CN113948953A - Erbium-doped laser of cascade pump - Google Patents
Erbium-doped laser of cascade pump Download PDFInfo
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- CN113948953A CN113948953A CN202111195052.5A CN202111195052A CN113948953A CN 113948953 A CN113948953 A CN 113948953A CN 202111195052 A CN202111195052 A CN 202111195052A CN 113948953 A CN113948953 A CN 113948953A
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- 239000013078 crystal Substances 0.000 claims abstract description 70
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 12
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000008859 change Effects 0.000 claims abstract description 5
- 229910052783 alkali metal Inorganic materials 0.000 claims description 27
- 150000001340 alkali metals Chemical class 0.000 claims description 27
- 238000005086 pumping Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000010287 polarization Effects 0.000 claims description 10
- 241001270131 Agaricus moelleri Species 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000007493 shaping process Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- -1 erbium ions Chemical class 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 3
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims description 3
- 230000007306 turnover Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052701 rubidium Inorganic materials 0.000 description 3
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910003069 TeO2 Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094038—End pumping
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
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- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/117—Q-switching using intracavity acousto-optic devices
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1691—Solid materials characterised by additives / sensitisers / promoters as further dopants
- H01S3/1698—Solid materials characterised by additives / sensitisers / promoters as further dopants rare earth
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Abstract
The present disclosure provides an erbium doped laser of a cascade pump, comprising: the resonant cavity comprises a third reflector, a Q switch, an erbium-doped crystal and an output mirror which are arranged in sequence; the cascade gain unit is used for generating pump light with a first wavelength, pumps the erbium-doped crystal and comprises pump gain modules which are symmetrically arranged on two sides of the erbium-doped crystal respectively and form a set angle with the erbium-doped crystal; the doping concentration of the erbium-doped crystal is in gradient alternate change, after the erbium-doped crystal is pumped by the pump light with the first wavelength, the erbium-doped crystal generates second wavelength light in the resonant cavity, and the loss in the resonant cavity is adjusted through the Q switch, so that the giant pulse laser with the second wavelength is obtained.
Description
Technical Field
The disclosure relates to laser technology and application field thereof, in particular to an erbium-doped laser of a cascade pump.
Background
In recent years, laser beams simultaneously outputting medium and long waves have wide application prospects in the fields of laser target indication, laser radars, photoelectric countermeasure and the like. The photon with the wavelength of 2.8 μm can respectively obtain the idler frequency light with the wavelength of 9-12 μm and the signal light with the wavelength of 3.65-4.06 μm by the nonlinear frequency conversion technology. The light beams of the two wave bands respectively correspond to long-wave and medium-wave window regions propagated by the atmosphere, so that the medium-infrared laser with high beam quality and the wavelength of 2.8 mu m is the basis for obtaining the medium-long wave and simultaneously outputting the laser beam.
Currently, lasers with a wavelength of 2.8 μm are commonly obtained using several laser systems: (1) a quantum cascade laser; (2) electrically exciting hydrogen fluoride; (3) an overtone CO laser; (4) non-linear frequency conversion techniques; (5) erbium doped laser. Among them, the fifth one has obvious advantages over the first four:
(1) compared with a quantum cascade laser, the quantum cascade laser can obtain high peak power by a Q-switching technology;
(2) compared with electrically excited hydrogen fluoride, it has the advantages of large gain of gain medium in unit length, compact structure, no chemical pollution and long service life;
(3) compared with the universal frequency CO laser, the wide-band laser still has higher luminous efficiency at normal temperature;
(4) compared with the nonlinear frequency conversion technology, the nonlinear frequency conversion technology has no nonlinear damage problem, and the solid laser heat dissipation technology and the resonant cavity design technology can be used for reference to obtain high-power laser output.
Therefore, the erbium-doped laser is expected to be a good-quality pump source of the medium-wavelength integrated OPO.
The mid-wavelength integrated OPO has a pressing application demand for a laser source with high beam quality, high peak power and high average power in a wavelength band of 2.8 μm and its vicinity. Erbium doped lasers are one of the main approaches to achieving 2.8 μm and its nearby wavelength sources. However, the erbium-doped laser realized by the current technical route has difficulty in meeting the beam characteristic requirements of high beam quality and high average power at the same time.
Disclosure of Invention
In view of the above, it is a primary object of the present disclosure to provide an erbium-doped laser of cascade pump, which is intended to partially solve at least one of the above technical problems.
To achieve the above object, as an aspect of the present disclosure, there is provided a cascade-pumped erbium-doped laser including: the resonant cavity comprises a third reflector, a Q switch, an erbium-doped crystal and an output mirror which are arranged in sequence; the cascade gain unit is used for generating pump light with a first wavelength, pumps the erbium-doped crystal and comprises pump gain modules which are symmetrically arranged on two sides of the erbium-doped crystal respectively and form a set angle with the erbium-doped crystal; the doping concentration of the erbium-doped crystal is in gradient alternate change, after the erbium-doped crystal is pumped by the pump light with the first wavelength, the erbium-doped crystal generates second wavelength light in the resonant cavity, and the loss in the resonant cavity is adjusted through the Q switch, so that the giant pulse laser with the second wavelength is obtained.
According to the embodiment of the disclosure, the pumping gain modules arranged on both sides of the erbium-doped crystal comprise the same number of alkali metal vapor laser gain modules, and are connected by adopting a series connection technology.
According to an embodiment of the present disclosure, the alkali metal vapor laser gain module includes: a semiconductor laser for outputting semiconductor laser light; the beam shaping module is used for converting the semiconductor laser beam into a flat-top beam with uniformly distributed energy; the off-axis parabolic mirror is used for reflecting and focusing the flat-top light beam to improve the power density and obtain pumping light; the alkali metal vapor chamber is filled with an alkali metal simple substance and buffer gas and is used for realizing the particle turnover of the upper energy level and the lower energy level of the alkali metal atomic laser under the action of the pump light; and a temperature control furnace for controlling the temperature of the alkali metal vapor chamber.
According to the embodiment of the disclosure, the cross-sectional diameters of the central light through hole of the off-axis parabolic mirror and the alkali metal vapor chamber with the capillary structure in the light beam propagation direction are both in mm level.
According to the embodiment of the present disclosure, the cascade gain unit further includes a first mirror and a second mirror respectively corresponding to the pumping gain modules on two sides of the erbium-doped crystal, so as to form a symmetric Π -type folded resonator.
According to the embodiment of the present disclosure, the polarization states of the pump light with the first wavelength and the light with the second wavelength are perpendicular to each other, and polarization coupling is achieved at the end face of the erbium-doped crystal.
According to the embodiment of the disclosure, the resonant cavity is a double-cavity; the Q switch is an acousto-optic Q switch and is made of tellurium dioxide.
According to the embodiment of the disclosure, a plurality of photodetectors are correspondingly arranged in the pumping gain modules on two sides of the erbium-doped crystal, and are used for monitoring the gain generation condition of the gain module of the alkali metal vapor laser.
According to the embodiment of the disclosure, the erbium-doped crystal is obtained by doping erbium ions with concentration gradient alternating in YAP crystal; the erbium-doped crystal is formed by alternately arranging doped sections and undoped sections, and the doping concentration of the doped section in the middle area is higher than that of the doped sections in the areas on the two sides.
Based on the above technical solution, the erbium-doped laser of the cascade pump of the present disclosure has at least one or some of the following advantages over the prior art:
(1) compared with a side pumping technology, the laser with better beam quality and higher power can be obtained by adopting a polarization coupling end-pumping structure; the problem of film damage of the crystal end face during end face pumping can be solved by utilizing the light polarization of the pumping light.
(2) By adopting the cascade pumping technology, the end-face pumping can realize the mode matching of 40mm and above, and the resonant cavity structure of the cascade pumping can realize higher mode matching factors and obtain the mid-infrared laser with higher beam quality.
(3) The erbium-doped crystal with the doping concentration gradient in cross change has the characteristic of quasi-optical fiber heat dissipation, and the doped regions and the undoped regions appear alternately, so that the heat problem in the pumping process is solved.
Drawings
Fig. 1 is a schematic structural diagram of a cascade-pumped erbium doped laser according to an embodiment of the present disclosure.
Fig. 2 is a schematic diagram of the principle of erbium doped laser polarized end pumping of the cascade pump of the disclosed embodiment.
Detailed Description
Er3+The ions have absorption peaks near the wavelengths of 650nm, 795nm, 980nm and the like in the visible-near infrared region, and laser output with the wavelength of 2.8 mu m and the wavelength near the wavelength can be obtained by adopting light source pumping with corresponding wavelength and through a cross relaxation process. The rubidium vapor laser (Rb-DPAL) has an output wavelength of 795nm in Er3+In the 795nm absorption band of ions, Er doping can be realized by adopting an end-face cascade pumping structure by virtue of the characteristic of high beam quality of Rb-DPAL (Rb-DPAL)3+The laser has high power and high beam quality.
In order to make the objects, technical solutions and advantages of the present disclosure more apparent, the present disclosure is further described in detail below with reference to the accompanying drawings in combination with specific embodiments and experimental facilities.
The present disclosure provides a cascade-pumped erbium doped laser, as shown in fig. 1 and fig. 2, including:
the resonant cavity comprises a third reflector, a Q switch, an erbium-doped crystal and an output mirror which are arranged in sequence;
the cascade gain unit is used for generating pump light with a first wavelength to pump the erbium-doped crystal and comprises pump gain modules which are respectively and symmetrically arranged on two sides of the erbium-doped crystal and form a set angle with the erbium-doped crystal;
the doping concentration of the erbium-doped crystal is in gradient alternate change, after the erbium-doped crystal is pumped by the pump light with the first wavelength, the erbium-doped crystal generates second wavelength light in the resonant cavity, and the loss in the resonant cavity is adjusted through the Q switch, so that the giant pulse laser with the second wavelength is obtained.
In the disclosed embodiment, as shown in fig. 1 and fig. 2, the solid line represents the pump light of the first wavelength obtained by the cascaded gain cells, in the disclosed embodiment, the laser light with the wavelength of 795nm, which is the pump light used for pumping the erbium-doped crystal, and the dotted line represents the light of the second wavelength, in the disclosed embodiment, the mid-infrared laser light of 2.8 μm.
In the disclosed embodiment, mirrors M1, M2, M3 are all mirrors, and mirror M4 is the output mirror for 2.8 μ M laser light.
In the embodiment of the disclosure, an acousto-optic Q-switch technology is adopted, the Q-switch is an acousto-optic Q-switch, and by using the acousto-optic effect of the crystal, when laser passes through the acousto-optic crystal, the loss in the resonant cavity is very large, and the oscillation cannot be started, when the energy level particles on the working substance are accumulated to the maximum, the sound field in the acousto-optic medium is suddenly removed, the loss in the cavity is reduced, and the laser outputs huge pulses, so that the laser output with high peak power can be obtained.
In the disclosed embodiment, the erbium-doped crystal is doped with erbium ions in YAP crystal to obtain Er: YAP crystals. The YAP crystal belongs to an orthorhombic crystal system, has good thermal conductivity, lower phonon energy, better absorption characteristic at 795nm, higher stimulated radiation cross section and easier acquisition of high-efficiency laser oscillation. The erbium-doped crystal can output laser with wavelength of 2.8 μm and nearby wavelength after being pumped by light with corresponding wavelength. The erbium-doped crystal is formed by alternately arranging doped sections and undoped sections, and the doping concentration of the doped section in the middle area is higher than that of the doped sections in the areas on the two sides. The erbium-doped crystal with the cross-change periodic concentration is used, so that the erbium-doped crystal and the non-erbium-doped crystal appear periodically, the effective heat dissipation section of the crystal is improved, and the thermal lens effect in the laser operation process is reduced.
In the disclosed embodiment, the LD is a semiconductor laser that outputs a semiconductor laser that functions to pump an alkali metal vapor chamber.
In an embodiment of the present disclosure, the alkali metal vapor cell is a rubidium (Rb) vapor cell. The inside of the chamber is filled with Rb metal simple substance and buffer gas, methane is selected as the buffer gas, and the particle turnover of the upper energy level and the lower energy level of Rb metal atom laser can be realized after the focused semiconductor laser pumping is carried out in the vapor chamber.
In the embodiment of the disclosure, the beam shaping module is used for converting a laser beam emitted by the LD into a flat-top spot with uniformly distributed energy, and after shaping, the flat-top spot irradiates the off-axis parabolic mirror. As shown in fig. 1, in each of the 6 Rb-DPAL gain modules, an LD is used as a pumping source, but due to its own structure, the LD has different divergence angles of light beams in the fast and slow axis directions, uneven energy distribution, low energy density, and poor light beam quality, which limit the practical application effect of the LD, so that the lens combination shown in fig. 1 is selected to collimate the fast axis direction and the slow axis direction of laser beams emitted by the LD, and the size of a light spot is compressed at the same time, thereby realizing beam shaping in a free space.
In the embodiment of the disclosure, the off-axis parabolic mirror can reflect the shaped semiconductor laser and focus the semiconductor laser, so as to improve the power density of the pump light. The light beam reflected by the off-axis paraboloid mirror is emitted to the alkali metal vapor chamber, and the focus is in the chamber.
The temperature control furnace is used to control the temperature of the Rb metal vapor chamber for providing the operating temperature conditions required for the operation of such alkali metal lasers.
The laser gain module comprises an LD, a beam shaping lens, an off-axis parabolic mirror and an alkali metal vapor chamber (in the embodiment of the disclosure, an Rb vapor chamber), which jointly form the alkali metal vapor laser gain module. As can be seen from fig. 1, the pump gain module includes 6 cascaded alkali metal vapor laser gain modules, and the 6 alkali metal vapor laser gain modules are the same and connected by using a series connection technique, so that a higher power density in the cavity can be achieved. The project realizes the average power of 100W (the power density is more than 6 kW/cm) in the cavity through a cascade gain unit consisting of 6 cascade alkali metal vapor laser gain modules2) The Rb-DPAL beam of (1) still operates in the linear operating range of Rb-DPAL. The gain units formed by 6 Rb-DPAL form an n-shaped folded resonant cavity which is distributed in an Er: two ends of the YAP crystal form a symmetrical end-pumped structure. The resonant cavity of the pumping gain module is a double-concave cavity, so that the beam waist of Rb-DPAL in the cavity is in Er: the center of the YAP crystal facilitates the realization of a high gain region of 2.8 μm.
The cross section diameters of a central light through hole of the off-axis parabolic mirror and a rubidium capillary structure gas chamber in the transmission direction of the Rb-DPAL light beam (the pump light with the first wavelength) are both in the mm level, so that the Rb-DPAL has free space transmission characteristics and also has the function of small hole mode limiting, the Rb-DPAL has better light beam quality, and a 10 cm-length-level Rayleigh focusing light beam can be generated in a resonant cavity. The obtained Gaussian focused beam is used for pumping the erbium-doped crystal, so that the population inversion of the upper energy level and the lower energy level of the erbium ion 2.8 mu m laser can be realized, and the gain is formed.
In the embodiment of the disclosure, a resonant cavity is formed by the reflector M3 and the output coupling mirror M4, and under the action of the Q switch, the loss in the cavity is adjusted, so that the giant pulse light output with the second wavelength is realized.
In the disclosed embodiment, photodetectors 1, 2, and 3 are identical and are used for operating condition monitoring of the IV, V, and VI alkali metal vapor laser gain modules, respectively, in order to monitor the gain generation of these gain modules.
In the disclosed embodiment, the polarization states of the Rb-DPAL beam and the 2.8 μm beam are controlled to couple the two beams with the polarization states perpendicular to each other at the end face of the crystal, as shown in fig. 2. The 2.8 μm light beam enters the gain medium with P polarization relative to the YAP crystal incidence plane and the corresponding incidence angle is thetaB1Rb-DPAL enters the gain medium with S polarization relative to the incident plane of YAP crystal and the corresponding incident angle is thetaB2. The coupling mode utilizes the characteristic of Rb-DPAL polarization output, only needs to plate an antireflection film on the incident surface of Rb-DPAL laser, avoids the problem of end face film damage under the operation of high average power and high peak power, and simultaneously realizes the high-efficiency coupling of Rb-DPAL light beams and 2.8 mu m light beams.
In the embodiment of the present disclosure, as shown in fig. 2, the resonant cavity of the Er-doped laser has a double-concave cavity structure, and an acousto-optic Q-switch is disposed in the cavity to realize a 2.8 μm beam with high peak power. The Q-switch employed in the present disclosure is composed of tellurium dioxide (TeO)2) And (5) manufacturing. By TeO2The laser transmittance of the prepared acousto-optic Q crystal is more than 99 percent and the acousto-optic Q crystal passes through TeO2The acousto-optic effect of the method modulates the loss in the cavity to obtain a giant pulse with the diameter of 2.8 mu m.
Because the erbium-doped crystal has a self-termination effect during continuous pumping, the method adopts a long-pulse pumping mode, and optimizes the optical pulse width of the pump through experimental results; and (3) optimizing the heat dissipation structure of the Er-doped crystal according to the finite element analysis result of the Er-doped crystal during different heat accumulation processes to obtain 2.8 mu m pulsed light which is stably output for a long time.
The alternative technical solution of the present disclosure is as follows:
(1) the photodetector may also measure the left three Rb-DPAL gain blocks to monitor the operating conditions.
(2) The buffer gas in the alkali metal vapor chamber may also be selected from other components such as helium, ethane, etc.
(3) The Rb-DPAL gain blocks need not necessarily be 6 in series, but may be 4 in series, 8 in series, etc.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (9)
1. An erbium doped laser of cascade pumping, comprising:
the resonant cavity comprises a third reflector, a Q switch, an erbium-doped crystal and an output mirror which are arranged in sequence;
the cascade gain unit is used for generating pump light with a first wavelength, pumps the erbium-doped crystal and comprises pump gain modules which are symmetrically arranged on two sides of the erbium-doped crystal respectively and form a set angle with the erbium-doped crystal;
the doping concentration of the erbium-doped crystal is in gradient alternate change, after the erbium-doped crystal is pumped by the pump light with the first wavelength, the erbium-doped crystal generates second wavelength light in the resonant cavity, and the loss in the resonant cavity is adjusted through the Q switch, so that the giant pulse laser with the second wavelength is obtained.
2. The cascade-pumped erbium-doped laser of claim 1, wherein the pump gain modules disposed on both sides of the erbium-doped crystal comprise the same number of alkali metal vapor laser gain modules connected in series.
3. The cascade-pumped erbium doped laser of claim 2, wherein the alkali metal vapor laser gain module comprises:
a semiconductor laser for outputting semiconductor laser light;
the beam shaping module is used for converting the semiconductor laser beam into a flat-top beam with uniformly distributed energy;
the off-axis parabolic mirror is used for reflecting and focusing the flat-top light beam to improve the power density and obtain pumping light;
the alkali metal vapor chamber is filled with an alkali metal simple substance and buffer gas and is used for realizing the particle turnover of the upper energy level and the lower energy level of the alkali metal atomic laser under the action of the pump light; and
and the temperature control furnace is used for controlling the temperature of the alkali metal vapor chamber.
4. An erbium-doped mid-infrared laser as claimed in claim 3, wherein the central light-passing aperture of the off-axis parabolic mirror and the alkali-metal vapor chamber of the capillary structure have cross-sectional diameters in the direction of beam propagation both in the order of mm.
5. The erbium-doped laser of claim 2, wherein the cascade gain unit further comprises a first mirror and a second mirror respectively disposed corresponding to the pump gain modules on both sides of the erbium-doped crystal, so as to form a symmetric n-type folded cavity resonator.
6. The cascade-pumped erbium-doped laser of claim 1, wherein the pump light of the first wavelength and the light of the second wavelength are polarized perpendicular to each other, and polarization coupling is achieved at an end facet of the erbium-doped crystal.
7. The cascade-pumped erbium-doped laser of claim 1, wherein the cavity is a dual-cavity; the Q switch is an acousto-optic Q switch and is made of tellurium dioxide.
8. The cascade-pumped erbium-doped laser as claimed in claim 1, wherein a plurality of photodetectors are disposed in the pump gain modules on both sides of the erbium-doped crystal for monitoring the gain generation of the gain module of the alkali metal vapor laser.
9. The erbium-doped laser of cascade pump of claim 1, wherein the erbium-doped crystal is a YAP crystal doped with erbium ions with alternating concentration gradient to obtain erbium-doped crystal; the erbium-doped crystal is formed by alternately arranging doped sections and undoped sections, and the doping concentration of the doped section in the middle area is higher than that of the doped sections in the areas on the two sides.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1988297A (en) * | 2006-10-27 | 2007-06-27 | 东华大学 | Solid plate strip laser of prism beam expanding technology and semiconductor laser pump |
| CN101483312A (en) * | 2009-02-18 | 2009-07-15 | 中国科学院上海光学精密机械研究所 | End-pumped step-gradient doped composite slab laser amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1988297A (en) * | 2006-10-27 | 2007-06-27 | 东华大学 | Solid plate strip laser of prism beam expanding technology and semiconductor laser pump |
| CN101483312A (en) * | 2009-02-18 | 2009-07-15 | 中国科学院上海光学精密机械研究所 | End-pumped step-gradient doped composite slab laser amplifier |
Non-Patent Citations (1)
| Title |
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| 徐程 等: ""半导体泵浦铷蒸气激光器出光实验"", 《强激光与粒子束》 * |
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