CN103187937B - Differential radio frequency amplifier based on dynamic auto bias circuit - Google Patents
Differential radio frequency amplifier based on dynamic auto bias circuit Download PDFInfo
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- CN103187937B CN103187937B CN201310076883.XA CN201310076883A CN103187937B CN 103187937 B CN103187937 B CN 103187937B CN 201310076883 A CN201310076883 A CN 201310076883A CN 103187937 B CN103187937 B CN 103187937B
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- 229910044991 metal oxide Inorganic materials 0.000 claims description 12
- 150000004706 metal oxides Chemical class 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
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Abstract
A kind of differential radio frequency amplifier based on dynamic auto bias circuit, including common gate device grid quiescent bias circuit and charge pump circuit, it is made up of the MOS transistor of four N-channel, two capacitances, two diodes, output transformer, biasing resistor and load resistance.The present invention by amplifier circuit itself according to the amplitude of output signal, dynamically change the grid voltage of common gate device, make amplifier circuit only amplitude output signal is bigger when, improve the grid voltage of gate device altogether, to reach to improve peak power output and efficiency.
Description
Technical field
The present invention relates to differential radio frequency amplifier, a kind of differential radio frequency based on dynamic auto bias circuit amplifies
Device, has bigger power output and efficiency.
Background technology
CMOS differential radio frequency power amplifier generally uses cascode structure, as shown in Figure 1.Radio-frequency differential inputs
Signal is at the grid of common source device 101, and the grid voltage of gate device 102 is usually fixed voltage altogether.In order to improve
The gain of amplifier and efficiency, common source device generally uses the voltage devices that high frequency performance is good, and gate device leads to altogether
Frequently with the high tension apparatus that breakdown voltage is high.The static bias voltage improving gate device altogether can improve the maximum of amplifier
Power output and efficiency, but the drain electrode quiescent voltage of common source device so also can be made too high, to the common source of low pressure
The reliability of device brings problem.The biasing selection of gate device can not be the highest the most altogether, to avoid the leakage of common source device
Pole quiescent voltage exceedes setting.
The input signal of linear power amplifier and the amplitude of output signal change over, and excursion is by modulation methods
Formula determines.Conventional difference cascode radio frequency amplifier only comprises common gate device grid quiescent bias circuit, grid
Voltage is fixed value, not the changes in amplitude of radio frequency signal.
Summary of the invention
It is an object of the invention to provide a kind of differential radio frequency amplifier based on dynamic auto bias circuit, this difference is penetrated
The biasing circuit of audio amplifier is static at the grid static bias voltage and common source device drain not improving common gate device
Voltage, on the premise of not affecting device reliability, by amplifier circuit itself according to the amplitude of output signal, dynamically
Ground changes the grid voltage of gate device altogether so that amplifier circuit, only amplitude output signal is bigger when, improves
The grid voltage of gate device altogether, to reach to improve peak power output and efficiency.
The technical solution of the present invention is as follows:
A kind of differential radio frequency amplifier based on dynamic auto bias circuit, its feature is by the metal of the first N-channel
Oxide semiconductor tube, the MOS transistor of the second N-channel, the metal oxide half of the 3rd N-channel
Conductor tube, the MOS transistor of the 4th N-channel, the first capacitance, the second capacitance, first
Diode, the second diode, output transformer, biasing resistor and load resistance composition, the connection of above-mentioned component
Relation is as follows:
The MOS transistor of the first N-channel and the grid of the MOS transistor of the second N-channel
Partly lead for differential input end, the MOS transistor of the first N-channel and the metal oxide of the second N-channel
The source electrode of body pipe connects together and ground connection；The MOS transistor of the 3rd N-channel and the gold of the 4th N-channel
Belong to oxide semiconductor tube for folded pipe, their source electrode and the MOS transistor of the first N-channel and second
The drain electrode of the MOS transistor of N-channel connects respectively, forms difference cascode structure；3rd N ditch
The grid of the MOS transistor in road and the MOS transistor of the 4th N-channel links together,
And be connected with biasing resistor, another termination bias voltage of this biasing resistor；The former limit of described output transformer with
The MOS transistor of the 3rd described N-channel and the leakage of the MOS transistor of the 4th N-channel
The most connected, the first described capacitance and the positive pole of the first diode are connected, the other end of the first capacitance and
The drain electrode of the MOS transistor of the 3rd N-channel is connected, the negative pole of the first diode and the 3rd N-channel
The grid of MOS transistor is connected；The second described capacitance and the second diode cathode are connected,
The drain electrode of the other end of the second capacitance and the MOS transistor of the 4th N-channel is connected, the two or two pole
The grid of the negative pole of pipe and the MOS transistor of the 4th N-channel is connected, described the first capacitance,
Second capacitance, the first diode and the second diode collectively constitute charge pump circuit.
The first described diode and the second diode respectively by the MOS transistor of the 5th N-channel,
The MOS transistor of six N-channel is replaced, the MOS transistor of the 5th described N-channel
Grid is connected together with drain electrode and is connected with the first capacitance, the other end of the first capacitance and the 3rd N ditch
The drain electrode of the MOS transistor in road is connected；The MOS transistor of the 6th described N-channel
Grid is connected together with drain electrode and is connected with the second capacitance, the other end of the second capacitance and the 4th N ditch
The drain electrode of the MOS transistor in road is connected, the source electrode of the MOS transistor of the 5th N-channel,
The source electrode of the MOS transistor of the 6th N-channel, the metal-oxide semiconductor (MOS) of the 3rd described N-channel
The grid of the grid of pipe and the MOS transistor of the 4th N-channel is linked to be node, and described first is every straight electricity
Appearance, the second capacitance, the MOS transistor of the 5th N-channel and the metal oxide of the 6th N-channel
Transistor collectively constitutes charge pump circuit.
The structure of present invention differential radio frequency based on dynamic auto bias circuit amplifier is as in figure 2 it is shown, main by common grid
Device grids quiescent bias circuit and charge pump circuit composition.Charge pump circuit can by capacitance and diode or
Person provides the device of identity function to realize.At amplifier without input/output signal or input/output signal amplitude relatively
The when of little, the grid voltage of gate device is determined by conventional quiescent bias circuit and provides altogether.When output signal width
When spending big, diode current flow, charge pump circuit is started working, and is charged the grid capacitance of common gate device, with
Improve grid voltage.The discharge and recharge time constant of charge pump circuit should be sufficiently fast, can follow the tracks of input/output well
The envelope signal of radio frequency letter.
Along with the speed of mobile communication equipment improves, the complexity of rf-signal modulation mode is consequently increased.Penetrate
The amplitude output signal ground change of audio amplifier is increasing.The peak power output of balanced radio frequency amplifier, efficiency
The most increasing with the difficulty that reliability is brought.
The solution have the advantages that:
Present invention differential radio frequency based on dynamic auto bias circuit amplifier on the premise of not affecting device reliability,
By amplifier circuit itself according to the amplitude of output signal, dynamically change the grid voltage of common gate device so that put
Big device circuit, only amplitude output signal is bigger when, improves the grid voltage of gate device altogether, to reach to improve
Big power output and efficiency.
Accompanying drawing explanation
Fig. 1 conventional cmos differential radio frequency amplifier circuit figure.
The circuit diagram of Fig. 2 present invention differential radio frequency based on dynamic auto bias circuit amplifier embodiment 1.
The circuit diagram of Fig. 3 present invention differential radio frequency based on dynamic auto bias circuit amplifier embodiment 2.
Fig. 4 conventional cmos differential radio frequency amplifier circuit gate device grid voltage altogether is with signal variation diagram.
Fig. 5 present invention differential radio frequency based on dynamic auto bias circuit amplifier gate device grid voltage altogether becomes with signal
Change figure.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the invention will be further described, but should not limit the protection of the present invention with this
Scope.
First refer to Fig. 2, Fig. 2 present invention differential radio frequency based on dynamic auto bias circuit amplifier embodiment 1
Circuit diagram, as seen from the figure, the present invention
Differential radio frequency amplifier based on dynamic auto bias circuit, by the MOS transistor of the first N-channel
M1, the MOS transistor M2 of the second N-channel, the MOS transistor M3 of the 3rd N-channel,
The MOS transistor M4 of the 4th N-channel, the first capacitance C1, the second capacitance C2, first
Diode D1, the second diode D2, output transformer L1, biasing resistor R1 and load resistance R2 composition, on
The annexation stating component is as follows:
The MOS transistor M1 of the first N-channel and the MOS transistor M2 of the second N-channel
Grid be differential input end, the MOS transistor M1 of the first N-channel and the metal oxygen of the second N-channel
The source electrode of compound transistor M2 connects together and ground connection；The MOS transistor M3 of the 3rd N-channel and
The MOS transistor M4 of the 4th N-channel is folded pipe, their source electrode and the burning of the first N-channel
The drain electrode of the MOS transistor M2 of thing transistor M1 and the second N-channel connects respectively, forms difference
Cascode structure；The MOS transistor M3 of the 3rd N-channel and the metal oxide of the 4th N-channel half
The grid of conductor tube M4 links together and is connected with biasing resistor R1, another termination biasing of this biasing resistor R1
Voltage；The two ends on the former limit of described output transformer L1 respectively with the metal oxide of the 3rd described N-channel half
The drain electrode of the MOS transistor M4 of conductor tube M3 and the 4th N-channel is connected, described output transformer
The secondary of L1 connects described load resistance R2, the first described capacitance C1 and the positive pole phase of the first diode D1
Connection, the drain electrode of the other end of the first capacitance C1 and the MOS transistor M3 of the 3rd N-channel is connected,
The grid of the negative pole of the first diode D1 and the MOS transistor M3 of the 3rd N-channel is connected；Described
The second capacitance C2 and the second diode D2 positive pole be connected, the other end of the second capacitance C2 and the 4th N
The drain electrode of the MOS transistor M4 of raceway groove is connected, the negative pole of the second diode D2 and the 4th N-channel
The grid of MOS transistor M4 is connected, described the first capacitance C1, the second capacitance C2,
First diode D1 and the second diode D2 collectively constitutes charge pump circuit.
The circuit diagram of Fig. 3 present invention differential radio frequency based on dynamic auto bias circuit amplifier embodiment 2, can by figure
Seeing, the first diode D1 and the second diode D2 in Fig. 2 are partly led by the metal oxide of the 5th N-channel respectively
Body pipe M5, the MOS transistor M6 of the 6th N-channel replace and constitute the embodiment of the present invention 2, annexation
Be: the grid of the MOS transistor M5 of the 5th described N-channel and drain electrode be connected together and and first every
Straight electric capacity C1 is connected, the other end of the first capacitance C1 and the MOS transistor of the 3rd N-channel
The drain electrode of M3 is connected；Grid and the drain electrode of the MOS transistor M6 of the 6th described N-channel are connected on one
Rise and be connected with the second capacitance C2, the other end of the second capacitance C2 and the metal oxygen of the 4th N-channel
The drain electrode of compound transistor M4 is connected, the source electrode of MOS transistor M5 of the 5th N-channel, the 6th
The source electrode of the MOS transistor M6 of N-channel, the MOS transistor of the 3rd described N-channel
The grid of the grid of M3 and the MOS transistor M4 of the 4th N-channel is linked to be node, described first every
Straight electric capacity C1, the second capacitance C2, the MOS transistor M5 of the 5th N-channel and the 6th N-channel
MOS transistor M6 collectively constitute charge pump circuit.
Amplitude output signal is big when, the electric charge pump impeller stream ON operation of the right and left, to the grid of common gate device
Electrode capacitance charges, and improves grid voltage.When amplitude output signal reduces when, grid capacitance passes through biasing resistor
R1 and the electric discharge of diode D1, D2 reverse current leakage, grid voltage is reduced to static bias voltage value.
Conventional cmos differential radio frequency amplifier circuit gate device grid voltage altogether is dynamic certainly with signal intensity and the present invention
The circuit of the differential radio frequency amplifier of biasing circuit gate device grid voltage altogether is with signal intensity as shown in Figure 4 and Figure 5.
Claims (2)
1. a differential radio frequency amplifier based on dynamic auto bias circuit, it is characterised in that by the gold of the first N-channel
Belong to oxide semiconductor tube (M1), the MOS transistor (M2) of the second N-channel, the 3rd N-channel
MOS transistor (M3), the MOS transistor (M4) of the 4th N-channel, first every straight electricity
Hold (C1), the second capacitance (C2), the first diode (D1), the second diode (D2), output transformer
(L1), biasing resistor (R1) and load resistance (R2) composition, the annexation of above-mentioned component is as follows:
The MOS transistor (M1) of the first N-channel and the MOS transistor of the second N-channel
(M2) grid is differential input end, the MOS transistor (M1) of the first N-channel and the 2nd N ditch
The source electrode of the MOS transistor (M2) in road connects together and ground connection；The metal oxide of the 3rd N-channel
The MOS transistor (M4) of transistor (M3) and the 4th N-channel is folded pipe, their source electrode with
The MOS transistor (M1) of the first N-channel and the MOS transistor (M2) of the second N-channel
Drain electrode connect respectively, form difference cascode structure；The MOS transistor (M3) of the 3rd N-channel
Link together with the grid of the MOS transistor (M4) of the 4th N-channel, and and biasing resistor (R1)
It is connected, another termination bias voltage of this biasing resistor (R1)；The former limit of described output transformer (L1) with
The MOS transistor (M3) of the 3rd described N-channel and the metal-oxide semiconductor (MOS) of the 4th N-channel
The drain electrode of pipe (M4) is connected, and the secondary of described output transformer (L1) meets described load resistance (R2), institute
The first capacitance (C1) stated and the positive pole of the first diode (D1) are connected, the first capacitance (C1)
The drain electrode of the MOS transistor (M3) of the other end and the 3rd N-channel is connected, the first diode (D1)
Negative pole and the grid of MOS transistor (M3) of the 3rd N-channel be connected；Described second is every directly
Electric capacity (C2) and the second diode (D2) positive pole are connected, the other end of the second capacitance (C2) and the 4th N
The drain electrode of the MOS transistor (M4) of raceway groove is connected, the negative pole of the second diode (D2) and the 4th N
The grid of the MOS transistor (M4) of raceway groove is connected, described the first capacitance (C1), second
Capacitance (C2), the first diode (D1) and the second diode (D2) collectively constitute charge pump circuit.
Differential radio frequency amplifier based on dynamic auto bias circuit the most according to claim 1, it is characterised in that
Described the first diode (D1) and the second diode (D2) are partly led by the metal oxide of the 5th N-channel respectively
Body pipe (M5), the MOS transistor (M6) of the 6th N-channel are replaced, the gold of the 5th described N-channel
The grid belonging to oxide semiconductor tube (M5) is connected together with drain electrode and is connected with the first capacitance (C1),
The other end of the first capacitance (C1) and the drain electrode phase of the MOS transistor (M3) of the 3rd N-channel
Even；The grid of the MOS transistor (M6) of the 6th described N-channel and drain electrode are connected together and and the
Two capacitances (C2) are connected, the other end of the second capacitance (C2) and the burning of the 4th N-channel
The drain electrode of thing transistor (M4) is connected, the source electrode of the MOS transistor (M5) of the 5th N-channel,
The source electrode of the MOS transistor (M6) of the 6th N-channel, the metal oxide of the 3rd described N-channel
The grid of the grid of transistor (M3) and the MOS transistor (M4) of the 4th N-channel is linked to be node,
Described the first capacitance (C1), the second capacitance (C2), the metal-oxide semiconductor (MOS) of the 5th N-channel
The MOS transistor (M6) of pipe (M5) and the 6th N-channel collectively constitutes charge pump circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310076883.XA CN103187937B (en) | 2013-03-11 | 2013-03-11 | Differential radio frequency amplifier based on dynamic auto bias circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310076883.XA CN103187937B (en) | 2013-03-11 | 2013-03-11 | Differential radio frequency amplifier based on dynamic auto bias circuit |
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| CN103187937A CN103187937A (en) | 2013-07-03 |
| CN103187937B true CN103187937B (en) | 2016-09-07 |
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| US9696738B2 (en) * | 2014-12-24 | 2017-07-04 | Texas Instruments Incorporated | Low power ideal diode control circuit |
| CN106230392A (en) * | 2016-07-18 | 2016-12-14 | 东南大学 | A kind of bias node adaptive High Linear envelope tracking power amplifier |
| CN107276547B (en) * | 2017-06-06 | 2020-06-26 | 江苏微远芯微系统技术有限公司 | Monolithic integrated millimeter wave switch mode power amplifier circuit |
| CN111293997A (en) * | 2020-03-18 | 2020-06-16 | 广州慧智微电子有限公司 | Overvoltage protection and gain bootstrap circuit of power amplifier |
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| US6236269B1 (en) * | 1999-10-07 | 2001-05-22 | National Semiconductor Corporation | Complementary CMOS differential amplifier circuit |
| CN1574612A (en) * | 2003-05-22 | 2005-02-02 | 松下电器产业株式会社 | High frequency differential circuit, differential amplifier, differential mixer, differential oscillator, and radio circuit using same |
| US7221217B2 (en) * | 2002-10-21 | 2007-05-22 | University Of Washington | Self-bias and digitally tunable conduction angle circuits for a differential RF non-linear power amplifier employing low-voltage transistors |
| CN102142819A (en) * | 2011-03-04 | 2011-08-03 | 惠州市正源微电子有限公司 | Radio frequency power amplifier based on transformer |
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| CN203206183U (en) * | 2013-03-11 | 2013-09-18 | 豪芯微电子科技（上海）有限公司 | Differential radio-frequency amplifier |
-
2013
- 2013-03-11 CN CN201310076883.XA patent/CN103187937B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4546327A (en) * | 1982-07-14 | 1985-10-08 | Tokyo Shibaura Denki Kabushiki Kaisha | Analog signal power amplifier circuit |
| US6236269B1 (en) * | 1999-10-07 | 2001-05-22 | National Semiconductor Corporation | Complementary CMOS differential amplifier circuit |
| US7221217B2 (en) * | 2002-10-21 | 2007-05-22 | University Of Washington | Self-bias and digitally tunable conduction angle circuits for a differential RF non-linear power amplifier employing low-voltage transistors |
| CN1574612A (en) * | 2003-05-22 | 2005-02-02 | 松下电器产业株式会社 | High frequency differential circuit, differential amplifier, differential mixer, differential oscillator, and radio circuit using same |
| CN102142819A (en) * | 2011-03-04 | 2011-08-03 | 惠州市正源微电子有限公司 | Radio frequency power amplifier based on transformer |
| CN102843107A (en) * | 2012-09-24 | 2012-12-26 | 无锡中科微电子工业技术研究院有限责任公司 | Radio frequency power amplifier circuit with automatic output power regulation function |
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| Title |
|---|
| 《A Cascode Feedback Bias Technique for Linear CMOS Power Amplifiers in a Multistage Cascode Topology》;Hamhee Jeon,et;《IEEE Transactions On Microwave Theory And Techniques》;20130228;第61卷(第2期);全文 * |
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