CN103107258A - Light-emitting diode (LED) structure with wavy side edge - Google Patents
Light-emitting diode (LED) structure with wavy side edge Download PDFInfo
- Publication number
- CN103107258A CN103107258A CN2011103691421A CN201110369142A CN103107258A CN 103107258 A CN103107258 A CN 103107258A CN 2011103691421 A CN2011103691421 A CN 2011103691421A CN 201110369142 A CN201110369142 A CN 201110369142A CN 103107258 A CN103107258 A CN 103107258A
- Authority
- CN
- China
- Prior art keywords
- light
- emitting diode
- wavy
- type semiconductor
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention relates to a light-emitting diode (LED) structure with a wavy side edge. The LED structure can be used in the field of LEDs, such as a common LED, a high-pressure LED and an alternating current LED, a side edge of a light-emitting area is manufactured to a wavy surface with regularity through an etching method, under the condition that the size of the LED is not changed, the wavy regularity structure can reach a big side edge bright dipping area, and light emitting efficiency of the LED can be promoted.
Description
Technical field
The present invention relates to a kind of light emitting diode construction, espespecially a kind of have wavy side to improve the light emitting diode construction of light extraction efficiency.
Background technology
Due to modern age fossil energy deficient gradually, to energy-conserving product demand expanding day, so the technology of light-emitting diode (LED) has significant progress.And under the unsettled condition of oil price, global every country drops into the exploitation of energy-conserving product energetically, and it is product under this trend that light-emitting diode is applied to Electricity-saving lamp bulb.In addition, along with the progress of LED technology, (for example: blue light) application of light-emitting diode is also extensive gradually for white light or other color.Along with the technology of light-emitting diode is increasingly mature, the field of application is also more and more.Light-emitting diode some application in illumination comprise the dwelling house field: wall lamp, night-light (brightness requirement of this part application is not high, is therefore the field of using the earliest LED source), assist illuminator, garden lamp, reading lamp; Facility field: emergency lamp, hospital bed lamp; Field, shop: spotlight, down lamp, bucket lamp, lamp bar; Outdoor field: architectural appearance, Solar lamp; And light show etc.
Light-emitting diode is except the advantage such as low due to power consumption, that not mercurous, the life-span is long, CO2 emissions is low, and the environmental protection policy of global national governments forbidding mercury also orders about research and development and application that the researcher drops into white light emitting diode.When global environmental protection agitation was in the ascendant, the light-emitting diode that is called green light source can meet the main flow trend in the whole world, and as front indication, it has been widely used on 3C Product indicating device and display unit; And the raising of producing again yield along with light-emitting diode, the unit manufacturing cost also significantly reduces, so the demand of light-emitting diode continues to increase.
Brought forward is described, and the light-emitting diode of this moment developing high brightness has become the Research Emphasis of various countries manufacturer, yet still there is defective in current light-emitting diode, makes luminous efficiency can't reach optimum state.
In the past technology, the crystal covering type structure is adopted in once selection or rectilinear electrode structure comes improving luminous efficiency.Because general light-emitting diode is to adopt sapphire substrate is directly sticked packaged type on cup; Yet such packaged type can make light in when output, can be subject to gluing pad and stopping of metal routing and causes luminosity to reduce, and therefore has the crystal covering type of employing structure to improve the defective that light can be blocked.
Also has a kind of improvement mode for using current barrier layer.The sense of current of general light-emitting diode is shortest path, so will make most electric current all inject the zone of P type electrode below.To cause so most light to be gathered in below P type electrode, thereby make the light that produces be stopped and can't export in a large number by P type electrode, and cause optical output power to descend.Therefore, can use current barrier layer (Current Blocking Layer) to improve, the method is to use the mode of etching and chemical vapour deposition (CVD), with insulator deposition in modular construction.Be used for stopping the shortest path, the electric current of light-emitting diode is flowed toward all the other paths, and then the brightness of assembly is promoted.
Yet, those methods are not to do lifting for total lighting area of light-emitting diode, therefore the present invention is directed to light emitting diode construction and do further breakthrough, making the side of light-emitting diode have more greatly to get lighting area, using the luminous efficiency that promotes light-emitting diode.
Summary of the invention
Main purpose of the present invention is to provide a kind of light emitting diode construction with wavy side, and it is that light-emitting zone has wavy edge, and sees through the large lighting area that this wavy edge provides, and can increase light extraction efficiency.
Technical scheme of the present invention is: a kind of light emitting diode construction with wavy side, it is to comprise
One substrate;
One n type semiconductor layer is the top of being located at this substrate;
One luminescent layer is the top of being located at this n type semiconductor layer; And
One p type semiconductor layer is the top of being located at this luminescent layer;
Wherein, the side edge of this luminescent layer and this p type semiconductor layer is wavy.
In the present invention, further comprising a transparency conducting layer, is the top of being located at this p type semiconductor layer.
In the present invention, wherein the side edge of this transparency conducting layer is wavy.
In the present invention, wherein the material of this transparency conducting layer is indium tin oxide.
In the present invention, further comprising an omnidirectional reflector, is the below of being located at substrate.
In the present invention, further comprising a P type electrode, is the top of being located at this p type semiconductor layer.
In the present invention, further comprising a N-type electrode, is the top of being located at this n type semiconductor layer.
The beneficial effect that the present invention has: the present invention discloses a kind of light emitting diode construction with wavy side, and it is to comprise a substrate; One n type semiconductor layer is the top of being located at this substrate; One luminescent layer is the top of being located at this n type semiconductor layer; And a p type semiconductor layer, be the top of being located at this luminescent layer; Wherein, the side edge of this luminescent layer and this p type semiconductor layer is wavy.
Description of drawings
Fig. 1: it is the generalized section of a preferred embodiment of the present invention;
Fig. 2: it is the schematic top plan view of a preferred embodiment of the present invention; And
Fig. 3: it is the generalized section of a preferred embodiment of the present invention.
[figure number is to as directed]
10 substrate 20N type semiconductor layer
30 luminescent layer 40P type semiconductor layer
50P type electrode 60N type electrode
70 wavy side 80 omnidirectional reflectors
90 transparency conducting layers
Embodiment
Further understand and understanding for making architectural feature of the present invention and the effect reached are had, coordinate detailed explanation in order to preferred embodiment and accompanying drawing, be described as follows:
Those light emitting diode constructions in prior art, though once attempted increasing various special aspects, modes such as transparency conducting layer, current blocking layer evenly increases luminous efficiency so that electric current scatters, but those are the adjustment on Current Control, need to solve separately in structural improvement adjustment, therefore the invention provides a kind of structure-improved body that sees through, and then promote the light emitting diode construction of light-emitting diode light extraction efficiency.And this light emitting diode construction is widely used, and except the light-emitting diode on general basis, also is suitable for the fields such as high-voltage LED (HVLED), alternating current of led (ACLED).
At first, please refer to Fig. 1 light emitting diode construction with wavy side of the present invention, it is to comprise a substrate 10; One n type semiconductor layer 20; One luminescent layer 30; An and p type semiconductor layer 40.
Wherein, this n type semiconductor layer 20 is tops of being located at this substrate 10; This luminescent layer 30 is tops of being located at this n type semiconductor layer 20; And this p type semiconductor layer 40 is tops of being located at this luminescent layer 30.
Except said modules, then please refer to Fig. 1, the light emitting diode construction with wavy side of the present invention further comprises a P type electrode 50 and a N-type electrode 60; Wherein, this P type electrode 50 is arranged at this p type semiconductor layer 40 tops, this N-type electrode 60 tops that are arranged at this n type semiconductor layer 20.
In the present invention, key technical feature is wavy structure for the side edge of this luminescent layer 30 and this p type semiconductor layer 40.Please refer to Fig. 2; This p type semiconductor layer 40 visible superstructure when overlooking, its side edge is a wavy side 70, the side edge of the luminescent layer 30 (not seeing in figure) of its below also is this wavy side 70.Because this wavy side 70 is on-plane surface, so the side of this luminescent layer 30 and this p type semiconductor layer 40 is longer than the horizontal edge structure under same linear distance length, therefore has larger lighting area.And due to the lifting of these luminescent layer 30 side areas, therefore can acquire better light extraction efficiency.In addition, seeing through etched technological means, though this made wavy side 70 of this luminescent layer 30 and this p type semiconductor layer 40 sides is on-plane surface, is not to be irregular matsurface, it is to have suitable rule, therefore can see through adjustment wave radian and control out light effect.
Except said structure, please refer to Fig. 3, the present invention can further comprise an omnidirectional reflector 80 and a transparency conducting layer 90, and wherein, this omnidirectional reflector 80 is belows of being located at this substrate 10; And this transparency conducting layer 90 is tops of being located at this p type semiconductor layer 40.
This omnidirectional reflector 80 is ODR (Omnidirectional reflector), and it is manufactured as titanium dioxide and silicon dioxide repeat storehouse and forms.No matter its function be with the light of any polarization state or any angle incident, all can be by these omnidirectional reflector 80 reflections.Therefore, if the light that this luminescent layer 30 omnidirectionals disperse is advanced toward substrate 10 directions, can see through the reflection of this omnidirectional reflector 80, with again the lead desirable light direction of top of light-emitting diode of light, improving extraction efficiency.
As for this transparency conducting layer 90, its material is indium tin oxide, is indium oxide (In
2O
3) and tin-oxide (SnO
2) mixture, usually mass ratio is 90% In
2O
3With 10%SnO
2Be clear, colorless when it is in filminess, and have conductivity.Via electron beam evaporation, physical vapour deposition (PVD), or the method such as sputter-deposition technology, can make this transparency conducting layer 90.See through the setting of this transparency conducting layer, the electric current that this P type electrode 50 injects can arrive at this p type semiconductor layer 40 more equably, and then makes this luminescent layer 30 bright dipping more equably, improving extraction efficiency.And because this transparency conducting layer 90 is to be positioned on this p type semiconductor layer, therefore also manufacture and be wavy edge around its side, the edge that makes this luminescent layer 30, this p type semiconductor layer 40 and this transparency conducting layer 90 is with wavy and alignment is consistent.
Have under the light emitting diode construction of wavy side at this, because the edge of this luminescent layer 30, this p type semiconductor layer 40 and this transparency conducting layer 90 is wavy, lateral area is promoted, luminous efficiency is indebted to the exiting surface area change and increases, coordinate the setting of this omnidirectional reflector 80 and this transparency conducting layer 90, light emitting diode construction of the present invention can have good luminous efficiency again.
In sum, it is only preferred embodiment of the present invention, be not to limit scope of the invention process, all equalizations of doing according to the described shape of claim scope of the present invention, structure, feature and spirit change and modify, and all should be included in claim scope of the present invention.
Claims (7)
1. the light emitting diode construction with wavy side, is characterized in that, it is to comprise:
One substrate;
One n type semiconductor layer is the top of being located at this substrate;
One luminescent layer is the top of being located at this n type semiconductor layer; And
One p type semiconductor layer is the top of being located at this luminescent layer;
Wherein, the side edge of this luminescent layer and this p type semiconductor layer is wavy.
2. the light emitting diode construction with wavy side as claimed in claim 1, is characterized in that, further comprises a transparency conducting layer, is the top of being located at this p type semiconductor layer.
3. the light emitting diode construction with wavy side as claimed in claim 2, is characterized in that, wherein the side edge of this transparency conducting layer is wavy.
4. the light emitting diode construction with wavy side as claimed in claim 2, is characterized in that, wherein the material of this transparency conducting layer is indium tin oxide.
5. the light emitting diode construction with wavy side as claimed in claim 1, is characterized in that, further comprises an omnidirectional reflector, is the below of being located at substrate.
6. the light emitting diode construction with wavy side as claimed in claim 1, is characterized in that, further comprises a P type electrode, is the top of being located at this p type semiconductor layer.
7. the light emitting diode construction with wavy side as claimed in claim 1, is characterized in that, further comprises a N-type electrode, is the top of being located at this n type semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103691421A CN103107258A (en) | 2011-11-14 | 2011-11-14 | Light-emitting diode (LED) structure with wavy side edge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103691421A CN103107258A (en) | 2011-11-14 | 2011-11-14 | Light-emitting diode (LED) structure with wavy side edge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103107258A true CN103107258A (en) | 2013-05-15 |
Family
ID=48314966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103691421A Pending CN103107258A (en) | 2011-11-14 | 2011-11-14 | Light-emitting diode (LED) structure with wavy side edge |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103107258A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1767222A (en) * | 2004-10-28 | 2006-05-03 | 国联光电科技股份有限公司 | Light emitting diode and process for producing the same |
| EP2264793A2 (en) * | 2008-04-05 | 2010-12-22 | June O. Song | Light-emitting element |
-
2011
- 2011-11-14 CN CN2011103691421A patent/CN103107258A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1767222A (en) * | 2004-10-28 | 2006-05-03 | 国联光电科技股份有限公司 | Light emitting diode and process for producing the same |
| EP2264793A2 (en) * | 2008-04-05 | 2010-12-22 | June O. Song | Light-emitting element |
Non-Patent Citations (1)
| Title |
|---|
| C.S.CHANG ET AL.: "Nitride-Based LEDs With Textured Side Walls", 《IEEE PHOTONICS TECHNOLOGY LETTERS》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103325776A (en) | Light emitting device | |
| CN104006327A (en) | Light-emitting diode backlight module | |
| CN1921111A (en) | Solar battery LED interlayer for photoelectric curtain wall glass | |
| CN103681732B (en) | Cuttable organic light emitting diode light source device for wireless power transmission | |
| CN202363508U (en) | LED structure having trapezoidal side-edge inclined plane | |
| CN103715319B (en) | A kind of light emitting diode and preparation method thereof | |
| CN102569581B (en) | LED chip structure with overlapped electrodes | |
| CN202196806U (en) | Light-emitting diode (LED) chip with current barrier layer | |
| CN103247607B (en) | Light-emitting diode | |
| CN102544294A (en) | LED (Light Emitting Diode) chip capable of improving current transmission | |
| CN204029846U (en) | A kind of novel light-emitting diode | |
| CN203165931U (en) | Light emitting diode chip | |
| CN103107258A (en) | Light-emitting diode (LED) structure with wavy side edge | |
| CN202523749U (en) | LED structure of slant substrate with reflection function | |
| CN103094445A (en) | Light emitting diode structure with uneven side edges | |
| CN104134724A (en) | High-voltage LED chip and manufacturing method thereof | |
| US8933469B2 (en) | High-voltage light-emitting device | |
| CN203521481U (en) | Optical brightening structure and organic light-emitting diode lighting device | |
| CN103594591B (en) | There is the manufacture method of the inverted light-emitting diode (LED) of transparency electrode | |
| CN203721754U (en) | Light emitting diode possessing omni-directional reflecting mirror | |
| CN103594593B (en) | There is the manufacture method of the inverted light-emitting diode (LED) of alligatoring transparency electrode | |
| CN103107254A (en) | Light-emitting diode (LED) structure of current blocking layer with plural penetrating holes | |
| CN105336827A (en) | Led chip and preparation method thereof | |
| CN206610831U (en) | Organic LED display device | |
| CN202487643U (en) | LED (light-emitting diode) chip structure with superimposed electrodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130515 |