WO2016058528A1 - Mobile terminal front-facing and facial/iris recognition integrated optoelectronic imaging system and method - Google Patents

Abstract

Provided in the present invention are a mobile terminal front-facing and iris recognition integrated optoelectronic imaging system and method. The system is provided in a downward sequence along the optical axis of the imaging system with an optical filter, an optical imaging lens, a fixed mounting base for the optical imaging lens, an image sensor, an illumination light source, and a fixed mounting substrate for the imaging system. A mobile terminal mainboard is also provided on the fixed mounting substrate for the imaging system. An LED current driver and a processor chip are integrated on the mobile terminal mainboard.

Description

Mobile terminal front and face/iris recognition integrated photoelectric imaging system and method

Priority statement

This application claims the priority of the Chinese patent filed on October 15, 2014, the Chinese Patent Office, application number 201410546317.5, and the invention titled "Mobile Terminal Preamplifier and Iris Recognition Integrated Photoelectric Imaging System and Method". The citations are incorporated herein by reference.

Technical field

The invention relates to the field of biometric optoelectronics, in particular to an integrated photoelectric imaging system and method for mobile terminal pre- and iris recognition for high security.

Background technique

Mobile terminals include smart phones, tablets, wearable devices, etc. In the current trend of information technology mobileization, mobile terminal devices are inevitably the most widely used devices in the future.

At present, mobile terminals in real-world applications have been widely used in mobile secure payment, account secure login, and online banking, such as the application of balance treasure, WeChat, and bank account management, although in their use, for life. It has brought great convenience, but a new type of economic crime caused by the weak security features of mobile terminals has gradually emerged.

In mobile terminals, the conventional method for identity verification in the prior art is password input, but the means of identity verification is very low in security, and only a simple virus program needs to be implanted on the mobile terminal to leak the password. , causing corresponding losses. In order to solve this problem, the biometric identification method is used for mobile terminal security identity authentication; for example, the fingerprint recognition technology developed by Apple based on AuthenTec, which is applied to mobile phone terminals, greatly improves the mobile terminal. Identity verification security; however, in the process of fingerprint technology recognition, since the fingerprint is static, although unique, it is extremely easy to obtain fingerprint information, and even be copied, so with the use of fingerprint technology on mobile terminals More and more extensive, its security will also decline accordingly, so iris recognition, which is more advantageous in terms of security, is a very effective method to solve the security authentication process of mobile terminals, and the iris recognition system is an existing creature. The most accurate in recognition.

At present, in all the mobile terminal iris recognition system technologies and products, the integration of the front photoelectric imaging system and the iris recognition photoelectric imaging system for the face self-photographing function is not realized. However, if the face self-timer function is integrated with the front photoelectric imaging system and the iris recognition photoelectric imaging system Separate implementation, the cost is greatly increased, and the volume of the more important mobile terminals cannot provide the installation space for accommodating two separate independent optical imaging systems.

In addition, although iris recognition is more advantageous than fingerprint face recognition in terms of security of anti-counterfeiting, if it is applied to important occasions such as mobile phone large-value payment, it is still necessary to further upgrade the security technology of anti-counterfeiting and living detection. To eliminate the threat of security risks. After all, biometrics itself is designed to be safe, and its own security is the most basic and important.

Furthermore, high-security mobile terminal pre- and iris recognition integrated optoelectronic imaging systems need to address the following serious problems:

1. Integrated photoelectric imaging system for front-end and iris recognition in mobile terminal applications, which integrates the front photoelectric imaging system and the iris recognition photoelectric imaging system that satisfy the face self-timer function, and its volume is controlled within 8.5mm*8.5mm*6mm.

2. The integrated photoelectric imaging system for front-end and iris recognition in mobile terminal applications requires a set of high-security anti-counterfeiting living body detection methods to ensure the safety of biometric identification itself.

3. For the front-end and iris recognition integrated optoelectronic imaging system in mobile terminal applications, it is necessary to guide the theoretical derivation of the conversion relationship of the photoelectric imaging system design.

4. The integrated optoelectronic imaging system for front-end and iris recognition in mobile terminal applications requires a significant cost reduction, and the cost can be reduced to less than $10 to be applied on a large scale.

Solving the above problems is the biggest challenge currently facing.

Summary of the invention

The technical problem to be solved by the present invention provides a mobile terminal front-end and iris recognition integrated photoelectric imaging system for high security.

In order to solve the above technical problem, the present invention provides a mobile terminal front and face/iris recognition integrated photoelectric imaging system, the system comprising a processor chip, an LED current driver, an LED illumination source, an optical filter, and an optical An imaging lens, an image sensor; wherein the imaging array of the image sensor is configured to have a received RGB-IR wavelength channel; the LED illumination source is configured to have a matching with an image sensor RGB-IR imaging wavelength channel a range of radiation wavelengths; the optical filter being configured to have a filtered wavelength range that matches an image sensor RGB-IR imaging wavelength channel; the optical imaging lens being configured to have an image sensor RGB-IR imaging wavelength channel that matches a focus wavelength range; the processor chip is configured to drive an image sensor setting, control image pixel value data output by the image sensor RGB-IR wavelength channel imaging array, and drive control LED current driver; the LED current driver is Configured to drive and control the radiation intensity of the LED illumination source, the radiation angle Set, and radiation time.

According to another aspect of the present invention, a mobile terminal front and face/iris recognition integrated photoelectric imaging method is provided; comprising the following steps: 1 processor chip controls LED current driver to drive LED illumination source to generate imaging wavelength continuous or synchronous Pulse mode radiation; 2 After imaging wavelength filtering and physical refraction focusing, the image sensor's imaging array independently receives the imaging wavelength channel for global frame mode or rolling line mode reset integration and readout; 3 processor chip acquires the same imaging wavelength in the imaging array The raw RAW pixel data of the image output of the channel output; the 4 processor chip drives the image sensor and the LED illumination source and the optical imaging lens to focus and control the feedback according to the original RAW pixel data of the imaged image and the pixel unit photoelectric conversion relationship; 5 processor chip output image.

Summarizing the above description, the present invention realizes a high security mobile terminal pre- and iris recognition integrated photoelectric imaging system and a method thereof:

1. Front-end and iris recognition integrated photoelectric imaging system realizes the integration of front photoelectric imaging system and iris recognition photoelectric imaging system that satisfies the face self-timer function, and its volume is controlled within 8.5mm*8.5mm*6mm.

2, front and iris recognition integrated photoelectric imaging system, to achieve a set of high-security anti-counterfeiting living body detection method to ensure the safety of biometric identification itself.

3. Pre-position and iris recognition integrated optoelectronic imaging system to realize the theoretical derivation to guide the conversion relationship of optoelectronic imaging system design.

4, front and iris recognition integrated optoelectronic imaging system, to achieve significant cost reduction, cost can be reduced to less than 10 dollars can be applied on a large scale.

DRAWINGS

The specific embodiments of the present invention are further described in detail below with reference to the accompanying drawings.

1 is a general structural view of a front-end and iris recognition integrated photoelectric imaging system of the present invention;

2 is a schematic diagram of each imaging pixel unit of the image sensor 105 imaging array of FIG. 1 independently receiving RGB-IR wavelength channels.

FIG. 3 is a schematic diagram of the reset integration and readout circuit of the image sensor 105 of FIG. 2 for resetting the integrated and readout charge (electron) voltages.

4 is a schematic diagram showing the arrangement of the pixel unit 4 direction 2*2 cross spacing of the imaging array of the RGB-IR wavelength channel of the image sensor 105 of FIG. 2;

5 is a schematic diagram of interpolated values of adjacent pixel raw RAW data in four directions between pixels of the same wavelength channel in the imaging array of the image sensor 105 of FIG. 2.

Figure 6 is a schematic illustration of a contrast region defining an iris image of the present invention.

Figure 7 is a schematic illustration of the diameter of the pupil and iris defining the iris image of the present invention.

Figure 8 is a schematic illustration of optical reflection points at different locations of the cornea defining an iris image of the present invention.

Fig. 9 is a schematic view showing the degree of physiological activity characteristics of the eyelids which are produced by the physiological movement of the eyeball according to the present invention.

Figure 10 is a schematic illustration of the degree of physiological activity characteristics of off-axis strabismus defined by the physiological movement of the eyeball of the present invention.

detailed description

Embodiment 1 provides a mobile terminal front-end and face/iris recognition integrated photoelectric imaging system and method. The method includes a method for pre-interpolating between the original RAW data pixels of the same wavelength channel used in the pre-photoelectric imaging method, the iris recognition photoelectric imaging method, or the iris photoelectric imaging method or the iris recognition photoelectric imaging method, and the iris Anti-counterfeiting living body detection method.

As shown in Figure 1, the system is provided with optical filters (101 or 104) along the imaging system optical axis 100 (for filtering imaging wavelengths), optical imaging lens 102 (for physical refractive focused imaging wavelengths), optical imaging lens Fixed mount 103 (for fixed mounting of the optical imaging lens), image sensor 105 (for photoelectric conversion output imaging image), illumination source 106 (including RGB-LED illumination source 106 RGB and IR-LED illumination source 106 IR; RGB-LED Illumination source 106RGB for generating RGB imaging wavelength radiation for a front optoelectronic imaging system, IR-LED illumination source 106IR for generating IR imaging wavelength radiation for an iris recognition optoelectronic imaging system, and imaging system fixed mounting substrate 107 (for providing front-end And the iris recognition photoelectric imaging system fixed mounting carrier), the imaging system fixed mounting substrate 107 is further provided with a mobile terminal motherboard 110 (for implementing the mobile terminal function circuit carrier), and the LED current driver 108 is integrated on the mobile terminal motherboard 110 (for Drive control LED illumination source radiation intensity, radiation angular position, and radiation time) and processor chip 109 (for driving control LED current driver and diagram Like a sensor).

The integrated front and iris recognition optoelectronic imaging system of the first embodiment of the present invention includes an optical path for the front optoelectronic imaging system and an optical path for the iris recognition optoelectronic imaging system; the optical path of the front optoelectronic imaging system includes the following:

The RGB-LED illumination source 106 RGB radiates the RGB imaging wavelength, the optical filter (101 or 104) filters the RGB imaging wavelength, the optical imaging lens 102 physically refracts the focused RGB imaging wavelength, and the imaging array of the image sensor 105 independently receives the RGB wavelength channel.

The optical pathways of the iris recognition optoelectronic imaging system include the following:

The IR-LED illumination source 106IR radiates the IR imaging wavelength, the optical filter (101 or 104) filters the IR imaging wavelength, the optical imaging lens 102 physically refracts the focused IR imaging wavelength, and the imaging array of the image sensor 105 independently receives the IR wavelength channel.

In a specific embodiment 1 of the present invention, the imaging array of the image sensor 105 is configured as an RGB-IR wavelength channel having an independent receiving function; the LED illumination source (the LED illumination source 106RGB and the LED illumination source 106IR-LED) are configured to have The RGB-IR imaging wavelength channels of the image sensor 105 are matched to each other in a range of radiation wavelengths; the optical filter (101 or 104) is configured to have a filtering wavelength range that matches the image sensor 105 RGB-IR imaging wavelength channel; the optical imaging lens 102 Is configured to have an RGB-IR imaging wavelength with image sensor 105 The channels are matched to each other in a focused wavelength range; the processor chip 109 is configured to drive the image sensor 105 settings, i.e., control image pixel value data output by the RGB-IR wavelength channel imaging array of the image sensor 105, and drive control LED current driver 108 The LED current driver 108 is configured to drive control of the LED illumination source (106 RGB and 106 IR-LED) radiation intensity, radiation angular position, and radiation time.

The optical imaging lens 102 described above is configured as a fixed focal length lens, and may be employed in, for example, a liquid drive lens, a liquid crystal drive lens, a VCM voice coil drive lens, a MEMS drive lens, an EDOF wavefront phase modulation lens, or a wafer level array microlens. Any one.

The imaging wavelength of the present invention includes an RGB imaging wavelength of 400-700 nm and an IR imaging wavelength of 800-900 nm; the imaging wavelength in this embodiment includes an RGB imaging wavelength of 400-650 nm and an IR imaging wavelength of 750-850 nm. Embodiment 1 of the present invention, by way of example, has an IR imaging wavelength range, which is essentially a bandwidth characteristic, which can also be equivalently interpreted as being represented by an imaging wavelength center and a half-peak bandwidth (FWHM), such as 800-900 nm. The range can be expressed as a central wavelength of 850 nm ± 30 nm half-peak bandwidth. Further, as an example of the variation of the imaging wavelength range, a narrow band may be used as a center wavelength of 850 nm ± 15 nm half-peak bandwidth.

The front photoelectric imaging system adopts RGB imaging wavelength, and the focusing work object distance is at least 30-100 cm; the iris recognition photoelectric imaging system adopts IR imaging wavelength, and the focusing work object distance WD is at least 10-30 cm.

The iris recognition optoelectronic imaging system has the following optical imaging requirements:

The imaging wavelength WI of the iris recognition photoelectric imaging system satisfies: 800 nm ≤ WI ≤ 900 nm or 750 nm ≤ WI ≤ 850 nm;

The focused work object distance WD of the iris recognition photoelectric imaging system satisfies: 10cm ≤ WD ≤ 30cm;

The pixel spatial resolution PSR (pixel spatial resolution) of the iris recognition photoelectric imaging system should satisfy: PSR ≥ 13 pixel/mm;

The optical magnification OM (optical magnification) of the iris recognition photoelectric imaging system should satisfy: OM=PS*PSR;

Wherein, the PS described above is a physical scale of each imaging pixel unit of the image sensor 105; the PSR is a pixel spatial resolution of the iris recognition photoelectric imaging system;

The optical spatial resolution of image of plane (ISRI) should be satisfied in the image plane: when the modulation transfer function is 60% (MTF=0.6), 1/(4*PS)≤OSRI≤ 1/(2*PS) lp/mm (line pair per mm).

The front optoelectronic imaging system has the following optical imaging requirements:

The imaging wavelength WI of the front photoelectric imaging system satisfies: 400 nm ≤ WI ≤ 700 nm or 400 nm ≤ WI ≤ 650 nm;

The focusing work distance WD of the front photoelectric imaging system satisfies: 30cm ≤ WD ≤ 100cm;

The pixel spatial resolution PSR (pixel spatial resolution) of the front photoelectric imaging system should satisfy: PSR≤4pixel/mm;

The optical magnification of OM (optical magnification) of the front photoelectric imaging system should satisfy: OM=PS*PSR;

Wherein, the PS described above is a physical scale of each imaging pixel unit of the image sensor 105; the PSR is a pixel spatial resolution of the front photoelectric imaging system;

The optical spatial resolution of image of plane (OSRI) should be satisfied in the image plane: when the modulation transfer function is 60% (MTF=0.6), 1/(4*PS)≤OSRI≤ 1/(2*PS) lp/mm (line pair per mm).

In the present embodiment, the imaging array of the image sensor 105 independently receives each of the imaging pixel unit structures of the RGB-IR wavelength channel as shown in FIG.

The imaging array of image sensor 105 independently receives each imaging pixel unit of the RGB-IR wavelength channel, including: a microlens 201 for converging photons 200; an independent RGB-IR wavelength channel filter for filtering photons 200 Optical layer 202 (RGB-IR filter); semiconductor photodiode 203 for capturing photon 200 of incident wavelength for photoelectric quantum conversion; reset integration and readout for reset integration and readout charge (electron) voltage Circuit 204; an analog to digital converter ADC 205 for converting the voltage value to a quantized value. Microlens 201, independent RGB-IR wavelength channel filter layer 202 (RGB-IR filter), semiconductor photodiode 203 (photo diode), reset integration and readout circuit 204, analog-to-digital converter ADC205 from top to bottom The lower portion is disposed in sequence; the incident photon 200 sequentially passes through the microlens 201, the independent RGB-IR wavelength channel filter layer 202, and the semiconductor photodiode 203.

The micro lens 201 has a convergent photon efficiency or a fill factor FF ≥ 95%; the RGB-IR wavelength channel filter layer 202 (RGB-IR filter) is used for filtering to generate independent RGB-IR wavelength channels; In a specific embodiment 1 of the present invention, the B wavelength channel: 400 nm - 500 nm; the G wavelength channel: 500 nm - 600 nm; the R wavelength channel: 600 nm - 700 nm; the IR wavelength channel: 800 nm - 900 nm; or further, the B wavelength channel: 400 nm - 500 nm; G wavelength channel: 500 nm - 590 nm; R wavelength channel: 590 nm - 670 nm; IR wavelength channel: 750 nm - 850 nm. The filter layer 202 has RGB-IR channel wavelength distribution functions FR(λ), FG(λ), FB(λ), FIR(λ); the semiconductor photodiode 203 has electrons formed at the semiconductor PN junction by receiving photons 200 of incident wavelengths. - Hole pairs produce photoelectric quantum conversion.

The semiconductor photodiode 203 receives the photon 200 of the incident wavelength for photoelectric quantum conversion, and the photoelectric quantum conversion constants QR, QG, QB, and QIR of the RGB-IR incident wavelength are defined as follows:

(EQ1)

λ is the imaging wavelength, and the preferred RGB imaging wavelength in the embodiment 1 of the present invention is 400-700 nm, and the IR imaging wavelength is 800-900 nm. As an equivalent understanding, the RGB imaging wavelength may be further selected to be 400-650 nm, and the IR imaging wavelength may be selected. It is 750-850nm.

g(λ), r(λ), b(λ), ir(λ) are the photoelectric quantum conversion efficiency sensitivity functions of the photodiode 203RGB-IR wavelength channel of the image sensor 105, respectively, FR(λ), FG(λ) , FB(λ), FIR(λ) are the RGB-IR channel wavelength distribution function of the filter layer 202 of the image sensor 105, and f(λ) is the filter wavelength distribution function of the optical filter (101 or 104), S( λ) is the radiance wavelength distribution function of the LED illumination source (106 RGB and 106 IR-LED); L (λ) is the transmittance wavelength distribution function of the optical imaging lens 102.

According to the definition of ISO unit of measure, the photoelectric quantum conversion constant of QR, QG, and QB is in units of V/lux-sec (volts per lux per second) or ke ^- /lux-sec at 400-700 nm imaging wavelength. In the specific embodiment 1 of the present invention, for example, 2.0 V/lux-sec; at an imaging wavelength of 800-900 nm, the unit of photoelectric quantum conversion constant of QIR is V/(mw/cm ² -sec) (volts per milliwatt per square centimeter) Per second) or ke ^- / (mw / cm ^{2 -} sec); in the embodiment 1 of the invention, for example, 8000 V / (mw / cm ^{2 -} sec).

A reset integration and readout circuit 204 for resetting the integrated and read charge (electron) voltages for resetting the charge (electron) voltage V of the integrating photodiode 203, and reading the charge (electron) voltage V of the photodiode 203, respectively (The equation for resetting the charge (electron) voltage V of the integrating photodiode 203 and reading the charge (electron) voltage V of the photodiode 203, respectively);

Charge (electron) voltage V=Q/C (EQ2)

Where: Q is the charge (electron) of the reset integral of the photodiode 203, C is the equivalent capacitance of the photodiode 203, and further, the photodiode 203 has a full charge (FC) capacity FCC (FCC ≥ 10 ke ^- (K electrons); voltage reset integration and readout circuit 204 has a charge (electron)-voltage conversion gain CG (Conversion gain): CG = 1 / C = V / Q units: μV / e ^- microvolts per charge (Electronic); The voltage reset integration and readout circuit 204 has a global frame mode reset integration and readout (Global Shutter) or a rolling line mode reset integration and readout (Rolling Shutter).

3 is a schematic diagram of a reset integration and readout circuit for resetting an integral and reading a charge (electron) voltage of an imaging pixel unit of an image sensor 105 according to Embodiment 1 of the present invention (203 is light) Electrical diode, 205 is analog-to-digital converter ADC, M1, M2, M3 are transistors, Vdd is power supply, GND is ground, reset is reset integrated control signal for reset integral charge (electron) voltage, read is read charge (electron) The voltage readout control signal, output is the analog-to-digital conversion quantized data output of the analog-to-digital converter ADC205.

The specific principle process of resetting the integral and readout circuits is as follows:

When used to reset the integrated charge (electron) voltage, the reset integral control signal reset effectively turns on the transistor M1, and the incident photon 200 undergoes photoelectric quantum conversion into a cumulative charge (electron) through the photodiode 203, at which time the readout control signal read is invalid. And turning off the transistor M3 without generating readout;

When used to read the charge (electron) voltage, the readout control signal read turns on the transistor M3, and the photodiode 203 accumulates the charge (electron) through the transistor M2, M3 outputs to the analog-to-digital converter ADC 205 to convert the quantized data output, At this time, the reset integral control signal reset is disabled to turn off the transistor M1, and no charge (electron) is accumulated.

The above-mentioned analog-to-digital converter ADC 205 has an effective number of bits for analog-to-digital conversion quantization resolution of ≥8 bits; for example, 8 bits, 10 bits, 12 bits, etc., forming at least 2 ⁸ = 256 LSB, 2 ¹⁰ = 1024 LSB, 2 ¹² = 4096 LSB quantization resolution.

The physical scale (PS) of the imaging pixel unit of each photodiode 203 independently receiving the RGB-IR wavelength channel in the imaging array of the image sensor 105 satisfies the following condition: 1 um / pixel ≤ PS ≤ 3 um / pixel (micron per pixel);

The value YR of the photoelectric conversion of the pixel unit of the independently received R wavelength channel in the image sensor 105 imaging array is:

YR=FF*QR*GAIN*EXP*ADCG*E*PSU (EQ3)

The value YG of the photoelectric conversion of the pixel unit of the independently received G wavelength channel in the image sensor 105 imaging array is:

YG=FF*QG*GAIN*EXP*ADCG*E*PSU (EQ4)

The value YB of the photoelectric conversion of the pixel unit of the independently received B wavelength channel in the imaging array of the image sensor 105 is:

YB=FF*QB*GAIN*EXP*ADCG*E*PSU (EQ5)

The value YIR of the photoelectric conversion of the pixel unit of the independently received IR wavelength channel in the image sensor 105 imaging array is:

YIR=FF*QIR*GAIN*EXP*ADCG*E*PSU (EQ6)

Wherein: the FF (fill factor) described above is a filling factor of the micro lens 201;

EXP is the reset integration time integration time or exposure time of the imaging array of the image sensor 105, unit: S seconds; EXP synchronization is equal to the radiation time of the LED illumination source 106;

GAIN is the digital and analog gain of the image sensor 105 imaging array, no unit;

ADCG is the ADC voltage analog-to-digital conversion quantization resolution of the image sensor 105 imaging array, unit: LSB/V, numerical position per volt;

E is the radiance or irradiance received by the image sensor 105 imaging array, in units of lux (lux) or mw/cm ² (per milliwatt per square centimeter);

E=C*β*I/WD ² *cos ² ψ*(1/FNO) ² (EQ7)

Wherein: I is the radiation intensity of the LED illumination source 106, unit milliwatts per sphericity (mw/sr); ψ is the angle between the radiation position of the LED illumination source 106 and the optical axis 100 of the imaging system; WD is the focus of the optical imaging system FNO is the numerical aperture of the optical imaging lens 102, that is, the inverse of the relative aperture distance; β is the biological tissue optical effect reflectivity of the imaging object (iris or human face) (the wavelength of the LED illumination source radiates through the iris or face biological tissue) Absorption, reflection and scattering produce biological tissue optical effect reflectivity); C is the optical coefficient of the optical imaging system;

C=1/16*cos ⁴ ω/(1+OM) ² (EQ8) where: ω is the object angle of view of the incident light; OM is the optical magnification of the photoelectric imaging system;

The PSU is a physical scale area ratio of each photodiode imaging pixel unit of the imaging array of the image sensor 105; PSU = (PS * PS) / cm ² ;

QR, QG, QB, QIR are the photoelectric quantum conversion constants of each imaging pixel unit of the independent receiving wavelength channel in the imaging array of the image sensor 105; the digital values YR, YG of the photoelectric conversion of the pixel unit of the independent receiving wavelength channel in the image sensor 105 imaging array YB, YIR are further output as imaged image raw RAW pixel data I{YR, YG, YB, YIR}.

The image sensor 105 imaging array has at least 1920*1080 number of RGB-IR imaging pixel units.

The RGB-IR imaging pixel unit of the imaging array of image sensor 105 has a 4-direction 2*2 cross-spaced arrangement format.

4 is a schematic diagram of a pixel unit 4 direction 2*2 cross spacing arrangement pattern of an imaging array of an image sensor 105 RGB-IR wavelength channel according to Embodiment 1 of the present invention;

Fig. 4 is a diagram showing that the RGB-IR wavelength channel is repeatedly composed of 2*2 cross-spaced arrangement patterns in every four directions. The RGB-IR same wavelength channel pixel of the imaging array of the image sensor 15 adopts a 4-way cross-interval sampling mode, wherein the current direction is the same wavelength channel pixel Pixel_SC, the horizontal direction is the pixel Pixel_SH of the same wavelength channel, and the vertical direction is the same wavelength channel. The pixel Pixel_SV is diagonal to the pixel Pixel_SD of the same wavelength channel. For details, refer to the four identical wavelength channel pixels indicated in Figure 5.

The image sensor 105 according to the first embodiment of the present invention can further reduce the volume by using a package such as Bare Die (COB), ShellUT CSP, NeoPAC CSP, TSV CSP or the like.

The LED illumination sources (106 RGB and 106 IR-LEDs) of Embodiment 1 of the present invention have: RGB and IR imaging wavelengths for independent radiation. Still further, the RGB-LED illumination source (106 RGB) has a combination of radiated RGB imaging wavelengths to form white visible light.

The LED illumination source 106 is composed of a semiconductor light emitting diode whose physical configuration is the same as that of the semiconductor photodiode. In contrast, the semiconductor light emitting diode radiates the photons 200 by photoelectrically converting the electron-hole pairs of the semiconductor PN junction by applying a current.

Further, the LED illumination source (106 RGB and 106 IR-LED) according to the embodiment 1 of the present invention has a convex lens or a concave mirror that controls a half-peak radiation angle. The half-peak radiation angle Ω satisfies:

Ω ≥ FOV;

The FOV is a full field of view of the imaging system;

FOV ≥ 2 * arctan ((DI * PS) / (2 * EFL));

Wherein: EFL is the equivalent focal length of the optical imaging lens 102; DI is the number of image-facing angular pixel units of the imaging array of the image sensor 105; and PS is the physical dimension of the pixel unit of the imaging array of the image sensor 105;

LED is theoretically a Lambertian point source with 360-degree angle radiation. The use of a convex lens or a concave mirror can converge the light radiated by the LED point source to control the half-peak radiation angle of the LED illumination source. The convex lens can be made of an optical plastic material such as optical grade PMMA, optical grade PC, etc., and the concave mirror can be made of a high reflectivity metal matrix material.

The LED illumination source (106 RGB and 106 IR-LED) according to the embodiment 1 of the present invention has: one or more different radiation angle positions for optimizing the imaging field of view and imaging quality effects of the photoelectric imaging system, and providing different positions of the cornea In vivo detection of optical reflections. For example, different radiation angle positions (left side Psrl, right side Psrr, left and right sides Psrl & Psrr) located on the left and/or right side of the optical axis 100 of the imaging system are used.

The LED illumination sources (106 RGB and 106 IR-LEDs) of Embodiment 1 of the present invention have continuous or pulsed radiation times and radiation intensities synchronized with image sensor 105 for jointly optimizing the imaging quality effects of the optoelectronic imaging system. LED illumination sources (106RGB and 106IR-LED) can be further reduced in size using packages such as SMD surface mounts.

The optical filter (101 or 104) of the embodiment 1 of the present invention has: filtering RGB and IR imaging wavelengths, transmitting light in the RGB and IR imaging wavelength ranges, and reflecting and/or absorbing RGB and IR imaging wavelength ranges. Light.

Further, the optical filter (101 or 104) described in Embodiment 1 of the present invention has:

Optical filter rate in the RGB and IR imaging wavelength range Fi≤10.0%,

Optical filtering rate outside the RGB and IR imaging wavelength range is Fo ≥ 99.9%;

Equivalent

Light transmittance in the RGB and IR imaging wavelength ranges Ti ≥ 90.0%,

The light transmittance outside the RGB and IR imaging wavelength ranges is To ≤ 0.1%.

The optical filter (101 or 104) can be realized by surface multi-layer coating on optical transparent materials such as optical transparent glass, colored glass, optical plastic, and optical filter (101 or 104). The thickness is ≤ 0.3 mm, and it is further understood as an equivalent of the present invention that the optical filter (101 or 104) can be used as an optical substrate on the surface of the optical imaging lens 102 as an optical substrate for an equivalent replacement.

The optical imaging lens 102 of the embodiment 1 of the present invention has physical refracting focusing RGB and IR imaging wavelengths. Furthermore, the optical imaging lens 102 of the embodiment 1 of the present invention has imaging wavelengths for RGB and IR:

The surface maximum reflectance Rmax ≤ 1.0%, the surface average reflectance Ravg ≤ 0.35%;

Equivalent

The surface minimum transmittance Tmin ≥ 99.0%, and the surface average transmittance Tavg ≥ 99.65%.

The optical imaging lens 102 described above can be implemented by surface multi-layer anti-reflection or anti-reflection coating on an aspheric optical plastic such as optical grade PMMA, optical grade PC and other optical matrix materials; and can be injection molded by 3-5P aspherical optical plastic. Process realization, TTL optical total length ≤ 6mm.

The optical imaging lens has a focal length EFL, and the numerical aperture FNO satisfies:

3mm ≤ EFL ≤ 6mm, 2.0 ≤ FNO ≤ 4.0.

The optical imaging lens 102 is configured as a fixed focus lens including any one of a liquid drive lens, a liquid crystal drive lens, a VCM voice coil drive lens, a MEMS drive lens, an EDOF wavefront phase modulation lens, or a wafer level microarray lens.

The liquid drive lens includes a fixed focus lens, a liquid lens, and a voltage driver for controlling the liquid lens;

The liquid crystal driving lens comprises a fixed focus lens, a liquid crystal lens, and a voltage driver for controlling the liquid crystal lens;

The liquid-driven lens and the liquid crystal-driven lens are both optically power-adjusted by changing the dioptric power of the incident light to achieve an auto-focus function.

The VCM voice coil drive lens comprises a fixed focus lens, a VCM voice coil, and a current driver for controlling the VCM voice coil;

The VCM voice coil drive lens achieves an auto focus function by changing the optical back focus both optical image distance adjustment.

The MEMS (Micro Electro Mechanical System) driving lens includes a fixed focus lens, a MEMS lens, and an electrostatic actuator for controlling the MEMS lens.

The MEMS driven lens achieves an autofocus function by changing the optical position of the MEMS lens.

The wafer level array microlens realizes 3D panoramic deep reconstruction through Computational Imaging.

The EDOF wavefront phase modulation lens comprises a lens, a wavefront phase modulation optical element;

The EDOF wavefront phase modulation is modulated by the wavefront phase modulation optical element, and the inverse filter demodulation reconstruction realizes the extended depth of field function.

The EDOF wavefront phase modulation lens described above has the advantages of low cost, small volume, simple structure, and no complicated driving. Therefore, the specific embodiment 1 of the present invention is preferably described in detail by taking an EDOF wavefront phase modulation lens as an example, and the EDOF wavefront phase modulation lens is imaged, which ensures that the depth of the field is more than 10 times that of the conventional optical imaging system under the condition of maximizing the luminous flux. Field), while simplifying the design of the optical system view of field and aberration correction.

The wavefront phase modulation optical element acts as a phase stop between the lenses.

The wavefront phase modulation optical element is defined to have an oddly symmetric pupil phase modulation function Φ(x, y):

Φ(-x,-y)=-Φ(x,y)

Where: M, N is the order and αmn is the numerical coefficient.

The specific embodiment 1 of the present invention takes into account the requirements of numerical calculation and actual manufacturing complexity in practical applications, and generally adopts a low order with an order less than 9, such as using 7, 5, 3 as an order.

The wavefront phase modulation optical element of the specific embodiment 1 of the present invention can be designed and manufactured by a micro-scale aspherical injection molding method, can reduce cost, has a simple structure, and is easy to mass-produce.

The wavefront phase modulation optical system has an optical point spread function PSF(u, v; θ)

PSF(u,v;θ)=|h(u,v;θ)| ²

Where: P(x, y) is the pupil function of the optical system,

P(x, y)=1, when the integral parameter (x, y) is included in the pupil range;

P(x, y) = 0, when the integral parameter (x, y) is not included in the pupil range;

The pupil function can also be expressed equivalently as the domain area range of the two-dimensional fixed integral, that is, the domain area integral range defining the two-dimensional fixed integral is the pupil range. (x, y) is the point of the pupil plane, and (u, v) is the point of the image plane.

θ is the diffraction wave aberration or defocus parameter; λ is the imaging wavelength, f is the equivalent focal length of the optical system, d _o is the distance from the entrance pupil plane to the object plane, d _i is the distance from the pupil plane to the image plane, and A is light瞳 area, Zernike (x, y) is the Zernike aberration function of the optical system;

In fact, considering that the optical system has spherical characteristics, the above two-dimensional integral can also be equivalently represented by polar coordinate integration. According to the definition of the pupil phase modulation function Φ(x, y), the point spread function PSF(u, v; θ) is symmetrical.

The pupil phase modulation function Φ(x, y) of the wavefront phase modulation optical system with modulation transfer function (MTF) and diffraction-aberration spatial/frequency domain combination optimization satisfies the condition: diffraction wave aberration The optimization degree J is globally minimized, theoretically J=0.

Among them: the diffraction wave aberration optimization degree J is determined by the following definition:

Where: [-θ0, θ0] is the symmetrical range of the diffracted wave aberration or defocus parameter specified in the actual application;

At the same time, according to the optical theory, the wavefront phase modulation optical system has a Fourier transform pair with an optical transfer function OTF(s, t; θ) of PSF(u, v; θ), and has the following inference:

The modulation transfer function optimization degree M is determined by the following definition:

According to the above definition and inference, it can be proved that the pupil phase modulation function Φ(x, y) has a modulation transfer function and a diffraction wave aberration space under the condition that the diffraction wave aberration optimization degree J is globally minimized. Frequency domain combination optimization. And theoretically, under the condition of J=0, the wavefront phase is fixed constant with respect to the diffraction wave aberration, and the original image can be restored by a simple digital demodulation process.

The image plane image O(u, v) imaged by the image sensor 105 is recovered by digital signal processing image demodulation, and as a result, the original digital image I(x, y) is reconstructed. Digital signal processing image demodulation recovery is specifically:

I(x,y)=H(u,v)*g(u,v)=∫∫H(x-u,y-v)g(u,v)du dv

Where H(u,v)=O(u,v)-N(u,v);

O(u,v) is the image plane image imaged by the image sensor 105, N(u,v) is the equivalent noise function of the photoelectric imaging system, g(u,v)=F ^-1 (1/MTF(s,t )), that is, the inverse Fourier transform of the reciprocal of MTF(s,t), which is a predetermined modulation transfer function (MTF) function of the wavefront phase modulation optical system, and * represents a two-dimensional function convolution integral.

Since MTF(s,t) is determined for the above predetermined optical system, g(u,v) is also determined, and the convolutional scale of g(u,v) is also tightly supported, more recently equivalent The noise function N(u,v) is also determined for the predetermined optoelectronic imaging system described above. Therefore, the digital signal processing image demodulation recovery can be expressed in a mathematically discrete form, and the specific embodiment 1 of the present invention can be optimized. The integer code is implemented in real time by a digital signal processing device such as an FPGA or a DSP, or in real time by a software algorithm of the processor chip 109.

Embodiment 1 of the present invention is due to different optical imaging requirements, imaging wavelength, pixel spatial resolution, optical magnification, optical spatial resolution, and focusing work distance range of the iris recognition photoelectric imaging system and the front photoelectric imaging system.

The iris recognition optoelectronic imaging system described above has the following optical imaging requirements:

The imaging wavelength WI of the iris recognition optoelectronic imaging system satisfies:

800nm ≤ WI ≤ 900nm or 750nm ≤ WI ≤ 850nm;

The focused work distance WD of the iris recognition photoelectric imaging system satisfies:

10cm ≤ WD ≤ 30cm.

The pixel spatial resolution PSR (pixel spatial resolution) of the iris recognition photoelectric imaging system should satisfy: PSR ≥ 13 pixel/mm;

The optical magnification OM (optical magnification) of the iris recognition photoelectric imaging system should satisfy:

OM=PS*PSR

Among the mentioned:

PS is the physical scale of each imaging pixel unit of the image sensor;

PSR is the pixel spatial resolution of the iris recognition photoelectric imaging system;

The optical spatial resolution of image of plane (ISRI) should be satisfied in the image plane: when the modulation transfer function is 60% (MTF=0.6), 1/(4*PS)≤OSRI≤ 1/(2*PS) lp/mm (line pair per mm).

The front optoelectronic imaging system has the following optical imaging requirements:

The imaging wavelength WI of the front optoelectronic imaging system satisfies:

400nm ≤ WI ≤ 700nm or 400nm ≤ WI ≤ 650nm

The focused work distance WD of the front optoelectronic imaging system meets:

30cm ≤ WD ≤ 100cm.

The pixel spatial resolution PSR (pixel spatial resolution) of the front photoelectric imaging system should satisfy: PSR≤4pixel/mm;

The optical magnification of OM (optical magnification) of the front optoelectronic imaging system should satisfy:

OM=PS*PSR

Among the mentioned:

PS is the physical scale of each imaging pixel unit of the image sensor;

PSR is the pixel spatial resolution of the front optoelectronic imaging system;

The optical spatial resolution of image of plane (OSRI) is in the image plane It should be satisfied that 1/(4*PS) ≤ OSRI ≤ 1/(2*PS) lp/mm (line pair per mm) when the modulation transfer function is 60% (MTF = 0.6).

The pre-photoelectric imaging method of the present invention comprises the following steps:

1. The processor chip 109 controls the LED current driver 108 to drive the LED illumination source 106 (106 RGB) to produce radiation in RGB imaging wavelength continuous or sync pulse mode;

2. After RGB imaging wavelength filtering and physical refraction focusing, the imaging array of the image sensor 105 independently receives 3 RGB wavelength channels for global frame mode or rolling line mode reset integration (exposure) and readout;

3. The processor chip 109 respectively acquires the imaged raw RAW pixel data I{YR, YG, YB} output by three identical RGB wavelength channels in the imaging array;

4. The processor chip 109 drives the image sensor 105 and the LED illumination source 106 and the optical imaging lens 102 to focus according to the imaged image raw RAW pixel data I{YR, YG, YB} and the pixel unit photoelectric conversion relationship to implement feedback control;

5. The processor chip 109 respectively performs interpolation reconstruction between the original RAW data I{YR, YG, YB} pixels of three identical RGB wavelength channels in the imaging array;

6. The processor chip 109 outputs the interpolated reconstructed image I{r, g, b}, each pixel containing an RGB pixel value.

Further explained, in the above steps, the imaging array of the image sensor 105 is N*M RGB-IR imaging units, and the original RAW data I{YR, YG, YB} of the three identical RGB wavelength channels are respectively (N/2)*(M/2) number of imaging units, (N/2)*(M/2) number of imaging unit pixels of each same wavelength channel are interpolated and reconstructed into N*M number of pixels. The (N/2)*(M/2) pixels passing through the same wavelength channel are respectively interpolated and reconstructed into N*M number of pixels, and each pixel respectively includes RGB pixel values.

To further explain, the photoelectric conversion relationship of the pixel unit in the above step 4 includes the formulas EQ3, EQ4, EQ5. The processor chip 109 can control the reset integration time, digital and analog gain settings of the image sensor 105 according to the imaged image raw RAW pixel data I{YR, YG, YB} output by the image sensor 105 and the corresponding formulas EQ3, EQ4, EQ5. The feedback control LED current driver 108 drives the radiation intensity of the LED illumination source 106, the angular position of the radiation, and the radiation time to improve imaging quality.

The optical imaging lens 102 focuses on the focal mass value feedback control of the imaged image raw RAW pixel data I{YR, YG, YB} by at least 30 cm-100 cm. Conventional autofocus methods such as focus quality maximum peak iterative search can be employed.

The processor chip 109 can pass the light sensor (depending on the use, a separate device can be provided on the processor chip 109, the method of which is set as the prior art, or the corresponding processing can be purchased in the market. The chip implements such a light sensor function) controlling the LED current driver 108 to drive the LED according to the current ambient light brightness The radiant intensity of the illumination source 106 RGB. Furthermore, in the specific embodiment 1 of the present invention, if the light sensor is judged to be greater than 500-1000 lux or more according to the current ambient light brightness, the LED current driver is turned off to drive the LED illumination source 106 RGB.

Further, the processor chip 109 can perform optical black level correction BLC of the image sensor, RGB channel automatic white balance AWB, RGB channel color matrix correction CCM, lens edge shading correction by the imaged raw RAW pixel data output by the image sensor 105. Lens shading correction, automatic exposure feedback control AEC, automatic gain feedback control AGC, etc.

The iris recognition photoelectric imaging method comprises the following steps:

1. The processor chip 109 controls the LED current driver 108 to drive the LED illumination source 106 (106IR) to generate radiation in an IR imaging wavelength continuous or sync pulse mode;

2. After IR imaging wavelength filtering and physical refraction focusing, the image sensor 105 imaging array independently receives the IR wavelength channel for global frame mode or rolling line mode reset integration (exposure) and readout;

3. The processor chip 109 acquires the imaged image raw RAW pixel data I{YIR} output by the same IR wavelength channel in the imaging array;

4. The processor chip 109 drives the image sensor 105 and the LED illumination source 106 and the optical imaging lens 102 to focus according to the imaged image raw RAW pixel data I{YIR} and the pixel unit photoelectric conversion relationship to implement feedback control;

5. The processor chip 109 performs interpolation reconstruction between the original RAW data I{YIR} pixels of the same IR wavelength channel in the imaging array;

6. The processor chip 109 outputs the interpolated reconstructed image I{ir}.

Further explained, in the above step, the imaging array of the image sensor 105 is N*M RGB-IR imaging units, and the original RAW data I{YIR} of the same IR wavelength channel is (N/2)*(M/2) number. The imaging unit, the (N/2)*(M/2) number of imaging unit pixels of the same IR wavelength channel are interpolated and reconstructed into N*M number of pixels. Interpolation between (N/2)*(M/2) pixels passing through the same IR wavelength channel is performed as N*M number of pixels.

To further explain, the pixel unit photoelectric conversion relationship of step 4 described above includes the formula EQ6. The processor chip 109 can feedback control the reset integration time of the image sensor 105, the digital and analog gain settings according to the imaged raw RAW pixel data and the formula EQ6 output by the image sensor 105, and feedback control the LED current driver 108 to drive the radiation of the LED illumination source 106. Intensity, angular position of the radiation, and radiation time are used to improve imaging quality. The optical imaging lens 102 focuses the focus mass value feedback control by calculating the imaged image raw RAW pixel data I{YIR} to achieve an iris recognition photo imaging system focusing the object distance WD by at least 10 cm-30 cm. Conventional autofocus methods such as focus quality maximum peak iterative search can be employed.

Further, the processor chip 109 can perform optical black level correction BLC of the image sensor, automatic exposure feedback control AEC, and automatic gain feedback control AGC through the imaged raw RAW pixel data output by the image sensor 105.

As a simplified example of the equivalent understanding of the specific embodiment 1 of the present invention, the iris recognition photoelectric imaging method comprises the following steps:

1. The processor chip 109 controls the LED current driver 108 to drive the LED illumination source (106IR) to generate radiation in the IR imaging wavelength continuous or sync pulse mode;

2. After IR imaging wavelength filtering and physical refraction focusing, the image sensor 105 imaging array independently receives the IR wavelength channel for global frame mode or rolling line mode reset integration (exposure) and readout;

3. The processor chip 109 acquires the imaged image raw RAW pixel data I{YIR} output by the same IR wavelength channel in the imaging array;

4. The processor chip 109 drives the image sensor 105 and the LED illumination source (106IR) and the optical imaging lens 102 to focus according to the imaged image raw RAW pixel data I{YIR} and the pixel unit photoelectric conversion relationship, to implement feedback control;

5. The processor chip 109 outputs raw RAW data I{YIR} pixels of the same IR wavelength channel in the imaging array.

The above simplified example is equivalently understood as the specific embodiment 1 of the present invention, and the iris recognition photoelectric imaging method removes the original RAW data between the I{YIR} pixels for the interpolation reconstruction step.

The interpolation reconstruction described in Embodiment 1 of the present invention uses an original RAW data interpolation algorithm for 4-direction neighboring pixels between pixels of the same wavelength channel in the imaging array.

The interpolated value algorithm includes tradition:

Nearest interpolation of Nearest-neighbor interpolation, linear interpolation of linear interpolation, bilinear interpolation of bilinear interpolation, bicubic interpolation of bicubic interpolation, spline interpolation, etc.

Considering that the image texture such as iris or face has natural continuity characteristics, based on the correlation between image pixels, the present invention provides a faster and more efficient interpolation algorithm, and referring to the schematic diagram of FIG. 5, the following steps are included:

1. Sampling the image of the same wavelength channel output The pixel values of the original RAW pixel data to be interpolated in the 4 direction are: the same wavelength channel pixel Pixel_SC in the current direction, the pixel Pixel_SH of the same wavelength channel in the horizontal direction, the same in the vertical direction Pixel_SV of the wavelength channel, pixel Pixel_SD of the same wavelength channel in the diagonal direction;

The same wavelength channel pixel 4 direction cross-interval sampling is because the pixel units of the same wavelength channel of the imaging array are arranged in a 4-direction 2*2 cross-interval format.

2. Calculate the adjacent pixel interpolation in the four directions of the pixel data to be interpolated, Pixel_C, Pixel_H, Pixel_V, Pixel_D:

The pixel of the current direction Pixel_C=Pixel_SC;

Adjacent pixel interpolation in the horizontal direction Pixel_H=(Pixel_SH+Pixel_SC)/2;

Pixel_V=(Pixel_SV+Pixel_SC)/2 in the adjacent pixel of the vertical direction;

Pixel_D=(Pixel_SH+Pixel_SV+Pixel_SD+Pixel_SC)/4;

3. Loop Steps 1 - 2, traversing all of the raw RAW to be interpolated pixel data in the imaged image to form the final complete interpolated image data.

As an equivalent understanding, the above-mentioned 4-direction neighboring pixel interpolation algorithm can promote the interpolation algorithm.

The invention provides a high-safety iris anti-counterfeiting living body detecting method, which has real-time detecting capability for iris forgery, and is used for ensuring the safety of biometric identification itself, including:

One or more of the following methods should be used:

1. Real-time detection method for optical activity characteristics of biological tissues generated by RGB-IR imaging wavelength radiation;

2. RGB-IR imaging wavelength radiation produced by the pupil iris diameter change rate biological tissue activity characteristics real-time detection method;

3. Real-time detection method of corneal optical reflection position generated by RGB-IR imaging wavelength radiation;

4. Real-time detection method for the active characteristics of eyeball physiological movement.

The real-time detection described above is that the processing speed of the iris anti-counterfeiting living body detecting method is faster than the image capturing frame rate; the image capturing frame rate is 120 fps, 90 fps, 60 fps, 30 fps, and the image capturing frame rate is higher. The iris anti-counterfeiting living body detecting method The more reliable it is.

The method for real-time detection of biological tissue optical activity characteristics generated by RGB-IR imaging wavelength radiation of the present invention comprises the following steps:

1. The processor chip 109 controls the LED current driver 108 to drive the LED illumination source 106 (106 RGB and 106 IR) to generate RGB imaging wavelength radiation and IR imaging wavelength radiation in real time;

2. The processor chip 109 acquires the real-time imaging images IRGB and IIR output by the RGB wavelength channel and the IR wavelength channel of the imaging array of the image sensor 105 in real time;

3. The processor chip 109 calculates the contrast Csk, Csi, Cip, Csip, Ckip data of the RGB imaging image IRGB and the IR imaging image IIR in step 2, respectively, IRGB_Csk, IRGB_Csi, IRGB_Cip, IRGB_Csip, IRGB_Ckip, IIR_Csk, IIR_Csi, respectively. IIR_ip, IIR_Csip, IIR_Ckip;

among them:

Csk is the contrast between the skin area and the iris area;

Csi is the contrast between the scleral region and the iris region;

Cip is the contrast between the iris area and the pupil area;

Csip is the scleral region, the contrast between the iris region and the pupil region;

Ckip is the contrast between the skin area, the iris area and the pupil area;

Csk=S(Iskin)/S(Iiris);

Csi=S(Isclera)/S(Iiris);

Cip=S(Iiris)/S(Ipupil);

Csip=(S(Isclera)-S(Iiris))/(S(Iiris)-S(Ipupil));

Ckip=(S(Iskin)-S(Iiris))/(S(Iiris)-S(Ipupil));

Ipupil represents the pixel of the pupil area;

Iiris represents the iris area pixel;

Isclera represents the scleral region pixel;

Iskin represents the skin area pixel;

The function S is a corresponding area pixel statistical evaluation function, and the method used by the pixel statistical evaluation function includes: histogram statistics, frequency statistics, average statistics, weighted average statistics, median statistics, energy value statistics, variance statistics The space-frequency domain filter or the like; the corresponding area pixel statistical evaluation function S of the present invention is not limited to the above examples, and other methods should be equivalently understood.

4. The processor chip 109 calculates the image contrast activity change rate Fsk and Fsi, Fip, Fsip, Fkip of the RGB imaging wavelength radiation and the IR imaging wavelength radiation in real time, respectively;

among them:

Fsk=IRGB_Csk/IIR_Csk*100%;

Fsi=IRGB_Csi/IIR_Csi*100%;

Fip=IIR_Cip/IRGB_Cip*100%;

Fsip=IRGB_Csip/IIR_Csip*100%;

Fkip=IRGB_Ckip/IIR_Ckip*100%;

5. According to the RGB-IR imaging wavelength, the preset value of the optical activity characteristic of the biological tissue is irradiated, and the corresponding change rate of the activity contrast of the data values Fsk, Fsi, Fip, Fsip, and Fkip in step 4 is determined, and any one or more conditions are determined. 300%, Fsi>300%, Fip>300%, Fsip>900%, Fkip>900%, real-time detection of iris living state.

FIG. 6 is a schematic diagram showing a contrast region of an iris image according to a specific embodiment 1 of the present invention. As shown in Figure 6, which is defined by Isclera, Iiris, Ipupil, Iskin:

1 is the pupil area Ipupil represents the pixel of the pupil area;

2 is the iris area Iiris represents the iris area pixel;

3 indicates the scleral region pixel for the scleral region Isclera;

4 denotes a skin area pixel for the skin area Iskin;

The method for detecting the biological activity characteristic of the pupil iris diameter change rate generated by the RGB-IR imaging wavelength radiation according to the embodiment 1 of the present invention comprises the following steps:

1. The processor chip 109 controls the LED current driver 108 to drive the LED illumination source 106 (106 RGB and 106 IR) to generate RGB and IR imaging wavelength radiation in different intensities of dil, con and time, respectively, to stimulate the pupil to produce biological tissue activity expansion and contraction. ;

2. The processor chip 109 respectively acquires real-time imaging images Idil and Icon under different radiation time and intensity conditions of the RGB-IR wavelength channel output of the image sensor 105 imaging array in real time;

3. The processor chip 109 respectively calculates the pupil-iris diameter ratio ρ data of the iris images in the imaged images Idil and Icon in step 2, respectively, ρdil and ρcon;

ρ=Dpupil/Diris,

The Dpupil is a pupil diameter pixel length;

The Diris is an iris diameter pixel length;

4. The processor chip 109 calculates the corresponding activity change rate Δρ=(ρdil-ρcon)*100% in real time;

5. According to different intensity and time conditions, the preset value of biological tissue activity expansion and contraction generated by real-time stimulation of pupil, and the corresponding activity change rate of data value Δρ in step 4, judge Δρ>10% condition, real-time detection of iris Living state.

Figure 7 is a schematic illustration of the diameter of the pupil and iris defining the iris image of the present invention. As shown in Figure 7, where Dpupil, Diris defines:

The Dpupil is a pupil diameter pixel length;

The Diris is an iris diameter pixel length;

The method for detecting corneal optical reflection position generated by RGB-IR imaging wavelength radiation according to the present invention comprises the following steps:

1. The processor chip 109 controls the LED current driver 108 to drive the LED illumination source 106 (106 RGB or 106 IR) to generate the RGB and IR imaging wavelength radiation in the left-hand Psrl, the right Psrr and the left and right Psrl & Psrr respectively. Corneal optical reflection points at different locations;

2. The processor chip 109 respectively acquires the real-time imaging image Isr of the RGB-IR wavelength channel output of the imaging array of the image sensor 105 in real time;

3. The processor chip 109 calculates the corneal optical reflection point position data Psr of the imaged image Isr in step 2 in real time;

4. According to the LED illumination source 106, the preset values under different position conditions are generated in real time, and the corneal optical reflection point position Psr calculated in the step 3 is used to determine whether the corneal optical reflection point position Psr meets the corresponding LED illumination source position condition:

If the position of the LED illumination source is Psrl, it should be consistent with Psr=Psrl;

If the position of the LED illumination source is Psrr, it should be consistent with Psr=Psrr;

If the position of the LED illumination source is Psrl & Psrr, it should be consistent with Psr=Psrl&Psrr;

Real-time detection of iris living conditions.

Figure 8 is a schematic illustration of optical reflection points at different locations of the cornea defining an iris image of the present invention. As shown in Figure 8, where Psrl, Psrr, Psrl & Psrr are defined:

The Psrl is a corneal optical reflection point generated by the LED illumination source at a left position;

The Dsrr generates a corneal optical reflection point at a right position for the LED illumination source;

The Psrl & Psrr generates a corneal optical reflection point for the left and right side positions of the LED illumination source.

The method for real-time detection of the active characteristics of the physiological movement of the eyeball of the present invention comprises real-time detection of the activity characteristics of the eyelid movement produced by the physiological movement of the eyeball, comprising the following steps:

1. The processor chip 109 controls the LED current driver 108 to drive the LED illumination source 106 (106 RGB or 106 IR) to generate RGB-IR imaging wavelength radiation in real time;

2. The processor chip 109 acquires the real-time imaging image Iem of the RGB-IR wavelength channel output of the imaging array of the image sensor 105 in real time;

3. The processor chip 109 calculates the eyelid motion characteristic degree data EM generated by the eyeball physiological motion of the imaged image Iem in step 2 in real time;

among them:

The degree of eye movement characteristics EM produced by the physiological movement of the eye is defined as:

EM=Visual_Iris/All_Iris*100%;

All_Iris is the number of pixels in the entire area of the iris in the image Iem;

Visual_Iris is the number of pixels of the effective area area of the iris formed by the eyelid movement in the image Iem;

4. Real-time calculation of the degree of eye movement characteristics of the eye movement physiological movement EM activity change rate value ⊿ EM;

5. The preset value of the activity change rate according to the degree of eye movement characteristics produced by the physiological movement of the eyeball, and the activity change rate value ⊿EM of the degree of eye movement characteristic data EM generated by the physiological movement of the eyeball calculated in step 4, judging ⊿EM >10% condition, real-time detection of iris living state.

Figure 9 is a schematic illustration of the extent of eyelid motion characteristics that define the physiological movement of the eyeball in accordance with the present invention. As indicated by the schematic diagram 9, the dotted line All_Iris in the imaged image indicates the number of pixels in the entire area of the iris, and the solid line Visual_Iris indicates the number of pixels in the area of the effective area of the iris.

The method for real-time detection of the active characteristics of the physiological movement of the eyeball according to the present invention comprises real-time detection of the activity characteristics of the off-axis strabismus produced by the physiological movement of the eyeball, comprising the following steps:

1. The processor chip 109 controls the LED current driver 108 to drive the LED illumination source 106 (106 RGB or 106 IR) to generate RGB-IR imaging wavelength radiation in real time;

2. The processor chip 109 acquires the real-time imaging image Ieg of the RGB-IR wavelength channel output of the imaging array of the image sensor 105 in real time;

3. The processor chip calculates the off-axis squint characteristic degree data EG of the eyeball physiological motion of the imaged image Ieg in step 2 in real time;

among them:

The degree of off-axis strabismus characteristic produced by the physiological movement of the eye is defined as:

EG=S_Iris/L_Iris*100%;

S_Iris is the short axis length of the iris formed by the off-axis squint in the image Ieg;

L_Iris is the length of the long axis of the iris formed by the off-axis squint in the image Ieg;

4. Real-time calculation of the degree of activity of the eccentricity of the eccentricity of the eyeball physiological movement EG activity change rate value ⊿ EG;

5. The preset value of the activity change rate according to the degree of off-axis strabismus produced by the physiological movement of the eyeball, and the activity change rate value EG of the off-axis squint characteristic degree data EG generated by the physiological movement of the eyeball calculated in step 4, The condition of ⊿ EG>10% is judged to realize the detection of the living state of the iris.

Fig. 10 is a schematic view showing the degree of physiological activity characteristics of off-axis strabismus produced by the physiological movement of the eyeball according to the present invention. As indicated by the schematic diagram 10, S_Iris in the imaged image represents the short-axis pixel length of the iris, and L_Iris represents the long-axis pixel length of the iris.

The specific embodiments and features of the present invention can be implemented within the scope of the same or equivalent understanding, such as variations in imaging wavelength range, image sensor variations, LED illumination source variations, optical filter variations, optical imaging lens variations, Optical path transformation, device replacement should also be equivalent.

Finally, it should also be noted that the above list is only a few specific embodiments of the invention. It is apparent that the present invention is not limited to the above embodiment, and many variations are possible. All modifications that can be directly derived or conceived by those of ordinary skill in the art from the disclosure of the present invention are considered to be the scope of the present invention.

Claims (27)

1. A mobile terminal front-end and face/iris recognition integrated photoelectric imaging system, the system comprising a processor chip, an LED current driver, an LED illumination source, an optical filter, an optical imaging lens, and an image sensor;

   The imaging array of the image sensor is configured to have a received RGB-IR wavelength channel;

   The LED illumination source is configured to have a range of radiation wavelengths that match the image sensor RGB-IR imaging wavelength channel;

   The optical filter is configured to have a filtered wavelength range that matches an image sensor RGB-IR imaging wavelength channel;

   The optical imaging lens is configured to have a range of focus wavelengths that match the image sensor RGB-IR imaging wavelength channel;

   The processor chip is configured to drive image sensor settings, control image pixel value data output by the image sensor RGB-IR wavelength channel imaging array, and drive control LED current driver;

   The LED current driver is configured to drive control of an LED illumination source radiation intensity, a radiation angular position, and a radiation time.
2. The mobile terminal front and face/iris recognition integrated photoelectric imaging system according to claim 1, wherein the optical imaging lens is configured as a fixed focal length lens, including a liquid driving lens, a liquid crystal driving lens, and a VCM sound. Any of a circle-driven lens, a MEMS-driven lens, an EDOF wavefront phase modulation lens, or a wafer-level array microlens.
3. The integrated front view and face/iris recognition integrated photoelectric imaging system according to claim 1, wherein said LED illumination source has: a convex lens or a concave mirror for controlling a half-peak radiation angle, said The half-peak radiation angle Ω satisfies:

   Ω ≥ FOV;

   The FOV is a full field of view of the imaging system;

   FOV ≥ 2 * arctan ((DI * PS) / (2 * EFL));

   Wherein: EFL is the equivalent focal length of the optical imaging lens; DI is the number of image-facing pixel units of the image sensor imaging array; PS is the physical dimension of the pixel unit of the image sensor imaging array;

   The LED illumination source has: RGB and IR imaging wavelengths for independent radiation, one or more different radiation angular positions, continuous or pulsed radiation time and radiation intensity synchronized with the image sensor.
4. The mobile terminal pre- and iris recognition integrated optoelectronic imaging system of claim 1 , the system implementing an optical pathway for a front optoelectronic imaging system and an optical pathway for an iris recognition optoelectronic imaging system, wherein the front optoelectronics The optical pathways of the imaging system include:

   The LED illumination source radiates the RGB imaging wavelength, the optical filter filters the RGB imaging wavelength, the optical imaging lens physically refracts the focused RGB imaging wavelength, and the image sensor imaging array independently receives the RGB wavelength channel;

   The optical pathway of the iris recognition optoelectronic imaging system includes:

   The LED illumination source radiates the IR imaging wavelength, the optical filter filters the IR imaging wavelength, the optical imaging lens physically refracts the focused IR imaging wavelength, and the image sensor imaging array independently receives the IR wavelength channel.
5. The integrated front view and face/iris recognition integrated photoelectric imaging system according to claim 1, wherein the imaging wavelength comprises an RGB imaging wavelength of 400-700 nm and an IR imaging wavelength of 800-900 nm;

   or

   RGB imaging wavelength is 400-650nm, IR imaging wavelength is 750-850nm;

   The front photoelectric imaging system adopts RGB imaging wavelength, and the focusing work distance WD is at least 30-100 cm;

   The iris recognition photoelectric imaging system adopts an IR imaging wavelength, and the focusing work distance WD is at least 10-30 cm.
6. The mobile terminal front and face/iris recognition integrated photoelectric imaging system according to claim 1, wherein the optical filter has: filtering RGB and IR imaging wavelengths, and transmitting RGB and IR imaging wavelength ranges. Light inside, reflecting and/or absorbing light outside the RGB and IR imaging wavelength ranges;

   And meet the following range of values:

   Optical filter rate in the RGB and IR imaging wavelength range Fi≤10.0%,

   Optical filtering rate outside the RGB and IR imaging wavelength range is Fo ≥ 99.9%;

   Equivalent

   Light transmittance in the RGB and IR imaging wavelength ranges Ti ≥ 90.0%,

   Light transmittance To ≤ 0.1% outside the wavelength range of RGB and IR imaging;

   The optical filter is realized by surface multi-layer coating on optical transparent glass, colored glass, optical plastic and other optical matrix materials, and the optical filter thickness is ≤0.3 mm;

   The optical filter is an equivalent replacement for multilayer coating on the surface of the optical imaging lens as an optical substrate.
7. The mobile terminal front-end and face/iris recognition integrated photoelectric imaging system according to claim 1, wherein the optical imaging lens has: physical refractive focus RGB and IR imaging wavelengths;

   Its imaging wavelength for RGB and IR:

   The surface maximum reflectance Rmax ≤ 1.0%, the surface average reflectance Ravg ≤ 0.35%;

   Equivalent

   The minimum surface transmittance Tmin ≥ 99.0%, the surface average transmittance Tavg ≥ 99.65%;

   And its focal length EFL, the numerical aperture FNO meets:

   3mm≤EFL≤6mm, 2.0≤FNO≤4.0;

   The optical imaging lens is implemented by performing multi-layer anti-reflection or anti-reflection coating on the surface of the aspherical optical plastic matrix material;

   The optical imaging lens is realized by a 3-5P aspherical optical plastic injection molding process, and the total length of the TTL optics is ≤6 mm.
8. The mobile terminal front and face/iris recognition integrated photoelectric imaging system according to claim 4, wherein the iris recognition photoelectric imaging system has the following optical imaging requirements:

   The imaging wavelength WI of the iris recognition optoelectronic imaging system satisfies:

   800nm ≤ WI ≤ 900nm or 750nm ≤ WI ≤ 850nm;

   The pixel spatial resolution PSR (pixel spatial resolution) of the iris recognition photoelectric imaging system should satisfy: PSR ≥ 13 pixel/mm;

   The optical magnification OM (optical magnification) of the iris recognition photoelectric imaging system should satisfy:

   OM=PS*PSR;

   Among the mentioned:

   PS is the physical scale of each imaging pixel unit of the image sensor;

   PSR is the pixel spatial resolution of the iris recognition photoelectric imaging system;

   The optical spatial resolution OSRI of the iris recognition optoelectronic imaging system should be satisfied in the image plane: 1/(4*PS) ≤ OSRI ≤ 1/(2*PS) at 60% of the modulation transfer function.
9. The mobile terminal front and face/iris recognition integrated photoelectric imaging system according to claim 4, wherein said front photoelectric imaging system has the following optical imaging requirements:

   The imaging wavelength WI of the front optoelectronic imaging system satisfies:

   400nm ≤ WI ≤ 700nm or 400nm ≤ WI ≤ 650nm

   The pixel spatial resolution PSR of the front optoelectronic imaging system should satisfy:

   PSR≤4pixel/mm;

   The optical magnification OM of the front optoelectronic imaging system should satisfy:

   OM=PS*PSR;

   Among the mentioned:

   PS is the physical scale of each imaging pixel unit of the image sensor;

   PSR is the pixel spatial resolution of the front optoelectronic imaging system;

   The optical spatial resolution OSRI of the front-optical imaging system should satisfy the image plane: 1/(4*PS) ≤ OSRI ≤ 1/(2*PS) lp/mm at 60% of the modulation transfer function.
10. The mobile terminal front-end and face/iris recognition integrated photoelectric imaging system according to claim 1, wherein the imaging array of the image sensor independently receives each of the imaging pixel units of the RGB-IR wavelength channel, comprising:

    a microlens for converging photons;

    Independent RGB-IR wavelength channel filter layer for filtering photons;

    a semiconductor photodiode for capturing photons of an incident wavelength for photoelectric quantum conversion;

    a reset integration and readout circuit for resetting the integrated and readout charge voltages;

    An analog-to-digital converter ADC for converting a voltage value to a quantized value.
11. The mobile terminal front-end and face/iris recognition integrated photoelectric imaging system according to claim 10, wherein the microlens has a convergent photon efficiency or a fill factor FF ≥ 95%;

    The RGB-IR wavelength channel filter layer is used for filtering to generate independent RGB-IR wavelength channels;

    B wavelength channel: 400nm–500nm;

    G wavelength channel: 500nm–600nm;

    R wavelength channel: 600nm–700nm;

    IR wavelength channel: 800nm–900nm;

    or

    B wavelength channel: 400nm–500nm;

    G wavelength channel: 500nm–590nm;

    R wavelength channel: 590nm–670nm;

    IR wavelength channel: 750nm–850nm;

    The filter layer has RGB-IR channel wavelength distribution functions FR(λ), FG(λ), FB(λ), FIR(λ);

    The semiconductor photodiode has a photoelectric quantum conversion generated by forming photo-hole pairs at a semiconductor PN junction by receiving photons of an incident wavelength;

    The semiconductor photodiode receives photons of incident wavelength for photoelectric quantum conversion, and the photoelectric quantum conversion constants QR, QG, QB, and QIR of the RGB-IR incident wavelength are defined as follows:

    

    

    

    

    The λ is the imaging wavelength, g(λ), r(λ), b(λ), ir(λ) are the photoelectric quantum conversion efficiency sensitivity functions of the photodiode RGB-IR wavelength channel of the image sensor, respectively, FR ( λ), FG(λ), FB(λ), FIR(λ) are the wavelength distribution functions of the filter layer RGB-IR channel of the image sensor, and f(λ) is the filter wavelength distribution function of the optical filter, S (λ) is the radiance wavelength distribution function of the LED illumination source; L(λ) is the transmittance wavelength distribution function of the optical imaging lens;

    At 400-700 nm imaging wavelength, the photoelectric quantum conversion constant unit of QR, QG, QB is V/lux-sec or ke ^- /lux-sec;

    At an imaging wavelength of 800-900 nm, the photoelectric quantum conversion constant unit of QIR is V/(mw/cm ² -sec) or ke ^- /(mw/cm ² -sec);

    The reset integration and readout circuit for resetting the integrated and readout charges are respectively used to reset the charge voltage V of the integrated photodiode, and read out the charge voltage V of the photodiode;

    The charge voltage V=Q/C

    Where: Q is the charge of the reset integral of the photodiode, and C is the equivalent capacitance of the photodiode;

    The photodiode has a full charge capacity FCC, FCC ≥ 10 ke ^- ;

    The voltage reset integration and readout circuit has a charge-voltage conversion gain CG: CG= 1/C=V/Q, and reset integration of the global frame mode and reset integration and readout of the read or scroll line mode;

    The analog-to-digital converter ADC has an effective number of bits for analog-to-digital conversion quantization resolution of ≥8 bits.
12. The mobile terminal front and face/iris recognition integrated photoelectric imaging system according to claim 1, wherein the imaging array of the image sensor receives the physics of each photodiode imaging pixel unit of the RGB-IR wavelength channel The scale meets:

    1um/pixel≤PS≤3um/pixel;

    The value YR of the pixel unit photoelectric conversion of the independently received R wavelength channel in the imaging array of the image sensor is:

    YR=FF*QR*GAIN*EXP*ADCG*E*PSU

    The value YG of the photoelectric conversion of the pixel unit of the independently received G wavelength channel in the imaging array of the image sensor is:

    YG=FF*QG*GAIN*EXP*ADCG*E*PSU

    The value YB of the photoelectric conversion of the pixel unit of the independently received B wavelength channel in the imaging array of the image sensor is:

    YB=FF*QB*GAIN*EXP*ADCG*E*PSU

    The value YIR of the pixel unit photoelectric conversion of the independently received IR wavelength channel in the imaging array of the image sensor is:

    YIR=FF*QIR*GAIN*EXP*ADCG*E*PSU

    among them:

    The EXP is a reset integration time or an exposure time of the image sensor imaging array;

    The EXP synchronization is equal to the LED illumination source radiation time T;

    The GAIN is a digital and analog gain of an image sensor imaging array;

    The ADCG is an ADC voltage analog-to-digital conversion quantization resolution of an image sensor imaging array;

    The E is an radiance or irradiance received by the image sensor imaging array;

    E=C*β*I/WD ² *cos ² ψ*(1/FNO) ²

    Where: I is the radiation intensity of the LED illumination source;

    ψ is the angle between the radiation position of the LED illumination source and the optical axis of the imaging system;

    WD is the focus working distance of the optical imaging system;

    FNO is the numerical aperture of the optical imaging lens;

    β is the optical reflectance of the biological tissue of the imaged object (iris or human face);

    The wavelength of the radiation emitted by the LED illumination source is absorbed by the iris or face biological tissue, and the reflection and scattering generate the optical reflectance of the biological tissue;

    C is the optical coefficient of the optical imaging system;

    C=1/16*cos ⁴ ω/(1+OM) ²

    among them:

    ω is the object angle of view of the incident light;

    OM is the optical magnification of the photoelectric imaging system;

    The PSU is a physical scale area ratio of each photodiode imaging pixel unit of the image sensor imaging array, PSU=(PS*PS)/cm ² ;

    The QR, QG, QB, QIR are photoelectric quantum conversion constants of each imaging pixel unit of the independent receiving wavelength channel in the image sensor imaging array;

    The digital values YR, YG, YB, YIR of the photoelectric conversion of the pixel unit independently receiving the wavelength channel in the imaging array of the image sensor are further output as the imaged raw RAW pixel data I{YR, YG, YB, YIR}.
13. The mobile terminal front-end and face/iris recognition integrated photoelectric imaging system according to claim 1, wherein

    The imaging array of the image sensor has at least 1920*1080 number of RGB-IR imaging pixel units; and its RGB-IR imaging pixel unit has a 4-direction 2*2 cross-interval arrangement format, and RGB-IR same wavelength channel pixels adopt 4 Directional cross-interval sampling method.
14. An imaging method for a photoelectric imaging system according to claim 1; characterized in that it comprises the following steps:

    1 generating radiation of an imaging wavelength continuous or synchronous pulse mode;

    2 After imaging wavelength filtering and physical refraction focusing, the imaging array of the image sensor receives the imaging wavelength channel for global frame mode or rolling line mode reset integration and reading;

    3 acquiring the original RAW pixel data of the imaged image output by the same imaging wavelength channel in the imaging array;

    4 according to the original RAW pixel data of the imaged image and the photoelectric conversion relationship of the pixel unit, driving the image sensor and the LED illumination source and the optical imaging lens to focus, and implementing feedback control;

    5 output image.
15. The imaging method of the photoelectric imaging system according to claim 14, wherein after said step 4, the method further comprises the step of: the processor chip respectively respectively for the same wavelength channel in the imaging array Interpolation reconstruction is performed between the first RAW data pixels, and the reconstructed image is interpolated by the processor chip.
16. The imaging method of the optoelectronic imaging system of claim 14, wherein the feedback control is selected from one or more of the following: feedback control image sensor reset integration time, digital and analog gain settings, feedback control LED current driver The radiation intensity, the angular position of the radiation, and the radiation time that drive the LED illumination source are used to improve imaging quality.
17. The imaging method of the photoelectric imaging system according to claim 14, wherein said processor chip performs optical black level correction BLC of the image sensor by the imaged raw RAW pixel data output by the image sensor, automatic exposure feedback control AEC, automatic Gain feedback controls the AGC.
18. The imaging method of the photoelectric imaging system according to claim 14, wherein the processor chip controls the LED current driver to drive the radiation intensity of the LED illumination source according to the current ambient light brightness by configuring the light sensor.
19. The imaging method of the photoelectric imaging system according to claim 14 or 15, wherein the imaging wavelength is an RGB imaging wavelength, an imaging array of the image sensor independently receives an RGB imaging wavelength, and the original RAW pixel data is I{YR, YG, YB}, each pixel of the interpolated reconstructed image contains RGB pixel values.
20. The imaging method of the photoelectric imaging system according to claim 19, wherein the photoelectric conversion value YR of the pixel unit of the R wavelength channel independently received by the imaging array of the image sensor is:

    YR=FF*QR*GAIN*EXP*ADCG*E*PSU

    The value YG of the photoelectric conversion of the pixel unit of the independently received G wavelength channel is:

    YG=FF*QG*GAIN*EXP*ADCG*E*PSU

    The value YB of the photoelectric conversion of the pixel unit of the independently received B wavelength channel is:

    YB=FF*QB*GAIN*EXP*ADCG*E*PSU

    Wherein the FF is a fill factor of the microlens, QR, QG, and QB are photoelectric quantum conversion constants of each imaging pixel unit independently receiving the RGB wavelength channel in the image sensor imaging array, and EXP is a reset integration time or exposure of the image sensor imaging array. Time, EXP synchronization is equal to the radiation time of the LED illumination source, GAIN is the digital and analog gain of the image sensor imaging array, ADCG is the ADC voltage analog-to-digital conversion quantization resolution of the image sensor imaging array, and E is the radiation received by the image sensor imaging array. Rate or irradiance, E = C * β * I / WD ² * cos ² ψ * (1/FNO) ² , PSU is the physical scale area of each photodiode imaging pixel unit of the image sensor imaging array.
21. The imaging method of the photoelectric imaging system according to claim 19, wherein said imaging lens focusing achieves focusing operation of the front photoelectric imaging system by calculating focus quality value feedback control of the imaged original RAW pixel data I{YR, YG, YB} The object distance WD is at least 30 cm-100 cm.
22. The imaging method of the photoelectric imaging system according to claim 14 or 15, wherein the imaging wavelength is an IR imaging wavelength, and the original RAW pixel data is I{YIR}.
23. The imaging method of the optoelectronic imaging system according to claim 22, wherein the value YIR of the pixel unit photoelectric conversion of the IR wavelength channel independently received by the imaging array of the image sensor is:

    YIR=FF*QIR*GAIN*EXP*ADCG*E*PSU

    Wherein the FF is a fill factor of the microlens, the QIR is a photoelectric quantum conversion constant of each imaging pixel unit independently receiving the IR wavelength channel in the image sensor imaging array, and the EXP is a reset integration time or an exposure time of the image sensor imaging array, and the EXP synchronization Equal to the radiation time of the LED illumination source, GAIN is the digital and analog gain of the image sensor imaging array, ADCG is the ADC voltage analog-to-digital conversion quantization resolution of the image sensor imaging array, and E is the radiance or irradiance received by the image sensor imaging array. , E = C * β * I / WD ² * cos ² ψ * (1/FNO) ² , PSU is the physical scale area of each photodiode imaging pixel unit of the image sensor imaging array.
24. The imaging method of the photoelectric imaging system according to claim 14, wherein said imaging lens focusing achieves a focus imaging distance WD of the photoelectric imaging system by at least 10 cm to 30 cm by calculating focus mass value feedback control of the imaged raw RAW pixel data.
25. The imaging method of the photoelectric imaging system of claim 14, wherein the method is applied to face and/or iris recognition.
26. The imaging method of an optoelectronic imaging system according to claim 15, wherein the interpolation algorithm is selected from the group consisting of: nearest neighbor interpolation Nearest-neighbor interpolation, linear interpolation Linear interpolation, bilinear interpolation bilinear interpolation, bicubic interpolation bicubicinterpolation, Strip interpolation Spline interpolation.
27. A method for performing interpolation reconstruction between original RAW data pixels of the same wavelength channel according to claim 15, comprising the steps of:

    I. Sampling the image values of the original RAW to be interpolated pixel data in the same wavelength channel output. The pixel values in the 4-direction crossing interval are:

    The same wavelength channel pixel Pixel_SC in the current direction, the same wavelength channel in the horizontal direction Pixel_SH, pixel Pixel_SV of the same wavelength channel in the vertical direction, pixel Pixel_SD of the same wavelength channel in the diagonal direction;

    II. Calculate the adjacent pixel interpolation in the four directions of the pixel data to be interpolated, Pixel_C, Pixel_H, Pixel_V, Pixel_D:

    The pixel of the current direction Pixel_C=Pixel_SC;

    Adjacent pixel interpolation in the horizontal direction Pixel_H=(Pixel_SH+Pixel_SC)/2;

    Pixel_V=(Pixel_SV+Pixel_SC)/2 in the adjacent pixel of the vertical direction;

    Pixel_D=(Pixel_SH+Pixel_SV+Pixel_SD+Pixel_SC)/4;

    III. Loop I-II step, traversing all the original RAW to be interpolated pixel data in the imaged image to form the final complete interpolated image data.

Images