CN103134977A - Large current detection device and large current detection method - Google Patents
Large current detection device and large current detection method Download PDFInfo
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Abstract
The invention discloses a large current detection device and a large current detection method. The large current detection device comprises a first transistor and additionally comprises a second transistor, wherein the first transistor is connected with a voltage source and a first resistor, the second transistor is connected with the voltage source through a second resistor and connected with the first transistor, the first transistor and the second transistor receive voltage drop obtained by conversion of a current signal through the first resistor, the voltage source generates a first current passing through the first resistor and the first transistor and a second current passing through the second resistor and the second transistor according to the voltage drop, when the current signal is enlarged gradually, the voltage drop is enlarged, when the first current is enlarged, the second current wanes, and the second transistor outputs a mark voltage to achieve the effects of sensitive and accurate detection when the output level of the second transistor and the output level of the first transistor are turned over.
Description
Technical field
The present invention relates to a kind of detection techniques, particularly about a kind of large current sense device and method for detecting thereof.
Background technology
Integrated circuit technique is prevailing in recent years, so transistorized application is generally used on various electronic components, such as a kind of D class A amplifier A of sound signal, it is a kind of high efficiency amplifier, is commonly used to drive the loudspeaker of high capacity.Because the power conversion efficiency of this amplifier is high, therefore be widely used on portable electronic products in recent years.
Yet, in the circuit design of various electronic equipments, the occasion that ask for something is higher need to be carried out to the electric current by load accurate detection, thereby reach purposes such as preventing the excessive damaged circuit of electric current or element, and general circuit design is usually perfect not to the detecting of the electric current by load.For instance.As shown in Figure 1, prior art connects a load 12 and a decision circuitry 14 with an analog-digital converter 10 usually.When too high by the load current of load 12; analog-digital converter 10 can receive the voltage at load 12 two ends; and become a digital signal to export in decision circuitry 14 this voltage transitions; then, decision circuitry 14 just can convert this digital signal to the holding circuit that one short-circuit signal is exported to next stage.Except utilizing analog-digital converter 10 and decision circuitry 14, more can utilize an analog level comparer to receive the voltage at load 12 two ends, and come thus the output short-circuit signal.But analog level comparer and analog-digital converter 10 all need galvanic current source potential circuit, and this is power consumption not only, and cause the complexity of line design to increase with fiduciary level and reduce.
Therefore, the present invention is directed to above-mentioned puzzlement, propose a kind of large current sense device and method for detecting thereof, to solve the problem that prior art was produced.
Summary of the invention
Fundamental purpose of the present invention, be to provide a kind of large current sense device and method for detecting thereof, it mainly adopts two transistors to detect, the level deviation that a transistor wherein causes in order to the pressure drop of detecting large electric current generation, the offset voltage level of setting to compensate another transistor, when full remuneration, just exportable expression detects the signal of large electric current, and this technology not only simple cost is low but also detecting is precisely sensitive.
For reaching above-mentioned purpose, the invention provides a kind of large current sense device, it connects a current diverter, current diverter receives a current signal, to be converted to a voltage drop output, large current sense device comprises a first transistor, and it connects a voltage source, and connect current diverter by one first resistance, and current diverter is connected voltage source with the first resistance.One transistor seconds is separately arranged, connect voltage source by one second resistance, and connect the first transistor and current diverter.The first transistor and transistor seconds fall by the first resistance receiver voltage, and voltage source reaches one second electric current by the second resistance and transistor seconds according to one first electric current of voltage drop generation by the first resistance and the first transistor.When current signal becomes large gradually, it is large that voltage drop becomes, and the change of the first electric current is large, and the second electric current diminishes, until the second voltage between transistor seconds and current diverter is when equaling the first voltage between the first resistance and the first transistor, transistor seconds output one sign voltage.
Above-mentioned the first transistor is a NPN bipolar junction-type transistor, and its collector is connected with base stage, and connects above-mentioned voltage source, and emitter connects the first above-mentioned resistance; And above-mentioned transistor seconds is the 2nd NPN bipolar junction-type transistor, and its collector connects the second above-mentioned resistance, and emitter connects above-mentioned current diverter, and base stage connects the above-mentioned base stage of an above-mentioned NPN bipolar junction-type transistor.
Above-mentioned second voltage is the emitter voltage of above-mentioned the 2nd NPN bipolar junction-type transistor, the first above-mentioned voltage is the emitter voltage of an above-mentioned NPN bipolar junction-type transistor, above-mentioned sign voltage is the collector voltage of above-mentioned the 2nd NPN bipolar junction-type transistor, be also high level voltage, above-mentioned voltage source is positive voltage source.
Above-mentioned the first transistor is a PNP bipolar junction-type transistor, and its collector is connected with base stage, and connects above-mentioned voltage source, and emitter connects the first above-mentioned resistance; And above-mentioned transistor seconds is the 2nd PNP bipolar junction-type transistor, and its collector connects the second above-mentioned resistance, and emitter connects above-mentioned current diverter, and base stage connects the above-mentioned base stage of an above-mentioned PNP bipolar junction-type transistor.
Above-mentioned second voltage is the emitter voltage of above-mentioned the 2nd PNP bipolar junction-type transistor, the first above-mentioned voltage is the emitter voltage of an above-mentioned PNP bipolar junction-type transistor, above-mentioned sign voltage is the collector voltage of above-mentioned the 2nd PNP bipolar junction-type transistor, be also low level voltage, above-mentioned voltage source is negative voltage source.
Above-mentioned the first transistor is the first n channel metal oxide semiconductor field effect transistor, and its drain electrode is connected with grid, and connects above-mentioned voltage source, and source electrode connects the first above-mentioned resistance; And above-mentioned transistor seconds is the second n channel metal oxide semiconductor field effect transistor, its drain electrode connects the second above-mentioned resistance, source electrode connects above-mentioned current diverter, and grid connects the above-mentioned grid of the first above-mentioned n channel metal oxide semiconductor field effect transistor.
Above-mentioned second voltage is the source voltage of above-mentioned the second n channel metal oxide semiconductor field effect transistor, the first above-mentioned voltage is the source voltage of above-mentioned the first n channel metal oxide semiconductor field effect transistor, above-mentioned sign voltage is the drain voltage of above-mentioned the second n channel metal oxide semiconductor field effect transistor, be also high level voltage, above-mentioned voltage source is positive voltage source.
Above-mentioned the first transistor is the first P-channel metal-oxide-semiconductor field effect transistor, and its drain electrode is connected with grid, and connects above-mentioned voltage source, and source electrode connects the first above-mentioned resistance; And above-mentioned transistor seconds is the second P-channel metal-oxide-semiconductor field effect transistor, its drain electrode connects the second above-mentioned resistance, source electrode connects above-mentioned current diverter, and grid connects the above-mentioned grid of the first above-mentioned P-channel metal-oxide-semiconductor field effect transistor.
Above-mentioned second voltage is the source voltage of above-mentioned the second P-channel metal-oxide-semiconductor field effect transistor, the first above-mentioned voltage is the source voltage of above-mentioned the first P-channel metal-oxide-semiconductor field effect transistor, above-mentioned sign voltage is the drain voltage of above-mentioned the second P-channel metal-oxide-semiconductor field effect transistor, be also low level voltage, above-mentioned voltage source is negative voltage source.
Above-mentioned current diverter sequentially contact a load and an electrical storage device, above-mentioned electrical storage device provides the above-mentioned current signal by above-mentioned load.
The present invention also provides a kind of large current sense method for detecting, and it utilizes above-mentioned arrangement for detecting to carry out it.At first, the first transistor and transistor seconds fall by the first resistance receiver voltage, and voltage source is according to voltage drop, produce by one first electric current of the first resistance with the first transistor, with one second electric current that passes through the second resistance and transistor seconds.Then, become gradually large at current signal, and it is large to drive the voltage drop change, it is large that the first electric current becomes, and when the second electric current diminishes, judge whether second voltage between transistor seconds and above-mentioned current diverter equals the first voltage between the first resistance and the first transistor, if, transistor seconds output one sign voltage; If not, keep above-mentioned steps.
Above-mentioned voltage source is positive voltage source, and above-mentioned sign voltage is high level voltage.
Above-mentioned voltage source is negative voltage source, and above-mentioned sign voltage is low level voltage.
Effect of the present invention is, proposes a kind of large current sense device and method for detecting thereof, perfect detection method by load current, do not need galvanic current source potential circuit, save the consumption of electric energy, reduced the complexity of line design, increased the fiduciary level of line design.
Description of drawings
Fig. 1 is the large current sense device circuit schematic diagram of prior art.
Fig. 2 is first embodiment of the present invention circuit diagram.
Fig. 3 is second embodiment of the present invention circuit diagram.
Fig. 4 is third embodiment of the present invention circuit diagram.
Fig. 5 is fourth embodiment of the present invention circuit diagram.
Description of reference numerals: 10-analog-digital converter; The 12-load; The 14-decision circuitry; The 16-current diverter; The 18-load; The 20-electrical storage device; 26-the one NPN bipolar junction-type transistor; 28-the 2nd NPN bipolar junction-type transistor; The 30-voltage source; 32-the first resistance; 34-the second resistance; 36-the one PNP bipolar junction-type transistor; 38-the 2nd PNP bipolar junction-type transistor; 40-the first n channel metal oxide semiconductor field effect transistor; 42-the second n channel metal oxide semiconductor field effect transistor; 44-the first P-channel metal-oxide-semiconductor field effect transistor; 46-the second P-channel metal-oxide-semiconductor field effect transistor.
Embodiment
Hereby for making your juror to architectural feature of the present invention and the effect reached, further understanding and understanding be arranged more, sincerely help with preferred embodiment figure and coordinate detailed explanation, illustrate as after: the present invention mainly uses two transistors to form the annexation of similar current mirror, utilize its sensitivity characteristics to complete large current sense, wherein, transistor can be NPN bipolar junction-type transistor, PNP bipolar junction-type transistor, n channel metal oxide semiconductor field effect transistor or P-channel metal-oxide-semiconductor field effect transistor.Below with reference to accompanying drawing, introduce the present invention with these four kinds of embodiment.In addition, and apply the present invention to be illustrated in short circuit detecting.
Below introduce the first embodiment, see also Fig. 2.The present invention connects a current diverter 16, this current diverter sequentially contact a load 18 and an electrical storage device 20, electrical storage device 20 provides the current signal by load 18, make current diverter 16 receive a current signal, to be converted to a voltage drop output, this voltage is reduced to the voltage difference of b1 in figure, a1.The present invention comprises a first transistor and a transistor seconds, and it is respectively take a NPN bipolar junction-type transistor 26 and the 2nd NPN bipolar junction-type transistor 28 as example.The collector of the one NPN bipolar junction-type transistor 26 is connected with base stage, and connects the positive voltage source as a voltage source 30, and emitter connects current diverter 16 by one first resistance 32, and current diverter 16 is connected voltage source 30 with the first resistance 32.The collector of the 2nd NPN bipolar junction-type transistor 28 connects voltage source 30 by one second resistance 34, and emitter connects current diverter 16, and base stage connects the base stage of a NPN bipolar junction-type transistor 26.The one NPN bipolar junction-type transistor 26 and the 2nd NPN bipolar junction-type transistor 28 receive above-mentioned voltage drop by the first resistance 32, and voltage source 30 produces one first electric current that passes through the first resistance 32 and a NPN bipolar junction-type transistor 26 according to voltage drop, and passes through one second electric current of the second resistance 34 and the 2nd NPN bipolar junction-type transistor 28.When current signal becomes large gradually, it is large that voltage drop becomes, and it is large that the first electric current becomes, the second electric current diminishes, until the second voltage between the 2nd NPN bipolar junction-type transistor 28 and current diverter 16 is when equaling the first voltage between the first resistance 32 and a NPN bipolar junction-type transistor 26, the 2nd NPN bipolar junction-type transistor 28 is in sign voltage, the i.e. voltage of c1 in figure of collector output high level voltage.Wherein the first voltage is the emitter voltage of a NPN bipolar junction-type transistor 26; Second voltage is the emitter voltage of the 2nd NPN bipolar junction-type transistor 28, is the voltage of b1.
The How It Works of the first embodiment below is described.At first, the one NPN bipolar junction-type transistor 26 and the 2nd NPN bipolar junction-type transistor 28 receive above-mentioned voltage drop by the first resistance 32, and voltage source 30 is according to voltage drop, produce the first electric current by the first resistance 32 and a NPN bipolar junction-type transistor 26, with the second electric current by the second resistance 34 and the 2nd NPN bipolar junction-type transistor 28.when the resistance of load 18 significantly reduces, cause current signal to become gradually large, become the short-circuit current signal, and when driving voltage drop and becoming large, the voltage of b1 can improve, the second electric current like this diminishes, and it is large that the first electric current becomes, at this moment, the one NPN bipolar junction-type transistor 26 and the 2nd NPN bipolar junction-type transistor 28 can judge voluntarily, whether the emitter voltage of the 2nd NPN bipolar junction-type transistor 28 equals the emitter voltage of a NPN bipolar junction-type transistor 26, if, be in the 2nd NPN bipolar junction-type transistor 28 output levels overturn, the 2nd NPN bipolar junction-type transistor 28 is in the above-mentioned sign voltage of collector output, if not, keep a NPN bipolar junction-type transistor 26 and the 2nd NPN bipolar junction-type transistor 28 above-mentioned voltage drops of reception, make voltage source 30 produce accordingly the step of above-mentioned the first electric current and the second electric current.In other words, the level deviation that the pressure drop that the present invention utilizes the NPN bipolar junction-type transistor 26 large electric currents of detecting to produce causes, the offset voltage level of setting to compensate the 2nd NPN bipolar junction-type transistor 28, and when full remuneration, output expression detects the signal of large electric current, to reach simple, the with low cost and detecting sensitivity of technology effect accurately.
Below introduce the second embodiment, see also Fig. 3.The second embodiment and the first embodiment difference are the first transistor of the second embodiment and transistor seconds respectively take a PNP bipolar junction-type transistor 36 and the 2nd PNP bipolar junction-type transistor 38 as example, and voltage source 30 is negative voltage source.The collector of the one PNP bipolar junction-type transistor 36 is connected with base stage, and connects voltage source 30, and emitter connects current diverter 16 by the first resistance 32, and current diverter 16 is connected voltage source 30 with the first resistance 32.The collector of the 2nd PNP bipolar junction-type transistor 38 connects voltage source 30 by the second resistance 34, and emitter connects current diverter 16, and base stage connects the base stage of a PNP bipolar junction-type transistor 36.The one PNP bipolar junction-type transistor 36 and the 2nd PNP bipolar junction-type transistor 38 fall by the first resistance 32 receiver voltages, this voltage is reduced to the voltage difference of a2 in figure, b2, and voltage source 30 produces one first electric current that passes through the first resistance 32 and a PNP bipolar junction-type transistor 36 according to voltage drop, and passes through one second electric current of the second resistance 34 and the 2nd PNP bipolar junction-type transistor 38.When current signal becomes large gradually, it is large that voltage drop becomes, and it is large that the first electric current becomes, the second electric current diminishes, until the second voltage between the 2nd PNP bipolar junction-type transistor 38 and current diverter 16 is when equaling the first voltage between the first resistance 32 and a PNP bipolar junction-type transistor 36, the 2nd PNP bipolar junction-type transistor 38 is in sign voltage, the i.e. voltage of c2 in figure of collector output low level voltage.Wherein the first voltage is the emitter voltage of a PNP bipolar junction-type transistor 36; Second voltage is the emitter voltage of the 2nd PNP bipolar junction-type transistor 38, is the voltage of b2.
The How It Works of the second embodiment below is described.At first, the one PNP bipolar junction-type transistor 36 and the 2nd PNP bipolar junction-type transistor 38 receive above-mentioned voltage drop by the first resistance 32, and voltage source 30 is according to voltage drop, produce the first electric current by the first resistance 32 and a PNP bipolar junction-type transistor 36, with the second electric current by the second resistance 34 and the 2nd PNP bipolar junction-type transistor 38.when the resistance of load 18 significantly reduces, cause current signal to become gradually large, become the short-circuit current signal, and when driving voltage drop and becoming large, the voltage of b2 can descend, the second electric current like this diminishes, and it is large that the first electric current becomes, at this moment, the one PNP bipolar junction-type transistor 36 and the 2nd PNP bipolar junction-type transistor 38 can judge voluntarily, whether the emitter voltage of the 2nd PNP bipolar junction-type transistor 38 equals the emitter voltage of a PNP bipolar junction-type transistor 36, if, be in the 2nd PNP bipolar junction-type transistor 38 output levels overturn, the 2nd PNP bipolar junction-type transistor 38 is in the above-mentioned sign voltage of collector output, if not, keep a PNP bipolar junction-type transistor 36 and the 2nd PNP bipolar junction-type transistor 38 above-mentioned voltage drops of reception, make voltage source 30 produce accordingly the step of above-mentioned the first electric current and the second electric current.In other words, the second embodiment also can reach and detect the effects such as sensitive accurate.
Below introduce the 3rd embodiment, see also Fig. 4.The 3rd embodiment and the first embodiment difference are that the first transistor of the 3rd embodiment and transistor seconds are respectively take the first n channel metal oxide semiconductor field effect transistor 40 and the second n channel metal oxide semiconductor field effect transistor 42 as example.The drain electrode of the first n channel metal oxide semiconductor field effect transistor 40 is connected with grid, and connects voltage source 30, and source electrode connects current diverter 16 by the first resistance 32, and current diverter 16 is connected voltage source 30 with the first resistance 32.The drain electrode of the second n channel metal oxide semiconductor field effect transistor 42 connects voltage source 30 by the second resistance 34, and source electrode connects current diverter 16, and grid connects the grid of the first n channel metal oxide semiconductor field effect transistor 40.The first n channel metal oxide semiconductor field effect transistor 40 and the second n channel metal oxide semiconductor field effect transistor 42 fall by the first resistance 32 receiver voltages, this voltage is reduced to the voltage difference of b3 in figure, a3, and voltage source 30 produces one first electric current that passes through the first resistance 32 and the first n channel metal oxide semiconductor field effect transistor 40 according to voltage drop, and passes through one second electric current of the second resistance 34 and the second n channel metal oxide semiconductor field effect transistor 42.When current signal becomes large gradually, it is large that voltage drop becomes, and it is large that the first electric current becomes, the second electric current diminishes, until the second voltage between the second n channel metal oxide semiconductor field effect transistor 42 and current diverter 16 is when equaling the first voltage between the first resistance 32 and the first n channel metal oxide semiconductor field effect transistor 40, the second n channel metal oxide semiconductor field effect transistor 42 is in sign voltage, the i.e. voltage of c3 in figure of drain electrode output high level voltage.Wherein the first voltage is the source voltage of the first n channel metal oxide semiconductor field effect transistor 40; Second voltage is the source voltage of the second n channel metal oxide semiconductor field effect transistor 42, is the voltage of b3.
The How It Works of the 3rd embodiment below is described.At first, the first n channel metal oxide semiconductor field effect transistor 40 and the second n channel metal oxide semiconductor field effect transistor 42 receive above-mentioned voltage drop by the first resistance 32, and voltage source 30 is according to voltage drop, produce the first electric current by the first resistance 32 and the first n channel metal oxide semiconductor field effect transistor 40, with the second electric current by the second resistance 34 and the second n channel metal oxide semiconductor field effect transistor 42.when the resistance of load 18 significantly reduces, cause current signal to become gradually large, become the short-circuit current signal, and when driving voltage drop and becoming large, the voltage of b 3 can improve, the second electric current like this diminishes, and it is large that the first electric current becomes, at this moment, the first n channel metal oxide semiconductor field effect transistor 40 and the second n channel metal oxide semiconductor field effect transistor 42 can judge voluntarily, whether the source voltage of the second n channel metal oxide semiconductor field effect transistor 42 equals the source voltage of the first n channel metal oxide semiconductor field effect transistor 40, if, be in the second n channel metal oxide semiconductor field effect transistor 42 output levels overturn, the second n channel metal oxide semiconductor field effect transistor 42 is in the above-mentioned sign voltage of drain electrode output, if not, keep the first n channel metal oxide semiconductor field effect transistor 40 and the second n channel metal oxide semiconductor field effect transistor 42 above-mentioned voltage drops of reception, make voltage source 30 produce accordingly the step of above-mentioned the first electric current and the second electric current.In other words, the 3rd embodiment also can reach and detect the effects such as sensitive accurate.
Below introduce the 4th embodiment, see also Fig. 5.The 4th embodiment and the first embodiment difference are the first transistor of the 4th embodiment and transistor seconds respectively take the first P-channel metal-oxide-semiconductor field effect transistor 44 and the second P-channel metal-oxide-semiconductor field effect transistor 46 as example, and voltage source 30 is negative voltage source.The drain electrode of the first P-channel metal-oxide-semiconductor field effect transistor 44 is connected with grid, and connects voltage source 30, and source electrode connects current diverter 16 by the first resistance 32, and current diverter 16 is connected voltage source 30 with the first resistance 32.The drain electrode of the second P-channel metal-oxide-semiconductor field effect transistor 46 connects voltage source 30 by the second resistance 34, and source electrode connects current diverter 16, and grid connects the grid of the first P-channel metal-oxide-semiconductor field effect transistor 44.The first P-channel metal-oxide-semiconductor field effect transistor 44 and the second P-channel metal-oxide-semiconductor field effect transistor 46 fall by the first resistance 32 receiver voltages, this voltage is reduced to the voltage difference of a4 in figure, b4, and voltage source 30 produces one first electric current that passes through the first resistance 32 and the first P-channel metal-oxide-semiconductor field effect transistor 44 according to voltage drop, and passes through one second electric current of the second resistance 34 and the second P-channel metal-oxide-semiconductor field effect transistor 46.When current signal becomes large gradually, it is large that voltage drop becomes, and it is large that the first electric current becomes, the second electric current diminishes, until the second voltage between the second P-channel metal-oxide-semiconductor field effect transistor 46 and current diverter 16 is when equaling the first voltage between the first resistance 32 and the first P-channel metal-oxide-semiconductor field effect transistor 44, the second P-channel metal-oxide-semiconductor field effect transistor 46 is in sign voltage, the i.e. voltage of c4 in figure of drain electrode output low level voltage.Wherein the first voltage is the source voltage of the first P-channel metal-oxide-semiconductor field effect transistor 44; Second voltage is the source voltage of the second P-channel metal-oxide-semiconductor field effect transistor 46, is the voltage of b4.
The How It Works of the 4th embodiment below is described.At first, the first P-channel metal-oxide-semiconductor field effect transistor 44 and the second P-channel metal-oxide-semiconductor field effect transistor 46 receive above-mentioned voltage drop by the first resistance 32, and voltage source 30 is according to voltage drop, produce the first electric current by the first resistance 32 and the first P-channel metal-oxide-semiconductor field effect transistor 44, with the second electric current by the second resistance 34 and the second P-channel metal-oxide-semiconductor field effect transistor 46.when the resistance of load 18 significantly reduces, cause current signal to become gradually large, become the short-circuit current signal, and when driving voltage drop and becoming large, the voltage of b4 can descend, the second electric current like this diminishes, and it is large that the first electric current becomes, at this moment, the first P-channel metal-oxide-semiconductor field effect transistor 44 and the second P-channel metal-oxide-semiconductor field effect transistor 46 can judge voluntarily, whether the source voltage of the second P-channel metal-oxide-semiconductor field effect transistor 46 equals the source voltage of the first P-channel metal-oxide-semiconductor field effect transistor 44, if, be in the second P-channel metal-oxide-semiconductor field effect transistor 46 output levels overturn, the second P-channel metal-oxide-semiconductor field effect transistor 46 is in the above-mentioned sign voltage of drain electrode output, if not, keep the first P-channel metal-oxide-semiconductor field effect transistor 44 and the second P-channel metal-oxide-semiconductor field effect transistor 46 above-mentioned voltage drops of reception, make above-mentioned voltage source 30 produce accordingly the step of above-mentioned the first electric current and the second electric current.In other words, the 4th embodiment also can reach and detect the effects such as sensitive accurate.
In sum, the present invention utilizes two transistors to carry out large current sense, to reach the effect of accurate reaction.
Above explanation is just illustrative for the purpose of the present invention, and nonrestrictive, and those of ordinary skills understand; in the situation that do not break away from the spirit and scope that following claims limit, can make many modifications, change; or equivalence, but all will fall within the scope of protection of the present invention.
Claims (13)
1. a large current sense device, is characterized in that, it connects a current diverter, and above-mentioned current diverter receives a current signal, and to be converted to a voltage drop output, above-mentioned large current sense device comprises:
One the first transistor connects a voltage source, and connects above-mentioned current diverter by one first resistance, and above-mentioned current diverter is connected above-mentioned voltage source with above-mentioned the first resistance; And
one transistor seconds, connect above-mentioned voltage source by one second resistance, and connect above-mentioned the first transistor and above-mentioned current diverter, above-mentioned the first transistor and above-mentioned transistor seconds receive above-mentioned voltage drop by the first above-mentioned resistance, and above-mentioned voltage source produces one first electric current by the first above-mentioned resistance and above-mentioned the first transistor according to above-mentioned voltage drop, and one second electric current by above-mentioned the second resistance and above-mentioned transistor seconds, when above-mentioned current signal becomes large gradually, it is large that above-mentioned voltage drop becomes, and the first above-mentioned electric current becomes large, the second above-mentioned electric current diminishes, until the second voltage between above-mentioned transistor seconds and above-mentioned current diverter is when equaling the first voltage between above-mentioned the first resistance and above-mentioned the first transistor, above-mentioned transistor seconds output one sign voltage.
2. large current sense device as claimed in claim 1, is characterized in that, above-mentioned the first transistor is a NPN bipolar junction-type transistor, and its collector is connected with base stage, and connect above-mentioned voltage source, and emitter connects the first above-mentioned resistance; And above-mentioned transistor seconds is the 2nd NPN bipolar junction-type transistor, and its collector connects the second above-mentioned resistance, and emitter connects above-mentioned current diverter, and base stage connects the above-mentioned base stage of an above-mentioned NPN bipolar junction-type transistor.
3. large current sense device as claimed in claim 2, it is characterized in that, above-mentioned second voltage is the emitter voltage of above-mentioned the 2nd NPN bipolar junction-type transistor, the first above-mentioned voltage is the emitter voltage of an above-mentioned NPN bipolar junction-type transistor, above-mentioned sign voltage is the collector voltage of above-mentioned the 2nd NPN bipolar junction-type transistor, be also high level voltage, above-mentioned voltage source is positive voltage source.
4. large current sense device as claimed in claim 1, is characterized in that, above-mentioned the first transistor is a PNP bipolar junction-type transistor, and its collector is connected with base stage, and connect above-mentioned voltage source, and emitter connects the first above-mentioned resistance; And above-mentioned transistor seconds is the 2nd PNP bipolar junction-type transistor, and its collector connects the second above-mentioned resistance, and emitter connects above-mentioned current diverter, and base stage connects the above-mentioned base stage of an above-mentioned PNP bipolar junction-type transistor.
5. large current sense device as claimed in claim 4, it is characterized in that, above-mentioned second voltage is the emitter voltage of above-mentioned the 2nd PNP bipolar junction-type transistor, the first above-mentioned voltage is the emitter voltage of an above-mentioned PNP bipolar junction-type transistor, above-mentioned sign voltage is the collector voltage of above-mentioned the 2nd PNP bipolar junction-type transistor, be also low level voltage, above-mentioned voltage source is negative voltage source.
6. large current sense device as claimed in claim 1, it is characterized in that, above-mentioned the first transistor is the first n channel metal oxide semiconductor field effect transistor, and its drain electrode is connected with grid, and connecting above-mentioned voltage source, source electrode connects the first above-mentioned resistance; And above-mentioned transistor seconds is the second n channel metal oxide semiconductor field effect transistor, its drain electrode connects the second above-mentioned resistance, source electrode connects above-mentioned current diverter, and grid connects the above-mentioned grid of the first above-mentioned n channel metal oxide semiconductor field effect transistor.
7. large current sense device as claimed in claim 6, it is characterized in that, above-mentioned second voltage is the source voltage of above-mentioned the second n channel metal oxide semiconductor field effect transistor, the first above-mentioned voltage is the source voltage of above-mentioned the first n channel metal oxide semiconductor field effect transistor, above-mentioned sign voltage is the drain voltage of above-mentioned the second n channel metal oxide semiconductor field effect transistor, be also high level voltage, above-mentioned voltage source is positive voltage source.
8. large current sense device as claimed in claim 1, it is characterized in that, above-mentioned the first transistor is the first P-channel metal-oxide-semiconductor field effect transistor, and its drain electrode is connected with grid, and connecting above-mentioned voltage source, source electrode connects the first above-mentioned resistance; And above-mentioned transistor seconds is the second P-channel metal-oxide-semiconductor field effect transistor, its drain electrode connects the second above-mentioned resistance, source electrode connects above-mentioned current diverter, and grid connects the above-mentioned grid of the first above-mentioned P-channel metal-oxide-semiconductor field effect transistor.
9. large current sense device as claimed in claim 8, it is characterized in that, above-mentioned second voltage is the source voltage of above-mentioned the second P-channel metal-oxide-semiconductor field effect transistor, the first above-mentioned voltage is the source voltage of above-mentioned the first P-channel metal-oxide-semiconductor field effect transistor, above-mentioned sign voltage is the drain voltage of above-mentioned the second P-channel metal-oxide-semiconductor field effect transistor, be also low level voltage, above-mentioned voltage source is negative voltage source.
10. large current sense device as claimed in claim 1, is characterized in that, above-mentioned current diverter sequentially contact a load and an electrical storage device, and above-mentioned electrical storage device provides the above-mentioned current signal by above-mentioned load.
11. a large current detection method that is applied to large current sense device claimed in claim 1 is characterized in that, comprises the following step:
Above-mentioned the first transistor and above-mentioned transistor seconds receive above-mentioned voltage drop by the first above-mentioned resistance, and above-mentioned voltage source is according to above-mentioned voltage drop, produce by one first electric current of the first above-mentioned resistance with above-mentioned the first transistor, with one second electric current that passes through the second above-mentioned resistance and above-mentioned transistor seconds; And
Become gradually large at above-mentioned current signal, and it is large to drive above-mentioned voltage drop change, the first above-mentioned electric current becomes large, and when the second above-mentioned electric current diminishes, judge whether second voltage between above-mentioned transistor seconds and above-mentioned current diverter equals the first voltage between above-mentioned the first resistance and above-mentioned the first transistor:
If, above-mentioned transistor seconds output one sign voltage; And
If not, keep above-mentioned steps.
12. large current detection method as claimed in claim 11 is characterized in that, above-mentioned voltage source is positive voltage source, and above-mentioned sign voltage is high level voltage.
13. large current detection method as claimed in claim 11 is characterized in that, above-mentioned voltage source is negative voltage source, and above-mentioned sign voltage is low level voltage.
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| CN201110384183.8A CN103134977B (en) | 2011-11-28 | 2011-11-28 | Big current arrangement for detecting and method for detecting thereof |
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| CN103134977A true CN103134977A (en) | 2013-06-05 |
| CN103134977B CN103134977B (en) | 2015-08-19 |
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| CN201110384183.8A Active CN103134977B (en) | 2011-11-28 | 2011-11-28 | Big current arrangement for detecting and method for detecting thereof |
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| CN (1) | CN103134977B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103607193A (en) * | 2013-11-06 | 2014-02-26 | 苏州贝克微电子有限公司 | Interface circuit which provides voltage conversion for TTL and CMOS circuits |
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| EP0723160B1 (en) * | 1995-01-23 | 1997-12-29 | STMicroelectronics S.A. | Voltage detection circuit compensated for technology and for temperature |
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| US20020005740A1 (en) * | 1998-02-27 | 2002-01-17 | Hong Seok Kim | Power-up/power-down detection circuit |
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| CN1954469A (en) * | 2004-05-18 | 2007-04-25 | 罗姆股份有限公司 | Excess current detecting circuit and power supply device provided with it |
| CN101672867A (en) * | 2008-09-12 | 2010-03-17 | 恩益禧电子股份有限公司 | Overcurrent detection circuit |
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| JPH03105262A (en) * | 1989-09-20 | 1991-05-02 | Toshiba Corp | Current detecting circuit |
| EP0723160B1 (en) * | 1995-01-23 | 1997-12-29 | STMicroelectronics S.A. | Voltage detection circuit compensated for technology and for temperature |
| CN1229922A (en) * | 1998-01-16 | 1999-09-29 | 日本电气株式会社 | Current sensing circuit |
| US20020005740A1 (en) * | 1998-02-27 | 2002-01-17 | Hong Seok Kim | Power-up/power-down detection circuit |
| CN1576859A (en) * | 2003-07-16 | 2005-02-09 | 恩益禧电子股份有限公司 | Power supply control apparatus including highly-reliable overcurrent detecting circuit |
| CN1954469A (en) * | 2004-05-18 | 2007-04-25 | 罗姆股份有限公司 | Excess current detecting circuit and power supply device provided with it |
| CN101672867A (en) * | 2008-09-12 | 2010-03-17 | 恩益禧电子股份有限公司 | Overcurrent detection circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103607193A (en) * | 2013-11-06 | 2014-02-26 | 苏州贝克微电子有限公司 | Interface circuit which provides voltage conversion for TTL and CMOS circuits |
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|---|---|
| CN103134977B (en) | 2015-08-19 |
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