CN103137447B - Ion implantation apparatus - Google Patents
Ion implantation apparatus Download PDFInfo
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- CN103137447B CN103137447B CN201110391312.6A CN201110391312A CN103137447B CN 103137447 B CN103137447 B CN 103137447B CN 201110391312 A CN201110391312 A CN 201110391312A CN 103137447 B CN103137447 B CN 103137447B
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- reaction chamber
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- silicon chip
- pumping chamber
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Abstract
The invention discloses a kind of ion implantation apparatus, comprise power-supply system, reaction chamber, pre-pumping chamber, vacuum-control(led) system, send sheet system and plenum system. Described vacuum-control(led) system is connected with described reaction chamber, described pre-pumping chamber respectively; Described reaction chamber is connected with described pre-pumping chamber; The described sheet system of sending is for silicon chip is transported to described reaction chamber from described pre-pumping chamber, and silicon chip is transported to the ionic reaction position in described reaction chamber; Described plenum system is for passing into reaction and purge gas to described reaction chamber. The present invention has given up the injection mode of original ion implantation apparatus, has removed the complicated structure such as quality analysis, ion beam focusing and scanning system, and a kind of ion implantation apparatus that large area is injected that can be used for simple in structure is provided.
Description
Technical field
The present invention relates to plasma injection technique field, particularly a kind of ion implantation apparatus.
Background technology
Be applied at present ion implantation apparatus that IC manufactures field generally by ion source system, Ion Extraction andAccelerating system, quality analysis system, ion beam focusing and scanning system, target chamber system and vacuum system.This type of ion implantation apparatus has the advantages such as the ionic purity of injection is high, and implantation dosage control is accurate, but also depositsIn some shortcomings part: 1, the equal more complicated of principle and structure, purchase and support price costliness; 2,Sizes of substrate is less than normal, cannot carry out large area injection; 3, inject after activate temperature required higher.Manufacture and compare with IC, although have similarity in technical process, the large area that new development removesInjection technology has proposed the requirement of upgrading to implanter: 1, the area of substrate is larger; 2, the material of substrateMaterial difference makes technological temperature unsuitable too high; 3, the injection degree of depth is lower, and ion energy demand declines to some extent;4, purity and the uniformity requirement of injecting particle reduce.
Summary of the invention
Technical problem to be solved by this invention be to provide a kind of simple in structure can be used for large area inject fromThe ion implantation apparatus of son.
For solving the problems of the technologies described above, the invention provides a kind of ion implantation apparatus comprise power-supply system,Reaction chamber, pre-pumping chamber, vacuum-control(led) system, send sheet system and plenum system; Described vacuum controlSystem processed is connected with described reaction chamber, described pre-pumping chamber respectively; Described reaction chamber and described pre-Pumping chamber connects; The described sheet system of sending is for being transported to described reaction chamber by silicon chip from described pre-pumping chamberChamber, and silicon chip is transported to the ionic reaction position in described reaction chamber; Described plenum system is used forPass into reaction and purge gas to described reaction chamber.
Further, described vacuum-control(led) system comprise molecular pump, the first mechanical pump, the second mechanical pump,Branch's pump, vacuum meter, be connected to the family of power and influence between described pre-pumping chamber and reaction chamber, magnetic valve,Pneumatic operated valves at different levels in pendulum valve and gas piping; One branch road of described the first mechanical pump passes through magnetic valveBe connected with described reaction chamber, another branch road successively by magnetic valve, molecular pump and pendulum valve with described inReaction chamber connects; Described the second mechanical pump is connected with described pre-pumping chamber by described magnetic valve; InstituteStating vacuum meter is connected with described pre-pumping chamber and reaction chamber respectively.
Further, described in, send sheet system to comprise vacuum mechanical-arm and elastic Multipoint support-typeHold the bottom electrode of chip architecture; Described vacuum mechanical-arm is transported to described anti-by silicon chip from described pre-pumping chamberAnswer chamber; Described silicon chip is fixed on described reaction chamber top by described bottom electrode.
Further, described plenum system comprises source of the gas, mass flow controller and magnetic valve; DescribedSource of the gas is connected with described reaction chamber by described mass flow controller, magnetic valve successively.
Further, described power-supply system comprises radio-frequency power supply, radio-frequency power supply adaptation and the pulse power;The described pulse power is connected with described reaction chamber; Described radio-frequency power supply mates by described radio-frequency power supplyDevice is connected with described reaction chamber.
The present invention has given up the injection mode of original ion implantation apparatus, has removed quality analysis, ion beamFocus on the structure complicated with scanning system etc., provide a kind of and simple in structurely can be used for that large area injectsIon implantation apparatus.
Brief description of the drawings
The structural representation of a kind of ion implantation apparatus that Fig. 1 provides for the embodiment of the present invention.
Detailed description of the invention
Referring to Fig. 1, a kind of ion implantation apparatus that the embodiment of the present invention provides, it comprise vacuum system,Send sheet system, plenum system and power-supply system.
Wherein, radio-frequency power system comprises radio-frequency power supply 1, radio-frequency power supply adaptation 2 and Pulse ElectricSource 3. Radio-frequency power supply 1 provides plasma required energy for reacting. The pulse power 3 provides for reactingPlasma injects environment.
Vacuum system comprises pre-pumping chamber 24, reaction chamber 25. Reaction chamber 25 and pre-pumping chamber 24Between connected by the family of power and influence. Wherein, pre-pumping chamber 24 is for placing and the space of transporting silicon chip, its pressurePower is converting between atmospheric pressure and low vacuum, can obtain vacuum by mechanical pump. Reaction chamber 25Need higher vacuum environment, remain at rough vacuum (for example, within 10Pa), and at siliconAfter sheet is sent into, use molecular pump 5 to obtain high vacuum.
Vacuum-control(led) system comprises molecular pump 5, mechanical pump 6, vacuum meter 7, mechanical pump 8, magnetic valve20, at different levels in the family of power and influence between magnetic valve 21, magnetic valve 22, pendulum valve 23, chamber and gas pipingThe hardware compositions such as pneumatic operated valve. Wherein, the branch road passing through after magnetic valve 22 of mechanical pump 6 passes through successivelyMolecular pump 5 and pendulum valve 23 are connected with reaction chamber 25, and another branch road passes through magnetic valve 21 and reactsChamber 25 connects. Mechanical pump 8 is connected with pre-pumping chamber 24 by magnetic valve 20. Vacuum-control(led) systemThe butterfly valve using in middle molecular pump 5 uses current signal control, and other magnetic valves are all attached by digital portAdd the outside expanded circuit control of output. Mechanical pump is by Control, and molecular pump is undertaken by serial communicationControl. Vacuum meter 7 detects the pressure of pre-pumping chamber 24, reaction chamber 25.
Send sheet system to comprise that (for example, Shenyang Xin Song robot model is vacuum mechanical-armThe vacuum mechanical-arm of " SIASUN-SRBZ800A-SMSX type ") and elastic multi-point supportThe bottom electrode of holding chip architecture of formula. For example bottom electrode is disc, and disk top has all and four of distributionIndividual support column. What vacuum mechanical-arm was designed with annular hold chip architecture, ensures that silicon chip is in the process of transportingStable. In running, have two and walk shaped position, manually film releasing is to holding after chip architecture, vacuumManipulator can be delivered to silicon chip to reach reaction chamber 25 from described pre-pumping chamber 24 through the family of power and influence. TransportingIn process, bottom electrode has three and walks shaped position, the silicon chip that is positioned at vacuum mechanical-arm can be taken away orPut back to and utilize spring structure that silicon chip is fixed on to reaction chamber top, complete course of reaction. Send sheet systemAll optoelectronic switches excessively, in conjunction with the control of moving cell, ensure stable location out of shape and accurate, withTime combine the feature of motion process, in sheet process, be divided into different speed adjustment sending.
Plenum system comprises source of the gas 9, mass flow controller 10-14 and magnetic valve 15-19. Each gasSource 9 is connected with reaction chamber 25 by a mass flow controller, a magnetic valve successively. ?After vacuum environment, the reacting gas that selection is about to pass into, arranges gas by mass flow controllerFlow, opens magnetic valve, passes into after appropriate time, and it is stable that chamber pressure reaches, and completes once and supply gasProcess.
Because reacting gas in native system mostly is special gas, after reaction once, also to carry outNecessary purge stages, specifically refers to pass into nitrogen and uses mechanical pump that reaction chamber 25 pressure are reduced to lowThe process of vacuum, according to different demands, purge needs repeated multiple times. Mass flow controllerCoordinate respective external circuit to realize by analog input (feedback) with simulation output (input) function.
Below in conjunction with the structure of the ion implantation apparatus shown in Fig. 1, the present invention will be described, specific as follows:
Step 1, film releasing process:
(1), by the family of power and influence in closed condition, control vacuum system pre-pumping chamber 24 air pressure returnedTo atmospheric pressure, the hatch door of opening pre-pumping chamber 24 is placed on silicon chip on manipulator, closes hatch door.
(2), control mechanical pump and make pre-pumping chamber 24 and reaction chamber 25 obtain rough vacuum simultaneously,Two chamber pressure reach the family of power and influence and open requirement, open family of power and influence's manipulator and arrive reaction through pre-pumping chamber 24Chamber 25.
(3), the chip architecture of holding of bottom electrode 4 rises from original position, and silicon chip is held up, and leaves manipulator,Complete supporting spring process. Manipulator will return to pre-pumping chamber 24, and bottom electrode 4 rises to reaction chamber 25Top, fixes silicon chip by elastic structure.
(4), (for example, close condition of high vacuum degree that the family of power and influence uses molecular pump 5 abstraction reaction chambers 2510-5Pa) complete once complete film releasing process.
Step 2, course of reaction:
(1), obtain after high vacuum environment, select the gas of wish reaction, set corresponding flow, logicalEnter reaction chamber 25, reach stable air pressure.
(2), open radio-frequency power supply 1, reacting gas is build-up of luminance after the output of radio-frequency power supply 1, nowOpen the pulse power 1 and react powered-down after setting-up time, close source of the gas 9, complete primary first-order equation mistakeJourney.
(3), reaction finish after, nitrogen is passed into reaction chamber 25, now closure molecule pump 5, makesCarry out the purging of reacting gas with mechanical pump.
(4), by repeating above three actions, complete various kinds technical process.
Step 3, get sheet process:
(1), purge finish after, first control vacuum system reaction chamber 25 returned to rough vacuum,Bottom electrode 4 drops to supporting spring position.
(2), open manipulator silicon chip run to reaction chamber by the family of power and influence, silicon chip is fetched and is held sheetStructure is also returned to pre-pumping chamber.
(3), close the family of power and influence, control vacuum system and make pre-pumping chamber air pressure revert to atmospheric pressure, openPre-vacuum chamber hatch door, takes silicon chip away, completes once complete ion implantation process.
It should be noted last that, above detailed description of the invention is only in order to illustrate technical scheme of the present inventionAnd unrestricted, although the present invention is had been described in detail with reference to example, the ordinary skill people of this areaMember should be appreciated that and can modify or be equal to replacement technical scheme of the present invention, and does not depart fromThe spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of claim scope of the present invention.
Claims (1)
1. an ion implantation apparatus, comprises power-supply system, it is characterized in that, also comprises:
Reaction chamber, pre-pumping chamber, vacuum-control(led) system, send sheet system and plenum system;
Described vacuum-control(led) system is connected with described reaction chamber, described pre-pumping chamber respectively; Described anti-Answer chamber to be connected with described pre-pumping chamber; The described sheet system of sending is for transporting silicon chip from described pre-pumping chamberTransport to described reaction chamber, and silicon chip is transported to the ionic reaction position in described reaction chamber; InstituteState plenum system for pass into reaction and purge gas to described reaction chamber;
The described sheet system of sending comprises: vacuum mechanical-arm and elastic Multipoint support-type hold chip architectureBottom electrode; Described vacuum mechanical-arm is transported to described reaction chamber by silicon chip from described pre-pumping chamber;Described silicon chip is fixed on described reaction chamber top by described bottom electrode; Described vacuum-control(led) system comprises:
Molecular pump, the first mechanical pump, the second mechanical pump, branch's pump, vacuum meter, be connected to described pre-At different levels pneumatic in the family of power and influence, magnetic valve, pendulum valve and gas piping between pumping chamber and reaction chamberValve;
One branch road of described the first mechanical pump is connected with described reaction chamber by magnetic valve, another branch roadBe connected with described reaction chamber by magnetic valve, molecular pump and pendulum valve successively;
Described the second mechanical pump is connected with described pre-pumping chamber by described magnetic valve;
Described vacuum meter is connected with described pre-pumping chamber and reaction chamber respectively; Described plenum system comprises:
Source of the gas, mass flow controller and magnetic valve;
Described source of the gas is connected with described reaction chamber by described mass flow controller, magnetic valve successively;Described power-supply system comprises:
Radio-frequency power supply, radio-frequency power supply adaptation and the pulse power;
The described pulse power is connected with described reaction chamber; Described radio-frequency power supply is by described radio-frequency power supplyAdaptation is connected with described reaction chamber; Wherein, bottom electrode has three and walks shaped position, is positioned at vacuumThe silicon chip of manipulator takes away or puts back to and utilize spring structure that silicon chip is fixed on to reaction chamber top, andControl by optoelectronic switch in conjunction with moving cell, ensures stable location out of shape and accurate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110391312.6A CN103137447B (en) | 2011-11-30 | 2011-11-30 | Ion implantation apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110391312.6A CN103137447B (en) | 2011-11-30 | 2011-11-30 | Ion implantation apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103137447A CN103137447A (en) | 2013-06-05 |
| CN103137447B true CN103137447B (en) | 2016-05-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110391312.6A Expired - Fee Related CN103137447B (en) | 2011-11-30 | 2011-11-30 | Ion implantation apparatus |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0559360A1 (en) * | 1992-03-05 | 1993-09-08 | Eaton Corporation | End station for a parallel beam ion implanter |
| CN1547240A (en) * | 2003-12-08 | 2004-11-17 | 中国科学院长春光学精密机械与物理研 | Ion implantation machine |
| CN101964319A (en) * | 2010-08-04 | 2011-02-02 | 清华大学 | Wafer transmission system of ion implantation machine and wafer transmission method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4817556A (en) * | 1987-05-04 | 1989-04-04 | Varian Associates, Inc. | Apparatus for retaining wafers |
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2011
- 2011-11-30 CN CN201110391312.6A patent/CN103137447B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0559360A1 (en) * | 1992-03-05 | 1993-09-08 | Eaton Corporation | End station for a parallel beam ion implanter |
| CN1547240A (en) * | 2003-12-08 | 2004-11-17 | 中国科学院长春光学精密机械与物理研 | Ion implantation machine |
| CN101964319A (en) * | 2010-08-04 | 2011-02-02 | 清华大学 | Wafer transmission system of ion implantation machine and wafer transmission method thereof |
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| Publication number | Publication date |
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| CN103137447A (en) | 2013-06-05 |
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