CN103178444B - Laser diode - Google Patents
Laser diode Download PDFInfo
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- CN103178444B CN103178444B CN201310064214.0A CN201310064214A CN103178444B CN 103178444 B CN103178444 B CN 103178444B CN 201310064214 A CN201310064214 A CN 201310064214A CN 103178444 B CN103178444 B CN 103178444B
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- oxide film
- magnesium
- type zinc
- arsenic
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Abstract
The invention discloses a laser diode formed by p-type zinc oxide film co-doped with magnesium and arsenic. The laser diode is structurally characterized in that an n-type nickel oxide film is formed on the upper surface of a sapphire substrate, a p-type zinc oxide film co-doped with magnesium and arsenic is formed on the upper surface of the n-type nickel oxide film, a bottom electrode is formed on the lower surface of the n-type nickel oxide film, and a top electrode is formed on the upper surface of the p-type zinc oxide film co-doped with magnesium and arsenic.
Description
Technical field
The invention belongs to semiconductor applications, relate in particular to a kind of laser diode.
Background technology
Zinc oxide (ZnO) is in lattice structure, cell parameter or all similar to GaN in energy gap, and there is the fusing point higher than GaN and larger exciton bind energy, there is again threshold value and good electromechanical coupling characteristics, thermal stability and the chemical stability of lower luminescence generated by light and stimulated radiation.Thus the application in royal purple light-emitting diode, laser and relative photo electric device thereof has huge potentiality.At room temperature, the energy gap of zinc oxide (ZnO) is 3.37eV, and free exciton combines can up to 60meV, much larger than exciton binding energy 25meV and the hot ionization energy 26meV of room temperature of GaN, therefore easilier under room temperature or higher temperature, realizes exciton gain.But the key that ZnO moves towards photoelectric device application realizes the reliable and stable and p-type ZnO film of low-resistance.Owing to there is many intrinsic Shi zhiming (as Zn in ZnO
i, V
odeng) and the impurity such as H of involuntary doping, be usually expressed as N-shaped.The existence of these Shi zhiming can produce strong self-compensation mechanism to the acceptor impurity mixed, so be difficult to the P type doping realizing ZnO.ZnO homojunction ultraviolet swashs penetrates diode and needs to do multi-layer quantum well structure, and p-ZnO mobility used is lower, less stable.The ultraviolet laser diode that development structure is simple, with low cost, the gain of light is high has important using value.
At present, the report being obtained p-type zinc-oxide film by the mode of codope is had in the industry.Such as, magnesium and antimony is mixed to form Mg-Sb codoped p type ZnO film in zinc oxide, wherein magnesium (Mg) can increase the energy gap of ZnO effectively as the dopant of ZnO, so the intrinsic shallow donor energy level in ZnO just can away from conduction band limit, thus increase its ionization energy, reduce the N-shaped conductive characteristic of ZnO.But due to the auto-compensation of intrinsic shallow donor defect existed in ZnO, make Sb be difficult to be used to doping preparation p-type ZnO material.
Accompanying drawing explanation
Fig. 1 is the structural representation of the laser diode that the present invention proposes;
Summary of the invention:
The present invention is directed to prior art Problems existing, propose a kind of laser diode adopting magnesium arsenic codoped p type zinc-oxide film, the structure of this laser diode is:
N-shaped nickel oxide film, it is formed on the upper surface of Sapphire Substrate; Magnesium arsenic codoped p type zinc-oxide film, it is formed on the upper surface of described N-shaped nickel oxide film, and hearth electrode, and it is formed on described N-shaped nickel oxide film lower surface, top electrode, and it is formed on the upper surface of described magnesium arsenic codoped p type zinc-oxide film.
Wherein, the thickness of described magnesium arsenic codoped p type zinc-oxide film is 200-400nm, and in this magnesium arsenic codoped p type zinc-oxide film, the molar content of Mg is 8-13%, and the molar content of arsenic is 0.5-1.5%; The thickness of described N-shaped nickel oxide film is 300-600nm.
Wherein, at normal temperatures, the piezoelectric constant d of the p-type ZnO crystal film of magnesium arsenic codope
33be greater than 18pC/N, its resistivity is greater than 10
10Ω cm.
Embodiment:
Below by embodiment, the present invention is described in detail.
Embodiment 1
As shown in Figure 1, the structure of the laser diode of employing magnesium arsenic codoped p type zinc-oxide film of the present invention is:
The upper surface of Sapphire Substrate 2 has N-shaped nickel oxide film 3, and the thickness of this N-shaped nickel oxide film 3 is 300-600nm; Magnesium arsenic codoped p type zinc-oxide film 4, it is formed on the upper surface of described N-shaped nickel oxide film 3, wherein, the thickness of described magnesium arsenic codoped p type zinc-oxide film 4 is 200-400nm, in this magnesium arsenic codoped p type zinc-oxide film 4, the molar content of Mg is 8-13%, and the molar content of arsenic is 0.5-1.5%; Further, at normal temperatures, the piezoelectric constant d of the p-type ZnO crystal film 4 of magnesium arsenic codope
33be greater than 18pC/N, its resistivity is greater than 10
10Ω cm.
Hearth electrode 1 is formed on the lower surface of Sapphire Substrate 2, and top electrode 5 is formed on the upper surface of magnesium arsenic codoped p type zinc-oxide film 4.Various metals material can be adopted to form the material of hearth electrode 1 and top electrode 5, such as gold, silver or copper.Also can adopt metal compound material such as, to form described hearth electrode 1 and top electrode 5, ITO.
Embodiment 2
As shown in Figure 1, the structure of the laser diode of employing magnesium arsenic codoped p type zinc-oxide film of the present invention is:
The upper surface of Sapphire Substrate 2 has N-shaped nickel oxide film 3, and the thickness of this N-shaped nickel oxide film 3 is 400nm; Magnesium arsenic codoped p type zinc-oxide film 4, it is formed on the upper surface of described N-shaped nickel oxide film 3, wherein, the thickness of described magnesium arsenic codoped p type zinc-oxide film 4 is 300nm, in this magnesium arsenic codoped p type zinc-oxide film 4, the molar content of Mg is 11%, and the molar content of arsenic is 0.8%; Further, at normal temperatures, the piezoelectric constant d of the p-type ZnO crystal film 4 of magnesium arsenic codope
33be greater than 18pC/N, its resistivity is greater than 10
10Ω cm.
Hearth electrode 1 is formed on the lower surface of Sapphire Substrate 2, and top electrode 5 is formed on the upper surface of magnesium arsenic codoped p type zinc-oxide film 4.Various metals material can be adopted to form the material of hearth electrode 1 and top electrode 5, such as gold, silver or copper.Also can adopt metal compound material such as, to form described hearth electrode 1 and top electrode 5, ITO.
Above execution mode is to invention has been detailed introduction, but above-mentioned execution mode is not intended to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.
Claims (1)
1. adopt a laser diode for magnesium arsenic codoped p type zinc-oxide film, the structure of this laser diode is:
N-shaped nickel oxide film, it is formed on the upper surface of Sapphire Substrate; Magnesium arsenic codoped p type zinc-oxide film, it is formed on the upper surface of described N-shaped nickel oxide film, and hearth electrode, and it is formed on described N-shaped nickel oxide film lower surface, top electrode, and it is formed on the upper surface of described magnesium arsenic codoped p type zinc-oxide film;
Wherein, the thickness of described magnesium arsenic codoped p type zinc-oxide film is 400nm, and in this magnesium arsenic codoped p type zinc-oxide film, the molar content of Mg is 8-13%, and the molar content of arsenic is 0.5-1.5%; The thickness of described N-shaped nickel oxide film is 300-600nm;
Wherein, at normal temperatures, the piezoelectric constant d of the p-type ZnO crystal film of magnesium arsenic codope
33be greater than 18pC/N, its resistivity is greater than 10
10Ω cm;
Gold, silver, copper or ITO is adopted to form hearth electrode and top electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310064214.0A CN103178444B (en) | 2013-02-28 | 2013-02-28 | Laser diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310064214.0A CN103178444B (en) | 2013-02-28 | 2013-02-28 | Laser diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103178444A CN103178444A (en) | 2013-06-26 |
| CN103178444B true CN103178444B (en) | 2015-04-01 |
Family
ID=48638135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310064214.0A Active CN103178444B (en) | 2013-02-28 | 2013-02-28 | Laser diode |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151708B (en) * | 2013-03-01 | 2015-08-05 | 溧阳华晶电子材料有限公司 | A kind of magnesium arsenic codoped p type zinc-oxide film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1547264A (en) * | 2003-12-05 | 2004-11-17 | 中国科学院上海硅酸盐研究所 | Zinc oxide homogeneous p-n junction material and method for making same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8546797B2 (en) * | 2009-10-20 | 2013-10-01 | Stanley Electric Co., Ltd. | Zinc oxide based compound semiconductor device |
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2013
- 2013-02-28 CN CN201310064214.0A patent/CN103178444B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1547264A (en) * | 2003-12-05 | 2004-11-17 | 中国科学院上海硅酸盐研究所 | Zinc oxide homogeneous p-n junction material and method for making same |
Non-Patent Citations (2)
| Title |
|---|
| Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering;J.C.Fan et al.;《Semiconductor Science and Technology》;20100723;第25卷;第085009-2至085009-3页EXPERIMENT, RESULTS * |
| 赵龙.p-ZnMgO:As薄膜的MOCVD生长及其发光器件制备研究.《中国优秀硕士学位论文全文数据库 信息科技辑》.2012,(第11期),4.4 p-ZnMgO/n-GaN异质结发光器件的制备及其特性研究. * |
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|---|---|
| CN103178444A (en) | 2013-06-26 |
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Effective date of registration: 20190109 Address after: 213300 Hongkou Road 218, Zhongguancun Science and Technology Industrial Park, Liyang City, Changzhou City, Jiangsu Province Patentee after: Liyang High-tech Venture Center Address before: 213300 No. 86 Beimen East Road, Liyang City, Changzhou City, Jiangsu Province Patentee before: Liyang Hongda Motors Co., Ltd. |
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