight waveguide phase modulator - Google Patents
Straight waveguide phase modulator Download PDFInfo
- Publication number
- CN103197443A CN103197443A CN2013101446871A CN201310144687A CN103197443A CN 103197443 A CN103197443 A CN 103197443A CN 2013101446871 A CN2013101446871 A CN 2013101446871A CN 201310144687 A CN201310144687 A CN 201310144687A CN 103197443 A CN103197443 A CN 103197443A
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- China
- Prior art keywords
- lithium niobate
- waveguide
- phase modulator
- phase
- polarizing
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 53
- 238000010168 coupling process Methods 0.000 claims abstract description 20
- 230000008878 coupling Effects 0.000 claims abstract description 11
- 238000005859 coupling reaction Methods 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000010287 polarization Effects 0.000 abstract description 14
- 239000013307 optical fiber Substances 0.000 abstract description 13
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000005520 cutting process Methods 0.000 description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 6
- 229910052744 lithium Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000835 fiber Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012467 final product Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
A straight waveguide phase modulator comprises a titanium-diffused lithium niobate phase modulator. The straight waveguide phase modulator is characterized in that the end face of the input end of the titanium-diffused lithium niobate phase modulator is adhered with the end face of a lithium niobate polarizer chip in a coupling manner; the lithium niobate polarizer chip comprises a lithium niobate wafer and a polarizing waveguide formed on the surface of the lithium niobate wafer; a first waveguide surface is formed on the surface of a structure of the polarizing waveguide, and a 45-degree included angle is formed between the polarizing angle of the polarizing waveguide to input light and the first waveguide surface; a second waveguide surface is formed on the surface of a structure of a phase modulation waveguide; and the first waveguide surface is flush with the second waveguide surface. The straight waveguide phase modulator has the advantages that a polarizing device and a phase modulation device are integrated, so that the size of the straight waveguide phase modulator is greatly reduced, complexity of coupling technique is reduced, and production and processing efficiency is improved. Since polarization maintaining optical fiber connection between the polarizing device and the phase modulation device is omitted, degree of polarization is greatly increased (larger than 80 decibels), and meanwhile, system reliability is improved.
Description
Technical field
The present invention relates to a kind of phase-modulator, relate in particular to a kind of straight wave guide phase-modulator.
Background technology
Used for reference the optical fiber current mutual inductor (FOCT) of optical fibre gyro Photoelectric Signal Processing technology, the digital closed loop feedback system that constructs by high speed signal processing unit and electro-optic phase modulator, can measure the nonreciprocity phase shift information that is caused by the magnetic field Faraday effect in the light wave loop in real time, and then obtain foreign current information, this makes FOCT have the advantage that measurement range is wide, dynamic perfromance is good, problems such as the magnetic hysteresis that has solved traditional electromagnetic current transducer existence is saturated, wave form distortion have adapted to the demand of modern power systems to the current measurement value reliability.
Fig. 2 is a kind of composition structural representation of typical optical fiber current mutual inductor, and the essence of this structure is to utilize the principle of the 2 bundle interference of light to measure electric current.By schematic diagram as can be seen, optical fiber current mutual inductor mainly is made up of light source, photodetector (PIN among Fig. 2), polarization-maintaining fiber coupler, the line polarisation polarizer, first polarization maintaining optical fibre, straight wave guide phase-modulator (being titanium diffusion lithium niobate phase modulator), second polarization maintaining optical fibre, λ/4 wave plates, sensor fibre ring and reflective mirror; Wherein, relevant with problem solved by the invention has: 1) the line polarisation polarizer and straight wave guide phase-modulator are split-type structural, the device cumulative volume is bigger, 2) connect by first polarization maintaining optical fibre between the line polarisation polarizer and the straight wave guide phase-modulator, under the prior art condition, the polarization retention of 2 meters long polarization maintaining optical fibres only is 35dB, and the polarization retention of polarization maintaining optical fibre also can continue along with the increase of length to descend, this just cause finally entering the straight wave guide phase-modulator the line polarisation play the degree of bias less than 35dB, be unfavorable for that very follow-up signal handles.
Nearest studies show that, the lithium niobate fiber waveguide that adopts annealing proton exchange processes to go out, its polarization extinction ratio can reach more than the 80dB, this lithium niobate fiber waveguide can be obtained the line polarisation of high-polarization as the polarizer (being lithium niobate polarizer chip), itself and the direct end face of titanium diffusion lithium niobate phase modulator are coupled, can make the line polarisation of high-polarization under the loss-free situation of degree of polarization, directly inject titanium diffusion lithium niobate phase modulator, thereby save the polarization maintaining optical fibre between deflection device and the phasing device; But in actual applications, owing to need adjust the polarizing angle degree of lithium niobate polarizer chip, just need in coupling technique, regulate the coupling angle of titanium diffusion lithium niobate phase modulator and lithium niobate polarizer chip, owing to need in the coupling technique coupling mass of titanium diffusion lithium niobate phase modulator and lithium niobate polarizer chip is monitored in real time, therefore coupling technique needs manually-operated to carry out, operating personnel should monitor the effect of coupling and again the coupling angle be regulated in operating process, this just causes the complexity of coupling technique significantly to improve, and working (machining) efficiency obviously descends.
Summary of the invention
At the problem in the background technology, the present invention proposes a kind of straight wave guide phase-modulator, comprise titanium diffusion lithium niobate phase modulator, input end end face and the lithium niobate polarizer chip end face coupling of described titanium diffusion lithium niobate phase modulator are bonding; The partial wave that described lithium niobate polarizer chip is formed on its surface by lithium niobate crystal chip and employing proton exchange annealing process is led and is formed, described partial wave led structure surface formation first waveguide surface at place, play polarizing angle degree and first waveguide surface that partial wave leads input light and be 45 ° of angles, the structure surface that phase-modulated wave on the titanium diffusion lithium niobate phase modulator is led the place forms second waveguide surface, and first waveguide surface and second waveguide surface flush.
Principle of the present invention is: when making lithium niobate polarizer chip, polarizing angle degree and first waveguide surface that a partial wave on the lithium niobate polarizer chip is led are 45 ° of angles, thereby save in coupling technique the adjusting operation to the polarizing angle degree, simplify the complexity of coupling technique greatly, improve the working (machining) efficiency of coupling operation; Lithium niobate polarizer chip of the present invention is to obtain like this:
The technology of conventional processing lithium niobate polarizer chip is: 1) lithium columbate crystal is carried out cutting perpendicular to X-axis or perpendicular to the crystal orientation of Z axle, obtain lithium niobate crystal chip, 2) grinding and polishing is carried out on the lithium niobate crystal chip surface, 3) adopt the proton exchange annealing process, process waveguide at lithium niobate crystal chip, obtain lithium niobate polarizer chip;
Because in the commercial production, usually its cut surface is general all perpendicular to a certain crystal orientation of crystal when cutting, and Qie Ge benefit can also reduce processing and consume except simplifying the cutting technique like this, save materials, this just makes those skilled in the art form certain mindset; But the inventor finds that in the step 1), when lithium columbate crystal was cut, if carry out inclined cut, even cut surface is parallel with the Y direction of lithium columbate crystal, the Z-direction of cut surface and lithium columbate crystal formed an angle simultaneously
, 0 °<
<90 ° (as shown in Figure 4), adopt step 2 then), 3) in technology, process waveguiding structure (namely playing partial wave leads) at lithium niobate crystal chip, the final lithium niobate polarizer chip that obtains will exist with waveguide surface (i.e. first waveguide surface) the polarizing angle degree of input light
The angle of angle, in the follow-up coupling technique, only needing assurance first waveguide surface to flush with second waveguide surface gets final product, need not regulate the coupling angle, this has just reduced the complexity of coupling operation greatly, simultaneously again, because the cutting operation of lithium columbate crystal is undertaken by Fully-mechanized equipment, the angle that only needs to regulate cutting knife gets final product, and is therefore, very little to the influence that cutting technique causes.
Useful technique effect of the present invention is: deflection device and phasing device are become one, greatly reduced device volume, reduced the complexity of coupling technique, improved production and processing efficient.Be connected with polarization maintaining optical fibre between the phasing device owing to saved a deflection device, degree of polarization improves (greater than 80dB) greatly, improved system reliability simultaneously.
Description of drawings
Fig. 1, structural representation of the present invention;
Fig. 2, existing optical fiber current mutual inductor structural representation;
Fig. 3, existing lithium niobate crystal chip cutting mode synoptic diagram;
The lithium niobate crystal chip cutting mode synoptic diagram that Fig. 4, lithium niobate polarizer chip of the present invention adopt;
Structural representation after the lithium niobate crystal chip polishing among Fig. 5, Fig. 4;
Parts shown in each mark are respectively among the figure: titanium diffusion lithium niobate phase modulator 1, lithium niobate polarizer chip 2, lithium niobate crystal chip 3, play that a partial wave leads 4, phase-modulated wave leads 5, optical fiber component 6, incisory lithium columbate crystal A.
Embodiment
A kind of straight wave guide phase-modulator comprises titanium diffusion lithium niobate phase modulator 1, and input end end face and the coupling of a lithium niobate polarizer chip 2 end faces of described titanium diffusion lithium niobate phase modulator 1 are bonding; The partial wave that described lithium niobate polarizer chip 2 is formed on its surface by lithium niobate crystal chip 3 and employing proton exchange annealing process is led 4 and is formed, described partial wave led structure surface formation first waveguide surface at 4 places, playing partial wave leads polarizing angle degree and first waveguide surfaces of 4 pairs of input light and is 45 ° of angles, the structure surface that phase-modulated wave on the titanium diffusion lithium niobate phase modulator 1 is led 5 places forms second waveguide surface, and first waveguide surface and second waveguide surface flush.
Claims (1)
1. a straight wave guide phase-modulator comprises titanium diffusion lithium niobate phase modulator (1), and it is characterized in that: the input end end face of described titanium diffusion lithium niobate phase modulator (1) and lithium niobate polarizer chip (2) end face coupling are bonding; The partial wave that described lithium niobate polarizer chip (2) is formed on lithium niobate crystal chip (3) surface by lithium niobate crystal chip (3) and employing proton exchange annealing process is led (4) and is formed, described partial wave led structure surface formation first waveguide surface at (4) place, playing partial wave leads (4) polarizing angle degree and first waveguide surface of input light is 45 ° of angles, the structure surface that phase-modulated wave on the titanium diffusion lithium niobate phase modulator (1) is led (5) place forms second waveguide surface, and first waveguide surface and second waveguide surface flush.
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CN201310144687.1A CN103197443B (en) | 2013-04-24 | 2013-04-24 | straight waveguide phase modulator |
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CN201310144687.1A CN103197443B (en) | 2013-04-24 | 2013-04-24 | straight waveguide phase modulator |
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CN103197443B CN103197443B (en) | 2015-09-02 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103676219A (en) * | 2013-12-20 | 2014-03-26 | 北京航天时代光电科技有限公司 | Low polarization dependent loss lithium niobate straight-bar waveguide phase modulator and manufacturing method thereof |
WO2017120717A1 (en) * | 2016-01-11 | 2017-07-20 | 中国科学院国家授时中心 | Electro-optic phase modulation system |
CN107219646A (en) * | 2017-06-05 | 2017-09-29 | 西安交通大学 | A kind of high-performance straight wave guide type electro-optic phase modulator and preparation method thereof |
CN108761640A (en) * | 2018-06-12 | 2018-11-06 | 黑龙江工业学院 | A kind of high polarization extinction ratio waveguide polarizer and its manufacturing method of fiber coupling |
CN111106932A (en) * | 2018-10-26 | 2020-05-05 | 科大国盾量子技术股份有限公司 | Polarization control system and method based on straight waveguide modulator and quantum key distribution system |
CN112578581A (en) * | 2020-12-11 | 2021-03-30 | 上海交通大学 | Electro-optic polarization modulator based on lithium niobate Y waveguide integrated optical device |
CN113031317A (en) * | 2021-03-26 | 2021-06-25 | 武汉光迅科技股份有限公司 | Miniaturized high extinction ratio modulation device and use method thereof |
CN116088080A (en) * | 2023-04-07 | 2023-05-09 | 欧梯恩智能科技(苏州)有限公司 | Light intensity modulation chip, manufacturing method thereof, optical sensor and positioning system |
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2013
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US5103494A (en) * | 1989-07-18 | 1992-04-07 | Alcatel N.V. | Optoelectronic arrangement |
JPH06308439A (en) * | 1993-04-20 | 1994-11-04 | Sumitomo Metal Mining Co Ltd | Polarization modulating device and polarization modulating method |
CN1687794A (en) * | 2005-06-13 | 2005-10-26 | 北京航空航天大学 | Optical fibre current transformer and its on line temp measuring method |
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Non-Patent Citations (1)
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103676219A (en) * | 2013-12-20 | 2014-03-26 | 北京航天时代光电科技有限公司 | Low polarization dependent loss lithium niobate straight-bar waveguide phase modulator and manufacturing method thereof |
CN103676219B (en) * | 2013-12-20 | 2017-01-25 | 北京航天时代光电科技有限公司 | Low polarization dependent loss lithium niobate straight-bar waveguide phase modulator and manufacturing method thereof |
WO2017120717A1 (en) * | 2016-01-11 | 2017-07-20 | 中国科学院国家授时中心 | Electro-optic phase modulation system |
CN107219646A (en) * | 2017-06-05 | 2017-09-29 | 西安交通大学 | A kind of high-performance straight wave guide type electro-optic phase modulator and preparation method thereof |
CN107219646B (en) * | 2017-06-05 | 2019-07-23 | 西安交通大学 | A kind of straight wave guide type electro-optic phase modulator and preparation method thereof |
CN108761640A (en) * | 2018-06-12 | 2018-11-06 | 黑龙江工业学院 | A kind of high polarization extinction ratio waveguide polarizer and its manufacturing method of fiber coupling |
CN111106932A (en) * | 2018-10-26 | 2020-05-05 | 科大国盾量子技术股份有限公司 | Polarization control system and method based on straight waveguide modulator and quantum key distribution system |
CN111106932B (en) * | 2018-10-26 | 2021-07-09 | 科大国盾量子技术股份有限公司 | Polarization control system and method based on straight waveguide modulator and quantum key distribution system |
CN112578581A (en) * | 2020-12-11 | 2021-03-30 | 上海交通大学 | Electro-optic polarization modulator based on lithium niobate Y waveguide integrated optical device |
CN113031317A (en) * | 2021-03-26 | 2021-06-25 | 武汉光迅科技股份有限公司 | Miniaturized high extinction ratio modulation device and use method thereof |
CN116088080A (en) * | 2023-04-07 | 2023-05-09 | 欧梯恩智能科技(苏州)有限公司 | Light intensity modulation chip, manufacturing method thereof, optical sensor and positioning system |
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Effective date of registration: 20231216 Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee after: CETC Chip Technology (Group) Co.,Ltd. Address before: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road 44 Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.44 Research Institute |
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