CN103094347B - A kind of bi-material layers owes the carbon nanotube field-effect pipe of folded dual material gate structure - Google Patents
A kind of bi-material layers owes the carbon nanotube field-effect pipe of folded dual material gate structure Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 95
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 83
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 83
- 230000009977 dual effect Effects 0.000 title claims abstract description 56
- 230000005669 field effect Effects 0.000 title claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 230000002950 deficient Effects 0.000 claims description 8
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 11
- 238000005036 potential barrier Methods 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000010835 comparative analysis Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005421 electrostatic potential Methods 0.000 description 2
- 230000005610 quantum mechanics Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 102000029749 Microtubule Human genes 0.000 description 1
- 108091022875 Microtubule Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 210000004688 microtubule Anatomy 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Abstract
The invention discloses the carbon nanotube field-effect pipe that a kind of bi-material layers owes folded dual material gate structure.This field effect transistor comprises: conducting channel (1), source region (2), drain region (3), grid oxic horizon (4), source electrode (S), drain electrode (D), grid (G), described conducting channel (1), source region (2) and drain region (3) all adopt carbon nano-tube material to make, at described conducting channel (1), source region (2) and drain region (3) are outward, the methods such as atomic deposition are adopted to generate one deck grid oxic horizon (4), layer of metal electrode is precipitated again outward at grid oxic horizon (4), the grid (G) of the carbon nanotube field-effect pipe of folded dual material gate structure is owed as bi-material layers, described grid (G) adopts the conducting metal of two kinds of different work functions to make, form the dual material gate that bi-material layers owes the carbon nanotube field-effect pipe of folded dual material gate structure, there is lower leakage current, higher current on/off ratio, leakage more can be suppressed to cause potential barrier and reduce (DIBL) effect, and better can meet the requirement of ITRS ' 10 related performance indicators.
Description
Technical field
The present invention relates to carbon nanotube field-effect pipe field, especially in the structure of carbon nano tube device in the optimization of device performance.
Background technology
From Iijima in 1991 [Iijima S. Helical Microtubules of Graphitic Carbon [J]. Nature, 1991,354 (7): 56-58.] since finding carbon nano-tube, understand its primary attribute and study [the Baughman R H that to make important progress in its potential engineer applied, Zakhidov A A, Heer W A D. Carbon nanotubes-the route toward applications [J]. Science, 2002,297 (5582): 787-792.].Carbon nano-tube (CNT) is the body of seamless, the hollow that the graphene sheet layer formed by carbon atom is rolled into.Its special construction, makes it possess unique character such as electricity, calorifics, mechanics, has important and wide application prospect in nano electron device, field of photovoltaic materials.The carbon nano-tube of different geometry has the band structure of metal mold or semi-conductor type, and metal mold carbon nano-tube can be used as interconnection line, has the advantage that thermal conductivity is high, loss is little; And semiconductor type carbon nano-tube can make active device, such as field effect transistor.This is because carbon nano-tube is compared with usual silica-base material, carrier velocity is very high, can increase current driving ability, improves operating rate and integrated level and cut down power consumption.The high-performance being difficult to realize in usual semiconductor can be reached like this.Such as, use the high frequency and low noise transistor of carbon nano-tube, cut-off frequency [the Lu R F of Terahertz level can be realized, Lu Y P, Lee S Y, et al. Terahertz response in single-walled carbon nanotube transistor:a real-time quantum dynamics simulation [J]. Nanotechnology, 2009,20 (50): 505401 (1-4) .].
First job at room temperature carbon nanotube field-effect pipe (CNTFET) [Tans S J has successfully been made as far back as Tran S J group of TU Delft Polytechnics in 1998, Verschueren A R M, Dekker C. Room-temperature transistor based on a single carbon nanotube [J]. Nature, 1998,393 (7): 49-52.] field effect transistor built based on carbon nano-tube, but in the world is still in the laboratory research stage.Prevailing carbon nanotube field-effect pipe (CNTFET) model having two types at present, one is Schottky barrier CNTFET [Hazeghi A, Krishnamohan T, Wong, H. Schottky-barrier carbon nanotube field-effect transistor modeling [J]. IEEE Transactions on Electron Devices, 2007, 54 (3): 439-445.], in such an embodiment, due to the work function of carbon nano-tube and the work function of both sides electrode different, Schottky barrier is formed in the place of carbon nano-tube two ends and Metal Contact.Just can change this potential barrier by grid voltage, thus control the size of corresponding tunnelling current, because Schottky carbon nanotube field-effect pipe shows dipolar effect, thus greatly reduce device performance.The second is class MOSFET (metal oxide semiconductor field effect tube) type carbon nanotube field-effect pipe [Orouji A A, Arefinia Z. Detailed simulation study of a dual material gate carbon nanotube field-effect transistor [J]. Physica E:Low-dimensional Systems and Nanostructures, 2009, 41 (10): 552-557.], its source electrode, the heavy doping of drain electrode carbon nanotube portion, and be connected with electrode, ohmic contact is made between electrode metal and carbon nano-tube, the work function of doping CNT is different with the work function of raceway groove CNT, potential barrier can be formed in raceway groove after band curvature.
Generally speaking, carbon nano-tube relies on the electrology characteristic of its excellence to have wide prospect in following nanoelectronic application.But because traditional carbon nanotube field-effect pipe there will be bipolar electrode effect, and constantly reduce along with device size, there will be short-channel effect, thus affect device performance.This work, from the angle changing device architecture, proposes a kind of new structure being applicable to improve carbon nanotube field-effect pipe performance.
Summary of the invention
technical problem:the object of the invention is to there will be bipolar electrode effect for traditional carbon nanotube field-effect pipe, and constantly reduce along with device size, there will be short-channel effect and cause device performance decline problem, consider the advantage of owing folded grid (underlap gate) device and dual material gate device, on deficient stacked gate structure basis, grid is adopted to the metal of two kinds of different work functions, to form the dual material gate of MOS, propose the carbon nanometer that a kind of bi-material layers owes folded dual material gate structure
Pipe field effect transistor.
technical scheme:because the current field effect transistor built based on carbon nano-tube is still in the laboratory research stage, for disclosing the Quantum Transport Properties of such device of nanoscale, present invention employs a kind of quantum mechanics model, by being certainly in harmony sub-numerical solution two dimension unbalance distribution (NEGF) equation of full dose and Poisson (Poisson) equation, construct the novel Transport Model of owing folded grid dual material gate CNTFET of the performance being applicable to improve carbon nanotube field-effect pipe, this model comparative analysis is utilized to owe folded grid, the subthreshold slope of dual material gate and deficient folded dual material gate carbon nanotube field-effect pipe, drive current, switch current ratio, drive electric capacity, time delay, and the electrology characteristic such as current gain cutoff frequencies.Result of study shows, owe folded dual material gate device architecture to compare with deficient stacked gate structure with dual material gate device architecture, possesses the advantage of owing folded gate device and dual material gate device, such as: there is lower leakage current, higher current on/off ratio, leakage more can be suppressed to cause potential barrier and to reduce (DIBL) effect, and better can meet the requirement of ITRS ' 10 related performance indicators.
For the depletion region of underlap gate structure after source-contingent charge carrier in conducting channel interface is then widened, extreme influence is transmitted the tunneling rate of charge carrier, reduce the problems such as device on-state performance, on underlap gate architecture basics, grid is adopted to the metal of two kinds of different work functions, to form the dual material gate of MOS, a kind of carbon nanotube field-effect pipe owing folded dual material gate structure is proposed.
The carbon nanotube field-effect pipe that a kind of bi-material layers of the present invention owes folded dual material gate structure comprises: conducting channel, source region, drain region, grid oxic horizon, source electrode, drain electrode, grid; Described conducting channel, source region and drain region all adopt carbon nano-tube material to make, adopt one to levy semiconductor carbon nanometer tube at all, its most mid portion owes the conducting channel of the carbon nanotube field-effect pipe of folded dual material gate structure as bi-material layers, after adopting molecule or metal ion to carry out N-type heavy doping to the two ends of intrinsic semiconductor carbon nano-tube, owe the source region of the carbon nanotube field-effect pipe of folded dual material gate structure, drain region respectively as bi-material layers; Outside described conducting channel, source region and drain region, the methods such as atomic deposition are adopted to generate one deck grid oxic horizon, layer of metal electrode is precipitated again outward at grid oxic horizon, the grid of the carbon nanotube field-effect pipe of folded dual material gate structure is owed as bi-material layers, described grid adopts the conducting metal of two kinds of different work functions to make, and forms the dual material gate that bi-material layers owes the carbon nanotube field-effect pipe of folded dual material gate structure; All there is a segment distance in described source region and drain region with grid respectively, form the deficient folded grid that bi-material layers owes the carbon nanotube field-effect pipe of folded dual material gate structure; Etch source lead hole and drain lead hole respectively being positioned on the grid oxic horizon on source region and drain region, in this source lead hole, prepare described source electrode, the drain electrode in drain lead hole described in preparation; Described grid oxic horizon and grid all in coaxial mode around carbon nano-tube.
Described bi-material layers owes larger than the work function of close drain region metal gate near the metal gate material work function in source region in the dual material gate of the carbon nanotube field-effect pipe of folded dual material gate structure, and the two is isometric, is the half of grid length; The length of described source region and drain region distance grid is respectively
l 1,
l 2, and
l 1with
l 2equal; Described source electrode and drain electrode make by conducting metal.
beneficial effect:meaning of the present invention is to improve carbon nano tube device performance, propose the carbon nanotube field-effect pipe that a kind of bi-material layers owes folded dual material gate structure, and based on unbalance distribution (NEGF) equation and Poisson (Poisson) equation, subthreshold slope that folded grid, dual material gate and bi-material layers owe folded dual material gate carbon nanotube field-effect pipe, drive current, switch current ratio, driving electric capacity, time delay are owed in comparative analysis, and the electrology characteristic such as current gain cutoff frequencies.Result of study shows, bi-material layers is owed folded dual material gate device architecture and is compared with deficient stacked gate structure with dual material gate device architecture, possess and owed folded gate device and dual material gate device advantage separately, there is lower leakage current, higher current on/off ratio, leakage more can be suppressed to cause potential barrier and to reduce (DIBL) effect, and better can meet the requirement of ITRS ' 10 related performance indicators.
Accompanying drawing explanation
Fig. 1 vertical cross-section structural representation of the present invention.
Wherein have: conducting channel 1; Source region 2; Drain region 3; Grid oxic horizon 4; Source S; Drain D; Grid G; Distance length between source region and grid
l 1; Distance length between drain region and grid
l 2.
Embodiment
Thought of the present invention is further described below in conjunction with accompanying drawing.
Fig. 1 is vertical cross-section structural representation of the present invention.
As shown in Figure 1, conducting channel 1, source region 2 and drain region 3 all adopt carbon nano-tube material to make, choose one and levy semiconductor carbon nanometer tube at all, its most mid portion owes the conducting channel 1 of the carbon nanotube field-effect pipe of folded dual material gate structure as bi-material layers, after adopting molecule or metal ion to carry out N-type heavy doping to the two ends of intrinsic semiconductor carbon nano-tube, owe the source region 2 of the carbon nanotube field-effect pipe of folded dual material gate structure, drain region 3 respectively as bi-material layers; Outside conducting channel 1, source region 2 and drain region 3, the methods such as atomic deposition are adopted to generate one deck grid oxic horizon 4, layer of metal electrode is precipitated again outside grid oxic horizon 4, as grid G, grid G adopts the conducting metal of two kinds of different work functions to make, and forms the dual material gate that bi-material layers owes the carbon nanotube field-effect pipe of folded dual material gate structure; All there is a segment distance in source region 2, drain region 3 with grid G, form the deficient folded grid that bi-material layers owes the carbon nanotube field-effect pipe of folded dual material gate structure; Etch source lead hole and drain lead hole respectively being positioned on the grid oxic horizon 4 on source region 2 and drain region 3, in this source lead hole, prepare described source S, in drain lead hole, prepare described drain D; Described grid oxic horizon 4 and grid G all in coaxial mode around carbon nano-tube; Described bi-material layers owes larger than the work function of close drain region 3 metal gate near the metal gate material work function in source region 2 in the dual material gate of the carbon nanotube field-effect pipe of folded dual material gate structure, and the two is isometric, is the half of grid G length; Described source region 2 and drain region 3 are respectively apart from grid G length
l 1,
l 2, and
l 1with
l 2equal; Described source S and drain D make by conducting metal.
Bipolar electrode effect is there will be for traditional carbon nanotube field-effect pipe, and constantly reduce along with device size, there will be short-channel effect and cause device performance decline problem, consider the advantage of owing folded grid (underlap gate) device and dual material gate device, propose a kind of new structure being applicable to optimize carbon nano tube device.For disclosing the Quantum Transport Properties of such device of nanoscale, present invention employs a kind of quantum mechanics model, by being certainly in harmony sub-numerical solution two dimension unbalance distribution (NEGF) equation of full dose and Poisson (Poisson) equation, construct the novel Transport Model of owing folded grid dual material gate carbon nanotube field-effect pipe of the performance being applicable to improve carbon nanotube field-effect pipe.
This model is in harmony calculating certainly based on the electromotive force in carbon nanotube field-effect pipe and charge density.Detailed process is a given original trench electromotive force, NEGF equation is utilized to calculate its charge density, again charge density is substituted into Poisson's equation and solve electrostatic potential in carbon nano-tube channel, then again the electromotive force of trying to achieve is substituted in NEGF equation again and calculate, so iterate until obtain self-consistent solution.The calculating of charge density utilizes unbalance distribution method.The sluggish Green's function of device be [DATTA S. Nanoscale device modeling:The Green ' s function method [J]. Superlattices Microstruct, 2000,28 (4): 253 – 278.]:
(1)
In above formula
a positive dimensionless,
eenergy,
h dcarbon pipe regional Electronic the most adjoining like under Hamiltonian,
be respectively the self energy item of device source and drain electrode contribution, can be obtained by iteration according to surperficial Green's function.Once obtain Green's function, then in device, the electronics of any position and hole density can try to achieve [VENUGOPAL R according to following formula, PAULSSON M, GOASGUEN S, et al. A simple quantum mechanical treatment of scattering nanoscale transistors [J]. J Appl Phys, 2003,93 (9): 5613-5625.]:
(2)
In formula
e ifor the Fermi level of CNT part,
e fD (S)for leaking the Fermi level in (source),
fermi Dirac distribution function,
it is the energy level broadening of source electrode (drain electrode).
The carrier density obtained is updated to self-consistent solution in the Poisson equation of device three-dimensional, the Solving Three-Dimensional poisson Equation of device can be written as with polar coordinates
(3)
In formula
ufor electrostatic potential,
for dielectric constant,
for net charge distribution.
The electromotive force of grid and CNT (carbon nano-tube) contact position
ve is determined by Dirichlet boundary condition
v=e
v g+
Φ cNT–
Φ g, wherein
v gfor grid voltage,
Φ cNTwith
Φ gbe respectively the work function of CNT (carbon nano-tube) and gate electrode.Do not have the boundary of electrode contact to adopt Neumann boundary condition in source and drain contact zone and other, that is the normal component of borderline potential gradient is zero, to meet the electroneutrality condition of device inside built-in field.
Use this model to obtain channel current to be:
(4)
In above formula
eelectron charge,
hplanck constant,
e fD (S)for leaking the Fermi level in (source),
for electronics by the tunnelling coefficient of raceway groove [DATTA S. Nanoscale device modeling:The Green ' s function method [J]. Superlattices Microstruct, 2000,28 (4): 253 – 278.]:
(5)
Utilize quasistatic processing method to assess the high frequency characteristics of carbon nanotube field-effect pipe.The cut-off frequency gram of the intrinsic carbon nano-tube of parasitic capacitance is expressed as:
(6)
Wherein
transfer conductance, and
be intrinsic gate capacitance, can be expressed as:
(7)
(8)
Wherein,
drain current,
drain voltage,
grid voltage, and
it is the total electrical charge of carbon nano-tube.
Under above-mentioned quantum model framework, subthreshold slope that folded grid, dual material gate and bi-material layers owe folded dual material gate carbon nanotube field-effect pipe, drive current, switch current ratio, driving electric capacity, time delay are owed in comparative analysis, and the electrology characteristic such as current gain cutoff frequencies.Result of study shows, bi-material layers is owed folded dual material gate device architecture and is compared with deficient stacked gate structure with dual material gate device architecture, possesses the advantage of owing folded gate device and dual material gate device, such as: there is lower leakage current, higher current on/off ratio, leakage more can be suppressed to cause potential barrier and to reduce (DIBL) effect, and better can meet the requirement of ITRS ' 10 related performance indicators.
Claims (1)
1. bi-material layers owes a carbon nanotube field-effect pipe for folded dual material gate structure, it is characterized in that this field effect transistor comprises: conducting channel (1), source region (2), drain region (3), grid oxic horizon (4), source electrode (S), drain electrode (D), grid (G); Described conducting channel (1), source region (2) and drain region (3) all adopt carbon nano-tube material to make, adopt one to levy semiconductor carbon nanometer tube at all, its most mid portion owes the conducting channel (1) of the carbon nanotube field-effect pipe of folded dual material gate structure as bi-material layers, after adopting molecule or metal ion to carry out N-type heavy doping to the two ends of intrinsic semiconductor carbon nano-tube, owe the source region (2) of the carbon nanotube field-effect pipe of folded dual material gate structure, drain region (3) respectively as bi-material layers; In described conducting channel (1), source region (2) and drain region (3) outward, the methods such as atomic deposition are adopted to generate one deck grid oxic horizon (4), layer of metal electrode is precipitated again outward at grid oxic horizon (4), the grid (G) of the carbon nanotube field-effect pipe of folded dual material gate structure is owed as bi-material layers, described grid (G) adopts the conducting metal of two kinds of different work functions to make, and forms the dual material gate that bi-material layers owes the carbon nanotube field-effect pipe of folded dual material gate structure; All there is a segment distance described source region (2) and drain region (3) with grid (G) respectively, form the deficient folded grid that bi-material layers owes the carbon nanotube field-effect pipe of folded dual material gate structure; Etch source lead hole and drain lead hole respectively being positioned on the grid oxic horizon (4) on source region (2) and drain region (3), in this source lead hole, prepare described source electrode (S), the drain electrode (D) in drain lead hole described in preparation; Described grid oxic horizon (4) and grid (G) all in coaxial mode around carbon nano-tube;
Described bi-material layers owes larger than the work function of close drain region (3) metal gate near the metal gate material work function in source region (2) in the dual material gate of the carbon nanotube field-effect pipe of folded dual material gate structure, and the two is isometric, is the half of grid (G) length; Described source region (2) and drain region (3) distance grid (G) length are respectively
l 1,
l 2, and
l 1with
l 2equal; Described source electrode (S) and drain electrode (D) make by conducting metal.
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| CN110164958B (en) * | 2019-04-25 | 2020-08-04 | 华东师范大学 | Asymmetric reconfigurable field effect transistor |
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| CN101065811A (en) * | 2004-05-25 | 2007-10-31 | 国际商业机器公司 | Method of fabricating a tunneling nanotube field effect transistor |
| CN102214694A (en) * | 2011-05-30 | 2011-10-12 | 西安电子科技大学 | Heterogeneous metal stacked grid strained silicon-germanium on insulator p-channel metal oxide semiconductor field effect tube (SSGOI pMOSFET) device structure |
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| CN101065811A (en) * | 2004-05-25 | 2007-10-31 | 国际商业机器公司 | Method of fabricating a tunneling nanotube field effect transistor |
| CN102214694A (en) * | 2011-05-30 | 2011-10-12 | 西安电子科技大学 | Heterogeneous metal stacked grid strained silicon-germanium on insulator p-channel metal oxide semiconductor field effect tube (SSGOI pMOSFET) device structure |
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Address after: 226000 Room 8319, Building 11, Happy New Town, Gangzha District, Nantong City, Jiangsu Province Patentee after: Nanjing University of Posts and Telecommunications Nantong Institute Limited Address before: 226000 No. 33 Xinkang Road, Gangzhao District, Nantong City, Jiangsu Province Patentee before: Nanjing University of Posts and Telecommunications Nantong Institute Limited |
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