CN103132057A - Low impedance electric control circuit of touch panel and manufacture method thereof - Google Patents
Low impedance electric control circuit of touch panel and manufacture method thereof Download PDFInfo
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- CN103132057A CN103132057A CN2011103826293A CN201110382629A CN103132057A CN 103132057 A CN103132057 A CN 103132057A CN 2011103826293 A CN2011103826293 A CN 2011103826293A CN 201110382629 A CN201110382629 A CN 201110382629A CN 103132057 A CN103132057 A CN 103132057A
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Abstract
The invention provides a low impedance electric control circuit of a touch panel and a manufacture method of the low impedance electric control circuit. The following steps are further conducted on an indium tin oxide electric control circuit: a visible area coverage step, a pre- processing step, a chemical electrolyte-free nickel plating step, a thermal annealing step, a chemical exchange gold plating step, and a chemical exchange gold plating step. With the usage of the chemical electrolyte-free nickel, the chemical exchange gold plating step, the chemical exchange gold plating step and the thickened gold layer in the indium tin oxide electric control circuit, the low impedance electric circuit structure with special coating thickness is made. The resistance value of the surface of the low impedance electric circuit structure is lowered and touch signals are not easy to lose, deform and distort.
Description
Technical field
The present invention relates to a kind of structure and manufacture method thereof of contact panel, more particularly relate in contact panel, be used for reducing a kind of low-impedance electronic control circuit structure and the manufacture method thereof of the automatically controlled circuit impedance that the ITO transparency conducting layer forms.
Background technology
Evolution along with touch technology, the touch operator-machine-interface, as: contact panel (Touch Panel) has been widely used to electronic product miscellaneous, for replacing traditional input unit (as: keyboard and mouse etc.), facilitate the user to control and browsing data.
Contact panel (Touch Panel) generally can be divided into soft and rigid panel, a kind of rigid panel is transparent conductive panel described as follows, utilize glass substrate and transparency conducting layer formed thereon to form the bottom of transparent conductive panel, the top of transparent conductive panel is transparent conductive film, being used for the automatically controlled circuit of red-tape operati action lays respectively at the surrounding of top and the bottom transparent conductive panel, then by winding displacement and control IC and operated with touch control manner for the user.Contact panel can be divided into according to the manner of execution difference: resistance-type, condenser type, acoustic wave, optical guided wave formula, loading varying type etc.Soft panel can utilize light-permeable PET plastic base, transparency conducting layer and transparent conductive film to form respectively the transparent conductive panel of top and the bottom.
Traditionally, first by the exposure to the transparency conducting layer on base material/development/etch process, form the automatically controlled circuit that is positioned at the base material surrounding, yet the sheet resistance value that these automatically controlled circuits produce is greatly about 100 Ω/cm
2to 500 Ω/cm
2between, in order further to reduce this high impedance value, usually for example can recycle: the elargol print process, molybdenum/aluminium/molybdenum sputtering method, and copper platings/sputtering method etc. increases layer thickening method more form a kind of low-impedance electronic control circuit layer that is used for reducing the automatically controlled circuit impedance on the automatically controlled circuit of transparency conducting layer formation, yet known these production method complex process and required equipment are various, cause cost to improve, in addition, these production methods have the making limit on the live width spacing, day also the circuit live width of micro cause the lifting of making degree of difficulty and the reduction of yield, this is because adopt such production method, the impedance inequality easily occurs in circuit, broken string, or situation about being short-circuited etc. with adjacent lines.
Summary of the invention
One of the present invention purpose is to propose a kind of low-impedance electronic control circuit manufacture method of contact panel, and the structure that a kind of low-impedance electronic control circuit is provided, and this structure can improve the tolerance range of contact panel identification power and can reach meticulous circuit makes requirement.
Another object of the present invention is to use the structure of aforementioned low-impedance electronic control circuit, and its production method is able to simple and easy and precision.
For reaching above-mentioned purpose and other purpose, in the low-impedance electronic control circuit manufacture method of contact panel of the present invention, transparent conductive panel in this contact panel comprises base material and is formed at the tin indium oxide automatically controlled circuit on this base material, the method comprises: visible area covers step, is to expose this tin indium oxide automatically controlled circuit with this base material of protective membrane cover part; Pre-treatment step is to form palladium catalyst on this tin indium oxide automatically controlled circuit; Chemistry, without electrolytic nickel plating step, is that nickel metal layer is deposited on this tin indium oxide automatically controlled circuit; Chemical replacement gold plating step is that the gold layer is deposited on this nickel metal layer; And the gold-plated step of displacement reduction, be that golden supplemental layers is deposited on this gold layer, wherein, this nickel metal layer is without thermal anneal process.
Under various embodiment, chemistry without electrolytic nickel plating step in, can on this tin indium oxide automatically controlled circuit, deposit the nickel metal layer of 0.9 to 1.5 micron, moreover it is this transparent conductive panel to be soaked at the temperature of 70 ℃ to 80 ℃ in acidic solution to 12 to 18 minutes; Can, in chemical replacement gold plating step, deposit the gold layer of 0.08 to 0.13 micron on this nickel metal layer; In chemical replacement gold plating step, this transparent conductive panel can be soaked at the temperature of 85 ℃ to 95 ℃ and be soaked in acidic solution 0.5 to 2 minute; And, in the gold-plated step of this displacement reduction, this transparent conductive panel can be soaked at the temperature of 80 ℃ to 90 ℃ in acidic solution to 9 to 11 minutes.Accordingly, this low-impedance electronic control circuit that made completes only has every square centimeter of sheet resistance value below 0.3 ohm.
In the embodiment of pre-treatment step of the present invention, further can comprise following steps: cleaning step, modified step, catalytic step, catalysis post-processing step; Wherein, this cleaning step can carry out 4 to 6 minutes, and this modified step can be carried out 3 to 6 minutes, and this catalytic step can carry out 3 to 6 minutes, and this catalysis post-processing step can carry out 3 to 6 minutes.
In the embodiment of low-impedance electronic control circuit of the present invention, its structure comprises: this low-impedance electronic control circuit upwards sequentially includes tin indium oxide automatically controlled circuit layer, the nickel metal layer of 0.9 to 1.5 micron, gold layer, and the golden supplemental layers of 0.08 to 0.12 micron of 0.010 to 0.025 micron from this base material; Wherein, the thickness of this nickel metal layer can be 1 micron, and the thickness of this gold supplemental layers can be 0.1 micron, and the thickness of this gold layer can be 0.015 micron.
By covered with protective film on opticglass or blooming, so that be positioned on peripheral tin indium oxide automatically controlled circuit surface and sequentially form nickel metal layer, gold layer, and then can make its sheet resistance value be down to approximately 0.3 Ω/cm
2below, make the touch-control signal be difficult for loss, distortion and distortion, and then the monolithic stability degree of increase contact panel, and employing this method, be used for reducing resistance value and additional automatically controlled circuit layer is become more meticulous, its surface also is difficult for producing oxidation and has influence on the binding face combined in subsequent step, moreover, the production method of this spline structure also can lower whole cost of manufacture, and, under the present invention obtains method, can after forming this nickel metal layer, not need through thermal anneal process, to process again, also can save the time of making.
The accompanying drawing explanation
Automatically controlled circuit schematic diagram on the transparent conductive panel that Fig. 1 is general contact panel.
The manufacture method schema that Fig. 2 is the anti-automatically controlled circuit of embodiment of the present invention medium or low resistance.
The schema of the different embodiment that Fig. 3 is three kinds of covering steps that complete step S50 in Fig. 2.
Fig. 4 is the chemical manufacture method schema without electrolysis process in the embodiment of the present invention.
Fig. 5 is according to the sectional view under I-I ' line segment of Fig. 1.
100 transparent conductive panels
1001 base materials
1002 transparency conducting layers
101 tin indium oxide automatically controlled circuits
103 signal winding displacements
105 nickel metal layers
107 gold medal layers
109 gold medal supplemental layers
The A visible area
The B invisible range
I-I ' line segment
S10～S100 step
Embodiment
For fully understanding the present invention's purpose, feature and effect, hereby by following concrete embodiment, and coordinate accompanying drawing, the present invention is elaborated, illustrate as rear:
The present invention's additional low resistance circuit layer on original automatically controlled circuit is different from the low resistance circuit layer that elargol print process, molybdenum/aluminium/molybdenum sputtering method and copper plating sputtering method etc. form.The known exposure that non-visible area carries out on base material/development/etch process is that transparency conducting layer is made into to the tin indium oxide automatically controlled circuit, the present invention further carries out reducing the subsequent method step of automatically controlled circuit sheet resistance value, in brief, the present invention is additional to nickel and gold material on the tin indium oxide automatically controlled circuit, and make this tin indium oxide automatically controlled circuit form a kind of low-impedance electronic control circuit, and can be by 100 original Ω/cm
2to 500 Ω/cm
2sheet resistance value be down to approximately 0.3 Ω/cm
2below.
At first referring to Fig. 1, is the automatically controlled circuit schematic diagram on the transparent conductive panel of general contact panel.Transparent conductive panel shown in Fig. 1 is to be wherein one one in two transparent conductive panels up and down in contact panel, the transparent conductive panel of another one is except base material possibility difference, all be formed with the transparency conducting layer of tin indium oxide on base material, the present invention is the example making situation of a transparent conductive panel wherein only, another one the making situation identical.In Fig. 1, have transparent conductive panel 100 in contact panel, comprised visible area A and invisible range B on it, automatically controlled circuit 101 forms in invisible range B, and the voltage signal touch-control action produced by signal winding displacement 103 passes.Transparent conductive panel 100 comprises base material and is coated in the transparency conducting layer of this base material, base material can be rigid glass substrate or soft flexible base plate or the base material of other character, and base material and transparency conducting layer overlap, the visible area A in graphic adds that invisible range B is the structure after it is superimposed together.
The present invention first completes the making of tin indium oxide automatically controlled circuit on base material with known circuit manufacturing technology, afterwards, then carry out the manufacture method of low-impedance electronic control circuit of the present invention.
Then referring to Fig. 2, is the manufacture method schema of the anti-automatically controlled circuit of embodiment of the present invention medium or low resistance.Comprise seven steps in graphic, wherein step S10～S40 is a kind of example in tin indium oxide automatically controlled circuit making step.For example: step S10 is positive and negative flow process, be coated with and be in the layout of in advance on transparency conducting layer with the automatically controlled circuit cabling by required through the printing of step S20 again, step S30 can carry out blanket exposure afterwards, and development/etching of last step S40/striping can complete whole tin indium oxide automatically controlled circuits and make.
After completing aforesaid step, then can reduce further the surface resistivity of automatically controlled circuit after the following step method proposed by the present invention.Wherein, aforesaid step is only a kind of example, and any other can complete the tin indium oxide automatically controlled circuit and make all applicable the present invention.
The visible area that then carries out step S50 covers step; it is for by the visible area covered with protective film and expose the tin indium oxide automatically controlled circuit of invisible range; thicken wire without electrolytic nickel gold step for subsequent chemistry on this tin indium oxide automatically controlled circuit, reach the effect that reduces sheet resistance value.
Then carry out the pre-treatment step of step S60, using and utilize the catalyzer of metallic palladium material as the chemical nickel reaction.
Then carry out the chemistry of step S70 without electrolytic nickel plating step (electro1ess nickel plating), it is without the electrolytic nickel displacement step, soaks this transparent conductive panel, and nickel metal layer is deposited on this tin indium oxide automatically controlled circuit.In an embodiment, be deposition at least 0.8 micron but be no more than the nickel metal layer of 2 microns on this tin indium oxide automatically controlled circuit, be preferably 0.9 to 1.5 micron of deposition, for example: 1 micron.
Then carry out the chemical replacement gold plating step (immersion Au plating) of step S80, it,, for soaking golden displacement step, soaks this transparent conductive panel, so that the gold layer is deposited on this nickel metal layer.In an embodiment, be to deposit the gold layer of at least 0.01 micron on this nickel metal layer, be preferably 0.010 to 0.025 micron, for example can be 0.015 micron.
Gold-plated step is reduced in the displacement of then carrying out step S90, and it is a kind of thick gold-plated step, is used to the upper plated with gold supplemental layers of the formed gold layer of step S80, to add the integral thickness of thick gold membrane.In an embodiment, be to deposit the golden supplemental layers of at least 0.08 micron on this gold layer, be preferably 0.08 to 0.12 micron, for example can be 0.10 micron.
Finally carry out the striping step of step S100, for removing step S50, be covered in the protective membrane on visible area, to expose whole automatically controlled circuit figures.Can carry out the rear processing procedure of contact panel after step S100, it is known techniques, in this, repeats no more.
Wherein, step S50 can utilize diverse ways to form this protective membrane on visible area, for example, shown in Fig. 3, is the schema of covering step of the completing steps S50 of three kinds of different embodiment.The A method, for the peelable glue printing through step S511, is printed on visible area with the glue material by peelable formula, then through the baking-curing of step S512, glue material is solidified into to this protective membrane.The B method, for the photo-resist printing through step S521, so that photo-induced corrosion resistant material is printed on visible area, then is solidified through the UV of step S522, photo-induced corrosion resistant material is solidified into to this protective membrane.The C method is the photo-resist press mold through step S531 or photo-resist coating; photo-induced corrosion resistant material is formed on visible area and invisible range; again through the exposure of step S532; so that the exposure of the photo-induced corrosion resistant material on visible area is configured as this protective membrane; finally by the development of crossing step S533; to peel off the photo-induced corrosion resistant material on invisible range, to manifest the tin indium oxide automatically controlled circuit in invisible range.Aforesaid three kinds of methods are only a kind of example, and any other can form the neither category that leaves the present invention of other equivalent method of protective membrane on visible area.
Can consult Fig. 4 as for aforesaid step S60, it is the method flow diagram of palladium activation step in the embodiment of the present invention.The step of S601～S604 that it comprises the following stated:
At first being cleaned (cleaning) step S601, is defatting step, can utilize the cleaning liquor of acidity or alkalescence to carry out the clean of transparent conductive panel.
Then carry out modified (conditioning) step S602, it makes it be easy to the metallic palladium material of adhesion of subsequent for adjusting transparency conducting layer.
Then carry out catalysis (activating) step S603, soak this transparent conductive panel, make the metallic palladium material can be attached on this tin indium oxide automatically controlled circuit and on this base material of non-visible area.
Then carry out catalysis aftertreatment (post-activating) step S604, retain the metallic palladium material on this tin indium oxide automatically controlled circuit, remove the metallic palladium material of rest part, this step is to carry out ionising treatment with chemical agent.
After aforesaid S10～S100 step, can sequentially form nickel metal layer, gold layer, golden supplemental layers on original tin indium oxide automatically controlled circuit surface, and then can make sheet resistance value be down to approximately 0.3 Ω/cm
2under, make the touch-control signal be difficult for loss, distortion and distortion, and then increase the monolithic stability degree of contact panel.
The enforcement example that below will implement for example aforesaid method is done example:
At first do the explanation of conformability with table one:
Table one
In cleaning step S601, can adopt acid clean liquid, for example: utilize the sulphuric acid soln 100 (milliliter/liter) of Melplate PC-6122 to clean this transparent conductive panel 4 to 6 minutes (for example: can be the round values of 4 to 6), this sulphuric acid soln comprises: the water that the tranquilizer that the sulfuric acid that weight percent is 13% (sulfuric acid), weight percent are 10%～20% and weight percent are 70%～80%.
In modified step S602, can for example adopt simultaneously: the solution 20 (grams per liter) of Melplate 480A and the solution 200 of Melplate 480B (milliliter/liter) this transparent conductive panel together soaked 3 to 6 minutes (for example: can be the round values of 3 to 6).Wherein, this 480A solution comprises: the Potassium Persulphate (di-potassium peroxodisulfate) that the sal enixum that weight percent is 20%～30% (potassium hydrogen sulfate), weight percent are 2%, the inorganic acid salt (inorganic acid salt) that weight percent is 70%～80%; This 480B solution comprises: weight percent is about 1.3% ammonium bifluoride (ammonium hydrogen fluoride), the organic acid (Organic acid) that weight percent is 40%～50%, the water that weight percent is 50%～60%.
In catalytic step S603, can for example adopt: equivalent concentration is about the potassium hydroxide solution 1.5 (milliliter/liter) of 0.1N simultaneously, and the solution 30 of Melplate 7331 (milliliter/liter) this transparent conductive panel together soaked 3 to 6 minutes (for example: can be the round values of 3 to 6).Wherein, this 7331 solution comprises: weight percent be about 1% or less Palladous chloride (palladium dichloride), tranquilizer, weight percent that weight percent is 1%～10% be about 90% or less water.
In catalysis post-processing step S604, for example can adopt: the solution 10 of Melplate 7340 (milliliter/liter) this transparent conductive panel soaked 3 to 6 minutes (for example: can be the round values of 3 to 6).Wherein, this 7340 solution comprises: the water that the phosphoric acid that weight percent is 45% to 55% (phosphinic acid), weight percent are 45% to 55%.
Chemistry without electrolytic nickel plating step S70 in, can for example adopt: the solution 140 of Melplate NI-8670M1 (milliliter/liter) for example, together soaks this transparent conductive panel 12 to 18 minutes (for example: can be the round values of 12 to 18) with the solution 140 (milliliter/liter) (: can be the integer temperature value between 70 ℃ to 80 ℃) at the temperature of 70 ℃ to 80 ℃ of Melplate NI-8670M2 simultaneously.Wherein, this NI-8670M1 solution comprises: weight percent is about 20% single nickel salt (Nickel Sulfate), weight percent and is about 1% or less tranquilizer, the water that weight percent is 75%～85%; This NI-8670M2 solution comprises: the hypophosphate that weight percent is 10%～20% (hypophosphoric acid salt), weight percent are about 10%～20% tranquilizer, the water that weight percent is 65%～75%.
In chemical replacement gold plating step S80, can for example adopt simultaneously: potassium cyanaurite (Potassium gold cyanide) 2.9 (grams per liters), Melplate AU-6601MA solution 100 (milliliter/liter) and AU-6601MB solution 100 (milliliter/liter) this transparent conductive panel together soaked 0.5 to 2.0 minute (for example: can be the integer number of seconds value between 30 seconds to 120 seconds).Wherein, this AU-6601MA solution comprises: weight percent is about 10%～20% stablizer, the water that weight percent is 80%～90%; This AU-6601MB solution comprises: weight percent is about 30%～40% stablizer, the water that weight percent is 60%～70%.
In the gold-plated step S90 of displacement reduction, can for example adopt: potassium cyanaurite (Potassium gold cyanide) 2.9 (grams per liters), potassium cyanide (Potassium cyanide) 1.0 (grams per liters), Melplate AU-6691A solution 100 (milliliter/liter), Melplate AU-6691B solution 200 (milliliter/liter), MelplateAU-6691C solution 200 (milliliter/liter), with AU-6691D solution 10 (milliliter/liter), (for example: the round values of 9 to 11 minutes) together soak this transparent conductive panel 9 to 11 minutes simultaneously.Wherein, this AU-6691A solution comprises: weight percent is about 10%～20% stablizer, the water that weight percent is 80%～90%; This AU-6691B solution comprises: weight percent is about 20%～30% stablizer, the water that weight percent is 70%～80%; This AU-6691C solution comprises: weight percent is about 10%～20% inorganic salt (Inorganic salt), the water that weight percent is 80%～90%; This AU-6691D solution comprises: the stablizer that weight percent is 100%.In this step, be that the gold in the aurous cyanide potassium solution is reduced on the gold layer.
Accordingly, low-impedance electronic control circuit structure provided by the invention, it can upwards sequentially have tin indium oxide automatically controlled circuit layer 101 in this base material 1001 (referring to Fig. 5), 0.9 to the nickel metal layers of 1.5 microns 105, for example, 0.010 (can be 0.011 to 0.025 micron, 0.012, 0.013, 0.014, 0.015, 0.016, 0.017, 0.018, 0.019, 0.020, 0.021, 0.022, 0.023, 0.024 gold layer 107 micron), reach 0.08 to 0.12 micron and (for example can be the A/1000 micron, the integer numerical value that A is 80～120) golden supplemental layers 109, said structure can be looked by the sectional view according under I-I ' line segment of Fig. 1 of Fig. 5, wherein this transparent conductive panel 100 comprises base material 1001 and transparency conducting layer 1002, and these three tin indium oxide automatically controlled circuit layers 101 are to obtain by the former transparency conducting layer 1002 of etching.
In sum, this case utilizes the low-impedance electronic control circuit structure of special coating and has carried out a kind of manufacture method of low-impedance electronic control circuit, the live width of this circuit is controlled and can more be become more meticulous compared to known techniques, and also can effectively reduce cost of manufacture, and the low-impedance electronic control circuit structure of producing can increase the accurate location rate of this contact panel point of contact and have the lower loss of signal.
The present invention discloses with preferred embodiment hereinbefore, so has the knack of the technology person and it should be understood that this embodiment is only for describing the present invention, and should not be read as and limit the scope of the invention.It should be noted, such as, with variation and the displacement of this embodiment equivalence, all should be made as in the category that is covered by the present invention.Therefore, protection scope of the present invention is when being as the criterion with claims.
Claims (14)
1. the low-impedance electronic control circuit manufacture method of a contact panel, the transparent conductive panel in this contact panel comprises base material and is formed at the tin indium oxide automatically controlled circuit on this base material, it is characterized in that, and the method comprises:
Visible area covers step, is with this base material of protective membrane cover part, to expose this tin indium oxide automatically controlled circuit;
Pre-treatment step is to form palladium catalyst on this tin indium oxide automatically controlled circuit;
Chemistry, without electrolytic nickel plating step, is that nickel metal layer is deposited on this tin indium oxide automatically controlled circuit;
Chemical replacement gold plating step is that the gold layer is deposited on this nickel metal layer; And
The gold-plated step of displacement reduction, be that golden supplemental layers is deposited on this gold layer,
Wherein, this nickel metal layer is without thermal anneal process.
2. method according to claim 1, is characterized in that, this chemistry without electrolytic nickel plating step in, be the deposition nickel metal layer of 0.9 to 1.5 micron on this tin indium oxide automatically controlled circuit.
3. method according to claim 2, is characterized in that, this chemistry without electrolytic nickel plating step in, be this transparent conductive panel to be soaked at the temperature of 70 ℃ to 80 ℃ in acidic solution to 12 to 18 minutes.
4. method according to claim 1, is characterized in that, in this chemical replacement gold plating step, is to deposit this gold layer of 0.08 to 0.13 micron on this nickel metal layer.
5. method according to claim 4, is characterized in that, in this chemical replacement gold plating step, is this transparent conductive panel to be soaked at the temperature of 85 ℃ to 95 ℃ in acidic solution to 0.5 to 2 minute.
6. method according to claim 1, is characterized in that, in the gold-plated step of this displacement reduction, is to deposit this gold supplemental layers of 0.08 to 0.12 micron on this gold layer.
7. method according to claim 6, is characterized in that, in the gold-plated step of this displacement reduction, is this transparent conductive panel to be soaked at the temperature of 80 ℃ to 90 ℃ in acidic solution to 9 to 11 minutes.
8. according to the described method of any one in claim 1 to 6, it is characterized in that, this pre-treatment step further comprises following steps:
Cleaning step, clean this transparent conductive panel;
Modified step, make on this transparent conductive panel to be easy to the adhesion palladium metallic substance;
Catalytic step, soak this transparent conductive panel, makes the metallic palladium material be attached on this base material partly and be attached on this tin indium oxide automatically controlled circuit; And
The catalysis post-processing step, retain the metallic palladium material on this tin indium oxide automatically controlled circuit, removes the metallic palladium material of rest part.
9. method according to claim 8, is characterized in that, this cleaning step carries out 4 to 6 minutes, and this modified step is carried out 3 to 6 minutes, and this catalytic step carries out 3 to 6 minutes, and this catalysis post-processing step carries out 3 to 6 minutes.
10. the low-impedance electronic control circuit of a contact panel, is characterized in that, it is that use is made according to the described method of any one in claim 1 to 9.
11. the low-impedance electronic control circuit of a contact panel, the transparent conductive panel in this contact panel comprises base material, it is characterized in that:
This low-impedance electronic control circuit upwards sequentially includes tin indium oxide automatically controlled circuit layer, the nickel metal layer of 0.9 to 1.5 micron, gold layer, and the golden supplemental layers of 0.08 to 0.12 micron of 0.010 to 0.025 micron from this base material.
12. low-impedance electronic control circuit according to claim 11, is characterized in that, the thickness of this nickel metal layer is 1 micron.
13. according to the described low-impedance electronic control circuit of claim 11 or 12, it is characterized in that, the thickness of this gold supplemental layers is 0.1 micron.
14. low-impedance electronic control circuit according to claim 13, is characterized in that, the thickness of this gold layer is 0.015 micron.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109158590A (en) * | 2018-09-29 | 2019-01-08 | 淮阴师范学院 | The preparation method of the compound bronze of one-dimensional rod-like core-shell structure |
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| CN101845625A (en) * | 2010-06-01 | 2010-09-29 | 无锡阿尔法电子科技有限公司 | Method for chemically plating gold on surface of capacitive touch screen |
| CN102207806A (en) * | 2011-05-31 | 2011-10-05 | 无锡阿尔法电子科技有限公司 | Method for uniformly and chemically gold-plating ITO wiring on capacitive touch screen |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20050260388A1 (en) * | 2004-05-21 | 2005-11-24 | Lai Shui T | Apparatus and method of fabricating an ophthalmic lens for wavefront correction using spatially localized curing of photo-polymerization materials |
| CN101706703A (en) * | 2009-11-24 | 2010-05-12 | 无锡阿尔法电子科技有限公司 | Manufacturing method of metal film on periphery of capacitive touch screen |
| CN101845625A (en) * | 2010-06-01 | 2010-09-29 | 无锡阿尔法电子科技有限公司 | Method for chemically plating gold on surface of capacitive touch screen |
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| CN109158590A (en) * | 2018-09-29 | 2019-01-08 | 淮阴师范学院 | The preparation method of the compound bronze of one-dimensional rod-like core-shell structure |
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Application publication date: 20130605 |