CN103166098A - L-shaped optical pump gas terahertz laser resonant cavity using quartz crystal wafer as beam splitting wafer, and laser device with resonant cavity - Google Patents
L-shaped optical pump gas terahertz laser resonant cavity using quartz crystal wafer as beam splitting wafer, and laser device with resonant cavity Download PDFInfo
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- CN103166098A CN103166098A CN2013100897949A CN201310089794A CN103166098A CN 103166098 A CN103166098 A CN 103166098A CN 2013100897949 A CN2013100897949 A CN 2013100897949A CN 201310089794 A CN201310089794 A CN 201310089794A CN 103166098 A CN103166098 A CN 103166098A
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Abstract
The invention discloses an L-shaped optical pump gas terahertz laser resonant cavity using a quartz crystal wafer as a beam splitting wafer, and a laser device with the resonant cavity, relates to the field of terahertz laser, and aims to solve the problems that an obtained terahertz laser beam is low in quality, pump laser cannot be fully utilized and a high-efficiency and high-energy optical pump gas terahertz laser device cannot be obtained in a conventional terahertz resonant cavity mode. According to the L-shaped optical pump gas terahertz laser resonant cavity using the quartz crystal wafer as the beam splitting wafer, and the laser device with the resonant cavity, the output laser is large in light spot, uniform in distribution and low in divergence under the interaction of a gold mirror and a quartz wafer, and the quality of a light beam is improved; and a Z-cut quartz crystal wafer serves as a spectrum beam splitting wafer, and the pump light is fully utilized by coupling the pump light through the Z-cut quartz crystal wafer and the quartz wafer. Therefore, the L-shaped optical pump gas terahertz laser resonant cavity is applicable to a terahertz laser device with high efficiency and high pump energy of more than 1 joule.
Description
Technical field
The present invention relates to a kind of optical pumping gas thz laser resonant cavity, relate in particular to based on the L-type optical pumping gas thz laser resonant cavity of quartz wafer as the spectrum beam splitting chip.Belong to the thz laser field.
Background technology
The research of optical pumping gas thz laser device and resonant cavity thereof early, optical pumping gas thz laser device is relatively ripe at present, for coaxial pumping situation, the resonant cavity of optical pumping gas thz laser device mainly is divided into aperture coupling Terahertz resonant cavity and metallic mesh coupling Terahertz resonant cavity.Aperture coupling Terahertz resonant cavity mode, almost can be coupled to whole pump lights in the Terahertz gain region, pump light obtains to take full advantage of, but because the light beam to pump light focuses on compression, be not suitable for the pump laser of high pumping energy, in addition, the beam quality of the thz laser of its acquisition is poor.Metallic mesh coupling Terahertz resonant cavity mode, can obtain the thz laser of better beam quality, but because metallic mesh is low to the transmitance of pump light, can only be coupled to the part pump energy in the Terahertz gain region, therefore, it can not utilize pumping laser fully.
Summary of the invention
The present invention is in order to solve under existing Terahertz resonant cavity mode, and the thz laser beam quality of acquisition is poor, can not utilize fully pumping laser, can not obtain the problem of the optical pumping gas thz laser device of high efficiency, macro-energy.Now providing a kind of is the L-type optical pumping gas thz laser resonant cavity of beam splitting chip and the laser that contains this resonant cavity based on quartz wafer.
Be the L-type optical pumping gas thz laser resonant cavity of beam splitting chip based on quartz wafer, it comprises: the anti-reflection window of ZnSe, Z-cut quartz wafer, quartz plate, be all-trans the radioglold mirror and, short straight tube and long straight tube;
One end of short straight tube is fixedly connected with the sidewall of long straight tube, and the internal communication of the inside of short straight tube and long straight tube, and the central axis of short straight tube is 90 ° with the angle of the central axis of long straight tube;
One end of long straight tube is fixedly connected with quartz plate, the other end is fixedly connected with the radioglold mirror that is all-trans, the Z-cut quartz wafer is positioned at long straight tube, and described quartz plate is parallel to each other with the radioglold mirror that is all-trans, and the center of Z-cut quartz wafer is 60mm with the distance on the plane, radioglold mirror place of being all-trans;
The other end of short straight tube is fixedly connected with the anti-reflection window of ZnSe, after being incident in short straight tube perpendicular to the light beam of the anti-reflection window of ZnSe, after the reflection of the reflecting surface of Z-cut quartz wafer, vertical incidence is to the reflecting surface of quartz plate, the centre distance of ZnSe is anti-reflection plane, window place and Z-cut quartz wafer is 60mm;
The anti-reflection window of ZnSe, quartz plate, the radioglold mirror that is all-trans, short straight tube and long straight tube form airtight cavity.
Be filled with Terahertz gain gas in above-mentioned resonant cavity, described Terahertz gain gas is D
2O, CH
3F or NH
3, gas pressure intensity is between 100Pa-3000Pa.
Above-mentioned quartz plate to the reflectivity of thz laser between 0.15-0.2.
Containing above-mentioned is the laser of the L-type optical pumping gas thz laser resonant cavity of beam splitting chip based on quartz wafer, and it comprises: be L-type optical pumping gas thz laser resonant cavity, metal grating at former quarter, the 2nd anti-reflection window of ZnSe, CO 2 laser discharge cavity, carbon dioxide laser output coupling mirror, carbon dioxide laser beam splitting chip, vacuum and air distribution system and the thz laser gain gas storage cavity of beam splitting chip based on quartz wafer;
the 2nd anti-reflection window of ZnSe is fixedly connected with an end of CO 2 laser discharge cavity, the carbon dioxide laser output coupling mirror is fixedly connected with the other end of CO 2 laser discharge cavity, rotatable metal grating at former quarter is positioned at the 2nd anti-reflection window one side of ZnSe, the carbon dioxide laser output coupling mirror with based on quartz wafer be on the L-type optical pumping gas thz laser resonant cavity of beam splitting chip the anti-reflection window of ZnSe over against, and place plane parallel both, the carbon dioxide laser beam splitting chip is between carbon dioxide laser output coupling mirror and the anti-reflection window of ZnSe,
Thz laser gain gas storage cavity is connected by vacuum corrugated pipe with the long straight tube that based on quartz wafer is the L-type optical pumping gas thz laser resonant cavity of beam splitting chip with air distribution system by vacuum.
of the present invention is that the L-type optical pumping gas thz laser resonant cavity of beam splitting chip and the laser that contains this resonant cavity utilize the Z-cut quartz wafer as the spectrum beam splitting chip based on quartz wafer, and the pumping laser coupling unit that consists of by Z-cut quartz wafer and quartz plate is being coupled in the Terahertz gain region near whole pumping lasers, pumping laser is fully utilized, therefore the L-type optical pumping gas thz laser resonant cavity that is beam splitting chip based on quartz wafer of the present invention is applicable to the high efficiency that energy surpasses erg-ten, the optical pumping gas thz laser device of high pumping energy, the simultaneously interaction of golden mirror and quartz plate make the laser facula of output large, be evenly distributed, the angle of divergence is little, therefore improved the beam quality of thz laser.
Description of drawings
Fig. 1 is based on quartz wafer as the structural representation of the L-type optical pumping gas thz laser resonant cavity of spectrum beam splitting chip.
To contain based on the laser structure schematic diagram of quartz wafer as the L-type optical pumping gas thz laser resonant cavity of spectrum beam splitting chip in the dotted line frame in Fig. 2.
Embodiment
Embodiment one: illustrate present embodiment with reference to Fig. 1, present embodiment is described is the L-type optical pumping gas thz laser resonant cavity of beam splitting chip based on quartz wafer, and it comprises: ZnSe is anti-reflection window 1, Z-cut quartz wafer 2, quartz plate 3, the radioglold mirror 4 that is all-trans, short straight tube 5 and long straight tube 6;
One end of short straight tube 5 is fixedly connected with the sidewall of long straight tube 6, and the internal communication of the inside of short straight tube 5 and long straight tube 6, and the central axis of short straight tube 5 is 90 ° with the angle of the central axis of long straight tube 6;
One end of long straight tube 6 is fixedly connected with quartz plate 3, the other end is fixedly connected with the radioglold mirror 4 that is all-trans, Z-cut quartz wafer 2 is positioned at long straight tube 6, and described quartz plate 3 is parallel to each other with the radioglold mirror 4 that is all-trans, and the center of Z-cut quartz wafer 2 is 60mm with the distance on radioglold mirror 4 planes, place of being all-trans;
The other end of short straight tube 5 is fixedly connected with the anti-reflection window 1 of ZnSe, perpendicular to the light beam of the anti-reflection window 1 of ZnSe be incident to short straight tube 5 interior after, after the reflection of the reflecting surface of Z-cut quartz wafer 2, vertical incidence is to the reflecting surface of quartz plate 3, the centre distance of ZnSe is anti-reflection window 1 plane, place and Z-cut quartz wafer 2 is 60mm;
ZnSe is anti-reflection window 1, quartz plate 3, the radioglold mirror 4 that is all-trans, short straight tube 5 and long straight tube 6 form airtight cavitys.
Embodiment two: present embodiment is that the described L-type optical pumping gas thz laser resonant cavity that is beam splitting chip based on quartz wafer of embodiment one is described further, in present embodiment, be filled with Terahertz gain gas in resonant cavity, described Terahertz gain gas is D
2O, CH
3F or NH
3, gas pressure intensity is between 100Pa-3000Pa.
Embodiment three: present embodiment is that the described L-type optical pumping gas thz laser resonant cavity that is beam splitting chip based on quartz wafer of embodiment one or two is described further, in present embodiment, the reflectivity of 3 pairs of thz lasers of quartz plate is between 0.15-0.2.
The operation principle of L-type optical pumping gas thz laser resonant cavity that based on quartz wafer is beam splitting chip is as follows:
pumping laser is incident in airtight cavity through the anti-reflection window 1 of ZnSe, and be the direction of 45 ° with the reflecting surface with Z-cut quartz wafer 2 and be mapped on Z-cut quartz wafer 2, Z-cut quartz wafer 2 reflexes to pumping laser on quartz plate 3, quartz plate 3 reflexes to pumping laser on Z-cut quartz wafer 2 again, utilized fully during this time pumping laser, pumping laser makes the pumped gas molecule form population inversion between the different rotational energy levels on same vibration level, thereby formation thz laser, thz laser is transmitted on the radioglold mirror 4 that is all-trans through Z-cut quartz wafer 2, the radioglold mirror 4 that is all-trans is reflected back thz laser on quartz plate 3, thz laser transmits cavity from quartz plate 3 after stimulated radiation is amplified being all-trans to vibrate back and forth between radioglold mirror 4 and quartz plate 3,
Because there is loss in thz laser in the L-type optical pumping gas thz laser resonant cavity that based on quartz wafer is beam splitting chip, therefore between the anti-reflection window 1 of ZnSe and Z-cut quartz wafer 2, Z-cut quartz wafer 2 and the golden mirror 4 of reflection, respective distance is set, can reduces the loss of thz laser and the utilance of raising thz laser.
embodiment four: illustrate present embodiment with reference to Fig. 2, the described embodiment one that contains of present embodiment, two or three any one execution modes are described is the laser of the L-type optical pumping gas thz laser resonant cavity of beam splitting chip based on quartz wafer, it comprises: be the L-type optical pumping gas thz laser resonant cavity of beam splitting chip based on quartz wafer, metal grating at former quarter 7, the 2nd anti-reflection window 8 of ZnSe, CO 2 laser discharge cavity 9, carbon dioxide laser output coupling mirror 10, carbon dioxide laser beam splitting chip 11, vacuum and air distribution system 12 and thz laser gain gas storage cavity 13,
the 2nd anti-reflection window 8 of ZnSe is fixedly connected with an end of CO 2 laser discharge cavity 9, carbon dioxide laser output coupling mirror 10 is fixedly connected with the other end of CO 2 laser discharge cavity 9, rotatable metal grating at former quarter 7 is positioned at the 2nd anti-reflection window 8 one sides of ZnSe, carbon dioxide laser output coupling mirror 10 with based on quartz wafer be on the L-type optical pumping gas thz laser resonant cavity of beam splitting chip the anti-reflection window 1 of ZnSe over against, and place plane parallel both, carbon dioxide laser beam splitting chip 11 is between carbon dioxide laser output coupling mirror 10 and the anti-reflection window 1 of ZnSe,
Thz laser gain gas storage cavity 13 is connected with air distribution system by vacuum and is connected by vacuum corrugated pipe with the long straight tube 6 that based on quartz wafer is the L-type optical pumping gas thz laser resonant cavity of beam splitting chip.
Contain embodiment one, two or three any one execution modes are described is the laser of the L-type optical pumping gas thz laser resonant cavity of beam splitting chip based on quartz wafer, in practical operation, can realize containing based on quartz wafer in conjunction with thz laser lens 14, thz laser energy meter 15, oscilloscope 16 and carbon dioxide laser spectrometer 17 be the use of laser of the L-type optical pumping gas thz laser resonant cavity of beam splitting chip, shown in Figure 2.
Containing based on quartz wafer is that the laser works principle of L-type optical pumping gas thz laser resonant cavity of beam splitting chip is as follows:
metal grating at former quarter 7, the 2nd anti-reflection window 8 of ZnSe, CO 2 laser discharge cavity 9 and carbon dioxide laser output coupling mirror 10 form tuning carbon dioxide laser, this tuning carbon dioxide laser emission pumping laser is to carbon dioxide laser beam splitting chip 11, this pumping laser obtains transmission laser bundle and reflection lasering beam through 11 beam splitting of carbon dioxide laser beam splitting chip, described reflection lasering beam is incident to carbon dioxide laser spectrometer 17, 17 pairs of pumping lasers of carbon dioxide laser spectrometer carry out the detection of wavelength, coordinate simultaneously rotating metallic grating at former quarter 7 to obtain required pumping wavelength, it is in the L-type optical pumping gas thz laser resonant cavity of beam splitting chip that described transmission laser bundle is incident to based on quartz wafer perpendicular to the anti-reflection window 1 of ZnSe, the thz laser that penetrates through quartz plate 3 is incident to too hereby laser lens 14, after the thz laser of 14 pairs of incidents of these thz laser lens focuses on, thz laser is injected thz laser energy meter 15, 15 pairs of thz lasers of thz laser energy meter carry out the measurement of energy, energy by 16 pairs of thz lasers of oscilloscope shows and reads at last,
Thz laser gain gas storage cavity 13 and vacuum and air distribution system 12 will be evacuated based on the L-type optical pumping gas thz laser resonant cavity that quartz wafer is beam splitting chip, are filled with Terahertz gain gas simultaneously in this cavity.
Claims (4)
1. be the L-type optical pumping gas thz laser resonant cavity of beam splitting chip based on quartz wafer, it is characterized in that, it comprises: the anti-reflection window of ZnSe (1), Z-cut quartz wafer (2), quartz plate (3), the radioglold mirror (4) that is all-trans, short straight tube (5) and long straight tube (6);
One end of short straight tube (5) is fixedly connected with the sidewall of long straight tube (6), and the internal communication of the inside of short straight tube (5) and long straight tube (6), the central axis of short straight tube (5) is 90 ° with the angle of the central axis of long straight tube (6);
One end of long straight tube (6) is fixedly connected with quartz plate (3), the other end is fixedly connected with the radioglold mirror (4) that is all-trans, Z-cut quartz wafer (2) is positioned at long straight tube (6), described quartz plate (3) is parallel to each other with the radioglold mirror (4) that is all-trans, and the center of Z-cut quartz wafer (2) is 60mm with the distance on radioglold mirror (4) plane, place of being all-trans;
The other end of short straight tube (5) is fixedly connected with the anti-reflection window of ZnSe (1), after being incident in short straight tube (5) perpendicular to the light beam of the anti-reflection window of ZnSe (1), after the reflection of the reflecting surface of Z-cut quartz wafer (2), vertical incidence is to the reflecting surface of quartz plate (3), the centre distance of the anti-reflection window of ZnSe (1) plane, place and Z-cut quartz wafer (2) is 60mm;
The anti-reflection window of ZnSe (1), quartz plate (3), the radioglold mirror (4) that is all-trans, short straight tube (5) and long straight tube (6) form airtight cavity.
2. according to claim 1 is the L-type optical pumping gas thz laser resonant cavity of beam splitting chip based on quartz wafer, it is characterized in that, has been filled with Terahertz gain gas in resonant cavity, and described Terahertz gain gas is D
2O, CH
3F or NH
3, gas pressure intensity is between 100Pa-3000Pa.
3. according to claim 1 is the L-type optical pumping gas thz laser resonant cavity of beam splitting chip based on quartz wafer, it is characterized in that, quartz plate (3) to the reflectivity of thz laser between 0.15-0.2.
4. contain claim 1,2 or 3 described be the laser of the L-type optical pumping gas thz laser resonant cavity of beam splitting chip based on quartz wafer, it is characterized in that, it comprises: be the L-type optical pumping gas thz laser resonant cavity of beam splitting chip based on quartz wafer, metal grating at former quarter (7), the 2nd anti-reflection window of ZnSe (8), CO 2 laser discharge cavity (9), carbon dioxide laser output coupling mirror (10), carbon dioxide laser beam splitting chip (11), vacuum and air distribution system (12) and thz laser gain gas storage cavity (13),
the 2nd anti-reflection window of ZnSe (8) is fixedly connected with an end of CO 2 laser discharge cavity (9), carbon dioxide laser output coupling mirror (10) is fixedly connected with the other end of CO 2 laser discharge cavity (9), rotatable metal grating at former quarter (7) is positioned at the 2nd anti-reflection window (8) one sides of ZnSe, carbon dioxide laser output coupling mirror (10) with based on quartz wafer be on the L-type optical pumping gas thz laser resonant cavity of beam splitting chip the anti-reflection window of ZnSe (1) over against, and place plane parallel both, carbon dioxide laser beam splitting chip (11) is positioned between carbon dioxide laser output coupling mirror (10) and the anti-reflection window of ZnSe (1),
Thz laser gain gas storage cavity (13) is connected 12 by vacuum with air distribution system) be connected by vacuum corrugated pipe with the long straight tube (6) that based on quartz wafer is the L-type optical pumping gas thz laser resonant cavity of beam splitting chip.
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| CN201310089794.9A CN103166098B (en) | 2013-03-20 | 2013-03-20 | L-shaped optical pump gas terahertz laser resonant cavity using quartz crystal wafer as beam splitting wafer, and laser device with resonant cavity |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110571631A (en) * | 2019-10-08 | 2019-12-13 | 郑州轻工业学院 | Terahertz laser |
| CN113097851A (en) * | 2021-03-26 | 2021-07-09 | 中国科学院合肥物质科学研究院 | Compact carbon dioxide pumping terahertz dual-frequency laser |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4249139A (en) * | 1977-12-19 | 1981-02-03 | Jersey Nuclear-Avco Isotopes, Inc. | CO2 laser emitting at 16 microns in 02°0-01'0 transition |
| JP2000236125A (en) * | 1999-02-15 | 2000-08-29 | Komatsu Ltd | Vacuum ultraviolet laser |
| WO2012050696A1 (en) * | 2010-10-14 | 2012-04-19 | Thermo Fisher Scientific Inc. | Optical chamber module assembly |
| CN202433655U (en) * | 2011-12-28 | 2012-09-12 | 山东科技大学 | Terahertz wave amplifying device based on optical pumping base-free graphene |
| CN102940935A (en) * | 2012-11-15 | 2013-02-27 | 中国科学院深圳先进技术研究院 | Terahertz wave generation device |
-
2013
- 2013-03-20 CN CN201310089794.9A patent/CN103166098B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4249139A (en) * | 1977-12-19 | 1981-02-03 | Jersey Nuclear-Avco Isotopes, Inc. | CO2 laser emitting at 16 microns in 02°0-01'0 transition |
| JP2000236125A (en) * | 1999-02-15 | 2000-08-29 | Komatsu Ltd | Vacuum ultraviolet laser |
| WO2012050696A1 (en) * | 2010-10-14 | 2012-04-19 | Thermo Fisher Scientific Inc. | Optical chamber module assembly |
| CN202433655U (en) * | 2011-12-28 | 2012-09-12 | 山东科技大学 | Terahertz wave amplifying device based on optical pumping base-free graphene |
| CN102940935A (en) * | 2012-11-15 | 2013-02-27 | 中国科学院深圳先进技术研究院 | Terahertz wave generation device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110571631A (en) * | 2019-10-08 | 2019-12-13 | 郑州轻工业学院 | Terahertz laser |
| CN113097851A (en) * | 2021-03-26 | 2021-07-09 | 中国科学院合肥物质科学研究院 | Compact carbon dioxide pumping terahertz dual-frequency laser |
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