CN101675377A - Method of manufacturing color filter substrate, method of manufacturing liquid crystal display device, color filter substrate, and liquid crystal display device - Google Patents

Method of manufacturing color filter substrate, method of manufacturing liquid crystal display device, color filter substrate, and liquid crystal display device Download PDF

Info

Publication number
CN101675377A
CN101675377A CN200880014565A CN200880014565A CN101675377A CN 101675377 A CN101675377 A CN 101675377A CN 200880014565 A CN200880014565 A CN 200880014565A CN 200880014565 A CN200880014565 A CN 200880014565A CN 101675377 A CN101675377 A CN 101675377A
Authority
CN
China
Prior art keywords
layer
liquid crystal
filter substrate
stacked
sept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN200880014565A
Other languages
Chinese (zh)
Other versions
CN101675377B (en
Inventor
坂田彻
小原安弘
秋友雅温
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of CN101675377A publication Critical patent/CN101675377A/en
Application granted granted Critical
Publication of CN101675377B publication Critical patent/CN101675377B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/201Filters in the form of arrays
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29DPRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00Producing optical elements, e.g. lenses or prisms
    • B29D11/00634Production of filters
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29DPRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00Producing optical elements, e.g. lenses or prisms
    • B29D11/0073Optical laminates
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133512Light shielding layers, e.g. black matrix
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • G02F1/13394Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Optical Filters (AREA)

Abstract

A method of manufacturing a color filter substrate by which a color filter substrate with a stacked spacer can be manufactured efficiently. This method of manufacturing a color filter substrate is formanufacturing a color filter substrate formed with a colored layer, an electrode, a light blocking layer, and a stacked spacer on the substrate, and includes a process of forming the colored layer and a base colored layer of the stacked spacer, a process of forming the electrode, and a process of forming the light blocking layer and a top layer of the stacked spacer.

Description

The manufacture method of colored filter substrate, the manufacture method of liquid crystal indicator, colored filter substrate and liquid crystal indicator
Technical field
The present invention relates to the manufacture method of colored filter substrate, manufacture method, colored filter substrate and the liquid crystal indicator of liquid crystal indicator.More specifically, relate to: the manufacture method that is suitable on colored filter substrate forming the colored filter substrate of stacked sept and possesses the liquid crystal indicator of this colored filter substrate, and utilize suitably colored filter substrate manufactured and possess the liquid crystal indicator of this colored filter substrate of this manufacture method.
Background technology
Colored filter substrate is the dyed layer with redness (R), blue (B), green (G) etc., realizes the colored parts that show in display device such as liquid crystal indicator.Liquid crystal indicator is filled in liquid crystal layer in the display panels by utilization, control is from the optical characteristics of the emergent light of light source and show, generally have active-matrix substrate, colored filter substrate and be clamped in liquid crystal layer between them, utilize to be configured in the thickness (cell gap) that the substrate distance thing keeps liquid crystal layer.
As sept, the known column spacer that the spherical sept that is made of plastics or inorganic material etc. is arranged, constitute by resin material etc.Wherein, column spacer can utilize photoresist directly to form on substrate by photoetching process, and superior part is to carry out high-precision configuration.In addition, also there is the situation (for example, with reference to patent documentation 1) that is formed by black matrix layer in this column spacer.In addition, as column spacer, except this resin bed, also having with the tinting layer material is the mode (for example, with reference to patent documentation 2) of the so-called stacked sept of inscape.
As the manufacture method of colored filter substrate, knownly be generally following order.At first, on transparency carrier, after form dyed layer the light shield layer that forms by black matrix of interregional formation.Then, the dyed layer of red (R), blue (B), green (G) etc. is formed into successively the position of regulation.Then, on whole, be formed for applying the transparency electrode (common electrode) of voltage to liquid crystal layer.At last, partly on common electrode, form several columns (stacked) sept.
But liquid crystal indicator is developed rapidly in recent years, particularly needs further to improve for the formation method of stacked sept, manufacture method with colored filter substrate of stacked sept.
Patent documentation 1: TOHKEMY 2003-228085 communique
Patent documentation 2: TOHKEMY 2006-23733 communique
Summary of the invention
The present invention finishes in view of above-mentioned present situation, purpose is to provide: can make efficiently the colored filter substrate with stacked sept colored filter substrate manufacture method and possess the manufacture method of the liquid crystal indicator of this colored filter substrate, and utilize colored filter substrate that this manufacture method suitably makes and the liquid crystal indicator that possesses this colored filter substrate.
Present inventors, the method for the manufacturing efficient that improves colored filter substrate carried out various researchs after, be conceived to the order of the manufacturing process of colored filter substrate.Discovery is after the use same material forms the layer of dyed layer and the base part that constitutes stacked sept simultaneously, by using same material to form the layer at the top of light shield layer and the stacked sept of formation simultaneously, can reduce the manufacturing process of prior art, expect ideally to realize the method for above-mentioned purpose, so far realize the present invention.
Promptly, the invention provides a kind of manufacture method of colored filter substrate, this colored filter substrate substrate is provided with dyed layer, electrode, light shield layer and stacked sept, and above-mentioned manufacture method is carried out following operation: the operation that forms the substrate dyed layer of dyed layer and stacked sept; Form the operation of electrode; And the operation that forms the top layer of light shield layer and stacked sept.
Below the present invention is described in detail.
The manufacture method of colored filter substrate of the present invention is the manufacture method that substrate is provided with the colored filter substrate of dyed layer, electrode, light shield layer and stacked sept.Manufacturing method according to the invention, the column spacer that can make the holding unit gap is the mode that lamination forms the so-called stacked sept of tinting layer material etc., therefore, can carry out the formation of the substrate dyed layer of the formation of the colored dyed layer that shows usefulness and stacked sept at same in-process, improve the efficient of manufacturing process.In addition, in this manual, " carrying out at same in-process " comprises the situation of carrying out each processing simultaneously, the situation of carrying out each processing in an operation continuously.As the example that carries out each processing in the operation continuously, for example can be set forth in the mode that comprises the processing of the substrate dyed layer that forms stacked sept in the processing that is formed for the colored dyed layer that shows.More specifically, can enumerate following mode: the green of making the substrate dyed layer of the green be used for the colored dyed layer that shows and stacked sept in order, then, make the blueness of the substrate dyed layer of the blueness be used for the colored dyed layer that shows and stacked sept in order.Like this, handle, for example can use same device to be formed for the colored dyed layer that shows and the substrate dyed layer of stacked sept, improve the efficient of manufacturing process by carry out each at same in-process.
The manufacture method of colored filter substrate of the present invention is carried out: the operation that forms the top layer of the operation of the substrate dyed layer of dyed layer and stacked sept, the operation that forms electrode and formation light shield layer and stacked sept.
Manufacturing method according to the invention can be carried out the formation of the substrate dyed layer of the formation of dyed layer and stacked sept at same in-process.The stacked sept that utilizes manufacture method of the present invention to form has the structure that is formed with the top layer on the substrate dyed layer, but is not limited to these inscapes, for example also can have electrode etc. between substrate dyed layer and top layer.In addition, the substrate dyed layer is not defined as individual layer, can be a plurality of layers, and the color of these layers also can be different.
Manufacturing method according to the invention can be carried out the formation of the top layer of the formation of light shield layer and stacked sept in same operation.Because the top layer of stacked sept can be formed by photoresist etc., so, be same material for example, can form the top layer of light shield layer and stacked sept at same in-process by making photoresist that constitutes light shield layer and the photoresist that constitutes the top layer of stacked sept.That is, manufacturing method according to the invention, the material of the enough formation light shield layers of energy forms the top layer.
Manufacturing method according to the invention, because form the operation of the top layer of the operation of the substrate dyed layer of dyed layer and stacked sept, the operation that forms electrode and formation light shield layer and stacked sept in order successively, so, the colored filter substrate of making is formed with top layer (light shield layer) with existing different on electrode.In addition, manufacture method of the present invention comprises these operations indispensably, also can be with or without other operation.
By utilizing manufacture method of the present invention to form each component parts of colored filter substrate, can form colored filter substrate and liquid crystal indicator with the manufacturing process that lacks than prior art, thus, can reduce and make required (delivery cycle: lead time) time, reduce the photomask that uses, improve yield rate, reduce manufacturing cost.
The present invention also provides a kind of manufacture method of liquid crystal indicator, and it is provided with liquid crystal layer between according to the colored filter substrate of above-mentioned manufacture method manufacturing and active-matrix substrate.The manufacture method of liquid crystal indicator of the present invention is because comprise the manufacture method of above-mentioned colored filter substrate, so have good manufacturing efficient.As the method that liquid crystal layer is arranged between colored filter substrate and the active-matrix substrate, can enumerate: the method for after dripping the liquid crystal layer material, sticking another substrate to a substrate, will between these substrates, inject the method etc. of liquid crystal layer material behind a pair of baseplate-laminating.
The invention provides a kind of colored filter substrate, its substrate is provided with dyed layer, electrode, light shield layer and stacked sept, wherein, above-mentioned stacked sept has the structure that is formed with the top layer on the substrate dyed layer, and above-mentioned top layer is made of the material that constitutes light shield layer.Colored filter substrate of the present invention is because suitably make according to above-mentioned manufacture method, so have good productive capacity.The stacked sept that colored filter substrate of the present invention had has the structure that is formed with the top layer on the substrate dyed layer, but is not limited to these inscapes, for example, also can have electrode etc. between substrate dyed layer and top layer.In addition, the substrate dyed layer is not defined as individual layer, can be a plurality of layers yet, and the color of these layers also can be different.
The present invention also provides a kind of liquid crystal indicator, and it comprises above-mentioned colored filter substrate, active-matrix substrate and is arranged on liquid crystal layer between them.Liquid crystal indicator of the present invention comprises the colored filter substrate of the invention described above, utilizes above-mentioned manufacture method suitably to make liquid crystal indicator, therefore has good productive capacity.
Below optimal way of the present invention is described in detail.
In the manufacture method of liquid crystal indicator of the present invention, preferred above-mentioned stacked sept is to be formed with the overlapping mode of the thin film transistor (TFT) of active-matrix substrate.And in liquid crystal indicator of the present invention, the thin film transistor (TFT) of preferred above-mentioned stacked sept and active-matrix substrate is overlapping.As the zone of the stacked sept of configuration, preferably with thin film transistor (TFT) (TFT:Thin FilmTransistor) overlapping areas.TFT is the semiconductor element that the on-off element as active-matrix substrate is used.In the liquid crystal indicator of active array type, in order to prevent that exterior light from shining the semiconductor portion of TFT, because of light stimulus causes the deterioration of TFT, preferably in colored filter substrate, light shield layer more than the width that width is TFT is set with the TFT overlapping areas, make whole this TFT by shading.Here, in the present invention, because the top layer of stacked sept has light-proofness, so dispose this top layer by mode with the semiconductor portion that covers TFT exactly, even reduce the area of light shield layer, also can suppress the deterioration of the TFT that causes by light stimulus fully.And, by stacked sept of the present invention is configured in the overlapping areas with TFT, can realize the raising of aperture opening ratio.
In the manufacture method of liquid crystal indicator of the present invention, preferred above-mentioned stacked sept is to be formed with the overlapping mode of the light shielding part of active-matrix substrate.In addition, in liquid crystal indicator of the present invention, the light shielding part of preferred above-mentioned stacked sept and active-matrix substrate is overlapping.The liquid crystal indicator of manufacturing method according to the invention manufacturing and the stacked sept that forms in liquid crystal indicator of the present invention comprise the material with light-proofness.Therefore, do not reduce, preferably form stacked sept in the zone of the light shielding part that forms active-matrix substrate in order to make aperture ratio of pixels.In addition, because one of the present invention is characterised in that, form the light shield layer that colored filter substrate had and the top layer of stacked sept at same in-process, thus the light shielding part of preferred and active-matrix substrate is overlapping rather than with the region overlapping of the light shield layer that is overlapped in colored filter substrate.
Above-mentioned light shielding part is preferably the maintenance capacitance wiring.In the light shielding part as with stacked sept overlapping areas suitable be to keep on electric capacity (Cs) distribution.The Cs distribution is configured in the active-matrix substrate side, keep electric capacity with formation between electrode that is arranged on a side relative across dielectric film or the distribution with the Cs distribution, even the potential change in the viewing area also can keep current potential auxiliaryly, generally constitute by material with light-proofness.Therefore, by making stacked sept and Cs distribution overlapping, can avoid aperture opening ratio to reduce.In addition, the zone that forms the Cs distribution generally is not and the light shield layer overlapping areas of colored filter substrate, just in this point, is suitable for the present invention yet.
Above-mentioned light shielding part is preferably gate wirings.In the light shielding part as with stacked sept overlapping areas suitable be on the gate wirings.Gate wirings is configured on the active-matrix substrate, is used for semiconductor element is applied grid voltage, generally is made of the material with light-proofness.Therefore, by making stacked sept and gate wirings overlapping, can avoid the reduction of aperture opening ratio.In addition, forming the zone of gate wirings, is when being formed (patterning) for the bar structure by image under the situation of same color, not to be the light shield layer overlapping areas with colored filter substrate at adjacent dyed layer for example, just in this point, also be suitable for the present invention.
The effect of invention
Manufacture method according to colored filter substrate of the present invention, because can in same operation, form the layer of the base part of dyed layer and the stacked sept of formation, and can in same operation, form the layer of the part at light shield layer and the top that constitutes stacked sept, so, compared with prior art, can reduce manufacturing process ground and make colored filter substrate, thus, can reduce and make required (delivery cycle: lead time) time, reduce the photomask that uses, improve yield rate, reduce manufacturing cost.
Description of drawings
Fig. 1 is the schematic cross-section of the colored filter substrate that liquid crystal indicator had of making in embodiment 1.
Fig. 2 is the floor map of the colored filter substrate that liquid crystal indicator had of making in embodiment 1.
Fig. 3 is the schematic cross-section of mode of representing the superimposed configuration of TFT of the top layer of colored filter substrate of embodiment 1 and active-matrix substrate in more detail.(a) mode of expression prior art, (b) mode of expression embodiment 1.
Fig. 4-the 1st, the synoptic diagram of the manufacturing process of the colored filter substrate of expression embodiment 1, expression is formed up to the stage of dyed layer and substrate dyed layer.
Fig. 4-the 2nd, the synoptic diagram of the manufacturing process of the colored filter substrate of expression embodiment 1, expression is formed up to the stage of common electrode.
Fig. 4-the 3rd, the synoptic diagram of the manufacturing process of the colored filter substrate of expression embodiment 1, expression is formed up to the stage of light shield layer and top layer.
Fig. 5 is the schematic cross-section of the colored filter substrate that liquid crystal indicator had of making in embodiment 2.
Fig. 6 is the floor map of the colored filter substrate that liquid crystal indicator had of making in embodiment 3.
Fig. 7 is the floor map of the colored filter substrate that liquid crystal indicator had of making in embodiment 4.(a) be illustrated in the mode that disposes stacked sept with the TFT overlapping areas.(b) be illustrated in the mode that disposes stacked sept with Cs distribution overlapping areas.(c) be illustrated in the mode that disposes stacked sept with the gate wirings overlapping areas.
Fig. 8 is the floor map of the colored filter substrate that liquid crystal indicator had of making in embodiment 5.
Fig. 9 is the schematic cross-section of the colored filter substrate that liquid crystal indicator had of making in comparative example 1.
Figure 10-the 1st, the synoptic diagram of the manufacturing process of the colored filter substrate of expression comparative example 1, the stage to light shield layer is made in expression.
Figure 10-the 2nd, the synoptic diagram of the manufacturing process of the colored filter substrate of expression comparative example 1, expression is formed up to the stage of dyed layer and substrate dyed layer.
Figure 10-the 3rd, the synoptic diagram of the manufacturing process of the colored filter substrate of expression comparative example 1, expression is formed up to the stage of common electrode.
Figure 10-the 4th, the synoptic diagram of the manufacturing process of the colored filter substrate of expression comparative example 1, expression is formed up to the stage of top layer.
Symbol description
1,11,21,101,111,121: substrate
2,12,102: common electrode
3,13,23,33,43,103,113: light shield layer (BM)
4,14,24,34,44,104: red colored layer
5,15,25,35,45,105: the green coloring layer
6,16,26,36,46,106: blue-colored layer
14a: red colored layer (stacked sept)
5a, 15a, 105a: green coloring layer (stacked sept)
6a, 16a, 106a: blue-colored layer (stacked sept)
7,17,27,37,47: top layer (BM)
107: top layer (transparent resin)
8,18,108: active-matrix substrate
9,19,29,39,49,109: stacked sept
10,20,110: liquid crystal layer
50、150、250:TFT
50a: groove
60,160: keep electric capacity (Cs) distribution (light shielding part)
170: gate wirings (light shielding part)
80,180: exterior light
Embodiment
With reference to accompanying drawing, lift following examples the present invention further is elaborated, but the present invention has more than and is defined in these embodiment.
(embodiment 1)
Fig. 1 is the schematic cross-section of the colored filter substrate that liquid crystal indicator had made in embodiment 1, and also is the schematic cross-section of A-B line shown in Figure 2.As shown in Figure 1, the colored filter substrate of making among the embodiment 1 that liquid crystal indicator had disposes the dyed layer 4,5,6 of redness (R), blue (B) and green (G) 3 kinds of colors on transparency carrier 1.In addition, on transparency carrier 1, disposing common electrode 2 respectively between the dyed layer 4,5,6 and on the dyed layer 4,5,6.On the common electrode 2 that is arranged between this dyed layer 4,5,6, dispose the light leak that prevents 4,5,6 of dyed layers light shield layer (black matrix: BM) 3, the dyed layer 4,5,6 of red (R), blue (B) and green (G) these 3 kinds of colors is isolated respectively by light shield layer (BM) 3.In addition, in the present embodiment, dyed layer also can use redness (R), blue (B) and green (G) dyed layer with colors such as yellow, white, dark green (cyan), magentas in addition, and the number of color of dyed layer is not defined as 3 kinds yet.
In the present embodiment, use the mechanism of stacked sept 9 as the holding unit gap.As shown in Figure 1, colored filter substrate manufactured has stacked in order green (G) the dyed layer 5a of substrate dyed layer and the structure that blueness (B) dyed layer 6a, common electrode 2 and top layer 7 form of becoming in the zone with blue (B) dyed layer 6 adjacency in the present embodiment.Top layer 7 is made of the material B M that constitutes light shield layer 3.In addition, the dyed layer that constitutes stacked sept 9 is not limited to green (G) and blue (B), also can adopt redness (R) and blue (B), or red (R) and green (G).
In the present embodiment, active-matrix substrate 8 is oppositely arranged with colored filter substrate, and is provided with liquid crystal layer 10 between colored filter substrate and active-matrix substrate 8.On active-matrix substrate 8, dispose the gate wirings, data wiring, Cs distribution of drive controlling of being used to carry out liquid crystal layer 10 etc., as the TFT of on-off element, pixel electrode etc.Gate wirings and data wiring are respectively equipped with many, and the formation matrix structure of reporting to the leadship after accomplishing a task mutually separately.In addition, the CS distribution extends the ground configuration along the direction identical with the bearing of trend of gate wirings between each gate wirings.By gate wirings and data wiring area surrounded, dispose pixel electrode across interlayer dielectric.Crossing at gate wirings and data wiring is provided with TFT, the signal that the signal controlling that utilization sends from gate wirings sends from data wiring.TFT is electrically connected by the contact hole that is arranged in the interlayer dielectric with pixel electrode.By between common electrode 2 these two electrodes of the pixel electrode of active-matrix substrate 8 and colored filter substrate, applying voltage, produce electric field in the liquid crystal layer 10, liquid crystal molecule is orientated, and the refractive index that sees through the light of liquid crystal layer 10 changes.On the face of the side opposite of colored filter substrate and active-matrix substrate 8, be respectively equipped with Polarizer, utilize the function of Polarizer and the change of refractive of above-mentioned light, the opening (on) and close (off) of control liquid crystal indicator with liquid crystal layer.
Fig. 2 is the floor map of the colored filter substrate that liquid crystal indicator had of making in embodiment 1.As shown in Figure 2, the surface configuration at colored filter substrate has dyed layer 4,5,6 of redness (R), blue (B), green (G) 3 kinds of colors and the light shield layer (BM) 3 on every side that surrounds these dyed layers 4,5,6.These dyed layers 4,5,6 are to dispose with the mode of each pixel electrode unanimity of relative active-matrix substrate 8.In the zone that forms TFT50, stretch out and be formed with the light shield layer 3 that is used to prevent the TFT50 deterioration.
In the present embodiment, disposing stacked sept 9 with the TFT50 overlapping areas.Because the top layer of stacked in the present embodiment sept 97 is formed by BM,, can realize the raising of aperture opening ratio thus so can carry out shading to the groove of TFT50 fully with less area.Particularly, as following Fig. 3 (a) and (b).Fig. 3 is a schematic cross-section of representing the stacked mode of TFT of the top layer of colored filter substrate of present embodiment and active-matrix substrate in detail.(a) mode of expression prior art, (b) mode of expression embodiment 1.Shown in Fig. 3 (a), on the transparency carrier 111 of colored filter substrate, be formed with light shield layer 113, be formed with under the situation of TFT250 on the transparency carrier 121 of active-matrix substrate, in order to prevent that exterior light 180 from shining the semiconductor portion of TFT250, because of light stimulus causes the deterioration of TFT250, prior art is with the overlapping whole zone of TFT250 the light shield layer 113 (BM) of width T1 to be set.On the other hand, as shown in this embodiment, on the transparency carrier 21 of active-matrix substrate, be formed with TFT50, the top layer 7 (BM) that is formed on dyed layer 5a, the 6a has under the situation of light-proofness, shown in Fig. 3 (b), can dispose this top layer 7 in the mode of the channel region 50a that covers TFT, therefore, even the width (area) that does not make light shield layer (top layer) more than the width of TFT, also can suppress the deterioration of the TFT50 that the light stimulus by exterior light 80 causes fully.Therefore,, the width of light shield layer can be narrowed down to T2 from T1, compared with prior art be improved the mode of aperture opening ratio according to present embodiment.
In the present embodiment, stacked sept 9 forms with blue (B) dyed layer 6 adjacency, but also can be formed on the zone of red (R) dyed layer 4 adjacency or with the zone of green (G) dyed layer 5 adjacency, as long as can keep the cell gap of colored filter substrate integral body, also can one fix on any that becomes in 3 kinds of colors of one group and form.
Below the colored filter substrate of embodiment 1 and the manufacture method of liquid crystal indicator are elaborated.Fig. 4-1~Fig. 4-the 3rd, the synoptic diagram of the manufacturing process of the colored filter substrate of expression present embodiment, each figure is the schematic cross-section of each fabrication phase of colored filter substrate.
At first, shown in Fig. 4-1, the assigned position on transparency carrier 1 is formed with redness (R) dyed layer 4, green (G) dyed layer 5 and blue (B) dyed layer 6 in order.At this moment, after become stacked sept 9 and zones blue (B) dyed layer 6 adjacency, this is two-layer as green (G) the dyed layer 5a of substrate dyed layer and blueness (B) dyed layer 6a in stacked formation.Stacked sept 9 is configured in the TFT50 overlapping areas with active-matrix substrate 8.As transparency carrier 1, can use the substrate that for example forms by glass, plastics etc. Dyed layer 4,5,6,5a, 6a can use the photoresist (colored resist (color resist)) of the pigment that contains each color etc.As the formation method of dyed layer 4,5,6,5a, 6a, preferably use the photoetching process of colored resist.
Then, shown in Fig. 4-2, form common electrode 2 at whole.As common electrode 2, for example can use ITO (indium tin oxide), IZO (indium-zinc oxide) etc. to have the metal oxide of the transparency.Common electrode 2 can use formation such as sputtering method.
Then, shown in Fig. 4-3, form light shield layer 3 and top layer 7.As their material, can use the photoresist (BM) that comprises black pigment.Light shield layer 3 and the 7 preferred use of top layer can be configured in accurately, and the photoetching process of position forms.In addition, thus, light shield layer 3 and top layer 7 can form in an operation.In the present embodiment, light shield layer 3 is arranged between each dyed layer 4,5,6.In addition, top layer 7 is arranged on green (B) chromatic colorant layer 5, blue (B) dyed layer 6 and common electrode 2 overlapping areas.
According to present embodiment, because can in an operation, form light shield layer 3 and top layer 7, so compared with prior art, can reduce manufacturing process, can reduce thus and make required (delivery cycle: lead time) time, reduce the photomask that uses, improve yield rate, reduce manufacturing cost etc.
Then, make active-matrix substrate 8.Manufacture method as active-matrix substrate 8, can be listed below method: to gate wirings, data wiring, Cs distribution, use photoetching process etc. to carry out image respectively as the TFT of switch element to form (patterning), cover these distributions etc. with interlayer dielectric after, at interlayer dielectric a part of contact hole is set, pixel electrode further is set thereon, TFT is connected with pixel electrode.The material that gate wirings, data wiring and Cs distribution for example can use aluminium (Al), silver (Ag), tantalum nitride (TaN), titanium nitride (TiN), molybdenum nitride (MoN) etc. to have light-proofness is easily made.
In addition, control in this point from the orientation of liquid crystal molecule, preferably these colored filter substrates and active-matrix substrate 8 each surface comfortable and side that liquid crystal layer 10 joins are provided with the alignment films that is made of the polyimide that makes liquid crystal molecular orientation.
Then, between colored filter substrate and active-matrix substrate 8, inject liquid crystal material, its sealing formed liquid crystal layer, further colored filter substrate and active-matrix substrate 8 separately with faces liquid crystal layer 10 opposite sides on Polarizer is set.Then, be provided with to drive and use integrated circuit (driver), if infiltration type or reflecting ﹠ transmitting two-purpose type then further are provided with backlight, finish liquid crystal indicator in addition.
(embodiment 2)
Fig. 5 is the schematic cross-section of the colored filter substrate that liquid crystal indicator had of making in embodiment 2.As shown in Figure 5, the colored filter substrate of making in embodiment 2 that liquid crystal indicator had disposes the dyed layer 14,15,16 of redness (R), blue (B) and green (G) 3 kinds of colors on transparency carrier 11.In addition, on transparency carrier 11, disposing common electrode 12 respectively between the dyed layer 14,15,16 and on the dyed layer 14,15,16.On the common electrode 12 that is arranged between this dyed layer 14,15,16, dispose the light shield layer (BM) 13 of the light leak that prevents 14,15,16 of dyed layers.
But, in embodiment 2, be with the difference of embodiment 1, parts as the stacked sept 19 that constitutes the mechanism that is used as the holding unit gap, not only comprise green (G) dyed layer 15a and blueness (B) dyed layer 16a, also comprise redness (G) dyed layer 14a, stacked sept 19 becomes the structure that is laminated with redness (G) dyed layer 14a, green (G) dyed layer 15a, blueness (B) dyed layer 16a, common electrode 12 and top layer (BM) 17 in the following order.Present embodiment is the preferable methods that is applicable to following situation, promptly, consider the thickness of top layer 17 and the thickness of liquid crystal layer 20, under the mode of the stacked sept of embodiment 1, because of the phase place inferior relation of the light that sees through makes cell gap not become the situation of optimum condition.In addition, also can carry out the optimization of cell gap by the formation that changes electrode, the additive methods such as thickness that constitute each parts of stacked sept.
Colored filter substrate manufactured and liquid crystal indicator be except that comprising redness (G) dyed layer 14a among the embodiment 2 in above-mentioned stacked sept 19, and be identical with embodiment 1.
(embodiment 3)
Fig. 6 is the floor map of the colored filter substrate that liquid crystal indicator had of making in embodiment 3.As shown in Figure 6, the dyed layer 24,25,26 of redness (R), blue (B) and green (G) 3 kinds of colors is arranged and surround the light shield layer (BM) 23 on every side of these dyed layers 24,25,26 in the surface configuration of colored filter substrate.These dyed layers 24,25,26 as one man dispose with each pixel electrode of relative active-matrix substrate.
Wherein, in embodiment 3, be with the difference of embodiment 1, comprise that the stacked sept 29 of top layer 27 is not arranged on the zone that forms TFT, and be arranged on by the dotted line of Fig. 6 maintenance electric capacity that represent and active-matrix substrate (Cs) distribution 60 overlapping areas.
In addition, among the embodiment 3 colored filter substrate manufactured and liquid crystal indicator except that stacked sept 29 be arranged on Cs distribution 60 overlapping rather than with the TFT overlapping areas, identical with embodiment 1.
(embodiment 4)
Fig. 7 is the floor map of the colored filter substrate that liquid crystal indicator had of making in embodiment 4.As shown in Figure 7, the pattern of light shield layer (BM) 33 is not the such so-called matrix pattern of embodiment 1~3, and becomes bar (stripe) pattern.Promptly, under the situation of the dyed layer of configuration same color in clipping the gate wirings adjacent pixels (red colored layer 34, green coloring layer 35 or blue-colored layer 36), do not form light shield layer (BM) 33 on this gate wirings, boundlessness ground becomes row on adjacent pixels.By adopting this mode, can improve aperture opening ratio.
Like this, become under the situation of bar pattern,, can enumerate following three kinds of modes as the allocation position of stacked sept at light shield layer (BM) 33.Fig. 7 (a)~(c) is the floor map of the colored filter substrate of the expression allocation position that makes the stacked sept of light shield layer (BM) when the bar pattern.Fig. 7 (a) is illustrated in the mode that disposes the stacked sept 39 that comprises top layer 37 with the TFT150 overlapping areas.Fig. 7 (b) is illustrated in the mode that disposes the stacked sept 39 that comprises top layer 37 with Cs distribution 160 overlapping areas.Fig. 7 (c) is illustrated in the mode that disposes the stacked sept 39 that comprises top layer 37 with gate wirings 170 overlapping areas.
These any modes all have the stacked sept 39 that comprises top layer 37 in the area configurations of having used the material with light-proofness on active-matrix substrate, therefore can not reduce aperture opening ratio ground and make colored filter substrate.
(embodiment 5)
Fig. 8 is the floor map of the colored filter substrate that liquid crystal indicator had of making in embodiment 5.As shown in Figure 8, the colored filter substrate of present embodiment has red colored layer 44, green coloring layer 45 and the blue-colored layer 46 that is separated by light shield layer 43, and all is being formed with the stacked sept 49 that comprises top layer 47 with the overlapping any zone of TFT.The stacked sept 49 of present embodiment therefore by increasing and the overlapping number of TFT like this, can be realized higher aperture opening ratio by overlapping and can realize the raising of aperture opening ratio with TFT.In addition, though the pattern table of light shield layer (BM) 43 is shown the mode of bar pattern in Fig. 8, being not particularly limited, also can be the matrix pattern shown in the embodiment 1~3.
More than embodiment 1~5 is illustrated, these embodiment can suitably make up, and with they combinations, can access optimum effect by as required.
(comparative example 1)
Fig. 9 is the schematic cross-section of the colored filter substrate that liquid crystal indicator had made in comparative example 1, and is the schematic cross-section of the colored filter substrate that has of existing liquid crystal indicator.As shown in Figure 9, the colored filter substrate that liquid crystal indicator had that comparative example 1 is made disposes the light shield layer 103 of the light leak that prevents 104,105,106 of dyed layers on transparency carrier 101, at the dyed layer 104,105,106 that is disposed redness (R), blue (B), green (G) 3 kinds of colors by light shield layer 103 area surrounded.In addition, disposing common electrode 102 respectively on the light shield layer 103 He on the dyed layer 104,105,106.
In this comparative example, use stacked sept 109 as the mechanism in holding unit gap.As shown in Figure 9, colored filter substrate manufactured is provided with stacked sept 109 in the zone with blue (B) dyed layer 106 adjacency in this comparative example.Stacked sept 109 has the structure that is laminated with light shield layer 103, green (G) dyed layer 105a, blueness (B) dyed layer 106a, common electrode 102 and top layer 107 in the following order.Common electrode 102 is made of ITO, and top layer 107 is made of transparent photoresist.In addition, relatively be provided with active-matrix substrate 108, and between colored filter substrate and active-matrix substrate 108, be provided with liquid crystal layer 110 with colored filter substrate.
Below, the colored filter substrate of comparative example 1 and the manufacture method of liquid crystal indicator are elaborated.Figure 10-1~10-4 is the synoptic diagram of manufacturing process of the colored filter substrate of this comparative example of expression, and each figure is the schematic cross-section of each fabrication phase of colored filter substrate.
At first, shown in Figure 10-1, on transparency carrier 101, use the dry film method to form the light shield layer (BM) 103 of the light leak that prevents 104,105,106 of dyed layers.Then, shown in Figure 10-2, between BM103, form red (R) dyed layer 104, green (G) dyed layer 105 and blue (B) dyed layer 106 in order.At this moment, after become stacked sept 109 and zones blue (B) dyed layer 106 adjacency, stacked formation green (G) dyed layer 105a and blueness (B) dyed layer 106a.Then, shown in Figure 10-3, use sputtering method on whole, to form common electrode 102.Then, shown in Figure 10-4, use the dry film method to go up and form top layer 107 at blueness (B) the dyed layer 106a that constitutes stacked sept 109.
Manufacture method shown in manufacture method shown in the embodiment 1 and the comparative example 1 is compared as can be known, and the manufacture method of comparative example 1 is more than the manufacturing process of the manufacture method of embodiment 1.Therefore, according to embodiment 1~5, compared with prior art, can reduce and make required (delivery cycle: lead time) time, reduce the photomask that uses, improve yield rate, reduce manufacturing cost, further, can realize the raising of aperture opening ratio, obtain the higher liquid crystal indicator of brightness.
In addition, the application is based on the patented claim 2007-154125 of Japan number of proposing on June 11st, 2007, according to Treaty of Paris or the rules opinion right of priority that enters this state in national stage.As reference, introduce the full content of this application.

Claims (12)

1. the manufacture method of a colored filter substrate, this colored filter substrate substrate is provided with dyed layer, electrode, light shield layer and stacked sept, and the manufacture method of this colored filter substrate is characterised in that:
This manufacture method is carried out following operation:
Form the operation of the substrate dyed layer of dyed layer and stacked sept;
Form the operation of electrode; And
Form the operation of the top layer of light shield layer and stacked sept.
2. the manufacture method of a liquid crystal indicator is characterized in that:
Between colored filter substrate that utilizes the described manufacture method manufacturing of claim 1 and active-matrix substrate, liquid crystal layer is set.
3. the manufacture method of liquid crystal indicator as claimed in claim 2 is characterized in that:
Described stacked sept is to form with the overlapping mode of the thin film transistor (TFT) of active-matrix substrate.
4. the manufacture method of liquid crystal indicator as claimed in claim 2 is characterized in that:
Described stacked sept is to form with the overlapping mode of the light shielding part of active-matrix substrate.
5. the manufacture method of liquid crystal indicator as claimed in claim 4 is characterized in that:
Described light shielding part is for keeping capacitance wiring.
6. the manufacture method of liquid crystal indicator as claimed in claim 4 is characterized in that:
Described light shielding part is a gate wirings.
7. colored filter substrate, its substrate is provided with dyed layer, electrode, light shield layer and stacked sept, and this colored filter substrate is characterised in that:
This stacked sept has the structure that is formed with the top layer on the substrate dyed layer,
This top layer is made of the material that constitutes light shield layer.
8. a liquid crystal indicator is characterized in that, comprising:
The described colored filter substrate of claim 7;
Active-matrix substrate; With
Be arranged on the liquid crystal layer between them.
9. liquid crystal indicator as claimed in claim 8 is characterized in that:
The thin film transistor (TFT) of described stacked sept and active-matrix substrate is overlapping.
10. liquid crystal indicator as claimed in claim 8 is characterized in that:
The light shielding part of described stacked sept and active-matrix substrate is overlapping.
11. liquid crystal indicator as claimed in claim 10 is characterized in that:
Described light shielding part is for keeping capacitance wiring.
12. liquid crystal indicator as claimed in claim 10 is characterized in that:
Described light shielding part is a gate wirings.
CN2008800145658A 2007-06-11 2008-04-24 Method of manufacturing color filter substrate, method of manufacturing liquid crystal display device, color filter substrate, and liquid crystal display device Expired - Fee Related CN101675377B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP154125/2007 2007-06-11
JP2007154125 2007-06-11
PCT/JP2008/057929 WO2008152864A1 (en) 2007-06-11 2008-04-24 Method of manufacturing color filter substrate, method of manufacturing liquid crystal display device, color filter substrate, and liquid crystal display device

Publications (2)

Publication Number Publication Date
CN101675377A true CN101675377A (en) 2010-03-17
CN101675377B CN101675377B (en) 2012-05-09

Family

ID=40129477

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800145658A Expired - Fee Related CN101675377B (en) 2007-06-11 2008-04-24 Method of manufacturing color filter substrate, method of manufacturing liquid crystal display device, color filter substrate, and liquid crystal display device

Country Status (3)

Country Link
US (1) US8310628B2 (en)
CN (1) CN101675377B (en)
WO (1) WO2008152864A1 (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103149745A (en) * 2013-02-20 2013-06-12 北京京东方光电科技有限公司 Spacer manufacturing method on substrate
CN103676294A (en) * 2013-12-03 2014-03-26 京东方科技集团股份有限公司 Substrate, manufacture method of substrate, and display device comprising substrate
CN104166265A (en) * 2014-06-16 2014-11-26 京东方科技集团股份有限公司 Color filter substrate, manufacturing method for color filter substrate, organic light-emitting display panel and display device
CN104516157A (en) * 2015-01-04 2015-04-15 京东方科技集团股份有限公司 Liquid crystal panel and display device
CN104637980A (en) * 2013-11-11 2015-05-20 财团法人工业技术研究院 Color filter substrate and display panel
CN105824148A (en) * 2016-05-30 2016-08-03 京东方科技集团股份有限公司 Method for manufacturing color film substrate, color film substrate and relevant device
CN106094317A (en) * 2015-04-30 2016-11-09 三星显示有限公司 Display floater
WO2017041312A1 (en) * 2015-09-09 2017-03-16 深圳市华星光电技术有限公司 Color filter array and manufacturing method thereof
CN104122695B (en) * 2013-07-19 2017-07-07 深超光电(深圳)有限公司 The manufacture method of array base palte and array base palte for liquid crystal display panel
WO2017117835A1 (en) * 2016-01-05 2017-07-13 深圳市华星光电技术有限公司 Liquid crystal display panel, and array substrate and method for manufacturing same
CN107884997A (en) * 2016-09-29 2018-04-06 三星显示有限公司 Display device
CN109270732A (en) * 2018-11-13 2019-01-25 成都中电熊猫显示科技有限公司 A kind of display panel and display device
CN110300917A (en) * 2017-02-15 2019-10-01 夏普株式会社 The liquid crystal display device and head-mounted display of head-mounted display
CN110707138A (en) * 2019-10-31 2020-01-17 深圳市华星光电半导体显示技术有限公司 OLED display panel and manufacturing method thereof
WO2020042231A1 (en) * 2018-08-31 2020-03-05 武汉华星光电技术有限公司 Color filter substrate and display panel
WO2020051989A1 (en) * 2018-09-13 2020-03-19 惠科股份有限公司 Color filter and manufacturing method thereof, and display panel

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8558976B2 (en) * 2009-10-15 2013-10-15 Sharp Kabushiki Kaisha Color filter substrate and liquid crystal display device
KR101620534B1 (en) * 2010-01-29 2016-05-13 삼성디스플레이 주식회사 Liquid crystal display
KR101642346B1 (en) * 2010-08-06 2016-07-26 삼성디스플레이 주식회사 Display substrate and display device comprising the same
KR101760849B1 (en) 2011-03-04 2017-07-25 삼성디스플레이 주식회사 Liquid crystal display
CN103091905A (en) * 2011-10-31 2013-05-08 京东方科技集团股份有限公司 Color film substrate and manufacturing method thereof
US9030767B2 (en) * 2012-05-11 2015-05-12 Shenzhen China Star Optoelectronics Technology Co Ltd. Color filter and manufacturing method thereof
CN103268037B (en) * 2013-05-15 2015-07-29 京东方科技集团股份有限公司 A kind of color membrane substrates, preparation method and display device
KR20140147299A (en) * 2013-06-19 2014-12-30 삼성디스플레이 주식회사 Curved display device and manufacturing method thereof
CN104375320B (en) * 2014-12-04 2017-08-29 合肥鑫晟光电科技有限公司 A kind of display base plate and preparation method thereof, display panel and display device
CN104777667A (en) * 2015-04-30 2015-07-15 武汉华星光电技术有限公司 Display panel and display device
TWI564597B (en) * 2015-05-29 2017-01-01 鴻海精密工業股份有限公司 Color filter substrate and manufacturing method thereof
CN105676551B (en) * 2016-04-13 2019-03-22 深圳市华星光电技术有限公司 A kind of liquid crystal display panel and liquid crystal display
CN107065319B (en) * 2017-05-26 2020-06-12 厦门天马微电子有限公司 Liquid crystal display panel and display device
CN106990603B (en) * 2017-06-08 2020-04-17 惠科股份有限公司 Display panel and display device using same
US10782571B2 (en) * 2017-12-29 2020-09-22 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. COA-type array substrate
TWI669556B (en) * 2018-06-29 2019-08-21 友達光電股份有限公司 Display panel
CN109407389B (en) * 2018-11-26 2021-10-08 惠科股份有限公司 Display panel and manufacturing method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3014291B2 (en) 1995-03-10 2000-02-28 インターナショナル・ビジネス・マシーンズ・コーポレイション Liquid crystal display panel, liquid crystal display device, and method of manufacturing liquid crystal display panel
JP3949759B2 (en) * 1996-10-29 2007-07-25 東芝電子エンジニアリング株式会社 Color filter substrate and liquid crystal display element
JPH11311786A (en) * 1998-02-27 1999-11-09 Sharp Corp Liquid crystal display device and its manufacture
JP2002023170A (en) 2000-07-04 2002-01-23 Toppan Printing Co Ltd Liquid crystal display device
JP2002258267A (en) 2000-12-26 2002-09-11 Toray Ind Inc Color filter and liquid crystal display using the same
JP4041336B2 (en) * 2001-06-29 2008-01-30 シャープ株式会社 Substrate for liquid crystal display device, liquid crystal display device including the same, and manufacturing method thereof
JP4057816B2 (en) 2002-01-31 2008-03-05 東芝松下ディスプレイテクノロジー株式会社 Liquid crystal display
JP2003228085A (en) 2002-02-06 2003-08-15 Matsushita Electric Ind Co Ltd Liquid crystal display and its manufacturing method
JP3892841B2 (en) 2003-10-27 2007-03-14 株式会社 日立ディスプレイズ Liquid crystal display
US7433004B2 (en) 2004-06-11 2008-10-07 Sharp Kabushiki Kaisha Color filter substrate, method of making the color filter substrate and display device including the color filter substrate
JP4134106B2 (en) 2004-06-11 2008-08-13 シャープ株式会社 Color filter substrate, manufacturing method thereof, and display device including the same
JP2006267524A (en) * 2005-03-24 2006-10-05 Sharp Corp Liquid crystal panel, liquid crystal display device, and manufacturing method for liquid crystal panel
KR101231867B1 (en) * 2006-02-23 2013-02-08 삼성디스플레이 주식회사 Liquid Crystal Display Apparatus

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103149745B (en) * 2013-02-20 2016-05-18 北京京东方光电科技有限公司 Chock insulator matter manufacture method on substrate
CN103149745A (en) * 2013-02-20 2013-06-12 北京京东方光电科技有限公司 Spacer manufacturing method on substrate
CN104122695B (en) * 2013-07-19 2017-07-07 深超光电(深圳)有限公司 The manufacture method of array base palte and array base palte for liquid crystal display panel
CN104637980B (en) * 2013-11-11 2017-09-15 财团法人工业技术研究院 Color filter substrate and display panel
CN104637980A (en) * 2013-11-11 2015-05-20 财团法人工业技术研究院 Color filter substrate and display panel
CN103676294A (en) * 2013-12-03 2014-03-26 京东方科技集团股份有限公司 Substrate, manufacture method of substrate, and display device comprising substrate
WO2015081675A1 (en) * 2013-12-03 2015-06-11 京东方科技集团股份有限公司 Substrate, manufacturing method thereof, and display device
CN103676294B (en) * 2013-12-03 2016-02-03 京东方科技集团股份有限公司 Substrate and preparation method thereof, display device
CN104166265A (en) * 2014-06-16 2014-11-26 京东方科技集团股份有限公司 Color filter substrate, manufacturing method for color filter substrate, organic light-emitting display panel and display device
US10263049B2 (en) 2014-06-16 2019-04-16 Boe Technology Group Co., Ltd. Color filter substrate and method of manufacturing the same, organic light emitting display panel and display device
CN104516157A (en) * 2015-01-04 2015-04-15 京东方科技集团股份有限公司 Liquid crystal panel and display device
CN106094317A (en) * 2015-04-30 2016-11-09 三星显示有限公司 Display floater
WO2017041312A1 (en) * 2015-09-09 2017-03-16 深圳市华星光电技术有限公司 Color filter array and manufacturing method thereof
WO2017117835A1 (en) * 2016-01-05 2017-07-13 深圳市华星光电技术有限公司 Liquid crystal display panel, and array substrate and method for manufacturing same
CN105824148A (en) * 2016-05-30 2016-08-03 京东方科技集团股份有限公司 Method for manufacturing color film substrate, color film substrate and relevant device
CN105824148B (en) * 2016-05-30 2019-07-02 京东方科技集团股份有限公司 A kind of preparation method of color membrane substrates, color membrane substrates and relevant apparatus
CN107884997A (en) * 2016-09-29 2018-04-06 三星显示有限公司 Display device
CN110300917A (en) * 2017-02-15 2019-10-01 夏普株式会社 The liquid crystal display device and head-mounted display of head-mounted display
WO2020042231A1 (en) * 2018-08-31 2020-03-05 武汉华星光电技术有限公司 Color filter substrate and display panel
WO2020051989A1 (en) * 2018-09-13 2020-03-19 惠科股份有限公司 Color filter and manufacturing method thereof, and display panel
CN109270732A (en) * 2018-11-13 2019-01-25 成都中电熊猫显示科技有限公司 A kind of display panel and display device
CN110707138A (en) * 2019-10-31 2020-01-17 深圳市华星光电半导体显示技术有限公司 OLED display panel and manufacturing method thereof

Also Published As

Publication number Publication date
US8310628B2 (en) 2012-11-13
CN101675377B (en) 2012-05-09
US20100165266A1 (en) 2010-07-01
WO2008152864A1 (en) 2008-12-18

Similar Documents

Publication Publication Date Title
CN101675377B (en) Method of manufacturing color filter substrate, method of manufacturing liquid crystal display device, color filter substrate, and liquid crystal display device
US10261358B2 (en) Liquid crystal display panel and manufacturing method thereof
US7403253B2 (en) Plane switching mode liquid crystal display device having storage lines overlapping gate line and common line, and fabrication method thereof
US8059233B2 (en) Liquid crystal display device
US7859616B2 (en) Liquid crystal display apparatus
US10013938B2 (en) Display panel and display device, and fabrication method thereof
CN103975270B (en) Active-matrix substrate and the display panels possessing it
US8531641B2 (en) Liquid crystal display device and method of manufacturing the same
US9740039B2 (en) Display device
KR20120034978A (en) Display substrate and display device comprising the same
US8698152B2 (en) Display panel and thin film transistor substrate
US10281761B2 (en) Liquid crystal display device
US20120287363A1 (en) Liquid crystal display device, color-filter substrate, thin-film-transistor substrate and manufacturing method thereof
WO2010103676A1 (en) Active matrix substrate, display panel, display device, and electronic device
KR20150086821A (en) Liquid crystal display and manufacturing method thereof
WO2004017129A1 (en) Pixel array for display device and liquid crystal display
US9792880B2 (en) Display device
US9244306B2 (en) Color filter substrate, display panel and method for producing color filter substrate
KR20150002910A (en) Diode display device including touch panel
US7023507B2 (en) Color filter having a conductive segment on an insulating segment, the conductive segment configured to electrically connect an electrode layer at opposite sides of the insulating segment
KR20060057196A (en) Liquid crystal display panel and method of manufacturing for the same
KR20070001713A (en) Liquid crystal display device and method of fabricating thereof
KR20060080393A (en) Liquid crystal display panel and manufacturing method of the same
KR20060023373A (en) Liquid crystal display panel and method for manufacturing the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120509

Termination date: 20200424