CN103185909A - Micro-electro-mechanical adjustable nitride resonant grating and double-sided processing method thereof - Google Patents
Micro-electro-mechanical adjustable nitride resonant grating and double-sided processing method thereof Download PDFInfo
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- CN103185909A CN103185909A CN2013100853353A CN201310085335A CN103185909A CN 103185909 A CN103185909 A CN 103185909A CN 2013100853353 A CN2013100853353 A CN 2013100853353A CN 201310085335 A CN201310085335 A CN 201310085335A CN 103185909 A CN103185909 A CN 103185909A
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Abstract
The invention discloses a micro-electro-mechanical adjustable nitride resonant grating, realizes integration of the nitride resonant grating and a micro nano electrostatic driver, and provides a double-sided processing method for preparing the micro-electro-mechanical adjustable nitride resonant grating. The micro-electro-mechanical adjustable nitride resonant grating is realized on a high-resistance silicon substrate nitride wafer, devices are defined and etched by techniques such as thin film deposition, electron beam lithography, photoetching, reactive ion etching and III-V group etching, the high-resistance silicon substrate under the micro-electro-mechanical adjustable nitride resonant grating is removed through a back alignment process and a deep silicon etching technique, then the back of the micro-electro-mechanical adjustable nitride grating is thinned by the III-V group etching technique, and therefore, the integration of the suspended micro nano electrostatic driver and the resonant grating is completed. Structure parameters such as the cycle and the duty ratio of the resonant grating are regulated through the micro nano electrostatic driver, so that the purpose of changing the optical performance of the devices is achieved.
Description
Technical field
The invention belongs to information material and device technology field, relate to two-sided processing method and prepare micro electronmechanical adjustable nitride resonance grating.
Background technology
Nitride material, particularly gallium nitride material have good optical property near infrared and visible light wave range, and application prospect is extensive.Be grown in the nitride material on the High Resistivity Si substrate, provide possibility for realizing micro electronmechanical adjustable nitride photonic devices: 1, utilize the High Resistivity Si substrate can realize the insulation isolation of device, the electrostatic attraction between the performance device architecture; 2, utilize dark silicon etching technology, can solve the problem of peeling off of High Resistivity Si substrate and nitride material, obtain unsettled nitride film; 3, the high index of refraction difference of nitride material and air can design the resonance grating of realizing premium properties, and its optical property is subjected to the influence of material thickness and optical grating construction; 4, nitride material particularly gallium nitride material has good machinery system energy, is fit to the development micro electro mechanical device; 5, because electrostatic attraction, the micro-nano driver is seen will produce physical displacement, utilizes spring structure, and structural parameters such as the cycle of change resonance grating, dutycycle are realized the regulation and control to the grating optical property.
Summary of the invention
Technical matters:The present invention proposes two-sided processing method and prepares micro electronmechanical adjustable nitride resonance grating, comprises fixed fingers, removable broach, spring structure and resonance optical grating construction.The thickness of High Resistivity Si underlayer nitriding thing device layer determines that by growth conditions the thickness degree of freedom is less usually, and for design nitride resonance photonic device brings difficulty, the etching of thick film nitride processing simultaneously is a great problem.Technical method provided by the invention can solve the processing problems of unsettled nitride device, obtain nitride micro-nano electrostatic actuator and the resonance grating of controllable thickness, and integrated by micro electromechanical structure and resonance grating, realize the controlled of device architecture, thereby change the optical property of device.
Technical scheme:Micro electronmechanical adjustable nitride resonance grating of the present invention, on the nitride layer of High Resistivity Si underlayer nitriding thing wafer, the isolation channel that is provided with the first polarity zone, the second polarity zone, isolates first polarity zone and the second polarity zone, the first polarity zone is provided with fixed fingers, the second polarity zone is provided with resonance optical grating construction, spring structure and the removable broach that connects successively, the relative setting of staggering with fixed fingers of removable broach.
Among the present invention, fixed fingers, resonance optical grating construction, spring structure and removable broach are nanostructured.
Among the present invention, on High Resistivity Si underlayer nitriding thing wafer, adopt unsettled nitride film thinning technique behind, realize the adjustable micro electronmechanical adjustable nitride harmonic light gate device of nitride layer thickness.
The present invention prepares the two-sided job operation of micro electronmechanical adjustable nitride resonance grating, utilize the physical characteristics of High Resistivity Si, realize separating of driver fixed part and moveable part, utilize the moveable part of electrostatic attraction driving element, change the structural parameters of nitride resonance grating, the optical property of regulation and control device.Comprise following concrete steps:
1) carries out the behind at High Resistivity Si underlayer nitriding thing wafer and polish attenuate;
2) form mask layer at High Resistivity Si underlayer nitriding thing wafer, at the device architecture of the mask layer miniature nano electrostatic driver of definition and nitride resonance grating, the device architecture with miniature nano electrostatic driver and nitride resonance grating is transferred on the nitride layer of High Resistivity Si underlayer nitriding thing wafer from mask layer afterwards then;
3) remove remaining mask layer;
4) spin coating photoresist on nitride layer forms photoresist layer;
5) adopt photoetching technique, define isolation channel at photoresist layer;
6) adopt three or five family's lithographic techniques, on nitride layer, isolation channel is etched to the High Resistivity Si substrate;
7) remove remaining photoresist layer on the nitride layer;
8) spin coating one deck protection glue is used for protection device construction on nitride layer, and spin coating one deck photoresist on the High Resistivity Si substrate layer forms photoresist layer simultaneously;
9) use Alignment Process behind, the device on the nitride layer of location, concrete grammar is: adopt the method for photoetching, open the window corresponding with device position at the photoresist layer of High Resistivity Si substrate layer spin coating;
10) method of the dark silicon etching of employing ICP, by the photoresist layer window that step 9) forms, etching High Resistivity Si substrate layer is until nitride layer;
11) adopt ICP three or five family's lithographic technique etchings, by the opened window of step 10), continue etch nitride layer, separate with fixed fingers until the removable broach of realization, and the separation of resonance optical grating construction;
12) remaining photoresist layer on the protection glue-line on the removal nitride layer and the High Resistivity Si substrate is realized micro electronmechanical turnable resonator grating.
In the preferred version of the present invention, step 2) and the mask layer in the step 3) be electron beam glue-line, step 2) in adopt ion beam bombardment method or three or five family's lithographic techniques, the device architecture of definition is transferred on the nitride layer from the electron beam glue-line.
In the preferred version of the present invention, step 2) and the mask layer in the step 3) be included in hafnia mask layer or the earth silicon mask layer that forms on the High Resistivity Si underlayer nitriding thing wafer, and the electron beam glue-line that forms at hafnia mask layer or earth silicon mask layer, step 2) in, define the device architecture of miniature nano electrostatic driver and nitride resonance grating earlier at the electron beam glue-line, adopt the method for ion beam bombardment method or reactive ion etching afterwards, the device architecture of miniature nano electrostatic driver and nitride resonance grating is transferred to hafnia mask layer or earth silicon mask layer from the electron beam glue-line, adopt ion beam bombardment method or three or five family's lithographic techniques then, the device architecture of definition is transferred on the nitride layer from hafnia mask layer or earth silicon mask layer.
The present invention can be in conjunction with the nitride mask lithographic technique, adopt silicon dioxide or hafnia film, as the etch mask layer, can before step 1), adopt corresponding film technique, and adopt electron beam exposure at first at mask layer definition micro-nano electrostatic actuator and resonance optical grating construction, wear mask layer to the nitride device layer quarter by the mask layer lithographic technique, adopt ion beam bombardment or reactive ion beam etching (RIBE) method then, obtain nitride micro-nano electrostatic actuator and resonance optical grating construction.
Beneficial effect:The present invention compared with prior art has the following advantages:
Micro electronmechanical adjustable nitride resonance grating of the present invention is implemented on the High Resistivity Si underlayer nitriding thing wafer, forms cavity below micro electronmechanical adjustable nitride resonance grating, finishes the integrated of unsettled miniature nano electrostatic driver and resonance grating:
(1) because the physical characteristics of High Resistivity Si is utilized isolation channel, realizes separating of first polarity zone and the second polarity zone, thereby distinguish the both positive and negative polarity of miniature nano electrostatic driver;
(2) apply voltage respectively in first polarity zone and the second polarity zone, utilize electrostatic attraction to drive the removable broach of miniature nanometer driver to the fixed fingers displacement, make spring structure generation deformation, thereby drive resonance grating construction stretch or reset, structural parameters such as the cycle of change resonance optical grating construction and duty are realized micro electronmechanical adjustable nitride resonance grating.
The present invention is based on the High Resistivity Si underlayer nitriding thing material, nitride material, especially gallium nitride material are compared near infrared with traditional silicon wafer material, particularly have good optical property at visible light wave range; Utilize the suitable resonance grating that develops near infrared and visible light wave range of high index of refraction difference between nitride material and the air, its optical property and material thickness and resonance grating structurally associated; Utilize particularly gallium nitride material favorable mechanical performance of nitride material, be fit to the miniature nano electrostatic driver of development; Make miniature nano electrostatic driver and resonance grating integrated, regulate and control structural parameters such as cycle of resonance grating and dutycycle by miniature nanometer driver, can reduce the influence that the resonance grating is subjected to structural parameters, increase the resonant bandwidth of resonance grating, improve the utilization ratio of resonance grating, cycle and resonance frequency that simultaneously can also minute adjustment resonance grating make the resonance optical grating construction more accurate.
The present invention uses unsettled nitride film thinning technique behind, can solve the etching difficult problem of top layer nitride device.By the behind attenuate, can obtain the nitride film of controllable thickness, form unsettled micro electronmechanical adjustable nitride resonance grating, satisfy the design requirement of nitride resonance grating.
Description of drawings
Fig. 1 is the micro electronmechanical adjustable nitride resonance grating synoptic diagram of High Resistivity Si substrate;
Fig. 2 is the schematic side view of the micro electronmechanical adjustable nitride resonance grating hanging structure of High Resistivity Si substrate;
Fig. 3 is the micro electronmechanical adjustable nitride harmonic light grid technique process flow diagram of High Resistivity Si substrate.
Have among the figure: the first polarity zone 1, the second polarity zone 2, fixed fingers 11, resonance optical grating construction 21, spring structure 22, removable broach 23, isolation channel 3.
Embodiment
Below in conjunction with accompanying drawing technical scheme of the present invention is described in further detail:
As shown in Figure 1, 2, the present invention has designed a kind of micro electronmechanical adjustable nitride harmonic light gate device, on the nitride layer of High Resistivity Si underlayer nitriding thing wafer, the isolation channel 3 that is provided with the first polarity zone 1, the second polarity zone 2, isolates the 1 and second polarity zone 2, first polarity zone; Utilize the physical characteristics of High Resistivity Si substrate and the structure function of isolation channel, first polarity zone and the second polarity zone are kept apart; The first polarity zone 1 is provided with fixed fingers 11, the second polarity zones 2 and is provided with resonance optical grating construction 21, spring structure 22 and the removable broach 23 that connects successively, removable broach 23 and the fixed fingers 11 relative settings of staggering.
Among a kind of embodiment of the present invention, fixed fingers 11, resonance optical grating construction 21, spring structure 22 and removable broach 23 are nanostructured.
Realize that carrier is High Resistivity Si underlayer nitriding thing wafer.Utilize the physical characteristics of High Resistivity Si and the design feature of isolation channel, realize first polarity zone 1 and the second polarity zone 2 structure and electrical on separate; Apply reverse voltage in the 1 and second polarity zone 2, first polarity zone, utilize electrostatic attraction to drive the removable broach 23 of miniature nano electrostatic driver to fixed fingers 11 displacements; Integrated by miniature nano electrostatic driver and resonance grating 21 utilizes duty that miniature nano electrostatic driver changes nitride resonance grating 21 cycle when, realizes the controlled of resonance grating 21 structures, thus the optical property of regulation and control device, wherein:
In the micro electronmechanical adjustable nitride harmonic light gate device, micro electronmechanical part refers to miniature nano electrostatic driver, and is unsettled fully with resonance grating 21 parts; Micro electronmechanical part comprises fixed fingers 11, removable broach 23 and spring structure 22;
Micro electronmechanical adjustable nitride device by isolation channel 3 with fixed fingers 11 and removable broach 23, spring structure 22, resonance grating 21 structurally with electrically on separate, utilize the physical characteristics of High Resistivity Si, and form the both positive and negative polarity of drivers in conjunction with isolation channel 3;
Micro electronmechanical adjustable nitride device utilizes electrostatic attraction, drive removable broach 23 to fixed fingers displacement 11, equidirectional deformation takes place in the displacement that drives spring structure 22 and removable broach 23, spring structure 22 is regulated and control its optical property together with the cycle of drive part control resonance grating 21 and increase or the recovery of dutycycle by the structural parameters that change resonance grating 21.
As shown in Figure 3, the present invention also provides the method with the micro electronmechanical adjustable nitride resonance grating of two-sided processing and preparing.The thickness of High Resistivity Si underlayer nitriding thing device layer determines that by growth conditions the thickness degree of freedom is less usually, and for design nitride resonance photonic device brings difficulty, the etching of thick film nitride processing simultaneously also is a great problem.Technical method provided by the invention can removal devices the High Resistivity Si substrate of below, solve the processing problems of unsettled nitride device, make micro electronmechanical nitride harmonic light gate device unsettled, the attenuate nitride layer makes its controllable thickness from behind, specifically comprises the steps:
1) carries out the polishing attenuate of High Resistivity Si substrate layer at High Resistivity Si underlayer nitriding thing wafer;
2) form mask layer at High Resistivity Si underlayer nitriding thing wafer, at the device architecture of the mask layer miniature nano electrostatic driver of definition and nitride resonance grating, the device architecture with miniature nano electrostatic driver and nitride resonance grating is transferred on the nitride layer of High Resistivity Si underlayer nitriding thing wafer from mask layer afterwards then;
3) remove remaining mask layer;
4) spin coating photoresist on nitride layer forms photoresist layer;
5) adopt photoetching technique, at photoresist layer definition isolation channel 3;
6) adopt three or five family's lithographic techniques, on nitride layer, isolation channel 3 is etched to the High Resistivity Si substrate;
7) remove remaining photoresist layer on the nitride layer;
8) spin coating one deck protection glue is used for protection device construction on nitride layer, and spin coating one deck photoresist on the High Resistivity Si substrate layer forms photoresist layer simultaneously;
9) use Alignment Process behind, the device on the nitride layer of location, concrete grammar is: adopt the method for photoetching, open the window corresponding with device position at the photoresist layer of High Resistivity Si substrate layer spin coating;
10) method of the dark silicon etching of employing, by the photoresist layer window that step 9) forms, etching High Resistivity Si substrate layer is until nitride layer;
11) adopt three or five family's lithographic technique etchings, by the opened window of step 10), continue etch nitride layer, separate with fixed fingers (11) until the removable broach of realization (23), and the separation of resonance optical grating construction (21);
12) remaining photoresist layer on the protection glue-line on the removal nitride layer and the High Resistivity Si substrate is realized micro electronmechanical turnable resonator grating.
In a kind of specific embodiment of the present invention, above-mentioned steps 2) and the mask layer in the step 3) be electron beam glue-line, step 2) in adopt ion beam bombardment method or three or five family's lithographic techniques, the device architecture of definition is transferred on the nitride layer from the electron beam glue-line.
As another kind of specific embodiment of the present invention, can be in conjunction with the nitride mask lithographic technique, in step 2) and 3) in mask layer be included in hafnia mask layer or the earth silicon mask layer that High Resistivity Si underlayer nitriding thing wafer forms, and the electron beam glue-line that forms at hafnia mask layer or earth silicon mask layer, step 2) in, define the device architecture of miniature nano electrostatic driver and nitride resonance grating earlier at the electron beam glue-line, adopt the method for ion beam bombardment method or reactive ion etching afterwards, the device architecture of miniature nano electrostatic driver and nitride resonance grating is transferred to hafnia mask layer or earth silicon mask layer from the electron beam glue-line, adopt ion beam bombardment method or three or five family's lithographic techniques then, the device architecture of definition is transferred on the nitride layer from hafnia mask layer or earth silicon mask layer.
Claims (6)
1. micro electronmechanical adjustable nitride resonance grating, it is characterized in that, on the nitride layer of High Resistivity Si underlayer nitriding thing wafer, be provided with the first polarity zone (1), the second polarity zone (2), the isolation channel (3) of isolating the described first polarity zone (1) and the second polarity zone (2), the described first polarity zone (1) is provided with fixed fingers (11), the described second polarity zone (2) is provided with the resonance optical grating construction (21) that connects successively, spring structure (22) and removable broach (23), the relative setting of staggering with fixed fingers (11) of described removable broach (23).
2. micro electronmechanical adjustable nitride resonance grating according to claim 1, it is characterized in that, on described High Resistivity Si underlayer nitriding thing wafer, adopt unsettled nitride film thinning technique behind, realize the adjustable micro electronmechanical adjustable nitride harmonic light gate device of nitride layer thickness.
3. micro electronmechanical adjustable nitride resonance grating according to claim 1 and 2 is characterized in that described fixed fingers (11), resonance optical grating construction (21), spring structure (22) and removable broach (23) are nanostructured.
4. two-sided job operation for preparing claim 1 or 2 described micro electronmechanical adjustable nitride resonance gratings is characterized in that this method may further comprise the steps:
1) carries out the behind at High Resistivity Si underlayer nitriding thing wafer and polish attenuate;
2) form mask layer at High Resistivity Si underlayer nitriding thing wafer, at the device architecture of the described mask layer miniature nano electrostatic driver of definition and nitride resonance grating, the device architecture with described miniature nano electrostatic driver and nitride resonance grating is transferred on the nitride layer of High Resistivity Si underlayer nitriding thing wafer from mask layer afterwards then;
3) remove remaining mask layer;
4) spin coating photoresist on nitride layer forms photoresist layer;
5) adopt photoetching technique, define isolation channel (3) at described photoresist layer;
6) adopt three or five family's lithographic techniques, on nitride layer, described isolation channel (3) is etched to the High Resistivity Si substrate;
7) remove remaining photoresist layer on the nitride layer;
8) spin coating one deck protection glue is used for protection device construction on nitride layer, and spin coating one deck photoresist on the High Resistivity Si substrate layer forms photoresist layer simultaneously;
9) use Alignment Process behind, the device on the nitride layer of location, concrete grammar is: adopt the method for photoetching, open the window corresponding with device position at the photoresist layer of High Resistivity Si substrate layer spin coating;
10) method of the dark silicon etching of employing, by the photoresist layer window that described step 9) forms, etching High Resistivity Si substrate layer is until nitride layer;
11) adopt ICP three or five family's lithographic technique etchings, by the opened window of described step (10), continue etch nitride layer, separate with fixed fingers (11) until the removable broach of realization (23), and the separation of resonance optical grating construction (21);
12) remaining photoresist layer on the protection glue-line on the removal nitride layer and the High Resistivity Si substrate is realized micro electronmechanical turnable resonator grating.
5. the two-sided job operation of the micro electronmechanical adjustable nitride resonance grating of preparation according to claim 4, it is characterized in that, described step 2) and the mask layer in the step 3) be the electron beam glue-line, step 2) adopts ion beam bombardment method or three or five family's lithographic techniques in, the device architecture of definition is transferred on the nitride layer from the electron beam glue-line.
6. the two-sided job operation of the micro electronmechanical adjustable nitride resonance grating of preparation according to claim 4, it is characterized in that, described step 2) and the mask layer in the step 3) be included in hafnia mask layer or the earth silicon mask layer that forms on the High Resistivity Si underlayer nitriding thing wafer, and the electron beam glue-line that forms at described hafnia mask layer or earth silicon mask layer, step 2) in, define the device architecture of miniature nano electrostatic driver and nitride resonance grating earlier at the electron beam glue-line, adopt the method for ion beam bombardment method or reactive ion etching afterwards, the device architecture of described miniature nano electrostatic driver and nitride resonance grating is transferred to hafnia mask layer or earth silicon mask layer from the electron beam glue-line, adopt ion beam bombardment method or ICP three or five family's lithographic techniques then, the device architecture of definition is transferred on the nitride layer from hafnia mask layer or earth silicon mask layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113075791A (en) * | 2021-03-22 | 2021-07-06 | 华中科技大学 | Terahertz modulator based on electrostatic drive pure silicon-based grating and preparation method |
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| JP2000114248A (en) * | 1998-10-01 | 2000-04-21 | Nec Corp | Method for etching silicon |
| CN102180440A (en) * | 2011-04-06 | 2011-09-14 | 北京大学 | Preparation method of nano-gap electrode in micro-nano electromechanical device |
| CN102602878A (en) * | 2011-12-26 | 2012-07-25 | 南京邮电大学 | Silicon substrate nitride based optical micro-electromechanical device and production method thereof |
| CN103185918A (en) * | 2013-03-18 | 2013-07-03 | 南京邮电大学 | Micro-electro-mechanical adjustable nitride resonant grating and preparation method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000114248A (en) * | 1998-10-01 | 2000-04-21 | Nec Corp | Method for etching silicon |
| CN102180440A (en) * | 2011-04-06 | 2011-09-14 | 北京大学 | Preparation method of nano-gap electrode in micro-nano electromechanical device |
| CN102602878A (en) * | 2011-12-26 | 2012-07-25 | 南京邮电大学 | Silicon substrate nitride based optical micro-electromechanical device and production method thereof |
| CN103185918A (en) * | 2013-03-18 | 2013-07-03 | 南京邮电大学 | Micro-electro-mechanical adjustable nitride resonant grating and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113075791A (en) * | 2021-03-22 | 2021-07-06 | 华中科技大学 | Terahertz modulator based on electrostatic drive pure silicon-based grating and preparation method |
| CN113075791B (en) * | 2021-03-22 | 2022-03-29 | 华中科技大学 | Terahertz modulator based on electrostatic drive pure silicon-based grating and preparation method |
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