CN109300985A - The single wall MOS of annular grid structure2Nanotube field effect pipe - Google Patents
The single wall MOS of annular grid structure2Nanotube field effect pipe Download PDFInfo
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- CN109300985A CN109300985A CN201810994852.5A CN201810994852A CN109300985A CN 109300985 A CN109300985 A CN 109300985A CN 201810994852 A CN201810994852 A CN 201810994852A CN 109300985 A CN109300985 A CN 109300985A
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- 230000005669 field effect Effects 0.000 title claims abstract description 24
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 32
- 239000002071 nanotube Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 4
- 102100030393 G-patch domain and KOW motifs-containing protein Human genes 0.000 claims 1
- 239000002356 single layer Substances 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005096 rolling process Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000002109 single walled nanotube Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 8
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000004434 sulfur atom Chemical group 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical group 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of single wall MOS of annular grid structure2Nanotube field effect pipe, including conducting channel (1), source region (2), drain region (3), grid oxic horizon (4), source electrode (5), drain electrode (6) and grid made of metal (7), the conducting channel (1), source region (2) and drain region (3) use intrinsic semiconductor single wall MOS2Nanotube production, and source region (2) and drain region (3) are subjected to N-type heavy doping using molecule or metal ion.The invention is different from usual MOS2The single layer plane MOS that field-effect tube uses2Structure is used with MOS2For the new structure of the single-walled nanotube of material, single layer plane MOS is overcome2Channel material vulnerable to corrugation and rolling influence, successfully managed edge effect and device composition seriously threatened.
Description
Technical field
The present invention relates to a kind of MOS2Nanotube field effect pipe, the single wall MOS of especially a kind of annular grid structure2Nanotube
Field-effect tube.
Background technique
Molybdenum disulfide (MOS2) interacted the stratiform that forms by the S-Mo-S layer of vertical stacking by weak Van der Waals force
Material.Each single layer is by two hexagon planes of S atom and the hexagon set of planes for the Mo atom being clipped between S atom layer
At.Insertion by the mechanical stripping based on adhesive tape or based on lithium can obtain stable single layer MOS2.Body MOS2 (Bulk
MOS2) it is the indirect semiconductor that band gap is 1.2eV, and single layer MOS2It is the direct semiconductor that band gap is 1.8eV.2010 first
Secondary successful single layer MOS2The visual presentation of transistor uses HfO2As gate dielectric, it is to demonstrate mobility at room temperature
The single layer MOS of 200cm 2V-1s-12Transistor, ON/OFF electric current ratio are more than 1 × 10 8, and subthreshold swing (SS) is 74mV/
dec。
From single layer MOS2Since Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device and logic are demonstrated, transition
Metal dichalcogenides (MX2: wherein M represents transition metal, and X represents chalcogen) cause MOS device community very
More concerns.This material has apparent advantage compared with graphene, because their form of single sheet has non-zero band gap, this is right
It is enforceable in switch application.
Although MOS2Field-effect tube has by its excellent electrology characteristic in the following nanoelectronic application field wide
Prospect, but single layer MOS2Vulnerable to corrugation and the influence rolled, this can obvious limit device for single layer channel as nanotube
Performance, and its edge effect also also constitutes device performance and seriously threatens.
Summary of the invention
Goal of the invention: the technical problem to be solved in the present invention is to provide a kind of single wall MOS of annular grid structure2Nanotube field
Effect pipe, it can overcome single layer MOS2Channel material vulnerable to corrugation and rolling influence, successfully managed edge effect
Device composition is seriously threatened.
Technical solution: the single wall MOS of annular grid structure of the present invention2Nanotube field effect pipe, including conducting channel,
Source region, drain region, grid oxic horizon, source electrode, drain electrode and grid made of metal, it is characterised in that: the conducting channel, source
Area and drain region are single wall MOS2Nanotube, grid oxic horizon are looped around conducting channel, source region, the appearance in drain region in coaxial fashion
Face, grid are looped around the outer surface of grid oxic horizon in coaxial fashion.
In order to carrier can preferably stable transmission, the conducting channel, source region and drain region are that a basic sign is partly led
Body single wall MOS2Nanotube.
In order to obtain more efficient carrier concentration, preferable electrology characteristic is realized, the source region and drain region use
Molecule or metal ion carry out N-type heavy doping.
In order to reduce drain current, and as the increase of tube diameters has smaller carrier effective mass and higher
On-state current, MOS2 nanometers of the composition conducting channel, source region and the single wall in drain region tube thickness can be limited to 2.5-
5nm。
When predicting quasi- trajectory electric current using mean free path calculating, if by the length limitation of the conducting channel
In 100-200nm, the trajectory value in drain current reduces 62%-75%.
Heretofore described grid oxic horizon can be the high-K gate oxide layer made of atomic deposition method.
The utility model has the advantages that the present invention is applied in field-effect tube structure, MOS can be significantly improved2The performance of device, in ON state
Performance good enough is shown in terms of electric current, on/off ratio, mutual conductance, inherent delay time and cutoff frequency, and can be used for 10nm skill
Art node.
Detailed description of the invention
Fig. 1 is view in transverse section of the invention；
Fig. 2 is the A-A longitdinal cross-section diagram along Fig. 1.
Specific embodiment
As shown in Figure 1, the single wall MOS of annular grid structure of the present invention2The conducting channel 1 of nanotube field effect pipe, source region 2
An intrinsic semiconductor single wall MOS is used with drain region 32Nanotube production, the conducting channel 1 that most middle section is used as, both ends are adopted
After carrying out N-type heavy doping with molecule or metal ion, respectively as the single wall MOS of annular grid structure2Nanotube field effect pipe
Source region 2 and drain region 3；Outside the conducting channel 1, source region 2 and drain region 3, one layer of high-K gate is generated using atomic deposition method
Oxide layer 4, the single wall MOS in 4 one layer of metal electrode of outer reprecipitation of grid oxic horizon, as annular grid structure2Nanotube field effect
Should pipe grid 7, etch source lead hole respectively on the grid oxic horizon 4 being located on source region 2 and drain region 3 and drain electrode drawn
String holes prepares the source electrode 5 in the source lead hole, and the drain electrode 6 is prepared in drain lead hole.The grid
Oxide layer 4 and grid 7 are all in coaxial fashion around single wall MOS2Nanotube.Shown in Fig. 2 is the single wall MOS of annular grid structure2
The longitdinal cross-section diagram of nanotube field effect pipe A-A along Fig. 1, the field-effect tube are hollow structures, and tube wall is from the inside to the outside by concentric
Circular single wall MOS2Nanotube, high-K gate oxide layer and metal gates are constituted.The invention is different from usual MOS2Field-effect tube
The single layer plane MOS of use2Structure uses one kind with MOS2For the new structure of the single-walled nanotube of material, single layer is overcome
Plane MOS2Channel material vulnerable to corrugation and rolling influence, successfully managed the serious prestige that edge effect constitutes device
The side of body, the MOS of the structure2Nanotube is realized in the lab.
In order to verify the technical effects of the present invention, by being in harmony the sub- numerical solution two dimension unbalance distribution (NEGF) of full dose certainly
Equation and Poisson (Poisson) equation construct and are suitable for improving MOS2The single wall of the annular grid structure of the performance of field-effect tube
MOS2The Transport Model of nanotube field effect pipe.The model based in single wall MOS2 nanotube field effect pipe potential and charge it is close
Degree is in harmony calculating certainly.Detailed process is to give a grid voltage in grid 7, goes out its charge density using NEGF equation calculation,
Charge density substitution Poisson's equation is solved into single wall MOS again2Electrostatic potential in nanotube channel, the potential that then will be acquired again
Again it substitutes into NEGF equation and is calculated, iteration is until obtaining self-consistent solution repeatedly.The calculating of charge density is benefit
With unbalance distribution method.The sluggish Green's function of device be [DATTA S.Nanoscale device modeling:
The Green’s function method[J].Superlattices Microstruct,2000,28(4): 253–
278.]:
G (E)=[EI-H- ∑S-∑D]-1. (1)
In formula, E is the potential difference of source electrode 2 and drain electrode 3, and I is unit matrix, ΣSAnd ΣDRespectively device source and drain electrode
The self energy item of contribution can be found out according to surface Green's function by iteration.Extended matrix ГSГDWith spectrum density ASADRespectively
[VENUGOPAL R,PAULSSON M,GOASGUEN S,et al.A simple quantum mechanical
treatment of scattering nanoscale transistors[J].J Appl Phys,2003,93(9):5613-
5625.]:
For solving the density matrix of Poisson's equation are as follows:
Wherein A (Ek, x) and it is spectral density matrix, Ek, x is the energy of conductive level, and η is the chemical potential of contact, f0It is Fermi
Function.
The carrier density obtained by NEGF equation calculation is put into Poisson's equation, to calculate more accurate current potential of being in harmony certainly
Conjecture value goes to calculate better ntot, for calculating the convergency value of transmission matrix T (E) are as follows:
T (E)=Trace [ASΓD]=Trace [ADΓS]. (5)
Thus the electric current I of conducting channel 1 can be calculatedDAre as follows:
Wherein e is electron charge, and h is Planck's constant, fSAnd fDIt is the Fermi function in source electrode and drain electrode contact, ηSWith
ηDIt is source and chemical potential respectively, number 4 indicates single wall MOS2Spin degeneracy and paddy degeneracy in nanotube.
Channel conductance can calculate:
Wherein gvIt is paddy degeneracy, number 2 is spin degeneracy, and f is the Fermi function.
Result of study shows that the single wall MOS2 nanometer tube device structure of annular grid structure is compared with traditional structure, has
Many advantages, such as: in on-state current, on/off ratio, mutual conductance, it is good enough to show in terms of inherent delay time and cutoff frequency
Performance, can be used for 10nm technology node.In single wall MOS2Nanotube has smaller when 2.5-5nm with the increase of diameter
Carrier effective mass and higher on-state current, and drain current is reduced.Quasi- bullet is predicted using mean free path calculating
Road electric current observes that long channel length reduces 62%-75% for the trajectory value in the drain current of 100-200nm.
Claims (6)
1. a kind of single wall MOS of annular grid structure2Nanotube field effect pipe, including conducting channel (1), source region (2), drain region (3),
Grid oxic horizon (4), source electrode (5), drain electrode (6) and grid made of metal (7), it is characterised in that: the conducting channel
(1), source region (2) and drain region (3) are single wall MOS2Nanotube, grid oxic horizon (4) are looped around conducting channel in coaxial fashion
(1), source region (2), drain region (3) outer surface, grid (7) is looped around the outer surface of grid oxic horizon (4) in coaxial fashion.
2. the single wall MOS of annular grid structure according to claim 12Nanotube field effect pipe, it is characterised in that: described
Conducting channel (1), source region (2) and drain region (3) are an intrinsic semiconductor single wall MOS2Nanotube.
3. the single wall MOS of annular grid structure according to claim 12Nanotube field effect pipe, it is characterised in that: described
Source region (2) and drain region (3) are using molecule or metal ion progress N-type heavy doping.
4. the single wall MOS of annular grid structure according to claim 12Nanotube field effect pipe, it is characterised in that: described
The single wall MOS2 nanotube of conducting channel (1), source region (2) and drain region (3) is constituted with a thickness of 2.5-5nm.
5. single wall MOS according to claim 12Nanotube field effect pipe, it is characterised in that: the conducting channel (1)
Length is 100-200nm.
6. according to claim 1 to single wall MOS described in 52Nanotube field effect pipe, it is characterised in that: the grid oxic horizon
It (4) is high-K gate oxide layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110186979A (en) * | 2019-05-28 | 2019-08-30 | 南京邮电大学 | A kind of field effect transistor applied to highly sensitive gas sensor |
| CN110459562A (en) * | 2019-07-30 | 2019-11-15 | 武汉华星光电半导体显示技术有限公司 | Foldable display panel and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137691A (en) * | 2011-11-29 | 2013-06-05 | 西安电子科技大学 | Field effect transistor and manufacture method thereof |
| US20150129958A1 (en) * | 2013-11-12 | 2015-05-14 | Renesas Electronics Corporation | Semiconductor apparatus |
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2018
- 2018-08-29 CN CN201810994852.5A patent/CN109300985A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137691A (en) * | 2011-11-29 | 2013-06-05 | 西安电子科技大学 | Field effect transistor and manufacture method thereof |
| US20150129958A1 (en) * | 2013-11-12 | 2015-05-14 | Renesas Electronics Corporation | Semiconductor apparatus |
Non-Patent Citations (1)
| Title |
|---|
| AMRETASHIS SENGUPTA ET AL: ""Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors"", 《JOURNAL OF APPLIED PHYSICS》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110186979A (en) * | 2019-05-28 | 2019-08-30 | 南京邮电大学 | A kind of field effect transistor applied to highly sensitive gas sensor |
| CN110459562A (en) * | 2019-07-30 | 2019-11-15 | 武汉华星光电半导体显示技术有限公司 | Foldable display panel and preparation method thereof |
| CN110459562B (en) * | 2019-07-30 | 2021-11-23 | 武汉华星光电半导体显示技术有限公司 | Foldable display panel and manufacturing method thereof |
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| CB03 | Change of inventor or designer information |
Inventor after: Jiang Bin Inventor after: Shen Zhihao Inventor after: Zhao Jianfei Inventor after: Wang Wei Inventor before: Shen Zhihao Inventor before: Zhao Jianfei Inventor before: Jiang Bin Inventor before: Wang Wei |
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