CN103151709A - Gallium-arsenide-based laser diode with co-doped thin film - Google Patents
Gallium-arsenide-based laser diode with co-doped thin film Download PDFInfo
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- CN103151709A CN103151709A CN2013100672625A CN201310067262A CN103151709A CN 103151709 A CN103151709 A CN 103151709A CN 2013100672625 A CN2013100672625 A CN 2013100672625A CN 201310067262 A CN201310067262 A CN 201310067262A CN 103151709 A CN103151709 A CN 103151709A
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- oxide film
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- thin film
- nitrogen magnesium
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Abstract
The invention discloses a laser diode employing a nitrogen-magnesium co-doped p-type zinc oxide thin film. The laser diode structurally comprises an n-type nickel oxide thin film formed on the upper surface of a gallium arsenide substrate, the nitrogen-magnesium co-doped p-type zinc oxide thin film formed on the upper surface of the n-type nickel oxide thin film, a bottom electrode formed on the lower surface of the n-type nickel oxide thin film, and a top electrode formed on the upper surface of the nitrogen-magnesium co-doped p-type zinc oxide thin film.
Description
Technical field
The invention belongs to semiconductor applications, relate in particular to a kind of GaAs based laser diode with codope film.
Background technology
Zinc oxide (ZnO) is in lattice structure, cell parameter or all similar to GaN on energy gap, and have than the higher fusing point of GaN and larger exciton bind energy, have again the threshold value of lower luminescence generated by light and stimulated radiation and good electromechanical coupling characteristics, thermal stability and chemical stability.Thereby in the application aspect royal purple light-emitting diode, laser and relative photo electric device thereof, huge potentiality are arranged.At room temperature, the energy gap of zinc oxide (ZnO) is 3.37eV, and free exciton is in conjunction with can be up to 60meV, much larger than exciton binding energy 25meV and the hot ionization energy 26meV of room temperature of GaN, therefore easilier realizes the exciton gain under room temperature or higher temperature.But the key that ZnO moves towards the photoelectric device application is to realize the p-type ZnO film of reliable and stable and low-resistance.ZnO is owing to existing many intrinsic alms giver's defectives (as Zn
i, V
oDeng) and the impurity such as H of involuntary doping, be usually expressed as N-shaped.The existence of these alms giver's defectives can produce strong self compensation effect to the acceptor impurity that mixes, so be difficult to realize the P type doping of ZnO.ZnO homojunction ultraviolet swashs penetrates diode and need to do the multi-layer quantum well structure, and p-ZnO mobility used is lower, less stable.The ultraviolet laser diode that development structure is simple, with low cost, the gain of light is high has important using value.
At present, have in the industry the report that obtains the p-type zinc-oxide film by the mode of codope.For example, mix magnesium and antimony and form Mg-Sb codoped p type ZnO film in zinc oxide, wherein magnesium (Mg) can increase the energy gap of ZnO effectively as the dopant of ZnO, so the intrinsic shallow donor's energy level in ZnO just can be away from the conduction band limit, thereby increased its ionization energy, weakened the N-shaped conductive characteristic of ZnO.But due to the auto-compensation of the intrinsic shallow donor's defective that exists in ZnO, make Sb be difficult to be used to doping preparation p-type ZnO material.
Description of drawings
Fig. 1 is the structural representation of the laser diode that proposes of the present invention;
Summary of the invention:
The present invention is directed to the problem that prior art exists, proposed a kind of laser diode with nitrogen magnesium codoped p type zinc-oxide film, the structure of this laser diode is:
The N-shaped nickel oxide film, it is formed on the upper surface of gallium arsenide substrate; Nitrogen magnesium codoped p type zinc-oxide film, it is formed on the upper surface of described N-shaped nickel oxide film, and hearth electrode, and it is formed on described N-shaped nickel oxide film lower surface, top electrode, it is formed on the upper surface of described nitrogen magnesium codoped p type zinc-oxide film.
Wherein, the thickness of described nitrogen magnesium codoped p type zinc-oxide film is 300-400nm, and in this nitrogen magnesium codoped p type zinc-oxide film, the molar content of Mg is 5-11%, and the molar content of arsenic is 0.8-1.7%; The thickness of described N-shaped nickel oxide film is 300-600nm.
Wherein, at normal temperatures, the piezoelectric constant d of the p-type ZnO crystal film of nitrogen magnesium codope
33Greater than 16pC/N, its resistivity is greater than 2 * 10
10Ω cm.
Embodiment:
The present invention is described in detail below by embodiment.
Embodiment 1
As shown in Figure 1, the structure of the laser diode of employing nitrogen magnesium codoped p type zinc-oxide film of the present invention is:
Have N-shaped nickel oxide film 3 on the upper surface of gallium arsenide substrate 2, the thickness of this N-shaped nickel oxide film 3 is 300-600nm; Nitrogen magnesium codoped p type zinc-oxide film 4, it is formed on the upper surface of described N-shaped nickel oxide film 3, wherein, the thickness of described nitrogen magnesium codoped p type zinc-oxide film 4 is 300-400nm, in this nitrogen magnesium codoped p type zinc-oxide film 4, the molar content of Mg is 5-11%, and the molar content of arsenic is 0.8-1.7%; And, at normal temperatures, the piezoelectric constant d of the p-type ZnO crystal film 4 of nitrogen magnesium codope
33Greater than 16pC/N, its resistivity is greater than 2 * 10
10Ω cm.
Hearth electrode 1 is formed on the lower surface of gallium arsenide substrate 2, and top electrode 5 is formed on the upper surface of nitrogen magnesium codoped p type zinc-oxide film 4.Can adopt the various metals material to consist of the material of hearth electrode 1 and top electrode 5, for example gold, silver or copper.Also can adopt the metallic compound material to consist of described hearth electrode 1 and top electrode 5, for example ITO.
Embodiment 2
As shown in Figure 1, the structure of the laser diode of employing nitrogen magnesium codoped p type zinc-oxide film of the present invention is:
Have N-shaped nickel oxide film 3 on the upper surface of gallium arsenide substrate 2, the thickness of this N-shaped nickel oxide film 3 is 400nm; Nitrogen magnesium codoped p type zinc-oxide film 4, it is formed on the upper surface of described N-shaped nickel oxide film 3, wherein, the thickness of described nitrogen magnesium codoped p type zinc-oxide film 4 is 360nm, in this nitrogen magnesium codoped p type zinc-oxide film 4, the molar content of Mg is 9%, and the molar content of arsenic is 1.2%; And, at normal temperatures, the piezoelectric constant d of the p-type ZnO crystal film 4 of nitrogen magnesium codope
33Greater than 16pC/N, its resistivity is greater than 2 * 10
10Ω cm.
Hearth electrode 1 is formed on the lower surface of gallium arsenide substrate 2, and top electrode 5 is formed on the upper surface of nitrogen magnesium codoped p type zinc-oxide film 4.Can adopt the various metals material to consist of the material of hearth electrode 1 and top electrode 5, for example gold, silver or copper.Also can adopt the metallic compound material to consist of described hearth electrode 1 and top electrode 5, for example ITO.
Above execution mode is described in detail the present invention, but above-mentioned execution mode is not in order to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.
Claims (4)
1. laser diode that adopts nitrogen magnesium codoped p type zinc-oxide film, the structure of this laser diode is:
The N-shaped nickel oxide film, it is formed on the upper surface of gallium arsenide substrate; Nitrogen magnesium codoped p type zinc-oxide film, it is formed on the upper surface of described N-shaped nickel oxide film, and hearth electrode, and it is formed on described N-shaped nickel oxide film lower surface, top electrode, it is formed on the upper surface of described nitrogen magnesium codoped p type zinc-oxide film.
2. laser diode as claimed in claim 1 is characterized in that:
Wherein, the thickness of described nitrogen magnesium codoped p type zinc-oxide film is about 300-400nm, and in this nitrogen magnesium codoped p type zinc-oxide film, the molar content of Mg is 5-11%, and the molar content of arsenic is 0.8-1.7%; The thickness of described N-shaped nickel oxide film is about 300-600nm.
3. laser diode as claimed in claim 1 or 2 is characterized in that:
Wherein, at normal temperatures, the piezoelectric constant d of the p-type ZnO crystal film of nitrogen magnesium codope
33Greater than 16pC/N, its resistivity is greater than 2 * 10
10Ω cm.
4. one of as any in claim 1-3 described laser diode is characterized in that:
Can adopt the various metals material to consist of the material of hearth electrode and top electrode, for example gold, silver or copper, also can adopt the metallic compound material to consist of described hearth electrode and top electrode, for example ITO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310067262.5A CN103151709B (en) | 2013-03-01 | 2013-03-01 | Gallium-arsenide-based laser diode with co-doped thin film |
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|---|---|---|---|
| CN201310067262.5A CN103151709B (en) | 2013-03-01 | 2013-03-01 | Gallium-arsenide-based laser diode with co-doped thin film |
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| CN103151709A true CN103151709A (en) | 2013-06-12 |
| CN103151709B CN103151709B (en) | 2015-02-25 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060219928A1 (en) * | 2002-09-16 | 2006-10-05 | The Regents Of The University Of California | Codoped Direct-Gap Semiconductor Scintillators |
| CN101368288A (en) * | 2008-10-07 | 2009-02-18 | 中国科学院物理研究所 | P type ZnO thin film production method |
| KR20090095877A (en) * | 2008-03-06 | 2009-09-10 | 부산대학교 산학협력단 | p-type ZnO semiconductor codoped by Na and F codoping |
| CN101604719A (en) * | 2009-07-13 | 2009-12-16 | 浙江大学 | Zno-based light-emitting diode that a kind of Mg-Na mixes altogether and preparation method thereof |
| CN101621104A (en) * | 2009-08-06 | 2010-01-06 | 杭州兰源光电材料有限公司 | ZnO-based multiple quantum well light-emitting diode with vertical structure and preparation method thereof |
| CN102549780A (en) * | 2009-08-26 | 2012-07-04 | 印度马德拉斯理工学院 | Stable p-type semiconducting behavior in Li and Ni codoped ZnO |
-
2013
- 2013-03-01 CN CN201310067262.5A patent/CN103151709B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060219928A1 (en) * | 2002-09-16 | 2006-10-05 | The Regents Of The University Of California | Codoped Direct-Gap Semiconductor Scintillators |
| KR20090095877A (en) * | 2008-03-06 | 2009-09-10 | 부산대학교 산학협력단 | p-type ZnO semiconductor codoped by Na and F codoping |
| CN101368288A (en) * | 2008-10-07 | 2009-02-18 | 中国科学院物理研究所 | P type ZnO thin film production method |
| CN101604719A (en) * | 2009-07-13 | 2009-12-16 | 浙江大学 | Zno-based light-emitting diode that a kind of Mg-Na mixes altogether and preparation method thereof |
| CN101621104A (en) * | 2009-08-06 | 2010-01-06 | 杭州兰源光电材料有限公司 | ZnO-based multiple quantum well light-emitting diode with vertical structure and preparation method thereof |
| CN102549780A (en) * | 2009-08-26 | 2012-07-04 | 印度马德拉斯理工学院 | Stable p-type semiconducting behavior in Li and Ni codoped ZnO |
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| CN103151709B (en) | 2015-02-25 |
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Granted publication date: 20150225 Termination date: 20160301 |