CN103165629A - Flat plate type X-ray image sensor - Google Patents
Flat plate type X-ray image sensor Download PDFInfo
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- CN103165629A CN103165629A CN2011104173839A CN201110417383A CN103165629A CN 103165629 A CN103165629 A CN 103165629A CN 2011104173839 A CN2011104173839 A CN 2011104173839A CN 201110417383 A CN201110417383 A CN 201110417383A CN 103165629 A CN103165629 A CN 103165629A
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Abstract
The invention discloses a flat plate type X-ray image sensor. Due to the fact that protective pixels are arranged on a pixel array, when a large current which is caused by static electricity passes through a data line, short-circuit of a data line and public electrode wires which are located on two sides of the data line can be avoided. The flat plate type X-ray image sensor comprises the pixel array which is formed in a base plate and a public electrode bus which is located on the periphery of the pixel array. The pixel array comprises a plurality of data lines, scanning lines which cross with the plurality of data lines and pixel units which are located in an area of the scanning lines and the data lines. The pixel array further comprises at least one line of protective pixels, each protective pixel comprises a public electrode, and the public electrode is electrically connected with the public electrode bus through a conducting layer.
Description
Technical field
The present invention relates to sensor technical field, relate in particular to a kind of plate type X-ray imageing sensor.
Background technology
The function element of completing the image information light-to-current inversion is called electro-optical imaging sensors, and the plate type X-ray imageing sensor is a kind of electro-optical imaging sensors, is usually used in medical field.For example, X ray is surveyed by the plate type X-ray imageing sensor after passing human body, and the intensity distributions of X ray is shown in display with different GTG forms, can see comparatively intuitively like this result that human body detects through X ray.Thin-film transistor on the substrate of plate type X-ray imageing sensor (Thin Film Transistor; TFT), usually the electrostatic damage phenomenon can occur, electrostatic damage generally occurs in radioscopic image manufacturing of the fiber grating sensors process; in case the generation static discharge is easy to damage the TFT device.Because, TFT is formed on the dielectric substrate glass substrate, electric charge on the TFT electrode easily runs up to higher voltage levvl, when the electrostatic charge on electrode runs up to a certain degree, the source electrode, the drain electrode that separate TFT, just possible breakdown with the insulating thin layer of gate electrode, cause being short-circuited between source electrode, gate electrode, drain electrode, even it is breakdown that the insulating thin layer between source electrode and gate electrode does not have, also can cause source electrode and gate electrode to have voltage differences, make the operating characteristic of TFT change.
At present, for the plate type X-ray imageing sensor of not protecting pixel, if when static was not too serious, electrostatic induced current can puncture the TFT of pel array, make the data wire and the scan line short circuit that is connected the TFT grid that connect the TFT source electrode.When if static is more serious, can cause the public electrode wire short circuit of data wire and its both sides, perhaps cause this public electrode wire to be blown, make the part TFT device that is connected with this public electrode wire because not having common electric voltage to work.And, when having TFT damaged, need to TFT and data wire be kept apart with laser the close together of TFT and data wire on pel array, approximately 8
, laser is easy to data wire is interrupted, and causes the damage of certain data lines.
Prior art; by be provided with short-circuit ring structure between data wire and public electrode wire; when having the large electric current that is caused by static to pass through on data wire; short-circuit ring structure is released the electric charge of assembling on data wire; avoid occurring the electrostatic breakdown phenomenon, thereby protected data line and the first film transistor can be not destroyed.But described short-circuit ring structure is arranged on pixel region, has not only reduced the aperture opening ratio of pixel, and its manufacture craft is more complicated also, even is difficult to control.And prior art is provided with a short-circuit ring structure incessantly at a pixel region, causes the noise of pixel larger, and leakage current is also larger.
Summary of the invention
The embodiment of the present invention provides a kind of plate type X-ray imageing sensor, in order to solve when have on data wire the large electric current that caused by static by the time, the electrostatic breakdown phenomenon appears, cause the problem of data wire and the public electrode wire short circuit that is positioned at data wire both sides.
The plate type X-ray imageing sensor that the embodiment of the present invention provides comprises:
Be formed on pel array and the public electrode bus that is positioned at described pel array periphery on substrate, the scan line that described pel array comprises many data lines, intersect with described many data lines and be positioned at described scan line and the pixel cell of data wire institute region
Described pel array also comprises delegation's protection pixel at least;
Each protection pixel comprises public electrode, and this public electrode is electrically connected to by conductive layer and described public electrode bus.
The embodiment of the present invention, delegation protects pixel by arranging at least on pel array, and each protection pixel comprises public electrode, and this public electrode is electrically connected to by conductive layer and the public electrode bus that is positioned at the pel array outer peripheral areas.There is the large electric current that is caused by static to pass through on data wire; when data wire and described public electrode short circuit; large electric current can be led away large electric current moment by the conductive layer that is connected with the public electrode bus; perhaps with described protection pixel damage, can and not be positioned at the public electrode wire short circuit of data wire both sides with data wire in pel array.
Description of drawings
The plate type X-ray imageing sensor schematic cross-section that Fig. 1 provides for the embodiment of the present invention;
The plate type X-ray imageing sensor side schematic view that Fig. 2 provides for the embodiment of the present invention;
The plate type X-ray imageing sensor vertical view that Fig. 3 provides for the embodiment of the present invention;
The structural representation of the protection pixel that Fig. 4 provides for the embodiment of the present invention;
The plate type X-ray imageing sensor vertical view that Fig. 5 provides for the embodiment of the present invention;
The plate type X-ray imageing sensor vertical view that Fig. 6 provides for the embodiment of the present invention;
The plate type X-ray imageing sensor vertical view that Fig. 7 provides for the embodiment of the present invention;
The pel array schematic diagram of the plate type X-ray imageing sensor that Fig. 8 provides for the embodiment of the present invention;
The pixel cell structure schematic diagram of the plate type X-ray imageing sensor that Fig. 9 provides for the embodiment of the present invention.
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Embodiment
The embodiment of the present invention provides a kind of plate type X-ray imageing sensor; in order to solve when having the large electric current that is caused by static to pass through on data wire; the electrostatic breakdown phenomenon appears; cause data wire and gate line or be positioned at the public electrode wire of data wire both sides and the problem of data wire short circuit; and after the protection pixel is wounded; in the process to its reparation, can there be the danger that data wire or public electrode wire are interrupted.
Below in conjunction with accompanying drawing, the technical scheme that the embodiment of the present invention provides is described.
referring to Fig. 1, amorphous silicon (a-si) thin-film transistor (Thin Film Transistor, TFT) operation principle of plate type X-ray imageing sensor is: when the illumination of X ray (X-Ray) was mapped to the flash layer cesium iodide (CsI Scintillator material) of imageing sensor when upper, flash layer is converted into visible light with X-ray, and shine on photodiode (Photo diode), photodiode sensitization also produces photoelectron, photoelectron is stored in storage capacitance (for example electric capacity of described diode or custom-designed storage capacitance), the photoelectron read-out system is controlled the grid (Gate) of the TFT on the plate type X-ray imageing sensor, make corresponding grid (Gate) open line by line, and read photoelectron.The described photoelectron of reading is converted to digital signal, and this digital signal is sent in computer system, demonstrate image.Described transducer is arranged on glass substrate (Glass Substrate), and photodiode (Photo diode) is connected with TFT by bottom electrode (Bottom Electrode); Described photodiode is also light sensor.
Referring to Fig. 2, a kind of plate type X-ray imageing sensor that the embodiment of the present invention provides comprises:
Be formed on pel array 2 and the public electrode bus 3 that is positioned at described pel array 2 peripheries on substrate 1.Referring to Fig. 3, described pel array 3 comprise many data lines S1, S2 ..., Sn, (n=1,2,3 ...), scan line G1, the G2 that (only having shown 3 data lines S1, S2 and S3 in figure) and described many data lines are intersected, G3 ..., Gm, (m=1,2,3 ...) (only having shown 6 scan line G1, G2, G3, G4, G5 and G6 in figure) and be positioned at described scan line Sx (x=1,2,3 ...) and data wire Gy (y=1,2,3 ...) pixel cell of institute's region.As being provided with a pixel cell in dotted line institute region in Fig. 3.Described pel array 3 comprises delegation's protection pixel at least; with the non-protection pixel of several rows (pixel except the protection pixel); be the protection pixel as the first row in Fig. 3 (R1) pixel; the second row (R2) and the third line (R3) pixel are non-protection pixel; each protection pixel comprises public electrode 311, and this public electrode 311 is electrically connected to by conductive layer 312 and described public electrode bus 3.
Each non-protection pixel comprises a public electrode 311, and this public electrode 311 is electrically connected to public electrode bus 3 by the public electrode wire 33 that is positioned at data wire (as S2) both sides.
As seen from Figure 3; the public electrode 311 of above-mentioned each protection pixel is electrically connected to by conductive layer 312 and public electrode bus 3; outside the public electrode wire 33 that is positioned at data wire (as S2) both sides that this conductive layer 312 is independent of with non-protection pixel is connected; keep certain distances with this public electrode wire 33, and with data wire S2 at a distance of approximately 40
The left and right.When a certain protection pixel during by electrostatic breakdown; the data wire that is connected with this protection pixel with the conductive layer 312 that is connected with this protection pixel with short circuit; and the public electrode wire 33 that is connected with non-protection pixel is not subjected to electrostatic influence, and this protection pixel has been protected the impact of avoiding static with its non-protection pixel that shares a data lines.When described electrostatic induced current hour, described conductive layer 312 can be led away the electric current on data wire by the public electrode bus 3 of pel array periphery; When described electrostatic induced current was larger, large electric current can blow described conductive layer 312.The sort circuit design has been protected data wire and the public electrode wire of non-protection pixel, makes when static occurs, and can and not be positioned at the public electrode wire short circuit of its both sides or described public electrode wire is blown the data wire of non-protection pixel.In fact, this protection pixel is exactly by the pixel of electrostatic damage, after it is wounded, can be repaired immediately.
Referring to Fig. 3, when an above-mentioned data wire and conductive layer 312 short circuit, need to the circuit reparation after this short circuit, be about to data wire and conductive layer and in time isolate, the conductive layer reparation that perhaps will blow.Otherwise, can make imageing sensor when working on power, in non-protection pixel, the operating characteristic of TFT changes, and exports abnormal image.This be because, under normal circumstances, imageing sensor is when working on power, and the voltage on public electrode bus 33 is generally negative, as-10V, voltage on data wire is for just, as+15V, when data wire and conductive layer are short-circuited, voltage higher on data wire is pulled down to lower voltage by conductive layer, make the operating characteristic of imageing sensor TFT change, export abnormal image.
Above-mentioned conductive layer 312 and data wire apart from each other, with nearest data wire at least at a distance of 40
, utilize in the process that laser isolates the described conductive layer that is short-circuited 312 and data wire, only need to be with conductive layer 312 and 3 isolation of public electrode bus, so do not have the danger that data wire is interrupted.Data wire is in case interrupted the normal operation that will affect partial pixel on data wire.
Preferably, referring to Fig. 4, described each protection pixel 32 also comprises thin-film transistor TFT40; The source electrode 400 of the TFT40 of each protection pixel is connected with described data wire Sy; The drain electrode 401 of the TFT of each protection pixel is connected with storage capacitance 403; Gate electrode 402 suspension joints of the TFT of each protection pixel namely are not electrically connected to grid line Gx-1.
Above-mentioned gate electrode to TFT carries out the suspension joint setting; namely this gate electrode is not connected with any electrode yet; be pel array figure after delegation protection pixel R1 suspension joint as Fig. 5, can avoid like this static to cause gate electrode and source electric pole short circuit, i.e. data wire and scan line short circuit.And, the situation of scan line and data wire short circuit and data wire and public electrode wire short circuit in the prior art of comparing, the present invention's easy reparation after the protection pixel is destroyed, the protection pixel is after by damage by static electricity, do not have the risk that data wire and scan line are shorted together, so only conductive layer and the disconnection of public electrode bus need to be got final product, repair simple; And if to repair in prior art, need to TFT be separated with data wire and/or scan line with laser, in this process, data wire and/or scan line might be interrupted; Even without interrupting, there are the risk that is corroded in data wire and/or the scan line crossed by laser repairing.
In above-mentioned process disconnecting conductive layer and public electrode bus; only imageing sensor need to be protected protective layer corresponding to pixel to remove; on protective layer corresponding to the non-protection pixel on pel array without any impact; the data wire of non-protection pixel and scan line can because of the protection pixel is repaired and the exposed phenomenon outside of circuit is occured, can not cause the circuit of non-protection pixel to be corroded.
Preferably; the imageing sensor that the embodiment of the present invention provides; its pel array can comprise multirow protection pixel; for example; two protection pixels are set on every data lines; and described two end or other ends of protecting pixels can be arranged on simultaneously data wire, a protection pixel perhaps respectively is set at the two ends of data wire, make pel array comprise two row protection pixels.Pel array as shown in Figure 6, comprising two row protection pixel R1 and R3, R2 is the non-protection pixel of delegation, certainly in actual applications, the non-protection pixel between two row protection pixels is far away more than delegation.Be provided with two protection pixels in Fig. 6 on every data lines, lay respectively at that R1 is capable and R3 is capable, namely be arranged at respectively the two ends of this data wire.As preferred embodiment, can R1 and R2 be set to protect pixel, R3 is set to non-protection pixel; Perhaps R2 and R3 are set to protect pixel, and R1 is set to non-protection pixel.In addition; also can plural protection pixel (i.e. protection pixel more than two row) be set on every data lines; for example three or four; general is the pel array of 3072*3072 for pixel resolution; four protection pixels are set on every data lines, can have guaranteed that data wire is not subjected to the destruction of static.
Preferably, described protection pixel is the outermost pixel of described pel array, and this is that namely the outermost pixel of pel array is vulnerable to static damage because static generally occurs in the outermost of pel array.In addition; in protection pixel and pixelated array, the structure of non-protection pixel is identical; in pel array manufacturing process; only need the one-row pixels of making more; with the outermost pixel of pel array as the protection pixel; do not need the different protection pixel of design in addition, simplified the technique of the imageing sensor with whole electrostatic-proof function and made flow process.Different is on the annexation of the public electrode of each pixel, change to have occured.The public electrode of protection pixel needs in addition, and plating one deck conductive layer is connected with the public electrode bus; the public electrode of non-protection pixel is connected with the public electrode bus by the public electrode wire of data wire both sides; and in pixel manufacturing process; to not make the grid line (as Fig. 5, shown in Figure 6) of protection pixel, perhaps make the grid line of protection pixel but make grid line discord grid connect getting final product (as shown in Figure 4).In fact, only will do following 2 adjustment as the outermost pixel of the pel array of imageing sensor, can obtain protection pixel of the present invention: 1) gate electrode of the TFT of pel array outermost pixel cell is not connected with any electrode, i.e. suspension joint; 2) public electrode of pel array outermost pixel cell is connected with the public electrode bus by the conductive layer that is independent of the public electrode wire that is connected with the public electrode of other pixel cells.
Preferably, pel array also comprises at least one row protection pixel.Be on the basis of above-mentioned pel array, at outermost data wire, namely on Far Left one data lines and rightmost one data lines, the protection pixel be set.As shown in Figure 7, a row protections pixel of the rightmost side and the shared data lines of the non-protection pixel of adjacent columns L4, the public electrode 311 of this protection pixel is connected with the public electrode bus 3 that is positioned at the pel array rightmost side by conductive layer 312.The design of this protection pixel can protect non-protection pixel not to be subjected to the injury of static better.
The pel array with protection pixel that provides in embodiment of the present invention Fig. 1-Fig. 7 adopts following design:
Referring to Fig. 3, the two adjacent row pixels in described pel array share a data lines, as secondary series (L2) and the 3rd row (L3) shared data line S2, namely are connected with upper all pixels of two row L2 and L3 on a data lines S2.And the every delegation pixel in described pel array shares two scan lines, share scan line G3 and G4 as the second row (R2) pixel, be specially, pixel on the upper odd column of R2 as the pixel on L1 in Fig. 3 and L3, is connected with scan line wherein, as the scan line G3 in Fig. 3, pixel on even column is connected with another root scan line, and as the scan line G4 in Fig. 3, described two scan lines are adjacent.
Described pel array is not limited to the design of above-mentioned pel array, it can be also pel array as shown in Figure 8, wherein, each row pixel of described pel array shares a data lines Sy (wherein, y=1,2,3 ..., n), and every delegation pixel of described pel array share a scan line Gx (wherein, x=1,2,3 ..., m), each row pixel, the public electrode 311 of each pixel is connected with public electrode wire 33.
As shown in Figure 9, the pixel cell that the embodiment of the present invention provides also comprises light sensor 35, and in Fig. 9,33 is public electrode wire, and Sy is data wire, and Gx and Gx+1 are two adjacent scan lines.
The structure of described light sensor is laminated construction.
Protection pixel of the present invention and non-protection pixel are positioned at the zones of different of array base palte; namely protect pixel to be arranged on outside non-protection pixel cell, be arranged on short-circuited conducting sleeve in non-protection pixel with respect to prior art, increased the aperture opening ratio of pixel; also reduce leakage current, reduced noise.
The embodiment of the present invention, delegation protects pixel by arranging at least on pel array, and each protection pixel comprises public electrode, and this public electrode is electrically connected to by conductive layer and the public electrode bus that is positioned at the pel array outer peripheral areas.There is the large electric current that is caused by static to pass through on data wire, when data wire and described public electrode short circuit, large electric current can be led away large electric current moment by the conductive layer that is connected with the public electrode bus, can and not be positioned at the public electrode wire short circuit of data wire both sides with data wire in pel array.And the reparation of the protection pixel after damage by static electricity is more prone to, only need conductive layer and public electrode Bus isolation, in the process of isolation, do not have the danger that data wire and/or scan line are interrupted.This protection pixel can be for the outermost pixel of non-protection pixel, and is simple in structure.Described protection pixel is arranged on outside non-protection pixel cell, and aperture opening ratio is higher, and leakage current and noise are less.And in described protection pixel, the gate electrode of TFT is not connected with any electrode, has avoided connecting the scan line of this gate electrode and the data wire of the source electrode that is connected this TFT is short-circuited.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of claim of the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. plate type X-ray imageing sensor, comprise the pel array that is formed on substrate and the public electrode bus that is positioned at described pel array periphery, the scan line that described pel array comprises many data lines, intersect with described many data lines and be positioned at described scan line and the pixel cell of data wire institute region is characterized in that:
Described pel array comprises delegation's protection pixel at least;
Each protection pixel comprises public electrode, and this public electrode is electrically connected to by conductive layer and described public electrode bus.
2. plate type X-ray imageing sensor according to claim 1, is characterized in that, each protection pixel also comprises thin-film transistor TFT;
The source electrode of the TFT of each protection pixel is connected with described data wire;
The drain electrode of the TFT of each protection pixel is connected with storage capacitance;
The gate electrode suspension joint of the TFT of each protection pixel.
3. plate type X-ray imageing sensor according to claim 2, is characterized in that, each data lines is connected with the source electrode of the TFT of two protection pixels.
4. plate type X-ray imageing sensor according to claim 1, is characterized in that, described protection pixel is the outermost pixel of described pel array.
5. plate type X-ray imageing sensor according to claim 1, is characterized in that, described pel array also comprises at least one row protection pixel.
6. plate type X-ray imageing sensor according to claim 1, is characterized in that, the two adjacent row pixels in described pel array share a data lines, and the every delegation pixel in described pel array shares two scan lines.
7. plate type X-ray imageing sensor according to claim 1, is characterized in that, each row pixel of described pel array shares a data lines, and every delegation pixel of described pel array shares a scan line.
8. plate type X-ray imageing sensor according to claim 1, is characterized in that, described pixel cell also comprises light sensor.
9. plate type X-ray imageing sensor according to claim 8, is characterized in that, the structure of described light sensor is laminated construction.
10. plate type X-ray imageing sensor according to claim 1, is characterized in that, the public electrode of the non-protection pixel in described pel array is electrically connected to described public electrode bus by public electrode wire.
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Cited By (3)
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| CN103928477A (en) * | 2013-12-20 | 2014-07-16 | 上海天马微电子有限公司 | Back-through reflection type pixel unit and flat plate sensor |
| CN109427266A (en) * | 2017-09-01 | 2019-03-05 | 创王光电股份有限公司 | Display system |
| CN110763332A (en) * | 2018-07-25 | 2020-02-07 | 群创光电股份有限公司 | Light ray detection device |
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