CN103137568B - Package substrate with support and method for fabricating the same - Google Patents
Package substrate with support and method for fabricating the same Download PDFInfo
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- CN103137568B CN103137568B CN201210127399.0A CN201210127399A CN103137568B CN 103137568 B CN103137568 B CN 103137568B CN 201210127399 A CN201210127399 A CN 201210127399A CN 103137568 B CN103137568 B CN 103137568B
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- layer
- base plate
- packaging
- metal
- copper
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 title abstract description 11
- 239000010410 layer Substances 0.000 claims description 241
- 238000004806 packaging method and process Methods 0.000 claims description 85
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 80
- 229910052802 copper Inorganic materials 0.000 claims description 76
- 239000010949 copper Substances 0.000 claims description 76
- 239000011241 protective layer Substances 0.000 claims description 44
- 238000002360 preparation method Methods 0.000 claims description 32
- 230000003014 reinforcing effect Effects 0.000 claims description 24
- 238000005538 encapsulation Methods 0.000 claims description 17
- 238000010276 construction Methods 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000011889 copper foil Substances 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000005253 cladding Methods 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 16
- 230000008569 process Effects 0.000 abstract description 5
- 238000007747 plating Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000000084 colloidal system Substances 0.000 description 6
- 238000012856 packing Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 206010008190 Cerebrovascular accident Diseases 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 208000006011 Stroke Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Abstract
A package substrate with supporting bodies and its making method, the making method forms multiple electric contact pads on two opposite sides of a supporting structure, then separates the supporting structure into two supporting bodies to form two package substrates with the supporting bodies, so that two batches of package substrates can be made by one process for use in the following package process, thus able to raise production efficiency and reduce making cost.
Description
Technical field
The present invention relates to a kind of base plate for packaging, espespecially a kind of base plate for packaging with supporter and its preparation method.
Background technology
With flourishing for electronic industry, electronic product is also gradually marched toward multi-functional, high performance trend, and while is stepped
To the development of miniaturization (miniaturization).Currently used for the support plate kind apoplexy due to endogenous wind for carrying chip, with lead frame (lead
Frame) as chip bearing member quasiconductor sealing kenel and species it is various, such as existing quadrangular plan encapsulating structure
(Quad Flat package, QFP).Therefore, it is flat without lead foot (Quad Flat Non- that a kind of four new sides have been developed then
Leaded, QFN) encapsulating structure, to reduce the size of encapsulating structure.
Figure 1A to Fig. 1 F is referred to, it is the generalized section of the preparation method of existing QFN encapsulating structures 1.
As shown in Figure 1A, layers of copper 11 is formed on a support plate 10.
As shown in Figure 1B, in the layers of copper 11 patterned microetch forming multiple electric contact mats 12 and put brilliant pad 13.
As shown in Figure 1 C, formed on brilliant pad 13 surface-treated layer 14, the surface treatment with putting in those electric contact mats 12
Layer 14 is made up of nickel dam (Tu Zhong lower floors) with layer gold (figure is at the middle and upper levels).
As shown in figure ip, those electric contact mats 12 are removed and layers of copper 11 unnecessary around brilliant pad 13 is put, forms encapsulation
Substrate 1a.
As referring to figure 1e, put and carry on brilliant pad 13 chip 17 and be electrically connected with that those are in electrical contact by bonding wire 170 in this
Pad 12, re-forms packing colloid 18 on the support plate 10, to coat those electric contact mats 12, put brilliant pad 13, chip 17 with weldering
Line 170.
As shown in fig. 1f, the support plate 10 is removed, to expose outside the bottom and the bottom for putting brilliant pad 13 of those electric contact mats 12
Portion.
Only, the preparation method of existing QFN encapsulating structures 1, is only capable of forming those on the wherein side of the support plate 10 in electrical contact
Pad 12 with put brilliant pad 13, so first procedure is only capable of producing a collection of base plate for packaging 1a, use for encapsulation procedure, cause production effect
Rate is not good, and is difficult to reduce cost of manufacture.
On the other hand, in using base plate for packaging as the encapsulating structure of chip bearing member, the base plate for packaging can be divided into hard material
With soft material, the base plate for packaging for being generally used for ball grid array packages (Ball Grid Array, BGA) is more options hard material.
Figure 1A ' to Fig. 1 E ' are referred to, it is the generalized section of existing encapsulating structure 1 '.
As shown in Figure 1A, first, there is provided one has the sandwich layer 13 ' of relative first surface 13a and second surface 13b, should
First and second surface 13a of sandwich layer 13 ', has respectively layers of copper 11a, 11b on 13b.
As shown in Figure 1B, multiple through holes 130 are formed with laser on the second surface 13b of the sandwich layer 13 ', with make this
Layers of copper 11a of one surface 13a exposes to those through holes 130.
As shown in Figure 1 C, layers of copper 11a is patterned, 11b carries out plating copper material using conductive layer 10 ', with the sandwich layer
13 ' first and second surface 13a, forms respectively first and second line layer 12a, 12b on 13b, and in those through holes 130
It is middle formation conductive through hole 120 to be electrically connected with first and second line layer 12a, 12b, and first and second line layer 12a,
12b has respectively multiple first and second electric contact mat 120a, 120b.
As shown in figure ip, in first and second surface 13a of the sandwich layer 13 ', an insulating protective layer is formed on 13b respectively
16, and fill up the conductive through hole 120.The insulating protective layer 16 has multiple perforates 160, and to make those, first and second is electrically connected with
Touch pad 120a, 120b correspondences expose to the respectively perforate 160, to make base plate for packaging 1a '.Then, in those first and second
Surface-treated layer 14 is formed on the exposed surface of electric contact mat 120a, 120b.
As referring to figure 1e, carry on the insulating protective layer 16 chip 17 and by multiple bonding wires 170 be electrically connected with this
Two electric contact mat 120b, re-form packing colloid 18 to coat the chip 17 and bonding wire 170, and first in electrical contact in those
Plant on pad 120a and connect soldered ball 19, to make encapsulating structure 1 '.In order to meet the demand of microminiaturization and reliability, in current processing procedure skill
In art, the thickness of the sandwich layer 13 ' can be contracted to 60um.
Only, with the increase in demand of microminiaturization, thickness cannot meet the microminiaturization need of packaging part for the sandwich layer 13 ' of 60um
Ask, if but make the thickness of the sandwich layer 13 ' less than 60um, total thickness of slab R of base plate for packaging 1a ' will cause production to be made less than 130um
Industry is not good, for example：Base plate for packaging 1a ' easy clamps when moving in each process operations station, and it is unfavorable for production, even and if
Can produce, also easily prying or the rupture because thickness is too thin in transport or encapsulation, lead to not use or product is bad.
Therefore, the variety of problems of above-mentioned prior art how is overcome, it is real into the problem for desiring most ardently solution at present.
The content of the invention
In view of the disadvantages of above-mentioned prior art, present invention is primarily targeted at disclosing a kind of envelope with supporter
Dress substrate and its preparation method, can improving production efficiency, to reduce cost of manufacture.
The preparation method of the base plate for packaging with supporter of the present invention, including：Two copper clad laminate pieces are mutually folded with its layers of copper
Put；Reinforcing plate body is combined on the two copper clad laminates piece to form supporting construction；Multiple being electrically connected with is formed on the reinforcing plate body
Touch pad；And cut along the side of the two copper clad laminates piece, make the superposed layers of copper of the two copper clad laminates piece separate, make
The supporting construction is separated into two supporters, to obtain two base plate for packaging with the supporter.
The present invention also provides a kind of base plate for packaging with supporter, including：Copper clad laminate piece, it is incorporated into the copper clad laminate
With the reinforcing plate body for forming supporter and the multiple electric contact mats being formed on the reinforcing plate body on piece.
In the aforesaid base plate for packaging with supporter and its preparation method, the first metal-stripping layer is combined for physically should
Second metal-stripping layer.
The aforesaid base plate for packaging with supporter and its preparation method, it may include surface treatment is formed on the electric contact mat
Layer.
The aforesaid base plate for packaging with supporter and its preparation method, it may include when those electric contact mats are formed, in the lump
Formed on the second metal-stripping layer and put brilliant pad.Or, form increasing layer on the second metal-stripping layer and electric contact mat
Brilliant pad is put in structure, the outermost layer formation for making the layer reinforced structure.
In addition, the aforesaid base plate for packaging with supporter and its preparation method, before being cut, it may include in this second
The first insulating protective layer is formed on metal-stripping layer, and the first perforate is formed with first insulating protective layer, with make this
The part surface of two metal-stripping layers exposes to first perforate；Being formed on the second metal-stripping layer in first perforate should
A little electric contact mats；Layer reinforced structure is formed on first insulating protective layer and those electric contact mats, the layer reinforced structure has
Multiple electric connection pads；And form the second insulating protective layer, and the shape on second insulating protective layer on the layer reinforced structure
Into the second perforate, to make those electric connection pads expose to second perforate.May also include in formed second perforate after, in
Surface-treated layer is formed on electric connection pad in second perforate.
From the foregoing, it will be observed that the base plate for packaging with supporter and its preparation method of the present invention, by the two copper clad laminates piece
With reference to reinforcing plate body to form supporting construction, so the electric contact mat can be made in the supporting construction both sides, to form two tools
There is the base plate for packaging of the supporter, so first procedure can produce two batches base plate for packaging, use for encapsulation procedure.Therefore, phase
Compared with the production capacity of prior art, the preparation method of the present invention can improving production efficiency, to reduce cost of manufacture.
Additionally, by the thickness of the supporter, making the integral thickness of the base plate for packaging can be more than or equal to 130um, so
As not good problem such as production operation of the prior art can be avoided.
Also, the base plate for packaging of the present invention is deducted after the thickness of the supporter, the gross thickness of other structures will significantly reduce,
So in follow-up encapsulation procedure, after the supporter is removed, the thickness of encapsulating structure can be greatly reduced, to meet microminiaturization
Demand.
Description of the drawings
Figure 1A to Fig. 1 F is the cross-sectional schematic of the preparation method of existing QFN encapsulating structures；
Figure 1A ' to Fig. 1 E ' are the cross-sectional schematic of the preparation method of existing encapsulating structure；
Fig. 2A to Fig. 2 D is that the section view of the first embodiment of the preparation method of the base plate for packaging with supporter of the present invention is illustrated
Figure；Wherein, Fig. 2 C ' to Fig. 2 D ' for Fig. 2 C to Fig. 2 D another example, Fig. 2 C " for Fig. 2 C ' another embodiment；
Fig. 3 A to Fig. 3 D are the follow-up preparation method of the first embodiment of the base plate for packaging with supporter using the present invention
Cross-sectional schematic；And
Fig. 4 is another of the first embodiment of the follow-up preparation method of the base plate for packaging with supporter using the present invention
Cross-sectional schematic.
Fig. 5 A to Fig. 5 D are that the section view of the second embodiment of the preparation method of the base plate for packaging with supporter of the present invention is illustrated
Figure；And
Fig. 6 A to Fig. 6 B are the follow-up preparation method of the second embodiment of the base plate for packaging with supporter using the present invention
Cross-sectional schematic.
Primary clustering symbol description
1,1,3,3 ', 3 " encapsulating structure
1a, 1a ', 2,2 ', 2 " base plate for packaging
10 support plates
10 ' conductive layers
11,11a, 11b, 201,202 layers of copper
12,22,22 ' electric contact mats
12a first line layers
The line layers of 12b second
120 conductive through holes
The electric contact mats of 120a first
The electric contact mats of 120b second
13,23,23 ', 253 brilliant pads
13 ' sandwich layers
13a first surfaces
13b second surfaces
130 through holes
14,24 surface-treated layers
16 insulating protective layers
160 perforates
17,27 chips
170,270 bonding wires
18,28 packing colloids
2a encapsulation units
2b supporting constructions
2c supporters
20 copper clad laminate pieces
200 insulating barriers
21 reinforcing plate bodys
210 dielectric layers
211 first metal-stripping layers
212 second metal-stripping layers
25 layer reinforced structures
250 increasing layer dielectric layers
251 line layers
252 conductive blind holes
254 electric connection pads
The insulating protective layers of 26a first
The perforates of 260a first
The insulating protective layers of 26b second
The perforates of 260b second
29 soldered balls
L, S line of cut.
Specific embodiment
Hereinafter embodiments of the present invention are illustrated by particular specific embodiment, those skilled in the art can be by this explanation
Content disclosed in book understands easily the further advantage and effect of the present invention.
It should be clear that structure, ratio, size depicted in this specification institute accompanying drawings etc., only to coordinate description to be taken off
The content shown, for understanding and the reading of those skilled in the art, is not limited to enforceable qualificationss of the invention, institute
Not have technical essential meaning, the modification of any structure, the change of proportionate relationship or the adjustment of size are not affecting this
Under bright effect that can be generated and the purpose to be reached, all should still fall obtain what is can covered in disclosed technology contents
In the range of.Meanwhile, in this specification it is cited such as " on ", D score, " side " and " one " term, be also only and be easy to what is described
Understand, and be not used to limit enforceable scope of the invention, its relativeness is altered or modified, in without substantive change technology
Hold, when being also considered as enforceable category of the invention.
Fig. 2A to Fig. 2 D is referred to, it is the first enforcement of the preparation method of the base plate for packaging 2 with supporter 2c of the present invention
The cross-sectional schematic of example.
As shown in Figure 2 A, first, there is provided two copper clad laminate pieces (Copper clad laminate, CCL) 20 and two are strengthened
Plate body 21, respectively the copper clad laminate piece 20, should with insulating barrier 200 and the layers of copper 201,202 located at the opposite sides of insulating barrier 200
Two copper clad laminate pieces 20 are superposed with a wherein layers of copper 201, and respectively the reinforcing plate body 21 have dielectric layer 210, located at Jie
The first metal-stripping layer 211 in electric layer 210 and the second metal-stripping layer 212 on the first metal-stripping layer 211.
Then, press the dielectric layer 210 of the reinforcing plate body 21 respectively on the two copper clad laminates piece 20, make two dielectric layer
210 are integrated to coat the two copper clad laminates piece 20, and fix the two copper clad laminates piece 20, to form supporting construction 2b.
In the present embodiment, the material of the insulating barrier 200 may be, for example, double maleic acid vinegar imines/tri- nitrogen traps
(Bismaleimide triazine, abbreviation BT).However, various about the species of copper clad laminate piece 20 and ripe for industry
Know, so repeating no more.
Additionally, the material of the dielectric layer 210 may be, for example, prepreg (prepreg, abbreviation PP), and the dielectric layer 210
Thickness may be, for example, 100 μm, and the first metal-stripping layer 211 and the second metal-stripping layer 212 are copper material, and both thickness
Degree can be 18 μm and 3 μm.
Also, the first metal-stripping layer 211 combines for physically the second metal-stripping layer 212, and the physics mode
For between engaging, electrostatic, absorption or adhesion etc., namely the first metal-stripping layer 211 and the second metal-stripping layer 212 simultaneously
Etch separates need not be borrowed.
As shown in Figure 2 B, patterned processing procedure, formed on the second metal-stripping layer 212 multiple electric contact mats 22 with
Put brilliant pad 23.
However, such as etching, plating various about the method for patterning process, and known to industry, so no longer going to live in the household of one's in-laws on getting married
State.
As shown in Figure 2 C, surface-treated layer 24 is formed on those electric contact mats 22.In the present embodiment, the table is formed
The material of face process layer 24 is that ni au (Ni/Au), NiPdAu (Ni/Pd/Au) or gold etc. are selected, and its generation type can be change
The mode such as plating or plating, if being formed with changing plating mode, the material of the surface-treated layer 24 is change ni au (Ni/Au), changes nickel palladium
Golden (Electroless Nickel/Electroless Palladium/Immersion Gold, ENEPIG) or directly soak gold
(Direct Immersion Gold, DIG).Or, and with plating and plating mode is changed, i.e., be with the second metal-stripping layer 212
Conducting path, forms the surface-treated layer 24 of such as electronickelling/change plating palladium/plating gold.
Such as Fig. 2 C ' and Fig. 2 C " shown in, first can not be formed yet and put brilliant pad 23, and prior to the second metal-stripping layer 212 and electricity
Property engagement pad 22 on formed layer reinforced structure 25, re-form the surface-treated layer 24.
Wherein, the layer reinforced structure 25 includes an at least increasing layer dielectric layer 250, the line on the respectively increasing layer dielectric layer 250
Road floor 251 and the conductive blind hole 252 in the respectively increasing layer dielectric layer 250, the conductive blind hole 252 is electrically connected with the line layer
251 with electric contact mat 22, and outermost line layer 251 have put brilliant pad 253 and multiple electric connection pads 254, with this
Surface-treated layer 24 is formed on a little electric connection pads 254.
Additionally, the layer reinforced structure 25 can be one layer (as shown in Fig. 2 C ') or multilamellar (such as Fig. 2 C " shown in three layers).
Also, base plate for packaging of the present invention be used for QFN encapsulating structures in, so be not required to the second metal-stripping layer 212 in Fig. 2 C,
Or Fig. 2 C ' and Fig. 2 C " layer reinforced structure 25 on form insulating protective layer.
As shown in Fig. 2 D and Fig. 2 D ', the side along the two copper clad laminates piece 20 is cut, shown in such as Fig. 2 C and Fig. 2 C '
Line of cut L, make the superposed layers of copper 201 of the two copper clad laminates piece 20 separate automatically, make supporting construction 2b be separated into two
Supporter 2c, to isolate the base plate for packaging 2,2 ' with supporter 2c of upper and lower side.
The preparation method of the base plate for packaging 2,2 ' with supporter 2c of the present invention, mainly by the two copper clad laminates piece 20
With reference to reinforcing plate body 21 to form supporting construction 2b, so can be in the upper and lower both sides of supporting construction 2b while making this puts brilliant pad
23 with electric contact mat 22, then supporting construction 2b is separated into into two supporter 2c, to form two envelopes with supporter 2c
Dress substrate 2,2 '.Therefore, first procedure can produce two batches base plate for packaging 2,2 ', use for follow-up encapsulation procedure.
Fig. 3 A to Fig. 3 D are referred to, it is using the follow-up encapsulation system of the base plate for packaging 2 with supporter 2c of the present invention
The cross-sectional schematic of journey.In the present embodiment, it is packaged with the base plate for packaging 2 of 2D figures, the base plate for packaging 2 has multiple
Encapsulation unit 2a, as shown in Figure 3 C.
As shown in Figure 3A, the processing procedure of hookup 2D, is packaged processing procedure, and in this setting chip 27 on brilliant pad 23 is put, and makes
Those electric contact mats 22 are electrically connected with the chip 27 by bonding wire 270；Then, the shape on the reinforcing plate body 21 of supporter 2c
Into packing colloid 28, to coat the electric contact mat 22, put brilliant pad 23, chip 27 and bonding wire 270.
As shown in Figure 3 B, the first metal-stripping layer 211 and the second metal-stripping layer 212 are separated, to remove the Copper Foil base
Plate 20, the metal-stripping layer 211 of dielectric layer 210 and first, and expose outside the second metal-stripping layer 212.
In the present embodiment, because the first metal-stripping layer 211 combines for physically the second metal-stripping layer 212,
So when separating the first metal-stripping layer 211 and the second metal-stripping layer 212, it is only necessary to carried out point with the physics mode such as peeled off
From.
As shown in Figure 3 C, remove the second metal-stripping layer 212 by etching mode, and in the lump microetch those be electrically connected with
The section bottom of touch pad 22 and the section bottom for putting brilliant pad 23, to expose outside those bottoms of electric contact mat 22 ' and put brilliant pad 23 '
Bottom.
As shown in Figure 3 D, cut along each encapsulation unit 2a, line of cut S as shown in Figure 3 C, to obtain multiple envelopes
Assembling structure 3, and soldered ball 29 is combined on the bottom of electric contact mat 22 '.
Fig. 4 is referred to, it is cuing open for the follow-up encapsulation procedure of the base plate for packaging 2 ' with supporter 2c using the present invention
Depending on schematic diagram.In the present embodiment, it is packaged with the base plate for packaging 2 ' of Fig. 2 D ', and the detailed step of encapsulation procedure can join
Examine Fig. 3 A to Fig. 3 D.
As shown in figure 4, putting setting chip 27 on brilliant pad 253 in the layer reinforced structure 25, and make those electric connection pads 254
The chip 27 is electrically connected with by bonding wire 270；Then, packing colloid 28 is formed, to coat the electric connection pad 254, put brilliant pad
253rd, chip 27 and bonding wire 270.
Finally, the copper clad laminate piece 20 and reinforcing plate body 21 are removed, then is cut and is planted soldered ball 29, it is multiple to obtain
Encapsulating structure 3 '.
Refer to Fig. 5 A to Fig. 5 D, its be the present invention the base plate for packaging 2 with supporter 2c " preparation method second enforcement
The cross-sectional schematic of example.The present embodiment is to set up insulating protective layer with the difference of first embodiment, and other related process are big
Cause is identical, so repeating no more.
As shown in Figure 5A, one first insulating protective layer 26a is formed on the second metal-stripping layer 212, and by laser
Or the mode of lithography is formed with multiple first perforate 260a in first insulating protective layer 26a, and make second metal
The part surface of peel ply 212 exposes to those first perforates 260a.
Then, by the first insulating protective layer 26a as patterning resistance layer, and it is with the second metal-stripping layer 212
Conducting path, plating on the second metal-stripping layer 212 in first perforate 260a forms multiple electric contact mats 22.
As shown in Figure 5 B, layer reinforced structure 25 is formed on the first insulating protective layer 26a and those electric contact mats 22.Should
Layer reinforced structure 25 is comprising an at least increasing layer dielectric layer 250, the line layer 251 on the respectively increasing layer dielectric layer 250 and located at each
Conductive blind hole 252 in the increasing layer dielectric layer 250, the conductive blind hole 252 is electrically connected with the line layer 251 and electric contact mat
22, and outermost line layer 251 has multiple electric connection pads 254.
In the present embodiment, the increasing layer dielectric layer 250 can be as sandwich layer and various about the species of circuit processing procedure, has no
Especially limit, so not describing in detail.
As shown in Figure 5 C, one second insulating protective layer 26b, second insulating protective layer are formed on the layer reinforced structure 25
26b has multiple second perforate 260b, to make those correspondences of electric connection pad 254 expose to respectively second perforate 260b.
Then, surface-treated layer 24 is formed on the electric connection pad 254 in second perforate 260b.
As shown in Figure 5 D, the side along the two copper clad laminates piece 20 is cut, line of cut L as shown in Figure 5 C, and order should
The superposed layers of copper 201 of two copper clad laminate pieces 20 separates automatically, makes supporting construction 2b be separated into two supporter 2c, with
Isolate the base plate for packaging 2 with supporter 2c in upper and lower side ".
The preparation method of the base plate for packaging 2 with supporter 2c of the present invention ", by the thickness of supporter 2c, makes the encapsulation
The integral thickness of substrate 2 " can be more than or equal to 130um, to avoid not good a variety of of production operation of the prior art such as from asking
Topic.
Additionally, being initially formed the first insulating protective layer 26a on the second metal-stripping layer 212, electric contact mat is re-formed
22, make the base plate for packaging 2 " relative both sides be respectively provided with insulating protective layer (first and second insulating protective layer 26a, 26b).
Also, in being subsequently packaged before processing procedure, the base plate for packaging 2 " by copper clad laminate piece 20 and reinforcing plate body 21, with
The intensity of lifting overall package substrate 2 ", so will not rupture when transporting.
Refer to Fig. 6 A to Fig. 6 B, it is the base plate for packaging 2 with supporter 2c using the present invention " follow-up encapsulation system
The cross-sectional schematic of journey.
As shown in Figure 6A, the processing procedure of hookup 5D and be packaged processing procedure, core is set on second insulating protective layer 26b
Piece 27, and make those electric connection pads 254 be electrically connected with the chip 27 by bonding wire 270；Then, in second insulating protective layer
Packing colloid 28 is formed on 26b, to coat the chip 27 and bonding wire 270.
Then, the first metal-stripping layer 211 and the second metal-stripping layer 212 are separated, with remove the copper clad laminate piece 20,
The metal-stripping layer 211 of dielectric layer 210 and first, and expose outside the second metal-stripping layer 212.
In the present embodiment, because the first metal-stripping layer 211 combines for physically the second metal-stripping layer 212,
So when separating the first metal-stripping layer 211 and the second metal-stripping layer 212, it is only necessary to carried out point with the physics mode such as peeled off
From.
As shown in Figure 6B, remove the second metal-stripping layer 212 by etching mode, and in the lump microetch those be electrically connected with
The section bottom of touch pad 22, to expose outside the first insulating protective layer 26a and those bottoms of electric contact mat 22 '.
Then, cutting processing procedure is carried out, to obtain multiple encapsulating structures 3 ", and soldered ball is combined on the electric contact mat 22 '
29。
The base plate for packaging 2 of the present embodiment " is deducted after the thickness of supporter 2c, and the gross thickness of other structures (contains increasing layer
Dielectric layer 250, the first insulating protective layer 26a, the second insulating protective layer 26b) 60um is less than, so in encapsulation procedure, removing
After supporter 2c (the copper clad laminate piece 20 with the reinforcing plate body 21), encapsulating structure 3 can be greatly reduced " thickness, to meet
The demand of microminiaturization.
Additionally, the base plate for packaging 2 " by supporter 2c, to lift overall package substrate 2 " intensity, so in being sealed
Will not rupture during dress processing procedure.
Also, forming the first insulating protective layer 26a by the second metal-stripping layer 212, to work as second gold medal is removed
After category peel ply 212, the base plate for packaging 2 " become symmetrical structure, to avoid the base plate for packaging 2 " there is warpage (warpage), and
Can be by the protection of first insulating protective layer 26a, to avoid the surface scratches of the electric contact mat 22 '.
The present invention also provides a kind of base plate for packaging 2 with supporter 2c, including：There is layers of copper 201 in opposite sides,
202 copper clad laminate piece 20, the reinforcing plate body 21 in a wherein layers of copper 202 of the copper clad laminate piece 20 and it is formed at
Multiple electric contact mats 22 on the reinforcing plate body 21.
Described supporter 2c includes the copper clad laminate piece 20 and the reinforcing plate body 21.
Described copper clad laminate piece 20 also includes insulating barrier 200, and the layers of copper 201,202 is relative located at the insulating barrier 200
Both sides.However, the species of copper clad laminate piece is various, there is no particular restriction.
Described reinforcing plate body 21 have dielectric layer 210 with reference to the layers of copper 202, on the dielectric layer 210 first
Metal-stripping layer 211 and the second metal-stripping layer 212 on the first metal-stripping layer 211；In the present embodiment, should
First metal-stripping layer 211 combines for physically the second metal-stripping layer 212.
Described electric contact mat 22 is on the second metal-stripping layer 212, and the shape on those electric contact mats 22
Into there is surface-treated layer 24.
Described base plate for packaging 2 also includes putting brilliant pad 23 on the second metal-stripping layer 212.
In a wherein embodiment, the base plate for packaging 2 ' may also comprise be formed at the second metal-stripping layer 212 with it is electrical
Layer reinforced structure 25 in engagement pad 22.
Described layer reinforced structure 25 includes an at least increasing layer dielectric layer 250, the circuit on the respectively increasing layer dielectric layer 250
Layer 251 and the conductive blind hole 252 in the respectively increasing layer dielectric layer 250, the conductive blind hole 252 is electrically connected with the line layer 251
Have and put brilliant pad 253 and multiple electric connection pads 254 with electric contact mat 22, and outermost line layer 251, and in those electricity
Surface-treated layer 24 is formed with property connection gasket 254.
In another embodiment, the base plate for packaging 2 " also include that be formed on the second metal-stripping layer 212 first is exhausted
Edge protective layer 26a and the second insulating protective layer 26b on the layer reinforced structure 25.
The first described insulating protective layer 26a is formed with multiple first perforate 260a, to make those electric contact mats 22 pairs
Should be in those first perforates 260a, and the layer reinforced structure 25 is located at the first insulating protective layer 26a and electric contact mat 22
On.
The second described insulating protective layer 26b has multiple second perforate 260b, to make those correspondences of electric connection pad 254
Respectively second perforate 260b is exposed to, so that surface-treated layer 24 is formed on the electric connection pad 254.
In sum, the base plate for packaging with supporter of the invention and its preparation method, mainly by this support structure,
Lower both sides make the electric contact mat, then the supporting construction is separated into into two supporters, to form two envelopes with the supporter
Dress substrate, so first procedure can produce two batches base plate for packaging, with improving production efficiency, and effectively reduces cost of manufacture；
The integral thickness that the base plate for packaging can be made meets the demand of production operation, so the not good problem of production operation can be avoided.
Additionally, after the supporter is removed in encapsulation procedure, the gross thickness of the remaining structure of the base plate for packaging is significantly
Reduce, thus reduce the thickness of encapsulating structure, to meet the demand of microminiaturization.
Also, when processing procedure is packaged, the intensity of the base plate for packaging with the supporter is enough strong, so will not when transporting
With when being packaged processing procedure, the base plate for packaging will not rupture for rupture.
In addition, by the design of first and second insulating protective layer, making the base plate for packaging become symmetrical structure, to avoid
There is warpage in base plate for packaging, and can avoid the surface scratches of the electric contact mat and electric connection pad.
Above-described embodiment is of the invention not for limiting only to the principle and its effect of the illustrative present invention.Appoint
What those skilled in the art can modify under the spirit and the scope without prejudice to the present invention to above-described embodiment.Therefore originally
The rights protection scope of invention, should be as listed by claims.
Claims (13)
1. a kind of base plate for packaging with supporter, including：
Copper clad laminate piece, is separably stacked and placed on another copper clad laminate piece of another base plate for packaging, wherein the Copper Foil base
Plate includes insulating barrier and the layers of copper located at the insulating barrier opposite sides；
Reinforcing plate body, is incorporated in a wherein layers of copper of the copper clad laminate piece to be formed with the copper clad laminate piece by the reinforcing plate body
The supporter, the reinforcing plate body has dielectric layer, the first metal-stripping layer and the second gold medal being sequentially disposed in a wherein layers of copper
Category peel ply, wherein supporter is separably directly configured on another supporter of another base plate for packaging；
Electric contact mat, it is formed on the second metal-stripping layer；And
First insulating protective layer, it is formed on the second metal-stripping layer, and is formed with the first perforate, to make this in electrical contact
Pad is in first perforate.
2. the base plate for packaging with supporter according to claim 1, it is characterised in that the base plate for packaging also includes being formed
Surface-treated layer on the electric contact mat.
3. the base plate for packaging with supporter according to claim 1, it is characterised in that the base plate for packaging also includes being formed
Brilliant pad is put on the second metal-stripping layer.
4. the base plate for packaging with supporter according to claim 1, it is characterised in that the base plate for packaging also includes being formed
Layer reinforced structure on first insulating protective layer and electric contact mat, the layer reinforced structure includes an at least increasing layer dielectric layer, sets
Line layer on the respectively increasing layer dielectric layer and the conductive blind hole in the respectively increasing layer dielectric layer, the conductive blind hole electrically connects
The line layer and the electric contact mat are connect, and outermost line layer is padded and multiple electric connection pads with crystalline substance is put.
5. the base plate for packaging with supporter according to claim 1, it is characterised in that the base plate for packaging also includes：
Layer reinforced structure, it is formed on first insulating protective layer and electric contact mat, and the layer reinforced structure includes an at least increasing layer
Dielectric layer, the line layer on the respectively increasing layer dielectric layer and the conductive blind hole in the respectively increasing layer dielectric layer, the conduction is blind
Hole is electrically connected with the line layer and the electric contact mat, and outermost line layer has multiple electric connection pads；And
Second insulating protective layer, it is formed on the layer reinforced structure, and is formed with the second perforate, to make outside those electric connection pads
It is exposed to second perforate.
6. the base plate for packaging with supporter according to claim 5, it is characterised in that the base plate for packaging also includes being formed
Surface-treated layer on the electric connection pad.
7. a kind of preparation method of the base plate for packaging with supporter, including：
Two copper clad laminate pieces are provided, respectively the copper clad laminate piece has insulating barrier and the layers of copper located at the insulating barrier opposite sides, and
The two copper clad laminates piece is superposed with its layers of copper；
Reinforcing plate body is combined on the two copper clad laminates piece to form supporting construction, the reinforcing plate body is with the cladding two Copper Foils base
Plate with fix the dielectric layer of the two copper clad laminates piece, the first metal-stripping layer on the dielectric layer and located at this first
The second metal-stripping layer on metal-stripping layer；
Form multiple electric contact mats on the second metal-stripping layer, and formed on the second metal-stripping layer put crystalline substance in the lump
Pad；And
Side along the two copper clad laminates piece is cut, and makes the superposed layers of copper of the two copper clad laminates piece separate, and makes this
Support structure is separated into two supporters, to obtain two base plate for packaging with the supporter.
8. the preparation method of the base plate for packaging with supporter according to claim 7, it is characterised in that first metal-stripping
Layer combines for physically the second metal-stripping layer.
9. the preparation method of the base plate for packaging with supporter according to claim 7, it is characterised in that the base plate for packaging has
Multiple encapsulation units, for singulation processing procedure.
10. the preparation method of the base plate for packaging with supporter according to claim 7, it is characterised in that the base plate for packaging is also
It is included on those electric contact mats and forms surface-treated layer.
A kind of 11. preparation methods of the base plate for packaging with supporter, including：
Two copper clad laminate pieces are provided, respectively the copper clad laminate piece has insulating barrier and the layers of copper located at the insulating barrier opposite sides, and
The two copper clad laminates piece is superposed with its layers of copper；
Reinforcing plate body is combined on the two copper clad laminates piece to form supporting construction, the reinforcing plate body is with the cladding two Copper Foils base
Plate with fix the dielectric layer of the two copper clad laminates piece, the first metal-stripping layer on the dielectric layer and located at this first
The second metal-stripping layer on metal-stripping layer；
The first insulating protective layer is formed on the second metal-stripping layer, and first is formed with first insulating protective layer and opened
Hole, with the part surface for making the second metal-stripping layer first perforate is exposed to；
Multiple electric contact mats are formed on the second metal-stripping layer in first perforate；And
Side along the two copper clad laminates piece is cut, and makes the superposed layers of copper of the two copper clad laminates piece separate, and makes this
Support structure is separated into two supporters, to obtain two base plate for packaging with the supporter.
The preparation method of 12. base plate for packaging with supporter according to claim 11, it is characterised in that in carrying out cutting
Before, also include：
Layer reinforced structure is formed on first insulating protective layer and those electric contact mats, the layer reinforced structure includes an at least increasing layer
Dielectric layer, the line layer on the respectively increasing layer dielectric layer and the conductive blind hole in the respectively increasing layer dielectric layer, the conduction is blind
Hole is electrically connected with the line layer and the electric contact mat, and outermost line layer has multiple electric connection pads；And
The second insulating protective layer is formed on the layer reinforced structure, and the second perforate is formed on second insulating protective layer, to make
Those electric connection pads expose to second perforate.
The preparation method of 13. base plate for packaging with supporter according to claim 12, it is characterised in that the preparation method is included in
After forming second perforate, on the electric connection pad in second perforate surface-treated layer is formed.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100144529A TWI425887B (en) | 2011-12-02 | 2011-12-02 | Package substrate having supporting body and method of manufacture thereof |
| TW100144529 | 2011-12-02 | ||
| TW100144800 | 2011-12-06 | ||
| TW100144800A TWI500128B (en) | 2011-12-06 | 2011-12-06 | Package substrate formed with support body and method of forming same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103137568A CN103137568A (en) | 2013-06-05 |
| CN103137568B true CN103137568B (en) | 2017-05-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210127399.0A Active CN103137568B (en) | 2011-12-02 | 2012-04-26 | Package substrate with support and method for fabricating the same |
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| CN (1) | CN103137568B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107564876B (en) * | 2017-08-30 | 2019-09-27 | 深圳中科四合科技有限公司 | A kind of chip-packaging structure |
| CN107507781B (en) * | 2017-08-30 | 2019-09-27 | 深圳中科四合科技有限公司 | A kind of preparation method of chip-packaging structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201101441A (en) * | 2009-06-23 | 2011-01-01 | Phoenix Prec Technology Corp | Package substrate and base therefor and fabrication method thereof |
| CN103066048A (en) * | 2011-10-21 | 2013-04-24 | 欣兴电子股份有限公司 | Packaging substrate and packaging structure provided with supporting body and manufacture method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011199077A (en) * | 2010-03-19 | 2011-10-06 | Ngk Spark Plug Co Ltd | Method of manufacturing multilayer wiring board |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201101441A (en) * | 2009-06-23 | 2011-01-01 | Phoenix Prec Technology Corp | Package substrate and base therefor and fabrication method thereof |
| CN103066048A (en) * | 2011-10-21 | 2013-04-24 | 欣兴电子股份有限公司 | Packaging substrate and packaging structure provided with supporting body and manufacture method thereof |
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