CN103196718A - Preparation method of TEM (transverse electric and magnetic field) sample - Google Patents
Preparation method of TEM (transverse electric and magnetic field) sample Download PDFInfo
- Publication number
- CN103196718A CN103196718A CN2013100820839A CN201310082083A CN103196718A CN 103196718 A CN103196718 A CN 103196718A CN 2013100820839 A CN2013100820839 A CN 2013100820839A CN 201310082083 A CN201310082083 A CN 201310082083A CN 103196718 A CN103196718 A CN 103196718A
- Authority
- CN
- China
- Prior art keywords
- coating
- sample
- xsect
- tem
- tem sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Sampling And Sample Adjustment (AREA)
Abstract
The invention relates to the field of the manufacture of a semiconductor, and in particular relates to a preparation method of a TEM (transverse electric and magnetic field) sample. The preparation method comprises the following steps of: S1, depositing a first coating layer on the upper surface of a substrate; S2, cutting the first coating layer to the lower surface of the substrate; S3, preparing a second coating layer to cover the surface of a first cross section; S4, cutting the remaining first coating layer on a first sample structure to the lower surface of the remained substrate; S5, cutting the second coating layer to the lower surface of the remained substrate to form a TEM sample structure with a second cross section; and S6, continuously analyzing the target cross section of the TEM sample. According to the preparation method, a protection layer depositing method is improved, and the protection layer depositing time is increased, so that the thickness of the TEM sample can meet an optimal analysis thickness (40-60nm), a diffusion impervious layer and a copper interface can be clearly analyzed in the process of analysis, and the analysis quality of the TEM sample can be improved.
Description
Technical field
The present invention relates to field of semiconductor fabrication, more precisely, relate to a kind of preparation method of TEM sample.
Background technology
Continuous progress along with semiconductor technology, the size of sample becomes more and more littler, therefore need to carry out the material analysis of copper seed crystal structure in some technology, the focused ion beam system that the research of this class formation and material is also more and more needed to have the Precision Machining ability carries out the preparation work of TEM sample.
Present traditional use FIB(Focused Ion beam, focused ion beam) carries out TEM(Transmission electron microscope, transmission electron microscope) method of specimen preparation is directly to deposit one deck coating earlier on the structure of copper seed crystal, uses as tem analysis observation with the wide object section of the about 10um of FIB preparation then.But this preparation method is only applicable to the bigger target surface of semiconductor technology size, for the smaller copper seed crystal structure of present size, as 40nm, it is 40nm-60nm that reduced size semiconductor technologies such as 55nm need the TEM sample thickness, could differentiate the interface of copper (copper) and diffusion impervious layer (barrier) like this.But the limit for preparing the TEM thickness of sample with traditional method is 80nm-100nm, in TEM sample analysis process, can't differentiate the interface of copper (copper) and diffusion impervious layer (barrier), if the TEM thickness of sample is lower than 80nm simultaneously, the sample for preparing will produce bending or distortion, can't carry out the TEM sample analysis, and then influence subsequent technique.
(publication number: CN102401758A) disclose a kind of TEM sample manufacture method, described method comprises Chinese patent: obtain TEM sample thin slice by the focused ion beam cutting crystal wafer, heat described TEM sample thin slice and make the TEM sample that is fit to observation.The TEM sample thin slice that the present invention obtains by the cutting of heating focused ion beam, thereby be crystalline state with the amorphous portion of TEM sample thin slice both sides crystallization again, make the sample for use in transmitted electron microscope that makes by transmission electron microscope observation can see image orderly, that can reflect the specimen material crystalline phase.
The TEM sample thin slice that this invention obtains by the cutting of heating focused ion beam, thereby be crystalline state with the amorphous portion of TEM sample thin slice both sides crystallization again, make and observe the sample for use in transmitted electron microscope that makes to see image orderly, that can reflect the specimen material crystalline phase by transmission electron microscope, but this invention is only applicable to larger-size semiconductor devices, bending or distortion may be produced if be applied in the sample that the semiconductor devices of reduced size prepares, the TEM sample analysis can't be carried out.
Chinese patent (publication number: CN102466579A) provide a kind of preparation method of TEM sample, comprised step: the detection print is provided, has at least two zones to be detected on the described detection print, be i.e. first zone to be detected and second zone to be detected; Form mark in first zone to be detected of detecting print; Cut out first print from described first zone to be detected, described first print comprises described mark, cuts out second print from described second zone to be detected, and the shape of described second print is identical with the shape of first print; It is bonding that the one side with zone to be detected of described first print and second print is fitted, and forms two prints; Along described pair of print of two opposite flank attenuates that is cut of described pair of print, up to the described mark of exposure, thereby make and to carry out tem analysis to any zone of detecting print.
But this invention just will detect two zones to be detected of print and cut out two prints respectively and be sticked together, Zhi Bei TEM thinner thickness if desired, the TEM sample of preparing is easy to generate bending and distortion, influence follow-up technology, as seen, this invention is also also inapplicable in the less semiconductor technology of some sizes.
Summary of the invention
The present invention provides a kind of preparation method with TEM sample of copper seed crystal structure according to the deficiencies in the prior art, by the number of times that increases the oily material deposited coatings and the method for improving the TEM specimen preparation, in the copper seed crystal structure, fill enough coating materials, can avoid the formation in cavity, make the limit of the TEM thickness of sample of preparing the preparation of TEM sample thickness breakthrough classic method to reach optimum thickness (40-60nm), in the TEM sample analysis, can clearly distinguish the interphase of diffusion impervious layer and copper, the TEM sample also is not easy to produce crooked or distortion in preparation process simultaneously, improved the quality of TEM sample, the TEM sample be can prepare at the semiconductor devices of reduced size, production technology and my analytical effect improved.
The technical solution used in the present invention is:
A kind of preparation method of TEM sample is applied to have on the substrate of copper seed crystal structure, and described copper seed crystal structure comprises a plurality of grooves, wherein, may further comprise the steps:
Step S1, deposit first coating in the upper surface of described substrate, and this first coating is full of described groove;
Step S2, described first coating of cutting be the lower surface of described substrate extremely, forms first sample structure with first xsect;
Step S3, preparation second coating cover the surface of described first xsect;
Remaining first coating form second sample structure with object cross section, and this second sample structure comprises first xsect that is coated with second coating to the lower surface of remaining substrate on step S4, described first sample structure of cutting;
Step S5, described second coating of cutting form the TEM sample structure with second xsect and described object cross section to the lower surface of second coating that is positioned at described first cross-sectional surface;
Step S6, continuation are analyzed the object cross section of described TEM sample;
Wherein, the distance between described object cross section and described first xsect is 40-60nm;
The distance of described object cross section and second xsect is less than 100nm.
Above-mentioned a kind of method for preparing the TEM sample, wherein, the material of described first coating and described second coating is oily material.
Above-mentioned a kind of method for preparing the TEM sample wherein, adopt focused ion beam to carry out the operation of described cutting, and the direction of described cutting is parallel with the sidewall direction of described groove.
Above-mentioned a kind of method for preparing the TEM sample, wherein, with sample Rotate 180 degree or after adjusting the position of cutting, remaining first coating forms second sample structure with object cross section to the lower surface of remaining substrate on described first sample structure of continuation cutting among the step S4.
Above-mentioned a kind of method for preparing the TEM sample, wherein, described copper seed crystal structure also comprises diffusion impervious layer and copper seed layer, described groove is arranged in described substrate, and described restraining barrier covers bottom and the sidewall thereof of described groove, described copper seed layer covers the surface on described restraining barrier, and described first coating covers the surface of described copper seed layer and is full of described groove.
Above-mentioned a kind of method for preparing the TEM sample, wherein, described first sample structure comprises partially filled first coating to described groove at least.
Above-mentioned a kind of method for preparing the TEM sample, wherein, described TEM sample also comprises remaining second coating and first xsect, and described remaining second coating covers described first xsect, and described object cross section and described first xsect, second transverse cross-section parallel.
Above-mentioned a kind of method for preparing the TEM sample, wherein, the distance between the object cross section of described TEM sample and described second xsect is less than 100nm.
In sum, because the present invention has adopted above preparation scheme, by increasing with the number of times of oily material deposited coatings and the method for improvement TEM specimen preparation, make and in the copper seed crystal structure, also can fill enough oily materials, the sample of avoiding preparing has empty formation, make sample have better physical hardness simultaneously, make the thickness of sample of preparation break through the limit of TEM thickness of sample to reach optimum thickness, guaranteed that the TEM sample should not produce bending or distortion in preparation process, in analysis, also can clearly tell simultaneously the interphase of diffusion impervious layer and copper, improve the analysis quality of the TEM sample of copper seed crystal structure.
Description of drawings
Fig. 1 Fig. 1 is the vertical view with substrate of copper seed crystal structure;
Fig. 2 is the front elevation with substrate of copper seed crystal structure;
Fig. 3 is the front view of deposition first coating in the embodiment of the invention;
Fig. 4 is the side view of deposition first coating in the embodiment of the invention;
Fig. 5 is the side view behind cutting formation first xsect in the embodiment of the invention;
Fig. 6 is the side view after deposition second coating in the embodiment of the invention;
Fig. 7 is the side view after the cutting formation object section in the embodiment of the invention;
Fig. 8 is for finally finishing figure in the embodiment of the invention.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments, but not as restriction of the present invention.
The process flow diagram of the method for the TEM sample that Fig. 1-8 prepares the copper seed crystal structure for the present invention is a kind of, shown in Fig. 1-8, a kind of method for preparing the TEM sample of copper seed crystal structure specifically may further comprise the steps:
Step S1, provide a substrate 1 with copper seed crystal structure, groove is arranged in substrate 1, the copper seed crystal structure comprises diffusion impervious layer 2 and copper seed layer 3, and bottom and the sidewall thereof of restraining barrier 2 covering grooves, the surface of copper seed layer 3 covering barrier layer 2, structure as depicted in figs. 1 and 2, wherein, Fig. 1 is the vertical view with substrate of copper seed crystal structure, and Fig. 2 is the front elevation with substrate of copper seed crystal structure.
Step S2, deposit first coating 4 in the upper surface of substrate 1, and this first coating 4 is full of groove.In an embodiment of the present invention, select for use oily material to deposit as first coating 4, after finishing, this step forms structure shown in Fig. 3-4, wherein Fig. 3 deposits front elevation after first coating for the present invention, Fig. 4 as can be seen, has diffusion impervious layer 2, copper seed layer 3 and oily material coating 4 from bottom to top successively for the present invention deposits side view after first coating in the groove, and this oily material coating 4 is filled up groove, and the upper surface of substrate 1 is also covered by oily material layer 4 simultaneously.
Step S3, use focused ion beam are cut first coating 4 to the lower surface of substrate 1, formation has first sample structure of first xsect 6, this first sample structure remain first coating 4 ', residual copper inculating crystal layer 3 ', the residue diffusion impervious layer 2 ' and the residue substrate 1 ', xsect 6 is positioned at the side in the first sample structure territory, forms structure shown in Figure 5 after this step is finished.
Step S4, form one deck second coating 5 in the surface of first xsect 6 of first sample structure, in an embodiment of the present invention, the same oily material that adopts is as second coating 5, after finishing, this step forms structure shown in Figure 6, as shown in the figure, formed second layer oily material layer 5 on first xsect, 6 surfaces of first sample structure.
Step S5, with the first sample structure Rotate 180 ° or adjust the ion beam cutting position and use focused ion beam to cut at the reverse side of first xsect 6, namely cut remaining first coating 4 on first sample structure ' to remaining substrate 1 ' lower surface, formation has second sample structure of object cross section 7, second sample structure comprises remaining first coating 4 ", extraneous copper inculating crystal layer 3 ", remaining diffusion impervious layer 2 " and remaining substrate 1 ", object cross section 7 is positioned at a side of second sample structure, and parallels with first xsect 7.Guarantee that in cutting process the object cross section 7 of cutting formation and the distance of first xsect 6 are 40-60nm, as 40nm, 50nm, 60nm etc.Wherein, if in cutting process, if cut the distance of back xsect and first xsect 6 greater than 60nm through focused ion beam, then continue to use focused ion beam to close on this xsect and proceed cutting technique, until the xsect of last formation and the distance between first xsect 6 during between 40-60nm, just stop cutting, form structure shown in Figure 7 after the feasible last xsect that forms is finished as this step of object cross section.
Step S6, adjust the cutting position of focused ion beam or cutting second coating 5 behind the sample Rotate 180 ° to the lower surface of second coating 5 that is positioned at first xsect, 6 surfaces is formed the TEM sample structure with second xsect 8, second xsect 8 is positioned at a side of second sample structure, and parallel with first xsect 6 and object cross section 7, guarantee that simultaneously distance between second xsect 8 and the object cross section 7 is less than 100nm.Wherein, if in cutting process, if cut the distance of back xsect and object cross section 7 still greater than 100nm through focused ion beam, then continue to use focused ion beam to close on this xsect and proceed cutting technique, until the xsect of last formation and the distance between the object cross section 7 during less than 100nm, just stop cutting, make the last xsect that forms as second xsect, form structure shown in Figure 7 after this step is finished.In preparation process of the present invention, because sample successively deposits and has formed two-layer oily material, the physics that has increased sample is rigid, be not easy to produce crooked and distortion when using focused ion beam to cut thinner sample in cross section, guaranteed the stability of TEM sample structure, easily sample is cut into desirable thickness, form structure shown in Figure 8 after this step is finished.As shown in the figure, adopt the TEM sample of preparation method's preparation provided by the invention, because a side is formed with the physical hardness that the oily material layer has improved sample, can guarantee to prepare the object cross section 7 of sample and the distance between first xsect 6 is 40-60nm, the TEM thickness of sample of preparing is thinner, is convenient to carry out follow-up analysis process.
Step S7, continuation are analyzed the object cross section of described TEM sample, because the object cross section that employing preparation method of the present invention prepares and the distance of first xsect are 40-60nm, in analysis, can clearly tell the interphase of diffusion impervious layer and copper, improve the analysis quality of this TEM sample.
In sum; the preparation method of a kind of TEM sample of the present invention; by the number of times that increases sedimentary deposit and the deposition process that improves protective seam; increased the physical hardness of sample; in the cutting preparation process, be not easy to produce distortion and crooked, can prepare the TEM sample of ideal thickness (40-60nm), simultaneously because the TEM thickness of sample of preparation is thinner; in the TEM sample analysis, also be easier to tell the interphase of diffusion impervious layer and copper, greatly improved the analysis quality of TEM sample.
The above only is preferred embodiment of the present invention; be not so restriction embodiments of the present invention and protection domain; to those skilled in the art; should recognize that being equal to that all utilizations instructions of the present invention and diagramatic content done replace and the resulting scheme of apparent variation, all should be included in protection scope of the present invention.
Claims (8)
1. the preparation method of a TEM sample is applied to have on the substrate of copper seed crystal structure, and described copper seed crystal structure comprises groove, it is characterized in that, may further comprise the steps:
Step S1, deposit first coating in the upper surface of described substrate, and this first coating is full of described groove;
Step S2, described first coating of cutting be the lower surface of described substrate extremely, forms first sample structure with first xsect;
Step S3, preparation second coating cover the surface of described first xsect;
Remaining first coating form second sample structure with object cross section, and this second sample structure comprises first xsect that is coated with second coating to the lower surface of remaining substrate on step S4, described first sample structure of cutting;
Step S5, described second coating of cutting form the TEM sample structure with second xsect and described object cross section to the lower surface of second coating that is positioned at described first cross-sectional surface;
Step S6, continuation are analyzed the object cross section of described TEM sample;
Wherein, the distance between described object cross section and described first xsect is 40-60nm.
2. a kind of method for preparing the TEM sample according to claim 1 is characterized in that, the material of described first coating and described second coating is oily material.
3. a kind of method for preparing the TEM sample according to claim 1 is characterized in that, adopt focused ion beam to carry out the operation of described cutting, and the direction of described cutting is parallel with the sidewall direction of described groove.
4. a kind of method for preparing the TEM sample according to claim 1, it is characterized in that, behind the position with sample Rotate 180 degree or adjustment cutting among the step S4, remaining first coating forms second sample structure with object cross section to the lower surface of remaining substrate on described first sample structure of continuation cutting.
5. a kind of method for preparing the TEM sample according to claim 1 is characterized in that, described copper seed crystal structure also comprises diffusion impervious layer and copper seed layer;
Described groove is arranged in described substrate, and described restraining barrier covers bottom and the sidewall thereof of described groove, and described copper seed layer covers the surface on described restraining barrier, and described first coating covers the surface of described copper seed layer and is full of described groove.
6. a kind of method for preparing the TEM sample according to claim 1 is characterized in that, described first sample structure comprises partially filled first coating to described groove at least.
7. a kind of method for preparing the TEM sample according to claim 1, it is characterized in that, described TEM sample also comprises remaining second coating and first xsect, described remaining second coating covers described first xsect, and described object cross section respectively with described first xsect, second transverse cross-section parallel.
8. a kind of method for preparing the TEM sample according to claim 1 is characterized in that, the distance between the object cross section of described TEM sample and described second xsect is less than 100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310082083.9A CN103196718B (en) | 2013-03-14 | 2013-03-14 | Preparation method of TEM (transverse electric and magnetic field) sample |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310082083.9A CN103196718B (en) | 2013-03-14 | 2013-03-14 | Preparation method of TEM (transverse electric and magnetic field) sample |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103196718A true CN103196718A (en) | 2013-07-10 |
| CN103196718B CN103196718B (en) | 2015-06-17 |
Family
ID=48719411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310082083.9A Active CN103196718B (en) | 2013-03-14 | 2013-03-14 | Preparation method of TEM (transverse electric and magnetic field) sample |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103196718B (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103913358A (en) * | 2014-04-10 | 2014-07-09 | 武汉新芯集成电路制造有限公司 | Preparation method and failure analysis method for transmission electron microscope (TEM) sample |
| CN104122130A (en) * | 2014-07-31 | 2014-10-29 | 上海华力微电子有限公司 | Preparation method of transmission electron microscope sample |
| CN104297037A (en) * | 2014-11-07 | 2015-01-21 | 武汉新芯集成电路制造有限公司 | Preparation method of TEM sample |
| CN104792584A (en) * | 2014-01-17 | 2015-07-22 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of TEM sample |
| CN104913957A (en) * | 2015-05-04 | 2015-09-16 | 中国石油化工股份有限公司 | Preparation method for TEM in-situ observation material matrix/passivation film interface structure sample |
| CN105092330A (en) * | 2015-08-12 | 2015-11-25 | 上海华力微电子有限公司 | Method for preparing TEM sample |
| CN105136539A (en) * | 2015-08-26 | 2015-12-09 | 上海华力微电子有限公司 | Method for preparing TEM chip sample |
| CN103868777B (en) * | 2014-03-31 | 2016-03-02 | 上海华力微电子有限公司 | The preparation method of sample for use in transmitted electron microscope |
| CN106018018A (en) * | 2016-05-13 | 2016-10-12 | 苏州博飞克分析技术服务有限公司 | Novel TEM sample preparation method for analyzing lattice imperfection in failure analysis |
| CN107643309A (en) * | 2017-08-31 | 2018-01-30 | 武汉钢铁有限公司 | The analysis method of electrical steel surface coating |
| CN107860620A (en) * | 2016-09-22 | 2018-03-30 | 中芯国际集成电路制造(上海)有限公司 | A kind of example of transmission electron microscope and preparation method thereof |
| CN111693554A (en) * | 2020-06-10 | 2020-09-22 | 华东师范大学 | Preparation method of TEM sample |
| CN112147373A (en) * | 2020-10-30 | 2020-12-29 | 上海华力微电子有限公司 | Transmission electron microscope sample and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004361138A (en) * | 2003-06-02 | 2004-12-24 | Sii Nanotechnology Inc | Fib device for tem sample processing equipped with function for automatically recognizing bending |
| CN1865898A (en) * | 2005-05-19 | 2006-11-22 | 中芯国际集成电路制造(上海)有限公司 | Transmitted electron microscope sample preparing method for step coverage detection |
| CN1979119A (en) * | 2005-12-06 | 2007-06-13 | 冲电气工业株式会社 | Transmission electron microscope test sample manufacture method, observation method and structure |
| JP2009198412A (en) * | 2008-02-25 | 2009-09-03 | Sii Nanotechnology Inc | Preparation method of sample for transmission electron microscope, and sample for transmission electron microscope |
| CN102412191A (en) * | 2011-05-13 | 2012-04-11 | 上海华力微电子有限公司 | Transmission electron microscopy sample preparation method capable of detecting Damascus seed crystal layer and barrier layer |
| CN102809496A (en) * | 2011-06-03 | 2012-12-05 | Fei公司 | Method for preparing thin samples for tem imaging |
-
2013
- 2013-03-14 CN CN201310082083.9A patent/CN103196718B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004361138A (en) * | 2003-06-02 | 2004-12-24 | Sii Nanotechnology Inc | Fib device for tem sample processing equipped with function for automatically recognizing bending |
| CN1865898A (en) * | 2005-05-19 | 2006-11-22 | 中芯国际集成电路制造(上海)有限公司 | Transmitted electron microscope sample preparing method for step coverage detection |
| CN1979119A (en) * | 2005-12-06 | 2007-06-13 | 冲电气工业株式会社 | Transmission electron microscope test sample manufacture method, observation method and structure |
| JP2009198412A (en) * | 2008-02-25 | 2009-09-03 | Sii Nanotechnology Inc | Preparation method of sample for transmission electron microscope, and sample for transmission electron microscope |
| CN102412191A (en) * | 2011-05-13 | 2012-04-11 | 上海华力微电子有限公司 | Transmission electron microscopy sample preparation method capable of detecting Damascus seed crystal layer and barrier layer |
| CN102809496A (en) * | 2011-06-03 | 2012-12-05 | Fei公司 | Method for preparing thin samples for tem imaging |
Non-Patent Citations (3)
| Title |
|---|
| JOACHIM MAYER 等: ""TEM Sample Preparation and FIB-Induced Damage"", 《MRS BULLETIN》, vol. 32, no. 5, 31 May 2007 (2007-05-31) * |
| 林舒 等: ""薄膜的截面TEM样品制备"", 《电子显微学报》, vol. 25, 31 December 2006 (2006-12-31) * |
| 褚维群 等: ""TEM样品制备中离子束对样品的损伤分析"", 《计算机技术与发展》, vol. 18, no. 2, 29 February 2008 (2008-02-29) * |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104792584A (en) * | 2014-01-17 | 2015-07-22 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of TEM sample |
| CN104792584B (en) * | 2014-01-17 | 2017-08-29 | 中芯国际集成电路制造(上海)有限公司 | A kind of preparation method of TEM sample |
| CN103868777B (en) * | 2014-03-31 | 2016-03-02 | 上海华力微电子有限公司 | The preparation method of sample for use in transmitted electron microscope |
| CN103913358A (en) * | 2014-04-10 | 2014-07-09 | 武汉新芯集成电路制造有限公司 | Preparation method and failure analysis method for transmission electron microscope (TEM) sample |
| CN103913358B (en) * | 2014-04-10 | 2017-10-27 | 武汉新芯集成电路制造有限公司 | The preparation method and failure analysis method of TEM sample |
| CN104122130A (en) * | 2014-07-31 | 2014-10-29 | 上海华力微电子有限公司 | Preparation method of transmission electron microscope sample |
| CN104122130B (en) * | 2014-07-31 | 2019-08-20 | 上海华力微电子有限公司 | A kind of preparation method of transmission electron microscope sample |
| CN104297037B (en) * | 2014-11-07 | 2017-03-08 | 武汉新芯集成电路制造有限公司 | A kind of preparation method of TEM sample |
| CN104297037A (en) * | 2014-11-07 | 2015-01-21 | 武汉新芯集成电路制造有限公司 | Preparation method of TEM sample |
| CN104913957B (en) * | 2015-05-04 | 2019-07-19 | 中国石油化工股份有限公司 | TEM home position observation material matrix/passivating film interfacial structure sample preparation methods |
| CN104913957A (en) * | 2015-05-04 | 2015-09-16 | 中国石油化工股份有限公司 | Preparation method for TEM in-situ observation material matrix/passivation film interface structure sample |
| CN105092330B (en) * | 2015-08-12 | 2017-12-22 | 上海华力微电子有限公司 | A kind of TEM sample preparation method |
| CN105092330A (en) * | 2015-08-12 | 2015-11-25 | 上海华力微电子有限公司 | Method for preparing TEM sample |
| CN105136539A (en) * | 2015-08-26 | 2015-12-09 | 上海华力微电子有限公司 | Method for preparing TEM chip sample |
| CN106018018A (en) * | 2016-05-13 | 2016-10-12 | 苏州博飞克分析技术服务有限公司 | Novel TEM sample preparation method for analyzing lattice imperfection in failure analysis |
| CN107860620A (en) * | 2016-09-22 | 2018-03-30 | 中芯国际集成电路制造(上海)有限公司 | A kind of example of transmission electron microscope and preparation method thereof |
| CN107860620B (en) * | 2016-09-22 | 2020-07-28 | 中芯国际集成电路制造(上海)有限公司 | Transmission electron microscope sample and preparation method thereof |
| CN107643309A (en) * | 2017-08-31 | 2018-01-30 | 武汉钢铁有限公司 | The analysis method of electrical steel surface coating |
| CN107643309B (en) * | 2017-08-31 | 2020-04-07 | 武汉钢铁有限公司 | Analysis method of electrical steel surface coating |
| CN111693554A (en) * | 2020-06-10 | 2020-09-22 | 华东师范大学 | Preparation method of TEM sample |
| CN112147373A (en) * | 2020-10-30 | 2020-12-29 | 上海华力微电子有限公司 | Transmission electron microscope sample and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103196718B (en) | 2015-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103196718A (en) | Preparation method of TEM (transverse electric and magnetic field) sample | |
| CN104204275B (en) | The coated cutting tool of nanometer lamination | |
| KR102259274B1 (en) | Surface-coated cutting tool and method of producing the same | |
| EP3175014B1 (en) | Razor blade coating | |
| CN102384867B (en) | Method for preparing failure analysis sample | |
| CN103808540B (en) | Transmission electron microscope sample preparation method | |
| CN106660137B (en) | Surface-coated cutting tool | |
| CN104093881B (en) | Coated cutting tool and preparation method thereof | |
| KR20180016238A (en) | Surface-coated cutting tool | |
| CN103868777B (en) | The preparation method of sample for use in transmitted electron microscope | |
| CN104736743A (en) | Coated cutting tool with patterned surface area | |
| CN107816949B (en) | A kind of accumulation layer measured film thickness method for 3D nand memory | |
| CN108010860B (en) | Self-positioning electromigration test structure and transmission electron microscope sample preparation method | |
| KR102202521B1 (en) | Surface-coated cutting tool and its manufacturing method | |
| CN104458371B (en) | Preparation method of TEM sample | |
| Ghafoor et al. | Self-structuring in Zr1− xAlxN films as a function of composition and growth temperature | |
| CN107849683B (en) | Coating film | |
| CN102854048A (en) | Preparation method of transmitting sample with crack tip | |
| Aebersold et al. | Height-resolved quantification of microstructure and texture in polycrystalline thin films using TEM orientation mapping | |
| Aschauer et al. | Ultra-high oxidation resistance of nano-structured thin films | |
| EP4112536A1 (en) | Manufacturing method for graphite island sliding block arrays | |
| Dhaka et al. | Stress and structure at the NiO/Ag (001) interface | |
| CN107557755B (en) | With { 001 } textured kappa-Al2O3CVD coated cutting tool for layers | |
| Vaxelaire et al. | Sub-micrometre depth-gradient measurements of phase, strain and texture in polycrystalline thin films: a nano-pencil beam diffraction approach | |
| KR20180026656A (en) | Surface-coated cutting tool |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |