CN103136421A - System-level photoelectric optimum design method used for iris imaging device - Google Patents
System-level photoelectric optimum design method used for iris imaging device Download PDFInfo
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- CN103136421A CN103136421A CN2013100426866A CN201310042686A CN103136421A CN 103136421 A CN103136421 A CN 103136421A CN 2013100426866 A CN2013100426866 A CN 2013100426866A CN 201310042686 A CN201310042686 A CN 201310042686A CN 103136421 A CN103136421 A CN 103136421A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 117
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- 238000005286 illumination Methods 0.000 claims description 66
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- 210000000554 iris Anatomy 0.000 description 134
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- 238000003333 near-infrared imaging Methods 0.000 description 8
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Abstract
The invention discloses a system-level photoelectric optimum design method used for an iris imaging device. Under the condition of a given WOD (Working Object Distance), a system-level optimum design comprises an optical imaging objective lens, a near-infrared optical fiber and a near-infrared lighting source, an image imaging sensor and a system-level optical signal generating and processing method; and the system-level photoelectric optimum design method used for the iris imaging device sequentially comprises the following steps: 1) defining system-level photoelectric parameters; 2) defining system-level photoelectric signal generation of an original unit pixel brightness value; 3) defining a pixel brightness statistical evaluation value in an iris region; 4) processing and controlling a photoelectric signal to realize the pixel brightness statistical evaluation value in the iris region to be within a preset brightness range; 5) performing GAMMA correction processing of the original signal on the pixel brightness value; and 6) self-adaptively controlling, processing and outputting based on a contrast ratio of the pixel brightness value of the pixel brightness statistical evaluation value in the iris region. The system-level photoelectric optimum design method used for the iris imaging device can finish the system-level iris imaging device design and realize image formation of high-quality iris images.
Description
Technical field
The present invention relates to a kind of system-level photoelectricity Optimization Design for the iris imaging device, belong to photoelectric field.
Background technology
So far, all open source literatures for the iris imaging device and patent retrieval show, all are roughly the structure of describing the iris imaging device, the contents such as parts and optics electricity component composing method.
The inventor is found to so far without any a kind of in actual applications under given demand condition, for the system-level method that instructs iris imaging device photoelectricity optimal design, particularly how to obtain on the other hand iris and sclera, iris and pupil, the high-quality iris image of iris texture three high-contrast all needs a kind of system-level photoelectricity Optimization Design.
Summary of the invention
The technical problem to be solved in the present invention is under objective given demand condition, provides a kind of for the system-level method that instructs iris imaging device photoelectricity optimal design, and the design of the iris imaging device of completion system level, be embodied as the image height quality iris image.
In order to solve the problems of the technologies described above, the invention provides a kind of system-level photoelectricity Optimization Design for the iris imaging device, according at given working substance under the condition of WOD, system-level optimal design comprises the optical imagery object lens, near infrared light optical light filter and near infrared illumination source, the system-level photosignal of image imaging sensor and optimization produces and disposal route, and its described feature is:
1. define system level photoelectric parameter λ, FWHM, I, E, EFL, F, FOV, OE_TE, ADC_T, GAIN, SNR, ET
The transmissivity peak wavelength of near infrared light optical light filter is set near infrared illumination source equivalence peak wavelength λ,
Half maximal value all-wave FWHM of near infrared light optical light filter is more than or equal to the spectrum FWHM that near infrared illumination source produces,
Wherein said equivalent peak wavelength λ=∑ h
iλ
i,∑ h
i=1
<1>,
H
iradiation intensity normalization coefficient near infrared illumination source spectrum
;λ
ifor near infrared illumination source spectrum, wavelength coverage 750nm-880nm;
Further, when the image imaging sensor adopts monochrome type, equivalence peak wavelength λ is chosen as two waveband or single band, it is 780nm that described two waveband further comprises the 750-810nm(representative value) and the 810-880nm(representative value be 850nm) two wave bands, FWHM > 30nm, it is 810nm that described single band comprises the 780-850nm(representative value), FWHM > 30nm;
When the image imaging sensor adopts color-type, equivalent peak wavelength λ is chosen as single band, and described single band is that the 810-880nm(representative value is 850nm), FWHM > 30nm;
The radiation intensity I(mW/sr of near infrared illumination source, the every sterad of milliwatt):
I=E*WOD
2 E<10mW/cm
2 <2>
Wherein:
e is greatest irradiation rate or the radiant illumination apart from the near infrared illumination source of WOD place acceptance at given working substance;
The equivalent focal length value EFL of optical imagery object lens has:
EFL=WOD*β/(1+β) <3>
Wherein: WOD is given working substance distance;
β is iris image space and object space resolution ratio
β=SOP*POI/SOI <4>
Wherein said
SOP(size of pixel) be the physical size of image imaging sensor units pixel;
POI is the default iris diameter pixel dimension in image space resolution,
SOI is the default iris mean diameter physical size in object space resolution;
The aperture F value of optical imagery object lens (or relative optical aperture inverse) has:
F=EFL/D <5>
0.5*SOP/(1.22*λ)≤F≤2.0*SOP/(1.22*λ) <6>
The pupil that wherein said D is the optical imagery object lens or the diameter of clear aperature;
The field angle FOV of optical imagery object lens has:
FOV≥2*arctan(（DOI*SOP)/(2*EFL)) <7>
The diagonal pixels quantity that wherein said DOI is the image imaging sensor;
The image imaging sensor has photoelectricity conversion quantum efficiency OE_TE>1V/ (mW/cm
2* s)
The image imaging sensor has the conversion resolution ADC_T=2 of analog to digital converter ADC
nlSB/V, LSB is ADC resolution least significant bit (LSB), N is ADC resolution number of significant digit, N>=8;
The image imaging sensor has when analog gain GAIN=1.0, signal to noise ratio snr > 38db;
The system-level photosignal of optimizing produces and disposal route comprises:
2. the system-level photosignal that defines original unit picture element brightness value Yraw produces
Yraw=ET * GAIN * E * OE_TE * ADC_T <8>
The time shutter exposure time that wherein said ET is the image imaging sensor or integral time integration time, guarantee to control ET<1/30 second;
The analog gain that wherein said GAIN is the image imaging sensor, analog gain GAIN controls and must guarantee the signal to noise ratio snr produced > 36db;
Wherein said E is formula<2>middle greatest irradiation rate or the radiant illumination controlled apart from the near infrared illumination source intensity I of WOD place acceptance at given working substance defined, guarantee control E<10mW/cm
2;
3. define iris region pixel intensity statistical estimation value Ysp
Ysp=S(Yraw)
Wherein said S is iris region pixel intensity statistical estimation function, the method that described pixel intensity statistical estimation function adopts comprises: pixel intensity statistics with histogram, pixel intensity frequency spectrum statistics, pixel intensity mean value, the pixel intensity weighted mean value, pixel intensity intermediate value etc.;
4.ET, GAIN, the E Photoelectric Signal Processing is controlled, and realizes that iris region pixel intensity statistical estimation value Ysp is in default [Yll, Yhl] brightness range
Yll≤Ysp≤Yhl
Wherein said Yll is iris region pixel intensity lower limit, and Yhl is the iris region pixel intensity upper limit;
Described Photoelectric Signal Processing is controlled as the formula according to definition in step 2<8 > linear product control relation, change ET, GAIN, the E photosignal realizes that original unit picture element brightness value Yraw changes, and makes corresponding iris region pixel intensity statistical estimation value Ysp meet the pre-conditioned of Yll≤Ysp≤Yhl;
Further, ET, GAIN, E can fix wherein 1 controlled condition, adjusts other 2 controlled conditions, maybe can fix wherein 2 controlled conditions, adjusts other 1 controlled condition;
5. pixel brightness value Yraw carries out original signal GAMMA correction processing, keeps original value, keeps the GAMMA=1.0 linear relationship
Ygamma=GAMMA（Yraw）=Yraw
GAMMA=1.0=Yraw ；
6. Yout is processed and exported to the pixel brightness value Yraw contrast adaptive control based on iris region pixel intensity statistical estimation value Ysp
Yout=Contrast*(Yraw-Ysp)+Ysp
1.0≤Contrast≤2.0
Yout=2
N-1 if Yout>2
N-1；
Yout=0 if Yout<0；
Wherein said Contrast is the contrast adaptive control coefficient based on iris region pixel intensity statistical estimation value Ysp, and N is ADC resolution number of significant digit.
Sum up foregoing description, the of the present invention realization in actual applications under objective given demand condition, for the system-level method that instructs iris imaging device photoelectricity optimal design, the optimal design of simultaneity factor level guarantees that the iris imaging device obtains iris and sclera, iris and pupil, the high-quality iris image of iris texture three high-contrast.
The accompanying drawing explanation
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
The step that Fig. 1 is iris imaging apparatus system level photoelectricity Optimization Design of the present invention;
The composition structural map that Fig. 2 is the specific embodiment of the invention 1 iris imaging device;
The composition structural map that Fig. 3 is the specific embodiment of the invention 2 iris imaging devices;
Optical imagery object lens (ZEMAX) the topological design figure that Fig. 4 is the specific embodiment of the invention 1 iris imaging device;
The optical imagery object lens (ZEMAX) that Fig. 5 is the specific embodiment of the invention 1 iris imaging device are the field luminance design drawing relatively;
Optical imagery object lens (ZEMAX) the visual field diffraction MTF design drawing that Fig. 6 is the specific embodiment of the invention 1 iris imaging device;
Optical imagery object lens (ZEMAX) curvature of field that Fig. 7 is the specific embodiment of the invention 1 iris imaging device and distortion design drawing;
Optical imagery object lens (ZEMAX) the some diffusion design figure that Fig. 8 is the specific embodiment of the invention 1 iris imaging device;
Fig. 9 proofreaies and correct through original signal GAMMA=0.45 the image of processing;
Figure 10 proofreaies and correct through original signal GAMMA=1.0 the image of processing;
Figure 11 is the image of not processing through the contrast adaptive control;
Figure 12 is the image of processing through Contrast=1.25 contrast adaptive control.
Embodiment
Embodiment 1,
Fig. 2 has described the composition structural map of the iris imaging device in specific embodiment 1, comprises with lower component and forming:
Iris imaging device 1; left eye 2L; left eye virtual image 2L'; right eye 2R; right eye virtual image 2R'; near infrared illumination source left side LED 3L; near infrared illumination source right side LED 3R, near infrared illumination source left side transmission window 4L, near infrared illumination source right side transmission window 4R; near infrared light optical light filter protecting window 5; near infrared light optical light filter 6, optical imagery object lens 7, image imaging sensor 8; can match the rear burnt near infrared light optical light filter 9 of installation, for burnt focusing driver 10 after the optical imagery object lens of automatic focus AF.
The near infrared light optical light filter protecting window 5 of iris imaging device 1 is positioned at iris imaging device 1 the most front outside surface for the protection of whole iris imaging device, guarantees to use under various different operating environment.
The near infrared illumination source left side LED 3L of iris imaging device 1, near infrared illumination source right side LED 3R lays respectively at the left and right sides of iris imaging device 1, its outside is respectively by near infrared illumination source left side transmission window 4L, and near infrared illumination source right side transmission window 4R covers and disperses (radiation) angle for what control near infrared illumination source.
The near infrared light optical light filter 6 of iris imaging device 1, optical imagery object lens 7, image imaging sensor 8, install at same optic axis center successively, is used to form basic near infrared imaging light path.
Near infrared light optical light filter 6 is for reflection from external environment condition left eye 2L, and the visible ray of right eye 2R forms left eye virtual image 2L', right eye virtual image 2R'; Transmission is near infrared illumination source left side LED 3L, and near infrared illumination source right side LED 3R is reflected in left eye 2L, and the near infrared light of right eye 2R forms effective near infrared imaging light.
Near infrared light optical light filter 6, effect one be the invalid veiling glare of filtering interfering imaging so that only the effective near infrared light of transmission improve image quality, effect two is the left eye virtual image 2L' by forming, and right eye virtual image 2R' realizes that the user independently locates in the optic axis center of iris imaging device 1.
Optical imagery object lens 7 converge the image space focal plane of optical focus to image imaging sensor 8 for effective near infrared imaging light being formed to the physics refraction.
Can match the rear burnt near infrared light optical light filter 9 of installation, the light path center between optical imagery object lens 7 and image imaging sensor 8, for the invalid veiling glare of further filtering interfering imaging, improve the near infrared light purity for the imaging purpose.
For burnt focusing driver 10 after the optical imagery object lens of automatic focus AF, the light path center between near infrared light optical light filter 6 and image imaging sensor 8, and integrated airtight with optical imagery object lens 7.Realize by the rear burnt position of controlling between optical imagery object lens 7 and image imaging sensor 8 the automatic focus AF that the image space focal plane position is adjusted for burnt focusing driver 10 after the optical imagery object lens of automatic focus AF.Can be by step micro motor for burnt focusing driver 10 after the optical imagery object lens of automatic focus AF, voice coil motor or other linear course adjustment control form.
At first according to the demand analysis of specific embodiment 1, optical imagery object lens 7 and image imaging sensor 8 be imaging left eye 2L and right eye 2R simultaneously, must adopt 5,000,000 pixels (5Mpixels) resolution, so the physical size representative value of image imaging sensor 8 unit picture elements of 5,000,000 pixels (5Mpixels) resolution is as 2.2um, the 2560*1944 pixel, but in view of the physical size of the so little unit picture element of current technology make its photoelectricity conversion quantum efficiency OE_TE and SNR relatively low, also mean that needs increase logical light quantity, consider the small-size object of this type of imaging iris, further impact is rear burnt the adjustment there being working substance to change very responsive apart from WOD, therefore after specific embodiment 1 has designed the optical imagery object lens, burnt focusing driver 10 is for carrying out automatic focus AF.
Next, in actual applications under objective given demand condition, iris imaging device 1 according at given working substance apart from WOD as 30cm(working object distance) condition under, specific embodiment 1 describes how to carry out system-level photoelectricity optimal design in detail.
1), define system level photoelectric parameter λ, FWHM, I, EFL, F, FOV, OE_TE, ADC_T, GAIN, SNR, ET:
The transmissivity peak wavelength of near infrared light optical light filter 6 is set near infrared illumination source left side LED 3L, near infrared illumination source right side LED 3R(hereinafter to be referred as near infrared illumination source 3L, 3R) equivalent peak wavelength λ;
Half maximal value all-wave FWHM(Full Wave at Half Maximum of near infrared light optical light filter 6) be more than or equal near infrared illumination source 3L, the spectrum FWHM that 3R produces,
Wherein said equivalent peak wavelength λ=∑ h
iλ
i,∑ h
i=1<1>
h
ifor the radiation intensity normalization coefficient of near infrared illumination source spectrum, λ
ifor near infrared illumination source spectrum, wavelength coverage 750nm-880nm;
The remarks explanation: near infrared illumination source spectrum is exactly near infrared illumination source 3L, the wavelength coverage of 3R;
Further, when image imaging sensor 8 adopts monochrome type, equivalence peak wavelength λ is chosen as two waveband or single band, it is 780nm that described two waveband further comprises the 750-810nm(representative value) and the 810-880nm(representative value be 850nm) two wave bands, FWHM > 30nm, it is 810nm that described single band comprises the 780-850nm(representative value), FWHM > 30nm;
When image imaging sensor 8 adopts color-type, equivalent peak wavelength λ is chosen as single band, and described single band is that the 810-880nm(representative value is 850nm), FWHM > 30nm;
Specific embodiment 1 image imaging sensor 8 adopts monochrome type, and two waveband comprises 780nm, 850nm, and FWHM=60nm,
Equivalence peak wavelength λ=810nm, FWHM=120nm.
The radiation intensity I(mW/sr of specific embodiment 1 near infrared illumination source, the every sterad of milliwatt):
I=E*WOD
2 E<10mW/cm
2 <2>
Wherein:
e is greatest irradiation rate or the radiant illumination apart from the near infrared illumination source of WOD place acceptance at given working substance;
(remarks explanation: as long as the E value meets E<10mW/cm
2, and then according to<2 and given WOD calculate obtain);
The equivalent focal length value EFL(Equivalent focal length of specific embodiment 1 optical imagery object lens 7) have:
EFL=WOD*β/(1+β) <3>
Wherein: WOD is given working substance distance;
β is iris image space and object space resolution ratio
β=SOP*POI/SOI <4>
Wherein said
SOP(size of pixel) be the physical size of image imaging sensor 8 unit picture elements;
POI is the default iris diameter pixel dimension in image space resolution, and a nearlyer step POI scope is 160-320pixels;
SOI is the default iris mean diameter physical size in object space resolution, and a nearlyer step SOI scope is 9-13mm;
Specific embodiment 1, SOP=2.2um/pixel, POI=220pixels, SOI=11mm,
β=0.044,EFL=12.6mm。
The aperture F value of specific embodiment 1 optical imagery object lens 7 (or relative optical aperture inverse) has:
F=EFL/D <5>
0.5*SOP/(1.22*λ)≤F≤2.0*SOP/(1.22*λ) <6>
The pupil that wherein said D is optical imagery object lens 7 or the diameter of clear aperature;
Specific embodiment 1 is selected to approach lower limit f-number F=1.4, D=9mm, and so the logical light quantity of design can guarantee image imaging sensor 8 image quality.
The field angle FOV(Field of View of specific embodiment 1 optical imagery object lens 7) have:
FOV≥2*arctan(（DOI*SOP)/(2*EFL)) <7>
The diagonal pixels quantity that wherein said DOI is image imaging sensor 8;
Specific embodiment 1, DOI=3227pixels, FOV >=32 degree (3.55mm half diagonal angle).
λ like this, EFL, F, FOV requires the optical imagery object lens 7 of design, specific embodiment 1 specifically is shown in Fig. 4 ~ Fig. 8 by the design of ZEMAX optical simulation software, comprises topological design figure, relatively the field luminance design drawing, visual field diffraction MTF design drawing, the curvature of field and distortion design drawing, some diffusion design figure.
The remarks explanation: according to λ, EFL, F, FOV requires the optical imagery object lens 7 of design, can obtain Fig. 4 ~ Fig. 8 with " ZEMAX design " (a kind of optical simulation software), the purpose of respective design figure is the design of checking above-mentioned parameter, and the design that can obtain parameter is feasible concluding content.
Specific embodiment 1 image imaging sensor 8 has photoelectricity conversion quantum efficiency OE_TE=1.4V/ (mW/cm
2* s),
Specific embodiment 1 image imaging sensor 8 has ADC conversion resolution ADC_T=2
10lSB/V, LSB is ADC resolution least significant bit (LSB), now, and N=10, N is ADC resolution number of significant digit;
Specific embodiment 1 image imaging sensor 8 has when analog gain GAIN=1.0, signal to noise ratio snr > 38db.
The system-level photosignal that then specific embodiment 1 is optimized produces and disposal route comprises following content:
2), define the system-level photosignal generation of original unit picture element brightness value Yraw
Yraw=ET * GAIN * E * OE_TE * ADC_T <8>
The time shutter exposure time that wherein said ET is image imaging sensor 8 or integral time integration time, guarantee to control ET<1/60 second;
The analog gain that wherein said GAIN is image imaging sensor 8, analog gain GAIN controls and must guarantee the signal to noise ratio snr produced > 36db;
Wherein said E is formula<2>middle greatest irradiation rate or the radiant illumination controlled apart from the near infrared illumination source intensity I of WOD place acceptance at given working substance defined, guarantee control E<10mW/cm
2.
3), definition iris region pixel intensity statistical estimation value Ysp:
Ysp=S(Yraw)
Wherein said S is iris region pixel intensity statistical estimation function, the method that described pixel intensity statistical estimation function adopts comprises: pixel intensity statistics with histogram, pixel intensity frequency spectrum statistics, pixel intensity mean value, the pixel intensity weighted mean value, pixel intensity intermediate value etc.
4), ET, GAIN, the E Photoelectric Signal Processing is controlled, and realizes that iris region pixel intensity statistical estimation value Ysp is in default [Yll, Yhl] brightness range:
Yll≤Ysp≤Yhl
Wherein said Yll is iris region pixel intensity lower limit, and Yhl is the iris region pixel intensity upper limit;
The remarks explanation: Yll, Yhl can arrange arbitrarily the upper limit, lower limit according to actual needs.Representative value is:
Yll=2
9LSB-2
4 LSB
=
496LSB Yhl =2
9 LSB +2
4 LSB=528LSB。
It is according to step 2 that described Photoelectric Signal Processing is controlled) the middle formula defined<8 > linear product control relation, change ET, GAIN, the E photosignal realizes that original unit picture element brightness value Yraw changes, and makes corresponding iris region pixel intensity statistical estimation value Ysp meet the pre-conditioned of Yll≤Ysp≤Yhl;
In theory, during the Yll=Yhl condition, Ysp can obtain constant iris region pixel intensity, but during practical application, consider as the external complex image-forming condition, image imaging sensor inconsistency, near infrared illumination source is changed by the conditions such as temperature and electric current, easily produces feedback oscillation.Therefore it is rational setting bound.
Further in order to accelerate and to simplify Photoelectric Signal Processing and control, specific embodiment 1, ET, GAIN, E can fix wherein 1 controlled condition, adjusts other 2 controlled conditions, maybe can fix wherein 2 controlled conditions, adjusts other 1 controlled condition.
5), pixel brightness value Yraw carries out original signal GAMMA and proofread and correct to process, and keeps original value, keeps the GAMMA=1.0 linear relationship:
Ygamma=GAMMA（Yraw）=Yraw
GAMMA=1.0=Yraw
Specific embodiment 1 must be proofreaied and correct and process through above-mentioned original signal GAMMA=1.0, reason is all to give tacit consent to the correction processing of original signal having been carried out to GAMMA=0.45 before current image imaging sensor is exported in inside, the present invention studies by experiment and thinks that design GAMMA=1.0 linear relationship more can guarantee iris and sclera, iris and pupil, the iris texture three has high-contrast and is conducive to further carry out the Luminance Distribution of iris recognition.
Under identical condition, Fig. 9 proofreaies and correct through original signal GAMMA=0.45 the image of processing, Figure 10 proofreaies and correct through original signal GAMMA=1.0 the image of processing, by comparing iris and sclera, iris and pupil, iris texture three contrast confirms that GAMMA=1.0 proofreaies and correct the image of processing and obviously is better than GAMMA=0.45 and proofreaies and correct the image of processing, and the Luminance Distribution scope is wider has a larger variation range.
6), Yout is processed and exported to the pixel brightness value Yraw contrast adaptive control based on iris region pixel intensity statistical estimation value Ysp
Yout=Contrast*(Yraw-Ysp)+Ysp
1.0≤Contrast≤2.0
Yout=2
10-1 if Yout>2
10-1；
Yout=0 if Yout<0；
Wherein said Contrast is the contrast adaptive control coefficient based on iris region pixel intensity statistical estimation value Ysp.
The benchmark that employing is spent adaptive control as a comparison based on iris region pixel intensity statistical estimation value Ysp can improve assurance iris and sclera the most in essence, iris and pupil, the iris texture three has high-contrast and is conducive to further optimize the Luminance Distribution of iris recognition.
Specific embodiment 1, Contrast=1.25, the final exportable iris of Yout and sclera after above-mentioned signal is processed, iris and pupil, the high-quality iris image of iris texture three high-contrast.
Under identical condition, Figure 11 is the image of not processing through the contrast adaptive control, Figure 12 is the image of processing through Contrast=1.25 contrast adaptive control, by comparing iris and sclera, iris and pupil, iris texture three contrast confirms that the image of processing through Contrast=1.25 contrast adaptive control obviously is better than the image of not processing through the contrast adaptive control.
Embodiment 2,
Fig. 3 has described the composition structural map of specific embodiment 2 iris imaging devices, and it comprises with lower component and forming:
Iris imaging device 1; left eye 2L; left eye virtual image 2L'; right eye 2R; right eye virtual image 2R'; near infrared illumination source left side LED 3L; near infrared illumination source right side LED 3R, near infrared illumination source left side transmission window 4L, near infrared illumination source right side transmission window 4R; near infrared light optical light filter protecting window 5; near infrared light optical light filter 6, iris of left eye optical imagery object lens 7L, iris of right eye optical imagery object lens 7R; iris of left eye image imaging sensor 8L, iris of right eye image imaging sensor 8R.
The near infrared light optical light filter protecting window 5 of iris imaging device 1, be positioned at iris imaging device 1 the most front outside surface for the protection of whole iris imaging device, guarantees to use under various different operating environment.
The near infrared illumination source left side LED 3L of iris imaging device 1, near infrared illumination source right side LED 3R lays respectively at the left and right sides of iris imaging device 1, its outside is respectively by near infrared illumination source left side transmission window 4L, and near infrared illumination source right side transmission window 4R covers and disperses (radiation) angle for what control near infrared illumination source.
The near infrared light optical light filter 6 of iris imaging device 1, iris of left eye optical imagery object lens 7L, iris of left eye image imaging sensor 8L, install at same optic axis center successively, is used to form basic iris of left eye near infrared imaging light path.
The near infrared light optical light filter 6 of iris imaging device 1, iris of right eye optical imagery object lens 7R, iris of right eye image imaging sensor 8R, install at same optic axis center successively, is used to form basic iris of right eye near infrared imaging light path.
Near infrared light optical light filter 6 is for reflecting from external environment condition left eye 2L, the visible ray of right eye 2R forms left eye virtual image 2L', right eye virtual image 2R', transmission is near infrared illumination source left side LED 3L, near infrared illumination source right side LED 3R is reflected in left eye 2L, and the near infrared light of right eye 2R forms effective near infrared imaging light.
Near infrared light optical light filter 6, effect one be the invalid veiling glare of filtering interfering imaging so that only the effective near infrared light of transmission improve image quality, effect two is the left eye virtual image 2L' by forming, and right eye virtual image 2R' realizes that the user independently locates in the optic axis center of iris imaging device 1.
Iris of left eye optical imagery object lens 7L converges the image space focal plane of optical focus to iris of left eye image imaging sensor 8L for effective near infrared imaging light being formed to the physics refraction.
Iris of right eye optical imagery object lens 7R converges the image space focal plane of optical focus to iris of right eye image imaging sensor 8R for effective near infrared imaging light being formed to the physics refraction.
At first be different from the demand analysis of specific embodiment 1, in specific embodiment 2, iris of left eye optical imagery object lens 7L and iris of left eye image imaging sensor 8L energy imaging left eye 2L, iris of right eye optical imagery object lens 7R and iris of right eye image imaging sensor 8R and right eye 2R, owing to adopting 2 road imaging optical path designs, image imaging sensor 8L, 8R is chosen as 0.3Mpixels 640*480 pixel, 1Mpixels 1280*800 pixel, 1.2Mpixels 1280*960 pixel, 1.3Mpixels 1280*1024 pixel resolution, as specific embodiment 2 adopts the physical size representative value of the image imaging sensor units pixel of 0.3Mpixels 640*480 pixel resolution, be as 6um, its photoelectricity conversion quantum efficiency of physical size OE_TE of technology 6um unit picture element is relative with SNR very high at present, therefore rear burnt optical imagery objective lens design is fixed in the employing of specific embodiment 2.
Next, in actual applications under objective given demand condition, the iris imaging device according at given working substance apart from WOD as 20cm(working object distance) condition under, specific embodiment 2 describes how to carry out system-level photoelectricity optimal design in detail.
1), define system level photoelectric parameter λ, FWHM, I, EFL, F, FOV, OE_TE, ADC_T, GAIN, SNR, ET
The transmissivity peak wavelength of near infrared light optical light filter 6 is set near infrared illumination source 3L, 3R equivalence peak wavelength λ,
Half maximal value all-wave FWHM(Full Wave at Half Maximum of near infrared light optical light filter 6) be more than or equal near infrared illumination source 3L, the spectrum FWHM that 3R produces,
Wherein said equivalent peak wavelength λ=∑ h
iλ
i,∑ h
i=1
<1>
h
iradiation intensity normalization coefficient near infrared illumination source spectrum; λ
ifor near infrared illumination source spectrum, wavelength coverage 750nm-880nm;
Image imaging sensor 8 adopts color-type, single band 850nm, and FWHM=60nm,
Equivalence peak wavelength λ=850nm, FWHM=60nm.
The radiation intensity I(mW/sr of near infrared illumination source, the every sterad of milliwatt):
I=E*WOD
2 E<10mW/cm
2 <2>
Wherein:
e is greatest irradiation rate or the radiant illumination apart from the near infrared illumination source of WOD place acceptance at given working substance;
The equivalent focal length value EFL(Equivalent focal length of specific embodiment 2 optical imagery object lens 7) have:
EFL=WOD*β/(1+β) <3>
Wherein: WOD is given working substance distance;
β is iris image space and object space resolution ratio
β=SOP*POI/SOI <4>
Wherein said
SOP(size of pixel) be the physical size of image imaging sensor units pixel;
POI is the default iris diameter pixel dimension in image space resolution, and a nearlyer step POI scope is 160-320pixels;
SOI is the default iris mean diameter physical size in object space resolution, and a nearlyer step SOI scope is 9-13mm;
In specific embodiment 2, SOP=6um/pixel, POI=220pixels, SOI=11mm,
β=0.12,EFL=21.4mm。
The aperture F value of optical imagery object lens 7 (or relative optical aperture inverse) has:
F=EFL/D <5>
0.5*SOP/(1.22*λ)≤F≤2.0*SOP/(1.22*λ) <6>
The pupil that wherein said D is the optical imagery object lens or the diameter of clear aperature;
Selection approaches upper limit f-number F=10, D=2.14mm, and so the logical light quantity of design can guarantee image imaging sensor 8 image quality, again can extended depth of field.
The field angle FOV(Field of View of optical imagery object lens 7) have:
FOV≥2*arctan(（DOI*SOP)/(2*EFL)) <7>
The diagonal pixels quantity that wherein said DOI is the image imaging sensor;
DOI=800pixels,, FOV >=13 degree (2.4mm half diagonal angle).
Image imaging sensor 8 has photoelectricity conversion quantum efficiency OE_TE=16V/ (mW/cm
2* s);
Image imaging sensor 8 has ADC conversion resolution ADC_T=2
12lSB/V, LSB is ADC resolution least significant bit (LSB), N is ADC resolution number of significant digit, N=12;
Image imaging sensor 8 has when analog gain GAIN=1.0, signal to noise ratio snr > 50db.
The system-level photosignal that then specific embodiment 2 is optimized produces and disposal route comprises:
2), define the system-level photosignal generation of original unit picture element brightness value Yraw
Yraw=ET * GAIN * E * OE_TE * ADC_T <8>
The time shutter exposure time that wherein said ET is the image imaging sensor or integral time integration time, guarantee to control ET<1/100 second;
The analog gain that wherein said GAIN is the image imaging sensor, analog gain GAIN controls and must guarantee the signal to noise ratio snr produced > 38db;
Wherein said E is formula<2>middle greatest irradiation rate or the radiant illumination controlled apart from the near infrared illumination source intensity I of WOD place acceptance at given working substance defined, guarantee control E<10mW/cm
2;
3), definition iris region pixel intensity statistical estimation value Ysp
Ysp=S(Yraw)
Wherein said S is iris region pixel intensity statistical estimation function, the method that described pixel intensity statistical estimation function adopts comprises: pixel intensity statistics with histogram, pixel intensity frequency spectrum statistics, pixel intensity mean value, the pixel intensity weighted mean value, pixel intensity intermediate value etc.;
4), ET, GAIN, the E Photoelectric Signal Processing is controlled, and realizes that iris region pixel intensity statistical estimation value Ysp is in default [Yll, Yhl] brightness range
Yll≤Ysp≤Yhl
Wherein said Yll is iris region pixel intensity lower limit, and Yhl is the iris region pixel intensity upper limit;
Described Photoelectric Signal Processing is controlled as the formula according to definition in step 2<8 > linear product control relation, change ET, GAIN, the E photosignal realizes that original unit picture element brightness value Yraw changes, and makes corresponding iris region pixel intensity statistical estimation value Ysp meet the pre-conditioned of Yll≤Ysp≤Yhl;
In theory, during the Yll=Yhl condition, Ysp can obtain constant iris region pixel intensity, but during practical application, consider as the external complex image-forming condition, image imaging sensor inconsistency, near infrared illumination source is changed by the conditions such as temperature and electric current, easily produces feedback oscillation.Therefore it is rational setting bound.
Further in order to accelerate and to simplify Photoelectric Signal Processing and control, in specific embodiment 2, ET, GAIN, E can fix wherein 1 controlled condition, adjusts other 2 controlled conditions, maybe can fix wherein 2 controlled conditions, adjusts other 1 controlled condition;
5), pixel brightness value Yraw carries out original signal GAMMA and proofread and correct to process, and keeps original value, keeps the GAMMA=1.0 linear relationship
Ygamma=GAMMA（Yraw）=Yraw
GAMMA=1.0=Yraw
Specific embodiment 2 must be proofreaied and correct and process through above-mentioned original signal GAMMA=1.0, reason is all to give tacit consent to the correction processing of original signal having been carried out to GAMMA=0.45 before current image imaging sensor is exported in inside, the inventor studies by experiment and thinks that design GAMMA=1.0 linear relationship more can guarantee iris and sclera, iris and pupil, the iris texture three has high-contrast and is conducive to further optimize the Luminance Distribution of iris recognition.
6), Yout is processed and exported to the pixel brightness value Yraw contrast adaptive control based on iris region pixel intensity statistical estimation value Ysp
Yout=Contrast*(Yraw-Ysp)+Ysp
1.0≤Contrast≤2.0
Yout=2
12-1 if Yout>2
12-1；
Yout=0 if Yout<0；
Wherein said Contrast is the contrast adaptive control coefficient based on iris region pixel intensity statistical estimation value Ysp.
The benchmark that employing is spent adaptive control as a comparison based on iris region pixel intensity statistical estimation value Ysp can improve assurance iris and sclera the most in essence, iris and pupil, the iris texture three has high-contrast and is conducive to further optimize the Luminance Distribution of iris recognition.
Specific embodiment 2, Contrast=1.5, the final exportable iris of Yout and sclera after above-mentioned signal is processed, iris and pupil, the high-quality iris image of iris texture three high-contrast.
Finally, it is also to be noted that, what more than enumerate is only several specific embodiments of the present invention.Obviously, the invention is not restricted to above embodiment, many distortion can also be arranged.All distortion that those of ordinary skill in the art can directly derive or associate from content disclosed by the invention, all should think protection scope of the present invention.
Claims (2)
1. for the system-level photoelectricity Optimization Design of iris imaging device, it is characterized in that: at given working substance under the condition of WOD, system-level optimal design comprises the optical imagery object lens, near infrared light optical light filter and near infrared illumination source, image imaging sensor and system-level photosignal produce and disposal route, comprise the following steps successively:
1), define system level photoelectric parameter λ, FWHM, I, E, EFL, F, FOV, OE_TE, ADC_T, GAIN, SNR, ET
The transmissivity peak wavelength of near infrared light optical light filter is set near infrared illumination source equivalence peak wavelength λ,
Half maximal value all-wave FWHM of near infrared light optical light filter is more than or equal to the spectrum FWHM that near infrared illumination source produces,
Wherein said equivalent peak wavelength λ=∑ h
iλ
i,∑ h
i=1
<1>
,
h
ifor the radiation intensity normalization coefficient of near infrared illumination source spectrum, λ
ifor near infrared illumination source spectrum, wavelength coverage 750nm-880nm;
The radiation intensity I(mW/sr of near infrared illumination source, the every sterad of milliwatt):
I=E*WOD
2 E<10mW/cm
2 <2>
Wherein said E is greatest irradiation rate or the radiant illumination apart from the near infrared illumination source of WOD place acceptance at given working substance;
The equivalent focal length value EFL of optical imagery object lens has:
EFL=WOD*β/(1+β) <3>
Wherein: WOD is given working substance distance;
β is iris image space and object space resolution ratio
β=SOP*POI/SOI <4>
Wherein said
The physical size that SOP is image imaging sensor units pixel;
POI is the default iris diameter pixel dimension in image space resolution,
SOI is the default iris mean diameter physical size in object space resolution;
The aperture F value of optical imagery object lens or relative optical aperture inverse have:
F=EFL/D <5>
0.5*SOP/(1.22*λ)≤F≤2.0*SOP/(1.22*λ) <6>
The pupil that wherein said D is the optical imagery object lens or the diameter of clear aperature;
The field angle FOV of optical imagery object lens has:
FOV≥2*arctan(（DOI*SOP)/(2*EFL)) <7>
The diagonal pixels quantity that wherein said DOI is the image imaging sensor;
The image imaging sensor has photoelectricity conversion quantum efficiency OE_TE>1V/ (mW/cm
2* s);
The image imaging sensor has ADC conversion resolution ADC_T=2
nlSB/V, wherein said LSB is ADC resolution least significant bit (LSB), N is ADC resolution number of significant digit, N>=8;
The image imaging sensor has when analog gain GAIN=1.0, signal to noise ratio snr > 38db;
2), define the system-level photosignal generation of original unit picture element brightness value Yraw
Yraw=ET * GAIN * E * OE_TE * ADC_T <8>
The time shutter exposure time that wherein said ET is the image imaging sensor or integral time integration time, must guarantee control ET<1/30s second;
The analog gain that wherein said GAIN is the image imaging sensor, analog gain GAIN controls and must guarantee the signal to noise ratio snr produced > 36db;
Wherein said E is formula<2>middle greatest irradiation rate or the radiant illumination apart from the near infrared illumination source I control of WOD place acceptance at given working substance defined, must assurance control E<10mW/cm
2;
3), definition iris region pixel intensity statistical estimation value Ysp
Ysp=S(Yraw)
Wherein said S is iris region pixel intensity statistical estimation function, the method that described pixel intensity statistical estimation function adopts comprises: pixel intensity statistics with histogram, pixel intensity frequency spectrum statistics, pixel intensity mean value, the pixel intensity weighted mean value, pixel intensity intermediate value etc.;
4), ET, GAIN, the E Photoelectric Signal Processing is controlled, and realizes that iris region pixel intensity statistical estimation value Ysp is in default [Yll, Yhl] brightness range:
Yll≤Ysp≤Yhl
Wherein said Yll is iris region pixel intensity lower limit, and Yhl is the iris region pixel intensity upper limit;
Described Photoelectric Signal Processing is controlled as the formula according to definition in step 2<8 > linear product control relation, change ET, GAIN, the E photosignal realizes that original unit picture element brightness value Yraw changes, and makes corresponding iris region pixel intensity statistical estimation value Ysp meet the pre-conditioned of Yll≤Ysp≤Yhl;
5), pixel brightness value Yraw carries out original signal GAMMA and proofread and correct to process, and keeps original value, keeps the GAMMA=1.0 linear relationship
Ygamma=GAMMA（Yraw）=Yraw
GAMMA=1.0=Yraw
6), Yout is processed and exported to the pixel brightness value Yraw contrast adaptive control based on iris region pixel intensity statistical estimation value Ysp
Yout=Contrast*(Yraw-Ysp)+Ysp
1.0≤Contrast≤2.0
Yout=2
N-1 if Yout>2
N-1；
Yout=0 if Yout<0；
Wherein said Contrast is the contrast adaptive control coefficient based on iris region pixel intensity statistical estimation value Ysp, and N is ADC resolution number of significant digit.
2. according to claim 1 for the system-level photoelectricity Optimization Design of iris imaging device, it is characterized in that:
When the image imaging sensor adopts monochrome type, equivalence peak wavelength λ is chosen as two waveband or single band, and described two waveband comprises 750-810nm and two wave bands of 810-880nm, FWHM > 30nm, described single band comprises 780-850nm, FWHM > 30nm;
When the image imaging sensor adopts color-type, equivalent peak wavelength λ is chosen as single band, and described single band is 810-880nm, FWHM > 30nm.
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Effective date of registration: 20171120 Address after: Room A, building 413A, emerging industry incubation center, Zhangjiagang Free Trade Zone, Suzhou, Jiangsu 215634, China Patentee after: SUZHOU SIYUAN KEAN INFORMATION TECHNOLOGY Co.,Ltd. Address before: 550022, Guiyang high tech Development Zone, Guizhou Province, West research and development base, building 3, 14 floor Patentee before: Kweiyang Ke An Science and Technology Ltd. |
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| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Ni Weimin Inventor after: Chen Ping Inventor before: Shen Hongquan |