CN103078025B - A kind of LED and manufacture method thereof - Google Patents
A kind of LED and manufacture method thereof Download PDFInfo
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- CN103078025B CN103078025B CN201310030223.8A CN201310030223A CN103078025B CN 103078025 B CN103078025 B CN 103078025B CN 201310030223 A CN201310030223 A CN 201310030223A CN 103078025 B CN103078025 B CN 103078025B
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Abstract
Disclosed herein a kind of LED and manufacture method thereof, the manufacture method of LED, comprising: provide substrate; Grow the first gallium nitride layer over the substrate; At described first gallium nitride layer growth stress releasing layer; At described stress release layer growth protecting layer, described protective layer lattice structure is consistent with the first gallium nitride layer; The nitride gallium layer of growth regulation on described protective layer, meanwhile, described stress release layer is decomposed to form the destroyed stress release layer of lattice structure.The stress release layer that lattice structure is destroyed eliminates the interaction of described protective layer and the first gallium nitride layer; Described protective layer lattice structure is consistent with the first gallium nitride layer, for the second gallium nitride layer growth provides template.Thus the second gallium nitride layer can grow thicker thickness, and the method solving the existing material of growing gallium nitride on a silicon substrate cannot effectively eliminate in gallium nitride material the problem forming crackle, improves performance and the yield of device.
Description
Technical field
The present invention relates to LED manufacture technology field, particularly relate to a kind of LED and manufacture method thereof.
Background technology
Environmental protection is an important trend of modern illumination development, and the birth of LED technology and development are causing revolution of throwing light on for the second time.Compared with conventional light source, LED has the advantages such as the life-span is long, light efficiency is high, low in energy consumption, volume is little, freedom is integrated.The applications such as display out of doors, Landscape Lighting, TV backlight, room lighting replace conventional light source gradually becomes main flow.
At present, LED adopts epitaxially grown method to be produced on substrate, this is because occurring in nature does not have natural gallium nitride material.Conventional backing material has sapphire, carborundum (SiC), silicon (Si) etc.This wherein, Sapphire Substrate, due to suitable price, ripe process technology, is widely used in the light emitting diode, occupies shares a large amount of in market.But sapphire thermal conductivity is very low, only has 0.5W/cmK, the LED under high current density work, if the heat produced rapidly from device conducts out, can not will cause device light emitting efficiency to reduce and even lose efficacy.The lattice constant of carborundum and gallium nitride is close, and the lattice mismatch of this bi-material only has 3%, therefore more easily obtains the high GaN material of crystalline quality on sic substrates.But silicon carbide substrates cost of manufacture is high, processing is relatively immature, causes price far away higher than sapphire, several LED companies are only had to use.Silicon substrate price is the most cheap, and the growth of silicon substrate, processing technology are the most ripe, and the substrate dimension that can make is maximum, is therefore also the substrate that a kind of potentiality are larger.
The difficult point of epitaxial growth of gallium nitride material is that the thermal coefficient of expansion of GaN and silicon substrate has very big-difference on a silicon substrate, after more than 1 micron, the GaN layer of extension can produce a lot of crackle when high temperature during growth is reduced to room temperature, finally causes the GaN material defect of extension too much cannot use.And usually need the thickness of gallium nitride material will more than 3 microns when making blue green light LED.For this problem, there is Many researchers to propose different schemes: the aln layer inserting a low temperature in the middle of GaN growth, can effectively eliminate this crackle; But the gallium nitride thickness of this low temperature nitride aluminum layer is also limited, can only ensure that gallium nitride thickness is above at 1 micron.Thicker flawless gallium nitride can be provided by inserting multilayer low temperature AI N layer, but be the increase in complexity and the cost of technique.Another kind method makes the figure measure-alike with final LED on a silicon substrate in advance, each LED chip separated in advance, also can reduce the quantity of crackle, but too increase complexity and the cost of technique.
Summary of the invention
The invention provides a kind of LED and manufacture method thereof, to solve the problem cracked in gallium nitride material that silicon substrate grows.
For overcoming the above problems, the invention provides a kind of manufacture method of LED, comprising:
Substrate is provided;
Grow the first gallium nitride layer over the substrate;
At described first gallium nitride layer growth stress releasing layer;
At described stress release layer growth protecting layer, described protective layer lattice structure is consistent with the first gallium nitride layer;
The nitride gallium layer of growth regulation on described protective layer, meanwhile, described stress release layer is decomposed to form the destroyed stress release layer of lattice structure.
Optionally, before growth first gallium nitride layer, be also included in the step of described Grown aln layer.
Optionally, also comprise before Grown aluminum nitride buffer layer: by substrate at the temperature of 1000 DEG C ~ 1200 DEG C, toast in the hydrogen gas atmosphere.
Optionally, MOCVD technique is utilized to grow described aluminum nitride buffer layer, the first gallium nitride layer, stress release layer, protective layer and the second gallium nitride layer.
Optionally, the growth technique of described aluminum nitride buffer layer carries out at the temperature of 1000 DEG C ~ 1200 DEG C, and process gas is trimethyl aluminium and ammonia, and the thickness of the aluminum nitride buffer layer of growth is 10nm ~ 200nm.
Optionally, the growth technique of described first gallium nitride layer carries out at the temperature of 1000 DEG C ~ 1200 DEG C, and process gas is trimethyl gallium and ammonia, and the thickness of the first gallium nitride layer of growth is 200nm ~ 1000nm.
Optionally, the material of described stress release layer is InGaN.
Optionally, the growth of described InGaN is carried out at the temperature of 500 DEG C ~ 800 DEG C, process gas is trimethyl indium, trimethyl gallium and ammonia, and wherein the amount of substance of indium is more than or equal to 10% of indium and the total amount of substance of gallium, and the thickness of growing indium nitride gallium is 200nm ~ 1000nm.
Optionally, the material of described protective layer is aluminium gallium nitride alloy.
Optionally, the growth of described aluminium gallium nitride alloy is carried out at the temperature of 500 DEG C ~ 800 DEG C, and wherein the amount of substance of aluminium is more than or equal to 20% of the total amount of substance of aluminium plus gallium, and the thickness of growing aluminum nitride gallium is 100nm ~ 500nm.
Optionally, it is characterized in that, the growth technique of described second gallium nitride layer carries out at the temperature of 1000 DEG C ~ 1200 DEG C, and process gas is trimethyl aluminium and ammonia, and the thickness of the second gallium nitride layer of growth is 2000nm ~ 10000nm.
Another side of the present invention also provides a kind of LED; utilize the manufacture method of above-mentioned LED to be formed, comprising: substrate, be grown on the first gallium nitride layer on described substrate, lattice structure destroyed stress release layer, protective layer and the second gallium nitride layer successively.
Optionally, between described substrate and the first gallium nitride layer, also aluminum nitride buffer layer is comprised.
Optionally, the thickness of stress release layer that described lattice structure is destroyed is 10nm ~ 1000nm.
Optionally, the thickness of described protective layer is 100nm ~ 500nm.
Optionally, the material of described protective layer is aluminium gallium nitride alloy.
Optionally, in described aluminium gallium nitride alloy, the amount of substance of aluminium is more than or equal to 20% of the total amount of substance of aluminium plus gallium.
Optionally, the thickness 2000nm ~ 10000nm of the second gallium nitride layer.
The invention provides a kind of LED and manufacture method thereof, described LED comprises: substrate, be grown on the first gallium nitride layer, stress release layer, protective layer and the second gallium nitride layer on described substrate successively.Because described stress release layer decomposes at the temperature of the nitride gallium layer of growth regulation; its crystal structure is destroyed; thus the interaction of described protective layer and the first gallium nitride layer is eliminated; make the second gallium nitride layer grown on the protection layer can reach thicker thickness; the method solving the existing material of growing gallium nitride on a silicon substrate cannot effectively eliminate in gallium nitride material the problem forming crackle, improves performance and the yield of device.
Accompanying drawing explanation
Fig. 1 is the flow chart of the manufacture method of the LED of the embodiment of the present invention;
Fig. 2 A ~ 2F is the cross-sectional view of each step of the manufacture method of the LED of the embodiment of the present invention.
Embodiment
Mention in the introduction, because the method for the existing material of growing gallium nitride on a silicon substrate cannot effectively eliminate in gallium nitride material the problem forming crackle, constrain the thickness of gallium nitride material, and affect performance and the yield of device.
For this reason, the invention provides a kind of LED and manufacture method thereof, described LED comprises: substrate, be grown on the first gallium nitride layer on described substrate, stress release layer, protective layer and the second gallium nitride layer successively.Because described stress release layer decomposes at the temperature of the nitride gallium layer of growth regulation; its crystal structure is destroyed; thus eliminate the interaction of described protective layer and the first gallium nitride layer, make the second gallium nitride layer grown on protective layer can reach thicker thickness.
Below in conjunction with accompanying drawing, the present invention is described in more detail, which show the preferred embodiments of the present invention, the described those skilled in the art of understanding should can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 1, the flow chart of its LED manufacture method provided for the embodiment of the present invention, described method comprises the steps:
Step S31, provides substrate;
Step S32, grows the first gallium nitride layer over the substrate;
Step S33, at described first gallium nitride layer growth stress releasing layer;
Step S34, at described stress release layer growth protecting layer, described protective layer lattice structure is consistent with the first gallium nitride layer;
Step S35, the nitride gallium layer of growth regulation on described protective layer, meanwhile, described stress release layer is decomposed to form the destroyed stress release layer of lattice structure.
Preferably, before growth first gallium nitride layer, the also aluminum nitride buffer layer at Grown.In the present embodiment, the growth technique of described aluminum nitride buffer layer, the first gallium nitride layer, stress release layer, protective layer and the second gallium nitride layer is MOCVD(metal-organic chemical vapor deposition equipment) technique, all carry out in MOCVD board.
With reference to Fig. 2 A, perform step S31, substrate 101 is provided.Preferably, before carrying out subsequent epitaxial growth process, the step clean to described substrate 101 is also comprised.Its detailed process is as follows: described substrate 101 is put into metal-organic chemical vapor deposition equipment board, at the temperature of 1000 DEG C ~ 1200 DEG C, passes into hydrogen, to remove oxide layer and the pollutant on substrate 101 surface.
With reference to Fig. 2 B, growing aluminum nitride resilient coating 102 on described substrate 101.Concrete, at the temperature of 1000 DEG C ~ 1200 DEG C, carry out the growth of aluminum nitride buffer layer 102, process gas is preferably trimethyl aluminium and ammonia, and the thickness of the aluminum nitride buffer layer 102 of growth is 10nm ~ 200nm.
With reference to Fig. 2 C, perform step S32, described aluminum nitride buffer layer 102 grows the first gallium nitride layer 103.Concrete, at the temperature of 1000 DEG C ~ 1200 DEG C, carry out the growth of the first gallium nitride layer 103, process gas is preferably trimethyl gallium and ammonia, and the thickness of the first gallium nitride layer 103 of growth is 200nm ~ 1000nm.
With reference to Fig. 2 D, perform step S33, at described first gallium nitride layer 103 growth stress releasing layer 104.Preferably, the material of described Stress Release 104 is InGaN.Concrete, in the present embodiment, the growth of described InGaN is carried out at the temperature of 500 DEG C ~ 800 DEG C, process gas is trimethyl indium, trimethyl gallium and ammonia, wherein the amount of substance of indium is more than or equal to 10% of indium and the total amount of substance of gallium, the thickness of growing indium nitride gallium is 200nm ~ 1000nm, one of them preferably thickness be 500nm.Certainly, those skilled in the art can select process gas according to real needs, such as, select other alkyl derivatives of indium, aryl derivatives or hydroxy derivatives.
With reference to Fig. 2 E, perform step S34, at described stress release layer 104 growth protecting layer 105, described protective layer lattice structure is consistent with the first gallium nitride layer.Preferably, the material of described protective layer 105 is aluminium gallium nitride alloy.Concrete, the growth of described aluminium gallium nitride alloy is carried out at the temperature of 500 DEG C ~ 800 DEG C, and preferably in embodiment, the amount of substance of aluminium is more than or equal to 20% of the total amount of substance of aluminium plus gallium, and the thickness of growing aluminum nitride gallium is 100nm ~ 500nm.
With reference to Fig. 2 F, perform step S35, the nitride gallium layer 106 of growth regulation on described protective layer 105, meanwhile, described stress release layer 104 is decomposed to form the destroyed stress release layer 104 ' of lattice structure.The growth technique of described second gallium nitride layer 106 carries out at the temperature of 1000 DEG C ~ 1200 DEG C, and process gas is trimethyl aluminium and ammonia.Stress release layer 104 decomposes at such a temperature, forms the stress release layer 104 ' that lattice structure is destroyed, and protective layer 105 and the mutual effect of the first gallium nitride layer 103 are eliminated.And the lattice structure of protective layer 105 is consistent with the first gallium nitride layer 103, for the second gallium nitride layer 106 growth provides template.Therefore the second gallium nitride layer 106 can grow thicker thickness, such as, be 2000nm ~ 10000nm.
Another side of the present invention; a kind of LED manufactured by said method is also provided; please refer to Fig. 2 F; the structural representation of its LED provided for the embodiment of the present invention, described LED comprises: substrate 101, be grown on the first gallium nitride layer 103 on described substrate 101, lattice structure destroyed stress release layer 104 ', protective layer 105 and the second gallium nitride layer 106 successively.Preferably, also comprise between described substrate 101 and described first gallium nitride layer 103 aluminum nitride buffer layer 102,
Concrete, the thickness of described aluminum nitride buffer layer 102 is 10nm ~ 200nm, and described first gallium nitride layer 103 thickness is 200nm ~ 1000nm.The thickness of described stress release layer 104 is 10nm ~ 1000nm, material is preferably InGaN, wherein the amount of substance of indium is more than or equal to 10% of indium and the total amount of substance of gallium, and preferably, in described InGaN, the amount of substance of indium is more than or equal to 50% of indium and the total amount of substance of gallium.Like this when growth regulation nitride gallium layer 106, described stress release layer 104 decomposes, and the stress release layer 104 ' that formation lattice structure is destroyed eliminates the interaction between described protective layer 105 and the first gallium nitride layer 103.The thickness of described protective layer 105 is 100nm ~ 500nm, and material is preferably aluminium gallium nitride alloy, and preferably, in described aluminium gallium nitride alloy, the amount of substance of aluminium is more than or equal to 20% of the total amount of substance of aluminium plus gallium.Stress release layer 104 decompose crystal structure destroyed after, because protective layer 105 has the lattice structure consistent with the first gallium nitride layer 103, it can continue as the second gallium nitride layer 106 growth and provide template.Because the interaction between described protective layer 105 and the first gallium nitride layer 103 is eliminated by stress release layer 104, the second gallium nitride layer 106 that protective layer 105 is formed can obtain thicker thickness, such as 2000nm ~ 10000nm.Therefore the method overcoming the existing material of growing gallium nitride on a silicon substrate cannot effectively eliminate in gallium nitride material the problem forming crackle, improves performance and the yield of device.
Certainly, some known structure or steps are also comprised in the structure or step of the epitaxial wafer of the present embodiment, as, the step of epitaxial growth multiple quantum well active layer, the step etc. of extension ITO layer, the present invention does not relate to the improvement to these structures and step, these steps can add in the solution of the present invention according to the common practise of this area by those skilled in the art, do not repeat them here.
In sum, the invention provides a kind of LED and manufacture method thereof, described LED comprises: substrate, be grown on aluminum nitride buffer layer, the first gallium nitride layer, stress release layer, protective layer and the second gallium nitride layer on described substrate successively.Because described stress release layer decomposes at the temperature of the nitride gallium layer of growth regulation; its crystal structure is destroyed; thus eliminate the interaction of described protective layer and the first gallium nitride layer, make the second gallium nitride layer grown on the protection layer can reach thicker thickness.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (17)
1. a manufacture method for LED, comprising:
Substrate is provided;
Grow the first gallium nitride layer over the substrate;
At described first gallium nitride layer growth stress releasing layer;
At described stress release layer growth protecting layer, described protective layer lattice structure is consistent with the first gallium nitride layer;
The nitride gallium layer of growth regulation on described protective layer, meanwhile, described stress release layer is decomposed to form the destroyed stress release layer of lattice structure.
2. the manufacture method of LED as claimed in claim 1, is characterized in that, be also included in the step of described Grown aln layer before growth first gallium nitride layer.
3. the manufacture method of LED as claimed in claim 2, is characterized in that, also comprise before Grown aluminum nitride buffer layer: by substrate at the temperature of 1000 DEG C ~ 1200 DEG C, toast in the hydrogen gas atmosphere.
4. the manufacture method of LED as claimed in claim 2, is characterized in that, utilize MOCVD technique to grow described aluminum nitride buffer layer, the first gallium nitride layer, stress release layer, protective layer and the second gallium nitride layer.
5. the manufacture method of LED as claimed in claim 2, it is characterized in that, the growth technique of described aluminum nitride buffer layer carries out at the temperature of 1000 DEG C ~ 1200 DEG C, and process gas is trimethyl aluminium and ammonia, and the thickness of the aluminum nitride buffer layer of growth is 10nm ~ 200nm.
6. the manufacture method of LED as claimed in claim 4, it is characterized in that, the growth technique of described first gallium nitride layer carries out at the temperature of 1000 DEG C ~ 1200 DEG C, and process gas is trimethyl gallium and ammonia, and the thickness of the first gallium nitride layer of growth is 200nm ~ 1000nm.
7. the manufacture method of LED as claimed in claim 4, it is characterized in that, the material of described stress release layer is InGaN.
8. the manufacture method of LED as claimed in claim 7, it is characterized in that, the growth of described InGaN is carried out at the temperature of 500 DEG C ~ 800 DEG C, process gas is trimethyl indium, trimethyl gallium and ammonia, wherein the amount of substance of indium is more than or equal to 10% of indium and the total amount of substance of gallium, and the thickness of growing indium nitride gallium is 200nm ~ 1000nm.
9. the manufacture method of LED as claimed in claim 4, it is characterized in that, the material of described protective layer is aluminium gallium nitride alloy.
10. the manufacture method of LED as claimed in claim 9, it is characterized in that, the growth of described aluminium gallium nitride alloy is carried out at the temperature of 500 DEG C ~ 800 DEG C, and wherein the amount of substance of aluminium is more than or equal to 20% of the total amount of substance of aluminium plus gallium, and the thickness of growing aluminum nitride gallium is 100nm ~ 500nm.
11. 1 kinds of LED; utilize the manufacture method of LED as claimed in claim 1 to be formed, described LED comprises: substrate, be positioned at the first gallium nitride layer on described substrate, lattice structure destroyed stress release layer, protective layer and the second gallium nitride layer successively.
12. LED as claimed in claim 11, is characterized in that, between described substrate and the first gallium nitride layer, also comprise aluminum nitride buffer layer.
13. LED as claimed in claim 11, is characterized in that, the thickness of the stress release layer that described lattice structure is destroyed is 10nm ~ 1000nm.
14. LED as claimed in claim 11, is characterized in that, the thickness of described protective layer is 100nm ~ 500nm.
15. LED as claimed in claim 14, is characterized in that, the material of described protective layer is aluminium gallium nitride alloy.
16. LED as claimed in claim 15, it is characterized in that, in described aluminium gallium nitride alloy, the amount of substance of aluminium is more than or equal to 20% of the total amount of substance of aluminium plus gallium.
17. LED as claimed in claim 11, is characterized in that, the thickness of described second gallium nitride layer is 2000nm ~ 10000nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495867B1 (en) * | 2000-07-26 | 2002-12-17 | Axt, Inc. | InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire |
| CN101702418A (en) * | 2009-10-23 | 2010-05-05 | 山东华光光电子有限公司 | GaN-based LED chip extending and growing method for reducing dislocation defects |
| CN102569567A (en) * | 2012-03-21 | 2012-07-11 | 中国科学院半导体研究所 | Method for growing nitride light-emitting diode (LED) epitaxial structure |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495867B1 (en) * | 2000-07-26 | 2002-12-17 | Axt, Inc. | InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire |
| CN101702418A (en) * | 2009-10-23 | 2010-05-05 | 山东华光光电子有限公司 | GaN-based LED chip extending and growing method for reducing dislocation defects |
| CN102569567A (en) * | 2012-03-21 | 2012-07-11 | 中国科学院半导体研究所 | Method for growing nitride light-emitting diode (LED) epitaxial structure |
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