CN103077899A - Complex method for chip support plate and chip support plate prepared thereby - Google Patents

Complex method for chip support plate and chip support plate prepared thereby Download PDF

Info

Publication number
CN103077899A
CN103077899A CN201310022541XA CN201310022541A CN103077899A CN 103077899 A CN103077899 A CN 103077899A CN 201310022541X A CN201310022541X A CN 201310022541XA CN 201310022541 A CN201310022541 A CN 201310022541A CN 103077899 A CN103077899 A CN 103077899A
Authority
CN
China
Prior art keywords
metal substrate
support plate
chip support
conducting glue
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310022541XA
Other languages
Chinese (zh)
Inventor
廖萍涛
张守金
萧哲力
秋山隆德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HESHAN DONGLI ELECTRONIC TECHNOLOGY CO LTD
Original Assignee
HESHAN DONGLI ELECTRONIC TECHNOLOGY CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HESHAN DONGLI ELECTRONIC TECHNOLOGY CO LTD filed Critical HESHAN DONGLI ELECTRONIC TECHNOLOGY CO LTD
Priority to CN201310022541XA priority Critical patent/CN103077899A/en
Publication of CN103077899A publication Critical patent/CN103077899A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Die Bonding (AREA)

Abstract

The invention discloses a complex method for a chip support plate and a chip support plate prepared thereby. The traditional subtraction processing mode is abandoned; an incremental method process characterized in that compounding is carried out after punching is adopted, so that the structure precision of the chip support plate is higher, and the cost is simultaneously lowered; solid heat-conducting glue is applied to a photoelectric cooling support plate, the cooling effect of the photoelectric cooling support plate is better, and the new solid heat-conducting glue application field is created by aiming at chip packaging.

Description

A kind of complex method of chip support plate and the chip support plate that makes according to the method
Technical field
The present invention relates to a kind of complex method of chip support plate and the chip support plate that makes according to the method.
Background technology
Along with chip (Ban Daoti ﹠amp; LED) development trend of the increasing of power and the lightening miniaturization of chip, the thermal diffusivity of chip are more aobvious important, also higher to the required precision of its structure simultaneously.
Now in the encapsulation field of chip, the support plate of chip need to process the recessed cup of carries chips, traditional recessed cup is mostly processed in the mode of subtraction, be about to each layer of support plate compound good after, dig out a recessed cup with physical means thereon again, but this processing mode is so that the smooth not screw thread that is covered with of loading end of recessed cup bottom, recessed cup is difficult to square up with the position that loading end joins, so that chip contraposition difficulty when installing, having affected follow-up installation cooperates, also can cause higher fraction defective, increase cost.
Summary of the invention
In order to overcome the deficiencies in the prior art, the invention provides a kind of complex method of chip support plate, solid-state heat-conducting glue is applied to photoelectricity heat radiation support plate, adopt simultaneously and increase the recessed cup that method technique is processed chip support plate, so that support plate has good heat dispersion, structure precision is higher in the time of cost, and the present invention also provides a kind of chip support plate that makes according to the method simultaneously.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of complex method of chip support plate may further comprise the steps:
A., solid-state heat-conducting glue and metal substrate I and metal substrate II are provided, and the metal substrate II is used as loading plate;
B. metal substrate I and solid-state heat-conducting glue are carried out Combined Processing;
C. punching on the composite plate after metal substrate I and the solid-state heat-conducting glue Combined Processing, the recessed cup of a carries chips of formation;
D. the one side that the composite plate after the punching is had solid-state heat-conducting glue is carried out vacuum pressing-combining with the metal substrate II.
For metal substrate I and/or metal substrate II are cleaned, and in the certain roughness of its surface formation, make things convenient for each layer compound, can also before step a, carry out alligatoring, cleaning, passivation, oxidation and dry the processing to metal substrate I and/or metal substrate II.
In order to embody outward appearance, can also after steps d, carry out painted processing to metal substrate I, metal substrate II and solid-state heat-conducting glue.
When carrying out the vacuum pressing-combining of steps d, temperature is 160~190 ℃, and vacuum degree is 400~760mm Hg, and pressing time is 50~80 minutes.
Described metal substrate I, metal substrate II are aluminium base, copper base, iron substrate or copper alloy substrate.
Further, described solid-state heat-conducting glue comprises resin and filler, the mass percent of its constituent, and modification high temperature phenolic resins, epoxy resin, acrylic resin and polyimide resin account for 20~30%, aluminium oxide AL 2O 3Account for 50~60%, boron nitride BN accounts for 5~10%.
Further, described metal substrate I and metal substrate II are measure-alike.
Complex method according to the said chip support plate is processed the chip support plate that obtains, comprise the metal substrate II as loading plate, and the compound composite plate that is installed on the metal substrate II, described composite plate comprises the solid-state heat-conducting glue that fits in loading plate and the metal substrate I that is arranged on the solid-state heat-conducting glue, is provided with on the described composite plate be used to the recessed cup of laying chip.
The invention has the beneficial effects as follows: abandon the subtraction mode of the compound again punching of elder generation in the past, adopt the again compound method that increases technique of first punching, so that the structure precision of chip support plate is higher, reduced simultaneously cost; Solid-state heat-conducting glue is applied to make its heat dispersion better on the photoelectricity heat radiation support plate, has started the frontier that solid-state heat-conducting glue is used for chip package.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the mounting structure schematic diagram of chip support plate of the present invention and chip;
Fig. 2 is the structural representation of chip support plate of the present invention.
Embodiment
See figures.1.and.2, the complex method of a kind of chip support plate of the present invention may further comprise the steps:
A., solid-state heat-conducting glue 3 and metal substrate I 1 and metal substrate II 2 are provided, and described metal substrate I 1 and metal substrate II 2 are measure-alike, and metal substrate II 2 is used as loading plate;
B. metal substrate I 1 and solid-state heat-conducting glue 3 are carried out Combined Processing, recombination process only need to heat the one side that solid-state heat-conducting glue 3 and metal substrate I 1 are fitted again to press close to a little, just can rely on the adhesive force of solid-state heat-conducting glue 3 crosslinking curings to make both compound;
C. punching on the composite plate after metal substrate I 1 and solid-state heat-conducting glue 3 Combined Processing, the recessed cup 4 of a carries chips 5 of formation;
D. the one side that the composite plate after the punching is had solid-state heat-conducting glue 3 is carried out vacuum pressing-combining with metal substrate II 2, and in this embodiment, temperature is controlled at 160~190 ℃, and vacuum degree is 400~760mm Hg, and pressing time is 50~80 minutes.
For metal substrate I 1 and/or metal substrate II 2 are cleaned, and form certain roughness on its surface, make things convenient for each layer compound, before step a, metal substrate I 1 and metal substrate II 2 are carried out alligatoring, cleaning, passivation, oxidation and dry the processing.
In order to embody outward appearance, can also after steps d, carry out painted processing to metal substrate I 1, metal substrate II 2 and solid-state heat-conducting glue 3.Painted can be the colors such as black, gold, silver gray, green.
Described metal substrate I 1, metal substrate II 2 are aluminium base, copper base, iron substrate or copper alloy substrate.
Described solid-state heat-conducting glue 3 uses immobilising solid-state heat conduction PP, guarantee that its compound recurve cup 4 of finishing can not have excessive glue all around, described solid-state heat-conducting glue 3 comprises resin and filler, the mass percent of its constituent, modification high temperature phenolic resins, epoxy resin, acrylic resin and polyimide resin account for 20~30%, aluminium oxide AL 2O 3Account for 50~60%, boron nitride BN accounts for 5~10%, also comprises in addition a certain amount of plasticizer and curing agent.In the mixed process of solid-state heat-conducting glue 3 production and processings, fully stir, making filler form tiny powder is suspended in the resin, form metastable liquid, stirring frequency is higher, and mixed effect is better, and solid-state heat-conducting glue 3 performances that obtain are better, the present invention adopts ultrasonic transducer generation high frequency sound wave to mix, so that its good heat conductivity, the ceiling temperature of thermal stress can reach 288 ℃, and thickness is 0.1~0.4mm only.
Complex method according to the said chip support plate is processed the chip support plate that obtains, comprise the metal substrate II 2 as loading plate, and the compound composite plate that is installed on the metal substrate II 2, described composite plate comprises the solid-state heat-conducting glue 3 that fits in loading plate and the metal substrate I 1 that is arranged on the solid-state heat-conducting glue 3, is provided with on the described composite plate be used to the recessed cup 4 of laying chip 5.
In this chip support plate during packaged chip 5, chip 5 is placed in the recessed cup 4, and chip 5 contacts with metal substrate II 2, and places among metal substrate I 1 and the solid-state heat-conducting glue 3, be conducive to heat radiation, chip support plate top is equipped with a Flexible Printed Circuit 6 that is connected with chip 5.
Certainly, the present invention can also have other structural distortion except above-mentioned execution mode, and these equivalent technical solutions also should be within its protection range.

Claims (10)

1. the complex method of a chip support plate is characterized in that, may further comprise the steps:
Solid-state heat-conducting glue and metal substrate I and metal substrate II are provided, and the metal substrate II is used as loading plate;
Metal substrate I and solid-state heat-conducting glue are carried out Combined Processing;
Punching on the composite plate after metal substrate I and the solid-state heat-conducting glue Combined Processing, the recessed cup of a carries chips of formation;
The one side that composite plate after the punching is had solid-state heat-conducting glue is carried out vacuum pressing-combining with the metal substrate II.
2. the complex method of a kind of chip support plate according to claim 1 is characterized in that: before step a the metal substrate I is carried out alligatoring, cleaning, passivation, oxidation and dry the processing.
3. the complex method of a kind of chip support plate according to claim 1 is characterized in that: before step a the metal substrate II is carried out alligatoring, cleaning, passivation, oxidation and dry the processing.
4. the complex method of a kind of chip support plate according to claim 1 is characterized in that: after steps d metal substrate I, metal substrate II and solid-state heat-conducting glue are carried out painted processing.
5. the complex method of a kind of chip support plate according to claim 1, it is characterized in that: when carrying out the vacuum pressing-combining of steps d, temperature is 160~190 ℃, and vacuum degree is 400~760mm Hg, and pressing time is 50~80 minutes.
6. the complex method of a kind of chip support plate according to claim 1, it is characterized in that: described metal substrate I, metal substrate II are aluminium base, copper base, iron substrate or copper alloy substrate.
7. the complex method of a kind of chip support plate according to claim 1, it is characterized in that: described solid-state heat-conducting glue comprises resin and filler, the mass percent of its constituent, modification high temperature phenolic resins, epoxy resin, acrylic resin and polyimide resin account for 20~30%, aluminium oxide AL 2O 3Account for 50~60%, boron nitride BN accounts for 5~10%.
8. the complex method of a kind of chip support plate according to claim 7 is characterized in that: also comprise plasticizer and curing agent in the described solid-state heat-conducting glue.
9. the complex method of a kind of chip support plate according to claim 1, it is characterized in that: described metal substrate I and metal substrate II are measure-alike.
One kind according to claim 1-9 in the chip support plate that makes of each complex method, it is characterized in that: comprise the metal substrate II as loading plate, and the compound composite plate that is installed on the metal substrate II, described composite plate comprises the solid-state heat-conducting glue that fits in loading plate and the metal substrate I that is arranged on the solid-state heat-conducting glue, is provided with on the described composite plate be used to the recessed cup of laying chip.
CN201310022541XA 2013-01-21 2013-01-21 Complex method for chip support plate and chip support plate prepared thereby Pending CN103077899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310022541XA CN103077899A (en) 2013-01-21 2013-01-21 Complex method for chip support plate and chip support plate prepared thereby

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310022541XA CN103077899A (en) 2013-01-21 2013-01-21 Complex method for chip support plate and chip support plate prepared thereby

Publications (1)

Publication Number Publication Date
CN103077899A true CN103077899A (en) 2013-05-01

Family

ID=48154393

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310022541XA Pending CN103077899A (en) 2013-01-21 2013-01-21 Complex method for chip support plate and chip support plate prepared thereby

Country Status (1)

Country Link
CN (1) CN103077899A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114430627A (en) * 2022-04-02 2022-05-03 东莞市春瑞电子科技有限公司 Manufacturing method of composite sensor packaging support plate and laser radar sensor

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1240566A (en) * 1996-10-21 2000-01-05 艾利森电话股份有限公司 Means and method for mounting electronic device
CN201478296U (en) * 2009-05-05 2010-05-19 新利虹科技股份有限公司 High-power radiating substrate
CN101974208A (en) * 2010-08-20 2011-02-16 广东生益科技股份有限公司 High thermal conductivity resin composition and high thermal conductivity coated metal foil board manufactured by using same
CN202084524U (en) * 2010-10-19 2011-12-21 联京光电股份有限公司 Packaging plate
WO2012063935A1 (en) * 2010-11-13 2012-05-18 日東電工株式会社 Bubble-containing thermally-conductive resin-composition layer, manufacturing method therefor, and pressure-sensitive adhesive sheet using said resin-composition layer
CN102675857A (en) * 2012-06-11 2012-09-19 佛山市南海区研益机电有限公司 Heat-conducting and insulating thermosetting composition as well as preparation method and application thereof
CN102883524A (en) * 2011-07-15 2013-01-16 昆山雅森电子材料科技有限公司 Interconnection conducting and heat-conducting method of double-faced circuit board and double-faced circuit board based on method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1240566A (en) * 1996-10-21 2000-01-05 艾利森电话股份有限公司 Means and method for mounting electronic device
CN201478296U (en) * 2009-05-05 2010-05-19 新利虹科技股份有限公司 High-power radiating substrate
CN101974208A (en) * 2010-08-20 2011-02-16 广东生益科技股份有限公司 High thermal conductivity resin composition and high thermal conductivity coated metal foil board manufactured by using same
CN202084524U (en) * 2010-10-19 2011-12-21 联京光电股份有限公司 Packaging plate
WO2012063935A1 (en) * 2010-11-13 2012-05-18 日東電工株式会社 Bubble-containing thermally-conductive resin-composition layer, manufacturing method therefor, and pressure-sensitive adhesive sheet using said resin-composition layer
CN102883524A (en) * 2011-07-15 2013-01-16 昆山雅森电子材料科技有限公司 Interconnection conducting and heat-conducting method of double-faced circuit board and double-faced circuit board based on method
CN102675857A (en) * 2012-06-11 2012-09-19 佛山市南海区研益机电有限公司 Heat-conducting and insulating thermosetting composition as well as preparation method and application thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114430627A (en) * 2022-04-02 2022-05-03 东莞市春瑞电子科技有限公司 Manufacturing method of composite sensor packaging support plate and laser radar sensor

Similar Documents

Publication Publication Date Title
JP3173569U (en) Thin metal substrate with high thermal conductivity
CN102161871A (en) Heat-conductive insulated adhesive tape for large-power light-emitting diode (LED) and preparation method thereof
CN106449952B (en) A kind of preparation method of LED encapsulation material
CN104465541A (en) Chip packaging structure and manufacturing method thereof
CN101784160A (en) Method for manufacturing press in type printed circuit board with high thermal conductivity
CN109791918A (en) The radiator structure of circuit device
US9105611B2 (en) Power module package
CN1532920A (en) High heat radiation platic package and its producing method
CN103077899A (en) Complex method for chip support plate and chip support plate prepared thereby
CN206558540U (en) A kind of flexible COB light source of the good upside-down mounting of thermal diffusivity
CN209882211U (en) HDI high density lamination circuit board
KR20150078911A (en) Semiconductor package module and Method for Manufacturing The same
CN203165879U (en) Chip supporting board
CN205692856U (en) Upside-down mounting lens type metal basal board LED encapsulation structure
CN102881813A (en) Radiator panel manufacture method
JP2010258458A (en) Metal-ceramic composite heat-dissipating plate integrated with ceramic insulating substrate and method of manufacturing the same
CN106838642A (en) A kind of LED paster light sources
CN207938645U (en) Ceramic white light sticking type LED light source
CN102802362A (en) Production process of composite circuit board and novel composite circuit board
CN206947374U (en) A kind of LED light source component with graphene adhesive layer
CN202816904U (en) Encapsulation structure of naked-die device
CN203398156U (en) LED substrate based on hard alumina materials
CN109390242A (en) A kind of New Type Power Devices encapsulating structure and preparation method thereof
CN221102063U (en) Semiconductor packaging sealing structure
JP2008258435A (en) Semiconductor device, and manufacturing method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20130501