CN103160831A - Etching solution composition for formation of metal line - Google Patents
Etching solution composition for formation of metal line Download PDFInfo
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- CN103160831A CN103160831A CN201210435347XA CN201210435347A CN103160831A CN 103160831 A CN103160831 A CN 103160831A CN 201210435347X A CN201210435347X A CN 201210435347XA CN 201210435347 A CN201210435347 A CN 201210435347A CN 103160831 A CN103160831 A CN 103160831A
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- base metal
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- molybdenum base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
Abstract
The invention relates to an etching solution composition, which can be used for etching of a plurality of layers including an IZO transparent conductive layer, an aluminum and aluminum alloy layer (named aluminum-based metal layer), a molybdenum and molybdenum alloy layer (named molybdenum-based metal layer). The plurality of layers can be used as lines of pixel electrodes, grids, sources, and drains. In addition, a method of using the etching solution composition to produce the thin film transistor.
Description
The cross reference of related application
The rights and interests that No. 10-2011-0135864th, the korean patent application that the application's request is submitted on December 15th, 2011, this patent application is incorporated in the application in full by reference.
Technical field
The present invention relates to a kind of a kind of etchant and method of manufacturing thin film transistor that is applicable to wet etching metal level when manufacturing semiconducter device, more specifically, relate to by improving the etching selectivity to different I n base transparency conducting layer, the etchant that comprises the multilayer of In base transparency conducting layer, Al Base Metal layer and Mo Base Metal layer for etching simultaneously, this multilayer is used to form pixel electrode, grid, source electrode and the drain electrode of flat-panel monitor, and relates to a kind of method of utilizing described etching solution to manufacture thin film transistor.
Background technology
In order to realize showing image by flat-panel monitor, use transparent pixels electrode, grid, source electrode and drain electrode in TFT (thin film transistor) array.Usually, pixel electrode comprises the transparency conducting layer mainly be comprised of In, and grid, source electrode and drain electrode can comprise the single or multiple lift mainly be comprised of Cr, Cu, Mo, Ti, Al etc.
Along with the simplification of recent production process to boost productivity, developing the gate line that has four layers, described four layers comprise: the In base transparency conducting layer consisted of the tin indium oxide that is deposited on the orlop position (ITO or amorphous ITO), be deposited on and comprise Mo Base Metal upper strata and Mo Base Metal lower floor and the Al Base Metal layer between Mo Base Metal upper strata and Mo Base Metal lower floor three layers on In base transparency conducting layer.In addition, the newly developed data line that has four layers, described four layers comprise: utilize In as main component be deposited as upper strata indium zinc oxide (IZO) thin layer, comprise Mo Base Metal upper strata and Mo Base Metal lower floor and the Al Base Metal layer between Mo Base Metal upper strata and Mo Base Metal lower floor three layers below the indium zinc oxide thin layer.For the etch-gate polar curve, orlop ITO thin layer is not etched, and three layers (Mo Base Metal upper strata and Mo Base Metal lower floor and the Al Base Metal layers between Mo Base Metal upper strata and Mo Base Metal lower floor) only being formed on orlop must optionally be etched simultaneously.On the other hand, in the situation that data line, need exploitation combination etching solution, the etching simultaneously of this etching solution comprises the thin layer of the IZO as the superiors mainly is comprised of In and is formed on three layers (Mo Base Metal upper strata and Mo Base Metal lower floor reach the Al Base Metal layers between Mo Base Metal upper strata and Mo Base Metal lower floor) below the superiors totally four layers.
In the situation that comprise traditional multilayer of Al Base Metal layer and Mo Base Metal layer, can use the Al etching solution etching mainly formed by phosphoric acid.Yet, when comprising the IZO thin layer mainly formed by In and being formed on Mo Base Metal upper strata and Mo Base Metal lower floor and the Al Base Metal layer between Mo Base Metal upper strata and Mo Base Metal lower floor three layers above-mentioned four layers while utilizing the main traditional etching solution etching formed by phosphoric acid of comprising below the IZO thin layer, as the IZO of upper strata In base transparency conducting layer with more etched than being positioned at the slow etch-rate of Mo Base Metal layer below In base transparency conducting layer and Al Base Metal layer, therefore, the outstanding tip that produces due to the upper strata IZO thin layer from etched surfaces, produce undesirably profile inferior.Because seriously produce most advanced and sophisticated profile inferior, in technique subsequently, Step Coverage (step coverage) can be deteriorated, and upper strata destroyed possibility or possibility of the upper and lower short circuit metal on inclined-plane can improve.
Therefore, in order effectively to carry out the multilayer etching simultaneously, need a kind of etching solution of exploitation, this etching solution has excellent etch capabilities to Al Base Metal layer and Mo Base Metal layer, and can be by etching IZO thin layer effectively and not etching ITO thin layer minimizes most advanced and sophisticated generation.
Patent documentation 1: Korean unexamined patent publication number 2002-0043402
Summary of the invention
Therefore, keep the problems referred to above that exist in association area firmly in mind, made the present invention, an object of the present invention is to provide a kind of etchant, described etchant is excellence aspect etching IZO transparency conducting layer, Al Base Metal layer and Mo Base Metal layer, and can etching ITO (or amorphous ITO) transparency conducting layer.Particularly, the present invention aims to provide a kind of etchant, but described etchant etching IZO, thereby the generation at its tip reduces, and thus effectively etching simultaneously comprise the multilayer of IZO transparency conducting layer, Al Base Metal layer and Mo Base Metal layer.
The invention provides a kind of etchant, the gross weight based on composition, described etchant comprises: the acetic acid of the phosphoric acid of 60～70wt%, the nitric acid of 2～8wt%, 5～15wt%, 0.1～7wt% are selected from K
3pO
4, K
2hPO
4, KH
2pO
4, CH
3cO
2k and KNO
3in at least one K compounds and add so that the gross weight of described composition reaches the excess water of 100wt%, wherein, ITO is not etched, and simultaneously etching comprises the multilayer of IZO transparency conducting layer, Al Base Metal layer and Mo Base Metal layer.
In addition, the invention provides a kind of method of manufacturing thin film transistor, comprise: utilize the etching solution etching to have the metal-layer structure of four layers, described four layers comprise: ITO (ITO or a-ITO) class transparency conducting layer, be deposited on and comprise Mo Base Metal upper strata and Mo Base Metal lower floor and the Al Base Metal layer between described Mo Base Metal upper strata and Mo Base Metal lower floor three layers on described ITO class transparency conducting layer, gross weight based on composition, described etching solution comprises: the phosphoric acid of 60～70wt%, the nitric acid of 2～8wt%, the acetic acid of 5～15wt%, 0.1～7wt% is selected from K
3pO
4, K
2hPO
4, KH
2pO
4, CH
3cO
2k and KNO
3in at least one K compounds and add so that the gross weight of described composition reaches the excess water of 100wt%, thereby the described ITO class transparency conducting layer that is positioned at the lower floor position is not etched, and be formed on three layers of quilt etching simultaneously on described ITO class transparency conducting layer, form thus gate line, and utilize the etching simultaneously of described etching solution to have the metal-layer structure of four layers, described four layers comprise: comprise Mo Base Metal upper strata and Mo Base Metal lower floor and the Al Base Metal layer between described Mo Base Metal upper strata and Mo Base Metal lower floor three layers and be deposited on the IZO class transparency conducting layer on described three layers, forming thus data line.
Embodiment
To provide detailed description of the present invention hereinafter.
According to the present invention, comprise that for etching the gross weight of etchant based on composition of the multilayer of IZO transparency conducting layer, Al Base Metal layer and Ti Base Metal layer comprises: the acetic acid of the phosphoric acid of 60～70wt%, the nitric acid of 2～8wt%, 5～15wt%, 0.1～7wt% are selected from K
3pO
4, K
2hPO
4, KH
2pO
4, CH
3cO
2k and KNO
3in at least one K compounds and add so that the gross weight of composition reaches the excess water of 100wt%.
As used herein, In base transparency conducting layer refers to the main transparency conducting layer be comprised of In as pixel electrode, and its specific example can comprise indium oxide layer, such as indium zinc oxide layer (IZO), indium tin oxide layer (ITO, a-ITO) etc.The etching solution mainly be comprised of phosphoric acid according to the present invention has very high etching selectivity to IZO and ITO.The ITO layer of grid has low-down etch-rate, therefore do not carry out etching within process period, and the IZO of data line has the etch-rate relatively higher than ITO layer, and etching simultaneously comprises the multilayered structure of Mo and Al thus.
Al Base Metal layer refers to the Al layer or the Al alloy layer that mainly are comprised of Al.Al base alloy layer can be the Al-X alloy layer (wherein, X is one or more metals that are selected from La, Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt and C) with Al and other metals.The situation that the Al-X alloy layer is used as to Al Base Metal layer is favourable, because can avoid the processing problems caused by forming of Al etch hill, wherein, the formation of Al etch hill is by due to heat.
Mo Base Metal layer refers to the Mo layer or the Mo alloy layer that mainly are comprised of Mo, and Mo Base Metal layer plays shock absorption to the electrolytic reaction between thin layer.The Mo alloy layer will be by forming as the Mo of main component and one or more metal alloys that are selected from Ti, Ta, Cr, Ni, Nd, In and Al.
In the situation that gate line, multilayer of the present invention provides with the form of four layers, and described four layers comprise: as the ITO transparency conducting layer of lower floor, and Mo Base Metal layer, Al Base Metal layer, and Mo Base Metal layer, these layers form in order.In the situation that data line provides totally four layers, described four layers comprise: be positioned at IZO transparency conducting layer, and Mo Base Metal layer, Al Base Metal layer, and the Mo Base Metal layer on upper strata, these layers form in order.
In etchant of the present invention, phosphoric acid plays oxidation Al Base Metal layer and Mo Base Metal layer, and the gross weight based on composition, with the amount of 60～70wt%, comprises.If the amount of phosphoric acid is less than 60wt%, the etch-rate of Al Base Metal layer or Mo Base Metal layer may reduce, and causes undesirably producing the risk of residue.On the contrary, if the amount of phosphoric acid is greater than 70wt%, the etch-rate of Al Base Metal layer or Mo Base Metal layer is too fast, and that the etch-rate of IZO transparency conducting layer may become is relatively slow, greatly increases undesirably most advanced and sophisticated generation.
In etchant of the present invention, nitric acid plays oxidation IZO layer at transparent layer, Al Base Metal layer surface and Mo Base Metal layer surface, and the gross weight based on composition, with the amount of 2～8wt%, comprises.If the amount of nitric acid is less than 2wt%, the etch-rate of Al Base Metal layer and Mo Base Metal layer may reduce, the etch-rate difference that this finally causes at the different positions place of substrate, produce the flaw that the hangover (tailing) by Mo Base Metal layer causes undesirably.On the contrary, if the amount of nitric acid is greater than 8wt%, on photoresist material, may form crack, chemical substance may be infiltrated by these cracks thus, causes undesirably the short circuit between Al Base Metal layer and Mo Base Metal layer.And, owing to crossing etching meeting loss Al Base Metal layer and Mo Base Metal layer, cause undesirably the worry of these metal wire functions of loss.
In the present invention, the surface of acetic acid oxidation IZO transparency conducting layer, Al Base Metal layer and Mo Base Metal layer, and the gross weight based on composition, comprise with the amount of 5～15wt%.If the amount of acetic acid is less than 5wt%, IZO transparency conducting layer, Al Base Metal layer and Mo Base Metal layer be not by etching effectively, and Al and Mo may partly remain in substrate undesirably thus.On the contrary, if the amount of acetic acid is greater than 15wt%, Mo and Al may cross etching, thereby can not obtain the etching of homogeneous.
In etchant of the present invention, the K salt compounds is for being selected from K
3pO
4, K
2hPO
4, KH
2pO
4, CH
3cO
2k and KNO
3in one or more, play a part to regulate oxidized Al Base Metal layer and the etching outline of Mo Base Metal layer, and the gross weight based on composition, with the amount of 0.1～7wt%, preferably the amount of 1～5wt% comprises.If the amount of K salt compounds is less than 0.1wt%, the etch-rate of Mo Base Metal layer may increase relatively, and the IZO tip may seriously be formed in data line thus.On the contrary, if the amount of K salt compounds is greater than 7wt%, the etch-rate of Al Base Metal layer and Mo Base Metal layer may reduce very significantly, produces residue undesirably on Al Base Metal layer and Mo Base Metal layer, causes thus defect.
The K compounds is preferably used with the form of mixtures of two kinds of components, more preferably to comprise KNO
3be selected from K
3pO
4, K
2hPO
4, CH
3cO
2k and KH
2pO
4in the form of mixture of one or more compounds use.In this case, KNO
3with the mixed weight ratio of other components, can fall in the scope of 1: 3～3: 1.
In etchant of the present invention, water is deionized water preferably, and useful especially is the deionized water that is applicable to semiconductor machining that is at least 18M Ω/cm.
Except said components, the etchant in the present invention can further comprise that sulfuric acid or Sulfates compound are as the etching control agent, usings and controls the tip as the IZO of In base transparency conducting layer.Sulfuric acid or Sulfates compound refer to the compound of dissociable one-tenth sulfate ion, and the group of specifically selecting free sulfuric acid, ammonium sulfate, vitriolate of tartar, calcium sulfate, sodium sulfate, sulfonic acid such as tosic acid (PTSA), methylsulfonic acid to form, these materials can be used alone or being used in combination with two or more.Gross weight based on composition, the amount that sulfuric acid or Sulfates compound can 0.1～5wt% comprises.
Except said components, etching solution of the present invention can further comprise and is selected from one or more in tensio-active agent, metal sequestering agent (sequestering agent), resist and pH adjusting agent.
In addition, the invention provides a kind of method of thin film transistor that manufacture comprises the gate line that has four layers and has the data line of four layers, four layers of gate line comprise: ITO class transparency conducting layer, be deposited on and comprise Mo Base Metal upper strata and Mo Base Metal lower floor and the Al Base Metal layer between Mo Base Metal upper strata and Mo Base Metal lower floor three layers on ITO class transparency conducting layer, four layers of data line comprise: as the IZO class transparency conducting layer on upper strata, be formed on and comprise Mo Base Metal upper strata and Mo Base Metal lower floor and the Al Base Metal layer between Mo Base Metal upper strata and Mo Base Metal lower floor three layers under IZO class transparency conducting layer, described method comprises utilizes etching solution etch-gate polar curve and data line, the gross weight of described etching solution based on composition comprises: the phosphoric acid of 60～70wt%, the nitric acid of 2～8wt%, the acetic acid of 5～15wt%, 0.1～7wt% is selected from K
3pO
4, K
2hPO
4, KH
2pO
4, CH
3cO
2k and KNO
3in at least one K compounds and add so that the gross weight of described composition reaches the excess water of 100wt%.
In manufacturing the thin film transistor process, if utilize etchant etch-gate polar curve of the present invention and data line, the ITO thin layer of gate line is unaffected and Mo Base Metal layer and Al Base Metal layer that only be formed on the ITO thin layer are etched, otherwise the IZO layer of data line, Mo Base Metal layer and Al Base Metal layer can be simultaneously etched.Etchant of the present invention is favourable at the etching selectivity improved ITO and IZO aspect realization etching simultaneously.
The embodiment below listed is not interpreted as restriction the present invention in order to example, these embodiment can provide the present invention is better understood.
<embodiment 1 and 2 and comparative example 1～4: the preparation of etchant >
Use the amount of component shown in following table 1 to prepare the 180kg etchant.
[table 1]
| Phosphoric acid | Nitric acid | Acetic acid | KH 2PO 4 | KNO 3 | PTSA | Water | |
| Embodiment 1 | 66 | 5 | 10 | 3 | 1 | 0 | Surplus |
| Embodiment 2 | 66 | 5 | 8 | 3 | 1 | 2 | Surplus |
| Comparative example 1 | 57 | 7 | 15 | 3 | 1 | 0 | Surplus |
| Comparative example 2 | 66 | 11 | 5 | 3 | 1 | 0 | Surplus |
| Comparative example 3 | 66 | 5 | 0 | 3 | 1 | 0 | Surplus |
| Comparative example 4 | 72 | 5 | 5 | 3 | 1 | 0 | Surplus |
PTSA: tosic acid (being the Sulfates compound)
<test case: the assessment of etching performance >
Use is included in the a-ITO/Mo/Al/Mo (gate line) upwards deposited successively on glass and the test board of Mo/Al/Mo/IZO (data line), and wherein photoresist material forms pattern with predetermined shape.
By embodiment 1 and 2 and comparative example 1～4 in every kind of etching solution put in spraying type etching machine (ETCHER (TFT), purchased from SEMES), then in temperature, be made as under the condition of 40 ℃ warm.Next, carry out etching process at 40 ± 0.1 ℃ of temperature.Like this, in the situation that grid substrate, etching process carries out total etching period is compared the condition of increase by 50% with EPD under.In the situation that data substrate, this process is carried out total etching period is compared the condition of increase by 100% with EPD under.Next, each specimen put into to the spraying type etching machine and sprayed with etching solution.After etching completes, specimen is taken out from etching machine, use washed with de-ionized water, then utilize the hot air dryer drying, utilize afterwards light carving rubber stripper to remove from it photoresist material.Clean and drying after, utilize the length at IZO tip of cone angle, lateral erosion (CD (critical size)) loss, etch residue and data line of the etching outline of SEM (S-4700, purchased from HITACHI) measurement specimen.The results are shown in following table 2.
[evaluation criteria of etching outline]
<a-ITO/Mo/Al/Mo thin layer >
◎: very excellent (CD is offset (Skew):<1.0 μ m, T/A:40 °～60 °)
Zero: excellent (CD skew: >=1.0 μ m, T/A:<40 °)
△: good (CD skew: >=1.0 μ m, T/A:>60 °)
X: poor (metal level loses and produce residue)
<Mo/Al/Mo/IZO thin layer >
◎: very excellent (CD skew:<2.0 μ m, T/A:50 °～70 °, IZO tip:<0.2 μ m)
Zero: excellent (the CD skew: >=2.0 μ m, T/A:<50 °, IZO tip: 0.2～0.3 μ m)
△: good (the CD skew: >=2.0 μ m, T/A:>70 °, IZO tip: 0.3～0.5 μ m)
X: poor (metal level loses and produce residue)
[table 2]
From table 2, obviously find out, embodiments of the invention 1 and 2 etchant show excellent etching outline and do not produce residue and the IZO tip is little, show thus the ability of excellent etching a-ITO/Mo/Al/Mo and Mo/Al/Mo/IZO thin layer.Yet the etching solution of the comparative example 1 that comprises 57wt% phosphoric acid produces and damages the a-ITO lower floor in a-ITO/Mo/Al/Mo, causes etching outline inferior and produce residue on Mo and Al thin layer.In the comparative example 2 that comprises excessive nitric acid, owing to crossing etching, the loss of Mo/Al/Mo/IZO layer.The etching solution that does not comprise the comparative example 3 of acetic acid produces etching outline inferior and not etching Mo and Al thin layer.The etching solution of the comparative example 4 that comprises excess phosphoric acid produces good etching outline, but it is most advanced and sophisticated large to 0.5 μ m or larger degree to observe IZO.
As described above, etchant of the present invention every layer in etching IZO transparency conducting layer, Al Base Metal layer and Mo Base Metal layer very well.Particularly, this etchant is the In base transparency conducting layer of etch-gate polar curve not, and the IZO thin layer as In base transparency conducting layer of energy etching data line, thereby most advanced and sophisticated generation reduces, etching simultaneously comprises the multilayer of IZO transparency conducting layer, Al Base Metal layer and Mo Base Metal layer effectively thus.Thus, the use of etchant of the present invention quite can be simplified etching process, boosts productivity widely thus.
Although, for the purpose of example discloses the preferred embodiment of the present invention, it will be understood by those skilled in the art that and can carry out various modifications, interpolation and substitute and do not deviate from as disclosed scope and spirit of the present invention in claims.
Claims (6)
1. an etchant, the multilayer that comprises IZO (indium zinc oxide) transparency conducting layer, aluminium based metal layer and molybdenum Base Metal layer for etching, gross weight based on composition, described etchant comprises: the acetic acid of the phosphoric acid of 60～70wt%, the nitric acid of 2～8wt%, 5～15wt%, 0.1～7wt% are selected from K
3pO
4, K
2hPO
4, KH
2pO
4, CH
3cO
2k and KNO
3in at least one potassium compounds and add so that the gross weight of described composition reaches the excess water of 100wt%.
2. etchant according to claim 1, wherein, described potassium compounds is provided as comprising the mixture of two or more components.
3. etchant according to claim 1, wherein, described potassium compounds is to comprise KNO
3be selected from K
3pO
4, K
2hPO
4, CH
3cO
2k and KH
2pO
4in the mixture of one or more compounds.
4. etchant according to claim 1, further comprise sulfuric acid or Sulfates compound.
5. a manufacture comprises the gate line that has four layers and has the method for thin film transistor of the data line of four layers, four layers of wherein said gate line comprise tin indium oxide class transparency conducting layer and are deposited on and comprise molybdenum Base Metal upper strata and molybdenum Base Metal lower floor and the aluminium based metal layer between molybdenum Base Metal upper strata and molybdenum Base Metal lower floor three layers on described tin indium oxide class transparency conducting layer, four layers of described data line comprise at the indium zinc oxide class transparency conducting layer on upper strata and are formed on and comprise molybdenum Base Metal upper strata and molybdenum Base Metal lower floor and the aluminium based metal layer between described molybdenum Base Metal upper strata and molybdenum Base Metal lower floor three layers below described indium zinc oxide class conductive layer, described method comprises utilizes the described gate line of etching solution etching and described data line, gross weight based on composition, described etching solution comprises: the phosphoric acid of 60～70wt%, the nitric acid of 2～8wt%, the acetic acid of 5～15wt%, 0.1～7wt% is selected from K
3pO
4, K
2hPO
4, KH
2pO
4, CH
3cO
2k and KNO
3in at least one potassium compounds and add so that the gross weight of described composition reaches the excess water of 100wt%.
6. a method of manufacturing thin film transistor comprises the following steps:
A) utilize the etching solution etching to have the metal-layer structure of four layers, described four layers comprise tin indium oxide class transparency conducting layer and are deposited on and comprise molybdenum Base Metal upper strata and molybdenum Base Metal lower floor and the aluminium based metal layer between described molybdenum Base Metal upper strata and molybdenum Base Metal lower floor three layers on described tin indium oxide class transparency conducting layer, gross weight based on composition, described etching solution comprises: the acetic acid of the phosphoric acid of 60～70wt%, the nitric acid of 2～8wt%, 5～15wt%, 0.1～7wt% are selected from K
3pO
4, K
2hPO
4, KH
2pO
4, CH
3cO
2k and KNO
3in at least one potassium compounds and add so that the gross weight of described composition reaches the excess water of 100wt%, make the described tin indium oxide class transparency conducting layer that is positioned at the lower floor position not etched, and be formed on the described three layers of quilt etching simultaneously on described tin indium oxide class transparency conducting layer, thereby form gate line; And
B) utilize the etching simultaneously of described etching solution to have the metal-layer structure of four layers, described four layers comprise: comprise molybdenum Base Metal upper strata and molybdenum Base Metal lower floor and the aluminium based metal layer between described molybdenum Base Metal upper strata and molybdenum Base Metal lower floor three layers and be formed on the indium zinc oxide class transparency conducting layer on described three layers, thereby forming data line.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110135864A KR101766488B1 (en) | 2011-12-15 | 2011-12-15 | Etching solution composition for formation of metal line |
| KR10-2011-0135864 | 2011-12-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103160831A true CN103160831A (en) | 2013-06-19 |
| CN103160831B CN103160831B (en) | 2016-01-06 |
Family
ID=48584356
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210435347.XA Active CN103160831B (en) | 2011-12-15 | 2012-11-02 | For the formation of the etchant of metal wire and the method for manufacture thin film transistor |
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|---|---|
| KR (1) | KR101766488B1 (en) |
| CN (1) | CN103160831B (en) |
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| KR102150507B1 (en) * | 2014-03-19 | 2020-09-01 | 동우 화인켐 주식회사 | Multi-layer etching solution composition for formation of metal line |
| KR102323849B1 (en) | 2015-03-05 | 2021-11-09 | 동우 화인켐 주식회사 | Etching solution composition for multilayers and manufacturing method of an array substrate for Liquid crystal display using the same |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104419932A (en) * | 2013-08-27 | 2015-03-18 | 东友精细化工有限公司 | Etching agent composition used for forming silver or silver alloy wire and reflection layer |
| JP2016167581A (en) * | 2015-03-09 | 2016-09-15 | 東友ファインケム株式会社Dongwoo Fine−Chem Co., Ltd. | Liquid composition for etching silver-containing film and manufacturing method of array substrate for display device using same |
| CN105951101A (en) * | 2015-03-09 | 2016-09-21 | 东友精细化工有限公司 | Etching solution composition for silver-containing film and manufacturing method of an array substrate for display device using the same |
| CN105970227A (en) * | 2015-03-12 | 2016-09-28 | 东友精细化工有限公司 | Etchant composition and method for forming metal pattern by same |
| CN108701695A (en) * | 2017-05-17 | 2018-10-23 | 深圳市柔宇科技有限公司 | Array substrate and its manufacturing method |
| CN109594079A (en) * | 2017-09-30 | 2019-04-09 | 深圳新宙邦科技股份有限公司 | A kind of molybdenum aluminium shares etching solution and engraving method |
| CN109594079B (en) * | 2017-09-30 | 2021-02-12 | 深圳新宙邦科技股份有限公司 | Molybdenum-aluminum common etching solution and etching method |
| CN110117792A (en) * | 2018-02-06 | 2019-08-13 | 东友精细化工有限公司 | The method of metal layer etching agent composite and manufacture conductive pattern |
| CN110129797A (en) * | 2019-04-08 | 2019-08-16 | 江苏中德电子材料科技有限公司 | A kind of compatibility etching solution of molybdenum aluminium molybdenum |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130068579A (en) | 2013-06-26 |
| KR101766488B1 (en) | 2017-08-09 |
| CN103160831B (en) | 2016-01-06 |
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