CN102455807A - Low-impedance electrically-controlled line for touch panel, and manufacturing method for low-impedance electrically-controlled line - Google Patents
Low-impedance electrically-controlled line for touch panel, and manufacturing method for low-impedance electrically-controlled line Download PDFInfo
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- CN102455807A CN102455807A CN2010105180695A CN201010518069A CN102455807A CN 102455807 A CN102455807 A CN 102455807A CN 2010105180695 A CN2010105180695 A CN 2010105180695A CN 201010518069 A CN201010518069 A CN 201010518069A CN 102455807 A CN102455807 A CN 102455807A
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- controlled circuit
- indium oxide
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Abstract
The invention discloses a low-impedance electrically-controlled line for a touch panel, and a manufacturing method for the low-impedance electrically-controlled line. The following sequential steps are performed on an indium tin oxide electrically-controlled line: covering a visible region, preprocessing, chemically electroplating electroless nickel, thermally annealing and chemically electroplating replacement gold. By using the steps of chemically electroplating the electroless nickel and chemically electroplating the replacement gold, the indium tin oxide electrically-controlled line is thickened, so that a low-impedance electrically-controlled line structure with a special coating thickness is manufactured; therefore, the resistance value of the surface is reduced, so a touch signal is difficult to lose, deform and distort; furthermore, the indium tin oxide electrically-controlled line for reducing the impedance value is refined; the surface of the indium tin oxide electrically-controlled line can not be oxidized easily to influence a combined attachment surface in the subsequent steps; and moreover, by the method for manufacturing the structure, the manufacturing cost can be lowered.
Description
Technical field
The present invention is about a kind of structure and manufacturing approach thereof of contact panel, more particularly about in the contact panel, is used for reducing a kind of Low ESR automatically controlled circuit structure and the manufacturing approach thereof of the automatically controlled circuit impedance that the ITO transparency conducting layer forms.
Background technology
Evolution along with touch technology; The touch man-machine interface, as: contact panel (Touch Panel) has been widely used to electronic product miscellaneous; Be used to replace traditional input media (as: keyboard and mouse etc.), make things convenient for the user to control and browsing data.
Contact panel (Touch Panel) generally can be divided into soft and rigid panel; A kind of rigid panel utilizes glass substrate and transparency conducting layer formed thereon to form the transparent conductive panel of bottom; The transparent conductive panel on top then is a transparent conductive film; Be used for the automatically controlled circuit of control operation action lay respectively at the top and the bottom transparent conductive panel around, relend by winding displacement and control IC and supply the user to operate with touch control manner.Contact panel can be divided into according to the manner of execution difference: resistance-type, condenser type, acoustic wave, optical guided wave formula, loading varying type etc.Soft panel light-permeable PET then capable of using plastic base, transparency conducting layer and transparent conductive film come to form respectively the transparent conductive panel of top and the bottom.
Traditionally; Earlier through exposure/development/etch process to the transparency conducting layer on the base material; Formation is positioned at the automatically controlled circuit around the base material, yet the sheet resistance value that these automatically controlled circuits produce is greatly about between 100 Ω/cm2 to 500 Ω/cm2; In order further to reduce this high impedance value; Usually can for example utilize again: elargol print process, molybdenum/aluminium/molybdenum sputtering method, and copper platings/sputtering method etc. increase layer thickening method and on the automatically controlled circuit that transparency conducting layer forms, form a kind of Low ESR automatically controlled circuit layer that is used for reducing the automatically controlled circuit impedance more, cause the cost raising yet known these production method processing procedure complicacies and equipment needed thereby are various, in addition; These production methods have the making limit on the live width spacing; Day also the circuit live width of micro cause the lifting of make going up degree of difficulty and the reduction of yield, this be so etc. under the production method, impedance inequality, broken string take place or situation about being short-circuited etc. with adjacent lines in circuit easily.
Summary of the invention
One of the present invention purpose is to propose a kind of Low ESR automatically controlled circuit manufacturing approach of contact panel, and the structure that a kind of Low ESR automatically controlled circuit is provided, and this structure can improve the degree of accuracy of contact panel sense and can reach meticulous circuit requirements of making.
Another object of the present invention is to use the structure of aforementioned Low ESR automatically controlled circuit, its production method is able to simple and easy and precision.
For reaching above-mentioned purpose and other purpose; In the Low ESR automatically controlled circuit manufacturing approach of contact panel of the present invention; Transparent conductive panel in this contact panel comprises a base material and is formed at the tin indium oxide automatically controlled circuit on this base material; This method comprises: visible area covers step, with this base material of diaphragm cover part to expose this tin indium oxide automatically controlled circuit; Pre-treatment step forms the palladium catalyst on this tin indium oxide automatically controlled circuit; The no electrolytic nickel plating step of chemistry is deposited on this tin indium oxide automatically controlled circuit nickel metal layer; Thermal anneal step; Chemical replacement gold plating step is deposited on this nickel metal layer the gold layer; And the striping step, remove this diaphragm.
Under various embodiment; Do not have in the electrolytic nickel plating step in chemistry; Can on this tin indium oxide automatically controlled circuit, deposit at least 0.4 micron nickel metal layer, moreover it can be soaked in this transparent conductive panel in the acid solution 5 to 10 minutes under 60 ℃ to 70 ℃ temperature; In thermal anneal step, can under 120 ℃ to 140 ℃ temperature, implement at least 50 minutes; Can be in chemical replacement gold plating step, the gold layer of 0.010 to 0.025 micron of deposition on this nickel metal layer, moreover, in chemical replacement gold plating step, can this transparent conductive panel be soaked in the acid solution 1 to 5 minute; In view of the above, this Low ESR automatically controlled circuit of made completion only has 3 ohm every square centimeter sheet resistance value.
Before the present invention, among the embodiment of treatment step, more can comprise following steps: cleaning step, modified step, catalyst step, speedization step; Wherein, this cleaning step can carry out 4 to 6 minutes, and this modified step can be carried out 5 to 10 minutes, and this catalyst step can be carried out 2 to 5 minutes, and this speed step can be carried out 2 to 5 minutes.
In the embodiment of Low ESR automatically controlled circuit of the present invention, its structure comprises: this Low ESR automatically controlled circuit upwards includes a tin indium oxide automatically controlled circuit layer, a nickel metal layer of at least 0.4 micron and a gold medal layer of 0.010 to 0.025 micron in regular turn from this base material; Wherein, the thickness of this nickel metal layer can be 0.5 micron, and thickness that should the gold layer can be 0.015 micron.
By at covered with protective film on optical glass or the blooming so that on the tin indium oxide automatically controlled circuit surface of periphery, do not form nickel metal layer, gold layer in regular turn; And then can make its sheet resistance value reduce to about 3 Ω/cm2; Make the touch-control signal be difficult for loss, distortion and distortion, and then increase the monolithic stability degree of contact panel, and adopt the method; Be used for reducing resistance value and additional automatically controlled circuit layer is able to become more meticulous; Its surface also is difficult for producing oxidation and has influence on the binding face that in subsequent step, makes up, moreover the production method of these structures more can lower whole cost of manufacture.
Description of drawings
Fig. 1 is the automatically controlled circuit synoptic diagram on the transparent conductive panel of general contact panel.
Fig. 2 is the manufacturing approach process flow diagram of the anti-automatically controlled circuit of one embodiment of the invention medium or low resistance.
Fig. 3 is three kinds of process flow diagrams of accomplishing the different embodiment of the covering step of step S50 among Fig. 2.
Fig. 4 is the manufacturing approach process flow diagram of the no electrolysis processing procedure of chemistry in one embodiment of the invention.
Fig. 5 is according to the sectional view under I-I ' line segment of figure.
[primary clustering symbol description]
100 transparent conductive panels
1001 base materials
1002 transparency conducting layers
101 tin indium oxide automatically controlled circuits
103 signal winding displacements
105 nickel metal layers
107 gold medal layers
The A visible area
The B invisible range
I-I ' line segment
S10～S100 step
Embodiment
For fully understanding the object of the invention, characteristic and effect, now by following concrete embodiment, and cooperate appended graphicly, the present invention is done a detailed description, explain as afterwards:
The present invention's additional Low ESR circuit layer on original automatically controlled circuit is different from the Low ESR circuit layer that elargol print process, molybdenum/aluminium/molybdenum sputtering method and copper plating sputtering method etc. form.Be known in exposure/development/etch process that non-visible area carries out on the base material transparency conducting layer is made into the tin indium oxide automatically controlled circuit; The present invention further carries out in order to reduce the subsequent method step of automatically controlled circuit sheet resistance value; In brief; The present invention is additional to nickel and gold material on the tin indium oxide automatically controlled circuit, and makes this tin indium oxide automatically controlled circuit form a kind of Low ESR automatically controlled circuit, and can be with original 100 Ω/cm
2To 500 Ω/cm
2Sheet resistance value reduce to about 3 Ω/cm
2
At first see also Fig. 1, the automatically controlled circuit synoptic diagram on the transparent conductive panel of general contact panel.Transparent conductive panel shown in Figure 1 is wherein an one in two transparent conductive panels up and down in the contact panel; The transparent conductive panel of another one is except base material possibility difference; On base material, all be formed with the transparency conducting layer of tin indium oxide; The present invention is the example making situation of a transparent conductive panel wherein only, and the making situation of another one is identical.Among Fig. 1, have a transparent conductive panel 100 in the contact panel, comprised visible area A and invisible range B on it, automatically controlled circuit 101 forms in the invisible range B, and through signal winding displacement 103 voltage signal that the touch-control action is produced is passed.Transparent conductive panel 100 comprises a base material and is coated in one of this base material transparency conducting layer; Base material can be rigid glass substrate or the soft flexible base plate or the base material of other character; And base material and transparency conducting layer overlap, and the visible area A in graphic adds its structure after coinciding together of invisible range B.
The present invention accomplishes the making of tin indium oxide automatically controlled circuit on the base material earlier with known circuit manufacturing technology, after, carry out the manufacturing approach of Low ESR automatically controlled circuit of the present invention again.
Then see also Fig. 2, the manufacturing approach process flow diagram of the anti-automatically controlled circuit of one embodiment of the invention medium or low resistance.Comprise seven steps in graphic, wherein step S10～S40 is a kind of example in the tin indium oxide automatically controlled circuit making step.For example: step S10 is a positive and negative flow process; Printing through step S20 is coated with to be in the layout of required automatically controlled circuit cabling on the transparency conducting layer in advance again; Step S30 can carry out blanket exposure afterwards, and development/etching of last step S40/striping promptly can be accomplished whole tin indium oxide automatically controlled circuits and make.
After accomplishing aforesaid step, after the following step method that proposes by the present invention, can reduce the surface resistance of automatically controlled circuit more further.Wherein, aforesaid step is merely a kind of example, and any other can be accomplished the tin indium oxide automatically controlled circuit and make all applicable the present invention.
The visible area that then carries out step S50 covers step; It is used for tin indium oxide automatically controlled circuit that visible area is covered a diaphragm and exposes invisible range; Do not have electrolytic nickel gold processing procedure for subsequent chemistry and on this tin indium oxide automatically controlled circuit, thicken lead, reach the effect that reduces sheet resistance value.
Then carry out step S60 treatment step before, to utilize the catalyst of palladium metal material as the chemical nickel reaction.
The chemistry that then carries out step S70 does not have electrolytic nickel plating step (electroless nickel plating), and it is a no electrolytic nickel displacement step, soaks this transparent conductive panel, and nickel metal layer is deposited on this tin indium oxide automatically controlled circuit.In embodiment, on this tin indium oxide automatically controlled circuit, deposit at least 0.4 micron nickel metal layer, 0.5 micron of preferable deposition.
Then carry out the thermal anneal step of step S80, it can make the nickel stack layer more closely be attached on this tin indium oxide automatically controlled circuit, and it can reduce impedance.In a preferred embodiment, under 120 ℃ to 140 ℃ temperature, implement at least 50～65 minutes (for example: can be 50 to 65 round values), best 130 ℃ of enforcements down.
Then carry out the chemical replacement gold plating step (immersion Au plating) of step S90, it is the golden displacement step of an immersion, soaks this transparent conductive panel, so that the gold layer is deposited on this nickel metal layer.In an embodiment, on this nickel metal layer, deposit at least 0.01 micron gold layer, be preferably 0.010 to 0.025 micron, for example can be 0.015 micron.
Carry out the striping step of step S100 at last, be used for removing step S50 and be covered in the diaphragm on the visible area, to expose whole automatically controlled circuit figures.After step S100, can carry out the back processing procedure of contact panel, it is a known technology, promptly repeats no more in this.
Wherein, step S50 diverse ways capable of using forms this diaphragm on visible area, for example Fig. 3 shown in, the process flow diagram of the covering step of the completing steps S50 of three kinds of different embodiment.The A method is printed on the visible area with the glue material with a peelable formula for the peelable glue printing through step S511, again through the baking-curing of step S512, glue material is solidified into this diaphragm.The B method is for the photoresistance printing through step S521, and so that photoresist is printed on the visible area, the UV through step S522 solidifies again, photoresist is solidified into this diaphragm.The C method then is photoresistance press mold or photoresistance coating through step S531; Photoresist is formed on visible area and the invisible range; Through the exposure of step S532,, pass through the development of step S533 at last again so that the exposure of the photoresist on the visible area is configured as this diaphragm; To peel off the photoresist on the invisible range, to manifest the tin indium oxide automatically controlled circuit in the invisible range.Aforesaid three kinds of methods are merely a kind of example, appoint to close that other other equivalent method that can on visible area, form diaphragm is neither to leave category of the present invention.
Then can consult Fig. 4 as for aforesaid step S60, the method flow diagram of palladium activation step in one embodiment of the invention.It comprises the step of the S601～S604 of the following stated:
At first cleaning (cleaning) step S601, is a defatting step, and the cleaning solution of acidity capable of using or alkalescence carries out the cleaning of transparent conductive panel.
Then carry out modified (conditioning) step S602, it is used to adjust transparency conducting layer, makes it be easy to the palladium metal material of adhesion of subsequent.
Then carry out catalyst (activating) step S603, soak this transparent conductive panel, make the palladium metal material can be attached on this tin indium oxide automatically controlled circuit and on this base material of non-visible area.
Then carry out speedization (post-activating) step S604, keep the palladium metal material on this tin indium oxide automatically controlled circuit, remove the palladium metal material of remainder, this step is carried out ionize process with chemical agent.
Through after aforesaid S10～S100 step, promptly can form nickel metal layer, gold layer on original tin indium oxide automatically controlled circuit surface in regular turn, and then can make sheet resistance value reduce to about 3 Ω/cm
2, make the touch-control signal be difficult for loss, distortion and distortion, and then increase the monolithic stability degree of contact panel.
The enforcement example that below will implement said method is for example done example:
At first do the explanation of conformability with table one:
Table one
In cleaning step S601; Can adopt acid clean liquid; For example: utilize the sulfuric acid solution 100 (milliliter/liter) of Melplate PC-6122 to clean this transparent conductive panel 4 to 6 minutes (for example: can be 1 to 2 round values), this sulfuric acid solution comprises: percentage by weight is that 13% sulfuric acid (sulfuric acid), percentage by weight are that 10%～20% stabilization agent and percentage by weight are 70%～80% water.
In modified step S602, can for example adopt simultaneously: the solution 20 (grams per liter) of Melplate 480A and the solution 200 of Melplate 480B (milliliter/liter) this transparent conductive panel together soaked 5 to 10 minutes (for example: can be 5 to 10 round values).Wherein, This 480A solution comprises: percentage by weight be 20%～30% potassium acid sulfate (potassium hydrogen), percentage by weight be 2% POTASSIUM PERSULFATE (di-potassium peroxodisulfate), percentage by weight be 70%～80% inorganic acid salt (inorganic acid, salt); This 480B solution then comprises: it is that 40%～50% organic acid (Organic acid), percentage by weight are 50%～60% water that percentage by weight is about 1.3% ammonium bifluoride (ammonium hydrogen fluoride), percentage by weight.
In catalyst step S603; Can for example adopt simultaneously: equivalent not ear concentration is about the potassium hydroxide solution 1.5 (milliliter/liter) of 0.1N, and the solution 30 of Melplate 7331 (milliliter/liter) this transparent conductive panel together soaked 2 to 5 minutes (for example: can be 2 to 5 round values).Wherein, this 7331 solution comprises: percentage by weight be about 1% or littler palladium bichloride (palladium dichloride), percentage by weight be that 1%～10% stabilization agent, percentage by weight are about 90% or littler water.
In speed step S604, for example can adopt: the solution 10 of Melplate 7340 (milliliter/liter) this transparent conductive panel soaked 2 to 5 minutes (for example: can be 2 to 5 round values).Wherein, this 7340 solution comprises: percentage by weight is that 45% to 55% phosphoric acid (phosphinic acid), percentage by weight are 45% to 55% water.
Do not have among the electrolytic nickel plating step S70 in chemistry, can for example adopt simultaneously: the solution 120 of the solution 60 of Melplate NI-867M1 (milliliter/liter) and Melplate NI-867M2 (milliliter/liter) this transparent conductive panel together soaked 5 to 10 minutes (for example: can be 5 to 10 round values) in (for example: can be the integer temperature value between 60 ℃ to 70 ℃) under 60 ℃ to 70 ℃ the temperature.Wherein, this NI-867M1 solution comprises: percentage by weight be about 20% nickelous sulfate (Nickel Sulfate), percentage by weight be about 1% or littler stabilization agent, percentage by weight be 70%～80% water; This NI-867M2 solution then comprises: percentage by weight be about 0.1% or littler plumbi nitras (lead nitrate), percentage by weight be 10%～20% hypophosphite (hypophosphoric acid, salt), to be about 10% to 20% stabilization agent, percentage by weight be 60%～70% water to percentage by weight.
In chemical replacement gold plating step S90, can for example adopt simultaneously: cyanogen aurification potassium (Potassium gold cyanide) 2.9 (grams per liters), Melplate AU-6601MA solution 100 (milliliter/liter) and AU-6601MB solution 100 (milliliter/liter) this transparent conductive panel together soaked 1 to 5 minute (for example: can be 1 to 5 round values).Wherein, this AU-6601MA solution comprises: it is 80%～90% water that percentage by weight is about 10%～20% stabilizing agent, percentage by weight; This AU-6601MB solution then comprises: it is 60%～70% water that percentage by weight is about 30%～40% stabilizing agent, percentage by weight.
In view of the above; Low ESR automatically controlled circuit structure provided by the invention; It can upwards have nickel metal layer 105, and the gold layer 107 of 0.010 to 0.025 micron (for example can be 0.011,0.012,0.013,0.014,0.015,0.016,0.017,0.018,0.019,0.020,0.021,0.022,0.023,0.024 micron) of 101, at least 0.4 micron on tin indium oxide automatically controlled circuit layer in regular turn in this base material 1001 (seeing also figure); Said structure can be by looking according to the sectional view of figure under I-I ' line segment of figure; Wherein this transparent conductive panel 100 comprises base material 1001 and transparency conducting layer 1002, and these three tin indium oxide automatically controlled circuit layers 101 get by the former transparency conducting layer 1002 of etching.
In sum; This case utilizes the Low ESR automatically controlled circuit structure of special coating and has carried out a kind of manufacturing approach of Low ESR automatically controlled circuit; The live width control box of this circuit can become more meticulous in known technology more; And also can reduce cost of manufacture effectively, and the Low ESR automatically controlled circuit structure of producing can increase the accurate location rate of this contact panel contact point and have the lower loss of signal.
The present invention is open with preferred embodiment hereinbefore, it will be understood by those skilled in the art that so this embodiment only is used to describe the present invention, and should not be read as restriction scope of the present invention.It should be noted,, all should be made as and be covered by in the category of the present invention such as with the variation and the displacement of this embodiment equivalence.Therefore, protection scope of the present invention when with claims the person of being defined be as the criterion.
Claims (13)
1. the transparent conductive panel in the Low ESR automatically controlled circuit manufacturing approach of a contact panel, this contact panel comprises a base material and is formed at the tin indium oxide automatically controlled circuit on this base material, it is characterized in that this method comprises:
Visible area covers step, with this base material of diaphragm cover part to expose this tin indium oxide automatically controlled circuit;
Pre-treatment step forms the palladium catalyst on this tin indium oxide automatically controlled circuit;
The no electrolytic nickel plating step of chemistry is deposited on this tin indium oxide automatically controlled circuit nickel metal layer;
Thermal anneal step;
Chemical replacement gold plating step is deposited on this nickel metal layer the gold layer; And
The striping step removes this diaphragm.
2. the method for claim 1 is characterized in that,, do not have in the electrolytic nickel plating step in chemistry, on this tin indium oxide automatically controlled circuit, deposit at least 0.4 micron nickel metal layer.
3. method as claimed in claim 2 is characterized in that,, do not have in the electrolytic nickel plating step in chemistry, this transparent conductive panel was soaked under 60 ℃ to 70 ℃ temperature in the acid solution 5 to 10 minutes.
4. the method for claim 1 is characterized in that,, in thermal anneal step, under 120 ℃ to 140 ℃ temperature, implemented at least 50 minutes.
5. the method for claim 1 is characterized in that,, in chemical replacement gold plating step, on this nickel metal layer, deposit 0.010 to 0.025 micron gold layer.
6. method as claimed in claim 5 is characterized in that,, in chemical replacement gold plating step, this transparent conductive panel was soaked in the acid solution 1 to 5 minute.
7. like each described method in the claim 1 to 6, it is characterized in that this pre-treatment step more comprises following steps:
Cleaning step cleans this transparent conductive panel;
Modified step makes and is easy to the adhesion palladium metal material on this transparent conductive panel;
The catalyst step is soaked this transparent conductive panel, makes the palladium metal material be attached on this base material partly and is attached on this tin indium oxide automatically controlled circuit; And
The speedization step keeps the palladium metal material on this tin indium oxide automatically controlled circuit, removes the palladium metal material of remainder.
8. method as claimed in claim 7 is characterized in that, this cleaning step carried out 4 to 6 minutes, and this modified step was carried out 5 to 10 minutes, and this catalyst step was carried out 2 to 5 minutes, and this speed step was carried out 2 to 5 minutes.
9. the Low ESR automatically controlled circuit of a contact panel is characterized in that, its use is made like each described method in the claim 1 to 8.
10. Low ESR automatically controlled circuit as claimed in claim 9 is characterized in that, this Low ESR automatically controlled circuit has 3 ohm every square centimeter sheet resistance value.
11. the Low ESR automatically controlled circuit of a contact panel, transparent conductive panel comprises a base material one of in this contact panel, it is characterized in that:
This Low ESR automatically controlled circuit upwards includes a tin indium oxide automatically controlled circuit layer, a nickel metal layer of at least 0.4 micron and a gold medal layer of 0.010 to 0.025 micron in regular turn from this base material.
12. Low ESR automatically controlled circuit as claimed in claim 11 is characterized in that, the thickness of this nickel metal layer is 0.5 micron.
13., it is characterized in that the thickness of this gold layer is 0.015 micron like claim 11 or 12 described Low ESR automatically controlled circuits.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102776495A (en) * | 2012-07-13 | 2012-11-14 | 南京航空航天大学 | Chemical nickel-plating method for capacitive touch screen indium tin oxide (ITO) wiring |
| CN104978059A (en) * | 2014-04-14 | 2015-10-14 | 冠捷投资有限公司 | Manufacturing method of touch control module and touch control module |
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| US20090104440A1 (en) * | 2007-10-22 | 2009-04-23 | Nitto Denko Corporation | Transparent conductive film, method for production thereof and touch panel therewith |
| CN101845625A (en) * | 2010-06-01 | 2010-09-29 | 无锡阿尔法电子科技有限公司 | Method for chemically plating gold on surface of capacitive touch screen |
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| CN101255012A (en) * | 2007-02-27 | 2008-09-03 | 睿明科技股份有限公司 | Device for etching TFT LCD glass substrate and etching method thereof |
| US20090104440A1 (en) * | 2007-10-22 | 2009-04-23 | Nitto Denko Corporation | Transparent conductive film, method for production thereof and touch panel therewith |
| CN101845625A (en) * | 2010-06-01 | 2010-09-29 | 无锡阿尔法电子科技有限公司 | Method for chemically plating gold on surface of capacitive touch screen |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102776495A (en) * | 2012-07-13 | 2012-11-14 | 南京航空航天大学 | Chemical nickel-plating method for capacitive touch screen indium tin oxide (ITO) wiring |
| CN104978059A (en) * | 2014-04-14 | 2015-10-14 | 冠捷投资有限公司 | Manufacturing method of touch control module and touch control module |
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Application publication date: 20120516 |