CN103094347A - Carbon nano tube field effect tube of double-material underlap heterogeneous grid structure - Google Patents
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Abstract
The invention discloses a carbon nano tube field effect tube of a double-material underlapped heterogeneous grid structure. The field effect tube comprises a conductive ditch channel (1), a source area (2), a drain area (3), a grid electrode oxidation layer (4), a source electrode (S), a drain electrode (D) and a grid electrode (G). The conductive ditch channel (1), the source area (2) and the drain area (3) are all made of carbon nano tube materials. The grid electrode oxidation layer (4) is generated outside the conductive ditch channel (1), the source area (2) and the drain area (3) by utilizing methods of atom deposition and the like. A metal electrode layer is further precipitated outside the grid electrode oxidation layer (4). As a grid electrode (G) of the carbon nano tube field effect tube of the double-material underlapped heterogeneous grid structure, the grid electrode (G) utilizes two kinds of conductive metal with different work functions for manufacture so that a heterogeneous grid of the double-material underlapped heterogeneous grid structure is formed. Low leakage current ratio and high current switch ratio are achieved, a drain induced barrier lowering (DIBL) effect is restrained, and related performance index requirements of ITRS'10 can be well met.
Description
Technical field
The present invention relates to carbon nanotube field-effect pipe field, especially in the structure of carbon nano tube device to aspect the optimization of device performance.
Background technology
From Iijima[Iijima S in 1991. Helical Microtubules of Graphitic Carbon[J]. Nature, 1991,354 (7): 56-58.] since finding carbon nano-tube, understand its primary attribute and studying its potential engineering application facet [Baughman R H that makes important progress, Zakhidov A A, Heer W A D. Carbon nanotubes-the route toward applications[J]. Science, 2002,297 (5582): 787-792.].Carbon nano-tube (CNT) is the body of seamless, the hollow that is rolled into of the graphene sheet layer that formed by carbon atom.Its special construction, make it possess the character such as unique electricity, calorifics, mechanics, in nano electron device, field of photovoltaic materials, important and wide application prospect arranged.The carbon nano-tube of different geometries has the band structure of metal mold or semi-conductor type, and the metal mold carbon nano-tube can be used as interconnection line, has advantages of that thermal conductivity is high, loss is little; And semiconductor type carbon nano-tube can be made active device, such as field effect transistor.This is that carrier velocity is very high because carbon nano-tube is compared with common silica-base material, can increase current driving ability, improves operating rate and integrated level and cut down power consumption.Can reach like this and usually in semiconductor, be difficult to the high-performance realized.For example, use the high frequency and low noise transistor of carbon nano-tube, can realize cut-off frequency [the Lu R F of Terahertz level, Lu Y P, Lee S Y, et al. Terahertz response in single-walled carbon nanotube transistor:a real-time quantum dynamics simulation[J]. Nanotechnology, 2009,20 (50): 505401 (1-4) .].
Successfully made at room temperature carbon nanotube field-effect pipe (CNTFET) [Tans S J of first job as far back as Tran S J group of TU Delft Polytechnics in 1998, Verschueren A R M, Dekker C. Room-temperature transistor based on a single carbon nanotube[J]. Nature, 1998,393 (7): 49-52.] field effect transistor built based on carbon nano-tube, but in the world is still in the laboratory research stage.Current prevailing carbon nanotube field-effect pipe (CNTFET) model that has two types, a kind of is Schottky barrier CNTFET[Hazeghi A, Krishnamohan T, Wong, H. Schottky-barrier carbon nanotube field-effect transistor modeling[J]. IEEE Transactions on Electron Devices, 2007, 54 (3): 439-445.], in this structure, because the work function of the work function of carbon nano-tube and both sides electrode is different, place in carbon nano-tube two ends and Metal Contact forms Schottky barrier.Just can change this potential barrier by grid voltage, thereby control the size of corresponding tunnelling current, because Schottky carbon nanotube field-effect pipe shows dipolar effect, thereby greatly reduce device performance.The second is class MOSFET (metal oxide semiconductor field effect tube) type carbon nanotube field-effect pipe [Orouji A A, Arefinia Z. Detailed simulation study of a dual material gate carbon nanotube field-effect transistor[J]. Physica E:Low-dimensional Systems and Nanostructures, 2009, 41 (10): 552-557.], its source electrode, the heavy doping of drain electrode carbon nano-tube part, and be connected with electrode, make ohmic contact between electrode metal and carbon nano-tube, the work function of doping CNT is different with the work function of raceway groove CNT, can in raceway groove, form potential barrier after band curvature.
Generally speaking, carbon nano-tube relies on its excellent electrology characteristic, in following nanoelectronic application, wide prospect is arranged.But because traditional carbon nanotube field-effect pipe there will be bipolar electrode effect, and, along with device size constantly dwindles, there will be short-channel effect, thereby affect device performance.This work, from changing the angle of device architecture, proposes a kind of new structure that is applicable to improve carbon nanotube field-effect pipe performance.
Summary of the invention
technical problem:the objective of the invention is to there will be bipolar electrode effect for traditional carbon nanotube field-effect pipe, and along with device size constantly dwindles, there will be short-channel effect and cause device performance decline problem, considered to owe the advantage of folded grid (underlap gate) device and heterogeneous gate device, owing on the stacked gate structure basis, grid is adopted to the metal of two kinds of different work functions, to form the heterogeneous grid of MOS, propose the carbon nanometer that a kind of pair of material owed folded heterogeneous grid structure
The pipe field effect transistor.
technical scheme:due to the field effect transistor built based on carbon nano-tube at present still in the laboratory research stage, for disclosing the Quantum Transport Properties of such device of nanoscale, the present invention has adopted a kind of quantum mechanics model, solve two-dimentional non-equilibrium Green's function (NEGF) equation and Poisson (Poisson) equation by certainly being in harmony full dose subnumber value, built the novel Transport Model of owing the folded heterogeneous grid CNTFET of grid of the performance that is applicable to improve the carbon nanotube field-effect pipe, utilize this model comparative analysis to owe folded grid, heterogeneous grid and the subthreshold slope of owing folded heterogeneous grid carbon nanotube field-effect pipe, drive current, switch current ratio, drive electric capacity, time delay, and the electrology characteristic such as current gain cutoff frequencies.Result of study shows, owe folded heterogeneous gate device structure and heterogeneous gate device structure and owe stacked gate structure and compare, possessed the advantage of owing folded gate device and heterogeneous gate device, for example: there is lower leakage current, higher current on/off ratio, more can suppress leakage and cause potential barrier reduction (DIBL) effect, and can better meet ITRS ' 10 correlated performance index requests.
To greatly affect the tunneling rate of transmission charge carrier for underlap gate structure at source-depletion region after the contingent charge carrier in conducting channel interface is widened, reduce the problems such as device conducting state performance, on underlap gate architecture basics, grid is adopted to the metal of two kinds of different work functions, to form the heterogeneous grid of MOS, a kind of carbon nanotube field-effect pipe of owing folded heterogeneous grid structure is proposed.
The carbon nanotube field-effect pipe that a kind of pair of material of the present invention owed folded heterogeneous grid structure comprises: conducting channel, source region, drain region, grid oxic horizon, source electrode, drain electrode, grid; Described conducting channel, source region and drain region all adopt carbon nano-tube material to make, adopt one to levy semiconductor carbon nanometer tube at all, its mid portion is owed the conducting channel of the carbon nanotube field-effect pipe of folded heterogeneous grid structure as two materials, after adopting molecule or metal ion to carry out N-type heavy doping to the two ends of intrinsic semiconductor carbon nano-tube, source region, the drain region of owing the carbon nanotube field-effect pipe of folded heterogeneous grid structure as two materials respectively; Outside described conducting channel, source region and drain region, adopt method generation one deck grid oxic horizons such as atomic deposition, precipitate again the layer of metal electrode outside grid oxic horizon, owe the grid of the carbon nanotube field-effect pipe of folded heterogeneous grid structure as two materials, described grid adopts the conducting metal of two kinds of different work functions to make, and forms the heterogeneous grid that two materials are owed the carbon nanotube field-effect pipe of folded heterogeneous grid structure; All there is a segment distance in described source region and drain region with grid respectively, form two materials owe folded heterogeneous grid structure the carbon nanotube field-effect pipe owe folded grid; Difference etching one source pole fairlead and drain lead hole on the grid oxic horizon be positioned on source region and drain region, the described source electrode of preparation in this source lead hole, the described drain electrode of preparation in the drain lead hole; Described grid oxic horizon and grid all in coaxial mode around carbon nano-tube.
It is larger than the work function of close drain region metal gate that the described pair of material owed in the heterogeneous grid of carbon nanotube field-effect pipe of folded heterogeneous grid structure the metal gate material work function near source region, and the two is isometric, is half of grid length; Described source region and drain region are respectively apart from the length of grid
l 1,
l 2, and
l 1with
l 2equate; Described source electrode and drain electrode are made by conducting metal.
beneficial effect:meaning of the present invention is to improve the carbon nano tube device performance, propose a kind of pair of material and owed the carbon nanotube field-effect pipe of folded heterogeneous grid structure, and based on non-equilibrium Green's function (NEGF) equation and Poisson (Poisson) equation, comparative analysis owe subthreshold slope, drive current, switch current ratio, driving electric capacity, the time delay that folded grid, heterogeneous grid and two material are owed folded heterogeneous grid carbon nanotube field-effect pipe, and the electrology characteristic such as current gain cutoff frequencies.Result of study shows, two materials are owed folded heterogeneous gate device structure and heterogeneous gate device structure and are owed stacked gate structure and compare, possessed and owed folded gate device and heterogeneous gate device advantage separately, there is lower leakage current, higher current on/off ratio, more can suppress leakage and cause potential barrier reduction (DIBL) effect, and can better meet ITRS ' 10 correlated performance index requests.
The accompanying drawing explanation
Fig. 1 vertical cross-section structural representation of the present invention.
Wherein have: conducting channel 1; Source region 2; Drain region 3; Grid oxic horizon 4; Source S; Drain D; Grid G; Between source region and grid apart from length
l 1; Between drain region and grid apart from length
l 2.
Embodiment
Further describe thought of the present invention below in conjunction with accompanying drawing.
Fig. 1 is vertical cross-section structural representation of the present invention.
As shown in Figure 1, conducting channel 1, source region 2 and drain region 3 all adopt carbon nano-tube material to make, choose one and levy semiconductor carbon nanometer tube at all, its mid portion is owed the conducting channel 1 of the carbon nanotube field-effect pipe of folded heterogeneous grid structure as two materials, after adopting molecule or metal ion to carry out N-type heavy doping to the two ends of intrinsic semiconductor carbon nano-tube, source region 2, the drain region 3 of owing the carbon nanotube field-effect pipe of folded heterogeneous grid structure as two materials respectively; Outside conducting channel 1, source region 2 and drain region 3, adopt method generation one deck grid oxic horizons 4 such as atomic deposition, precipitate again the layer of metal electrode outside grid oxic horizon 4, as grid G, grid G adopts the conducting metal of two kinds of different work functions to make, and forms the heterogeneous grid that two materials are owed the carbon nanotube field-effect pipe of folded heterogeneous grid structure; All there is a segment distance in source region 2, drain region 3 with grid G, form two materials owe folded heterogeneous grid structure the carbon nanotube field-effect pipe owe folded grid; Difference etching one source pole fairlead and drain lead hole on the grid oxic horizon 4 be positioned on source region 2 and drain region 3, the described source S of preparation in this source lead hole, the described drain D of preparation in the drain lead hole; Described grid oxic horizon 4 and grid G all in coaxial mode around carbon nano-tube; It is larger than the work function of close drain region 3 metal gates that the described pair of material owed in the heterogeneous grid of carbon nanotube field-effect pipe of folded heterogeneous grid structure the metal gate material work function near source region 2, and the two is isometric, is half of grid G length; Described source region 2 and drain region 3 are respectively apart from grid G length
l 1,
l 2, and
l 1with
l 2equate; Described source S and drain D are made by conducting metal.
There will be bipolar electrode effect for traditional carbon nanotube field-effect pipe, and along with device size constantly dwindles, there will be short-channel effect and cause device performance decline problem, consider to owe the advantage of folded grid (underlap gate) device and heterogeneous gate device, proposed a kind of new structure that is applicable to optimize carbon nano tube device.For disclosing the Quantum Transport Properties of such device of nanoscale, the present invention has adopted a kind of quantum mechanics model, solve two-dimentional non-equilibrium Green's function (NEGF) equation and Poisson (Poisson) equation by certainly being in harmony full dose subnumber value, built the novel Transport Model of owing the folded heterogeneous grid carbon nanotube field-effect of grid pipe of the performance that is applicable to improve the carbon nanotube field-effect pipe.
The electromotive force of this model based in the carbon nanotube field-effect pipe and charge density certainly be in harmony calculating.Detailed process is a given original trench electromotive force, utilize the NEGF equation to calculate its charge density, again charge density substitution Poisson's equation is solved to the electrostatic potential in carbon nano-tube channel, then again the electromotive force of trying to achieve is calculated in substitution NEGF equation again, so iterated until obtain self-consistent solution.The calculating of charge density is to utilize non-equilibrium green function method.The sluggish Green's function of device is [DATTA S. Nanoscale device modeling:The Green ' s function method[J]. Superlattices Microstruct, 2000,28 (4): 253 – 278.]:
In above formula
a positive dimensionless,
eenergy,
h dterritory, carbon area under control electronics the most adjoining like under Hamiltonian,
be respectively the self energy item of device source and drain electrode contribution, can obtain by iteration according to surperficial Green's function.Once obtain Green's function, in device, the electronics of arbitrary position and hole density can be tried to achieve according to following formula [VENUGOPAL R, PAULSSON M, GOASGUEN S, et al. A simple quantum mechanical treatment of scattering nanoscale transistors[J]. J Appl Phys, 2003,93 (9): 5613-5625.]:
(2)
In formula
e ifor the Fermi level of CNT part,
e fD (S)for leaking the Fermi level in (source),
the Fermi Dirac distribution function,
it is the energy level broadening of source electrode (drain electrode).
The carrier density of obtaining is updated to self-consistent solution in the Poisson equation of device three-dimensional, the Solving Three-Dimensional poisson Equation of device can be written as with polar coordinates
In formula
ufor electrostatic potential,
for dielectric constant,
for net charge distributes.
The electromotive force of grid and CNT (carbon nano-tube) contact position
vdetermine e by the Dirichlet boundary condition
v=e
v g+
Φ cNT–
Φ g, wherein
v gfor grid voltage,
Φ cNTwith
Φ gbe respectively the work function of CNT (carbon nano-tube) and gate electrode.Missing contact area does not have the boundary of electrode contact to adopt the Neumann boundary condition in source with other, and the normal component that is to say borderline potential gradient is zero, to meet the electroneutrality condition of device inside built-in field.
Use this model to obtain channel current to be:
In above formula
eelectron charge,
hplanck constant,,
e fD (S)for leaking the Fermi level in (source),
for electronics passes through the tunnelling coefficient [DATTA S. Nanoscale device modeling:The Green ' s function method[J] of raceway groove. Superlattices Microstruct, 2000,28 (4): 253 – 278.]:
Utilize the quasistatic processing method to assess the high frequency characteristics of carbon nanotube field-effect pipe.The cut-off frequency gram of the intrinsic carbon nano-tube of parasitic capacitance is expressed as:
(6)
Wherein
transfer conductance, and
be the intrinsic gate capacitance, can be expressed as respectively:
Wherein,
drain current,
drain voltage,
grid voltage, and
it is the total electrical charge of carbon nano-tube.
Under above-mentioned quantum model framework, comparative analysis owe subthreshold slope, drive current, switch current ratio, driving electric capacity, the time delay that folded grid, heterogeneous grid and two material are owed folded heterogeneous grid carbon nanotube field-effect pipe, and the electrology characteristic such as current gain cutoff frequencies.Result of study shows, two materials are owed folded heterogeneous gate device structure and heterogeneous gate device structure and are owed stacked gate structure and compare, possessed the advantage of owing folded gate device and heterogeneous gate device, for example: there is lower leakage current, higher current on/off ratio, more can suppress leakage and cause potential barrier reduction (DIBL) effect, and can better meet ITRS ' 10 correlated performance index requests.
Claims (2)
1. two materials are owed the carbon nanotube field-effect pipe of folded heterogeneous grid structure, it is characterized in that this field effect transistor comprises: conducting channel (1), source region (2), drain region (3), grid oxic horizon (4), source electrode (S), drain electrode (D), grid (G); Described conducting channel (1), source region (2) and drain region (3) all adopt carbon nano-tube material to make, adopt one to levy semiconductor carbon nanometer tube at all, its mid portion is owed the conducting channel (1) of the carbon nanotube field-effect pipe of folded heterogeneous grid structure as two materials, after adopting molecule or metal ion to carry out N-type heavy doping to the two ends of intrinsic semiconductor carbon nano-tube, source region (2), drain region (3) of owing the carbon nanotube field-effect pipe of folded heterogeneous grid structure as two materials respectively; Outside described conducting channel (1), source region (2) and drain region (3), adopt method generation one deck grid oxic horizons (4) such as atomic deposition, precipitate again the layer of metal electrode outside grid oxic horizon (4), owe the grid (G) of the carbon nanotube field-effect pipe of folded heterogeneous grid structure as two materials, described grid (G) adopts the conducting metal of two kinds of different work functions to make, and forms the heterogeneous grid that two materials are owed the carbon nanotube field-effect pipe of folded heterogeneous grid structure; All there is a segment distance described source region (2) and drain region (3) with grid (G) respectively, form two materials owe folded heterogeneous grid structure the carbon nanotube field-effect pipe owe folded grid; In the grid oxic horizon (4) upper etching one source pole fairlead and the drain lead hole respectively that are positioned on source region (2) and drain region (3), preparation described source electrode (S) in this source lead hole, preparation described drain electrode (D) in the drain lead hole; Described grid oxic horizon (4) and grid (G) all in coaxial mode around carbon nano-tube.
2. according to claim 1 pair of material owed the carbon nanotube field-effect pipe of folded heterogeneous grid structure, it is characterized in that described pair of material owed in the heterogeneous grid of carbon nanotube field-effect pipe of folded heterogeneous grid structure the metal gate material work function near source region (2) larger than the work function of close drain region (3) metal gate, and the two is isometric, be half of grid (G) length; Described source region (2) and drain region (3) are respectively apart from grid (G) length
l 1,
l 2, and
l 1with
l 2equate; Described source electrode (S) and drain electrode (D) are made by conducting metal.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428738A (en) * | 2018-03-27 | 2018-08-21 | 南京邮电大学 | A kind of deficient stacked gate structure black phosphorus field-effect tube |
| CN109374712A (en) * | 2018-08-29 | 2019-02-22 | 南京邮电大学 | MOS applied to biosensor2Material dielectric modulates field-effect tube |
| CN110164958A (en) * | 2019-04-25 | 2019-08-23 | 华东师范大学 | A kind of asymmetric restructural field effect transistor |
| CN110634946A (en) * | 2019-10-28 | 2019-12-31 | 中证博芯（重庆）半导体有限公司 | Enhanced type heterogeneous metal gate AlGaN/GaN MOS-HEMT device and preparation method thereof |
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| CN101065811A (en) * | 2004-05-25 | 2007-10-31 | 国际商业机器公司 | Method of fabricating a tunneling nanotube field effect transistor |
| CN102214694A (en) * | 2011-05-30 | 2011-10-12 | 西安电子科技大学 | Heterogeneous metal stacked grid strained silicon-germanium on insulator p-channel metal oxide semiconductor field effect tube (SSGOI pMOSFET) device structure |
| CN102629627A (en) * | 2012-04-16 | 2012-08-08 | 清华大学 | Heterogeneous gate tunneling transistor and forming method thereof |
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| US20050275045A1 (en) * | 2004-06-11 | 2005-12-15 | International Business Machines Corporation | Low capacitance fet for operation at subthreshold voltages |
| CN102214694A (en) * | 2011-05-30 | 2011-10-12 | 西安电子科技大学 | Heterogeneous metal stacked grid strained silicon-germanium on insulator p-channel metal oxide semiconductor field effect tube (SSGOI pMOSFET) device structure |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428738A (en) * | 2018-03-27 | 2018-08-21 | 南京邮电大学 | A kind of deficient stacked gate structure black phosphorus field-effect tube |
| CN109374712A (en) * | 2018-08-29 | 2019-02-22 | 南京邮电大学 | MOS applied to biosensor2Material dielectric modulates field-effect tube |
| CN110164958A (en) * | 2019-04-25 | 2019-08-23 | 华东师范大学 | A kind of asymmetric restructural field effect transistor |
| CN110164958B (en) * | 2019-04-25 | 2020-08-04 | 华东师范大学 | Asymmetric reconfigurable field effect transistor |
| CN110634946A (en) * | 2019-10-28 | 2019-12-31 | 中证博芯（重庆）半导体有限公司 | Enhanced type heterogeneous metal gate AlGaN/GaN MOS-HEMT device and preparation method thereof |
| CN110634946B (en) * | 2019-10-28 | 2023-04-28 | 中证博芯（重庆）半导体有限公司 | Enhanced heterogeneous metal gate AlGaN/GaN MOS-HEMT device and preparation method thereof |
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