CN103178169B - A kind of LED and preparation method thereof - Google Patents
A kind of LED and preparation method thereof Download PDFInfo
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- CN103178169B CN103178169B CN201110433441.7A CN201110433441A CN103178169B CN 103178169 B CN103178169 B CN 103178169B CN 201110433441 A CN201110433441 A CN 201110433441A CN 103178169 B CN103178169 B CN 103178169B
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Abstract
The invention provides a kind of LED, comprise the n-type gallium nitride layer of substrate and order growth over the substrate, luminescent layer and p-type InGaN/gallium nitride structure layer, the p-type gallium indium nitride layer that p-type gallium indium nitride layer, p-type gallium nitride layer and Mg doping that intrinsic gallium nitride layer, Mg doping that described p-type InGaN/gallium nitride structure layer comprises order growth increase gradually reduce gradually, described intrinsic gallium nitride layer is adjacent with luminescent layer.The present invention also provides the preparation method of described LED.In LED provided by the invention and preparation method thereof, utilize the InGaN/gallium nitride structure of Mg doping gradual change to replace traditional p-type gallium nitride layer as p-type layer, improve the external quantum efficiency of photoelectric device; Utilize the catalytic action of phosphide atom, make Mg atom replace Ga atom and form acceptor; Utilize the InGaN/gallium nitride structure of Mg doping gradual change well can balance the distribution in hole, improve the life-span of photoelectric device.
Description
Technical field
The invention belongs to semiconductor applications, particularly relate to a kind of LED and preparation method thereof.
Background technology
Gallium nitride (GaN) and ternary-alloy material thereof are widely used at the photoelectric device of short wavelength, and its material behavior receives much attention, and emphasis is the quantum efficiency and the photoelectric conversion efficiency that improve GaN material quality and LED.Traditional P type GaN material aspect is mainly due at MOCVD(metallorganic chemical vapor deposition, Metal-organic Chemical Vapor Deposition) formation of Mg-H complex compound in epitaxial process, Mg activation rate is reduced, produce high electrical resistance, cause epitaxial material to have semi-insulating character.For this high-resistance phenomenon, the epitaxial wafer after growth can be carried out thermal annealing to reduce the resistivity of p-type GaN, but transformation efficiency is not high.For high performance device, the formation of defect in conventional P type GaN epitaxy sheet (such as V-type defect or the dislocation that occurs because lattice does not mate in growth course) and cohesive process, the antistatic effect that can affect device is namely easily breakdown; Meanwhile, easily there is non-radiative recombination heating, not luminous, very adverse effect is produced to the life-span of photoelectric device.
Summary of the invention
The object of the invention is to solve epitaxial wafer growth pattern in prior art and disadvantageous technical problem is produced to the photoelectric device life-span, a kind of LED is provided, improves the life-span of photoelectric device, realize the high-performance of device.
The object of the invention is to be achieved through the following technical solutions:
A kind of LED, comprise the n-type gallium nitride layer of substrate and order growth over the substrate, luminescent layer and p-type InGaN/gallium nitride structure layer, the p-type gallium indium nitride layer that p-type gallium indium nitride layer, p-type gallium nitride layer and Mg doping that intrinsic gallium nitride layer, Mg doping that described p-type InGaN/gallium nitride structure layer comprises order growth increase gradually reduce gradually, described intrinsic gallium nitride layer is adjacent with luminescent layer.
The present invention also provides a kind of preparation method of LED, said method comprising the steps of:
S11, provide a substrate, over the substrate order growing n-type gallium nitride layer and luminescent layer;
S12, on luminescent layer, grow p-type InGaN/gallium nitride structure layer, specifically comprise the following steps:
S121, using trimethyl gallium as gallium source, ammonia as nitrogenous source, growth intrinsic gallium nitride layer;
S122, using trimethyl gallium as gallium source, two luxuriant magnesium are as Mg doped source, trimethyl indium as indium source, ammonia as nitrogenous source, keep the constant flow of trimethyl gallium, trimethyl indium and ammonia constant, the flow of two luxuriant magnesium is gradient to 1200sccm from 0, and intrinsic gallium nitride layer grows the p-type gallium indium nitride layer that Mg doping increases gradually;
S123, cut-out trimethyl indium source, the flow of two luxuriant magnesium keeps 1200sccm constant, and the p-type gallium indium nitride layer that Mg doping increases gradually grows p-type gallium nitride layer;
S124, open trimethyl indium source, the flow of two luxuriant magnesium is gradient to 0 from 1200sccm, p-type gallium nitride layer grows the p-type gallium indium nitride layer that Mg doping reduces gradually.
In LED provided by the invention and preparation method thereof, InGaN/the gallium nitride structure of Mg doping gradual change is utilized to replace traditional p-type gallium nitride layer as p-type layer, form growth alligatoring and alleviate the low phenomenon of the light extraction efficiency that causes because gallium nitride refractive index is high, namely the alligatoring effect of InGaN is conducive to bright dipping, improves the external quantum efficiency of photoelectric device; Utilize the catalytic action of phosphide atom, make Mg atom replace Ga atom and form acceptor, the doping substantially increasing Mg makes hole concentration be improved, thus obtains more effective p-type layer material; Utilize the InGaN/gallium nitride structure of Mg doping gradual change well can balance the distribution in hole, thus make hole can more fully with electron recombination, improve photoelectricity combined efficiency, effectively reduce contact resistance thus photoelectric device resistance is reduced.Therefore, described LED can improve the life-span of photoelectric device, realizes the high-performance of device.
Accompanying drawing explanation
Fig. 1 is the structural representation of LED provided by the invention.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The present inventor researchs and analyses, and for the luminous efficiency of photoelectric device, from the viewpoint of quantum efficiency, internal quantum efficiency and the light extraction efficiency of active area are depended in the brightness of LED.Light extracts the external quantum efficiency of impact, conventional LED is only a few percent, main cause is that conventional P type GaN refractive index is very high, this light that active area is sent has major part can not shine in air, but to multiple internal reflection be experienced, until absorbed by LED, increase the weight of the heat dissipation problem of photoelectric device, and then affected the internal quantum efficiency of photoelectric device.Therefore, improve light extraction efficiency and mainly consider that the light enabling incidence angle be greater than critical angle to come back in critical angle and to produce outgoing.
According to described analysis, please refer to shown in Fig. 1, the invention provides a kind of LED, comprise substrate 1 and the n-type gallium nitride layer 2 of order growth on described substrate 1, luminescent layer 3 and p-type InGaN/gallium nitride structure layer 4, the p-type gallium indium nitride layer 44 that p-type gallium indium nitride layer 42, p-type gallium nitride layer 43 and Mg doping that intrinsic gallium nitride layer 41, Mg doping that described p-type InGaN/gallium nitride structure layer 4 comprises order growth increase gradually reduce gradually, described intrinsic gallium nitride layer 41 adjoins with luminescent layer 3.
In LED provided by the invention, InGaN/the gallium nitride structure of Mg doping gradual change is utilized to replace traditional p-type gallium nitride layer as p-type layer, form growth alligatoring and alleviate the low phenomenon of the light extraction efficiency that causes because gallium nitride refractive index is high, namely the alligatoring effect of InGaN is conducive to bright dipping, improves the external quantum efficiency of photoelectric device; Utilize the catalytic action of phosphide atom, make Mg atom replace Ga atom and form acceptor, the doping substantially increasing Mg makes hole concentration be improved, thus obtains more effective p-type layer material; Utilize the InGaN/gallium nitride structure of Mg doping gradual change well can balance the distribution in hole, thus make hole can more fully with electron recombination, improve photoelectricity combined efficiency, effectively reduce contact resistance thus photoelectric device resistance is reduced.Therefore, described LED can improve the life-span of photoelectric device, realizes the high-performance of device.
As preferably execution mode, the thickness of described intrinsic gallium nitride layer 41 is less than or equal to 40 nanometers, the object growing described intrinsic gallium nitride layer 41 is the crystal mass obtaining better growth p-type layer, if the thickness of described intrinsic gallium nitride layer 41 is greater than 40 nanometers, the electric conductivity of p-type layer can be made to be deteriorated, thus to make whole LED overtension.
As preferably execution mode, the thickness of the p-type gallium indium nitride layer 42 that described Mg doping increases gradually is 50-120 nanometer, the object growing the p-type gallium indium nitride layer 42 that described Mg doping increases gradually is to utilize the effect of In to be conducive to Mg doping, promotes that Mg atom substitutes Ga atom; Utilize the effect of gathering of InGaN to form alligatoring simultaneously, be conducive to bright dipping.If the thickness of the p-type gallium indium nitride layer 42 that described Mg doping increases gradually is greater than 120 nanometers, the crystal mass of epitaxial loayer can be caused very poor, produce defect, affect the performance of device; If be less than 50 nanometers, the effect of alligatoring can be caused not obvious, do not play the effect of insert layer.
As preferably execution mode, the thickness of described p-type gallium nitride layer 43 is 10-40 nanometer, and the object growing described p-type gallium nitride layer 43 is to form with gallium indium nitride layer the change that can bring, can better bound hole.If the thickness of described p-type gallium nitride layer 43 is greater than 40 nanometers, can poor crystal quality be caused, form the heat dispersion that high impedance affects device simultaneously; If be less than 10 nanometers, can cause can not effective bound hole.
As preferably execution mode, the thickness of the p-type gallium indium nitride layer 44 that described Mg doping reduces gradually is 50-120 nanometer, the object growing the p-type gallium indium nitride layer 44 that described Mg doping reduces gradually is to utilize the effect of In to be conducive to Mg doping, promotes that Mg atom substitutes Ga atom; Utilize the effect of gathering of InGaN to form alligatoring simultaneously, be conducive to bright dipping.If the thickness of the p-type gallium indium nitride layer 44 that described Mg doping reduces gradually is greater than 120 nanometers, the crystal mass of epitaxial loayer can be caused very poor, produce defect, affect the performance of device; If be less than 50 nanometers, the effect of alligatoring can be caused not obvious, do not play the effect of insert layer.
As concrete execution mode, described p-type gallium indium nitride layer has following structure: In
xga
(1-x)n; Wherein, 0<x<1, described p-type gallium indium nitride layer is specially p-type gallium indium nitride layer 42 that Mg doping increases gradually and the p-type gallium indium nitride layer 44 that Mg doping reduces gradually, and described x is that indium is at structure I n
xga
(1-x)the span of content in N.In order to form uniform InGaN alligatoring region, improve quantum efficiency, consider the doping efficiency of Mg in p-type gallium indium nitride layer, described indium is at structure I n simultaneously
xga
(1-x)in N, the span of content is 0<x<1; Preferably, the optimum growh effect of mixing indium and temperature is further considered, described x=0.12.
As concrete execution mode, please refer to shown in Fig. 1, resilient coating 5 is formed between described substrate 1 and n-type gallium nitride layer 2, described resilient coating 5 specifically can be gallium nitride layer, the thickness of described resilient coating 5 can be 20-50 nanometer, stress can be discharged better thus, grow the measured gallium nitride material of matter.
As concrete execution mode, please refer to shown in Fig. 1, be formed with the gallium nitride layer 6 of undoped between described n-type gallium nitride layer 2 and resilient coating 5, particularly, the thickness of the gallium nitride layer 6 of described undoped is 1-4 micron; Described n-type gallium nitride layer 2 is for mixing the n-type gallium nitride layer of silicon, and its thickness is 0.5-2 micron, can obtain electron concentration better thus high, the N-shaped material that mobility is high.
As concrete execution mode, please refer to shown in Fig. 1, described luminescent layer 3 comprises multiple InGaN/gallium nitride unit, each InGaN/storied length of gallium nitride elementary layer.Particularly, each InGaN/gallium nitride unit comprises gallium indium nitride layer 31 and gallium nitride layer 32, described gallium indium nitride layer 31 and gallium nitride layer 32 stacked arrangement, the gallium indium nitride layer 31 of a stacked arrangement and gallium nitride layer 32 form the growth cycle of an InGaN/gallium nitride unit, and namely multiple InGaN/gallium nitride units alternately stacked arrangement forms described luminescent layer 3.Certainly, those skilled in the art it should be understood that described luminescent layer 3 also can adopt existing structure.
As concrete execution mode, in described each InGaN/gallium nitride unit, the thickness of InGaN 31 is 3-8 nanometer, and the thickness of gallium nitride 32 is 10-20 nanometer, can form quantum effect better thus, is conducive to the compound controlling electronics and hole.
As preferably execution mode, the number of described InGaN/gallium nitride unit is 5-10, namely InGaN/gallium nitride the unit of alternately laminated arrangement is 5-10, can be conducive to transition and the propagation of electronics thus better, be conducive to the abundant compound in electronics and hole; Particularly, in FIG, the InGaN/gallium nitride unit of described alternately laminated arrangement is 7.
As concrete execution mode, please refer to shown in Fig. 1, between described luminescent layer 3 and p-type InGaN/gallium nitride structure layer 4, growth has barrier layer 7; Particularly, described barrier layer 7 specifically can be aluminum gallium nitride, and the thickness on described barrier layer 7 can be 10-40 nanometer, can limit electronics thus better and arrives p layer and non-radiative recombination occurs, the radiation recombination efficiency of electronics is improved.
The present invention also provides a kind of preparation method of LED, said method comprising the steps of:
S11, provide a substrate, over the substrate order growing n-type gallium nitride layer and luminescent layer;
S12, on luminescent layer, grow p-type InGaN/gallium nitride structure layer, specifically comprise the following steps:
S121, using trimethyl gallium as gallium source, ammonia as nitrogenous source, growth intrinsic gallium nitride layer;
S122, using trimethyl gallium as gallium source, two luxuriant magnesium are as Mg doped source, trimethyl indium as indium source, ammonia as nitrogenous source, keep the constant flow of trimethyl gallium, trimethyl indium and ammonia constant, the flow of two luxuriant magnesium is gradient to 1200sccm from 0, and intrinsic gallium nitride layer grows the p-type gallium indium nitride layer that Mg doping increases gradually;
S123, cut-out trimethyl indium source, the flow of two luxuriant magnesium keeps 1200sccm constant, and the p-type gallium indium nitride layer that Mg doping increases gradually grows p-type gallium nitride layer;
S124, open trimethyl indium source, the flow of two luxuriant magnesium is gradient to 0 from 1200sccm, p-type gallium nitride layer grows the p-type gallium indium nitride layer that Mg doping reduces gradually.
In the preparation method of LED provided by the invention, InGaN/the gallium nitride structure of Mg doping gradual change is utilized to replace traditional p-type gallium nitride layer as p-type layer, form growth alligatoring and alleviate the low phenomenon of the light extraction efficiency that causes because gallium nitride refractive index is high, namely the alligatoring effect of InGaN is conducive to bright dipping, improves the external quantum efficiency of photoelectric device; Utilize the catalytic action of phosphide atom, make Mg atom replace Ga atom and form acceptor, the doping substantially increasing Mg makes hole concentration be improved, thus obtains more effective p-type layer material; Utilize the InGaN/gallium nitride structure of Mg doping gradual change well can balance the distribution in hole, thus make hole can more fully with electron recombination, improve photoelectricity combined efficiency, effectively reduce contact resistance thus photoelectric device resistance is reduced.Therefore, described LED can improve the life-span of photoelectric device, realizes the high-performance of device.
As concrete execution mode, in described step S11, institute's substrate can adopt sapphire well known in the art, and order growing n-type gallium nitride layer and luminescent layer can adopt method well known to those skilled in the art over the substrate.As preferred embodiment, between described substrate and n-type gallium nitride layer, be formed with resilient coating, between described n-type gallium nitride layer and resilient coating, be formed with the gallium nitride layer of undoped.Below will describe in detail its preparation method:
Adopt sapphire as substrate, by MOCVD technology utilization ammonia (NH
3) first nitrogen treatment is carried out to Sapphire Substrate, namely specifically can temperature be 950-1100 spend time, pass into the NH that duration is 100-170 second
3, make it clear up substrate surface; Then 500-600 degree is reduced the temperature to, using trimethyl gallium (TMGa) as gallium source, ammonia (NH
3) as nitrogenous source, deposit gallium nitride (GaN) resilient coating of 20-50 nanometer thickness on a sapphire substrate; Finally post-depositional substrate is maintained 200-300 second under temperature 1000-1100 degree, complete high-temperature process, so far namely complete the preparation of resilient coating.
Temperature be 700-900 spend time, using trimethyl gallium (TMGa) as gallium source, ammonia (NH
3) as nitrogenous source, growing the gallium nitride layer of undoped on the buffer layer, its thickness is 1-4 micron; Then temperature be 1000-1100 spend time, using trimethyl gallium (TMGa) as gallium source, ammonia (NH
3) as nitrogenous source, silane (SiH
4) as silicon source, on the gallium nitride layer of undoped, the n-type gallium nitride layer of silicon is mixed in growth, and its thickness is 0.5-2 micron.Preferably, the thickness of the gallium nitride layer of described undoped is 2 microns, and the thickness mixing the n-type gallium nitride layer of silicon is 1 micron.
As preferred embodiment, described luminescent layer comprises multiple InGaN/gallium nitride unit, each InGaN/storied length of gallium nitride elementary layer; Wherein, each InGaN/gallium nitride unit comprises gallium indium nitride layer and gallium nitride layer, described gallium indium nitride layer and gallium nitride layer stacked arrangement, the gallium indium nitride layer of a stacked arrangement and gallium nitride layer form the growth cycle of an InGaN/gallium nitride unit, and namely multiple InGaN/gallium nitride units alternately stacked arrangement forms described luminescent layer.Concrete preparation method, temperature be 700-800 spend time, using trimethyl indium (TMin) be indium source, triethyl-gallium (TEGa) as gallium source, ammonia (NH
3) as nitrogenous source, the n-type gallium nitride layer of mixing silicon growing one deck InGaN (InGaN), its thickness is 3-8 nanometer; Then cut off trimethyl indium (TMin) indium source, gallium indium nitride layer grows one deck gallium nitride (GaN), its thickness is 10-20 nanometer, and described gallium indium nitride layer and gallium nitride layer form a growth cycle, forms described InGaN/gallium nitride unit; So move in circles, form the InGaN/gallium nitride unit of multiple stacked arrangement, the number of described InGaN/gallium nitride unit is generally 5-10.Preferably, the thickness of described gallium indium nitride layer is 5 nanometers, the thickness of gallium nitride layer is 12 nanometers, the number 7 of InGaN/gallium nitride unit, namely forms [InGaN/GaN]/[InGaN/GaN]/[InGaN/GaN]/[InGaN/GaN]/[InGaN/GaN]/[InGaN/GaN]/[InGaN/GaN].
As preferred embodiment, on described luminescent layer, growth has barrier layer, and described barrier layer specifically can be aluminum gallium nitride, can limit electronics thus better and arrives p layer and non-radiative recombination occurs, the radiation recombination efficiency of electronics is improved.Concrete preparation method, temperature be 900-950 spend time, using triethyl-gallium (TEGa) as gallium source, trimethyl aluminium (TMAl) is aluminium source, ammonia (NH
3) as nitrogenous source, growing aluminum nitride gallium layer (AlGaN) on the light-emitting layer, the time of growth is 50-200 second, and the thickness of described aluminum gallium nitride is 10-40 nanometer.Preferably, described temperature is 920 degree, and the time of growth is 150 seconds, and the thickness of growth is 30 nanometers.
As concrete execution mode, the preparation method growing p-type InGaN/gallium nitride structure layer in described step S12 on luminescent layer is:
In described step S121, using trimethyl gallium (TMGa) as gallium source, ammonia (NH
3) as nitrogenous source, temperature be 800-860 spend time, grow intrinsic gallium nitride layer over the barrier layer, the time of growth is less than or equal to 200 seconds, and the thickness of growth is less than or equal to 40 nanometers; Growth intrinsic gallium nitride layer, be transitioned into growth p-type layer after being equivalent to luminescent layer, its object is to the crystal mass obtaining better growth p-type, the growth thickness of described intrinsic gallium nitride layer can not be too thick, otherwise the poor electric conductivity of p-type layer can be made, thus make whole LED overtension.As preferred embodiment, the temperature of described growth is 820 degree, and the time is 50 seconds, and thickness is 10 nanometers.
In described step S122, using trimethyl gallium (TMGa) as gallium source, two luxuriant magnesium (Cp
2mg) as Mg doped source, trimethyl indium (TMIn) as indium source, ammonia (NH
3) as nitrogenous source, temperature be 750-850 spend time, keep the constant flow of trimethyl gallium, trimethyl indium and ammonia constant, the flow of two luxuriant magnesium is gradient to 1200sccm from 0, intrinsic gallium nitride layer grows the p-type gallium indium nitride layer that Mg doping increases gradually, the time of growth is 200-600 second, and the thickness of growth is 50-120 nanometer.The object growing the p-type gallium indium nitride layer that described Mg doping increases gradually is to utilize the effect of In to be conducive to Mg doping, promotes that Mg atom substitutes Ga atom; Utilize the effect of gathering of InGaN to form alligatoring simultaneously, be conducive to bright dipping.If the thickness of the p-type gallium indium nitride layer 42 that described Mg doping increases gradually is greater than 120 nanometers, the crystal mass of epitaxial loayer can be caused very poor, produce defect, affect the performance of device; If be less than 50 nanometers, the effect of alligatoring can be caused not obvious, do not play the effect of insert layer.Wherein, the flow of described trimethyl gallium is less than or equal to 75sccm, and the flow of trimethyl indium is less than or equal to 200sccm, and the flow of ammonia is less than or equal to 35000sccm; Described two luxuriant magnesium (Cp
2mg) as doped source, its flow is gradient to 1200sccm by 0, and therefore the content of Mg also increases gradually, and sets its flow gradual change, being also to reach best doping efficiency, improving hole concentration; Meanwhile, the maximum of described doping is set in 1200sccm, mainly because if doping crosses conference cause that surface topography is poor, leakage current is large.As preferred embodiment, the temperature of described growth is 820 degree, and the time is 450 seconds, and thickness is 100 nanometers.
As concrete execution mode, the p-type gallium indium nitride layer that described Mg doping increases gradually has following structure: In
xga
(1-x)n; Wherein, 0<x<1, described x are that indium is at structure I n
xga
(1-x)the span of content in N.In order to form uniform InGaN alligatoring region, improve quantum efficiency, consider the doping efficiency of Mg in p-type gallium indium nitride layer, described indium is at structure I n simultaneously
xga
(1-x)in N, the span of content is 0<x<1; Preferably, further consider the optimum growh effect of mixing indium and temperature, described x=0.12, be specially 820 degree time, the best mixes indium value x=0.12.
In described step S123, cut off trimethyl indium (TMIn) source, two luxuriant magnesium (Cp
2mg) flow keeps 1200sccm constant, temperature be 850-950 spend time, the p-type gallium indium nitride layer that Mg doping increases gradually grows p-type gallium nitride (p-GaN) layer; The time of described growth is 50-200 second, and the thickness of growth is 10-40 nanometer, and the object growing described p-type gallium nitride layer 43 is to form with gallium indium nitride layer the change that can bring, can better bound hole.If the thickness of described p-type gallium nitride layer 43 is greater than 40 nanometers, can poor crystal quality be caused, form the heat dispersion that high impedance affects device simultaneously; If be less than 10 nanometers, can cause can not effective bound hole.In order to obtain better crystal mass, as preferred embodiment, the temperature of described growth is 910 degree, and the time is 150 seconds, and thickness is 30 nanometers.
S124, open trimethyl indium (TMIn) source, by two luxuriant magnesium (Cp
2mg) flow is gradient to 0 from 1200sccm, temperature be 750-850 spend time, p-type gallium nitride layer grows the p-type gallium indium nitride layer that Mg doping reduces gradually, and the time of growth is 200-600 second, and the thickness of growth is 50-120 nanometer.The object growing the p-type gallium indium nitride layer 44 that described Mg doping reduces gradually is to utilize the effect of In to be conducive to Mg doping, promotes that Mg atom substitutes Ga atom; Utilize the effect of gathering of InGaN to form alligatoring simultaneously, be conducive to bright dipping.If the thickness of the p-type gallium indium nitride layer 44 that described Mg doping reduces gradually is greater than 120 nanometers, the crystal mass of epitaxial loayer can be caused very poor, produce defect, affect the performance of device; If be less than 50 nanometers, the effect of alligatoring can be caused not obvious, do not play the effect of insert layer.Wherein, the flow of described trimethyl gallium is less than or equal to 75sccm, and the flow of trimethyl indium is less than or equal to 200sccm, and the flow of ammonia is less than or equal to 35000sccm; Described two luxuriant magnesium (Cp
2mg) as doped source, its flow is gradient to 0 by 1200sccm, and therefore the content of Mg also reduces gradually, and sets its flow gradual change, being also to reach best doping efficiency, improving hole concentration; Meanwhile, the maximum of described doping is set in 1200sccm, mainly because if doping crosses conference cause that surface topography is poor, leakage current is large.As preferred embodiment, the temperature of described growth is 820 degree, and the time is 450 seconds, and thickness is 100 nanometers.
As concrete execution mode, the p-type gallium indium nitride layer that described Mg doping reduces gradually has following structure: In
xga
(1-x)n; Wherein, 0<x<1, described x are that indium is at structure I n
xga
(1-x)the span of content in N.In order to form uniform InGaN alligatoring region, improve quantum efficiency, consider the doping efficiency of Mg in p-type gallium indium nitride layer, described indium is at structure I n simultaneously
xga
(1-x)in N, the span of content is 0<x<1; Preferably, further consider the optimum growh effect of mixing indium and temperature, described x=0.12, be specially 820 degree time, the best mixes indium value x=0.12.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (20)
1. a LED, it is characterized in that, comprise the n-type gallium nitride layer of substrate and order growth over the substrate, luminescent layer and p-type InGaN/gallium nitride structure layer, the p-type gallium indium nitride layer that p-type gallium indium nitride layer, p-type gallium nitride layer and Mg doping that intrinsic gallium nitride layer, Mg doping that described p-type InGaN/gallium nitride structure layer comprises order growth increase gradually reduce gradually, described intrinsic gallium nitride layer is adjacent with luminescent layer.
2. LED according to claim 1, is characterized in that, the thickness of described intrinsic gallium nitride layer is less than or equal to 40 nanometers.
3. LED according to claim 1, is characterized in that, the thickness of the p-type gallium indium nitride layer that described Mg doping increases gradually is 50-120 nanometer.
4. LED according to claim 1, is characterized in that, the thickness of described p-type gallium nitride layer is 10-40 nanometer.
5. LED according to claim 1, is characterized in that, the thickness of the p-type gallium indium nitride layer that described Mg doping reduces gradually is 50-120 nanometer.
6. LED according to claim 1, is characterized in that, described p-type gallium indium nitride layer has following structure: In
xga
(1-x)n; Wherein, 0<x<1.
7. LED according to claim 6, is characterized in that, described x=0.12.
8. LED according to claim 1, is characterized in that, is formed with resilient coating between described substrate and n-type gallium nitride layer.
9. LED according to claim 8, is characterized in that, is formed with the gallium nitride layer of undoped between described n-type gallium nitride layer and resilient coating.
10. LED according to claim 1, is characterized in that, described luminescent layer comprises multiple InGaN/gallium nitride unit, each InGaN/storied length of gallium nitride elementary layer.
11. LED according to claim 10, is characterized in that, in described each InGaN/gallium nitride unit, the thickness of InGaN is 3-8 nanometer, and the thickness of gallium nitride is 10-20 nanometer.
12. LED according to claim 10, is characterized in that, the number of described InGaN/gallium nitride unit is 5-10.
13. LED according to claim 1, is characterized in that, between described luminescent layer and p-type InGaN/gallium nitride structure layer, growth has barrier layer.
The preparation method of 14. 1 kinds of LED, is characterized in that, said method comprising the steps of:
S11, provide a substrate, over the substrate order growing n-type gallium nitride layer and luminescent layer;
S12, on luminescent layer, grow p-type InGaN/gallium nitride structure layer, specifically comprise the following steps:
S121, using trimethyl gallium as gallium source, ammonia as nitrogenous source, growth intrinsic gallium nitride layer;
S122, using trimethyl gallium as gallium source, two luxuriant magnesium are as Mg doped source, trimethyl indium as indium source, ammonia as nitrogenous source, keep the constant flow of trimethyl gallium, trimethyl indium and ammonia constant, the flow of two luxuriant magnesium is gradient to 1200sccm from 0, and intrinsic gallium nitride layer grows the p-type gallium indium nitride layer that Mg doping increases gradually;
S123, cut-out trimethyl indium source, the flow of two luxuriant magnesium keeps 1200sccm constant, and the p-type gallium indium nitride layer that Mg doping increases gradually grows p-type gallium nitride layer;
S124, open trimethyl indium source, the flow of two luxuriant magnesium is gradient to 0 from 1200sccm, p-type gallium nitride layer grows the p-type gallium indium nitride layer that Mg doping reduces gradually.
The preparation method of 15. LED according to claim 14, is characterized in that, in described step S121, the condition of described growth is, temperature 800-860 degree, the time is less than or equal to 200 seconds.
The preparation method of 16. LED according to claim 14, is characterized in that, in described step S122, the condition of described growth is, temperature 750-850 degree, time 200-600 second.
The preparation method of 17. LED according to claim 14, it is characterized in that, in described step S122, the flow of described trimethyl gallium is less than or equal to 75sccm, the flow of trimethyl indium is less than or equal to 200sccm, and the flow of ammonia is less than or equal to 35000sccm.
The preparation method of 18. LED according to claim 14, is characterized in that, in described step S123, the condition of described growth is, temperature 850-950 degree, time 50-200 second.
The preparation method of 19. LED according to claim 14, is characterized in that, in described step S124, the condition of described growth is, temperature 750-850 degree, time 200-600 second.
The preparation method of 20. LED according to claim 14, is characterized in that, the p-type gallium indium nitride layer grown in described step S122 and step S124 has following structure: In
xga
(1-x)n; Wherein, 0<x<1.
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