CN103149745B - Chock insulator matter manufacture method on substrate - Google Patents
Chock insulator matter manufacture method on substrate Download PDFInfo
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- CN103149745B CN103149745B CN201310054769.7A CN201310054769A CN103149745B CN 103149745 B CN103149745 B CN 103149745B CN 201310054769 A CN201310054769 A CN 201310054769A CN 103149745 B CN103149745 B CN 103149745B
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- chock insulator
- insulator matter
- substrate layer
- matter substrate
- chock
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13398—Spacer materials; Spacer properties
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
Abstract
The invention discloses chock insulator matter manufacture method on a kind of substrate, comprising: on underlay substrate, form the first chock insulator matter substrate layer and be positioned at the second chock insulator matter substrate layer on the first chock insulator matter substrate layer; The speed of the second chock insulator matter substrate layer is greater than the speed of the first chock insulator matter substrate layer; The first chock insulator matter substrate layer and the second chock insulator matter substrate layer are carried out to exposure imaging, form chock insulator matter. The speed of the second chock insulator matter substrate layer is greater than the speed of the first chock insulator matter substrate layer, while using same mask plate exposure, the mask plate key size deviation of the second chock insulator matter substrate layer is less than the mask plate key size deviation of the first chock insulator matter substrate layer, therefore, bottom size one timing of the chock insulator matter lower floor forming at the first chock insulator matter substrate layer, the top dimension on the chock insulator matter upper strata that the second chock insulator matter substrate layer forms is larger. So chock insulator matter manufacture method can reduce the impact on liquid crystal panel aperture opening ratio in increasing chock insulator matter top diameter on substrate provided by the invention.
Description
Technical field
The present invention relates to technical field of liquid crystal display, particularly chock insulator matter manufacture method on a kind of substrate.
Background technology
In Display Technique field, liquid crystal panel has occupied aobvious with its little power consumption, frivolous, the advantage such as be easy to carryShow the market of panel. Liquid crystal panel comprises color membrane substrates, array base palte and is positioned at color membrane substrates and array baseLiquid crystal layer between plate, color membrane substrates and array base palte to box after, thick in order to maintain box between the two, orderFront employing is conventionally manufactured chock insulator matter and is realized on color membrane substrates.
As shown in Figure 1, color membrane substrates comprises the black matrix 02 being formed on underlay substrate, and black matrix 02 hasThe open area 01 corresponding with rgb pixel unit, has on the non-open area of black matrix 02 for supportingThe chock insulator matter 03 of color membrane substrates and array base palte.
As shown in Figure 2, chock insulator matter 03 of the prior art, the size between its top 031 and bottom 032Differ greatly, the diameter of general bottom 032 is than the large 10 ~ 20um of the diameter at top 031 left and right.
In field of liquid crystal display, for improving the intensity supporting between color membrane substrates and array base palte, and then improveThe intensity of liquid crystal panel, needs to increase the diameter at chock insulator matter 03 top 031 in design, to increase chock insulator matter 03Area of bearing; But, due to the diameter of the bottom 032 of chock insulator matter in prior art 03 and top 031Size difference between diameter is larger, is to improve the diameter at chock insulator matter 03 top 031, must increase simultaneously everyThe diameter of underbed 03 bottom 032, and chock insulator matter 03 in when design for avoiding chock insulator matter to pixel openings district liquidThe impact of brilliant normal alignment, the distance between edge and the open region of chock insulator matter 03 bottom 032 need to be greater than3 ~ 5um, has limited opening of liquid crystal panel to a certain extent when increasing chock insulator matter 03 top 031 diameterMouth rate.
Summary of the invention
The invention provides chock insulator matter manufacture method on a kind of substrate, this manufacture method can increase chock insulator matterWhen top diameter, reduce the impact on liquid crystal panel aperture opening ratio.
For achieving the above object, the invention provides following technical scheme:
Chock insulator matter manufacture method on a kind of substrate, comprising:
On underlay substrate, form the first chock insulator matter substrate layer and be positioned at second on the first chock insulator matter substrate layerChock insulator matter substrate layer; The speed of described the second chock insulator matter substrate layer is greater than the sensitization of the first chock insulator matter substrate layerDegree;
Described the first chock insulator matter substrate layer and the second chock insulator matter substrate layer are carried out to exposure imaging, form chock insulator matter.
Preferably, after described formation chock insulator matter, also comprise:
Chock insulator matter is carried out to rear solidifying.
Preferably, describedly on underlay substrate, form the first chock insulator matter substrate layer and be positioned at the first chock insulator matter base materialBefore the second chock insulator matter substrate layer on layer, also comprise:
Clean underlay substrate, and the underlay substrate after cleaning is dried.
Preferably, describedly on underlay substrate, form the first chock insulator matter substrate layer and be positioned at the first chock insulator matter base materialThe second chock insulator matter substrate layer on layer comprises:
On underlay substrate, apply the first chock insulator matter substrate layer;
On described the first chock insulator matter substrate layer, apply the second chock insulator matter substrate layer.
Preferably, described the first chock insulator matter substrate layer and the second chock insulator matter substrate layer are carried out exposure imaging itBefore also comprise:
The first chock insulator matter substrate layer and the second chock insulator matter substrate layer are carried out to precuring.
Preferably, describedly on underlay substrate, form the first chock insulator matter substrate layer and be positioned at the first chock insulator matter base materialThe second chock insulator matter substrate layer on layer comprises:
On underlay substrate, form the first chock insulator matter substrate layer;
To the first chock insulator matter substrate layer precuring;
On the first chock insulator matter substrate layer, form the second chock insulator matter substrate layer.
Preferably, described the first chock insulator matter substrate layer and the second chock insulator matter substrate layer are carried out exposure imaging itBefore also comprise:
Described the second chock insulator matter substrate layer is carried out to precuring.
Preferably, describedly on underlay substrate, form the first chock insulator matter substrate layer and be positioned at the first chock insulator matter base materialThe second chock insulator matter substrate layer on layer comprises:
On underlay substrate, apply the chock insulator matter base of the chock insulator matter resin synthesis material with two kinds of different speedMaterial layer, and the density of the higher chock insulator matter resin synthesis material of speed is greater than the chock insulator matter tree that speed is lowerThe density of fat synthesis material;
Chock insulator matter substrate layer is rotated to centrifugal layering, the chock insulator matter of the different densities in chock insulator matter substrate layerResin synthesis material points to the descending vertical distribution of direction of bottom along chock insulator matter top, speed is higherChock insulator matter resin synthesis material forms described the second chock insulator matter substrate layer, and the chock insulator matter resin that speed is lower closesBecome raw material to form described the first chock insulator matter substrate layer.
Preferably, described chock insulator matter resin synthesis material comprises: polymer, containing the crosslinking agent of multi-functional group,Light trigger and dicyandiamide solution.
Preferably, described polymer is acrylic resin, and the proportion of described polymer is 10 ~ 25%; Described friendshipConnection agent is the acrylic monomers that contains the functional group such as multiple amino, isocyanide ester base, described light trigger bagDraw together one or more in benzoin, acylphosphine oxide, thioxanthones and described light trigger and friendshipThe proportion of connection agent is 10 ~ 25%; Described dicyandiamide solution comprises diethylene glycol dimethyl ether, 1-Methoxy-2-propyl acetateIn at least one, and the proportion of described dicyandiamide solution is 50 ~ 80%.
Chock insulator matter manufacture method on substrate provided by the invention, comprising:
On underlay substrate, form the first chock insulator matter substrate layer and be positioned at second on the first chock insulator matter substrate layerChock insulator matter substrate layer; The speed of described the second chock insulator matter substrate layer is greater than the sensitization of the first chock insulator matter substrate layerDegree;
Described the first chock insulator matter substrate layer and the second chock insulator matter substrate layer are carried out to exposure imaging, form chock insulator matter.
On substrate provided by the invention in chock insulator matter manufacture method, due to the second chock insulator matter base on underlay substrateMaterial layer is positioned on the first chock insulator matter substrate layer, to the first chock insulator matter substrate layer and the second chock insulator matter substrate layerAfter exposure imaging, the first chock insulator matter substrate layer forms the lower floor of chock insulator matter, and the second chock insulator matter substrate layer shapeBecome the upper strata of chock insulator matter; Because the speed of the second chock insulator matter substrate layer is greater than the sense of the first chock insulator matter substrate layerLuminosity, therefore, while using same mask plate exposure, the mask plate critical size of the second chock insulator matter substrate layerDeviation MaskCDBias is less than the MaskCDBias of the first chock insulator matter substrate layer, wherein
MaskCDBias=mask plate design size-actual output size
Therefore, bottom size one timing of the chock insulator matter lower floor forming at the first chock insulator matter substrate layer, second everyThe top dimension on the chock insulator matter upper strata that underbed substrate layer forms is larger.
Therefore, on substrate provided by the invention, chock insulator matter manufacture method can increase chock insulator matter top diameterReduce the impact on liquid crystal panel aperture opening ratio simultaneously.
Brief description of the drawings
Fig. 1 is a kind of structural representation of color membrane substrates in prior art;
Fig. 2 is the structural representation of chock insulator matter of the prior art;
Fig. 3 is the schematic flow sheet of chock insulator matter manufacture method on substrate provided by the invention;
Fig. 4 is a kind of structure that adopts the chock insulator matter that on substrate provided by the invention, chock insulator matter manufacture method is manufacturedSchematic diagram.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clearlyChu, intactly description, obviously, described embodiment is only the present invention's part embodiment, instead ofWhole embodiment. Based on the embodiment in the present invention, those of ordinary skill in the art are not making creationThe every other embodiment obtaining under property work prerequisite, belongs to the scope of protection of the invention.
In the manufacture process of liquid crystal display, chock insulator matter both can be manufactured on color membrane substrates, also can makeMake on array base palte, the present embodiment, taking color membrane substrates as example, illustrates the manufacture process of chock insulator matter.
Embodiment mono-
As shown in Figure 3, chock insulator matter manufacture method on the substrate that the present embodiment provides, comprising:
Step S301: form the first chock insulator matter substrate layer and be positioned at the first chock insulator matter substrate layer on underlay substrateOn the second chock insulator matter substrate layer; The speed of the second chock insulator matter substrate layer is greater than the first chock insulator matter substrate layerSpeed;
Step S302: the first chock insulator matter substrate layer and the second chock insulator matter substrate layer are carried out to exposure imaging, formChock insulator matter.
On substrate provided by the invention in chock insulator matter manufacture method, due to the second chock insulator matter base on underlay substrateMaterial layer is positioned on the first chock insulator matter substrate layer, to the first chock insulator matter substrate layer and the second chock insulator matter substrate layerAfter exposure imaging, as shown in Figure 4, the first chock insulator matter substrate layer forms chock insulator matter lower floor to the chock insulator matter of formation32, and the second chock insulator matter substrate layer forms chock insulator matter upper strata 31; Because the speed of the second chock insulator matter substrate layerBe greater than the speed of the first chock insulator matter substrate layer, therefore, while using same mask plate exposure, the second dottle pinThe mask plate key size deviation MaskCDBias of thing substrate layer is less than the Mask of the first chock insulator matter substrate layerCDBias, wherein
MaskCDBias=mask plate design size-actual output size
Therefore, bottom 321 size one timings of the chock insulator matter lower floor 32 forming at the first chock insulator matter substrate layer,Top 311 sizes on the chock insulator matter upper strata 31 that the second chock insulator matter substrate layer forms are larger.
So chock insulator matter manufacture method can increase chock insulator matter top diameter on substrate provided by the inventionReduce the impact on liquid crystal panel aperture opening ratio simultaneously.
In a kind of preferred embodiment, above-mentioned steps S302 also comprises after forming chock insulator matter:
The chock insulator matter forming in step S302 is carried out to rear solidifying. After the chock insulator matter obtaining after developing is carried outSolidify the mechanical strength that can improve chock insulator matter, improve the enabling capabilities of chock insulator matter.
In a kind of preferred embodiment, above-mentioned steps S301 forms the first chock insulator matter substrate layer on underlay substrateAlso comprise before with the second chock insulator matter substrate layer being positioned on the first chock insulator matter substrate layer:
Clean underlay substrate, and the underlay substrate after cleaning is dried.
On underlay substrate, form the first chock insulator matter substrate layer and be positioned at second on the first chock insulator matter substrate layerBefore chock insulator matter substrate layer, underlay substrate is cleaned and is dried, can remove the dirt existing on underlay substrateDye thing, and then can improve the adhesion strength between chock insulator matter and the underlay substrate of formation, and then improve dottle pinThe stability of strutting system of thing.
Embodiment bis-
On the basis of embodiment mono-and preferred embodiment thereof, chock insulator matter on the substrate that the present embodiment providesIn manufacture method, step S301 forms the first chock insulator matter substrate layer and is positioned at the first chock insulator matter on underlay substrateThe second chock insulator matter substrate layer on substrate layer specifically comprises:
On underlay substrate, apply the first chock insulator matter substrate layer;
On the first chock insulator matter substrate layer, apply the second chock insulator matter substrate layer.
, in embodiment mono-, in step S301, on underlay substrate, form the first chock insulator matter substrate layer and be positioned at theThe second chock insulator matter substrate layer on one chock insulator matter substrate layer adopts the mode of twice coating to realize, and can improveThe uniformity that the first chock insulator matter substrate layer and the second chock insulator matter substrate layer form. Certainly,, except applying, also canTo adopt other generation types such as deposition, sputter to realize.
In a kind of preferred embodiment, at step S302 to the first chock insulator matter substrate layer and the second chock insulator matter base materialLayer carries out also comprising before exposure imaging:
The first chock insulator matter substrate layer and the second chock insulator matter substrate layer are carried out to precuring.
Embodiment tri-
On the basis of embodiment mono-and preferred embodiment thereof, chock insulator matter system on the substrate that the present embodiment providesIn making method, step S301 forms the first chock insulator matter substrate layer and is positioned at the first chock insulator matter base on underlay substrateThe second chock insulator matter substrate layer on material layer specifically comprises:
On underlay substrate, form the first chock insulator matter substrate layer;
To the first chock insulator matter substrate layer precuring;
On the first chock insulator matter substrate layer, form the second chock insulator matter substrate layer.
Form the first chock insulator matter substrate layer on underlay substrate after, the first chock insulator matter substrate layer is carried out solid in advanceChange, can be reduced in while forming the second chock insulator matter substrate layer on the first chock insulator matter substrate layer the second chock insulator matter baseThe phenomenon that the material of the material of material layer and the first chock insulator matter substrate layer reacts, and or both mixThe generation of phenomenon.
In a kind of preferred embodiment, at step S302 to the first chock insulator matter substrate layer and the second chock insulator matter base materialLayer carries out also comprising before exposure imaging:
The second chock insulator matter substrate layer is carried out to precuring.
Embodiment tetra-
On the basis of embodiment mono-and preferred embodiment thereof, chock insulator matter system on the substrate that the present embodiment providesIn making method, step S301 forms the first chock insulator matter substrate layer and is positioned at the first chock insulator matter base on underlay substrateThe second chock insulator matter substrate layer on material layer specifically comprises:
On underlay substrate, apply the dottle pin of the chock insulator matter resin synthesis material with at least two kinds of different speedThing substrate layer, and the density of the higher chock insulator matter resin synthesis material of speed is greater than the dottle pin that speed is lowerThe density of resin synthesis material;
Chock insulator matter substrate layer is rotated to centrifugal layering, the chock insulator matter of the different densities in chock insulator matter substrate layerResin synthesis material points to the descending vertical distribution of direction of bottom along chock insulator matter top, speed is higherChock insulator matter resin synthesis material forms described the second chock insulator matter substrate layer, and the chock insulator matter resin that speed is lower closesBecome raw material to form described the first chock insulator matter substrate layer.
The method that above-mentioned the first chock insulator matter substrate layer and the second chock insulator matter substrate layer form, can make two kinds notThe direction of pointing to bottom with the chock insulator matter resin synthesis material of speed according to its density along chock insulator matter top is by greatlyTo little vertical distribution, form natural gradient transition, in the shape of carrying out the chock insulator matter obtaining after step S302More even.
Particularly, above-mentioned chock insulator matter resin synthesis material comprises: polymer, containing the crosslinking agent of multi-functional group,Light trigger and dicyandiamide solution.
More specifically, above-mentioned polymer is acrylic resin, and the proportion of described polymer is 10 ~ 25%; DescribedCrosslinking agent is the acrylic monomers that contains the functional group such as multiple amino, isocyanide ester base, described light triggerComprise one or more in benzoin, acylphosphine oxide, thioxanthones, and described light trigger withThe proportion of crosslinking agent is 10 ~ 25%; Described dicyandiamide solution comprises diethylene glycol dimethyl ether, propylene glycol monomethyl ether acetic acidAt least one in ester, and the proportion of described dicyandiamide solution is 50 ~ 80%. Preferably, described dicyandiamide solution bagContaining diethylene glycol dimethyl ether and 1-Methoxy-2-propyl acetate, and the proportion of described dicyandiamide solution is 50 ~ 80%.
Obviously, those skilled in the art can carry out various changes and modification and de-to the embodiment of the present inventionFrom the spirit and scope of the present invention. Like this, if these amendments of the present invention and modification belong to right of the present inventionRequire and the scope of equivalent technologies within, the present invention be also intended to comprise these change and modification interior.
Claims (10)
1. a chock insulator matter manufacture method on substrate, is characterized in that, comprising:
On underlay substrate, form the first chock insulator matter substrate layer and be positioned at the on the first chock insulator matter substrate layerTwo chock insulator matter substrate layers; The speed of described the second chock insulator matter substrate layer is greater than the sense of the first chock insulator matter substrate layerLuminosity, with in the time using same mask plate exposure, the mask plate critical size of the second chock insulator matter substrate layer is inclined to one sidePoor MaskCDBias is less than the mask plate key size deviation of the first chock insulator matter substrate layer; Wherein, maskPlate key size deviation=mask plate design size-actual output size;
Described the first chock insulator matter substrate layer and the second chock insulator matter substrate layer are carried out to exposure imaging, form dottle pinThing.
2. manufacture method according to claim 1, is characterized in that, after described formation chock insulator matterAlso comprise:
Chock insulator matter is carried out to rear solidifying.
3. manufacture method according to claim 1, is characterized in that, described on underlay substrate shapeBefore becoming the first chock insulator matter substrate layer and being positioned at the second chock insulator matter substrate layer on the first chock insulator matter substrate layerAlso comprise:
Clean underlay substrate, and the underlay substrate after cleaning is dried.
4. according to the manufacture method described in claim 1～3 any one, it is characterized in that, described at substrateOn substrate, form the first chock insulator matter substrate layer and be positioned at the second chock insulator matter base on the first chock insulator matter substrate layerMaterial layer comprises:
On underlay substrate, apply the first chock insulator matter substrate layer;
On described the first chock insulator matter substrate layer, apply the second chock insulator matter substrate layer.
5. manufacture method according to claim 4, is characterized in that, to described the first chock insulator matterSubstrate layer and the second chock insulator matter substrate layer carry out also comprising before exposure imaging:
The first chock insulator matter substrate layer and the second chock insulator matter substrate layer are carried out to precuring.
6. according to the manufacture method described in claim 1～3 any one, it is characterized in that, described at substrateOn substrate, form the first chock insulator matter substrate layer and be positioned at the second chock insulator matter base on the first chock insulator matter substrate layerMaterial layer comprises:
On underlay substrate, form the first chock insulator matter substrate layer;
To the first chock insulator matter substrate layer precuring;
On the first chock insulator matter substrate layer, form the second chock insulator matter substrate layer.
7. manufacture method according to claim 6, is characterized in that, to described the first chock insulator matterSubstrate layer and the second chock insulator matter substrate layer carry out also comprising before exposure imaging:
Described the second chock insulator matter substrate layer is carried out to precuring.
8. according to the manufacture method described in claim 1～3 any one, it is characterized in that, described at substrateOn substrate, form the first chock insulator matter substrate layer and be positioned at the second chock insulator matter base on the first chock insulator matter substrate layerMaterial layer comprises:
On underlay substrate, apply the chock insulator matter of the chock insulator matter resin synthesis material with two kinds of different speedSubstrate layer, and the density of the higher chock insulator matter resin synthesis material of speed is greater than the chock insulator matter that speed is lowerThe density of resin synthesis material;
Chock insulator matter substrate layer is rotated to centrifugal layering, the chock insulator matter of the different densities in chock insulator matter substrate layerResin synthesis material points to the descending vertical distribution of direction of bottom along chock insulator matter top, speed is higherChock insulator matter resin synthesis material forms described the second chock insulator matter substrate layer, and the chock insulator matter resin that speed is lower closesBecome raw material to form described the first chock insulator matter substrate layer.
9. manufacture method according to claim 8, is characterized in that, described resin synthesis material bagDraw together: polymer, containing crosslinking agent, light trigger and the dicyandiamide solution of multi-functional group.
10. manufacture method according to claim 9, is characterized in that, described polymer is acrylic acidResin, and the proportion of described polymer is 10～25%; Described crosslinking agent is for containing amino functional group, differentThe acrylic monomers of nitrile perester radical functional group, described light trigger comprise benzoin, acylphosphine oxide,A class or multiclass in thioxanthones three class materials, and the proportion of described light trigger and crosslinking agent is10～25%; Described dicyandiamide solution comprises at least one in diethylene glycol dimethyl ether, 1-Methoxy-2-propyl acetateKind, and the proportion of described dicyandiamide solution is 50～80%.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310054769.7A CN103149745B (en) | 2013-02-20 | 2013-02-20 | Chock insulator matter manufacture method on substrate |
| PCT/CN2013/074030 WO2014127567A1 (en) | 2013-02-20 | 2013-04-10 | Method for manufacturing spacer on substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310054769.7A CN103149745B (en) | 2013-02-20 | 2013-02-20 | Chock insulator matter manufacture method on substrate |
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| CN103149745A CN103149745A (en) | 2013-06-12 |
| CN103149745B true CN103149745B (en) | 2016-05-18 |
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| CN201310054769.7A Active CN103149745B (en) | 2013-02-20 | 2013-02-20 | Chock insulator matter manufacture method on substrate |
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| CN (1) | CN103149745B (en) |
| WO (1) | WO2014127567A1 (en) |
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| CN104267576B (en) * | 2014-10-13 | 2019-10-11 | 京东方科技集团股份有限公司 | The production method of mask plate, the production method of cylindrical spacer and substrate |
| TWI750418B (en) * | 2018-10-15 | 2021-12-21 | 友達光電股份有限公司 | Display device and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101303522A (en) * | 2007-05-10 | 2008-11-12 | 比亚迪股份有限公司 | Colored filter with spacer, liquid crystal display device and method for making the same |
| CN101675377A (en) * | 2007-06-11 | 2010-03-17 | 夏普株式会社 | Method of manufacturing color filter substrate, method of manufacturing liquid crystal display device, color filter substrate, and liquid crystal display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990003524A (en) * | 1997-06-25 | 1999-01-15 | 김영환 | Partition wall formation method of plasma display panel |
| JP4318954B2 (en) * | 2003-05-09 | 2009-08-26 | 富士通株式会社 | Liquid crystal panel and manufacturing method thereof |
| JP2005241855A (en) * | 2004-02-25 | 2005-09-08 | Seiko Epson Corp | Electrooptical device, electronic apparatus, and method for manufacturing electrooptical device |
| KR20070013817A (en) * | 2005-07-27 | 2007-01-31 | 삼성전자주식회사 | Liquid crystal display and method for fabricating the same |
| CN102707356B (en) * | 2011-11-01 | 2014-05-21 | 京东方科技集团股份有限公司 | Method for manufacturing color filter, color filter and display device |
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2013
- 2013-02-20 CN CN201310054769.7A patent/CN103149745B/en active Active
- 2013-04-10 WO PCT/CN2013/074030 patent/WO2014127567A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101303522A (en) * | 2007-05-10 | 2008-11-12 | 比亚迪股份有限公司 | Colored filter with spacer, liquid crystal display device and method for making the same |
| CN101675377A (en) * | 2007-06-11 | 2010-03-17 | 夏普株式会社 | Method of manufacturing color filter substrate, method of manufacturing liquid crystal display device, color filter substrate, and liquid crystal display device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014127567A1 (en) | 2014-08-28 |
| CN103149745A (en) | 2013-06-12 |
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