CN103107233B - Monocrystaline silicon solar cell and preparation method thereof - Google Patents
Monocrystaline silicon solar cell and preparation method thereof Download PDFInfo
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- CN103107233B CN103107233B CN201210529346.1A CN201210529346A CN103107233B CN 103107233 B CN103107233 B CN 103107233B CN 201210529346 A CN201210529346 A CN 201210529346A CN 103107233 B CN103107233 B CN 103107233B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
A kind of manufacture method of monocrystaline silicon solar cell, including: providing substrate, described substrate is first kind monocrystalline silicon piece；Surface forms SiGe virtual substrate on the substrate；Forming Second Type doped layer in described SiGe virtual substrate, described Second Type doped layer is by biaxial stress；Anti-reflecting layer is formed on described Second Type doped layer surface；Form the first electrode on described anti-reflecting layer surface, form the second electrode at described substrate lower surface.The manufacture method of described monocrystaline silicon solar cell can be effectively improved the mobility of carrier in monocrystaline silicon solar cell, improves the conversion efficiency of monocrystaline silicon solar cell.
Description
Technical field
The present invention relates to area of solar cell, particularly to a kind of monocrystaline silicon solar cell and making thereof
Method.
Background technology
Solaode utilizes photoelectric effect to convert the light to electric energy.Basic solar battery structure, bag
Include single p-n junction, P-I-N/N-I-P knot and multijunction structure.Typical single p-n junction structure includes: p-type is mixed
Diamicton and n-type doping layer.Single p-n junction solaode has homojunction and two kinds of structures of hetero-junctions: homojunction
The p-type doped layer of structure and n-type doping layer are all made up of analog material (band gap of material is equal), different
Matter junction structure includes that at least two-layer has the material of different band gap.P-I-N/N-I-P structure include p-type doped layer,
N-type doping layer and the intrinsic semiconductor layer (undoped p I layer) being sandwiched between P layer and N shell.Multijunction structure bag
Including multiple semiconductor layers with different band gap, the plurality of semiconductor layer stacks mutually.
In solar cells, light is absorbed near P-N junction, produces light induced electron and photohole, institute
Stating light induced electron and photohole diffuses into P-N junction and is built electric field separately, light induced electron is pushed into N
District, hole is pushed into P district.Form positive and negative charge accumulated in PN junction both sides, produce photo-induced voltage thus
Generate through described device and the electric current of external circuitry.
At present, monocrystaline silicon solar cell produced widely due to its bigger photoelectric transformation efficiency and
Application, monocrystaline silicon solar cell is usually doped N-type ion on p type single crystal silicon sheet and forms PN junction.Single
The conversion efficiency of crystal silicon solar batteries is affected by several factors, needs further to be improved.
More manufacture methods about monocrystaline silicon solar cell refer to Publication No. CN102315327A
Chinese patent.
Summary of the invention
The problem that the present invention solves is to provide a kind of monocrystaline silicon solar cell and preparation method thereof, improves single
The conversion efficiency of crystal silicon solar batteries.
For solving the problems referred to above, technical scheme proposes the system of a kind of monocrystaline silicon solar cell
Make method, including: providing substrate, described substrate is first kind monocrystalline silicon piece；Table on the substrate
Face forms SiGe virtual substrate；Described SiGe virtual substrate is formed Second Type doped layer, described
Second Type doped layer is by biaxial stress；Anti-reflecting layer is formed on described Second Type doped layer surface；
Form the first electrode on described anti-reflecting layer surface, form the second electrode at described substrate lower surface.
Optionally, the method forming described SiGe virtual substrate includes: first grow one layer at substrate surface
The Si that Ge content is gradually increased with thickness1-xGexCushion, then at described Si1-xGexBuffer-layer surface growth one
Relaxation Si of layer Ge stable content1-xGexLayer, described Si1-xGexCushion and relaxation Si1-xGexLayer constitutes SiGe
Virtual substrate.
Optionally, the formation process of described SiGe virtual substrate includes molecular beam epitaxy, high vacuum chemical
Vapour deposition or rpcvd.
Optionally, also include, after the upper surface of described substrate forms SiGe virtual substrate, described
SiGe virtual substrate surface forms intrinsic layer, then forms the doping of described Second Type on described intrinsic layer surface
Layer.
Optionally, described intrinsic layer thickness scope
Optionally, described substrate is n type single crystal silicon sheet, then Second Type doped layer is P-type layer, or
Described substrate is p type single crystal silicon sheet, then Second Type doped layer is N-type layer.
Optionally, the dopant ion of described Second Type doped layer includes the one in phosphorus, arsenic or antimony or several
Kind.
Optionally, the dopant ion of described Second Type doped layer includes the one in boron, gallium or indium or several
Kind.
Optionally, in described Second Type doped layer, the concentration range of dopant ion is 1E10/cm3
~1E20/cm3。
Optionally, the thickness range of described Second Type doped layer is
For solving the problems referred to above, the invention allows for a kind of monocrystaline silicon solar cell, including: substrate,
Described substrate is first kind single-chip；It is positioned at the SiGe virtual substrate of the upper surface of described substrate；It is positioned at
The Second Type doped layer on described SiGe virtual substrate surface；It is positioned at described Second Type doped layer surface
Anti-reflecting layer；It is positioned at first electrode on described anti-reflecting layer surface；It is positioned at the second of described substrate lower surface
Electrode.
Optionally, described substrate is n type single crystal silicon sheet, and the most described Second Type doped layer is P-type layer；
Or described substrate is p type single crystal silicon sheet, the most described Second Type doped layer is N-type layer.
Optionally, described SiGe virtual substrate includes what the Ge content of substrate surface was gradually increased with thickness
Si1-xGexCushion and be positioned at Si1-xGexRelaxation Si of the Ge stable content of buffer-layer surface1-xGexLayer.
Optionally, the intrinsic layer between SiGe virtual substrate and Second Type doped layer is also included.
Optionally, described intrinsic layer thickness scope is
Optionally, the dopant ion of described Second Type doped layer includes the one in phosphorus, arsenic or antimony or several
Kind.
Optionally, the dopant ion of described Second Type doped layer includes the one in boron, gallium or indium or several
Kind.
Optionally, in described Second Type doped layer, the concentration range of dopant ion is 1E10/cm3
~1E20/cm3。
Optionally, the thickness range of described Second Type doped layer is
Compared with prior art, the invention have the advantages that
After the upper surface of substrate forms SiGe virtual substrate, then shape in described SiGe virtual substrate
Becoming Second Type doped layer, described Second Type doped layer is the doped layer differed with Substrate Doping type.
Due to lattice mismatch between the Second Type doped layer that SiGe virtual substrate and surface thereof are formed, described the
Can produce biaxial stress in two type doped layers, Second Type doped layer is empty according to SiGe in growth plane
Intend the lattice epitaxial growth of substrate, owing to the lattice paprmeter of Si is less than SiGe, therefore, described Second Type
Doped layer in growth plane by tensile stress, and by compressive stress on the direction of vertical-growth plane,
Carrier in described Second Type doped layer is in Second Type doped layer, to the mistake of the first electrode flowing
Making stereo-motion in journey in three-dimensional, described biaxial stress can improve Second Type doped layer simultaneously
Interior electronics and the mobility in hole.Thus improve the mobility of carrier in monocrystaline silicon solar cell, fall
The recombination rate of low carrier, improves total electric current density of solaode, improves turning of solaode
Change efficiency.
Further, described SiGe virtual substrate includes what the Ge content of substrate surface was gradually increased with thickness
Si1-xGexCushion and be positioned at Si1-xGexRelaxation Si of the Ge stable content of buffer-layer surface1-xGexLayer.Described
The Si that Ge content is gradually increased with thickness1-xGexCushion can effectively control bit mistake upwardly extend, thus shape
Become less relaxation Si of dislocation defects1-xGexLayer, thus high-quality is obtained on described SiGe virtual substrate surface
Second Type doped layer.
Further, formation intrinsic layer between SiGe virtual substrate and Second Type doped layer, described
Levy layer and can improve the quantity of carrier, and lattice mismatch between SiGe virtual substrate and intrinsic layer,
Can produce biaxial stress in described intrinsic layer, the carrier in described intrinsic layer is in intrinsic layer, to the two poles of the earth
Making stereo-motion during flowing in three-dimensional, described intrinsic layer is stressed effect, can improve
The mobility of intrinsic layer carriers, reduces the recombination rate of carrier, improves total electricity of solaode
Current density, improves the mobility of solaode.
Further, described SiGe virtual substrate is positioned at substrate and the Second Type doped layer of solaode
Between, described substrate and Second Type doped layer form N-type layer and the P-type layer of monocrystaline silicon solar cell,
Owing to the lattice paprmeter of described SiGe virtual substrate is more than the lattice paprmeter of Si, institute in Second Type doped layer
With the carrier in SiGe virtual substrate, there is higher mobility, be more beneficial for the light of solaode
Raw hole enters p-type substrate from N-type layer, and light induced electron enters N-type layer from p-type substrate, reduces current-carrying
The recombination rate of son, improves total electric current density of solaode, improves the mobility of solaode.
Accompanying drawing explanation
Fig. 1 is the flow process signal of the manufacture method of monocrystaline silicon solar cell in the first embodiment of the present invention
Figure；
Fig. 2 to Fig. 6 is the cuing open of the manufacture method of monocrystaline silicon solar cell in the first embodiment of the present invention
Face schematic diagram；
Fig. 7 to Figure 12 is the cuing open of the manufacture method of monocrystaline silicon solar cell in the second embodiment of the present invention
Face schematic diagram.
Detailed description of the invention
As described in the background art, the conversion efficiency of current monocrystaline silicon solar cell needs further to be carried
High.
Research finds, the compound open-circuit voltage directly affecting solaode of photo-generated carrier.So carrying
Stream is during electrode movement, and the migration rate improving carrier can effectively reduce photoproduction current-carrying
Son recombination rate thus improve the conversion efficiency of solaode.
The present invention proposes a kind of monocrystaline silicon solar cell and preparation method thereof, in SiGe virtual substrate
Forming Second Type doped layer, described Second Type doped layer is by biaxial stress effect, it is possible to increase too
The migration rate of the carrier of sun energy battery, thus improve the conversion efficiency of solaode.
Understandable, below in conjunction with the accompanying drawings for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from
The detailed description of the invention of the present invention is described in detail.Described embodiment be only the present invention can
A part for embodiment rather than they are whole.When describing the embodiment of the present invention in detail, for purposes of illustration only,
Schematic diagram can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, and it should not at this
Limit the scope of the invention.Additionally, the three of length, width and the degree of depth should be comprised in actual fabrication
Dimension space size.According to described embodiment, those of ordinary skill in the art is without creative work
Under premise, obtainable other embodiments all, broadly fall into protection scope of the present invention.Therefore the present invention
Do not limited by following public being embodied as.
First embodiment
Refer to Fig. 1, for the schematic flow sheet of the manufacture method of monocrystaline silicon solar cell in the present embodiment,
Including:
Step S1: providing substrate, described substrate is first kind monocrystalline silicon piece；
Step S2: the upper surface at described substrate forms SiGe virtual substrate；
Step S3: form Second Type doped layer on described SiGe virtual substrate surface；
Step S4: form anti-reflecting layer on described Second Type doped layer surface；
Step S5: form the first electrode on described anti-reflecting layer surface, forms the at described substrate lower surface
Two electrodes.
Refer to Fig. 2, it is provided that substrate 100.
Concrete, described substrate 100 is p type single crystal silicon sheet or n type single crystal silicon sheet, adopts in the present embodiment
Substrate be p type single crystal silicon sheet, described p type single crystal silicon sheet be formed silicon chip when to described silicon
Sheet carries out boron ion doping, it is also possible to be described silicon chip is carried out in boron, gallium or indium one or more from
The doping of son.
Refer to Fig. 3, the upper surface at described substrate 100 forms SiGe virtual substrate 110.
Concrete, described SiGe virtual substrate 110 include the Ge content being positioned at the upper surface of substrate 100 with
The Si that thickness is gradually increased1-xGexCushion 101 and be positioned at Si1-xGexThe Ge content on cushion 101 surface is steady
Fixed relaxation Si1-xGexLayer 102.
The formation process of described SiGe virtual substrate 110 includes molecular beam epitaxy, ultrahigh vacuum chemical vapor
Deposition or rpcvd.The present embodiment uses ultra-high vacuum CVD technique.?
Before forming described SiGe virtual substrate 110, first described substrate 100 is carried out, removes substrate
The impurity on 100 surfaces, to guarantee SiGe virtual substrate 110 mass being subsequently formed.The temperature of 850 DEG C
Under, use Si2H6As reacting gas source, first grow one layer of Si cushion (not shown) at substrate surface,
To improve growth initial surface, described Si2H6Flow be 13sccm, the thickness of described Si cushion is
200nm~600nm；Then Si is grown1-xGexCushion 101, described Si1-xGexGe in cushion 101
Content x is gradually increased along with growth thickness, keeps Si2H6Flow be that 13sccm is constant, GeH4Flow
It is incremented by from 0 to 5sccm, forms the Si that Ge content is gradually increased with thickness1-xGexCushion 101；Again in institute
State Si1-xGexCushion 101 superficial growth relaxation Si1-xGexLayer 102, now keeps Si2H6Flow be
13sccm, GeH4Flow be 2.5sccm, formed relaxation Si1-xGexLayer 102, described relaxation Si1-xGexLayer
In 102, the content x of Ge keeps stable.Described Si1-xGexCushion 101 and relaxation Si1-xGexLayer 102 structure
Become SiGe virtual substrate 110.Wherein, the Ge content on substrate 100 surface is gradually increased with thickness
Si1-xGexCushion 101 can effectively control bit mistake upwardly extend, thus at described Si1-xGexCushion 101
Surface forms less relaxation Si of dislocation defects1-xGexLayer 102, and in described SiGe virtual substrate 110
Surface obtains high-quality Second Type doped layer.
Refer to Fig. 4, described SiGe virtual substrate 110 is formed Second Type doped layer 103.
Described Second Type doped layer 103 is P-type layer or N-type layer, and doping type and substrate 100
Doping type is different.In the present embodiment, the substrate 100 of employing is p type single crystal silicon sheet, so, in institute
The Second Type doped layer 103 stating the formation of SiGe virtual substrate 110 surface is N-type layer.
In the present embodiment, the forming method of described Second Type doped layer 103 is: virtual at described SiGe
Deposit one layer of monocrystalline silicon layer on substrate 100, described monocrystalline silicon layer is carried out N-type ion doping and forms Equations of The Second Kind
Type doped layer 103.Described dopant ion includes one or more in phosphorus, arsenic or antimony, described dopant ion
Concentration be 1E10/cm3～1E20/cm3, the technique of described doping is that plasma injects or diffusion.Described
The thickness of Second Type doped layer 103 is
In other embodiments of the invention, the substrate 100 of employing is n type single crystal silicon sheet, in described N-type
After monocrystalline silicon sheet surface forms SiGe virtual substrate, second formed on described SiGe virtual substrate surface
Type doped layer is P-type layer.The forming method of described P-type layer is, deposits in described SiGe virtual substrate
One layer of monocrystalline silicon layer, carries out p-type ion doping and forms Second Type doped layer monocrystalline silicon layer.Described doping
Ion includes that one or more in boron, gallium or indium, the concentration of described dopant ion are 1E10/cm3
~1E20/cm3, the technique of described doping is that plasma injects or diffusion.Described Second Type doped layer
Thickness is
In the present embodiment, described SiGe virtual substrate 110 forms Second Type doped layer 103.By
Lattice mismatch between the Second Type doped layer 103 that SiGe virtual substrate 110 and surface thereof are formed,
Can produce biaxial stress in described Second Type doped layer 103, Second Type doped layer is in growth plane
The interior lattice epitaxial growth according to SiGe virtual substrate 110, due to the lattice of Si in Second Type doped layer
The constant lattice paprmeter less than SiGe, therefore, described Second Type doped layer is subject to open in growth plane
Stress, and by compressive stress, the load in described Second Type doped layer on the direction of vertical-growth plane
Stream is making stereo-motion during the first electrode flowing in three-dimensional, and described biaxial stress can
To improve electronics and the mobility in hole in Second Type doped layer 103 simultaneously, thus improve monocrystal silicon too
In sun energy battery, the mobility of carrier, improves total electric current density of solaode, improves solar energy
The conversion efficiency of battery.
Further, owing to the lattice paprmeter of SiGe virtual substrate is more than the lattice paprmeter of Si, so, photoproduction is empty
Cave and light induced electron mobility ratio in described SiGe virtual substrate are big in substrate and doped layer, so,
It is more beneficial for photo-generated carrier and crosses PN junction, reduce the recombination rate of carrier, thus improve the monocrystal silicon sun
The conversion efficiency of energy battery.
Refer to Fig. 5, form anti-reflecting layer 104 on described Second Type doped layer 103 surface.
Concrete, the methods such as PECVD, magnetron sputtering or electron beam evaporation can be used to form anti-reflecting layer
104, described anti-reflecting layer 104 is the transparent material of low-refraction coefficient, such as TiO2、SiN、SiO、
Al2O3、SiO2Or CeO2Deng.The thickness range of described anti-reflecting layer 104 isDescribed
Anti-reflecting layer 104 is in addition to antireflecting effect, it is also possible to play the effect of passivated surface, reduces current-carrying
Son being combined on Second Type doped layer surface.The material of the anti-reflecting layer 104 used in the present embodiment is
TiO2。
The present embodiment is before forming anti-reflecting layer 104, it is also possible to first adopt on Second Type doped layer surface
Form a layer thickness scope by thermal oxidation technology to be positioned atSilicon dioxide (not shown), thus
Minority carrier surface recombination can be reduced further.Because using thermal oxidation technology to form silicon dioxide
During, can effectively remove the interstitial defect of silicon face, thus be passivated unsaturation dangling bonds.
Refer to Fig. 6, form the first electrode 105, under described substrate on described anti-reflecting layer 104 surface
Surface forms the second electrode 106.
Form the concrete technology of described first electrode 105 and the second electrode 106 for those skilled in the art
Member does not repeats them here known to being.
According to above-mentioned manufacture method, embodiments of the invention additionally provide and a kind of use said method to make
Monocrystaline silicon solar cell.
Refer to Fig. 6, use the monocrystaline silicon solar cell that above-mentioned manufacture method is formed, including: substrate
100, described substrate is first kind monocrystalline silicon piece；It is positioned at the SiGe virtual substrate of described substrate upper surface
110；It is positioned at the Second Type doped layer 103 on described SiGe virtual substrate 110 surface；It is positioned at described second
The anti-reflecting layer 104 on type doped layer 103 surface；It is positioned at first electrode 105 on described anti-reflecting layer surface；
It is positioned at the second electrode 106 of described substrate lower surface.
Concrete, in the present embodiment, described substrate 100 is p type single crystal silicon sheet, Second Type doped layer 103
For N-type layer, in described Second Type doped layer, dopant ion includes one or more in phosphorus, arsenic or antimony,
The concentration of described dopant ion is 1E10/cm3~1E20/cm3, the thickness of described Second Type doped layer 103
ForIn other embodiments of the invention, described substrate can also is that n type single crystal silicon sheet,
The most described Second Type doped layer is P-type layer.
Described SiGe virtual substrate 110 includes what the Ge content on substrate 100 surface was gradually increased with thickness
Si1-xGexCushion 101 and be positioned at Si1-xGexRelaxation Si of the Ge stable content on cushion 101 surface1-xGex
Layer 102.
Described anti-reflecting layer 104 is the transparent material of low-refraction coefficient, such as TiO2、SiN、SiO、
Al2O3、SiO2Or CeO2Deng.Also may be used between described Second Type doped layer 103 and anti-reflecting layer 104
It is positioned at having a layer thickness scopeSilicon dioxide (not shown), described silicon dioxide is adopted
Formed by thermal oxidation technology, can effectively remove the interstitial defect of silicon face, thus be passivated unsaturation and hang
Key, reduces the surface recombination of carrier.
Second embodiment
In the present embodiment, for another kind of monocrystaline silicon solar cell and preparation method thereof.
Refer to Fig. 7, it is provided that substrate 200.
Concrete, described substrate 200 is p type single crystal silicon sheet or n type single crystal silicon sheet, adopts in the present embodiment
Substrate be p type single crystal silicon sheet, described p type single crystal silicon sheet be formed silicon chip when to described silicon
Sheet carries out boron ion doping, it is also possible to be described silicon chip is carried out in boron, gallium or indium one or more from
The doping of son.
Refer to Fig. 8, the upper surface at described substrate 200 forms SiGe virtual substrate 210.
Concrete, described SiGe virtual substrate 210 include the Ge content being positioned at the upper surface of substrate 200 with
The Si that thickness is gradually increased1-xGexCushion 201 and be positioned at Si1-xGexThe Ge content on cushion 201 surface is steady
Fixed relaxation Si1-xGexLayer 202.
The formation process of described SiGe virtual substrate 210 includes molecular beam epitaxy, ultrahigh vacuum chemical vapor
Deposition or rpcvd.The present embodiment uses ultra-high vacuum CVD technique.Tool
The method that body forms described SiGe virtual substrate 210 is identical with first embodiment, and therefore not to repeat here.
Refer to Fig. 9, described SiGe virtual substrate 210 is formed intrinsic layer 203.
On described SiGe virtual substrate 210 surface, chemical deposition process is used to form described intrinsic layer 203.
Described intrinsic layer 203 is monocrystalline silicon layer, it is possible to provide more current-carrying for described monocrystaline silicon solar cell
Son.The thickness of described intrinsic layer 203 is
Due to the lattice mismatch between the intrinsic layer 203 that SiGe virtual substrate 210 and surface thereof are formed,
Biaxial stress can be produced in described intrinsic layer 203, intrinsic layer in growth plane according to SiGe virtual substrate
The lattice epitaxial growth of 210, owing to the lattice paprmeter of Si is less than SiGe, therefore, described intrinsic layer is being given birth to
By tensile stress in long plane, and by compressive stress on the direction of vertical-growth plane, can carry simultaneously
Electronics and the mobility in hole in high intrinsic layer 203.Thus improve carrier in monocrystaline silicon solar cell
Mobility, improve solaode total electric current density, improve solaode conversion efficiency.
Refer to Figure 10, form Second Type doped layer 204 on described intrinsic layer 203 surface.
Described Second Type doped layer 204 is P-type layer or N-type layer, and doping type and substrate 200
Doping type is different.In the present embodiment, the substrate 200 of employing is p type single crystal silicon sheet, so, in institute
The Second Type doped layer 204 stating the formation of intrinsic layer 203 surface is N-type layer.Concrete described Equations of The Second Kind
The forming method of type doped layer is identical with first embodiment, and therefore not to repeat here.Described Second Type is mixed
The thickness of diamicton 204 is
Refer to Figure 11, form anti-reflecting layer 205 on described Second Type doped layer 204 surface.
Described anti-reflecting layer 104 is the transparent material of low-refraction coefficient, such as TiO2、SiN、SiO、
Al2O3、SiO2Or CeO2Deng.The thickness range of described anti-reflecting layer 104 isDescribed
The forming method of anti-reflecting layer is identical with first embodiment, and therefore not to repeat here.
The present embodiment is before forming anti-reflecting layer 205, it is also possible to first adopt on Second Type doped layer surface
Form a layer thickness scope by thermal oxidation technology to be positioned atSilicon dioxide (not shown), thus
Minority carrier surface recombination can be reduced further.Because using thermal oxidation technology to form silicon dioxide
During, can effectively remove the interstitial defect of silicon face, thus be passivated unsaturation dangling bonds, reduce and carry
The surface recombination of stream.
Refer to Figure 12, form the first electrode 206, at described substrate on described anti-reflecting layer 205 surface
Lower surface forms the second electrode 207.
Form the concrete technology of described first electrode 206 and the second electrode 207 for those skilled in the art
Member does not repeats them here known to being.
Refer to Figure 12, the present embodiment uses the monocrystaline silicon solar cell that above-mentioned manufacture method is formed, bag
Including: substrate 200, described substrate is first kind monocrystalline silicon piece；It is positioned at the SiGe on described substrate 200 surface
Virtual substrate 210；It is positioned at the intrinsic layer 203 on described SiGe virtual substrate 210 surface；It is positioned at described
Levy the Second Type doped layer 204 on layer 203 surface；It is positioned at the anti-of described Second Type doped layer 204 surface
Reflecting layer 205；It is positioned at first electrode 206 on described anti-reflecting layer surface；It is positioned at described substrate lower surface
Second electrode 207.
Concrete, in the present embodiment, described substrate 200 is p type single crystal silicon sheet, Second Type doped layer 204
For N-type layer, in described Second Type doped layer, dopant ion includes one or more in phosphorus, arsenic or antimony,
The concentration of described dopant ion is 1E10/cm3~1E20/cm3, the thickness of described Second Type doped layer 204
ForIn other embodiments of the invention, described substrate can also is that p type single crystal silicon sheet,
The most described Second Type doped layer is N-type layer.
Described SiGe virtual substrate 210 includes what the Ge content on substrate 200 surface was gradually increased with thickness
Si1-xGexCushion 201 and be positioned at Si1-xGexRelaxation Si of the Ge stable content on cushion 201 surface1-xGex
Layer 202.
The intrinsic layer 203 being positioned at described SiGe virtual substrate 210 surface is monocrystalline silicon layer, and thickness is
Described anti-reflecting layer 205 is the transparent material of low-refraction coefficient, such as TiO2、SiN、SiO、
Al2O3、SiO2Or CeO2Deng.Also may be used between described Second Type doped layer 204 and anti-reflecting layer 205
It is positioned at having a layer thickness scopeSilicon dioxide (not shown), described silicon dioxide is adopted
Formed by thermal oxidation technology, can effectively remove the interstitial defect of silicon face, thus be passivated unsaturation and hang
Key.
By the explanation of above-described embodiment, professional and technical personnel in the field should be able to be made to be more fully understood that the present invention,
And can reproduce and use the present invention.Those skilled in the art can according to principle specifically described herein
To above-described embodiment as various changes and modifications to be without departing from the spirit and scope of the present invention
Obviously.Therefore, the present invention should not be construed as being limited to above-described embodiment shown in this article, its
Protection domain should be defined by appending claims.
Claims (16)
1. the manufacture method of a monocrystaline silicon solar cell, it is characterised in that including:
Thering is provided substrate, described substrate is first kind monocrystalline silicon piece；
Surface forms SiGe virtual substrate on the substrate；
Intrinsic layer is formed on described SiGe virtual substrate surface；
Form Second Type doped layer on described intrinsic layer surface, described Second Type doped layer is by twin shaft
Stress；
Anti-reflecting layer is formed on described Second Type doped layer surface；
Form the first electrode on described anti-reflecting layer surface, form the second electrode at described substrate lower surface.
The manufacture method of monocrystaline silicon solar cell the most according to claim 1, it is characterised in that formed
The method of described SiGe virtual substrate includes: first substrate surface grow one layer of Ge content with thickness by
The cumulative Si added1-xGexCushion, then at described Si1-xGexBuffer-layer surface one layer of Ge stable content of growth
Relaxation Si1-xGexLayer, described Si1-xGexCushion and relaxation Si1-xGexLayer constitutes SiGe virtual substrate.
The manufacture method of monocrystaline silicon solar cell the most according to claim 1, it is characterised in that described
The formation process of SiGe virtual substrate includes molecular beam epitaxy, ultra-high vacuum CVD or decompressionization
Learn vapour deposition.
The manufacture method of monocrystaline silicon solar cell the most according to claim 1, it is characterised in that described
Intrinsic layer thickness scope is
The manufacture method of monocrystaline silicon solar cell the most according to claim 1, it is characterised in that described
Substrate is n type single crystal silicon sheet, then Second Type doped layer is P-type layer, or described substrate is p-type list
Crystal silicon chip, then Second Type doped layer is N-type layer.
The manufacture method of monocrystaline silicon solar cell the most according to claim 1, it is characterised in that described
The dopant ion of Second Type doped layer includes one or more in phosphorus, arsenic or antimony.
The manufacture method of monocrystaline silicon solar cell the most according to claim 1, it is characterised in that described
The dopant ion of Second Type doped layer includes one or more in boron, gallium or indium.
The manufacture method of monocrystaline silicon solar cell the most according to claim 1, it is characterised in that described
In Second Type doped layer, the concentration range of dopant ion is 1E10/cm3～1E20/cm3。
The manufacture method of monocrystaline silicon solar cell the most according to claim 1, it is characterised in that described
The thickness range of Second Type doped layer is
10. a monocrystaline silicon solar cell, it is characterised in that including:
Substrate, described substrate is first kind single-chip；
It is positioned at the SiGe virtual substrate of the upper surface of described substrate；
It is positioned at the intrinsic layer on described SiGe virtual substrate surface；
It is positioned at the Second Type doped layer on described intrinsic layer surface；
It is positioned at the anti-reflecting layer on described Second Type doped layer surface；
It is positioned at first electrode on described anti-reflecting layer surface；
It is positioned at the second electrode of described substrate lower surface,
In wherein said Second Type doped layer, the concentration range of dopant ion is 1E10/cm3～1E20/cm3。
11. monocrystaline silicon solar cells according to claim 10, it is characterised in that described substrate is N
Type monocrystalline silicon piece, the most described Second Type doped layer is P-type layer；Or described substrate is p type single crystal silicon
Sheet, the most described Second Type doped layer is N-type layer.
12. monocrystaline silicon solar cells according to claim 10, it is characterised in that described SiGe is virtual
Substrate includes the Si that the Ge content of substrate surface is gradually increased with thickness1-xGexCushion and be positioned at Si1-xGex
Relaxation Si of the Ge stable content of buffer-layer surface1-xGexLayer.
13. monocrystaline silicon solar cells according to claim 10, it is characterised in that described intrinsic thickness
Degree scope is
14. monocrystaline silicon solar cells according to claim 10, it is characterised in that described Second Type
The dopant ion of doped layer includes one or more in phosphorus, arsenic or antimony.
15. monocrystaline silicon solar cells according to claim 10, it is characterised in that described Second Type
The dopant ion of doped layer includes one or more in boron, gallium or indium.
16. monocrystaline silicon solar cells according to claim 10, it is characterised in that described Second Type
The thickness range of doped layer is
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