CN104636789A - Demodulation circuit used for RFID tag chip - Google Patents
Demodulation circuit used for RFID tag chip Download PDFInfo
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- CN104636789A CN104636789A CN201310554580.4A CN201310554580A CN104636789A CN 104636789 A CN104636789 A CN 104636789A CN 201310554580 A CN201310554580 A CN 201310554580A CN 104636789 A CN104636789 A CN 104636789A
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- trench igbt
- bipolar transistor
- insulated gate
- gate bipolar
- electric capacity
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Abstract
The invention discloses a demodulation circuit used for an RFID tag chip. The demodulation circuit comprises a first diode, a second diode, a first capacitor, a second capacitor, a third capacitor, a first P-channel insulated gate bipolar transistor, a second P-channel insulated gate bipolar transistor, a third P-channel insulated gate bipolar transistor, a first N-channel insulated gate bipolar transistor, a second N-channel insulated gate bipolar transistor, a third N-channel insulated gate bipolar transistor, a first resistor, a second resistor, a comparator and a direct-current power supply. An envelope detection circuit is formed by the first P-channel insulated gate bipolar transistor, the first N-channel insulated gate bipolar transistor, the first resistor, the second resistor and the second capacitor. A mean value circuit is formed by the second resistor and the third capacitor. An inverter shaping circuit is formed by the second P-channel insulated gate bipolar transistor, the third P-channel insulated gate bipolar transistor, the second N-channel insulated gate bipolar transistor and the third N-channel insulated gate bipolar transistor. The demodulation circuit used for the RFID tag chip has the advantages that the comparator with a high dynamic range is used; the demodulation dynamic range of the demodulation circuit is large, so that a signal changes in a large range can be processed; the demodulation circuit is low in power consumption, good in stability and high in sensitivity.
Description
Technical field
The present invention relates to a kind of demodulator circuit for RFID label chip, particularly relate to a kind of demodulator circuit of the large low-power-consumptiohigh-sensitivity high-sensitivity of demodulation dynamic range for RFID label chip.
Background technology
RFID label tag needs to recover data the radiofrequency signal sent from reader, then processes data, and the data obtained are returned to read write line by emitting radio frequency signal.The effect of the demodulator circuit of RFID label chip recovers data from radiofrequency signal, and transfer to rear end control section to process.At present, the demodulation dynamic range of the demodulator circuit of RFID label chip is little, can not process the signal of wide variation.
Summary of the invention
Object of the present invention is just the demodulator circuit providing a kind of large low-power-consumptiohigh-sensitivity high-sensitivity of demodulation dynamic range for RFID label chip in order to solve the problem.
The present invention is achieved through the following technical solutions above-mentioned purpose:
Demodulator circuit for RFID label chip of the present invention, comprises the first diode, second diode, first electric capacity ~ the 3rd electric capacity, one P trench igbt ~ the 3rd P trench igbt, one N trench igbt ~ the 3rd N trench igbt, first resistance, second resistance, comparer and direct supply, the positive pole of described first diode is connected with the negative pole of described second diode and as the signal input part of described demodulator circuit, the negative pole of described first diode simultaneously with the first end of described first electric capacity, the emitter of a described P trench igbt, the collector of a described N trench igbt, the first end of described second resistance connects, the base stage of a described P trench igbt simultaneously with the collector of a described P trench igbt, the first end of described first resistance, the base stage of a described N trench igbt connects, the positive pole of described second diode simultaneously with the second end of described first electric capacity, second end of described first resistance, the emitter of a described N trench igbt, the first end of described second electric capacity, the first end of described 3rd electric capacity, the negative power supply input end of described comparer, the emitter of described 2nd N trench igbt, the emitter of described 3rd N trench igbt, the negative pole of described direct supply connects, and the second end of described second electric capacity is connected with the inverting input of described comparer, with the second end of described 3rd electric capacity while of the second end of described second resistance, the normal phase input end of described comparer connects, the output terminal of described comparer simultaneously with the base stage of described 2nd P trench igbt, the base stage of described 2nd N trench igbt connects, the positive pole of described direct supply simultaneously with the cathode power supply input end of described comparer, the emitter of described 2nd P trench igbt, the emitter of described 3rd P trench igbt connects, the collector of described 2nd P trench igbt simultaneously with the base stage of described 3rd P trench igbt, the collector of described 2nd N trench igbt, the base stage of described 3rd N trench igbt connects, and the collector of described 3rd P trench igbt is connected with the collector of described 3rd N trench igbt and as the signal output part of described demodulator circuit.
Beneficial effect of the present invention is:
Demodulator circuit for RFID label chip of the present invention, uses the comparer of high dynamic range.The demodulation dynamic range of this demodulator circuit is large, can process the signal of change on a large scale.The power consumption of this demodulator circuit is little, good stability, highly sensitive.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the demodulator circuit for RFID label chip of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described:
As shown in Figure 1, the demodulator circuit for RFID label chip of the present invention, comprises the first diode D1, second diode D2, first electric capacity C1, second electric capacity C2, 3rd electric capacity C3, one P trench igbt MP1, 2nd P trench igbt MP2, 3rd P trench igbt MP3, one N trench igbt MN1, 2nd N trench igbt MN2, 3rd N trench igbt MN3, first resistance R1, second resistance R2, comparer A and direct supply (not shown in FIG.), the positive pole of the first diode D1 be connected with the negative pole D2 of the second diode and as the signal input part IN of demodulator circuit, the first diode D1 negative pole simultaneously with the first end of the first electric capacity C1, the emitter of the one P trench igbt MP1, the collector of the one N trench igbt MN1, the first end of the second resistance R2 connects, the base stage of a P trench igbt MP1 simultaneously with the collector of a P trench igbt MP1, the first end of the first resistance R1, the base stage of the one N trench igbt MN1 connects, the positive pole of the second diode D2 simultaneously with second end of the first electric capacity C1, second end of the first resistance R1, the emitter of the one N trench igbt MN1, the first end of the second electric capacity C2, the first end of the 3rd electric capacity C3, the negative power supply input end of comparer A, the emitter of the 2nd N trench igbt MN2, the emitter of the 3rd N trench igbt MN3, the negative pole of direct supply connects, and second end of the second electric capacity C2 is connected with the inverting input of comparer A, with second end of the 3rd electric capacity C3 while of second end of the second resistance R2, the normal phase input end of comparer A connects, the output terminal of comparer A simultaneously with the base stage of the 2nd P trench igbt MP2, the base stage of the 2nd N trench igbt MN2 connects, the positive pole of direct supply simultaneously with the cathode power supply input end of comparer A, the emitter of the 2nd P trench igbt MP2, the emitter of the 3rd P trench igbt MP3 connects, the collector of the 2nd P trench igbt MP2 simultaneously with the base stage of the 3rd P trench igbt MP3, the collector of the 2nd N trench igbt MN2, the base stage of the 3rd N trench igbt MN3 connects, and the collector of the 3rd P trench igbt MP3 is connected with the collector of the 3rd N trench igbt MN3 and as the signal output part OUT of described demodulator circuit.
Demodulator circuit for RFID label chip of the present invention, by a P trench igbt MP1, one N trench igbt MP2, first resistance R1, second resistance R2 and the second electric capacity C2 forms envelope detection circuit and produces envelope signal, form average circuit by the second resistance R2 and the 3rd electric capacity C3 and produce comparer comparative voltage, by the 2nd P trench igbt MP2, 3rd P trench igbt MP3, 2nd N trench igbt MN2 and the 3rd N trench igbt MN3 forms phase inverter shaping circuit shaping output signal.This demodulator circuit uses the comparer A of high dynamic range, and demodulation dynamic range is large, can process the signal of change on a large scale.The power consumption of this demodulator circuit is little, good stability, highly sensitive.
Claims (1)
1. for a demodulator circuit for RFID label chip, it is characterized in that: comprise the first diode, second diode, first electric capacity ~ the 3rd electric capacity, one P trench igbt ~ the 3rd P trench igbt, one N trench igbt ~ the 3rd N trench igbt, first resistance, second resistance, comparer and direct supply, the positive pole of described first diode is connected with the negative pole of described second diode and as the signal input part of described demodulator circuit, the negative pole of described first diode simultaneously with the first end of described first electric capacity, the emitter of a described P trench igbt, the collector of a described N trench igbt, the first end of described second resistance connects, the base stage of a described P trench igbt simultaneously with the collector of a described P trench igbt, the first end of described first resistance, the base stage of a described N trench igbt connects, the positive pole of described second diode simultaneously with the second end of described first electric capacity, second end of described first resistance, the emitter of a described N trench igbt, the first end of described second electric capacity, the first end of described 3rd electric capacity, the negative power supply input end of described comparer, the emitter of described 2nd N trench igbt, the emitter of described 3rd N trench igbt, the negative pole of described direct supply connects, and the second end of described second electric capacity is connected with the inverting input of described comparer, with the second end of described 3rd electric capacity while of the second end of described second resistance, the normal phase input end of described comparer connects, the output terminal of described comparer simultaneously with the base stage of described 2nd P trench igbt, the base stage of described 2nd N trench igbt connects, the positive pole of described direct supply simultaneously with the cathode power supply input end of described comparer, the emitter of described 2nd P trench igbt, the emitter of described 3rd P trench igbt connects, the collector of described 2nd P trench igbt simultaneously with the base stage of described 3rd P trench igbt, the collector of described 2nd N trench igbt, the base stage of described 3rd N trench igbt connects, and the collector of described 3rd P trench igbt is connected with the collector of described 3rd N trench igbt and as the signal output part of described demodulator circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310554580.4A CN104636789A (en) | 2013-11-08 | 2013-11-08 | Demodulation circuit used for RFID tag chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310554580.4A CN104636789A (en) | 2013-11-08 | 2013-11-08 | Demodulation circuit used for RFID tag chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104636789A true CN104636789A (en) | 2015-05-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310554580.4A Pending CN104636789A (en) | 2013-11-08 | 2013-11-08 | Demodulation circuit used for RFID tag chip |
Country Status (1)
| Country | Link |
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| CN (1) | CN104636789A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109541347A (en) * | 2018-11-26 | 2019-03-29 | 国网冀北电力有限公司唐山供电公司 | A kind of sensor for electrical energy measurement |
| JP2021191006A (en) * | 2020-05-29 | 2021-12-13 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングRobert Bosch Gmbh | Backscatter communication system |
-
2013
- 2013-11-08 CN CN201310554580.4A patent/CN104636789A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109541347A (en) * | 2018-11-26 | 2019-03-29 | 国网冀北电力有限公司唐山供电公司 | A kind of sensor for electrical energy measurement |
| CN109541347B (en) * | 2018-11-26 | 2020-11-06 | 国网冀北电力有限公司唐山供电公司 | Sensor for electric energy metering |
| JP2021191006A (en) * | 2020-05-29 | 2021-12-13 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングRobert Bosch Gmbh | Backscatter communication system |
| JP7268088B2 (en) | 2020-05-29 | 2023-05-02 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | backscatter communication system |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150520 |