CN103178152B - The manufacture method of solar cells made of crystalline silicon - Google Patents
The manufacture method of solar cells made of crystalline silicon Download PDFInfo
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- CN103178152B CN103178152B CN201110436044.5A CN201110436044A CN103178152B CN 103178152 B CN103178152 B CN 103178152B CN 201110436044 A CN201110436044 A CN 201110436044A CN 103178152 B CN103178152 B CN 103178152B
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Abstract
A kind of manufacture method of solar cells made of crystalline silicon, prior to the first surface of silicon metal base material, barrier layer unit is set, barrier layer unit comprises by the barrier layer that forms of silica of doping V group element and at least separator that is made up of silica of one deck, again from silicon metal base material second surface doped with boron, barrier layer stops that boron enters this first surface, and make silicon metal base material form p-type layer body from second surface, come again, optionally remove barrier layer unit, finally, in this silicon metal base material first surface, n-layer body is formed to the doping of this silicon metal base material.The present invention utilizes barrier layer to stop boron diffusion, makes it cannot enter silicon metal base material from the second surface of silicon metal base material, with the solar cells made of crystalline silicon of obtained stability of characteristics.
Description
Technical field
The present invention relates to a kind of manufacture method of solar cell, particularly relate to a kind of manufacture method of solar cells made of crystalline silicon.
Background technology
Transform light energy is mainly that electric energy is for follow-up by solar cell.And at present solar cell with solar cells made of crystalline silicon, non-crystal silicon solar cell for main flow.Wherein, solar cells made of crystalline silicon has various structures, wherein a kind of structure example as shown in Figure 1, comprises a main body 11, anti-reflecting layer 15 that n-layer body 13, two layers that p-type layer body 12 that one deck is formed at this main body 11 end face, one deck are formed at this main body 11 bottom surface is formed at this p-type layer body 12 and this n-layer body 13 surface respectively and an electrode unit 14 be electrically connected with this p-type layer body 12 and this n-layer body 13.
When solar cell absorbs the luminous energy from the external world, electronics transits to conduction band from valence band and produces electron hole pair, and via the electric field that the exhaustion region of pn junction (pn junction) is formed, electronics is drawn toward this n-layer body 13, hole is drawn toward this p-type layer body 12 and forms potential, and then be electric energy by transform light energy, and electric energy is sent to the external world via this electrode unit 14.
Consult Fig. 2, the manufacture method of current solar cells made of crystalline silicon mainly first prepares a silicon metal base material 16, and this silicon metal base material 16 has a first surface 161 and a second surface 162 contrary with this first surface 161.
Then, on the first surface 161 of this silicon metal base material 16, form one deck resilient coating 20, then become this p-type layer body 12 from this second surface 162 doped with boron.
Come again, remove the resilient coating 20 of the first surface 161 being arranged at this silicon metal base material 16, and another resilient coating 20 is set in the second surface 162 of this silicon metal base material 16.
Continue, to adulterate the such as V group element such as phosphorus or arsenic and form this n-layer body 13 from the first surface 161 of this silicon metal base material 16, and removing the resilient coating 20 be positioned on the second surface 162 of this silicon metal base material 16 after doping, then this silicon metal base material 16 does not become the region of p-type layer body 12 or n-layer body 13 for this main body 11.
Finally, surface respectively at this p-type layer body 12 and this n-layer body 13 forms first electrode 141 and second electrode 142 and forms this electrode unit 14, and do not form the region formation anti-reflecting layer 15 of electrode unit 14 respectively at this p-type layer body 12 and this n-layer body 13, thus this solar cells made of crystalline silicon obtained; Wherein, with the structure of silica, this resilient coating 20 tentatively stops that boron enters this silicon metal base material 16, or reduce the diffusion of boron from this silicon metal base material 16 dissipation.But, if the diffusion probability for further reducing boron, the thickness of this resilient coating 20 can only be increased passively, but this also increases more material cost and Production Time.Therefore, how making the probability efficiently suppressing boron to spread in the process of solar cells made of crystalline silicon, is that industry continues one of target studied.
Summary of the invention
The object of this invention is to provide a kind of manufacture method that can limit the solar cells made of crystalline silicon of boron diffusion.
The manufacture method of solar cells made of crystalline silicon of the present invention, comprises: a step a, a step b, a step c and a steps d.
This step a arranges a barrier layer unit in a first surface of a silicon metal base material, wherein, this barrier layer unit comprises the barrier layer that one deck is main material with the silica of the V group element that adulterates, and at least one deck take silica as the separator of main material, the second surface doped with boron of this step b in this silicon metal base material in contrast to this first surface, this barrier layer stops boron, and make this silicon metal base material form one deck p-type layer body from this second surface to this direction, barrier layer, this step c optionally removes the predetermined structure of this barrier layer unit, this steps d is adulterated in this first surface to this silicon metal base material, and make this silicon metal base material form one deck n-layer body from this first surface to this second surface direction.
Preferably, the manufacture method of aforementioned crystalline silicon solar cell, wherein this barrier layer unit of this step a comprises the separator that two take silica as main material, and described separator and this barrier layer interlock stacked.
Preferably, the manufacture method of aforementioned crystalline silicon solar cell, wherein, this step a sequentially arranges this barrier layer and one deck separator and forms this barrier layer unit on this silicon metal base material.
Preferably, the manufacture method of aforementioned crystalline silicon solar cell, wherein, this step c removes separator and the barrier layer of this barrier layer unit.
Preferably, the manufacture method of aforementioned crystalline silicon solar cell, wherein, this steps d is before adulterating to this silicon metal base material, an auxiliary barrier layer unit is formed prior to the second surface of this silicon metal base material, this auxiliary barrier layer unit comprise one deck with the silica of the N-shaped supplementary barrier layer that is main material and at least one deck take silica as the auxiliary separator of main material, and after doping, remove this auxiliary barrier layer unit.
Preferably, the manufacture method of aforementioned crystalline silicon solar cell, wherein, this steps d arranges two layers of auxiliary separator in this silicon metal base material and this auxiliary barrier layer unit of stacked formation that interlocks with this supplementary barrier layer.
Preferably, the manufacture method of aforementioned crystalline silicon solar cell, wherein, this steps d arranges one deck prior to this silicon metal base material and assists separator, then arranges supplementary barrier layer on this auxiliary separator, and forms this auxiliary barrier layer unit.
Preferably, the manufacture method of aforementioned crystalline silicon solar cell, wherein, the manufacture method of this solar cells made of crystalline silicon also comprises a step e after this steps d, and this step e forms an electrode unit be electrically connected with this p-type layer body and this n-layer body.
Preferably, the manufacture method of aforementioned crystalline silicon solar cell, wherein, this step c removes this separator and this barrier layer from this barrier layer unit farthest away from the layer body of this silicon metal base material, and the layer at least leaving the predetermined thickness of this separator be connected with this silicon metal base material forms one deck anti-reflecting layer.
Preferably, the manufacture method of aforementioned crystalline silicon solar cell, wherein, this steps d is before adulterating to this silicon metal base material, arrange one prior to the second surface of this silicon metal base material to be interlocked the stacked auxiliary barrier layer unit formed by the two layers of supplementary barrier layer that take silica as main material with the auxiliary separator becoming the silica of N-shaped to be main material and one deck, and this auxiliary separator and this supplementary barrier layer is removed from this auxiliary barrier layer unit farthest away from the layer body of this silicon metal base material after doping, and the layer at least leaving the predetermined thickness of the auxiliary separator be connected with this silicon metal base material forms one deck anti-reflecting layer.
Preferably, the manufacture method of aforementioned crystalline silicon solar cell, wherein, this steps d is before adulterating to this silicon metal base material, prior to the second surface of this silicon metal base material arrange one sequentially by one deck with silica be the supplementary barrier layer of main material and one deck with the stacked auxiliary barrier layer unit formed of the auxiliary separator becoming the silica of N-shaped to be main material, and after doping, remove this auxiliary barrier layer unit.
Beneficial effect of the present invention is: this barrier layer unit covers the second surface of this silicon metal base material, make boron cannot enter this silicon metal base material from the second surface of this silicon metal base material, and maintain original characteristic of semiconductor of this silicon metal base material this barrier region contiguous.
Accompanying drawing explanation
Fig. 1 is a cross-sectional schematic, and a solar cells made of crystalline silicon is described;
Fig. 2 mono-cross-sectional schematic is the manufacture method of solar cells made of crystalline silicon in the past;
Fig. 3 is a flow chart, and manufacture method one first preferred embodiment of solar cells made of crystalline silicon of the present invention is described;
Fig. 4 mono-cross-sectional schematic, illustrates this first preferred embodiment of the present invention;
Fig. 5 is a flow chart, and the step 34 being illustrated in the manufacture method of solar cells made of crystalline silicon of the present invention also first makes an auxiliary barrier layer unit;
Fig. 6 is a cross-sectional schematic, and the present invention one second preferred embodiment is described;
Fig. 7 is a cross-sectional schematic, and the present invention 1 the 3rd preferred embodiment is described;
Fig. 8 is a cross-sectional schematic, and the present invention 1 the 4th preferred embodiment is described;
Fig. 9 is a cross-sectional schematic, and the present invention 1 the 5th preferred embodiment is described;
Figure 10 is a flow chart, and the present invention 1 the 6th preferred embodiment is described;
Figure 11 is a cross-sectional schematic, and the 6th preferred embodiment is described.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
Consult Fig. 3, Fig. 4, the first surface 161 that one first preferred embodiment of the manufacture method of solar cells made of crystalline silicon of the present invention mainly comprises the silicon metal base material 16 that a step 31-is formed in a silicon metal arranges a barrier layer unit 5, wherein, this barrier layer unit 5 comprise one deck by the silica of the V group element that adulterates be the barrier layer 52 that forms of main material and at least one deck be that main material is formed and stacked separator 51 staggered with this 52 one-tenth, barrier layer by silica, the second surface 162 of one step 32-in this silicon metal base material 16 in contrast to this first surface 161 to this direction, barrier layer 52 to this silicon metal base material 16 doped with boron, this barrier layer 52 stops boron, and make this silicon metal base material 16 form one deck p-type layer body 12 from this second surface 162 to this direction, barrier layer 52, one step 33-optionally removes the predetermined structure of this barrier layer unit 5, one step 34-adulterates to this silicon metal base material 16 in the first surface 161 of this silicon metal base material 16 to this second surface 162 direction, and make this silicon metal base material 16 form one deck n-layer body 13 from this first surface 161 to this second surface 162 direction and a step 35-forms an electrode unit 14 be electrically connected with this p-type layer body 12 and this n-layer body 13.
Below the first preferred embodiment more careful explanation should be given again.
First, this step 31 first prepares a silicon metal base material 16 formed with silicon metal, and this silicon metal base material 16 can be selected from p-type semiconductor, essential type semiconductor or n-type semiconductor.This silicon metal base material 16 has this first surface 161 and is positioned at the second surface 162 of this first surface 161 opposition side, and this first surface 161 of alligatoring and this second surface 162, because the surface after alligatoring belongs to micro-structural, so still represent with plane in the drawings.
Then, this barrier layer unit 5 is formed: form one deck separator 51 prior to this first surface 161 with chemical vapour deposition technique (CVD) or physical vaporous deposition (PVD) in this first surface 161, also the mode of spin-on deposition (SOD) silica solution can be utilized to form this separator 51, then, again on this separator 51 similarly with chemical vapour deposition technique (CVD), physical vaporous deposition (PVD), or the mode of spin-on deposition (SOD) silica solution forms one deck silicon oxide layer body; Continue, plant with ion cloth again, thermal diffusion or N-shaped element doping is entered this silicon oxide layer body by isoionic mode or rotary coating, containing the silica gel of V group element or solution, and forms the barrier layer 52 be made up of the silica of doping V group element on this silicon oxide layer body.
Wherein, N-shaped element is selected from nitrogen, phosphorus or Shen Deng VA race element.Come again, form the separator 51 that one deck is formed with silica in the surface on this barrier layer 52 again.Then in this first preferred embodiment, this barrier layer unit 5 has two layers of separator 51 and one deck barrier layer 52, and described separator 51 and this barrier layer 52 interlaced with each other stacked.
The separator 51 be folded between this first surface 161 and this barrier layer 52 can prevent the N-shaped Elements Diffusion in this barrier layer 52 from entering this silicon metal base material 16, and is formed at outermost separator 51 N-shaped Elements Diffusion in this barrier layer 52 can be avoided to extraneous.
Also it should be noted that, if the mode Doped n-type element of planting with ion cloth and form this barrier layer 52, then before ion cloth is planted, layer of oxide layer need be formed with the region near the second surface 162 avoiding adulterated this silicon metal base material 16 of N-shaped element pollution prior to this second surface 162, and after ion cloth is planted, the oxide layer of this second surface 162 be removed; If use mode or isoionic mode Doped n-type element in this silicon oxide layer body of thermal diffusion with such as boiler tube, then after Doped n-type element completes, second surface 162 in this silicon metal base material 16 removes the region of polluting by N-shaped doping with wet etching or the mode of grinding, and maintain this second surface 162 and do not mix dye by N-shaped element for the mode of the character of original silicon metal, the method is familiar with by those skilled in the art, no longer adds to repeat at this.
Continue, carry out this step 32, second surface 162 in this silicon metal base material 16 is planted or the mode doped with boron of thermal diffusion to the direction of this first surface 161 with ion cloth, and makes this silicon metal base material 16 form the p-type layer body 12 in one deck this second surface 162 region contiguous to the direction of this first surface 161 from this second surface 162.
Come again, carry out this step 33, after the p-type layer body 12 forming this silicon metal base material 16, utilize plasma dry etch, carry out Wet-type etching there is the high etching solution of etching selectivity between this silicon metal base material 16 and this barrier layer unit 5, or in the mode of grinding, barrier layer unit 5 on the first surface 161 of this silicon metal base material 16 is removed, and leaves the silicon metal base material 16 being formed with p-type layer body 12, and this p-type layer body 12 is positioned at the region of this second surface 162 contiguous.
Continue, carry out this step 34, first surface 161 in this silicon metal base material 16 is planted or the mode Doped n-type element of thermal diffusion towards the direction of this second surface 162 with ion cloth, and make this silicon metal base material 16 from this first surface 161 towards the direction of this second surface 162, namely the region of this first surface 161 contiguous forms one deck n-layer body 13, then this silicon metal base material 16 divides into the p-type layer body 12, n-layer body 13 and this main body 11 of not adulterated that are formed after doping.
Finally, carry out this step 35, surface respectively at this p-type layer body 12 and this n-layer body 13 arranges first electrode 141 and second electrode 142, and form the electrode unit 14 be electrically connected with this p, n layer body 12,13, thus obtained this solar cells made of crystalline silicon (as shown in Figure 1).
Preferably; the anti-reflecting layer 15 of layer of transparent also can be set in the surface that this p-type layer body 12 is exposed with this n-layer body 13 respectively; and this anti-reflecting layer 15 also can be used as protective layer; and by this p-type layer body 12 and this n-layer body 13 and extraneous aqueous vapor or impurities; and this two anti-reflecting layer 15 is normally formed with the material of transparent light-permeable, such as silica or silicon nitride.
The boron element energy filled in needed for the structural void between silica is 2.95 electron-volts, and the N-shaped element being selected from nitrogen, phosphorus or the arsenic energy required for structural void filled between silica is 0.7 electron-volt to 2.59 electron-volts, then N-shaped element to fill in the structural void of silicon oxide layer body required energy and is starkly lower than the energy needed for structural void that boron element fills in silicon oxide layer body, so comparatively boron element is easier to appearance and fills out in silica; Therefore, when nitrogen, phosphorus or arsenic have pre-existed in this barrier layer 52, then boron element has more not easily passed this barrier layer 52 and has entered this silicon metal base material 16, and then avoids the region of this silicon metal base material 16 this first surface 161 contiguous to be subject to the doping of boron element.
Moreover, due to this separator 51 sandwiched between this barrier layer 52 and this silicon metal base material 16, N-shaped Elements Diffusion in this barrier layer 52 then can be avoided to this silicon metal base material 16, and be arranged in the N-shaped Elements Diffusion extremely external world that outermost separator 51 also can avoid this barrier layer 52 in this barrier layer unit 5, even be the second surface 162 entering this silicon metal base material 16 after diffusing to the external world again.
The present invention first preferred embodiment utilizes the doping on this barrier layer 52 to fill the energy N-shaped element low compared with boron in structural void, and then keeps the region of this silicon metal base material 16 this first surface 161 contiguous can not be subject to the pollution of boron element.
In addition, this barrier layer unit 5 not only has this barrier layer 52 as this first preferred embodiment and is folded in this two separator 51, depending on this barrier layer unit 5 of demand also can be have separator 51 more than two layers and with its staggered stacked barrier layer 52, similarly also avoid boron element to diffuse to the region of this silicon metal base material 16 first surface 161 contiguous.
Consult Fig. 5, Fig. 6, the present invention one second preferred embodiment is similar to this first preferred embodiment, it is form an auxiliary barrier layer unit prior to the second surface 162 of this silicon metal base material 16 that its difference is in this step 34, this auxiliary barrier layer unit 6 comprise one deck by become the silica of N-shaped be the supplementary barrier layer 62 that forms of main material and at least one deck be the auxiliary separator 61 that main material is formed by silica, first surface 161 again in this silicon metal base material 16 adulterates to this second surface 162 direction to this silicon metal base material 16, and make this silicon metal base material 16 form this n-layer body 13 from this first surface 161 to this second surface 162 direction, and after doping, remove this auxiliary barrier layer unit 6.
In more detail, this step 34 of this second preferred embodiment be prior to the second surface 162 of this silicon metal base material 16 formed one with the auxiliary barrier layer unit 6 of this barrier layer unit 5 similar.The supplementary barrier layer 62 that one deck that this auxiliary barrier layer unit 6 has the second surface 162 being sequentially formed at this silicon metal base material 16 assists separator 61, one deck is formed at this auxiliary separator 61 surface and one deck are formed at the auxiliary separator 61 on this supplementary barrier layer 62 surface; In other words, this supplementary barrier layer 62 is folded between these two layers auxiliary separator 61, and the generation type of this auxiliary barrier layer unit 6 and this barrier layer unit 5 similar.And after this n-layer body 13 of formation, this auxiliary barrier layer unit 6 is removed.
The generation type of this auxiliary barrier layer unit 6 is with chemical vapour deposition technique, physical vaporous deposition prior to this second surface 162, or spin-on deposition silica forms this auxiliary separator 61, then, mode similarly forms one deck silicon oxide layer body then on this auxiliary separator 61; Continue, then plant with ion cloth, thermal diffusion, or N-shaped element doping is entered this silicon oxide layer body by isoionic mode, and forms the supplementary barrier layer 62 be made up of the silica of Doped n-type element.Wherein, N-shaped element is for being selected from nitrogen, phosphorus or Shen Deng VA race element; Come, in the surface of this supplementary barrier layer 62 again with chemical vapour deposition technique, physical vaporous deposition, or the mode of spin-on deposition silica solution forms this another layer formed with silica and assists separator 61 again.
Need explanatorily, the forming process on this barrier layer 52 similar, if forming the mode Doped n-type element of planting with ion cloth in the process of this supplementary barrier layer 62, then need form layer of oxide layer by the first surface 161 prior to this silicon metal base material 16 before ion cloth is planted, and again the oxide layer of this first surface 161 be removed after ion cloth is planted; If carry out the doping of N-shaped element with the mode of thermal diffusion or isoionic mode, then after Doped n-type element completes, to remove with wet etching or the mode of grinding from the first surface 161 of this silicon metal base material 16 again and adulterated and the region of polluting, do not polluted by N-shaped element doping with the first surface 161 maintaining this silicon metal base material 16 contiguous.
When this second preferred embodiment is when forming the process of this n-layer body 13, because nitrogen, phosphorus or arsenic have pre-existed in this supplementary barrier layer 62, then boron element is just not easily through this supplementary barrier layer 62 to external world, and then avoids boron element after this p-type layer body 12 dissipates to the external world, diffuse into the region (being formed n shape region) of this silicon metal base material 16 this first surface 161 contiguous again; In addition, supplementary barrier layer 62 and this p-type layer body 12 can be isolated by the auxiliary separator 61 be positioned between this p-type layer body 12 and this supplementary barrier layer 62; Be positioned at outermost auxiliary separator 61 this supplementary barrier layer 62 to be isolated from the outside, to avoid the N-shaped element of this supplementary barrier layer 62 to dissipate to the external world, even be diffuse into this silicon metal base material 16 from the first surface 161 of this silicon metal base material 16.
In addition, this auxiliary barrier layer unit 6 not only can be the sandwich structure be folded in by this supplementary barrier layer 62 between these two layers auxiliary separator 61, also can be staggered stacked auxiliary separator 61 more than two layers and supplementary barrier layer 62 depending on demand.
What first illustrate at this is, with chemical vapour deposition technique, physical vaporous deposition described in first, second preferred embodiment, or the mode such as spin-on deposition silica formed barrier layer, separator, supplementary barrier layer and auxiliary separator method be also applicable to following embodiment, therefore repeat no more.
Consult Fig. 5, Fig. 7, the present invention 1 the 3rd preferred embodiment is similar to this second preferred embodiment, it is sequentially arrange one deck barrier layer 52 and one deck separator 51 in the first surface 161 of this silicon metal base material 16 that its difference is in this step 31, and forms this barrier layer unit 5.
When carrying out this step 32, boron element enters silicon metal base material 16 probability from the first surface 161 of silicon metal base material 16 can be reduced in the barrier layer 52 of this barrier layer unit 5, the N-shaped element on this barrier layer 52 is isolated from the outside by this separator 51, enters this p-type layer body 12 to prevent the N-shaped Elements Diffusion on this barrier layer 52.On the other hand, due to this 52 one-tenth, barrier layer N-shaped, and the region of this silicon metal base material 16 this first surface 161 contiguous also can form n-layer body 13 through doping when this step 34, therefore N-shaped Elements Diffusion a small amount of in this barrier layer 52 enters this can't cause large impact to electrical characteristics by when becoming the region of n-layer body 13, and again can reduce this barrier layer unit 5 integral thickness.
Consult Fig. 5, Fig. 8, the present invention 1 the 4th preferred embodiment is similar to this first preferred embodiment, its difference second surface 162 be in this step 34 in this silicon metal base material 16 sequentially arranges one deck and assists separator 61 and one deck supplementary barrier layer 62, and forms this auxiliary barrier layer unit 6.
When the first surface 161 Doped n-type element of this silicon metal base material 16 is to form this n-layer body 13, the boron element that this supplementary barrier layer 62 reduces in this p-type layer body 12 is isolated from the outside, then prevents the N-shaped Elements Diffusion of this supplementary barrier layer 62 from entering this p-type layer body 12 by this auxiliary separator 61.On the other hand, due to this supplementary barrier layer 62 one-tenth N-shaped, and the region of this silicon metal base material 16 this first surface 161 contiguous is just being doping to N-shaped, even if enter this will become the region of n-layer body 13 so N-shaped element a small amount of in this supplementary barrier layer 62 be loose outward, the electrical characteristics of n-layer body 13 can't be subject to too large impact, and the integral thickness comparatively with the auxiliary barrier layer unit 6 of two layers of auxiliary separator 61 is thin.
Consult Fig. 5, Fig. 9, the present invention 1 the 5th preferred embodiment is similar to the 4th preferred embodiment, the first surface 161 that its difference is in this step 31 in this silicon metal base material 16 sequentially arranges one deck barrier layer 52 and one deck separator 51, and form this barrier layer unit 5, this separator 51 is not set between this barrier layer 52 and first surface 161, to reduce the thickness of this barrier layer unit 5.
When carrying out this step 32, the barrier layer 52 of this barrier layer unit 5 enters the probability of this silicon metal base material 16 from the first surface 161 of this silicon metal base material 16 for reducing boron element, this separator 51 is then for entering this p-type layer body 12 to prevent the N-shaped element on this barrier layer 52 from shedding.On the other hand, because the region of this silicon metal base material 16 this first surface 161 contiguous can form N-shaped through doping when this step 34, though the N-shaped Elements Diffusion in this barrier layer 52 to following become the region of n-layer body 13 time impact also little.
Consult Figure 10, Figure 11, the present invention 1 the 6th preferred embodiment is similar to this first preferred embodiment, its difference is in the 6th preferred embodiment this step 34 in advance, namely first adulterate from the first surface 161 of this silicon metal base material 16 and form this n-layer body 13, all the other steps postpone, namely proceed this step 31, this step 32, this step 33 and this step 35 again, equally also can obtain this solar cells made of crystalline silicon of the present invention.
The present invention optionally leaves all or part of separator 51 when removing this barrier layer unit 5, namely leaves the silicon oxide layer body structure of predetermined thickness as follow-up anti-reflecting layer 15.
Similarly, all or part of auxiliary separator 61 is also optionally left when removing this auxiliary barrier layer unit 6 as follow-up anti-reflecting layer 15.
From illustrating above, the present invention is reduced boron element and enters the probability of this silicon metal base material 16 from the first surface 161 of this silicon metal base material 16 and utilize supplementary barrier layer 62 to prevent boron element from this p-type layer body 12 dissipation by the stop on this barrier layer 52, and maintains the characteristic of semiconductor of the n-layer body 13 of the solar cells made of crystalline silicon formed.
Claims (11)
1. the manufacture method of a solar cells made of crystalline silicon, it is characterized in that, the manufacture method of this solar cells made of crystalline silicon comprises a step a, one step b, one step c and a steps d, this step a arranges a barrier layer unit in a first surface of a silicon metal base material, wherein, this barrier layer unit comprises the barrier layer that one deck is main material with the silica of the group Ⅴ element that adulterates, and at least one deck take silica as the separator of main material, the second surface doped with boron of this step b in this silicon metal base material in contrast to this first surface, this barrier layer stops boron, and make this silicon metal base material form one deck p-type layer body from this second surface to this direction, barrier layer, this step c optionally removes the predetermined structure of this barrier layer unit, this steps d is adulterated in this first surface to this silicon metal base material, and make this silicon metal base material form one deck n-layer body from this first surface to this second surface direction.
2. the manufacture method of solar cells made of crystalline silicon according to claim 1, is characterized in that, this barrier layer unit of this step a comprises the separator that two layers take silica as main material, and described separator and this barrier layer interlock stacked.
3. the manufacture method of solar cells made of crystalline silicon according to claim 1, is characterized in that, this step a sequentially arranges this barrier layer and one deck separator and forms this barrier layer unit on this silicon metal base material.
4. the manufacture method of the solar cells made of crystalline silicon according to Claims 2 or 3, is characterized in that, this step c removes separator and the barrier layer of this barrier layer unit.
5. the manufacture method of solar cells made of crystalline silicon according to claim 4, it is characterized in that, this steps d is before adulterating to this silicon metal base material, an auxiliary barrier layer unit is formed prior to the second surface of this silicon metal base material, this auxiliary barrier layer unit comprise one deck with the silica of the N-shaped supplementary barrier layer that is main material and at least one deck take silica as the auxiliary separator of main material, and after doping, remove this auxiliary barrier layer unit.
6. the manufacture method of solar cells made of crystalline silicon according to claim 5, is characterized in that, this steps d arranges two layers of auxiliary separator in this silicon metal base material and this auxiliary barrier layer unit of stacked formation that interlocks with this supplementary barrier layer.
7. the manufacture method of solar cells made of crystalline silicon according to claim 5, it is characterized in that, this steps d arranges one deck prior to this silicon metal base material and assists separator, then arranges this supplementary barrier layer on this auxiliary separator, and forms this auxiliary barrier layer unit.
8. the manufacture method of the solar cells made of crystalline silicon according to claim 6 or 7, it is characterized in that, the manufacture method of this solar cells made of crystalline silicon also comprises a step e after this steps d, and this step e forms an electrode unit be electrically connected with this p-type layer body and this n-layer body.
9. the manufacture method of solar cells made of crystalline silicon according to claim 2, it is characterized in that, this step c removes this separator and this barrier layer from this barrier layer unit farthest away from the layer body of this silicon metal base material, and the layer at least leaving the predetermined thickness of this separator be connected with this silicon metal base material forms one deck anti-reflecting layer.
10. the manufacture method of solar cells made of crystalline silicon according to claim 9, it is characterized in that, this steps d is before adulterating to this silicon metal base material, arrange one prior to the second surface of this silicon metal base material to be interlocked the stacked auxiliary barrier layer unit formed by the two layers of supplementary barrier layer that take silica as main material with the auxiliary separator becoming the silica of N-shaped to be main material and one deck, and this auxiliary separator and this supplementary barrier layer is removed from this auxiliary barrier layer unit farthest away from the layer body of this silicon metal base material after doping, and the layer at least leaving the predetermined thickness of the auxiliary separator be connected with this silicon metal base material forms one deck anti-reflecting layer.
The manufacture method of 11. solar cells made of crystalline silicon according to claim 9, it is characterized in that, this steps d is before adulterating to this silicon metal base material, prior to the second surface of this silicon metal base material arrange one sequentially by one deck with silica be the supplementary barrier layer of main material and one deck with the stacked auxiliary barrier layer unit formed of the auxiliary separator becoming the silica of N-shaped to be main material, and after doping, remove this auxiliary barrier layer unit.
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|---|---|---|---|---|
| CN101692466A (en) * | 2009-09-17 | 2010-04-07 | 中电电气（南京）光伏有限公司 | Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique |
| WO2011135249A1 (en) * | 2010-04-26 | 2011-11-03 | Photowatt International | Method for preparing an n+pp+ or p+nn+ structure on silicon wafers |
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2011
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101692466A (en) * | 2009-09-17 | 2010-04-07 | 中电电气（南京）光伏有限公司 | Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique |
| WO2011135249A1 (en) * | 2010-04-26 | 2011-11-03 | Photowatt International | Method for preparing an n+pp+ or p+nn+ structure on silicon wafers |
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