CN103107254A - Light-emitting diode (LED) structure of current blocking layer with plural penetrating holes - Google Patents
Light-emitting diode (LED) structure of current blocking layer with plural penetrating holes Download PDFInfo
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- CN103107254A CN103107254A CN2011103691173A CN201110369117A CN103107254A CN 103107254 A CN103107254 A CN 103107254A CN 2011103691173 A CN2011103691173 A CN 2011103691173A CN 201110369117 A CN201110369117 A CN 201110369117A CN 103107254 A CN103107254 A CN 103107254A
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- current blocking
- emitting diode
- blocking layer
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Abstract
The invention relates to a light-emitting diode (LED) structure of a current blocking layer with plural penetrating holes. The LED structure can be used in the field of LEDs, such as a common LED, a high-pressure LED and an alternating current LED, the current blocking layer is provided so as to improve light-emitting efficiency, the current blocking layer is provided with the plural penetrating holes, current can be evenly scattered and circulated into a P-shaped semiconductor layer by conductive filling layers which are arranged in the penetrating holes, therefore, a lighting-emitting layer can evenly light, and the aim of improving light-emitting efficiency is achieved.
Description
Technical field
The present invention relates to a kind of light emitting diode construction, espespecially a kind of light emitting diode construction with current blocking layer of a plurality of perforated holes.
Background technology
Due to modern age fossil energy deficient gradually, to energy-conserving product demand expanding day, so the technology of light-emitting diode (LED) has significant progress.And under the unsettled condition of oil price, global every country drops into the exploitation of energy-conserving product energetically, and it is product under this trend that light-emitting diode is applied to Electricity-saving lamp bulb.In addition, progress along with LED technology, (for example: blue light) application of light-emitting diode is also extensive gradually, and its application now can comprise: the backlight of liquid crystal display (LCD), printer, be used for optics connecting elements, indicator light, ground light, escape lamp, Medical Devices light source, automobile instrument and built-in light, floor light, the key lighting of computer for white light or other color ... Deng.
Light-emitting diode is except the advantage such as low due to power consumption, that not mercurous, the life-span is long, CO2 emissions is low, and the environmental protection policy of global national governments forbidding mercury also orders about research and development and application that the researcher drops into white light emitting diode.When global environmental protection agitation was in the ascendant, the light-emitting diode that is called green light source can meet the main flow trend in the whole world, and as front indication, it has been widely used on 3C Product indicating device and display unit; And the raising of producing again yield along with light-emitting diode, the unit manufacturing cost also significantly reduces, so the demand of light-emitting diode continues to increase.
Brought forward is described, and the light-emitting diode of this moment developing high brightness has become the Research Emphasis of various countries manufacturer, yet still there is defective in current light-emitting diode.Except the problem of heat radiation, the impact that traditional light emitting diode construction has many shortcomings can cause brightness to descend, and topmost reason wherein are exactly that electric current scatters and the problem of electrode shading.
In the past technology, once the choice for use indium tin oxide was as transparency conducting layer, and its mechanism is to make the electric current of P type electrode can be evenly distributed in whole p type semiconductor layer, whole P-N junction was produced uniformly compound and luminous.Although indium tin oxide direct Shen is amassed on the P-gallium nitride can form Xiao Ji contact (Schottky Contact), because indium tin oxide has light transmittance preferably, so still can work as transparency conducting layer by the choice for use indium tin oxide.
In addition, the light-emitting diode field also begins to adopt the crystal covering type structure or rectilinear electrode structure comes improving luminous efficiency.Because general light-emitting diode is to adopt sapphire substrate is directly sticked packaged type on cup; Yet such packaged type can make light in when output, can be subject to gluing pad and stopping of metal routing and causes luminosity to reduce, and therefore has the crystal covering type of employing structure to improve the defective that light can be blocked.
Also has a kind of improvement mode for using current barrier layer.The sense of current of general light-emitting diode is shortest path, so will make most electric current all inject the zone of P type electrode below.To cause so most light to be gathered in below P type electrode, thereby make the light that produces be stopped and can't export in a large number by P type electrode, and cause optical output power to descend.Therefore, can use current barrier layer (Current Blocking Layer) to improve, the method is to use the mode of etching and chemical vapour deposition (CVD), with insulator deposition in modular construction.Be used for stopping the shortest path, the electric current of light-emitting diode is flowed toward all the other paths, and then the brightness of assembly is promoted.
Further breakthrough is done in the design that the present invention is directed to current barrier layer, makes the electric current of light-emitting diode can be scattered in better semiconductor layer, to promote the luminous efficiency of light-emitting diode.
Summary of the invention
Main purpose of the present invention, be to provide a kind of light emitting diode construction with current blocking layer of a plurality of perforated holes, it sees through current blocking layer is manufactured as having a plurality of perforated holes, recycle the formed conductive fill layer of electric conducting material in those perforated holes, make electric current be able to than Uniform Dispersion arrive at p type semiconductor layer, the luminous efficiency of light-emitting diode is improved.
Secondary objective of the present invention is to provide a kind of light emitting diode construction with current blocking layer of a plurality of perforated holes, and its substrate has the inclined-plane, increases all reflective light probability, and the luminous efficiency of light-emitting diode is improved.
Technical scheme of the present invention is: a kind of light emitting diode construction with current blocking layer of a plurality of perforated holes, and it is to comprise:
One substrate;
One n type semiconductor layer is the top of being located at this substrate;
One luminescent layer is the top of being located at this n type semiconductor layer;
One p type semiconductor layer is the top of being located at this luminescent layer;
One current blocking layer is the top of being located at this p type semiconductor layer, and it has a plurality of perforated holes, and those perforated holes are to contact with this p type semiconductor layer, and is that a conductive fill layer is set within each those perforated holes; And
One transparency conducting layer is the top that covers this current blocking layer.
In the present invention, further comprising a P type electrode, is the top that is positioned at this transparency conducting layer, and is arranged at not corresponding those perforated holes.
In the present invention, wherein the material of those conductive fill layers is indium tin oxide.
In the present invention, wherein the material of this transparency conducting layer is indium tin oxide.
In the present invention, wherein this conductive fill layer and this transparency conducting layer are can the person of being one of the forming.
In the present invention, wherein the material of this current blocking layer is to be selected from one of them of silicon dioxide, silicon nitride and aluminium oxide.
In the present invention, wherein the side of this substrate has at least one inclined plane part, and this inclined plane part is to be connected with a bottom, and the length of this bottom is less than a top.
In the present invention, wherein this inclined plane part is positioned at this substrate side 20～50 microns places from bottom to up.
The beneficial effect that the present invention has: the present invention discloses a kind of light emitting diode construction with current blocking layer of a plurality of perforated holes, and it is to comprise a substrate; One n type semiconductor layer is the top of being located at this substrate; One luminescent layer is the top of being located at this n type semiconductor layer; One p type semiconductor layer is the top of being located at this luminescent layer; One current blocking layer is the top of being located at this p type semiconductor layer, and it has a plurality of perforated holes, and those perforated holes are to contact with this p type semiconductor layer, and is that a conductive fill layer is set within each those perforated holes; And a transparency conducting layer, be the top that covers this current blocking layer.See through this light emitting diode construction, the luminous efficiency of light-emitting diode is improved again.
Description of drawings
Fig. 1: it is the structural representation of a preferred embodiment of the present invention.
[figure number is to as directed]
10 substrate 101 inclined plane parts
102 103 tops, bottoms
20N type semiconductor layer 30 luminescent layers
40P type semiconductor layer 50 current blocking layers
501 perforated holes 60 conductive fill layers
70 transparency conducting layer 80P type electrodes
90N type electrode
Embodiment
Further understand and understanding for making architectural feature of the present invention and the effect reached are had, coordinate detailed explanation in order to preferred embodiment and accompanying drawing, be described as follows:
Those light emitting diode constructions in prior art, though it has transparency conducting layer or the design of current blocking layer, yet not yet can better solve the problem that electric current scatters, still have the further space of improving luminous efficiency, therefore the present invention is directed to the effect that motor current scatters, design this light emitting diode construction to reach the target of high-luminous-efficiency.And this light emitting diode construction is widely used, and except the light-emitting diode on general basis, also is suitable for the fields such as high-voltage LED (HVLED), alternating current of led (ACLED).
At first, please refer to Fig. 1, the light emitting diode construction with current blocking layer of a plurality of perforated holes of the present invention is to comprise a substrate 10; One n type semiconductor layer 20; One luminescent layer 30; One p type semiconductor layer 40; One current blocking layer 50; A plurality of perforated holes 501; Plural conductive packed layer 60; An and transparency conducting layer 70.
Wherein, this n type semiconductor layer 20 is tops of being located at this substrate 10; This luminescent layer 30 is tops of being located at this n type semiconductor layer 20; This p type semiconductor layer 40 is tops of being located at this luminescent layer 30; This current blocking layer 50 is tops of being located at this p type semiconductor layer 40; Those perforated holes 501 are positioned at this current blocking layer 50, and contact with this p type semiconductor layer 40; Those conductive fill layers 60 are to be positioned at those perforated holes 501; And this transparency conducting layer 70 is the tops that cover this current blocking layer 50.
Except said modules, then please refer to Fig. 1, the light emitting diode construction with current blocking layer of a plurality of perforated holes of the present invention further comprises a P type electrode 80 and a N-type electrode 90; And this substrate 10 also further comprises at least one inclined plane part 101.
Wherein, this P type electrode 80 is the tops that are positioned at this transparency conducting layer 70, those perforated holes 501 of not corresponding covering; This N-type electrode 90 is positioned at this n type semiconductor layer; Those inclined plane parts 101 are positioned at the side of this substrate 10, and it is to be connected with a bottom 102, and the length of this bottom 102 is less than a top 103.
The key technical feature of the light emitting diode construction improving luminous efficiency of the current blocking layer with a plurality of perforated holes of the present invention is to arrange this current blocking layer 50 with those perforated holes 501.Please refer to the light emitting diode construction of Fig. 1, electric current can be first by this transparency conducting layer 70 after this P type electrode 80 flows into.The material of this transparency conducting layer 70 is indium tin oxide, is indium oxide (In
2O
3) and tin-oxide (SnO
2) mixture, usually mass ratio is 90% In
2O
3With 10%SnO
2Be clear, colorless when it is in filminess, and have conductivity.Via electron beam evaporation, physical vapour deposition (PVD), or the method such as sputter-deposition technology, can make this transparency conducting layer 70.
After treating that electric current passes through this transparency conducting layer 70, then arrive this current blocking layer 50.Because the material of this current blocking layer 50 is to be selected from one of them of silicon dioxide, silicon nitride and aluminium oxide, and those materials are all insulator, so electric current will be difficult to by this current blocking layer 50.Yet although the current blocking layer 50 of this case is arranged between this transparency conducting layer 70 and this p type semiconductor layer 40 comprehensively, its those perforated holes 501 that have still can allow electric current pass through.
In the middle of those perforated holes 501, be those conductive fill layers 60, the material of those conductive fill layers 60 is conductive material.Because this conductive fill layer 60 and this transparency conducting layer 70 are can the person of being one of the forming, therefore the material of those conductive fill layers 60 can be indium tin oxide, if not adopt integrally formed (indium tin oxide of this transparency conducting layer 70 being extended in those perforated holes 501 on manufacturing means, form those conductive fill layers 60), independently select the material of other tool conductivity to insert and be those conductive fill layers 60.
Because those perforated holes 501 are dispersed in this current blocking layer 50, when therefore continuing via those conductive fill layers 60 in those perforated holes 501 when electric current to advance toward the sense of current, will be to arrive at more equably this p type semiconductor layer 40.Owing to can guaranteeing that electric current arrives at this p type semiconductor layer 40 equably, therefore mean and can guarantee that a large amount of electronics is injected into this p type semiconductor layer 40 equably by this n type semiconductor layer 20, a large amount of electric holes is injected into this n type semiconductor layer 20 equably by this p type semiconductor layer 40.In the situation that electronics, electric hole move, this luminescent layer 30 bright dipping equably, but not concentrate on the subregion.
In addition, exhale smoothly light emitting diode construction of the present invention for guaranteeing the luminous energy that light source produces, this P type electrode 80 is the tops that are arranged at this transparency conducting layer 70, and is arranged at not corresponding those perforated holes 501.Under this design, this P type electrode 80 belows are across transparency conducting layer 70, correspond to a part current blocking layer 50 that does not comprise perforated holes 501 fully, can avoid thus electric current to circulate under this P type electrode 80, use the counter possibility of suffering that this P type electrode 80 stops of light time and drop to minimum, guarantee good light extraction efficiency.
In addition, the present invention also has breakthrough to the structural design of this substrate 10.As previously mentioned, the side of this substrate 10 is provided with this inclined plane part 101, and this inclined plane part 101 is smooth ramp, and this inclined plane part 101 is to be connected with this bottom 102, the length of this bottom 102 is less than this top 103, so the zone that this substrate 10 is provided with this inclined plane part 101 is wide at the top and narrow at the bottomly toward inside contracting.Therefore because luminescent layer 30 issued lights are all omni-directional, have the light of part to advance toward this substrate 10, yet that this be the bright dipping of luminescence component are reverse, so are helpless to increase luminous efficiency.Therefore substrate 10 sides of the present invention are provided with this inclined plane part 101, just can increase the reflection of light probability, wherein, the inclined-plane of this inclined plane part 101 is substrate 10 sides 20～50 microns places from bottom to up.So can make luminosity more concentrated, make luminous efficiency obtain to promote.
See through this and have the light emitting diode construction of the current blocking layer of a plurality of perforated holes, this luminescent layer 30 bright dipping equably improves luminous efficiency, then improves the reflection probability by the inclined plane part 101 of substrate 10, guarantees that light can upwards disperse smoothly.
In sum, it is only preferred embodiment of the present invention, be not to limit scope of the invention process, all equalizations of doing according to the described shape of claim scope of the present invention, structure, feature and spirit change and modify, and all should be included in claim scope of the present invention.
Claims (8)
1. the light emitting diode construction with current blocking layer of a plurality of perforated holes, is characterized in that, it is to comprise:
One substrate;
One n type semiconductor layer is the top of being located at this substrate;
One luminescent layer is the top of being located at this n type semiconductor layer;
One p type semiconductor layer is the top of being located at this luminescent layer;
One current blocking layer is the top of being located at this p type semiconductor layer, and it has a plurality of perforated holes, and those perforated holes are to contact with this p type semiconductor layer, and is that a conductive fill layer is set within each those perforated holes; And
One transparency conducting layer is the top that covers this current blocking layer.
2. the light emitting diode construction with current blocking layer of a plurality of perforated holes as claimed in claim 1, is characterized in that, further comprises a P type electrode, is the top that is positioned at this transparency conducting layer, and be arranged at not corresponding those perforated holes.
3. the light emitting diode construction with current blocking layer of a plurality of perforated holes as claimed in claim 1, is characterized in that, wherein the material of those conductive fill layers is indium tin oxide.
4. the light emitting diode construction with current blocking layer of a plurality of perforated holes as claimed in claim 1, is characterized in that, wherein the material of this transparency conducting layer is indium tin oxide.
5. the light emitting diode construction with current blocking layer of a plurality of perforated holes as claimed in claim 1, is characterized in that, wherein this conductive fill layer and this transparency conducting layer are can the person of being one of the forming.
6. the light emitting diode construction with current blocking layer of a plurality of perforated holes as claimed in claim 1, is characterized in that, wherein the material of this current blocking layer is to be selected from one of them of silicon dioxide, silicon nitride and aluminium oxide.
7. the light emitting diode construction with current blocking layer of a plurality of perforated holes as claimed in claim 1, it is characterized in that, wherein the side of this substrate has at least one inclined plane part, and this inclined plane part is to be connected with a bottom, and the length of this bottom is less than a top.
8. the light emitting diode construction with current blocking layer of a plurality of perforated holes as claimed in claim 7, is characterized in that, wherein this inclined plane part is positioned at this substrate side 20～50 microns places from bottom to up.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103691173A CN103107254A (en) | 2011-11-14 | 2011-11-14 | Light-emitting diode (LED) structure of current blocking layer with plural penetrating holes |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103691173A CN103107254A (en) | 2011-11-14 | 2011-11-14 | Light-emitting diode (LED) structure of current blocking layer with plural penetrating holes |
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| CN103107254A true CN103107254A (en) | 2013-05-15 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795477A (en) * | 2015-03-03 | 2015-07-22 | 华灿光电(苏州）有限公司 | Light emitting diode chip with inverse structure and preparation method thereof |
| WO2017092451A1 (en) * | 2015-12-04 | 2017-06-08 | 天津三安光电有限公司 | Light-emitting diode chip and manufacturing method therefor |
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| CN101378100A (en) * | 2007-08-29 | 2009-03-04 | 台达电子工业股份有限公司 | Light emitting diode device and manufacturing method thereof |
| US20100148189A1 (en) * | 2008-12-15 | 2010-06-17 | Lextar Electronics Corp. | Light emitting diode |
| JP2011165801A (en) * | 2010-02-08 | 2011-08-25 | Showa Denko Kk | Light emitting diode and method for manufacturing the same, and light emitting diode lamp |
-
2011
- 2011-11-14 CN CN2011103691173A patent/CN103107254A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101378100A (en) * | 2007-08-29 | 2009-03-04 | 台达电子工业股份有限公司 | Light emitting diode device and manufacturing method thereof |
| US20100148189A1 (en) * | 2008-12-15 | 2010-06-17 | Lextar Electronics Corp. | Light emitting diode |
| JP2011165801A (en) * | 2010-02-08 | 2011-08-25 | Showa Denko Kk | Light emitting diode and method for manufacturing the same, and light emitting diode lamp |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795477A (en) * | 2015-03-03 | 2015-07-22 | 华灿光电(苏州）有限公司 | Light emitting diode chip with inverse structure and preparation method thereof |
| CN104795477B (en) * | 2015-03-03 | 2017-06-27 | 华灿光电(苏州）有限公司 | A kind of light-emitting diode chip for backlight unit of inverted structure and preparation method thereof |
| WO2017092451A1 (en) * | 2015-12-04 | 2017-06-08 | 天津三安光电有限公司 | Light-emitting diode chip and manufacturing method therefor |
| US10340469B2 (en) | 2015-12-04 | 2019-07-02 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light emitting diode chip and fabrication method |
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Application publication date: 20130515 |