CN105243368A - Mobile terminal front-facing and face/iris recognition integrated photoelectronic imaging method - Google Patents

Abstract

The invention provides a mobile terminal front-facing and face/iris recognition integrated photoelectronic imaging method. The method comprises the following steps of: (1), generating radiation of continuous imaging wavelength or synchronization pulse mode; (2), through imaging wavelength filtering and physical refractive focusing, performing a global frame mode or a rolling row mode reset integration and reading by an imaging array receiving imaging wavelength channel of an image sensor; (3), obtaining original RAW pixel data of imaging images output by the same imaging wavelength channel in an imaging array; (4), according to a photoelectric conversion relation of the original RAW pixel data of the imaging images and pixel units, driving the image sensor and an LED lighting source as well as an optical imaging lens to focus, thereby realizing feedback control; 5, outputting the images.

Description

A kind of preposition and face/iris recognition integrated optical Electrical imaging method of mobile terminal

Technical field

The present invention relates to bio-identification photoelectric field, especially a kind of mobile terminal for high security preposition and iris recognition integrated optical electric imaging system and method.

Background technology

Mobile terminal comprises smart mobile phone, flat board, wearable device etc., present infotech mobile development trend, and mobile terminal device is necessarily following is suitable for equipment the most widely.

At present, mobile terminal in real world applications pays at mobile security, account safety logs in, use extremely extensive in Web bank, as the utilization of the aspects such as remaining sum treasured, micro-letter, bank account management, although in its use procedure, for life brings great convenience, but a kind of novel economic crime rise gradually undertaken by features such as security of mobile terminal energy weaknesses.

And in mobile terminal, the customary means that prior art carries out identity validation is exactly Password Input, but the means security performance of this identity validation very low, only need to implant simple Virus on mobile terminals, just this password can be revealed, cause corresponding loss.In order to address this problem, still carry out mobile terminal safety authentication by the mode of bio-identification in the world; As the fingerprint identification technology based on the exploitation of AuthenTec company that Apple proposes, this Technology application, on mobile phone terminal, greatly improves the identity validation security of mobile terminal; But, in the process of fingerprint technique identification, because fingerprint is static, although have uniqueness, but be also extremely easily acquired finger print information, even be imitated, so along with fingerprint technique utilization on mobile terminals more and more extensive, its security also can be on a declining curve accordingly, so the iris recognition more in security with advantage solves very effective method in mobile terminal safety authentication procedures, and iris authentication system is that in existing bio-identification, degree of accuracy is the highest.

At present in all mobile terminals, in iris authentication system technology and product, do not realize the preposition photo electric imaging system and the integration of iris recognition photo electric imaging system that are used for face Self-timer.If but the preposition photo electric imaging system of face Self-timer and the integration of iris recognition photo electric imaging system separately independent realization, its cost increases greatly, and the volume of main mobile terminal cannot provide accommodation 2 to overlap the installing space of separately Individual optical imaging system.

Although in false proof divine force that created the universe security, iris recognition more has advantage compared with fingerprint recognition of face in addition, if but large-scale application moves the important events such as wholesale payment in such as mobile phone, still need further to upgrade the security technique of false proof divine force that created the universe In vivo detection, the threat eliminated safe hidden trouble.The object of bio-identification own is exactly for safety after all, and itself security is that most fundamental sum is most important.

Further, the mobile terminal of high security is preposition needs to solve following serious problem with iris recognition integrated optical electric imaging system:

1, preposition and iris recognition integrated optical electric imaging system in mobile terminal application, meet preposition photo electric imaging system and the integration of iris recognition photo electric imaging system of face Self-timer, its fixing fabric structure is in 8.5mm*8.5mm*6mm.

2, preposition and iris recognition integrated optical electric imaging system in mobile terminal application, needs the false proof divine force that created the universe biopsy method of a whole set of high security, ensures the security of bio-identification itself.

3. preposition and iris recognition integrated optical electric imaging system in mobile terminal application, needs the theory deduction of the transformational relation instructing photo electric imaging system to design.

4, preposition and iris recognition integrated optical electric imaging system in mobile terminal application, need greatly to reduce costs, cost could be applied within being reduced to 10 U.S. dollars on a large scale.

Overcoming the above problems is the ultimate challenge faced at present.

Summary of the invention

The invention provides the preposition and iris recognition integrated optical electric imaging system of a kind of mobile terminal for high security.

In order to solve the problems of the technologies described above, the invention provides a kind of preposition and face/iris recognition integrated optical Electrical imaging method of mobile terminal; Comprise the following steps: 1. produce imaging wavelength continuously or the radiation of synchronizing pulse pattern; 2. filter and physics Refractive focusing through imaging wavelength, the imaging array of imageing sensor receives imaging wavelength passage and carries out overall frame pattern or the reading of rolling row mode reset anomalous integral; 3. the original RAW pixel data of image that in imaging array, identical imaging wavelength passage exports is obtained; 4. according to the original RAW pixel data of image and pixel cell opto-electronic conversion relation, drive imageing sensor and LED illumination light source and optical imaging lens to focus on, realize FEEDBACK CONTROL; 5. output image.

Sum up foregoing description, preposition and iris recognition integrated optical electric imaging system and its method by the mobile terminal that present invention achieves high security:

1, preposition and iris recognition integrated optical electric imaging system, realize the preposition photo electric imaging system and the integration of iris recognition photo electric imaging system that meet face Self-timer, its fixing fabric structure is in 8.5mm*8.5mm*6mm.

2, preposition and iris recognition integrated optical electric imaging system, realizes the false proof divine force that created the universe biopsy method of a whole set of high security, ensures the security of bio-identification itself.

3. preposition and iris recognition integrated optical electric imaging system, realizes the theory deduction of setting forth the transformational relation instructing photo electric imaging system to design.

4, preposition and iris recognition integrated optical electric imaging system, realize greatly reducing costs, cost can be applied within being reduced to 10 U.S. dollars on a large scale.

Accompanying drawing explanation

Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.

Fig. 1 is the overall construction drawing of preposition and iris recognition integrated optical electric imaging system of the present invention;

Fig. 2 is each imaging pixel cell schematic diagram of the imageing sensor 105 imaging array individual reception RGB-IR wavelength channel in Fig. 1;

Fig. 3 is the reset anomalous integral sensing circuit schematic diagram that in Fig. 2, imageing sensor 105 reads electric charge (electronics) voltage for the anomalous integral that resets;

Fig. 4 is the pixel cell 4 direction 2*2 transpostion interval array format schematic diagram of the imaging array of imageing sensor 105RGB-IR wavelength channel in Fig. 2;

Fig. 5 is the neighborhood pixels original RAW interpolation of data value schematic diagram in 4 directions between identical wavelength channel pixel in imageing sensor 105 imaging array in Fig. 2;

Fig. 6 is the contrasted zones schematic diagram that the present invention defines iris image;

Fig. 7 is pupil and the iris diametric representation that the present invention defines iris image;

Fig. 8 is the optical reflection point schematic diagram that the present invention defines the cornea diverse location of iris image;

Fig. 9 is the schematic diagram that the present invention defines the eyelid physiological movement activity characteristic degree of the generation of eyeball physiological movement;

Figure 10 is the schematic diagram from axle stravismus physiological movement activity characteristic degree that the present invention defines the generation of eyeball physiological movement.

Embodiment

Embodiment 1, give the preposition and face/iris recognition integrated optical electric imaging system of a kind of mobile terminal and method.The method includes the method, the false proof divine force that created the universe biopsy method of iris that carry out interpolated reconstruction between preposition photoelectronic imaging method, iris recognition photoelectronic imaging method, original RAW data pixels to the identical wavelength channel used in preposition photoelectronic imaging method or iris recognition photoelectronic imaging method.

As shown in Figure 1, this system arranges optical filter (101 or 104) (for filtering imaging wavelength), optical imaging lens 102 (for physics Refractive focusing imaging wavelength) along imaging system optical axis 100, the fixed mounting 103 (for fixedly mounting optical imaging lens) of optical imaging lens, imageing sensor 105 (exporting image for opto-electronic conversion), lighting source 106 (comprise RGB-LED lighting source 106RGB and IR-LED lighting source 106IR, RGB-LED lighting source 106RGB is used for producing the radiation of RGB imaging wavelength to preposition photo electric imaging system, IR-LED lighting source 106IR is used for producing the radiation of IR imaging wavelength to iris recognition photo electric imaging system) and imaging system fixed installation substrate 107 (for providing preposition and iris recognition photo electric imaging system fixed installation carrier), imaging system fixed installation substrate 107 is also provided with Mobile terminal main board 110 (for realizing mobile terminal function circuit carrier), on Mobile terminal main board 110, integrated LED current driver 108 is (for drived control LED illumination light source radiation intensity, angle of radiation position, and radiated time) and processor chips 109 (for drived control LED current driver and imageing sensor).

In the specific embodiment of the invention 1, preposition and iris recognition integrated optical electric imaging system comprises the optical path of optical path for preposition photo electric imaging system and iris recognition photo electric imaging system; The optical path of preposition photo electric imaging system comprises as follows:

RGB-LED lighting source 106RGB radiation RGB imaging wavelength, optical filter (101 or 104) filters RGB imaging wavelength, optical imaging lens 102 physics Refractive focusing RGB imaging wavelength, the imaging array individual reception RGB wavelength channel of imageing sensor 105.

The optical path of iris recognition photo electric imaging system comprises as follows:

IR-LED lighting source 106IR radiation IR imaging wavelength, optical filter (101 or 104) filters IR imaging wavelength, optical imaging lens 102 physics Refractive focusing IR imaging wavelength, the imaging array individual reception IR wavelength channel of imageing sensor 105.

In specific embodiments of the invention 1, the imaging array of imageing sensor 105 is configured to the RGB-IR wavelength channel with individual reception function; LED illumination light source (LED illumination light source 106RGB and LED illumination light source 106IR-LED) is configured to have the radiated wavelength range mutually mated with the RGB-IR imaging wavelength passage of imageing sensor 105; Optical filter (101 or 104) is configured to have the wavelength-filtered scope of mutually mating with imageing sensor 105RGB-IR imaging wavelength passage; Optical imaging lens 102 is configured to have the focusing wavelength coverage of mutually mating with the RGB-IR imaging wavelength passage of imageing sensor 105; Processor chips 109 are configured to for driving imageing sensor 105 to arrange, i.e. the image pixel value data of the RGB-IR wavelength channel imaging array output of control chart image-position sensor 105, and drived control LED current driver 108; LED current driver 108 is configured to for drived control LED illumination light source (106RGB and 106IR-LED) radiation intensity, angle of radiation position, radiated time.

Above-described optical imaging lens 102 is configured to universal focus lens, can adopt as liquid driven lens, liquid crystal drive lens, VCM voice coil loudspeaker voice coil drive lens, MEMS to drive in lens, EDOF wave-front phase modulation lens or wafer scale array lenticule any one.

It is 400-700nm, IR imaging wavelength is 800-900nm that imaging wavelength of the present invention comprises RGB imaging wavelength; It is 400-650nm, IR imaging wavelength is 750-850nm that imaging wavelength in the present embodiment comprises RGB imaging wavelength.The specific embodiment of the invention 1 as an example, IR imaging wavelength range, imaging wavelength range is bandwidth characteristic in essence, it also can be equal to and is interpreted as and is described by imaging wavelength center (wavelengthcenter) and half-peak band width (FWHM), as 800-900nm scope can be expressed as, centre wavelength 850nm ± 30nm half-peak band width.Further, as imaging wavelength range change citing, can wavelength 850nm ± 15nm half-peak band width centered by arrowband.

Preposition photo electric imaging system adopts RGB imaging wavelength, and focusing task object distance WD is at least at 30-100cm; Iris recognition photo electric imaging system adopts IR imaging wavelength, and focusing task object distance WD is at least at 10-30cm.

Iris recognition photo electric imaging system has following optical imagery requirement:

The imaging wavelength WI of iris recognition photo electric imaging system meets: 800nm≤WI≤900nm or 750nm≤WI≤850nm;

The focusing task object distance WD of iris recognition photo electric imaging system meets: 10cm≤WD≤30cm;

The pixel spatial resolution PSR (pixelspatialresolution) of iris recognition photo electric imaging system should meet: PSR >=13pixel/mm;

The optical magnification OM (opticalmagnification) of iris recognition photo electric imaging system, should meet: OM=PS*PSR;

Wherein, above-described PS is the physical size of each imaging pixel cell of imageing sensor 105; PSR is the pixel spatial resolution of iris recognition photo electric imaging system;

The optical space resolution OSRI (opticalspatialresolutionofimageofplane) of iris recognition photo electric imaging system should meet in image space plane: when modulation transfer function 60% (MTF=0.6), 1/ (4*PS)≤OSRI≤1/ (2*PS) lp/mm (line is to every millimeter).

Preposition photo electric imaging system has following optical imagery requirement:

The imaging wavelength WI of preposition photo electric imaging system meets: 400nm≤WI≤700nm or 400nm≤WI≤650nm;

The focusing task object distance WD of preposition photo electric imaging system meets: 30cm≤WD≤100cm;

The pixel spatial resolution PSR (pixelspatialresolution) of preposition photo electric imaging system should meet: PSR≤4pixel/mm;

The optical magnification OM (opticalmagnification) of preposition photo electric imaging system, should meet: OM=PS*PSR;

Wherein, above-described PS is the physical size of each imaging pixel cell of imageing sensor 105; PSR is the pixel spatial resolution of preposition photo electric imaging system;

The optical space resolution OSRI (opticalspatialresolutionofimageofplane) of preposition photo electric imaging system should meet in image space plane: when modulation transfer function 60% (MTF=0.6), 1/ (4*PS)≤OSRI≤1/ (2*PS) lp/mm (line is to every millimeter).

In the present embodiment, each imaging pixel cell structure of the imaging array individual reception RGB-IR wavelength channel of imageing sensor 105 as shown in Figure 2.

Each imaging pixel cell of the imaging array individual reception RGB-IR wavelength channel of imageing sensor 105, comprises as follows: for converging the lenticule 201 (microlens) of photon 200; For the independent RGB-IR wavelength channel filter layer 202 (RGB-IRfilter) of filtered photons 200; Photon 200 for catching incident wavelength carries out the semiconductor photo diode 203 (photodiode) of photoelectricity quantum conversion; The reset anomalous integral sensing circuit 204 of electric charge (electronics) voltage is read for the anomalous integral that resets; For the analog-digital converter ADC205 that conversion voltage value is quantized values.Lenticule 201 (microlens), independent RGB-IR wavelength channel filter layer 202 (RGB-IRfilter), semiconductor photo diode 203 (photodiode), reset anomalous integral sensing circuit 204, analog-digital converter ADC205 set gradually from top to bottom; Incident photon 200 is successively by lenticule 201, independent RGB-IR wavelength channel filter layer 202 and semiconductor photo diode 203.

Lenticule 201 (microlens) has convergence photon efficiency or fill factor, curve factor (fillfactor) FF >=95%; RGB-IR wavelength channel filter layer 202 (RGB-IRfilter) produces independently RGB-IR wavelength channel for filtering; In the specific embodiment of the invention 1, B wavelength channel: 400nm – 500nm; G wavelength channel: 500nm – 600nm; R wavelength channel: 600nm – 700nm; IR wavelength channel: 800nm – 900nm; Or further, B wavelength channel: 400nm – 500nm; G wavelength channel: 500nm – 590nm; R wavelength channel: 590nm – 670nm; IR wavelength channel: 750nm – 850nm.Filter layer 202 has RGB-IR channel wavelength distribution function FR (λ), FG (λ), FB (λ), FIR (λ); Semiconductor photo diode 203 photon 200 had by receiving incident wavelength forms electron-hole pair at semiconductor PN and produces the conversion of photoelectricity quantum.

The photon 200 that semiconductor photo diode 203 receives incident wavelength carries out the conversion of photoelectricity quantum, the photoelectricity quantum conversion constant QR of RGB-IR incident wavelength, and QG, QB, QIR, be defined as follows:

$QR={\∫}_{\mathrm{\λ}=400nm}^{\mathrm{\λ}=700nm}r\left(\mathrm{\λ}\right)f\left(\mathrm{\λ}\right)S\left(\mathrm{\λ}\right)L\left(\mathrm{\λ}\right)FR\left(\mathrm{\λ}\right)d\mathrm{\λ}$

$QG={\∫}_{\mathrm{\λ}=400nm}^{\mathrm{\λ}=700nm}g\left(\mathrm{\λ}\right)f\left(\mathrm{\λ}\right)S\left(\mathrm{\λ}\right)L\left(\mathrm{\λ}\right)FG\left(\mathrm{\λ}\right)d\mathrm{\λ}$

$QB={\∫}_{\mathrm{\λ}=400nm}^{\mathrm{\λ}=700nm}b\left(\mathrm{\λ}\right)f\left(\mathrm{\λ}\right)S\left(\mathrm{\λ}\right)L\left(\mathrm{\λ}\right)FB\left(\mathrm{\λ}\right)d\mathrm{\λ}$

$QIR={\∫}_{\mathrm{\λ}=800nm}^{\mathrm{\λ}=900nm}ir\left(\mathrm{\λ}\right)f\left(\mathrm{\λ}\right)S\left(\mathrm{\λ}\right)L\left(\mathrm{\λ}\right)FIR\left(\mathrm{\λ}\right)d\mathrm{\λ}$

(EQ1)

λ is imaging wavelength, in the specific embodiment of the invention 1, preferred RGB imaging wavelength is 400-700nm, IR imaging wavelength is 800-900nm, as equivalent understanding, it is 750-850nm that RGB imaging wavelength further also can be selected to be 400-650nm, IR imaging wavelength.

G (λ), r (λ), b (λ), ir (λ) is respectively the photoelectricity conversion quantum efficiency sensitivity function of the photodiode 203RGB-IR wavelength channel of imageing sensor 105, FR (λ), FG (λ), FB (λ), FIR (λ) is respectively the filter layer 202RGB-IR channel wavelength distribution function of imageing sensor 105, f (λ) is the filterability Wavelength distribution function of optical filter (101 or 104), the radiance Wavelength distribution function that S (λ) is LED illumination light source (106RGB and 106IR-LED); The transmissivity Wavelength distribution function that L (λ) is optical imaging lens 102.

By the definition standard of ISO measurement unit, when 400-700nm imaging wavelength, the photoelectricity quantum conversion constant unit of QR, QG, QB is V/lux-sec (the every lux of volt is per second) or ke ^-/ lux-sec.Have in the specific embodiment of the invention 1 as 2.0V/lux-sec; When 800-900nm imaging wavelength, the photoelectricity quantum conversion constant unit of QIR is V/ (mw/cm ²-sec) (the every centimeters squared per second of the every milliwatt of volt) or ke ^-/ (mw/cm ²-sec); Have as 8000V/ (mw/cm in the specific embodiment of the invention 1 ²-sec).

The reset anomalous integral sensing circuit 204 of electric charge (electronics) voltage is read for the anomalous integral that resets, be respectively used to electric charge (electronics) the voltage V of reset integrating photodiode 203, and read electric charge (electronics) the voltage V (be respectively used to electric charge (electronics) the voltage V of reset integrating photodiode 203, and the formula of electric charge (electronics) the voltage V reading photodiode 203 being as follows) of photodiode 203;

Electric charge (electronics) voltage V=Q/C (EQ2)

Wherein: Q is the electric charge (electronics) of the reset integration of photodiode 203, C is the equivalent capacity of photodiode 203, further, photodiode 203 has full electric charge (electronics) capacity FCC (FullChargeCapacity), FCC>=10ke ^-(thousand electronics) (Kelectrons); Voltage amplitude anomalous integral sensing circuit 204 has electric charge (electronics)-voltage conversion gain CG (Conversiongain): CG=1/C=V/Q unit: μ V/e ^-the every electric charge of microvolt (electronics); The reset anomalous integral of reset anomalous integral reading (GlobalShutter) or rolling row mode that voltage amplitude anomalous integral sensing circuit 204 has overall frame pattern reads (RollingShutter).

Fig. 3 is that the imaging pixel cell of imageing sensor 105 in the specific embodiment of the invention 1 reads the reset anomalous integral sensing circuit schematic diagram of electric charge (electronics) voltage for the anomalous integral that resets (203 for photodiode, 205 is analog-digital converter ADC, M1, M2, M3 is transistor, Vdd is power supply, GND is ground, reset is the reset integral control signal of reset integral charge (electronics) voltage, read is for reading the reading control signal of electric charge (electronics) voltage, output is that the simulation-numerical value conversion quantized data of analog-digital converter ADC205 exports).

The concrete principle process of reset anomalous integral sensing circuit is as follows:

When for the integral charge that resets (electronics) voltage, the effective turn-on transistor M1 of reset integral control signal reset, incident photon 200 carries out photoelectricity quantum through photodiode 203 and converts stored charge (electronics) to, now read control signal read invalid, and transistor M3 is ended, do not produce reading;

When for reading electric charge (electronics) voltage, read the effective turn-on transistor M3 of control signal read, photodiode 203 stored charge (electronics) is passed through transistor M2, M3 exports analog-digital converter ADC205 to and changes quantized data output output, now the invalid transistor M1 that makes of reset integral control signal reset ends, not stored charge (electronics).

The number of significant digit that above-described analog-digital converter ADC205 has simulation-numerical value conversion quantization resolution is>=8; As 8,10,12 etc., form at least 2 ⁸=256LSB, 2 ¹⁰=1024LSB, 2 ¹²=4096LSB quantization resolution.

In the imaging array of imageing sensor 105, the physical size (PS) of each photodiode 203 imaging pixel cell of individual reception RGB-IR wavelength channel meets following condition: 1um/pixel≤PS≤3um/pixel (the every pixel of micron);

In imageing sensor 105 imaging array, the numerical value YR of the pixel cell opto-electronic conversion of the R wavelength channel of individual reception is:

YR＝FF*QR*GAIN*EXP*ADCG*E*PSU(EQ3)

In imageing sensor 105 imaging array, the numerical value YG of the pixel cell opto-electronic conversion of the G wavelength channel of individual reception is:

YG＝FF*QG*GAIN*EXP*ADCG*E*PSU(EQ4)

In imageing sensor 105 imaging array, the numerical value YB of the pixel cell opto-electronic conversion of the B wavelength channel of individual reception is:

YB＝FF*QB*GAIN*EXP*ADCG*E*PSU(EQ5)

In imageing sensor 105 imaging array, the numerical value YIR of the pixel cell opto-electronic conversion of the IR wavelength channel of individual reception is:

YIR＝FF*QIR*GAIN*EXP*ADCG*E*PSU(EQ6)

Wherein: above-described FF (fillfactor) is the fill factor, curve factor of lenticule 201 (microlens);

EXP is reset integrationTime integral time or the time shutter exposuretime of imageing sensor 105 imaging array, unit: S second; EXP synchronously equals LED illumination light source 106 radiated time;

GAIN is the Digital and analog gain of imageing sensor 105 imaging array, without unit;

ADCG is the ADC voltage analog-numerical value conversion quantization resolution of imageing sensor 105 imaging array, unit: LSB/V, value bit every volt;

E is radiance or the radiant illumination of the reception of imageing sensor 105 imaging array, unit: lux (lux) or mw/cm ²(every milliwatt every square centimeter);

E＝C*β*I/WD ²*cos ²ψ*(1/FNO) ²(EQ7)

Wherein: I is LED illumination light source 106 radiation intensity, the every sterad of unit milliwatt (mw/sr); ψ is the angle of LED illumination light source 106 radiation position and imaging system optical axis 100; WD is the focusing task object distance of optical imaging system; FNO is the numerical aperture of optical imaging lens 102, and namely relative opening is apart from reciprocal; β is the biological organism optical effect reflectivity (wavelength of LED illumination light source radiation through the absorption of iris or face biological tissue, reflection and scattering generation biological organism optical effect reflectivity) of imaging object (iris or face); C is the optical coefficient of optical imaging system;

C=1/16*cos ⁴ω/(1+OM) ²(EQ8) wherein: ω is the field angle of object of incident light; OM is the optical magnification of photo electric imaging system;

PSU is the physical size square measure ratio of each photodiode imaging pixel cell of imageing sensor 105 imaging array; PSU=(PS*PS)/cm ²;

QR, QG, QB, QIR are each imaging pixel cell photoelectricity quantum conversion constant of individual reception wavelength channel in imageing sensor 105 imaging array; The digital value YR of the pixel cell opto-electronic conversion of individual reception wavelength channel in imageing sensor 105 imaging array, YG, YB, YIR are further used as image original RAW pixel data I{YR, and YG, YB, YIR} export.

Imageing sensor 105 imaging array has the RGB-IR imaging pixel cell of at least 1920*1080 quantity.

The RGB-IR imaging pixel cell of imageing sensor 105 imaging array has 4 direction 2*2 transpostion interval array formats.

Fig. 4 is the pixel cell 4 direction 2*2 transpostion interval array format schematic diagram of the imaging array of the specific embodiment of the invention 1 imageing sensor 105RGB-IR wavelength channel;

Fig. 4 illustrates that every 4 direction 2*2 transpostion interval array formats repeat composition RGB-IR wavelength channel.The identical wavelength channel pixel of RGB-IR of imageing sensor 15 imaging array adopts 4 direction transpostion interval sampling modes, both that current direction was identical wavelength channel pixel Pixel_SC, horizontal direction be the pixel Pixel_SH of identical wavelength channel, vertical direction be the pixel Pixel_SV of identical wavelength channel, to angular direction is the pixel Pixel_SD of identical wavelength channel.4 the identical wavelength channel pixels indicated in concrete mode reference view 5.

Imageing sensor 105 described in the specific embodiment of the invention 1 can adopt BareDie (COB), and the encapsulation such as ShellUTCSP, NeoPACCSP, TSVCSP reduces volume further.

LED illumination light source (106RGB and 106IR-LED) described in the specific embodiment of the invention 1 has: RGB and the IR imaging wavelength of independent radiation.Further, RGB-LED lighting source (106RGB) has: the RGB imaging wavelength of radiation is mixed to form white visible light.

LED illumination light source 106 is made up of semiconductor light-emitting-diode, its physics forms identical with semiconductor photo diode, effect is contrary, and semiconductor light-emitting-diode changes outside radiated photons 200 by making the electron-hole pair of semiconductor PN produce photoelectricity quantum at applying electric current.

Further, the LED illumination light source (106RGB and 106IR-LED) described in the specific embodiment of the invention 1 has: the convex lens or the concave mirror that control half peak value radiation angle.Half described peak value radiation angle Ω meets:

Ω≥FOV；

Described FOV is the full filed angle of imaging system;

FOV≥2*arctan((DI*PS)/(2*EFL))；

Wherein: EFL is the equivalent focal length of optical imaging lens 102; DI is the quantity of the image planes diagonal pixels unit of imageing sensor 105 imaging array; PS is the physical size of the pixel cell of imageing sensor 105 imaging array;

LED is a kind of lambert's pointolite of 360 degree of angle radiation light in theory, adopts convex lens or concave mirror that the light collection of LED point light source radiation can be made to play the effect of the half peak value radiation angle controlling LED illumination light source.Convex lens can by optical plastic as optical grade PMMA, and the optical substrate materials such as optical grade PC manufacture, and concave mirror can be manufactured by high-reflectivity metal host material.

LED illumination light source (106RGB and 106IR-LED) described in the specific embodiment of the invention 1 has: one or more different angle of radiation position, for optimizing imaging viewing field and the image quality effect of photo electric imaging system, and provide the In vivo detection of the optical reflection of cornea diverse location.Be positioned on the left of imaging system optical axis 100 and/or the different angle of radiation positions (left side Psrl, right side Psrr, left and right sides Psrl & Psrr) on right side as adopted.

LED illumination light source (106RGB and 106IR-LED) described in the specific embodiment of the invention 1 has: the continuous or pulsed irradiation sessions synchronous with imageing sensor 105 and radiation intensity, for the image quality effect of combined optimization photo electric imaging system.LED illumination light source (106RGB and 106IR-LED) can adopt the encapsulation such as SMD surface patch to reduce volume further.

Optical filter (101 or 104) described in the specific embodiment of the invention 1 has: filter RGB and IR imaging wavelength, light, reflection and/or the light absorbed outside RGB and IR imaging wavelength range in transmission RGB and IR imaging wavelength range.

Further, the optical filter (101 or 104) described in the specific embodiment of the invention 1 has:

Light filterability Fi≤10.0% in RGB and IR imaging wavelength range,

Light filterability Fo >=99.9% outside RGB and IR imaging wavelength range;

Or equivalence

Light transmission Ti >=90.0% in RGB and IR imaging wavelength range,

Light transmission To≤0.1% outside RGB and IR imaging wavelength range.

Described optical filter (101 or 104) can at optical clear glass, coloured glass, the optical substrate materials such as optical plastic carry out the realization of surface multi-layer plated film, and optical filter (101 or 104) thickness≤0.3mm, further understand as the present invention is equivalent, described optical filter (101 or 104) can adopt and carry out multicoating equivalence on optical imaging lens 102 surface as optical substrate and substitute.

Optical imaging lens 102 described in the specific embodiment of the invention 1 has: physics Refractive focusing RGB and IR imaging wavelength.Further, the optical imaging lens 102 described in the specific embodiment of the invention 1 has RGB and IR imaging wavelength:

Surface maximum reflectivity Rmax≤1.0%, surperficial average reflectance Ravg≤0.35%;

Or equivalence

Surface minimum transmittance Tmin >=99.0%, surperficial average transmittance Tavg >=99.65%.

Above-described optical imaging lens 102 can at aspherics plastics as optical grade PMMA, and the optical substrate materials such as optical grade PC carry out surface multi-layer anti-reflection or anti-reflection coating realizes; And realize by 3-5P sheet aspherics plastics Shooting Technique, TTL optics overall length≤6mm.

Described optical imaging lens has: focal length EFL, and numerical aperture FNO meets:

3mm≤EFL≤6mm，2.0≤FNO≤4.0。

Optical imaging lens 102 is configured to universal focus lens, comprises liquid driven lens, liquid crystal drive lens, VCM voice coil loudspeaker voice coil drive lens, MEMS to drive in lens, EDOF wave-front phase modulation lens or wafer scale microarray lens any one.

Described liquid driven lens comprise fixed focus lenses, liquid lens, for controlling the voltage driver of liquid lens;

Described liquid crystal drive lens comprise fixed focus lenses, liquid crystal lens, for controlling the voltage driver of liquid crystal lens;

Described liquid driven lens and liquid crystal drive lens are regulated by the diopter that changes incident light both optical power to realize auto-focus function.

Described VCM voice coil loudspeaker voice coil drives lens to comprise fixed focus lenses, VCM voice coil loudspeaker voice coil, for the current driver of control VCM voice coil loudspeaker voice coil;

Described VCM voice coil loudspeaker voice coil drives lens by Jiao after change optics both optical image apart from regulating to realize auto-focus function.

Described MEMS (microelectromechanical systems) drives lens to comprise fixed focus lenses, and MEMS lens, for the electrostatic actuator of control MEMS lens.

Described MEMS drives lens by changing the optical position of MEMS lens to realize auto-focus function.

Described wafer scale array lenticule, is calculated to be picture (ComputationalImaging) by microlens array and realizes the dark Reconstruction of The Function of 3D panorama.

Described EDOF wave-front phase modulation lens comprise lens, wave-front phase modulation optical element;

Described EDOF wave-front phase modulation is by after the modulation of wave-front phase modulation optical element, and liftering demodulation is rebuild and realized extended depth-of-field function.

Due to above-described EDOF wave-front phase modulation lens, to have cost low, and volume is little, and structure is simple, without advantages such as complicated drivings.So the specific embodiment of the invention 1 is preferably described in detail for EDOF wave-front phase modulation lens, EDOF wave-front phase modulation lens imaging, it ensures maximizing field depth (depthoffield) scope under luminous flux condition with traditional optical imaging system more than 10 times, simplifies the design of optical system visual field (viewoffield) and aberration correction simultaneously.

Wave-front phase modulation optical element is as the phase place pupil between lens.

Definition wave-front phase modulation optical element has odd symmetric pupil phase modulation function Φ (x, y):

$\mathrm{\Φ}(x,y)=\underset{m=0}{\overset{M}{\Σ}}\underset{n=0}{\overset{N}{\Σ}}{\mathrm{\α}}_{mn}{x}^m{y}^n$

Φ(-x，-y)＝-Φ(x，y)

Wherein: M, N are exponent number, α mn is numeric factors.

The specific embodiment of the invention 1 considers the requirement such as numerical evaluation and the actual complexity manufactured when practical application, the general low order adopting exponent number to be less than 9 is exponent number as adopted 7,5,3.

The wave-front phase modulation optical element of the specific embodiment of the invention 1 manufactures and designs by micron-sized aspheric surface injection moulding process, can reduce costs also structure simple, be easy to batch production.

Wave-front phase modulation optical system has optical point spread function PSF (u, v; θ)

PSF(u，v；θ)＝|h(u，v；θ)| ²

$h(u,v;\mathrm{\θ})=\frac{1}{\mathrm{\λ}f\sqrt{A}}\underset{-\mathrm{\∞}}{\overset{+\mathrm{\∞}}{\∫\∫}}P(x,y)\exp \left\{i\[\frac{2\mathrm{\π}}{\mathrm{\λ}f}\left(ux+vy\right)+\mathrm{\Φ}\left(x,y\right)+\mathrm{\θ}\left(x^2+y^2\right)+Zernike\left(x,y\right)\]\right\}dxdy$

$\mathrm{\θ}=\frac{A}{\mathrm{\λ}}\left(\frac{1}{f}-\frac{1}{d_o}-\frac{1}{d_i}\right)$

Wherein: the pupil function that P (x, y) is optical system,

P (x, y)=1, when integral parameter (x, y) is included within the scope of pupil;

P (x, y)=0, when integral parameter (x, y) is not included within the scope of pupil;

Pupil function also can be of equal value the field of definition areal extent being expressed as two-dimentional definite integral, the field of definition area integral scopes namely limiting 2 dimension definite integral are pupil scope.The point that (x, y) is pupil plane, (u, v) is the point of picture plane.

θ is diffracted wave aberration or defocuses parameter; λ is imaging wavelength, and f is the equivalent focal length of optical system, d _ofor entrance pupil plane is to object plane distance, d _ifor exit pupil plane is to picture plan range, A is pupil area, the Zernike aberration function that Zernike (x, y) is optical system;

Reality is considered optical system has global characteristics, the employing polar coordinates integral representation that above-mentioned two-dimensional integration also can be of equal value.According to the known point spread function PSF of the definition of pupil phase modulation function Φ (x, y) (u, v; θ) be even symmetry.

There is modulation transfer function (MTF) and diffracted wave aberration (diffraction-aberration) space/frequency domain pupil phase modulation function Φ (x in conjunction with optimized wave-front phase modulation optical system, y) satisfy condition: diffracted wave aberration optimization degree J global minimization, J=0 in theory.

Wherein: diffracted wave aberration optimization degree J determines by give a definition:

Wherein: [-θ 0, θ 0] is for the diffracted wave aberration of specifying during practical application or defocus parameter symmetrical range;

Simultaneously according to optical theory, wave-front phase modulation optical system has optical transfer function OTF (s, t; θ) be PSF (u, v; Fourier transfer pair θ), and have following inference:

$J={\∫}_{-{\mathrm{\θ}}_0}^{{\mathrm{\θ}}_0}\∫\∫{\left|\left(\∂/\∂\mathrm{\θ}\right)\[OTF\left(s,t;\mathrm{\θ}\right)\]\right|}^{2}dsdtd\mathrm{\θ}$

Modulation transfer function optimization degree M determines by give a definition:

$\begin{array}{c}M={\∫}_{-{\mathrm{\θ}}_0}^{{\mathrm{\θ}}_0}\∫\∫{\left|\[PSF\left(u,v;\mathrm{\θ}\right)\]\right|}^{2}dudvd\mathrm{\θ}\\ ={\∫}_{-{\mathrm{\θ}}_0}^{{\mathrm{\θ}}_0}\∫\∫{\left|\[OTF\left(s,t;\mathrm{\θ}\right)\]\right|}^{2}dsdtd\mathrm{\θ}\\ ={\∫}_{-{\mathrm{\θ}}_0}^{{\mathrm{\θ}}_0}\∫\∫{\left|\[MTF\left(s,t;\mathrm{\θ}\right)\]\right|}^{2}dsdtd\mathrm{\θ}\end{array}$

According to above-mentioned definition and inference provable pupil phase modulation function Φ (x, y) meeting under diffracted wave aberration optimization degree J global minimization condition, wave-front phase modulation optical system has modulation transfer function and diffracted wave aberration space/frequency domain in conjunction with optimization.And in theory under J=0 condition, Wave-front phase is fixed constant relative to diffracted wave aberration, original image can be recovered by simple digital demodulation process.

Picture plane picture O (u, v) of imageing sensor 105 imaging is recovered by digital signal processing image demodulation, and result rebuilds original digital image I (x, y).Digital signal processing image demodulation recovers specifically:

I(x，y)＝H(u，v)*g(u，v)＝∫∫H(x-u，y-v)g(u，v)dudv

Wherein, H (u, v)=O (u, v)-N (u, v);

The picture plane picture that O (u, v) is imageing sensor 105 imaging, the equivalent noise function that N (u, v) is photo electric imaging system, g (u, v)=F ^-1(1/MTF (s, t)), i.e. MTF (s, t) Fourier of falling inverse of a number conversion, MTF (s, t) is predetermined modulation transfer function (MTF) function of wave-front phase modulation optical system, and * represents 2 dimension convolution of functions integrations.

Due to MTF (s, t) above-mentioned predetermined optical system is determined, therefore g (u, v) also determine, and g (u, v) convolution yardstick is also compactly support, and nearlyer step equivalent noise function N (u, v) is also determined for above-mentioned predetermined photo electric imaging system.So above-mentioned digital signal processing image demodulation recovers to express with mathematics discrete form, the specific embodiment of the invention 1 can optimize integer code by digital signal processing appts real-time implementation such as FPGA or DSP, or by the software algorithm real-time implementation of processor chips 109.

The specific embodiment of the invention 1, has different optical imaging requirements, imaging wavelength, pixel spatial resolution, optical magnification owing to iris recognition photo electric imaging system and preposition photo electric imaging system, optical space resolution, focusing task object distance range.

Above-described iris recognition photo electric imaging system has following optical imagery requirement:

The imaging wavelength WI of iris recognition photo electric imaging system meets:

800nm≤WI≤900nm or 750nm≤WI≤850nm;

The focusing task object distance WD of iris recognition photo electric imaging system meets:

10cm≤WD≤30cm。

The pixel spatial resolution PSR (pixelspatialresolution) of iris recognition photo electric imaging system should meet: PSR >=13pixel/mm;

The optical magnification OM (opticalmagnification) of iris recognition photo electric imaging system, should meet:

OM＝PS*PSR

Wherein said:

PS is the physical size of each imaging pixel cell of imageing sensor;

PSR is the pixel spatial resolution of iris recognition photo electric imaging system;

The optical space resolution OSRI (opticalspatialresolutionofimageofplane) of iris recognition photo electric imaging system should meet in image space plane: when modulation transfer function 60% (MTF=0.6), 1/ (4*PS)≤OSRI≤1/ (2*PS) lp/mm (line is to every millimeter).

Described preposition photo electric imaging system has following optical imagery and requires:

The imaging wavelength WI of preposition photo electric imaging system meets:

400nm≤WI≤700nm or 400nm≤WI≤650nm

The focusing task object distance WD of preposition photo electric imaging system meets:

30cm≤WD≤100cm。

The pixel spatial resolution PSR (pixelspatialresolution) of preposition photo electric imaging system should meet: PSR≤4pixel/mm;

The optical magnification OM (opticalmagnification) of preposition photo electric imaging system, should meet:

OM＝PS*PSR

Wherein said:

PS is the physical size of each imaging pixel cell of imageing sensor;

PSR is the pixel spatial resolution of preposition photo electric imaging system;

The optical space resolution OSRI (opticalspatialresolutionofimageofplane) of preposition photo electric imaging system should meet in image space plane: when modulation transfer function 60% (MTF=0.6), 1/ (4*PS)≤OSRI≤1/ (2*PS) lp/mm (line is to every millimeter).

Preposition photoelectronic imaging method of the present invention, comprises the following steps:

1. processor chips 109 control LED current driver 108 driving LED lighting source 106 (106RGB) and produce RGB imaging wavelength continuously or the radiation of synchronizing pulse pattern;

2. filter and physics Refractive focusing through RGB imaging wavelength, imaging array individual reception 3 RGB wavelength channels of imageing sensor 105 carry out overall frame pattern or rolling row mode reset integration (exposure) and read;

3. processor chips 109 obtain the image original RAW pixel data I{YR that in imaging array, 3 identical RGB wavelength channels export respectively, YG, YB};

4. processor chips 109 are according to image original RAW pixel data I{YR, YG, YB} and pixel cell opto-electronic conversion relation, drive imageing sensor 105 and LED illumination light source 106 and optical imaging lens 102 to focus on, realize FEEDBACK CONTROL;

5. processor chips 109 are respectively to the original RAW data I{YR of 3 identical RGB wavelength channels in imaging array, carry out interpolated reconstruction between YG, YB} pixel;

6. processor chips 109 export the image I{r after interpolated reconstruction, and g, b}, each pixel comprises rgb pixel value respectively.

Further explain, in above-described step, the imaging array of imageing sensor 105 is N*M RGB-IR image-generating unit, the original RAW data I{YR of 3 identical RGB wavelength channels, YG, YB} is each is respectively the individual quantity image-generating unit of (N/2) * (M/2), and (N/2) * (M/2) the individual quantity image-generating unit pixel interpolating of each identical wavelength channel is redeveloped into N*M number of pixels.Between (N/2) * (M/2) pixel of identical wavelength channel, carry out interpolated reconstruction is respectively N*M number of pixels, and both each pixel comprised rgb pixel value respectively.

Further explain, in above-described step 4, pixel cell opto-electronic conversion relation comprises formula EQ3, EQ4, EQ5.The image original RAW pixel data I{YR that processor chips 109 can export according to imageing sensor 105, YG, YB} and corresponding formula EQ3, EQ4, EQ5, the reset integral time of FEEDBACK CONTROL imageing sensor 105, Digital and analog gain is arranged, the radiation intensity of FEEDBACK CONTROL LED current driver 108 driving LED lighting source 106, angle of radiation position, and radiated time is for improving image quality.

Optical imaging lens 102 focuses on by calculating image original RAW pixel data I{YR, and the focus mass value FEEDBACK CONTROL of YG, YB} realizes preposition photo electric imaging system focusing task object distance WD at least 30cm-100cm.Traditional Atomatic focusing method can be adopted as focus quality peak-peak iterative search.

Processor chips 109 can pass through light sensor (according to situation about using, so independent additional device can be set in processor chips 109, its method arranged is present known technology, or such light sensor function can also be realized by commercially purchasing corresponding processor chips) according to current environmental light brightness, control the radiation intensity of LED current driver 108 driving LED lighting source 106RGB.Further, if when the specific embodiment of the invention 1 light sensor judges to be greater than more than 500-1000lux according to current environmental light brightness, LED current driver drives LED illumination light source 106RGB is closed.

Further, the original RAW pixel data of the image that processor chips 109 can be exported by imageing sensor 105, the optical black level performing imageing sensor corrects BLC, RGB passage Automatic white balance AWB, RGB channel color matrix correction CCM, rims of the lens shadow correction lensshadingcorrection, automatic exposure FEEDBACK CONTROL AEC, automatic gain FEEDBACK CONTROL AGC etc.

Iris recognition photoelectronic imaging method, comprises the following steps:

1. processor chips 109 control LED current driver 108 driving LED lighting source 106 (106IR) and produce IR imaging wavelength continuously or the radiation of synchronizing pulse pattern;

2. filter and physics Refractive focusing through IR imaging wavelength, imageing sensor 105 imaging array individual reception IR wavelength channel carries out overall frame pattern or rolling row mode reset integration (exposure) and reads;

3. processor chips 109 obtain the image original RAW pixel data I{YIR} that in imaging array, identical IR wavelength channel exports;

4. processor chips 109 are according to image original RAW pixel data I{YIR} and pixel cell opto-electronic conversion relation, drive imageing sensor 105 and LED illumination light source 106 and optical imaging lens 102 to focus on, realize FEEDBACK CONTROL;

5. in processor chips 109 pairs of imaging arrays identical IR wavelength channel original RAW data I{YIR} pixel between carry out interpolated reconstruction;

6. processor chips 109 export the image I{ir} after interpolated reconstruction.

Further explain, in above step, the imaging array of imageing sensor 105 is N*M RGB-IR image-generating unit, the original RAW data I{YIR} of identical IR wavelength channel is the individual quantity image-generating unit of (N/2) * (M/2), and (N/2) * (M/2) the individual quantity image-generating unit pixel interpolating of identical IR wavelength channel is redeveloped into N*M number of pixels.Between (N/2) * (M/2) pixel of identical IR wavelength channel, carry out interpolated reconstruction is N*M number of pixels.

Further explain, above-described step 4 pixel cell opto-electronic conversion relation comprises formula EQ6.The original RAW pixel data of image that processor chips 109 can export according to imageing sensor 105 and formula EQ6, the reset integral time of FEEDBACK CONTROL imageing sensor 105, Digital and analog gain is arranged, the radiation intensity of FEEDBACK CONTROL LED current driver 108 driving LED lighting source 106, angle of radiation position, and radiated time is for improving image quality.The focus mass value FEEDBACK CONTROL that optical imaging lens 102 focuses on by calculating image original RAW pixel data I{YIR} realizes iris recognition photo electric imaging system focusing task object distance WD at least 10cm-30cm.Traditional Atomatic focusing method can be adopted as focus quality peak-peak iterative search.

Further, the original RAW pixel data of the image that processor chips 109 can be exported by imageing sensor 105, the optical black level performing imageing sensor corrects BLC, automatic exposure FEEDBACK CONTROL AEC, automatic gain FEEDBACK CONTROL AGC.

As the equivalent simplification citing understood of the specific embodiment of the invention 1, described iris recognition photoelectronic imaging method, comprises the following steps:

1. processor chips 109 control LED current driver 108 driving LED lighting source (106IR) and produce IR imaging wavelength continuously or the radiation of synchronizing pulse pattern;

2. filter and physics Refractive focusing through IR imaging wavelength, imageing sensor 105 imaging array individual reception IR wavelength channel carries out overall frame pattern or rolling row mode reset integration (exposure) and reads;

3. processor chips 109 obtain the image original RAW pixel data I{YIR} that in imaging array, identical IR wavelength channel exports;

4. processor chips 109 are according to image original RAW pixel data I{YIR} and pixel cell opto-electronic conversion relation, drive imageing sensor 105 and LED illumination light source (106IR) and optical imaging lens 102 to focus on, realize FEEDBACK CONTROL;

5. in processor chips 109 pairs of imaging arrays, the original RAW data I{YIR} pixel of identical IR wavelength channel exports.

Above-mentioned simplification citing is understood as the specific embodiment of the invention 1 is equivalent, and described iris recognition photoelectronic imaging method is removed between original RAW data I{YIR} pixel and carried out interpolated reconstruction step.

4 direction neighborhood pixels original RAW interpolation of data value-based algorithm between identical wavelength channel pixel in interpolated reconstruction employing imaging array described in the specific embodiment of the invention 1.

Described interpolation algorithm comprises tradition:

The most contiguous interpolation Nearest-neighborinterpolation, linear interpolation Linearinterpolation, bilinear interpolation bilinearinterpolation, bicubic interpolation bicubicinterpolation, spline interpolation Splineinterpolation etc.

Consider that iris or this kind of image texture of face have nature continuity Characteristics, based on the correlativity between image pixel, the invention provides interpolation algorithm more fast and effectively, simultaneously with reference to figure 5 schematic diagram, comprise the following steps:

1. the pixel value of the image original RAW interpolation pixel data 4 direction transpostion interval of the identical wavelength channel output of sampling, be respectively: the identical wavelength channel pixel Pixel_SC in current direction, the pixel Pixel_SH of the identical wavelength channel of horizontal direction, the pixel Pixel_SV of the identical wavelength channel of vertical direction, to the pixel Pixel_SD of the identical wavelength channel of angular direction;

The transpostion interval sampling of identical wavelength channel pixel 4 direction is because the pixel cell of the identical wavelength channel of imaging array is according to 4 direction 2*2 transpostion interval array formats.

2. calculate interpolation pixel data 4 direction neighborhood pixels interpolation, Pixel_C, Pixel_H, Pixel_V, Pixel_D:

The pixel Pixel_C=Pixel_SC in current direction;

The neighborhood pixels interpolation Pixel_H=(Pixel_SH+Pixel_SC)/2 of horizontal direction;

The neighborhood pixels interpolation Pixel_V=(Pixel_SV+Pixel_SC)/2 of vertical direction;

To the neighborhood pixels interpolation Pixel_D=(Pixel_SH+Pixel_SV+Pixel_SD+Pixel_SC)/4 of angular direction;

3. circulation step 1-step 2, traversal calculates original RAW interpolation pixel datas all in image, forms finally complete interpolated image data.

As equivalent understanding, the neighborhood pixels interpolation algorithm in above-mentioned 4 directions in like manner can promote interpolation algorithm.

The invention provides a kind of false proof divine force that created the universe biopsy method of iris of high security, having, to iris counterfeit, there is real-time detectability, for ensureing the security of bio-identification itself, comprising:

Should adopt and have with one of under type or multiple:

The biological organism optical activity characteristic real-time detection method that the radiation of 1.RGB-IR imaging wavelength produces;

The pupil iris diameter rate of change biological tissue activity characteristic real-time detection method that the radiation of 2.RGB-IR imaging wavelength produces;

The optics of cornea reflection position real-time detection method that the radiation of 3.RGB-IR imaging wavelength produces;

4. the activity characteristic real-time detection method of eyeball physiological movement.

The above-described iris false proof divine force that created the universe biopsy method flow processing speed that is detected as in real time is greater than image acquisition frame rate; Described image acquisition frame rate is 120fps, 90fps, 60fps, 30fps, and the higher iris of image acquisition frame rate false proof divine force that created the universe biopsy method reliability is stronger.

The biological organism optical activity characteristic real-time detection method that RGB-IR imaging wavelength radiation of the present invention produces, comprises the following steps:

1. processor chips 109 control LED current driver 108 driving LED lighting source 106 (106RGB and 106IR) and produce RGB imaging wavelength radiation and the radiation of IR imaging wavelength in real time;

2. the RGB wavelength channel of processor chips 109 real-time image acquisition sensor 105 imaging array and real time imagery image IRGB and IIR of IR wavelength channel output;

3. processor chips 109 distinguish the contrast C sk of RGB image IRGB and IR image IIR in real-time calculation procedure 2, Csi, Cip, Csip, Ckip data, are respectively IRGB_Csk, IRGB_Csi, IRGB_Cip, IRGB_Csip, IRGB_Ckip, IIR_Csk, IIR_Csi, IIR_ip, IIR_Csip, IIR_Ckip;

Wherein:

Csk is the contrast between skin area and iris region;

Csi is the contrast between sclera region and iris region;

Cip is the contrast between iris region and pupil region;

Csip is sclera region, the mutual contrast between iris region and pupil region;

Ckip is skin area, the mutual contrast between iris region and pupil region;

Csk＝S(Iskin)/S(Iiris)；

Csi＝S(Isclera)/S(Iiris)；

Cip＝S(Iiris)/S(Ipupil)；

Csip＝(S(Isclera)-S(Iiris))/(S(Iiris)-S(Ipupil))；

Ckip＝(S(Iskin)-S(Iiris))/(S(Iiris)-S(Ipupil))；

Ipupil represents pupil region pixel;

Iiris represents iris region pixel;

Isclera represents sclera region pixel;

Iskin represents skin area pixel;

Described function S is respective regions pixels statistics valuation functions, and the method that described pixels statistics valuation functions adopts comprises: statistics with histogram, frequency statistics, mean value is added up, weighted mean Data-Statistics, middle Data-Statistics, energy value is added up, variance statistic, space-frequency domain wave filter etc.; Respective regions pixels statistics valuation functions S of the present invention is not limited to above-mentioned citing, and additive method should by equivalent understanding.

4. processor chips 109 calculate picture contrast activity change rate Fsk and Fsi, Fip, Fsip, the Fkip of RGB imaging wavelength radiation and the radiation of IR imaging wavelength respectively in real time;

Wherein:

Fsk＝IRGB_Csk/IIR_Csk*100％；

Fsi＝IRGB_Csi/IIR_Csi*100％；

Fip＝IIR_Cip/IRGB_Cip*100％；

Fsip＝IRGB_Csip/IIR_Csip*100％；

Fkip＝IRGB_Ckip/IIR_Ckip*100％；

5. according to RGB-IR imaging wavelength irradiating biological organism optical activity characteristic preset value, with data value Fsk in step 4, Fsi, Fip, Fsip, the active contrast respective change rate of Fkip, judges any one or multinomial condition Fsk>300%, Fsi>300%, Fip>300%, Fsip>900%, Fkip>900%, realize detecting iris condition of living organism in real time.

Fig. 6 is the contrasted zones schematic diagram that the specific embodiment of the invention 1 defines iris image.As shown in schematic diagram 6 indicates, wherein Isclera, Iiris, Ipupil, Iskin definition:

1 represents pupil region pixel for pupil region Ipupil;

2 represent iris region pixel for iris region Iiris;

3 represent sclera region pixel for sclera region Isclera;

4 represent skin area pixel for skin area Iskin;

The pupil iris diameter rate of change bioactive properties detection method that RGB-IR imaging wavelength radiation described in the specific embodiment of the invention 1 produces, comprises the following steps:

1. processor chips 109 control LED current driver 108 driving LED lighting source 106 (106RGB and 106IR) and produce varying strength dil in real time respectively, RGB and IR imaging wavelength radiation under con and time conditions, stimulates pupil to produce biological tissue activity enlargement and contraction;

2. real time imagery image Idil and Icon under the different radiated time that exports of the RGB-IR wavelength channel of processor chips 109 respectively real-time image acquisition sensor 105 imaging array and strength condition;

3. processor chips 109 respectively in real-time calculation procedure 2 in image Idil and Icon the pupil of iris image with iris diameter than ρ data, be respectively ρ dil and ρ con;

ρ＝Dpupil/Diris，

Described Dpupil is pupil diameter length in pixels;

Described Diris is iris diameter length in pixels;

4. processor chips 109 calculate corresponding activity change rate Δ ρ=(ρ dil-ρ con) * 100% in real time;

5. according to the preset value of the biological tissue activity enlargement and contraction of the real-time stimulation pupil generation under varying strength and time conditions, with the corresponding activity change rate of data value Δ ρ in step 4, judge Δ ρ >10% condition, realize detecting iris condition of living organism in real time.

Fig. 7 is pupil and the iris diametric representation that the present invention defines iris image.As shown in schematic diagram 7 indicates, wherein Dpupil, Diris definition:

Described Dpupil is pupil diameter length in pixels;

Described Diris is iris diameter length in pixels;

The optics of cornea reflection position detection method that RGB-IR imaging wavelength radiation of the present invention produces, comprises the following steps:

1. processor chips 109 control LED current driver 108 driving LED lighting source 106 (106RGB or 106IR) and produce left side Psrl in real time respectively, right side Psrr and side, left and right 2 Psrl & Psrr diverse location condition under the radiation of RGB and IR imaging wavelength, be formed in the optics of cornea reflection spot of diverse location;

2. the real time imagery image Isr of the RGB-IR wavelength channel output of processor chips 109 difference real-time image acquisition sensor 105 imaging array;

3. processor chips 109 distinguish the optics of cornea reflection point position data Psr of image Isr in real-time calculation procedure 2;

4. the preset value under diverse location condition is produced respectively in real time according to LED illumination light source 106, and the optics of cornea reflection point position Psr calculated in step 3, judge whether optics of cornea reflection point position Psr meets corresponding LED illumination light source locality condition:

If LED illumination light source position is Psrl, Psr=Psrl should be met;

If LED illumination light source position is Psrr, Psr=Psrr should be met;

If LED illumination light source position is Psrl & Psrr, Psr=Psrl & Psrr should be met;

Realize detecting iris condition of living organism in real time.

Fig. 8 is the optical reflection point schematic diagram that the present invention defines the cornea diverse location of iris image.As shown in schematic diagram 8 indicates, wherein Psrl, Psrr, Psrl & Psrr defines:

Described Psrl is the optics of cornea reflection spot that LED illumination light source produces leftward position;

Described Dsrr is the optics of cornea reflection spot that LED illumination light source produces right positions;

Described Psrl & Psrr is the optics of cornea reflection spot that LED illumination light source produces left and right 2 side positions.

The activity characteristic real-time detection method of eyeball physiological movement of the present invention, comprises the eyelid movement activity characteristic of the generation detecting eyeball physiological movement in real time, comprises the following steps:

1. processor chips 109 control LED current driver 108 driving LED lighting source 106 (106RGB or 106IR) and produce the radiation of RGB-IR imaging wavelength in real time;

2. the real time imagery image Iem of the RGB-IR wavelength channel output of processor chips 109 real-time image acquisition sensor 105 imaging array;

3. the eyelid movement characteristic level data EM of the generation of the eyeball physiological movement of image Iem in the real-time calculation procedure 2 of processor chips 109;

Wherein:

The eyelid movement characteristic degree EM of the generation of eyeball physiological movement is defined as:

EM＝Visual_Iris/All_Iris*100％；

All_Iris is the pixel quantity in iris entire area region in image Iem;

Visual_Iris is the pixel quantity in the iris useful area region that in image Iem, eyelid movement is formed;

4. calculate the activity change Shuai Zhi ⊿ EM of the eyelid movement characteristic degree EM of the generation of eyeball physiological movement in real time;

5. according to the activity change rate preset value of the eyelid movement characteristic degree of the generation of eyeball physiological movement, with the activity change rate value ⊿ EM of the eyelid movement characteristic level data EM that the eyeball physiological movement calculated in step 4 produces; sentence disconnected ⊿ EM>10% condition, realize detecting iris condition of living organism in real time.

Fig. 9 is the schematic diagram that the present invention defines the eyelid movement characteristic degree of the generation of eyeball physiological movement.As shown in schematic diagram 9 indicates, in image, dotted line All_Iris represents the pixel quantity in iris entire area region, and solid line Visual_Iris represents the pixel quantity in iris useful area region.

The activity characteristic real-time detection method of eyeball physiological movement of the present invention, comprises the activity characteristic from axle stravismus of the generation detecting eyeball physiological movement in real time, comprises the following steps:

1. processor chips 109 control LED current driver 108 driving LED lighting source 106 (106RGB or 106IR) and produce the radiation of RGB-IR imaging wavelength in real time;

2. the real time imagery image Ieg of the RGB-IR wavelength channel output of processor chips 109 real-time image acquisition sensor 105 imaging array;

3. in the real-time calculation procedure 2 of processor chips the eyeball physiological movement of image Ieg generation from axle stravismus characteristic level data EG;

Wherein:

Being defined as from axle stravismus characteristic degree EG of the generation of eyeball physiological movement:

EG＝S_Iris/L_Iris*100％；

S_Iris is from the iris minor axis length in pixels that axle stravismus is formed in image Ieg;

L_Iris is from the iris major axis length in pixels that axle stravismus is formed in image Ieg;

4. calculate the activity change Shuai Zhi ⊿ EG from axle stravismus characteristic degree EG in the generation of eyeball physiological movement in real time;

5. according to the activity change rate preset value from axle stravismus characteristic degree of the generation of eyeball physiological movement, with the activity change rate value ⊿ EG from axle stravismus characteristic level data EG of the generation of the eyeball physiological movement calculated in step 4; sentence disconnected ⊿ EG>10% condition, realize detecting iris condition of living organism.

Figure 10 is the schematic diagram from axle stravismus physiological movement activity characteristic degree of the generation of this definition eyeball physiological movement.Shown in as illustrated, Figure 10 indicates, in image, S_Iris represents iris minor axis length in pixels, and L_Iris represents iris major axis length in pixels.

The specific embodiment content that the present invention describes and technical characteristic, can be implemented in the scope of identical or equivalent understanding, as imaging wavelength range change, imageing sensor changes, LED illumination light source changes, and optical filter changes, and optical imaging lens changes, light chopper, device substitutes also should by equivalent understanding.

Finally, it is also to be noted that what enumerate above is only several specific embodiments of the present invention.Obviously, the invention is not restricted to above embodiment, many distortion can also be had.All distortion that those of ordinary skill in the art can directly derive from content disclosed by the invention or associate, all should think protection scope of the present invention.

Claims (14)

1. the preposition and face/iris recognition integrated optical Electrical imaging method of mobile terminal, is characterized in that, comprise the following steps:

1. imaging wavelength is produced continuously or the radiation of synchronizing pulse pattern;

2. filter and physics Refractive focusing through imaging wavelength, the imaging array of imageing sensor receives imaging wavelength passage and carries out overall frame pattern or the reading of rolling row mode reset anomalous integral;

3. the original RAW pixel data of image that in imaging array, identical imaging wavelength passage exports is obtained;

4. according to the original RAW pixel data of image and pixel cell opto-electronic conversion relation, drive imageing sensor and LED illumination light source and optical imaging lens to focus on, realize FEEDBACK CONTROL;

5. output image.

2. photoelectronic imaging method as claimed in claim 1, wherein after described step is 4., also comprise step: processor chips respectively to imaging array in identical wavelength channel original RAW data pixels between carry out interpolated reconstruction, then export the image after interpolated reconstruction by processor chips.

3. photoelectronic imaging method as claimed in claim 1, wherein said FEEDBACK CONTROL be selected from following in one or more: the reset integral time of FEEDBACK CONTROL imageing sensor, Digital and analog gain is arranged, the radiation intensity of FEEDBACK CONTROL LED current driver drives LED illumination light source, angle of radiation position, and radiated time.

4. photoelectronic imaging method as claimed in claim 1, wherein based on the original RAW pixel data of described image, the optical black level performing imageing sensor corrects BLC, automatic exposure FEEDBACK CONTROL AEC, automatic gain FEEDBACK CONTROL AGC.

5. photoelectronic imaging method as claimed in claim 1, wherein said processor chips according to current environmental light brightness, control the radiation intensity of LED current driver drives LED illumination light source by configuration light sensor.

6. photoelectronic imaging method as claimed in claim 1 or 2, wherein said imaging wavelength is RGB imaging wavelength, the imaging array individual reception RGB imaging wavelength of described imageing sensor, described original RAW pixel data is I{YR, YG, YB}, each pixel of the image after interpolated reconstruction comprises rgb pixel value respectively.

7. photoelectronic imaging method as claimed in claim 6, the numerical value YR of the pixel cell opto-electronic conversion of the R wavelength channel of the imaging array individual reception of wherein said imageing sensor is:

YR＝FF*QR*GAIN*EXP*ADCG*E*PSU

The numerical value YG of the pixel cell opto-electronic conversion of the G wavelength channel of individual reception is:

YG＝FF*QG*GAIN*EXP*ADCG*E*PSU

The numerical value YB of the pixel cell opto-electronic conversion of the B wavelength channel of individual reception is:

YB＝FF*QB*GAIN*EXP*ADCG*E*PSU

Wherein said FF is lenticular fill factor, curve factor, QR, QG, QB is each imaging pixel cell photoelectricity quantum conversion constant of individual reception RGB wavelength channel in imageing sensor imaging array, EXP is reset integral time or the time shutter of imageing sensor imaging array, EXP synchronously equals the radiated time of LED illumination light source, GAIN is the Digital and analog gain of imageing sensor imaging array, ADCG is the ADC voltage analog-digital conversion quantization resolution of imageing sensor imaging array, E is radiance or the radiant illumination of the reception of imageing sensor imaging array, PSU is the physical size area of each photodiode imaging pixel cell of imageing sensor imaging array.

8. photoelectronic imaging method as claimed in claim 6, wherein said imaging len focuses on by calculating image original RAW pixel data I{YR, the focus mass value FEEDBACK CONTROL of YG, YB} realizes photo electric imaging system focusing task object distance WD at least 30cm-100cm.

9. photoelectronic imaging method as claimed in claim 1 or 2, wherein said imaging wavelength is IR imaging wavelength, and described original RAW pixel data is I{YIR}.

10. photoelectronic imaging method as claimed in claim 9, the numerical value YIR of the pixel cell opto-electronic conversion of the IR wavelength channel of the imaging array individual reception of wherein said imageing sensor is:

YIR＝FF*QIR*GAIN*EXP*ADCG*E*PSU

Wherein said FF is lenticular fill factor, curve factor, QIR is each imaging pixel cell photoelectricity quantum conversion constant of individual reception IR wavelength channel in imageing sensor imaging array, EXP is reset integral time or the time shutter of imageing sensor imaging array, EXP synchronously equals the radiated time of LED illumination light source, GAIN is the Digital and analog gain of imageing sensor imaging array, ADCG is the ADC voltage analog-digital conversion quantization resolution of imageing sensor imaging array, E is radiance or the radiant illumination of the reception of imageing sensor imaging array, PSU is the physical size area of each photodiode imaging pixel cell of imageing sensor imaging array.

11. photoelectronic imaging methods as claimed in claim 1, the focus mass value FEEDBACK CONTROL that wherein said imaging len focuses on by calculating the original RAW pixel data of image realizes photo electric imaging system focusing task object distance WD at least 10cm-30cm.

12. photoelectronic imaging methods as claimed in claim 1, wherein said method is applied to face and/or iris recognition.

13. photoelectronic imaging methods as claimed in claim 2, wherein interpolation algorithm is selected from least one as follows: the most contiguous interpolation Nearest-neighborinterpolation, linear interpolation Linearinterpolation, bilinear interpolation bilinearinterpolation, bicubic interpolation bicubicinterpolation, spline interpolation Splineinterpolation.

14. carry out a method for interpolated reconstruction between the original RAW data pixels realizing identical wavelength channel according to claim 2, it is characterized in that, comprise the following steps:

I, sample the pixel value of the image original RAW interpolation pixel data 4 direction transpostion interval that identical wavelength channel exports, be respectively:

The identical wavelength channel pixel Pixel_SC in current direction, the pixel Pixel_SH of the identical wavelength channel of horizontal direction, the pixel Pixel_SV of the identical wavelength channel of vertical direction, to the pixel Pixel_SD of the identical wavelength channel of angular direction;

II, interpolation pixel data 4 direction neighborhood pixels interpolation are calculated, Pixel_C, Pixel_H, Pixel_V, Pixel_D:

The pixel Pixel_C=Pixel_SC in current direction;

The neighborhood pixels interpolation Pixel_H=(Pixel_SH+Pixel_SC)/2 of horizontal direction;

The neighborhood pixels interpolation Pixel_V=(Pixel_SV+Pixel_SC)/2 of vertical direction;

To the neighborhood pixels interpolation Pixel_D=(Pixel_SH+Pixel_SV+Pixel_SD+Pixel_SC)/4 of angular direction;

III, circulate I-II step, and traversal calculates original RAW interpolation pixel datas all in image, forms finally complete interpolated image data.