CN103166113B - Gallium nitride base laser diode with co-doped thin film - Google Patents
Gallium nitride base laser diode with co-doped thin film Download PDFInfo
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- CN103166113B CN103166113B CN201310066818.9A CN201310066818A CN103166113B CN 103166113 B CN103166113 B CN 103166113B CN 201310066818 A CN201310066818 A CN 201310066818A CN 103166113 B CN103166113 B CN 103166113B
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Abstract
The invention discloses a laser diode with a nitrogen magnesium co-doped p-type zinc oxide thin film adopted, and the structure of the laser diode includes an n-type nickel oxide thin film, the nitrogen magnesium co-doped p-type zinc oxide thin film, a bottom electrode and a top electrode, wherein the n-type nickel oxide thin film is formed on the upper surface of a gallium nitride substrate, the nitrogen magnesium co-doped p-type zinc oxide thin film is formed on the upper surface of the n-type nickel oxide thin film, the bottom electrode is formed on the lower surface of the n-type nickel oxide thin film, and the top electrode is formed on the upper surface of the nitrogen magnesium co-doped p-type zinc oxide thin film.
Description
Technical field
The invention belongs to semiconductor applications, relate in particular to a kind of gallium nitrate based laser diode with codope film.
Background technology
Zinc oxide (ZnO) is in lattice structure, cell parameter or all similar to GaN in energy gap, and there is the fusing point higher than GaN and larger exciton bind energy, there is again threshold value and good electromechanical coupling characteristics, thermal stability and the chemical stability of lower luminescence generated by light and stimulated radiation.Thus the application in royal purple light-emitting diode, laser and relative photo electric device thereof has huge potentiality.At room temperature, the energy gap of zinc oxide (ZnO) is 3.37eV, and free exciton combines can up to 60meV, much larger than exciton binding energy 25meV and the hot ionization energy 26meV of room temperature of GaN, therefore easilier under room temperature or higher temperature, realizes exciton gain.But the key that ZnO moves towards photoelectric device application realizes the reliable and stable and p-type ZnO film of low-resistance.Owing to there is many intrinsic Shi zhiming (as Zn in ZnO
i, V
odeng) and the impurity such as H of involuntary doping, be usually expressed as N-shaped.The existence of these Shi zhiming can produce strong self-compensation mechanism to the acceptor impurity mixed, so be difficult to the P type doping realizing ZnO.ZnO homojunction ultraviolet swashs penetrates diode and needs to do multi-layer quantum well structure, and p-ZnO mobility used is lower, less stable.The ultraviolet laser diode that development structure is simple, with low cost, the gain of light is high has important using value.
At present, the report being obtained p-type zinc-oxide film by the mode of codope is had in the industry.Such as, magnesium and antimony is mixed to form Mg-Sb codoped p type ZnO film in zinc oxide, wherein magnesium (Mg) can increase the energy gap of ZnO effectively as the dopant of ZnO, so the intrinsic shallow donor energy level in ZnO just can away from conduction band limit, thus increase its ionization energy, reduce the N-shaped conductive characteristic of ZnO.But due to the auto-compensation of intrinsic shallow donor defect existed in ZnO, make Sb be difficult to be used to doping preparation p-type ZnO material.
Accompanying drawing explanation
Fig. 1 is the structural representation of the laser diode that the present invention proposes;
Summary of the invention:
The present invention is directed to prior art Problems existing, propose a kind of laser diode with nitrogen magnesium codoped p type zinc-oxide film, the structure of this laser diode is:
N-shaped nickel oxide film, it is formed on the upper surface of gallium nitride substrate; Nitrogen magnesium codoped p type zinc-oxide film, it is formed on the upper surface of described N-shaped nickel oxide film, and hearth electrode, and it is formed on described N-shaped nickel oxide film lower surface, top electrode, and it is formed on the upper surface of described nitrogen magnesium codoped p type zinc-oxide film.
Wherein, the thickness of described nitrogen magnesium codoped p type zinc-oxide film is 300-400nm, and in this nitrogen magnesium codoped p type zinc-oxide film, the molar content of Mg is 5-11%, and the molar content of arsenic is 0.8-1.7%; The thickness of described N-shaped nickel oxide film is 300-600nm.
Wherein, at normal temperatures, the piezoelectric constant d of the p-type ZnO crystal film of nitrogen magnesium codope
33be greater than 16pC/N, its resistivity is greater than 2 × 10
10Ω cm.
Embodiment:
Below by embodiment, the present invention is described in detail.
Embodiment 1
As shown in Figure 1, the structure of the laser diode of employing nitrogen magnesium codoped p type zinc-oxide film of the present invention is:
The upper surface of gallium nitride substrate 2 has N-shaped nickel oxide film 3, and the thickness of this N-shaped nickel oxide film 3 is 300-600nm; Nitrogen magnesium codoped p type zinc-oxide film 4, it is formed on the upper surface of described N-shaped nickel oxide film 3, wherein, the thickness of described nitrogen magnesium codoped p type zinc-oxide film 4 is 300-400nm, in this nitrogen magnesium codoped p type zinc-oxide film 4, the molar content of Mg is 5-11%, and the molar content of arsenic is 0.8-1.7%; Further, at normal temperatures, the piezoelectric constant d of the p-type ZnO crystal film 4 of nitrogen magnesium codope
33be greater than 16pC/N, its resistivity is greater than 2 × 10
10Ω cm.
Hearth electrode 1 is formed on the lower surface of gallium nitride substrate 2, and top electrode 5 is formed on the upper surface of nitrogen magnesium codoped p type zinc-oxide film 4.Various metals material can be adopted to form the material of hearth electrode 1 and top electrode 5, such as gold, silver or copper.Also can adopt metal compound material such as, to form described hearth electrode 1 and top electrode 5, ITO.
Embodiment 2
As shown in Figure 1, the structure of the laser diode of employing nitrogen magnesium codoped p type zinc-oxide film of the present invention is:
The upper surface of gallium nitride substrate 2 has N-shaped nickel oxide film 3, and the thickness of this N-shaped nickel oxide film 3 is 400nm; Nitrogen magnesium codoped p type zinc-oxide film 4, it is formed on the upper surface of described N-shaped nickel oxide film 3, wherein, the thickness of described nitrogen magnesium codoped p type zinc-oxide film 4 is 360nm, in this nitrogen magnesium codoped p type zinc-oxide film 4, the molar content of Mg is 9%, and the molar content of arsenic is 1.2%; Further, at normal temperatures, the piezoelectric constant d of the p-type ZnO crystal film 4 of nitrogen magnesium codope
33be greater than 16pC/N, its resistivity is greater than 2 × 10
10Ω cm.
Hearth electrode 1 is formed on the lower surface of gallium nitride substrate 2, and top electrode 5 is formed on the upper surface of nitrogen magnesium codoped p type zinc-oxide film 4.Various metals material can be adopted to form the material of hearth electrode 1 and top electrode 5, such as gold, silver or copper.Also can adopt metal compound material such as, to form described hearth electrode 1 and top electrode 5, ITO.
Above execution mode is to invention has been detailed introduction, but above-mentioned execution mode is not intended to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.
Claims (1)
1. adopt a laser diode for nitrogen magnesium codoped p type zinc-oxide film, the structure of this laser diode is:
N-shaped nickel oxide film, it is formed on the upper surface of gallium nitride substrate; Nitrogen magnesium codoped p type zinc-oxide film, it is formed on the upper surface of described N-shaped nickel oxide film, and hearth electrode, and it is formed on described N-shaped nickel oxide film lower surface, top electrode, and it is formed on the upper surface of described nitrogen magnesium codoped p type zinc-oxide film;
Wherein, the thickness of described nitrogen magnesium codoped p type zinc-oxide film is 300-400nm, and in this nitrogen magnesium codoped p type zinc-oxide film, the molar content of Mg is 5-11%, and the molar content of nitrogen is 0.8-1.7%; The thickness of described N-shaped nickel oxide film is 300-600nm;
Wherein, at normal temperatures, the piezoelectric constant d of the p-type ZnO crystal film of nitrogen magnesium codope
33be greater than 16pC/N, its resistivity is greater than 2 × 10
10Ω cm;
Gold, silver, copper or ITO is adopted to form hearth electrode and top electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310066818.9A CN103166113B (en) | 2013-03-01 | 2013-03-01 | Gallium nitride base laser diode with co-doped thin film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310066818.9A CN103166113B (en) | 2013-03-01 | 2013-03-01 | Gallium nitride base laser diode with co-doped thin film |
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| CN103166113A CN103166113A (en) | 2013-06-19 |
| CN103166113B true CN103166113B (en) | 2015-06-10 |
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| CN110364592B (en) * | 2018-04-10 | 2021-09-17 | Tcl科技集团股份有限公司 | Zinc oxide homojunction and preparation method thereof |
| CN110649166A (en) * | 2018-06-26 | 2020-01-03 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8546797B2 (en) * | 2009-10-20 | 2013-10-01 | Stanley Electric Co., Ltd. | Zinc oxide based compound semiconductor device |
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Non-Patent Citations (5)
| Title |
|---|
| Fabrication of p-Type Nitrogen-Doped MgZnO by Depressing N-Related Donors;WEI Z.P. et al.;《Journal of the Korean Physical Society》;20081130;第53卷(第5期);第3043-3044页I.INTRODUCTION、第3044-3045页III.RESULTS AND DISCISSIONS * |
| p-ZnMgO:As薄膜的MOCVD生长及其发光器件制备研究;赵龙;《中国优秀硕士学位论文全文数据库 信息科技辑》;20121115(第11期);4.4 p-ZnMgO/n-GaN异质结发光器件的制备及其特性研究 * |
| Qiu MX, et al..p-type behavior of nitrogen doped, lithium doped, and nitrogen-lithium codoped Zn0.11Mg0.89O thin films.《Journal of Vacuum Science & * |
| Realization of p-type ZnO by (nN,Mg) codoping from first-principles;Lanli Chen et al.;《Optical Materials》;20101231;第32卷;第1216页摘要、1.Introduction * |
| Technology》.2009,第27卷(第4期), * |
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