CN103077889A - 一种晶圆背面减薄方法 - Google Patents
一种晶圆背面减薄方法 Download PDFInfo
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109321253A (zh) * | 2018-11-28 | 2019-02-12 | 湖北兴福电子材料有限公司 | 一种硅晶圆的蚀刻液 |
CN110767593A (zh) * | 2019-10-14 | 2020-02-07 | 芯盟科技有限公司 | 一种半导体结构及其形成方法 |
CN112530798A (zh) * | 2020-12-04 | 2021-03-19 | 广东省科学院半导体研究所 | 一种半导体结构及其制作、减薄方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20070249139A1 (en) * | 2006-04-21 | 2007-10-25 | Kishor Purushottam Gadkaree | Semiconductor on glass insulator made using improved thinning process |
CN102832224A (zh) * | 2012-09-10 | 2012-12-19 | 豪威科技(上海)有限公司 | 晶圆减薄方法 |
CN102832223A (zh) * | 2012-09-06 | 2012-12-19 | 豪威科技(上海)有限公司 | 晶圆减薄方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20070249139A1 (en) * | 2006-04-21 | 2007-10-25 | Kishor Purushottam Gadkaree | Semiconductor on glass insulator made using improved thinning process |
CN102832223A (zh) * | 2012-09-06 | 2012-12-19 | 豪威科技(上海)有限公司 | 晶圆减薄方法 |
CN102832224A (zh) * | 2012-09-10 | 2012-12-19 | 豪威科技(上海)有限公司 | 晶圆减薄方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109321253A (zh) * | 2018-11-28 | 2019-02-12 | 湖北兴福电子材料有限公司 | 一种硅晶圆的蚀刻液 |
CN110767593A (zh) * | 2019-10-14 | 2020-02-07 | 芯盟科技有限公司 | 一种半导体结构及其形成方法 |
CN112530798A (zh) * | 2020-12-04 | 2021-03-19 | 广东省科学院半导体研究所 | 一种半导体结构及其制作、减薄方法 |
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CN103077889B (zh) | 2016-04-13 |
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Owner name: WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD. Free format text: FORMER OWNER: LU WEI Effective date: 20130716 |
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