CN103187498A - 一种半导体结构及其形成方法 - Google Patents
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9755111B2 (en) | 2013-06-05 | 2017-09-05 | Nitto Optical Co., Ltd. | Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD) |
CN109768132A (zh) * | 2019-01-07 | 2019-05-17 | 华灿光电(浙江)有限公司 | 一种发光二极管的外延片及其制备方法 |
CN111384214A (zh) * | 2018-12-28 | 2020-07-07 | Tcl集团股份有限公司 | 一种量子阱结构的制备方法和量子阱结构 |
FR3107051A1 (fr) * | 2020-02-12 | 2021-08-13 | Centre National De La Recherche Scientifique | Procédé de fabrication de nanostructures de nitrure d’aluminium et de gallium (AlGaN) |
CN117712249A (zh) * | 2024-02-05 | 2024-03-15 | 江西兆驰半导体有限公司 | 一种发光二极管外延片及制备方法 |
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JP2000077783A (ja) * | 1998-08-27 | 2000-03-14 | Nec Corp | インジウムを含む窒化物半導体結晶の成長方法 |
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CN102034912A (zh) * | 2009-12-29 | 2011-04-27 | 比亚迪股份有限公司 | 发光二极管外延片、其制作方法及芯片的制作方法 |
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CN102254800A (zh) * | 2011-06-21 | 2011-11-23 | 清华大学 | 一种GaN基量子点的外延生长方法 |
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JP2000077783A (ja) * | 1998-08-27 | 2000-03-14 | Nec Corp | インジウムを含む窒化物半導体結晶の成長方法 |
CN1571177A (zh) * | 2003-07-24 | 2005-01-26 | 璨圆光电股份有限公司 | 发光二极管结构及其制造方法 |
US20100112742A1 (en) * | 2005-04-06 | 2010-05-06 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor device and method for making same |
US20090236586A1 (en) * | 2006-08-15 | 2009-09-24 | Institute of Physics, Chinese Academy of Science | Epitaxial material used for gan based led with low polarization effect and manufacturing method thereof |
KR20090047034A (ko) * | 2007-11-07 | 2009-05-12 | 주식회사 실트론 | 질화물계 반도체 소자 |
CN101728472A (zh) * | 2009-12-02 | 2010-06-09 | 中国科学院半导体研究所 | 一种多层led芯片结构及其制备方法 |
CN102088050A (zh) * | 2009-12-08 | 2011-06-08 | Lg伊诺特有限公司 | 发光器件、发光器件封装和照明系统 |
CN102034912A (zh) * | 2009-12-29 | 2011-04-27 | 比亚迪股份有限公司 | 发光二极管外延片、其制作方法及芯片的制作方法 |
CN102142491A (zh) * | 2010-02-01 | 2011-08-03 | Lg伊诺特有限公司 | 发光器件、发光器件封装以及照明系统 |
CN102254800A (zh) * | 2011-06-21 | 2011-11-23 | 清华大学 | 一种GaN基量子点的外延生长方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9755111B2 (en) | 2013-06-05 | 2017-09-05 | Nitto Optical Co., Ltd. | Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD) |
DE112014002691B4 (de) | 2013-06-05 | 2018-03-08 | Nitto Optical Co., Ltd. | Anregungsbereich, der Nanopunkte (auch als "Quantenpunkte" bezeichnet) in einem Matrixkristall umfasst, der auf Si-Substrat gezüchtet wurde und aus AlyInxGa1-y-xN-Kristall (y ≧ 0, x > 0) mit Zinkblendestruktur (auch als "kubisch" bezeichnet) besteht, und lichtemittierende Vorrichtung (LED und LD), die unter Verwendung desselben erhalten wurde |
CN111384214A (zh) * | 2018-12-28 | 2020-07-07 | Tcl集团股份有限公司 | 一种量子阱结构的制备方法和量子阱结构 |
CN111384214B (zh) * | 2018-12-28 | 2021-07-23 | Tcl科技集团股份有限公司 | 一种量子阱结构的制备方法和量子阱结构 |
CN109768132A (zh) * | 2019-01-07 | 2019-05-17 | 华灿光电(浙江)有限公司 | 一种发光二极管的外延片及其制备方法 |
CN109768132B (zh) * | 2019-01-07 | 2020-08-14 | 华灿光电(浙江)有限公司 | 一种发光二极管的外延片及其制备方法 |
FR3107051A1 (fr) * | 2020-02-12 | 2021-08-13 | Centre National De La Recherche Scientifique | Procédé de fabrication de nanostructures de nitrure d’aluminium et de gallium (AlGaN) |
WO2021160664A1 (fr) * | 2020-02-12 | 2021-08-19 | Centre National De La Recherche Scientifique | PROCEDE DE FABRICATION DE NANOSTRUCTURES DE NITRURE D'ALUMINIUM ET DE GALLIUM (AlGaN) |
CN117712249A (zh) * | 2024-02-05 | 2024-03-15 | 江西兆驰半导体有限公司 | 一种发光二极管外延片及制备方法 |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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