CN103136421B - For the system-level photoelectric optimum design method of iris imaging device - Google Patents
For the system-level photoelectric optimum design method of iris imaging device Download PDFInfo
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- CN103136421B CN103136421B CN201310042686.6A CN201310042686A CN103136421B CN 103136421 B CN103136421 B CN 103136421B CN 201310042686 A CN201310042686 A CN 201310042686A CN 103136421 B CN103136421 B CN 103136421B
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- 238000003384 imaging method Methods 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000013461 design Methods 0.000 title claims abstract description 46
- 230000003287 optical effect Effects 0.000 claims abstract description 94
- 238000005286 illumination Methods 0.000 claims abstract description 79
- 239000000126 substance Substances 0.000 claims abstract description 18
- 230000003044 adaptive effect Effects 0.000 claims abstract description 17
- 238000012937 correction Methods 0.000 claims abstract description 15
- 238000012545 processing Methods 0.000 claims abstract description 11
- 230000005540 biological transmission Effects 0.000 claims description 18
- 238000001228 spectrum Methods 0.000 claims description 16
- 210000001747 pupil Anatomy 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 10
- 230000005622 photoelectricity Effects 0.000 claims description 9
- 238000012423 maintenance Methods 0.000 claims description 6
- 230000001143 conditioned effect Effects 0.000 claims description 4
- 230000010354 integration Effects 0.000 claims description 4
- 238000010606 normalization Methods 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 claims description 4
- 210000000554 iris Anatomy 0.000 description 134
- 210000003786 sclera Anatomy 0.000 description 10
- 238000003333 near-infrared imaging Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 3
- 230000004313 glare Effects 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
Abstract
The invention discloses a kind of system-level photoelectric optimum design method for iris imaging device, at given working substance apart under the condition of WOD, system-level optimal design comprises optical imagery object lens, near infrared light optical light filter and near infrared illumination source, 1), define system level photoelectric parameter image imaging sensor and system-level photoelectric signal produce and disposal route, comprise the following steps successively:; 2) the system-level photoelectric signal, defining original unit picture element brightness value produces; 3) iris region pixel intensity statistical estimation value, is defined; 4), Photoelectric Signal Processing control, realize iris region pixel intensity statistical estimation value preset brightness range; 5), pixel brightness value carries out original signal GAMMA correction process; 6), based on iris region pixel intensity statistical estimation value the adaptive control process of pixel brightness value contrast and export.The iris imaging apparatus design of the method energy completion system level, is embodied as image height quality iris image.
Description
Technical field
The present invention relates to a kind of system-level photoelectric optimum design method for iris imaging device, belong to photoelectric field.
Background technology
So far, all open source literatures for iris imaging device and patent retrieval display, be all roughly the structure describing iris imaging device, the contents such as parts and optics electricity component composing method.
The present inventor be found to so far without any one in actual applications under given demand condition, for the system-level method instructing iris imaging device photoelectricity optimal design, particularly how to obtain iris and sclera on the other hand, iris and pupil, the high-quality iris image of iris texture three high-contrast all needs a kind of system-level photoelectric optimum design method.
Summary of the invention
The technical problem to be solved in the present invention is under objective given demand condition, and provide a kind of for the system-level method instructing iris imaging device photoelectricity optimal design, the iris imaging apparatus design of completion system level, is embodied as image height quality iris image.
In order to solve the problems of the technologies described above, the invention provides a kind of system-level photoelectric optimum design method for iris imaging device, according under the condition of given working substance distance WOD, system-level optimal design comprises optical imagery object lens, near infrared light optical light filter and near infrared illumination source, the system-level photoelectric signal of image imaging sensor and optimization produces and disposal route, and the feature described in it is:
1. define system level photoelectric parameter λ, FWHM, I, E, EFL, F, FOV, OE_TE, ADC_T, GAIN, SNR, ET
The transmittance peak wavelength of near infrared light optical light filter is set near infrared illumination source equivalent peak wavelength X,
Half maximal value all-wave FWHM of near infrared light optical light filter is more than or equal to the spectrum FWHM of near infrared illumination source generation,
Wherein said equivalent peak wavelength X=∑ h
iλ
i,∑ h
i=1
<1>,
H
ifor the radiation intensity normalization coefficient of near infrared illumination source spectrum
;λ
ifor near infrared illumination source spectrum, wavelength coverage 750nm-880nm;
Further, during image imaging sensor employing monochrome type, equivalent peak wavelength X is chosen as two waveband or single band, it is 780nm that described two waveband comprises 750-810nm(representative value further) and 810-880nm(representative value be 850nm) two wave bands, FWHM>30nm, it is 810nm that described single band comprises 780-850nm(representative value), FWHM>30nm;
During image imaging sensor employing color-type, equivalent peak wavelength X is chosen as single band, and described single band is 810-880nm(representative value is 850nm), FWHM>30nm;
The radiation intensity I(mW/sr of near infrared illumination source, the every sterad of milliwatt):
I=E*WOD
2E<10mW/cm
2 <2>
Wherein:
e is greatest irradiation rate or the radiant illumination of the near infrared illumination source accepted at given working substance distance WOD place;
The equivalent focal length value EFL of optical imagery object lens has:
EFL=WOD*β/(1+β) <3>
Wherein: WOD is given working substance distance;
β is iris image space and object space resolution ratio
β=SOP*POI/SOI <4>
Wherein said
SOP(size of pixel) be the physical size of image imaging sensor unit picture element;
POI is the default iris diameter pixel dimension in image space resolution,
SOI is the default iris mean diameter physical size in object space resolution;
The aperture F value (or opposing optical aperture is reciprocal) of optical imagery object lens has:
F=EFL/D<5>
0.5*SOP/(1.22*λ)≤F≤2.0*SOP/(1.22*λ) <6>
Wherein said D is the pupil of optical imagery object lens or the diameter of clear aperature;
The field angle FOV of optical imagery object lens has:
FOV≥2*arctan(（DOI*SOP)/(2*EFL)) <7>
Wherein said DOI is the diagonal pixels quantity of image imaging sensor;
Image imaging sensor has photoelectricity conversion quantum efficiency OE_TE>1V/ (mW/cm
2* s)
Image imaging sensor has the conversion resolution ADC_T=2 of analog to digital converter ADC
nlSB/V, LSB are ADC resolution least significant bit (LSB), and N is ADC resolution number of significant digit, N>=8;
Image imaging sensor has when analog gain GAIN=1.0, signal to noise ratio snr >38db;
The system-level photoelectric signal optimized produces and disposal route comprises:
2. the system-level photoelectric signal of the unit picture element brightness value Yraw that definition is original produces
Yraw=ET * GAIN * E * OE_TE * ADC_T<8>
Wherein said ET be image imaging sensor time shutter exposure time or integral time integration time, ensure control ET<1/30 second;
Wherein said GAIN is the analog gain of image imaging sensor, and analog gain GAIN controls the signal to noise ratio snr >36db that must ensure to produce;
Wherein said E is greatest irradiation rate or the radiant illumination of the near infrared illumination source intensity I control accepted at given working substance distance WOD place defined in formula <2>, ensures control E<10mW/cm
2;
3. define iris region pixel intensity statistical estimation value Ysp
Ysp=S(Yraw)
Wherein said S is iris region pixel intensity statistical estimation function, the method that described pixel intensity statistical estimation function adopts comprises: pixel intensity statistics with histogram, and pixel intensity frequency spectrum is added up, pixel intensity mean value, pixel intensity weighted mean value, pixel intensity intermediate value etc.;
4.ET, GAIN, E Photoelectric Signal Processing controls, and realizes [Yll, Yhl] brightness range that iris region pixel intensity statistical estimation value Ysp is presetting
Yll≤Ysp≤Yhl
Wherein said Yll is iris region pixel intensity lower limit, and Yhl is the iris region pixel intensity upper limit;
Described Photoelectric Signal Processing controls as the linear product control planning of formula <8> according to definition in step 2, change ET, GAIN, E photosignal realizes original unit picture element brightness value Yraw and changes, and makes corresponding iris region pixel intensity statistical estimation value Ysp meet the pre-conditioned of Yll≤Ysp≤Yhl;
Further, ET, GAIN, E can fix wherein 1 controlled condition, adjust other 2 controlled conditions, maybe can fix wherein 2 controlled conditions, adjust other 1 controlled condition;
5. pixel brightness value Yraw carries out original signal GAMMA correction process, keeps original value, namely keeps GAMMA=1.0 linear relationship
Ygamma=GAMMA（Yraw）=Yraw
GAMMA=1.0=Yraw ；
6. based on iris region pixel intensity statistical estimation value Ysp the adaptive control process of pixel brightness value Yraw contrast and export Yout
Yout=Contrast*(Yraw-Ysp)+Ysp
1.0≤Contrast≤2.0
Yout=2
N-1 if Yout>2
N-1；
Yout=0 if Yout<0；
Wherein said Contrast is the contrast adaptive control coefficient based on iris region pixel intensity statistical estimation value Ysp, and N is ADC resolution number of significant digit.
Sum up foregoing description, of the present inventionly achieve in actual applications under objective given demand condition, for the system-level method instructing iris imaging device photoelectricity optimal design, the optimal design of simultaneity factor level ensures that iris imaging device obtains iris and sclera, iris and pupil, the high-quality iris image of iris texture three high-contrast.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Fig. 1 is the step of iris imaging apparatus system level photoelectric optimum design method of the present invention;
Fig. 2 is the composition structural map of the specific embodiment of the invention 1 iris imaging device;
Fig. 3 is the composition structural map of the specific embodiment of the invention 2 iris imaging device;
Fig. 4 is optical imagery object lens (ZEMAX) the topological design figure of the specific embodiment of the invention 1 iris imaging device;
Fig. 5 is optical imagery object lens (ZEMAX) the field luminance design drawing relatively of the specific embodiment of the invention 1 iris imaging device;
Fig. 6 is optical imagery object lens (ZEMAX) the visual field diffraction MTF design drawing of the specific embodiment of the invention 1 iris imaging device;
Fig. 7 is optical imagery object lens (ZEMAX) curvature of field and the distortion design drawing of the specific embodiment of the invention 1 iris imaging device;
Fig. 8 is that diffusion design figure put by the optical imagery object lens (ZEMAX) of the specific embodiment of the invention 1 iris imaging device;
Fig. 9 is through the image of original signal GAMMA=0.45 correction process;
Figure 10 is through the image of original signal GAMMA=1.0 correction process;
Figure 11 is the image without the process of contrast adaptive control;
Figure 12 is through the image of Contrast=1.25 contrast adaptive control process.
Embodiment
Embodiment 1,
Fig. 2 describes the composition structural map of the iris imaging device in specific embodiment 1, comprises and forming with lower component:
Iris imaging device 1; left eye 2L; left eye virtual image 2L'; right eye 2R; right eye virtual image 2R'; LED 3L on the left of near infrared illumination source; LED 3R on the right side of near infrared illumination source, transmission window 4L on the left of near infrared illumination source, transmission window 4R on the right side of near infrared illumination source; near infrared light optical light filter protecting window 5; near infrared light optical light filter 6, optical imagery object lens 7, image imaging sensor 8; the rear burnt near infrared light optical light filter 9 of installation can be matched, for focusing driver 10 burnt after the optical imagery object lens of automatic focus AF.
The near infrared light optical light filter protecting window 5 of iris imaging device 1 is positioned at the most front outside surface of iris imaging device 1 for the protection of whole iris imaging device, ensures to use under various different operating environment.
LED 3L on the left of the near infrared illumination source of iris imaging device 1, on the right side of near infrared illumination source, LED 3R lays respectively at the left and right sides of iris imaging device 1, its outside is respectively by transmission window 4L on the left of near infrared illumination source, and on the right side of near infrared illumination source, transmission window 4R covers and disperses (radiation) angle for what control near infrared illumination source.
The near infrared light optical light filter 6 of iris imaging device 1, optical imagery object lens 7, image imaging sensor 8, same optic axis center is installed successively, for the formation of basic near infrared imaging light path.
Near infrared light optical light filter 6 is for the visible ray formation left eye virtual image 2L' of reflection from left eye 2L in external environment condition, right eye 2R, right eye virtual image 2R'; Transmission is from LED3L on the left of near infrared illumination source, and on the right side of near infrared illumination source, LED 3R is reflected in left eye 2L, and the near infrared light of right eye 2R forms effective near infrared imaging light.
Near infrared light optical light filter 6, effect one be filtering interfering imaging invalid veiling glare so that only the effective near infrared light of transmission improve image quality, effect two is the left eye virtual image 2L' by being formed, and right eye virtual image 2R' realizes user and independently locates in the optic axis center of iris imaging device 1.
Optical imagery object lens 7 converge the image space focal plane of optical focus to image imaging sensor 8 for forming physics refraction to effective near infrared imaging light.
The rear burnt near infrared light optical light filter 9 of installation can be matched, the light path center between optical imagery object lens 7 and image imaging sensor 8, for the invalid veiling glare of further filtering interfering imaging, improve the near infrared light purity being used for imaging object.
For focusing driver 10 burnt after the optical imagery object lens of automatic focus AF, the light path center between near infrared light optical light filter 6 and image imaging sensor 8, and integrated airtight with optical imagery object lens 7.Realize by the rear burnt position between control both optical image-forming objective lens 7 and image imaging sensor 8 the automatic focus AF that image space focal plane position adjusts for focusing driver 10 burnt after the optical imagery object lens of automatic focus AF.Can by step micro motor for focusing driver 10 burnt after the optical imagery object lens of automatic focus AF, voice coil motor or other linear course adjustment control are formed.
First according to the demand analysis of specific embodiment 1, optical imagery object lens 7 and image imaging sensor 8 energy imaging left eye 2L and right eye 2R simultaneously, 5,000,000 pixels (5Mpixels) resolution must be adopted, the physical size representative value of image imaging sensor 8 unit picture element of 5,000,000 pixels (5Mpixels) resolution so is as 2.2um, 2560*1944 pixel, but in view of the physical size of the so little unit picture element of current technology makes its photoelectricity conversion quantum efficiency OE_TE and SNR relatively low, also namely mean that needs increase logical light quantity, consider the small-size object of this type of imaging iris, further impact is that rear Jiao's adjustment is very responsive apart from WOD change to there being working substance, therefore after specific embodiment 1 devises optical imagery object lens, burnt focusing driver 10 is for performing automatic focus AF.
Next, in actual applications under objective given demand condition, iris imaging device 1 according at given working substance apart from WOD as 30cm(working object distance) condition under, specific embodiment 1 describes how to carry out system-level photoelectric optimal design in detail.
1), define system level photoelectric parameter λ, FWHM, I, EFL, F, FOV, OE_TE, ADC_T, GAIN, SNR, ET:
The transmittance peak wavelength of near infrared light optical light filter 6 to be set on the right side of LED3L on the left of near infrared illumination source, near infrared illumination source LED 3R(hereinafter referred to as near infrared illumination source 3L, 3R) equivalent peak wavelength X;
Half maximal value all-wave FWHM(Full Wave at Half Maximum of near infrared light optical light filter 6) be more than or equal near infrared illumination source 3L, the spectrum FWHM that 3R produces,
Wherein said equivalent peak wavelength X=∑ h
iλ
i,∑ h
i=1 <1>
h
ifor the radiation intensity normalization coefficient of near infrared illumination source spectrum, λ
ifor near infrared illumination source spectrum, wavelength coverage 750nm-880nm;
Remarks illustrate: near infrared illumination source spectrum is exactly the wavelength coverage of near infrared illumination source 3L, 3R;
Further, when image imaging sensor 8 adopts monochrome type, equivalent peak wavelength X is chosen as two waveband or single band, it is 780nm that described two waveband comprises 750-810nm(representative value further) and 810-880nm(representative value be 850nm) two wave bands, FWHM>30nm, it is 810nm that described single band comprises 780-850nm(representative value), FWHM>30nm;
When image imaging sensor 8 adopts color-type, equivalent peak wavelength X is chosen as single band, and described single band is 810-880nm(representative value is 850nm), FWHM>30nm;
Specific embodiment 1 image imaging sensor 8 adopts monochrome type, and two waveband comprises 780nm, 850nm, FWHM=60nm,
Equivalent peak wavelength X=810nm, FWHM=120nm.
The radiation intensity I(mW/sr of specific embodiment 1 near infrared illumination source, the every sterad of milliwatt):
I=E*WOD
2E<10mW/cm
2 <2>
Wherein:
e is greatest irradiation rate or the radiant illumination of the near infrared illumination source accepted at given working substance distance WOD place;
(remarks illustrate: as long as E value meets E<10mW/cm
2, and then calculate according to <2> and given WOD and obtain);
The equivalent focal length value EFL(Equivalent focallength of specific embodiment 1 optical imagery object lens 7) have:
EFL=WOD*β/(1+β) <3>
Wherein: WOD is given working substance distance;
β is iris image space and object space resolution ratio
β=SOP*POI/SOI <4>
Wherein said
SOP(size of pixel) be the physical size of image imaging sensor 8 unit picture element;
POI is the default iris diameter pixel dimension in image space resolution, and a nearlyer step POI scope is 160-320pixels;
SOI is the default iris mean diameter physical size in object space resolution, and a nearlyer step SOI scope is 9-13mm;
Specific embodiment 1, SOP=2.2um/pixel, POI=220pixels, SOI=11mm,
β=0.044,EFL=12.6mm。
The aperture F value (or opposing optical aperture is reciprocal) of specific embodiment 1 optical imagery object lens 7 has:
F=EFL/D<5>
0.5*SOP/(1.22*λ)≤F≤2.0*SOP/(1.22*λ) <6>
Wherein said D is the pupil of optical imagery object lens 7 or the diameter of clear aperature;
Specific embodiment 1 is selected close to lower limit f-number F=1.4, D=9mm, and the logical light quantity of so design can ensure image imaging sensor 8 image quality.
The field angle FOV(Field of View of specific embodiment 1 optical imagery object lens 7) have:
FOV≥2*arctan(（DOI*SOP)/(2*EFL)) <7>
Wherein said DOI is the diagonal pixels quantity of image imaging sensor 8;
Specific embodiment 1, DOI=3227pixels, FOV >=32 degree (3.55mm half diagonal angle).
λ, EFL, F, FOV like this require the optical imagery object lens 7 of design, specific embodiment 1 is specifically shown in Fig. 4 ~ Fig. 8 by the design of ZEMAX optical simulation software, comprises topological design figure, relative field luminance design drawing, visual field diffraction MTF design drawing, the curvature of field and distortion design drawing, some diffusion design figure.
Remarks illustrate: according to λ, EFL, F, FOV requires the optical imagery object lens 7 of design, can obtain Fig. 4 ~ Fig. 8 with " ZEMAX design " (a kind of optical simulation software), the object of respective design figure is the design of checking above-mentioned parameter, and the design that can obtain parameter is feasible concluding content.
Specific embodiment 1 image imaging sensor 8 has photoelectricity conversion quantum efficiency OE_TE=1.4V/ (mW/cm
2* s),
Specific embodiment 1 image imaging sensor 8 has ADC conversion resolution ADC_T=2
10lSB/V, LSB are ADC resolution least significant bit (LSB), and now, N=10, N are ADC resolution number of significant digit;
Specific embodiment 1 image imaging sensor 8 has when analog gain GAIN=1.0, signal to noise ratio snr >38db.
Then the system-level photoelectric signal that specific embodiment 1 is optimized produces and disposal route comprises following content:
2) the system-level photoelectric signal, defining original unit picture element brightness value Yraw produces
Yraw=ET * GAIN * E * OE_TE * ADC_T<8>
Wherein said ET be image imaging sensor 8 time shutter exposure time or integral time integration time, ensure control ET<1/60 second;
Wherein said GAIN is the analog gain of image imaging sensor 8, and analog gain GAIN controls the signal to noise ratio snr >36db that must ensure to produce;
Wherein said E is greatest irradiation rate or the radiant illumination of the near infrared illumination source intensity I control accepted at given working substance distance WOD place defined in formula <2>, ensures control E<10mW/cm
2.
3) iris region pixel intensity statistical estimation value Ysp, is defined:
Ysp=S(Yraw)
Wherein said S is iris region pixel intensity statistical estimation function, the method that described pixel intensity statistical estimation function adopts comprises: pixel intensity statistics with histogram, and pixel intensity frequency spectrum is added up, pixel intensity mean value, pixel intensity weighted mean value, pixel intensity intermediate value etc.
4), ET, GAIN, E Photoelectric Signal Processing control, realize iris region pixel intensity statistical estimation value Ysp preset [Yll, Yhl] brightness range:
Yll≤Ysp≤Yhl
Wherein said Yll is iris region pixel intensity lower limit, and Yhl is the iris region pixel intensity upper limit;
Remarks illustrate: Yll, Yhl can arrange the upper limit arbitrarily according to actual needs, lower limit.Representative value is:
Yll=2
9LSB-2
4 LSB
=
496LSB Yhl =2
9 LSB +2
4LSB=528LSB。
Described Photoelectric Signal Processing controls to be according to step 2) the middle linear product control planning of formula <8> defined, change ET, GAIN, E photosignal realizes original unit picture element brightness value Yraw and changes, and makes corresponding iris region pixel intensity statistical estimation value Ysp meet the pre-conditioned of Yll≤Ysp≤Yhl;
In theory, during Yll=Yhl condition, Ysp can obtain constant iris region pixel intensity, but consider as external complex image-forming condition during practical application, image imaging sensor inconsistency, near infrared illumination source changes by the condition such as temperature and electric current, easily produces feedback oscillation.Therefore it is rational for setting bound.
Further control to accelerate and simplifying Photoelectric Signal Processing, specific embodiment 1, ET, GAIN, E can fix wherein 1 controlled condition, adjusts other 2 controlled conditions, maybe can fix wherein 2 controlled conditions, adjusts other 1 controlled condition.
5), pixel brightness value Yraw carries out original signal GAMMA correction process, maintenance original value, i.e. maintenance GAMMA=1.0 linear relationship:
Ygamma=GAMMA（Yraw）=Yraw
GAMMA=1.0=Yraw
Specific embodiment 1 has to pass through above-mentioned original signal GAMMA=1.0 correction process, reason all gives tacit consent in inside before current image imaging sensor exports to have carried out the correction process of GAMMA=0.45 to original signal, the present invention studies by experiment and thinks that design GAMMA=1.0 linear relationship more can ensure iris and sclera, iris and pupil, iris texture three has high-contrast and is conducive to carrying out further the Luminance Distribution of iris recognition.
At identical conditions, Fig. 9 is through the image of original signal GAMMA=0.45 correction process, Figure 10 is through the image of original signal GAMMA=1.0 correction process, by comparing iris and sclera, iris and pupil, iris texture three contrast confirms that the image of GAMMA=1.0 correction process is obviously better than the image of GAMMA=0.45 correction process, and Luminance Distribution scope is wider namely has larger variation range.
6), based on iris region pixel intensity statistical estimation value Ysp the adaptive control process of pixel brightness value Yraw contrast and export Yout
Yout=Contrast*(Yraw-Ysp)+Ysp
1.0≤Contrast≤2.0
Yout=2
10-1 if Yout>2
10-1；
Yout=0 if Yout<0；
Wherein said Contrast is the contrast adaptive control coefficient based on iris region pixel intensity statistical estimation value Ysp.
The benchmark that employing spends adaptive control as a comparison based on iris region pixel intensity statistical estimation value Ysp can improve guarantee iris and sclera the most in essence, iris and pupil, iris texture three has high-contrast and is conducive to optimizing further the Luminance Distribution of iris recognition.
Specific embodiment 1, Contrast=1.25, the final exportable iris of Yout and sclera after above-mentioned signal transacting, iris and pupil, the high-quality iris image of iris texture three high-contrast.
At identical conditions, Figure 11 is the image without the process of contrast adaptive control, Figure 12 is through the image of Contrast=1.25 contrast adaptive control process, by comparing iris and sclera, iris and pupil, iris texture three contrast confirms the image being obviously better than without the process of contrast adaptive control through the image of Contrast=1.25 contrast adaptive control process.
Embodiment 2,
Fig. 3 describes the composition structural map of specific embodiment 2 iris imaging device, and it comprises and forming with lower component:
Iris imaging device 1; left eye 2L; left eye virtual image 2L'; right eye 2R; right eye virtual image 2R'; LED 3L on the left of near infrared illumination source; LED 3R on the right side of near infrared illumination source, transmission window 4L on the left of near infrared illumination source, transmission window 4R on the right side of near infrared illumination source; near infrared light optical light filter protecting window 5; near infrared light optical light filter 6, iris of left eye optical imagery object lens 7L, iris of right eye optical imagery object lens 7R; iris of left eye image imaging sensor 8L, iris of right eye image imaging sensor 8R.
The near infrared light optical light filter protecting window 5 of iris imaging device 1, is positioned at the most front outside surface of iris imaging device 1 for the protection of whole iris imaging device, ensures to use under various different operating environment.
LED 3L on the left of the near infrared illumination source of iris imaging device 1, on the right side of near infrared illumination source, LED 3R lays respectively at the left and right sides of iris imaging device 1, its outside is respectively by transmission window 4L on the left of near infrared illumination source, and on the right side of near infrared illumination source, transmission window 4R covers and disperses (radiation) angle for what control near infrared illumination source.
The near infrared light optical light filter 6 of iris imaging device 1, iris of left eye optical imagery object lens 7L, iris of left eye image imaging sensor 8L, same optic axis center is installed successively, for the formation of basic iris of left eye near infrared imaging light path.
The near infrared light optical light filter 6 of iris imaging device 1, iris of right eye optical imagery object lens 7R, iris of right eye image imaging sensor 8R, same optic axis center is installed successively, for the formation of basic iris of right eye near infrared imaging light path.
Near infrared light optical light filter 6 is for reflecting from left eye 2L in external environment condition, the visible ray of right eye 2R forms left eye virtual image 2L', right eye virtual image 2R', transmission is from LED3L on the left of near infrared illumination source, on the right side of near infrared illumination source, LED 3R is reflected in left eye 2L, and the near infrared light of right eye 2R forms effective near infrared imaging light.
Near infrared light optical light filter 6, effect one be filtering interfering imaging invalid veiling glare so that only the effective near infrared light of transmission improve image quality, effect two is the left eye virtual image 2L' by being formed, and right eye virtual image 2R' realizes user and independently locates in the optic axis center of iris imaging device 1.
Iris of left eye optical imagery object lens 7L is used for forming physics refraction to effective near infrared imaging light and converges the image space focal plane of optical focus to iris of left eye image imaging sensor 8L.
Iris of right eye optical imagery object lens 7R is used for forming physics refraction to effective near infrared imaging light and converges the image space focal plane of optical focus to iris of right eye image imaging sensor 8R.
First the demand analysis of specific embodiment 1 is different from, in specific embodiment 2, iris of left eye optical imagery object lens 7L and iris of left eye image imaging sensor 8L energy imaging left eye 2L, iris of right eye optical imagery object lens 7R and iris of right eye image imaging sensor 8R and right eye 2R, owing to adopting 2 road imaging optical path designs, image imaging sensor 8L, 8R is chosen as 0.3Mpixels 640*480 pixel, 1Mpixels 1280*800 pixel, 1.2Mpixels 1280*960 pixel, 1.3Mpixels 1280*1024 pixel resolution, as specific embodiment 2 adopts the physical size representative value of the image imaging sensor unit picture element of 0.3Mpixels 640*480 pixel resolution to be as 6um, OE_TE with SNR is relative very high for its photoelectricity conversion quantum efficiency of the physical size of current technology 6um unit picture element, therefore the optical imagery objective lens design of rear Jiao is fixed in the employing of specific embodiment 2.
Next, in actual applications under objective given demand condition, iris imaging device according at given working substance apart from WOD as 20cm(working object distance) condition under, specific embodiment 2 describes how to carry out system-level photoelectric optimal design in detail.
1), define system level photoelectric parameter λ, FWHM, I, EFL, F, FOV, OE_TE, ADC_T, GAIN, SNR, ET
The transmittance peak wavelength of near infrared light optical light filter 6 is set near infrared illumination source 3L, 3R equivalent peak wavelength X,
Half maximal value all-wave FWHM(Full Wave at Half Maximum of near infrared light optical light filter 6) be more than or equal near infrared illumination source 3L, the spectrum FWHM that 3R produces,
Wherein said equivalent peak wavelength X=∑ h
iλ
i,∑ h
i=1
<1>
h
ifor the radiation intensity normalization coefficient of near infrared illumination source spectrum; λ
ifor near infrared illumination source spectrum, wavelength coverage 750nm-880nm;
Image imaging sensor 8 adopts color-type, single band 850nm, FWHM=60nm,
Equivalent peak wavelength X=850nm, FWHM=60nm.
The radiation intensity I(mW/sr of near infrared illumination source, the every sterad of milliwatt):
I=E*WOD
2E<10mW/cm
2 <2>
Wherein:
e is greatest irradiation rate or the radiant illumination of the near infrared illumination source accepted at given working substance distance WOD place;
The equivalent focal length value EFL(Equivalent focallength of specific embodiment 2 optical imagery object lens 7) have:
EFL=WOD*β/(1+β) <3>
Wherein: WOD is given working substance distance;
β is iris image space and object space resolution ratio
β=SOP*POI/SOI <4>
Wherein said
SOP(size of pixel) be the physical size of image imaging sensor unit picture element;
POI is the default iris diameter pixel dimension in image space resolution, and a nearlyer step POI scope is 160-320pixels;
SOI is the default iris mean diameter physical size in object space resolution, and a nearlyer step SOI scope is 9-13mm;
In specific embodiment 2, SOP=6um/pixel, POI=220pixels, SOI=11mm,
β=0.12,EFL=21.4mm。
The aperture F value (or opposing optical aperture is reciprocal) of optical imagery object lens 7 has:
F=EFL/D<5>
0.5*SOP/(1.22*λ)≤F≤2.0*SOP/(1.22*λ) <6>
Wherein said D is the pupil of optical imagery object lens or the diameter of clear aperature;
Select close to upper limit f-number F=10, D=2.14mm, the logical light quantity of so design can ensure image imaging sensor 8 image quality, again can extended depth of field.
The field angle FOV(Field of View of optical imagery object lens 7) have:
FOV≥2*arctan(（DOI*SOP)/(2*EFL)) <7>
Wherein said DOI is the diagonal pixels quantity of image imaging sensor;
DOI=800pixels, FOV >=13 degree (2.4mm half diagonal angle).
Image imaging sensor 8 has photoelectricity conversion quantum efficiency OE_TE=16V/ (mW/cm
2* s);
Image imaging sensor 8 has ADC conversion resolution ADC_T=2
12lSB/V, LSB are ADC resolution least significant bit (LSB), and N is ADC resolution number of significant digit, N=12;
Image imaging sensor 8 has when analog gain GAIN=1.0, signal to noise ratio snr >50db.
Then the system-level photoelectric signal that specific embodiment 2 is optimized produces and disposal route comprises:
2) the system-level photoelectric signal, defining original unit picture element brightness value Yraw produces
Yraw=ET * GAIN * E * OE_TE * ADC_T<8>
Wherein said ET be image imaging sensor time shutter exposure time or integral time integration time, ensure control ET<1/100 second;
Wherein said GAIN is the analog gain of image imaging sensor, and analog gain GAIN controls the signal to noise ratio snr >38db that must ensure to produce;
Wherein said E is greatest irradiation rate or the radiant illumination of the near infrared illumination source intensity I control accepted at given working substance distance WOD place defined in formula <2>, ensures control E<10mW/cm
2;
3) iris region pixel intensity statistical estimation value Ysp, is defined
Ysp=S(Yraw)
Wherein said S is iris region pixel intensity statistical estimation function, the method that described pixel intensity statistical estimation function adopts comprises: pixel intensity statistics with histogram, and pixel intensity frequency spectrum is added up, pixel intensity mean value, pixel intensity weighted mean value, pixel intensity intermediate value etc.;
4), ET, GAIN, E Photoelectric Signal Processing control, realize iris region pixel intensity statistical estimation value Ysp preset [Yll, Yhl] brightness range
Yll≤Ysp≤Yhl
Wherein said Yll is iris region pixel intensity lower limit, and Yhl is the iris region pixel intensity upper limit;
Described Photoelectric Signal Processing controls as the linear product control planning of formula <8> according to definition in step 2, change ET, GAIN, E photosignal realizes original unit picture element brightness value Yraw and changes, and makes corresponding iris region pixel intensity statistical estimation value Ysp meet the pre-conditioned of Yll≤Ysp≤Yhl;
In theory, during Yll=Yhl condition, Ysp can obtain constant iris region pixel intensity, but consider as external complex image-forming condition during practical application, image imaging sensor inconsistency, near infrared illumination source changes by the condition such as temperature and electric current, easily produces feedback oscillation.Therefore it is rational for setting bound.
Further control to accelerate and simplifying Photoelectric Signal Processing, in specific embodiment 2, ET, GAIN, E can fix wherein 1 controlled condition, adjust other 2 controlled conditions, maybe can fix wherein 2 controlled conditions, adjust other 1 controlled condition;
5), pixel brightness value Yraw carries out original signal GAMMA correction process, maintenance original value, i.e. maintenance GAMMA=1.0 linear relationship
Ygamma=GAMMA（Yraw）=Yraw
GAMMA=1.0=Yraw
Specific embodiment 2 has to pass through above-mentioned original signal GAMMA=1.0 correction process, reason all gives tacit consent in inside before current image imaging sensor exports to have carried out the correction process of GAMMA=0.45 to original signal, the present inventor studies by experiment and thinks that design GAMMA=1.0 linear relationship more can ensure iris and sclera, iris and pupil, iris texture three has high-contrast and is conducive to optimizing further the Luminance Distribution of iris recognition.
6), based on iris region pixel intensity statistical estimation value Ysp the adaptive control process of pixel brightness value Yraw contrast and export Yout
Yout=Contrast*(Yraw-Ysp)+Ysp
1.0≤Contrast≤2.0
Yout=2
12-1 if Yout>2
12-1；
Yout=0 if Yout<0；
Wherein said Contrast is the contrast adaptive control coefficient based on iris region pixel intensity statistical estimation value Ysp.
The benchmark that employing spends adaptive control as a comparison based on iris region pixel intensity statistical estimation value Ysp can improve guarantee iris and sclera the most in essence, iris and pupil, iris texture three has high-contrast and is conducive to optimizing further the Luminance Distribution of iris recognition.
Specific embodiment 2, Contrast=1.5, the final exportable iris of Yout and sclera after above-mentioned signal transacting, iris and pupil, the high-quality iris image of iris texture three high-contrast.
Finally, it is also to be noted that what enumerate above is only several specific embodiments of the present invention.Obviously, the invention is not restricted to above embodiment, many distortion can also be had.All distortion that those of ordinary skill in the art can directly derive from content disclosed by the invention or associate, all should think protection scope of the present invention.
Claims (5)
1., for the system-level photoelectric optimum design method of iris imaging device, at given working substance apart under the condition of WOD, described iris imaging device comprises optical imagery object lens, near infrared light optical light filter and near infrared illumination source, image imaging sensor; It is characterized in that the described system-level photoelectric optimum design method for iris imaging device comprises the following steps successively:
1), define system level photoelectric parameter λ, FWHM, I, E, EFL, F, FOV, OE_TE, ADC_T, GAIN, SNR, ET
The transmittance peak wavelength of near infrared light optical light filter is set near infrared illumination source equivalent peak wavelength X,
Half maximal value all-wave FWHM of near infrared light optical light filter is more than or equal to half maximal value all-wave FWHM of near infrared illumination source generation,
Wherein said equivalent peak wavelength X=∑ h
iλ
i, ∑ h
i=1<1>,
H
ifor the radiation intensity normalization coefficient of near infrared illumination source spectrum, λ
ifor near infrared illumination source spectrum, wavelength coverage 750nm-880nm;
The radiation intensity I (mW/sr, the every sterad of milliwatt) of near infrared illumination source:
I＝E*WOD
2E<10mW/cm
2<2>
Wherein said E is greatest irradiation rate or the radiant illumination of the near infrared illumination source accepted at given working substance distance WOD place;
The equivalent focal length value EFL of optical imagery object lens has:
EFL＝WOD*β/(1+β) <3>
Wherein: WOD is given working substance distance;
β is iris image space and object space resolution ratio
β＝SOP*POI/SOI <4>
Wherein said
SOP is the physical size of image imaging sensor unit picture element;
POI is the default iris diameter pixel dimension in image space resolution,
SOI is the default iris mean diameter physical size in object space resolution;
Aperture F value or the opposing optical aperture inverse of optical imagery object lens have:
F＝EFL/D <5>
0.5*SOP/(1.22*λ)≤F≤2.0*SOP/(1.22*λ) <6>
Wherein said D is the pupil of optical imagery object lens or the diameter of clear aperature;
The field angle FOV of optical imagery object lens has:
FOV≥2*arctan((DOI*SOP)/(2*EFL)) <7>
Wherein said DOI is the diagonal pixels quantity of image imaging sensor;
Image imaging sensor has photoelectricity conversion quantum efficiency OE_TE>1V/ (mW/cm
2* s);
Image imaging sensor has ADC conversion resolution ADC_T=2
nlSB/V, wherein said LSB are ADC resolution least significant bit (LSB), and N is ADC resolution number of significant digit, N>=8;
Image imaging sensor has when analog gain GAIN=1.0, signal to noise ratio snr >38db;
2) the system-level photoelectric signal, defining original unit picture element brightness value Yraw produces
Yraw＝ET*GAIN*E*OE_TE*ADC_T <8>
Wherein said ET be image imaging sensor time shutter exposure time or integral time integration time, control ET<1/30s second must be ensured;
Wherein said GAIN is the analog gain of image imaging sensor, and analog gain GAIN controls the signal to noise ratio snr >36db that must ensure to produce;
Wherein said E is greatest irradiation rate or the radiant illumination of the near infrared illumination source I control accepted at given working substance distance WOD place defined in formula <2>, must ensure control E<10mW/cm
2;
3) iris region pixel intensity statistical estimation value Ysp, is defined
Ysp＝S(Yraw)
Wherein said S is iris region pixel intensity statistical estimation function, the method that described pixel intensity statistical estimation function adopts comprises: pixel intensity statistics with histogram, and pixel intensity frequency spectrum is added up, pixel intensity mean value, pixel intensity weighted mean value, pixel intensity intermediate value;
4), ET, GAIN, E Photoelectric Signal Processing control, realize iris region pixel intensity statistical estimation value Ysp preset [Yll, Yhl] brightness range:
Yll≤Ysp≤Yhl
Wherein said Yll is iris region pixel intensity lower limit, and Yhl is the iris region pixel intensity upper limit;
Described Photoelectric Signal Processing controls as the linear product control planning of formula <8> according to definition in step 2, change ET, GAIN, E photosignal realizes original unit picture element brightness value Yraw and changes, and makes corresponding iris region pixel intensity statistical estimation value Ysp meet the pre-conditioned of Yll≤Ysp≤Yhl;
5), pixel brightness value Yraw carries out original signal GAMMA correction process, maintenance original value, i.e. maintenance GAMMA=1.0 linear relationship
Ygamma＝GAMMA(Yraw)＝Yraw
GAMMA＝1.0＝Yraw
6), based on iris region pixel intensity statistical estimation value Ysp the adaptive control process of pixel brightness value Yraw contrast and export Yout
Yout＝Contrast*(Yraw-Ysp)+Ysp
1.0≤Contrast≤2.0
Yout＝2
N-1 if Yout>2
N-1；
Yout＝0 if Yout<0；
Wherein said Contrast is the contrast adaptive control coefficient based on iris region pixel intensity statistical estimation value Ysp, and N is ADC resolution number of significant digit.
2., according to claim 1 for the system-level photoelectric optimum design method of iris imaging device, it is characterized in that:
During image imaging sensor employing monochrome type, equivalent peak wavelength X is chosen as two waveband or single band, described two waveband comprises 750-810nm and 810-880nm two wave bands, FWHM>30nm, described single band comprises 780-850nm, FWHM>30nm;
During image imaging sensor employing color-type, equivalent peak wavelength X is chosen as single band, and described single band is 810-880nm, FWHM>30nm.
3. realize a kind of iris imaging device that system-level photoelectric optimum design method according to claim 1 adopts; it is characterized in that: iris imaging device forms by with lower component: LED on the left of near infrared illumination source; LED on the right side of near infrared illumination source; transmission window on the left of near infrared illumination source; transmission window on the right side of near infrared illumination source, near infrared light optical light filter protecting window, near infrared light optical light filter; optical imagery object lens, image imaging sensor.
4. realize a kind of iris imaging device that system-level photoelectric optimum design method according to claim 1 adopts; it is characterized in that: iris imaging device forms by with lower component: LED on the left of near infrared illumination source; LED on the right side of near infrared illumination source; transmission window on the left of near infrared illumination source; transmission window on the right side of near infrared illumination source; near infrared light optical light filter protecting window; near infrared light optical light filter; optical imagery object lens; image imaging sensor; rear burnt near infrared light optical light filter, for focusing driver burnt after the optical imagery object lens of automatic focus AF.
5. realize a kind of iris imaging device that system-level photoelectric optimum design method according to claim 1 adopts; it is characterized in that: iris imaging device forms by with lower component: LED on the left of near infrared illumination source; LED on the right side of near infrared illumination source; transmission window on the left of near infrared illumination source; transmission window on the right side of near infrared illumination source; near infrared light optical light filter protecting window; near infrared light optical light filter; iris of left eye optical imagery object lens; iris of right eye optical imagery object lens; iris of left eye image imaging sensor, iris of right eye image imaging sensor.
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| CN103491312B (en) * | 2013-09-29 | 2016-06-15 | 武汉虹识技术有限公司 | A kind of automatic exposure control method for iris recognition and device |
| CN103593647A (en) | 2013-10-21 | 2014-02-19 | 王晓鹏 | Biological characteristic imaging method and equipment |
| CN103632135B (en) * | 2013-11-01 | 2016-09-28 | 武汉虹识技术有限公司 | A kind of iris image trap setting based on double image sensor |
| CN103605955A (en) * | 2013-11-01 | 2014-02-26 | 武汉虹识技术有限公司 | Image capturing apparatus based on single sensor and optical filtering |
| CN103839054B (en) * | 2014-03-14 | 2017-05-24 | 北京中科虹霸科技有限公司 | Multi-functional mobile intelligent terminal sensor supporting iris recognition |
| CN105678228B (en) * | 2014-04-04 | 2017-11-28 | 贵阳科安科技有限公司 | Iris recognition optical imagery module and application method for safety identification authentication |
| CN103870819B (en) * | 2014-04-04 | 2016-03-09 | 苏州思源科安信息技术有限公司 | The iris recognition optical imagery module of mobile terminal safety authentication and make usage |
| CN103945136B (en) * | 2014-04-04 | 2017-03-08 | 苏州思源科安信息技术有限公司 | The iris image photo electric imaging system of high user experience degree |
| CN104394311B (en) * | 2014-09-15 | 2015-08-05 | 贵阳科安科技有限公司 | For iris recognition imaging modules and the image acquiring method of mobile terminal |
| CN104252622A (en) * | 2014-10-15 | 2014-12-31 | 倪蔚民 | Mobile terminal front-mounting and iris identification integration photoelectric imaging system and method |
| CN105426848B (en) * | 2014-11-03 | 2020-12-18 | 苏州思源科安信息技术有限公司 | Imaging method for improving success rate of biological recognition |
| CN108171240A (en) * | 2017-12-28 | 2018-06-15 | 浙江德景电子科技有限公司 | A kind of method based on the optimization of intelligent ultrathin terminal iris recognition picture quality |
| CN111695474B (en) * | 2020-06-03 | 2021-12-10 | 福建福特科光电股份有限公司 | Method for adaptively adjusting gamma curve of iris image of human eye |
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