CN103078042B - The aggregate that semiconductor device encapsulates, the aggregate of semiconductor device and the manufacture method of semiconductor device - Google Patents
The aggregate that semiconductor device encapsulates, the aggregate of semiconductor device and the manufacture method of semiconductor device Download PDFInfo
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- CN103078042B CN103078042B CN201210411021.3A CN201210411021A CN103078042B CN 103078042 B CN103078042 B CN 103078042B CN 201210411021 A CN201210411021 A CN 201210411021A CN 103078042 B CN103078042 B CN 103078042B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000005538 encapsulation Methods 0.000 claims abstract description 68
- 239000011347 resin Substances 0.000 claims abstract description 34
- 229920005989 resin Polymers 0.000 claims abstract description 34
- 238000000465 moulding Methods 0.000 claims abstract description 24
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 150000002148 esters Chemical class 0.000 claims description 13
- 238000007493 shaping process Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 235000008429 bread Nutrition 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention provides the aggregate of semiconductor device encapsulation, the aggregate of semiconductor device and the manufacture method of semiconductor device.For making it possible to increase the quantity of the semiconductor device encapsulation be maintained on carrier, improve the aggregate of the semiconductor device encapsulation of the manufacture efficiency of semiconductor device.The regulation region of first shell be shaped by white resin of the multiple contacts kept by warpage is covered by the second housing defined with the resin of black, and supports multiple second housing to high-density by secondary forming carrier.One or both of the linking part of contact and first, second shell is by embedding mould molding and integrated.
Description
Technical field
The present invention relates to the aggregate of semiconductor encapsulation, the aggregate of semiconductor device and the manufacture method of semiconductor device.
Background technology
In the past, the known manufacture method (with reference to Japanese Unexamined Patent Publication 2011-138849 publication (paragraph 0067,0072 ~ 0078, Fig. 1, Fig. 7 ~ Figure 10 etc.)) manufacturing the light-emitting device of multiple encapsulation in batch.This manufacture method is described according to Figure 28 ~ Figure 32.In addition, Figure 28 ~ Figure 32 respectively with Japanese Unexamined Patent Publication 2011-138849 publication Fig. 1, Fig. 7 ~ Figure 10 is corresponding.Wherein, the Reference numeral in figure is changed, and the Reference numeral of a part is deleted.
First, as shown in Figure 32 A, Figure 32 B, the second resin material of filling white in the space formed by mold 931a and bed die 931b, be shaped the second shaping resin 906 and conductor portion 904 (once-forming) integratedly.Its result, 1 substrate 911 (with reference to Figure 29) equally spaced arranges the second shaping resin 906.Second shaping resin 906 is maintained at the conductor portion 904a ~ 904h upper (with reference to Figure 30 A, Figure 31 A) of substrate 911.In addition, substrate 911 is the flat substrate 1 sheet metal having been carried out to punch press process, by become light-emitting device 901 pin many groups conductor portion 904a ~ 904f and the carrier 915 that many group conductor portion 904a ~ 904f support is formed.In addition, conductor portion 904a ~ 904f flatly extends.
Then, as shown in Figure 32 C, Figure 32 D, the first resin material of filling black in the space formed by mold 941a and bed die 941b, be shaped the first shaping resin 905, second shaping resin 906 and conductor portion 904 (904a ~ 904h) integratedly.Its result, forms encapsulation 902.
Thereafter, the bottom surface 902c of the recess 902a of encapsulation 902 configures light-emitting component 903, with wire 907 electrical resistance the part of conductor portion 904a ~ 904f that the bottom surface 902c at recess 902a exposes is connected with the electrode terminal of light-emitting component 903.
Then, injecting sealing material in the recess 902a of encapsulation 902, makes it harden and form containment member (not shown).
Thereafter, from the substrate 911 being arranged encapsulation 902, encapsulation 902 is cut out.
Finally, make the conductor portion 904a ~ 904f flatly exposed from the side 902e of encapsulation 902, according to from the side 902e of encapsulation 902 along the mode warpage of the back side (bottom surface 902f), form the outside portion of terminal connected.
The light-emitting device 901 manufactured according to this manufacture method has such as been used as the parts of display unit (not scheming not).In the case, multiple light-emitting device 901 is configured on not shown substrate with square formation shape, and by soldering.In addition, around the light-emitting device 901 be configured on substrate, pour into a mould the resin of black, form the resin bed (not shown) of black, by this resin bed, the conductor portion 904a exposed by side 902e at light-emitting device 901 ~ 904f covers, and guarantees high contrast.
When the height dimension (length from the portion of terminal that the outside of 902d to conductor portion 904a ~ 904f above encapsulation 902 connects) of above-mentioned light-emitting device 901 is little, in the manufacture of display unit, when having poured into a mould the resin of black around light-emitting device 901, there is this resin and being attached to danger on the surface of the packing component of light-emitting device 901.
In order to avoid this problem, as long as make conductor portion 904a ~ 904f elongated, increase the height dimension of light-emitting device 901.But so, the configuration section of the encapsulation 902 on substrate 911, apart from becoming large, is maintained at the density step-down of the encapsulation 902 on substrate 911, the manufacture deterioration of efficiency of light-emitting device 901.
Summary of the invention
The present invention is exactly the invention made in view of such situation, and its problem is, makes it possible to increase the quantity of the semiconductor device encapsulation be maintained on carrier, improves the manufacture efficiency of semiconductor device.
In order to achieve the above object, under the 1st form of the present invention, provide the aggregate that a kind of semiconductor device encapsulates, the aggregate of this semiconductor device encapsulation possesses semiconductor device encapsulation and carrier; This semiconductor device is with being encapsulated as the encapsulation of multiple semiconductor device, be equipped with multiple contacts of the shape being flexed into regulation respectively, with the lucid and lively ester moulding of color, the first shell of keeping above-mentioned multiple contact, and by dead color ester moulding, the second housing in the regulation region that covers above-mentioned first shell; This carrier supports the encapsulation of the plurality of semiconductor device to high-density; Above-mentioned contact, has the first connecting portion be connected with semiconductor element, the second connecting portion be connected with substrate, and links the linking part of first, second connecting portion above-mentioned; Above-mentioned first connecting portion, is exposed in the receiving space of the above-mentioned semiconductor element of collecting of the upper surface portion being formed on above-mentioned first shell; Above-mentioned second connecting portion, is exposed to outside from the bottom of first, second shell above-mentioned; Above-mentioned linking part and at least above-mentioned first shell are by embedding mould molding (Japanese: イ ン サ ー ト モ ー Le De is shaped) and integrated.
The gauge of best above-mentioned contact is less than the gauge of above-mentioned carrier.
Best above-mentioned linking part extends towards the short transverse of above-mentioned first shell, and first, second connecting portion above-mentioned extends towards the direction orthogonal with the short transverse of above-mentioned first shell.
Best afore mentioned rules region is the outer peripheral face of above-mentioned first shell and the inside wall of above-mentioned first shell.
More preferably situation is, above-mentioned linking part is clamped by above-mentioned first shell and above-mentioned second housing.
In order to achieve the above object, under the 2nd form of the present invention, a kind of aggregate of semiconductor device is provided, in the aggregate of this semiconductor device, the above-mentioned semiconductor element be connected to above-mentioned first connecting portion, has been sealed in above-mentioned receiving space by the transparent resin be filled in above-mentioned receiving space.
Best above-mentioned semiconductor element is light-emitting diode.
In order to achieve the above object, under the 3rd form of the present invention, a kind of manufacture method of semiconductor device is provided, this semiconductor device is equipped with multiple contacts of the shape being flexed into regulation, with the lucid and lively ester moulding of color, the first shell of keeping above-mentioned multiple contact, and by dead color ester moulding, the second housing in the regulation region that covers above-mentioned first shell; Above-mentioned contact, has the first connecting portion be connected with semiconductor element, the second connecting portion be connected with substrate, and links the linking part of first, second connecting portion above-mentioned; Above-mentioned first connecting portion, is exposed in the receiving space of the above-mentioned semiconductor element of collecting of the upper surface portion being formed on above-mentioned first shell; Above-mentioned second connecting portion, is exposed to outside from the bottom of first, second shell above-mentioned; Above-mentioned linking part and at least above-mentioned first shell are by embedding mould molding and integrated; The manufacture method of this semiconductor device comprises once-forming operation, once-forming carrier pulls down operation, secondary forming operation, mounting semiconductor element operation and secondary forming carrier pull down operation; This once-forming operation, is undertaken embedding mould molding by the resin that above-mentioned color is lucid and lively and remains on above-mentioned first shell by the above-mentioned linking part of above-mentioned contact; This once-forming carrier pulls down operation, after above-mentioned once-forming operation, is pulled down by the once-forming carrier of the above-mentioned multiple contact of supporting; This secondary forming operation, after above-mentioned once-forming carrier pulls down operation, accommodate above-mentioned first shell being formed in the multiple shell accepting holes on secondary forming carrier, by the resin of above-mentioned dead color, above-mentioned first shell and the jut of above-mentioned secondary forming carrier given prominence to towards above-mentioned first shell in above-mentioned shell accepting hole are insert molded, cover the regulation region of above-mentioned first shell, and above-mentioned first shell and above-mentioned jut are linked; This mounting semiconductor element operation, after above-mentioned secondary forming operation, is housed in above-mentioned semiconductor element in the receiving space of above-mentioned first shell and is connected with above-mentioned first connecting portion, the resin that filling is transparent in this receiving space; This secondary forming carrier pulls down operation, after above-mentioned mounting semiconductor element operation, is pulled down by above-mentioned secondary forming carrier from above-mentioned second housing.
According to the present invention, make it possible to increase the quantity of the semiconductor device encapsulation be maintained on carrier, the manufacture efficiency of semiconductor device can be improved.
Above-mentioned and other object, feature and advantage of the present invention, should become clearer and more definite by the following detailed description based on accompanying drawing.
Accompanying drawing explanation
Fig. 1 is the vertical view of the aggregate of the semiconductor device encapsulation of one embodiment of the present invention.
The end view of the aggregate that Fig. 2 encapsulates for semiconductor device shown in Fig. 1.
The amplification stereogram in the A portion of the aggregate that Fig. 3 encapsulates for semiconductor device shown in Fig. 1.
Fig. 4 is the cutaway view of the IV-IV line along Fig. 1.
Fig. 5 is the cutaway view of the V-V line along Fig. 1.
Fig. 6 is the cutaway view of the VI-VI line along Fig. 1.
Fig. 7 is the stereogram of the contact be supported on once-forming carrier.
Fig. 8 for as the contact be supported on once-forming carrier, with the stereogram of contact of contact combinations shown in Fig. 7.
Fig. 9 is for representing the stereogram of contact state in opposite directions shown in contact and Fig. 8 shown in Fig. 7.
Figure 10 is by embedding the stereogram of mould molding by the shell integrated encapsulation intermediate constituted outside contact and first.
Figure 11 is the end view of encapsulation intermediate.
Figure 12 is the cutaway view of the XII-XII line along Figure 11.
The stereogram of encapsulation intermediate of Figure 13 for having cut from the carrier of once-forming shown in Figure 10.
Figure 14 is the front view of the intermediate of encapsulation shown in Figure 13.
Figure 15 is the vertical view of the intermediate of encapsulation shown in Figure 13.
Figure 16 is the upward view of the intermediate of encapsulation shown in Figure 13.
Figure 17 is the end view of the intermediate of encapsulation shown in Figure 13.
Figure 18 is the cutaway view of the encapsulation intermediate of XVIII-XVIII line along Figure 14.
Figure 19 is the stereogram representing the state before being housed in the shell accepting hole of secondary forming carrier by encapsulation intermediate.
Figure 20 represents stereogram encapsulation intermediate being housed in the state in the shell accepting hole of secondary forming carrier.
Figure 21 represents vertical view encapsulation intermediate being housed in the state in the shell accepting hole of secondary forming carrier.
Figure 22 master is the amplification stereogram in the B portion of Figure 21.
Figure 23 is the cutaway view of the XXIII-XXIII line along Figure 21.
Figure 24 is for representing that light-emitting diode has been mounted in semiconductor device shown in Fig. 3 to be encapsulated above, is filled with the stereogram of the state of transparent resin in the receiving space of semiconductor device encapsulation.
Figure 25 is for having pulled down the stereogram of light-emitting device from the carrier of secondary forming shown in Figure 24.
Figure 26 represents the stereogram multiple light-emitting device being arranged on the state on printed circuit board (PCB).
Figure 27 is filled with the stereogram of the state of the resin of black around light-emitting device multiple shown in Figure 26 for representing.
Figure 28 is the stereogram of the light-emitting device represented in the past.
Figure 29 is the vertical view of an example of the package assembling of the manufacture process of the light-emitting device represented in the past.
Figure 30 A, 30B are the stereogram of the shape of the encapsulation lower side of the manufacture process representing light-emitting device in the past, and Figure 30 A is the shape of once-forming when completing, and Figure 30 B is the shape of secondary forming when completing.
Figure 31 A, 31B are the stereogram of the shape of the encapsulation upper side of the manufacture process representing light-emitting device in the past, and Figure 31 A is the shape of once-forming when completing, and Figure 31 B is the shape of secondary forming when completing.
Figure 32 A ~ 32D is the cutaway view of the manufacturing process of the light-emitting device schematically represented in the past, and Figure 32 A is an example of once-forming mould, and Figure 32 B represents once-forming operation, and Figure 32 C represents an example of secondary forming mould, and Figure 32 D represents secondary forming operation.
Embodiment
Below, with reference to the accompanying drawings embodiments of the present invention are described.
As shown in Fig. 1 ~ Fig. 6, the aggregate 80 of the semiconductor device encapsulation of one embodiment of the present invention is made up of multiple semiconductor device encapsulation 70 and secondary forming carrier 60.
Semiconductor device encapsulation 70 is made up of multiple contact 10, first shell 20 and second housing 30.
As shown in Figure 6, each contact 10 has the first connecting portion 11, second connecting portion 12 and linking part 13.Contact 10 such as forms silver coating.The gauge (such as 0.15mm) of contact 10 is less than the gauge (such as 0.2mm) of secondary forming carrier 60 described later.Although comprise 6 kinds of contacts 10 (with reference to Fig. 7, Fig. 8) in multiple contact 10, their essential difference is only the shape of the first connecting portion 11, so, for various types of, contact 10 is not described.
First connecting portion 11 carries light-emitting diode (semiconductor element) 100 (with reference to Figure 25).Light-emitting diode 100 is connected with the first connecting portion 11 by bonding line (not shown) electrical resistance ground.Light-emitting diode 100 is red, green, the such 3 kinds of light-emitting diodes of blue LED.First connecting portion 11 is exposed in receiving space 21 described later.Second connecting portion 12 is connected to electrical resistance with printed circuit board (PCB) (substrate) 200 (with reference to Figure 26) by soldering.Second connecting portion 12 is exposed to outside from the bottom of first, second shell 20,30.Linking part 13 links the first connecting portion 11 and the second connecting portion 12.
Linking part 13 extends towards the short transverse H of the first shell 20, and first, second connecting portion 11,12 extends towards the direction C orthogonal with short transverse H.
Linking part 13 is clamped by the first shell 20 and second housing 30.
As shown in Fig. 3, Fig. 4, Fig. 5, Fig. 6, the first shell 20 is casing shape, defines space (with reference to Figure 18) in inside.In addition, in the upper surface portion of the first shell 20, define the receiving space 21 for accommodating light-emitting diode 100.First shell 20 is by the ester moulding of lucid and lively color such as white.Second housing 30 covers the outer peripheral face (regulation region) of the first shell 20 and the inside wall (region of regulation) of the first shell 20.The outer peripheral face of the first shell 20 comprises front 20a, back side 20b and the two sides 20c (with reference to Figure 15) of the first shell 20.The interior wall bread of the first shell 20 contains inner peripheral surface 20d, the ceiling face 20e (with reference to Figure 18) of the first shell 20.Second housing 30 is formed by the resin of dead color such as black.Contact 10 is integrated with the first shell 20 and second housing 30 by embedding mould molding.
Secondary forming carrier 60 has shell accepting hole 61 and jut 62.Shell accepting hole 61 accommodates the first shell 20 and second housing 30.Each a pair jut 62 pairs of second housing 30 in opposite directions support.
Secondary forming carrier 60 is formed by implementing punch press process to metallic plate.Secondary forming carrier 60 does not form coating.
Below, the manufacture method of light-emitting device (semiconductor device) 120 is described.
First, by implementing punch press process and bending machining to metallic plate (not shown), multiple contact 10 shown in Fig. 7, Fig. 8 is formed.Now, multiple contact 10 is connected integratedly with once-forming carrier 40.Once-forming carrier 40 is connected with the second connecting portion 12 of contact 10.
Then, as shown in Figure 9, the multiple contacts 10 be bearing on once-forming carrier 40 are configured in the bed die of mould (not shown) of once-forming, mold and this bed die are combined, the resin of the flow regime of filling white in the space formed by bed die and mold, makes it harden and form the first shell 20 (once-forming operation) shown in Figure 10, Figure 11, Figure 12.1 encapsulation intermediate 50 is formed by 6 contacts 10 and 1 the first shell 20.
Thereafter, the once-forming carrier 40 supported the contact 10 of encapsulation intermediate 50 is cut (once-forming carrier pulls down operation).Its result, obtains the encapsulation intermediate 50 of the state of monomer shown in Figure 13 ~ Figure 18.
Then, transfer to secondary forming operation, multiple encapsulation intermediate 50 is arranged in (with reference to Figure 19) in the bed die of the mould (not shown) of secondary forming.
Thereafter, as shown in figure 19, above the encapsulation intermediate 50 that the encapsulation intermediate 50 be arranged is arranged from this, secondary forming carrier 60 is covered, as shown in Figure 20, Figure 21, Figure 22, Figure 13, in multiple shell accepting holes 61 of secondary forming carrier 60, collecting encapsulates intermediate 50 respectively.
Then, the bed die of the mould of mold and secondary forming is combined, and the resin of the black of filling flow state in the space formed by bed die and mold, makes it harden and the second housing 30 shown in Fig. 4 that is shaped.Now cover the outer peripheral face of the first shell 20 and inner wall respectively by the resin of black.Such formation has been supported in the multiple semiconductor device encapsulation 70 (with reference to Fig. 3) on secondary forming carrier 60 to high-density, and secondary forming operation terminates.
By above operation, complete the aggregate 80 (with reference to Fig. 1 ~ Fig. 4) of the semiconductor device encapsulation be made up of secondary forming carrier 60 and multiple semiconductor device encapsulation 70.
Then, not shown chip mounter is used to be connected with the first connecting portion 11 exposed in receiving space 21 by light-emitting diode 100 (with reference to Figure 24, Figure 25), the transparent resin 110 of filling flow state in receiving space 21, make it harden, as shown in figure 24, sealed light emitting diode 100 (mounting semiconductor element operation) in receiving space 21.Its result, as shown in figure 24, completes the aggregate of the light-emitting device 120 be supported on secondary forming carrier 60.
Finally, light-emitting device 120 (secondary forming carrier pulls down operation) is pulled down from the jut 62 of secondary forming carrier 60.By above operation, obtain the light-emitting device 120 of the state of monomer shown in Figure 25.
Below, the manufacture method of the display unit 300 using light-emitting device 120 is described.
First, as shown in figure 26, configure multiple light-emitting device 120 with square formation shape on the printed circuit board 200, and carry out soldering installation.
Thereafter, as shown in figure 27, the resin of the flow regime of the dark-coloured such as black of surrounding's filling of light-emitting device 120 on the printed circuit board 200, makes it harden and form the resin bed 210 of black.Because the height dimension of light-emitting device 120 is large, so the resin not easily producing black is attached to the job error above light-emitting device 120 by mistake.By forming the resin bed 210 of black, obtain high contrast when showing image.
Display unit 300 is completed by above operation.
The action effect of this execution mode is as follows.
Because the multiple contacts 10 being flexed into regulation shape are as described above kept (with reference to Figure 12) by the first shell 20, the second housing 30 covering the first shell 20 be supported in can with on the secondary forming carrier 60 of arranged in high density semiconductor device encapsulation 70 (with reference to Figure 21, Figure 24), so, the semiconductor device encapsulation 70 that height dimension is large can be manufactured, and then manufacture the large light-emitting device 120 of height dimension, the job error (resin of black is attached to above light-emitting device 120 by mistake) when manufacturing display unit 300 can be reduced, and, light-emitting diode 100 can be carried relative to the semiconductor device encapsulation 70 be arranged at a high density.Therefore, be supported on carrier 915 with the state of conductor portion 904a ~ 904f with horizontal-extending, the technology (with reference to Figure 29, Figure 31 B) in the past that encapsulation 902 is supported on carrier 915 with low-density is compared, and can manufacture light-emitting device 120 with good efficiencies.
In addition, due in order to the encapsulation 70 of bearing semiconductor device, have employed special carrier (secondary forming carrier 60), so, the gauge of contact 10 can be made less than the gauge of secondary forming carrier 60.Therefore, it is possible to shape complicated of reply contact, and, the lift-launch operation to light-emitting diode 100 can be guaranteed, the intensity of secondary forming carrier 60 that secondary forming operation has an impact.
And, due to the linking part 13 of contact 10 (contact 10 of the state by warpage) and the first shell 20 by embedding mould molding integrated, so the linking part 13 of contact 10 is not easily peeled off from the first shell 20, and the positional precision of the second connecting portion 12 is guaranteed.Therefore, when manufacture display unit 300, when having installed light-emitting device 120 on the printed circuit board 200, because the installed surface of light-emitting device 120 relative to printed circuit board (PCB) 200 does not tilt substantially, so, not easily produce uneven on the picture of display unit 300.In this embodiment, the linking part 13 of contact 10 is clamped by the first shell 20 and second housing 30, so the linking part 13 of contact 10 can more not easily be peeled off from the first shell 20.
In addition, in the above-described embodiment, make the gauge of contact 10 less than the gauge of secondary forming carrier 60, but the gauge of the gauge of contact 10 and secondary forming carrier 60 also can be made equal, also can make larger than the gauge of secondary forming carrier 60.
In addition, in the above-described embodiment, second housing 30 covers the outer peripheral face of the first shell 20 and the inside wall of the first shell 20, but the regulation region of the first shell 20 covered by second housing 30 is not limited thereto.
In addition, in the above-described embodiment, although the linking part 13 of contact 10 is clamped by the first shell 20 and second housing 30, not necessarily linking part 13 have to be clamped by the first shell 20 and second housing 30.
In addition, in this embodiment, although the first shell 20 is by the ester moulding of white, second housing 30 is by the ester moulding of black, but the first shell 20 is not limited to white, as long as by the lucid and lively ester moulding of color, second housing 30 is not limited to black, as long as by the ester moulding of dead color.
In addition, semiconductor element is not limited to light-emitting diode 100.
Be more than the explanation of preferred form of the present invention, it is apparent to those skilled in the art that and without departing from the spirit or scope of the invention just can carry out various change.
Claims (37)
1. an aggregate for semiconductor device encapsulation, is characterized in that possessing: semiconductor device encapsulation and carrier;
This semiconductor device, with being encapsulated as the encapsulation of multiple semiconductor device, is equipped with respectively:
Multiple contacts of the shape of regulation are flexed into;
With the lucid and lively ester moulding of color, the first shell of keeping above-mentioned multiple contact; And
By dead color ester moulding, the second housing in the regulation region that covers above-mentioned first shell,
This carrier supports above-mentioned multiple semiconductor device encapsulation;
Above-mentioned contact, has the first connecting portion be connected with semiconductor element, the second connecting portion be connected with substrate, and links the linking part of first, second connecting portion above-mentioned;
Above-mentioned first connecting portion, the receiving space that court has been formed on the above-mentioned semiconductor element of collecting of the upper surface portion of above-mentioned first shell exposes;
Above-mentioned second connecting portion, exposes towards the outside from the bottom of first, second shell above-mentioned;
Above-mentioned linking part and at least above-mentioned first shell by embedding mould molding and integrated,
Above-mentioned carrier is different from once-forming carrier, and this once-forming carrier is used for supporting above-mentioned multiple contact when being shaped above-mentioned first shell, and this once-forming carrier was separated with above-mentioned multiple contact before the above-mentioned second housing of shaping.
2. the aggregate of semiconductor device encapsulation according to claim 1, is characterized in that: the gauge of above-mentioned contact is less than the gauge of above-mentioned carrier.
3. the aggregate of semiconductor device encapsulation according to claim 1, is characterized in that: above-mentioned linking part extends towards the short transverse of above-mentioned first shell, and first, second connecting portion above-mentioned extends towards the direction orthogonal with the short transverse of above-mentioned first shell.
4. the aggregate of semiconductor device encapsulation according to claim 2, is characterized in that: above-mentioned linking part extends towards the short transverse of above-mentioned first shell, and first, second connecting portion above-mentioned extends towards the direction orthogonal with the short transverse of above-mentioned first shell.
5. the aggregate of semiconductor device encapsulation according to claim 1, is characterized in that: afore mentioned rules region is the outer peripheral face of above-mentioned first shell and the inside wall of above-mentioned first shell.
6. the aggregate of semiconductor device encapsulation according to claim 2, is characterized in that: afore mentioned rules region is the outer peripheral face of above-mentioned first shell and the inside wall of above-mentioned first shell.
7. the aggregate of semiconductor device encapsulation according to claim 3, is characterized in that: afore mentioned rules region is the outer peripheral face of above-mentioned first shell and the inside wall of above-mentioned first shell.
8. the aggregate of semiconductor device encapsulation according to claim 4, is characterized in that: afore mentioned rules region is the outer peripheral face of above-mentioned first shell and the inside wall of above-mentioned first shell.
9. the aggregate of semiconductor device encapsulation according to claim 5, is characterized in that: above-mentioned linking part is clamped by above-mentioned first shell and above-mentioned second housing.
10. the aggregate of semiconductor device encapsulation according to claim 6, is characterized in that: above-mentioned linking part is clamped by above-mentioned first shell and above-mentioned second housing.
The aggregate of 11. semiconductor device encapsulation according to claim 7, is characterized in that: above-mentioned linking part is clamped by above-mentioned first shell and above-mentioned second housing.
The aggregate of 12. semiconductor device encapsulation according to claim 8, is characterized in that: above-mentioned linking part is clamped by above-mentioned first shell and above-mentioned second housing.
The aggregate of 13. 1 kinds of semiconductor devices, is characterized in that:
The above-mentioned semiconductor element that above-mentioned first connecting portion in the aggregate encapsulated with the above-mentioned semiconductor device of claim 1 is connected to, has been sealed in above-mentioned receiving space by the transparent resin be filled in above-mentioned receiving space.
The aggregate of 14. semiconductor devices according to claim 13, is characterized in that: the gauge of above-mentioned contact is less than the gauge of above-mentioned carrier.
The aggregate of 15. semiconductor devices according to claim 13, is characterized in that:
Above-mentioned linking part extends towards the short transverse of above-mentioned first shell, and first, second connecting portion above-mentioned extends towards the direction orthogonal with the short transverse of above-mentioned first shell.
The aggregate of 16. semiconductor devices according to claim 14, is characterized in that:
Above-mentioned linking part extends towards the short transverse of above-mentioned first shell, and first, second connecting portion above-mentioned extends towards the direction orthogonal with the short transverse of above-mentioned first shell.
The aggregate of 17. semiconductor devices according to claim 13, is characterized in that:
Afore mentioned rules region is the outer peripheral face of above-mentioned first shell and the inside wall of above-mentioned first shell.
The aggregate of 18. semiconductor devices according to claim 14, is characterized in that:
Afore mentioned rules region is the outer peripheral face of above-mentioned first shell and the inside wall of above-mentioned first shell.
The aggregate of 19. semiconductor devices according to claim 15, is characterized in that:
Afore mentioned rules region is the outer peripheral face of above-mentioned first shell and the inside wall of above-mentioned first shell.
The aggregate of 20. semiconductor devices according to claim 16, is characterized in that:
Afore mentioned rules region is the outer peripheral face of above-mentioned first shell and the inside wall of above-mentioned first shell.
The aggregate of 21. semiconductor devices according to claim 17, is characterized in that:
Above-mentioned linking part is clamped by above-mentioned first shell and above-mentioned second housing.
The aggregate of 22. semiconductor devices according to claim 18, is characterized in that:
Above-mentioned linking part is clamped by above-mentioned first shell and above-mentioned second housing.
The aggregate of 23. semiconductor devices according to claim 19, is characterized in that:
Above-mentioned linking part is clamped by above-mentioned first shell and above-mentioned second housing.
The aggregate of 24. semiconductor devices according to claim 20, is characterized in that:
Above-mentioned linking part is clamped by above-mentioned first shell and above-mentioned second housing.
The aggregate of 25. semiconductor devices according to claim 13, is characterized in that: above-mentioned semiconductor element is light-emitting diode.
The aggregate of 26. semiconductor devices according to claim 14, is characterized in that: above-mentioned semiconductor element is light-emitting diode.
The aggregate of 27. semiconductor devices according to claim 15, is characterized in that: above-mentioned semiconductor element is light-emitting diode.
The aggregate of 28. semiconductor devices according to claim 16, is characterized in that: above-mentioned semiconductor element is light-emitting diode.
The aggregate of 29. semiconductor devices according to claim 17, is characterized in that: above-mentioned semiconductor element is light-emitting diode.
The aggregate of 30. semiconductor devices according to claim 18, is characterized in that: above-mentioned semiconductor element is light-emitting diode.
The aggregate of 31. semiconductor devices according to claim 19, is characterized in that: above-mentioned semiconductor element is light-emitting diode.
The aggregate of 32. semiconductor devices according to claim 20, is characterized in that: above-mentioned semiconductor element is light-emitting diode.
The aggregate of 33. semiconductor devices according to claim 21, is characterized in that: above-mentioned semiconductor element is light-emitting diode.
The aggregate of 34. semiconductor devices according to claim 22, is characterized in that: above-mentioned semiconductor element is light-emitting diode.
The aggregate of 35. semiconductor devices according to claim 23, is characterized in that: above-mentioned semiconductor element is light-emitting diode.
The aggregate of 36. semiconductor devices according to claim 24, is characterized in that: above-mentioned semiconductor element is light-emitting diode.
The manufacture method of 37. 1 kinds of semiconductor devices, is characterized in that: this semiconductor device is equipped with multiple contacts of the shape being flexed into regulation; With the lucid and lively ester moulding of color, the first shell of keeping above-mentioned multiple contact; And by dead color ester moulding, the second housing in the regulation region that covers above-mentioned first shell,
Above-mentioned contact, has the first connecting portion be connected with semiconductor element, the second connecting portion be connected with substrate, and links the linking part of first, second connecting portion above-mentioned,
Above-mentioned first connecting portion, is exposed in the receiving space of the above-mentioned semiconductor element of collecting of the upper surface portion being formed on above-mentioned first shell,
Above-mentioned second connecting portion, exposes towards the outside from the bottom of first, second shell above-mentioned;
Above-mentioned linking part and at least above-mentioned first shell by embedding mould molding and integrated,
The manufacture method of above-mentioned semiconductor device comprises: once-forming operation, once-forming carrier are pulled down operation, secondary forming operation, mounting semiconductor element operation and secondary forming carrier and pulled down operation,
This once-forming operation, is undertaken embedding mould molding by the resin that above-mentioned color is lucid and lively and remains on above-mentioned first shell by the above-mentioned linking part of above-mentioned contact;
This once-forming carrier pulls down operation, after above-mentioned once-forming operation, is pulled down by the once-forming carrier of the above-mentioned multiple contact of supporting;
This secondary forming operation, after above-mentioned once-forming carrier pulls down operation, accommodate above-mentioned first shell being formed in the multiple shell accepting holes on secondary forming carrier, by the resin of above-mentioned dead color, embedding mould molding is carried out to above-mentioned first shell and the jut of above-mentioned secondary forming carrier given prominence to towards above-mentioned first shell in above-mentioned shell accepting hole, cover the regulation region of above-mentioned first shell, and above-mentioned first shell and above-mentioned jut are linked;
This mounting semiconductor element operation, after above-mentioned secondary forming operation, is housed in above-mentioned semiconductor element in the receiving space of above-mentioned first shell and is connected with above-mentioned first connecting portion, the resin that filling is transparent in this receiving space;
This secondary forming carrier pulls down operation, after above-mentioned mounting semiconductor element operation, is pulled down by above-mentioned secondary forming carrier from above-mentioned second housing.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-234085 | 2011-10-25 | ||
| JP2011234085A JP2013093418A (en) | 2011-10-25 | 2011-10-25 | Semiconductor device package assembly, semiconductor device assembly, and method for manufacturing semiconductor device |
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| Publication Number | Publication Date |
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| CN103078042A CN103078042A (en) | 2013-05-01 |
| CN103078042B true CN103078042B (en) | 2016-02-03 |
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| US (1) | US9553242B2 (en) |
| EP (1) | EP2587558B1 (en) |
| JP (1) | JP2013093418A (en) |
| KR (1) | KR101420015B1 (en) |
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| USD661262S1 (en) * | 2009-10-26 | 2012-06-05 | Nichia Corporation | Light emitting diode |
| JP6323217B2 (en) * | 2013-07-10 | 2018-05-16 | 日亜化学工業株式会社 | Light emitting device |
| JP5894310B2 (en) * | 2015-04-16 | 2016-03-23 | 京セラコネクタプロダクツ株式会社 | Manufacturing method of holder for semiconductor light emitting device |
| JP2017157593A (en) * | 2016-02-29 | 2017-09-07 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | Light-emitting diode, manufacturing method for light-emitting diode, light-emitting diode display device, and manufacturing method for light-emitting diode display device |
| DE102016105491A1 (en) * | 2016-03-23 | 2017-09-28 | Osram Opto Semiconductors Gmbh | MANUFACTURE OF SEMICONDUCTOR COMPONENTS |
| JP7360369B2 (en) * | 2020-08-28 | 2023-10-12 | Ｔｏｗａ株式会社 | Resin molding equipment and method for manufacturing resin molded products |
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| CN101656398A (en) * | 2008-08-20 | 2010-02-24 | 松下电器产业株式会社 | Semiconductor device and electronic equipment using same |
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| JP2001024012A (en) | 1999-07-06 | 2001-01-26 | Hitachi Cable Ltd | Mold type package and manufacturing method |
| JP3939554B2 (en) * | 2002-01-15 | 2007-07-04 | シャープ株式会社 | Semiconductor lead frame |
| JP4433050B2 (en) | 2005-05-26 | 2010-03-17 | 株式会社村田製作所 | Electronic component package manufacturing method and electronic component manufacturing method |
| JP4920288B2 (en) * | 2005-12-23 | 2012-04-18 | 帝国通信工業株式会社 | Mounting structure and mounting method of electronic components to circuit board |
| JP2008108836A (en) * | 2006-10-24 | 2008-05-08 | Sharp Corp | Semiconductor light emitting device and method for manufacturing the same |
| JP2008300553A (en) * | 2007-05-30 | 2008-12-11 | I-Chiun Precision Industry Co Ltd | Manufacturing method of frame combination member for surface mounted light emitting diode, and structure thereof |
| JP2010153666A (en) * | 2008-12-25 | 2010-07-08 | Showa Denko Kk | Light-emitting device, light emitting module, method of manufacturing light-emitting device |
| JP5689223B2 (en) * | 2009-03-05 | 2015-03-25 | 日亜化学工業株式会社 | Light emitting device |
| JP5293594B2 (en) | 2009-12-28 | 2013-09-18 | 株式会社村田製作所 | Electronic component device and lead frame |
| JP5347953B2 (en) * | 2009-12-28 | 2013-11-20 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
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| Publication number | Publication date |
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| CN103078042A (en) | 2013-05-01 |
| US9553242B2 (en) | 2017-01-24 |
| US20130100621A1 (en) | 2013-04-25 |
| EP2587558A3 (en) | 2014-07-02 |
| KR20130045176A (en) | 2013-05-03 |
| TWI517313B (en) | 2016-01-11 |
| JP2013093418A (en) | 2013-05-16 |
| KR101420015B1 (en) | 2014-07-15 |
| TW201324703A (en) | 2013-06-16 |
| EP2587558B1 (en) | 2016-11-02 |
| EP2587558A2 (en) | 2013-05-01 |
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