CN103184527A - Lower furnace body of single crystal furnace with temperature measurement interfaces - Google Patents
Lower furnace body of single crystal furnace with temperature measurement interfaces Download PDFInfo
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- CN103184527A CN103184527A CN 201110455180 CN201110455180A CN103184527A CN 103184527 A CN103184527 A CN 103184527A CN 201110455180 CN201110455180 CN 201110455180 CN 201110455180 A CN201110455180 A CN 201110455180A CN 103184527 A CN103184527 A CN 103184527A
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- furnace body
- temperature measurement
- single crystal
- lower furnace
- interfaces
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Abstract
The invention relates to a lower furnace body of a single crystal furnace with temperature measurement interfaces, which belongs to the monocrystalline silicon production equipment technical field. The lower furnace body of the single crystal furnace with the temperature measurement interfaces is characterized by comprising the lower furnace body (1), three temperature measurement interfaces (2) are disposed on the side wall of the lower furnace body (1), three temperature measurement interfaces (2) are positioned on one flat surface, the adjacent two temperature measurement interfaces form two lines with centers of the flat surface for the temperature measurement interfaces, and the included angle of two lines is 120 DEG. According to the invention, three temperature measurement interfaces are opened on the side wall of the single crystal furnace, and are positioned at one flat surface, the adjacent two temperature measurement interfaces form two lines with centers of the flat surface for the temperature measurement interfaces, and the included angle of two lines is 120 DEG. The lower furnace body of the single crystal furnace has advantage of high measurement precision, and can guarantee the production quality of monocrystalline silicon.
Description
Technical field
The present invention relates to a kind of single crystal growing furnace lower furnace body with the thermometric interface, belong to the manufacturing equipment technical field of silicon single crystal.
Background technology
Silicon single crystal is the crystal with complete lattice structure, is a kind of good semiconductor material, is widely used in the manufacturing of semiconducter device and solar cell at present.Existing silicon single crystal producing apparatus is single crystal growing furnace, and it mainly comprises furnace bottom, lower furnace body, upper furnace body, upward bell, segregaion valve and secondary stove six major parts are formed.
Single crystal growing furnace in the past only is provided with a thermometric interface at the lower furnace body sidewall, but because temperature probe is to the installation site, angle, and the angle of rotation of itself all compares responsive, single temperature probe can't accurately be measured the lower furnace body internal temperature, measuring accuracy is relatively poor, causes the quality of silicon single crystal to be affected.
Summary of the invention
The objective of the invention is to overcome above-mentioned deficiency, a kind of measuring accuracy height is provided, the single crystal growing furnace lower furnace body of the band thermometric interface of energy bonding crystal silicon quality.
The object of the present invention is achieved like this:
The single crystal growing furnace lower furnace body of band thermometric interface of the present invention, it is characterized in that: it comprises the lower furnace body body, offer three thermometric interfaces on the sidewall of described lower furnace body body, described three thermometric interfaces are positioned at same plane, and adjacent two thermometric interfaces and its place planar central be wired to 120 ° the degree angles.
The single crystal growing furnace lower furnace body of this band thermometric interface has the following advantages:
The single crystal growing furnace lower furnace body of this band thermometric interface offers three thermometric interfaces at sidewall, these three thermometric interfaces are positioned at same plane, and adjacent two thermometric interfaces and its place planar central be wired to 120 ° the degree angles, after evenly being arranged on the lower furnace body sidewall, three thermometric interfaces jointly thermometric is carried out in lower furnace body inside, has higher measuring accuracy, the quality of production that can the bonding crystal silicon.
Description of drawings
Fig. 1 is the structural representation of the single crystal growing furnace lower furnace body of band thermometric interface of the present invention.
Among the figure: lower furnace body body 1, thermometric interface 2.
Embodiment
Referring to Fig. 1, a kind of single crystal growing furnace lower furnace body with the thermometric interface that the present invention relates to, comprise lower furnace body body 1, offer three thermometric interfaces 2 on the sidewall of described lower furnace body body 1, described three thermometric interfaces 2 are positioned at same plane, and adjacent two thermometric interfaces and its place planar central be wired to 120 ° the degree angles, jointly thermometric is carried out in lower furnace body inside after three thermometric interfaces evenly are arranged on the lower furnace body sidewall, has higher measuring accuracy, the quality of production that can the bonding crystal silicon.
Claims (1)
1. single crystal growing furnace lower furnace body with the thermometric interface, it is characterized in that: it comprises lower furnace body body (1), offer three thermometric interfaces (2) on the sidewall of described lower furnace body body (1), described three thermometric interfaces (2) are positioned at same plane, and adjacent two thermometric interfaces and its place planar central be wired to 120 ° the degree angles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110455180 CN103184527A (en) | 2011-12-31 | 2011-12-31 | Lower furnace body of single crystal furnace with temperature measurement interfaces |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110455180 CN103184527A (en) | 2011-12-31 | 2011-12-31 | Lower furnace body of single crystal furnace with temperature measurement interfaces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103184527A true CN103184527A (en) | 2013-07-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110455180 Pending CN103184527A (en) | 2011-12-31 | 2011-12-31 | Lower furnace body of single crystal furnace with temperature measurement interfaces |
Country Status (1)
| Country | Link |
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| CN (1) | CN103184527A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105088353A (en) * | 2014-05-04 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma reaction device and temperature monitor method thereof |
-
2011
- 2011-12-31 CN CN 201110455180 patent/CN103184527A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105088353A (en) * | 2014-05-04 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma reaction device and temperature monitor method thereof |
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Legal Events
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| PB01 | Publication | ||
| C05 | Deemed withdrawal (patent law before 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130703 |