CN103165774B

CN103165774B - A kind of silicon carbide epitaxy light-emitting diode of ledge structure

Info

Publication number: CN103165774B
Application number: CN201310064666.9A
Authority: CN
Inventors: 童小春
Original assignee: LIYANG HONGDA MOTORS CO Ltd
Current assignee: Yangtze River Delta Physics Research Center Co., Ltd.
Priority date: 2013-02-28
Filing date: 2013-02-28
Publication date: 2015-09-23
Anticipated expiration: 2033-02-28
Also published as: CN103165774A

Abstract

The invention discloses a kind of light-emitting diode of ledge structure, the structure of described light-emitting diode is: on silicon substrate (1), have epitaxially grown silicon carbide epitaxial layers (2), and this silicon carbide epitaxial layers (2) has the Al of low temperature buffer layer (3) N-shaped doping successively _0.05in _0.05ga _0.9the n-Al of the superlattice structure of N layer (4), alternately formation _0.05in _0.05ga _0.9n/n-AI _0.05in _0.05ga _0.9the AlGaN layer (6) of P multiple quantum well layer (5), p-type doping, the In of p-type doping _0.05ga _0.95the p-In of the superlattice structure of N layer (7), alternately formation _0.1ga _0.95n/p-In _0.1ga _0.95p multiple quantum well layer (8), the first transparent metal layer (9) and p-type electrode (10), wherein at the Al that described N-shaped adulterates _0.05in _0.05ga _0.9n layer (4) have the second transparent metal layer (11) and n-electrode (12).

Description

A kind of silicon carbide epitaxy light-emitting diode of ledge structure

Technical field

The invention belongs to technical field of semiconductors, particularly a kind of silicon carbide epitaxy light-emitting diode of ledge structure.

Background technology

Semiconductor light-emitting-diode application is increasingly extensive, and in illumination, particularly have the trend replacing incandescent lamp and fluorescent lamp, but also face some technical problems at present, particularly light extraction efficiency is lower.Which results in the defects such as the luminance shortage of light-emitting diode.

Comparatively common light-emitting diode forms GaN resilient coating successively on a sapphire substrate now, the GaN layer of N-shaped doping, InGaN/GaN Multiple Quantum Well, the AlGaN layer of p-type doping and the GaN layer of p-type doping, N-shaped ohmic contact layer, there is p-type ohmic contact layer under substrate, there is following distinct disadvantage in this structure: due to wurtzite structure GaN always along [0001] or [000-1] direction perpendicular to substrate growth, and this both direction polar axis direction exactly, therefore GaN base material can show strong lattice polarization, this polarity effect causing InGaN/GaN multiquantum well region strong.And in the face of day by day miniaturized electronic equipment, the caloric value of the light-emitting diode of existing this structure cannot meet the demand of miniaturized electronic devices day by day.

Compared with general diode, the advantage of carborundum (SiC) based diode is to allow design engineer can consider to reduce the maximum rated current of power diodes, uses the diode that size is less, and can not reduce available horsepower.In the large power, electrically product-derived being usually furnished with radiator, new diode can make these devices less, and power supply supply is compacter, power density becomes higher, can improve switching frequency, makes other components and parts such as filter capacitor and inductance become less, cost is cheaper, and power consumption is lower.Why carborundum (SiC) technology can provide these advantages, is that silicon carbide diode can not accumulation QRR because during normally.When a traditional bipolar silicon diode turns off, must reintegrate between the charge carriers subgroup near diode junction, to disperse the QRR of accumulation.Reverse recovery current is called at the electric current reintegrating period appearance.When to the voltage on relevant semi-conductor electricity source switch in conjunction with time, this unwanted electric current can produce heat, from switch row shed.By eliminating QRR, silicon carbide diode is much lower in the power dissipation ratio conventional diode of circuit board, and this contributes to the efficiency improving circuit board, reduces heat dissipation capacity.Thus the Applicable temperature scope of SiC diode will be wider.

Summary of the invention

The present invention is directed to the problem of prior art, propose the light-emitting diode of the ledge structure that a kind of quantum-well materials alternately changes, by the structure that this quantum-well materials alternately changes, enhance the restriction to electronics and hole, effectively improve the luminous efficiency of light-emitting diode, thus effectively improve the brightness of light-emitting diode, and consider the miniaturization of electronic equipment, the present invention is also on the basis of improving brightness, consider the epitaxial substrate adopting carborundum as diode, thus reduce the power consumption of light-emitting diode, reduce its caloric value.

First to of the present invention " on ", D score defines, in the present invention, by referring to accompanying drawing, of the present invention " on " in accompanying drawing towards direction vertically upward during accompanying drawing.D score of the present invention is towards direction vertically downward during accompanying drawing in accompanying drawing.

The light emitting diode construction that the present invention proposes is: on silicon substrate (1), have epitaxially grown silicon carbide epitaxial layers (2), and this silicon carbide epitaxial layers (2) has the Al of low temperature buffer layer (3) N-shaped doping successively _0.05in _0.05ga _0.9the n-Al of the superlattice structure of N layer (4), alternately formation _0.05in _0.05ga _0.9n/n-Al _0.05in _0.05ga _0.9the AlGaN layer (6) of P multiple quantum well layer (5), p-type doping, the In of p-type doping _0.05ga _0.95the p-In of the superlattice structure of N layer (7), alternately formation _0.1ga _0.9n/p-In _0.1ga _0.9p multiple quantum well layer (8), the first transparent metal layer (9) and p-type electrode (10), wherein at the Al that described N-shaped adulterates _0.05in _0.05ga _0.9n layer (4) have the second transparent metal layer (11) and n-electrode (12).

Wherein, the n-Al alternately formed _0.05in _0.05ga _0.9n/n-Al _0.05in _0.05ga _0.9the concrete structure of P multiple quantum well layer (5) is: first form n-Al _0.05in _0.05ga _0.9n multiple quantum well layer (501), then at this n-Al _0.05in _0.05ga _0.9(501) form n-Al to N multiple quantum well layer _0.05in _0.05ga _0.9p multiple quantum well layer (502), using these two-layer (501) and (502) as one-period, forms 10-20 cycle altogether;

Wherein, the p-In of the superlattice structure alternately formed _0.1ga _0.9n/p-In _0.1ga _0.9the concrete structure of P multiple quantum well layer (8) is: first form p-In _0.1ga _0.9n multiple quantum well layer (801), then at this p-In _0.1ga _0.9(801) form p-In to N multiple quantum well layer _0.1ga _0.9p multiple quantum well layer (802), two-layer as one-period using this, form 15-25 cycle altogether.

Wherein, the material of the first transparent metal layer and the second transparent metal layer is ITO.

Accompanying drawing explanation

The light emitting diode construction schematic diagram that accompanying drawing 1 proposes for the present invention.

Fig. 2 is the close-up schematic view in accompanying drawing 1.

Fig. 3 is the close-up schematic view in accompanying drawing 1.

Embodiment

Embodiment 1

See Fig. 1-3, the light emitting diode construction that the present invention proposes is: on silicon substrate 1, have epitaxially grown silicon carbide epitaxial layers 2, and this silicon carbide epitaxial layers 2 has the Al of low temperature buffer layer 3, N-shaped doping successively _0.05in _0.05ga _0.9the n-Al of the superlattice structure of N layer 4, alternately formation _0.05in _0.05ga _0.9n/n-Al _0.05in _0.05ga _0.9the AlGaN layer 6 of P multiple quantum well layer 5, p-type doping, the In of p-type doping _0.05ga _0.95the p-In of the superlattice structure of N layer 7, alternately formation _0.1ga _0.9n/p-In _0.1ga _0.9p multiple quantum well layer 8, first transparent metal layer 9 and p-type electrode 10, wherein at the Al that described N-shaped adulterates _0.05in _0.05ga _0.9n layer 4 have the second transparent metal layer 11 and n-electrode 12.

Wherein, the n-Al alternately formed _0.05in _0.05ga _0.9n/n-Al _0.05in _0.05ga _0.9the concrete structure of P multiple quantum well layer 5 is: first form n-Al _0.05in _0.05ga _0.9n multiple quantum well layer 501, then at this n-Al _0.05in _0.05ga _0.9n multiple quantum well layer 501 forms n-Al _0.05in _0.05ga _0.9p multiple quantum well layer 502, using this two-layer 501 and 502 as one-period, forms 10-20 cycle altogether;

Wherein, the p-In of the superlattice structure alternately formed _0.1ga _0.9n/p-In _0.1ga _0.9the concrete structure of P multiple quantum well layer 8 is: first form p-In _0.1ga _0.9n multiple quantum well layer 801, then at this p-In _0.1ga _0.9n multiple quantum well layer 801 forms p-In _0.1ga _0.9p multiple quantum well layer 802, two-layer as one-period using this, form 15-25 cycle altogether.

Embodiment 2

Introduce the preferred embodiments of the present invention below, the preferred embodiment is in the light emitting diode construction that proposes of the present invention, the structure of brightness optimum.

Wherein, the n-Al alternately formed _0.05in _0.05ga _0.9n/n-Al _0.05in _0.05ga _0.9the concrete structure of P multiple quantum well layer 5 is: first form n-Al _0.05in _0.05ga _0.9n multiple quantum well layer 501, then at this n-Al _0.05in _0.05ga _0.9n multiple quantum well layer 501 forms n-Al _0.05in _0.05ga _0.9p multiple quantum well layer 502, using this two-layer 501 and 502 as one-period, forms 10 cycles altogether;

Wherein, the p-In of the superlattice structure alternately formed _0.1ga _0.9n/p-In _0.1ga _0.9the concrete structure of P multiple quantum well layer 8 is: first form p-In _0.1ga _0.9n multiple quantum well layer 801, then at this p-In _0.1ga _0.9n multiple quantum well layer 801 forms p-In _0.1ga _0.9p multiple quantum well layer 802, two-layer as one-period using this, form 20 cycles altogether.

So far, foregoing description specifically understands light emitting diode construction of the present invention, and relative to existing light-emitting diode, the structure that the present invention proposes can increase substantially luminosity and reduce the power consumption of diode.The embodiment of description is above only the preferred embodiments of the present invention, and it is not intended to limit the present invention.Those skilled in the art, under the prerequisite not departing from spirit of the present invention, can make any amendment, and protection scope of the present invention are limited to the appended claims to the present invention.

Claims

1. a light-emitting diode for ledge structure, is characterized in that: there is epitaxially grown silicon carbide epitaxial layers (2) on silicon substrate (1), this silicon carbide epitaxial layers (2) have low temperature buffer layer (3) successively, N-shaped doping Al _0.05in _0.05ga _0.9the n-Al of the superlattice structure of N layer (4), alternately formation _0.05in _0.05ga _0.9n/n-Al _0.05in _0.05ga _0.9the AlGaN layer (6) of P multiple quantum well layer (5), p-type doping, the In of p-type doping _0.05ga _0.95the p-In of the superlattice structure of N layer (7), alternately formation _0.1ga _0.9n/p-In _0.1ga _0.9p multiple quantum well layer (8), the first transparent metal layer (9) and p-type electrode (10), wherein at the Al that described N-shaped adulterates _0.05in _0.05ga _0.9n layer (4) have the second transparent metal layer (11) and n-electrode (12).

2. light-emitting diode as claimed in claim 1, is characterized in that:

Wherein, the n-Al alternately formed _0.05in _0.05ga _0.9n/n-Al _0.05in _0.05ga _0.9the concrete structure of P multiple quantum well layer is: first form n-Al _0.05in _0.05ga _0.9n multiple quantum well layer, then at this n-Al _0.05in _0.05ga _0.9n multiple quantum well layer forms n-Al _0.05in _0.05ga _0.9p multiple quantum well layer, with n-Al _0.05in _0.05ga _0.9n multiple quantum well layer and n-Al _0.05in _0.05ga _0.9p multiple quantum well layer, as one-period, forms 10-20 cycle altogether.

3. light-emitting diode as claimed in claim 1 or 2, is characterized in that:

Wherein, the p-In of the superlattice structure alternately formed _0.1ga _0.9n/p-In _0.1ga _0.9the concrete structure of P multiple quantum well layer is: first form p-In _0.1ga _0.9n multiple quantum well layer, then at this p-In _0.1ga _0.9n multiple quantum well layer forms p-In _0.1ga _0.9p multiple quantum well layer, with p-In _0.1ga _0.9n multiple quantum well layer and p-In _0.1ga _0.9p multiple quantum well layer, as one-period, forms 15-25 cycle altogether.

4. light-emitting diode as claimed in claim 2, is characterized in that:

The material of described first transparent metal layer and described second transparent metal layer is ITO.