CN103076838B - Current mirror and complementary bias method thereof - Google Patents
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- CN103076838B CN103076838B CN201210587420.5A CN201210587420A CN103076838B CN 103076838 B CN103076838 B CN 103076838B CN 201210587420 A CN201210587420 A CN 201210587420A CN 103076838 B CN103076838 B CN 103076838B
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Abstract
The invention discloses a complementary bias method of a current mirror. The complementary bias method is used for biasing transistors in a current mirror circuit, wherein the total number of the transistors is even, emitter electrodes of the transistors are connected with a ground level, base electrodes of the transistors serve as current input terminals, and collector electrodes of the transistors serve as current output terminals. The complementary bias method comprises the following steps of: inputting a direct-current component to the current input terminal of each transistor in the current mirror circuit; selecting a first number of transistors from the current mirror circuit, wherein the first number is even; dividing the transistors of the first number into two parts according to a bisection manner; and inputting first alternating-current components to the base electrodes of the transistors of a first part of the transistors of the first number, and inputting second alternating-current components to the base electrodes of the transistors of a second part of the transistors of the first number, wherein the first alternating-current components and the second alternating-current components are equal in size and opposite in direction. Through the complementary bias method, the current output terminals can be enabled to obtain current higher than that in the prior art.
Description
Technical field
The application relates to current mirroring circuit field, particularly the complementary biasing means of a kind of current mirror and a kind of current mirror.
Background technology
Current mirror is an important circuit unit of mimic channel, can be for replica current, and it both can be used as bias unit and also can be used as Signal Processing Element, was widely used in various simulations and radio circuit design.
A Main Function of current mirror is to combine with reference source, biasing is provided to the Core Feature part of mimic channel, such as the differential amplifier that does load to resistance provides tail current source, the reference source of function admirable combines with current mirror, can make the quiescent point of mimic channel Core Feature part in the time that temperature, supply voltage and technique change, still keep stable.
Existing current mirror is composed in parallel by even number transistor, its biasing means is the DC component of transistorized base stage input in current mirror, the voltage of DC component is a fixed value, under normal circumstances, in order to meet the consideration of transistor in forward amplification region, transistorized base voltage is less than collector voltage, this just requires the voltage of DC component less, also just cause transistorized collector total current less, the in the situation that of the larger electric current of needs current mirror output, existing current mirror biasing means can not meet the demands.
Summary of the invention
In view of this, the embodiment of the present application provides the complementary biasing means of a kind of current mirror and a kind of current mirror, can make the larger electric current of transistorized collector output in current mirror.
To achieve these goals, the technical scheme that the application provides is as follows:
The complementary biasing means of a kind of current mirror, for the transistor of current mirroring circuit is setovered, described transistorized total quantity is even number, described in even number, transistorized emitter is connected with ground level, described in even number, transistorized base stage is as current input terminal, described in even number, transistorized collector is as current output terminal, and described complementary biasing means comprises:
A DC component of the current input terminal of all crystals pipe input in current mirroring circuit;
Select the first quantity transistor in described current mirroring circuit, described the first quantity is even number;
By the first quantity transistor according to point mode be divided into two parts;
In transistor described in the first quantity, in the transistorized base stage of Part I, input the first AC compounent;
In transistor described in the first quantity, in the transistorized base stage of Part II, input the second AC compounent, described the first AC compounent and the second AC compounent equal and opposite in direction, opposite direction.
Preferably, described the first quantity is less than total quantity.
Preferably, described the first quantity equals total quantity.
Preferably, described transistorized parameter is identical.
Preferably, described transistor is NPN transistor.
Preferably, described transistor is PNP transistor.
The embodiment of the present application also provides a kind of current mirror, and described current mirror comprises: transistor circuit, sorting circuit and biasing circuit, wherein:
Described transistor circuit comprises even number transistor, and described transistorized base stage is as the input end of described current mirroring circuit, and described transistorized collector is as the output terminal of described transistor circuit, and described transistorized emitter is connected with ground level;
Described sorting circuit is used for selecting described transistor circuit the first quantity transistor, and by the first quantity transistor according to point mode be divided into two parts, wherein, described the first quantity is even number;
Described biasing circuit is connected with described sorting circuit, for generating DC component and DC component being outputed to the first quantity transistorized base stage; And generate the first AC compounent and the second AC compounent, and described the first AC compounent is outputed in the transistorized base stage of Part I, the second AC compounent is outputed in the transistorized base stage of Part II to the first AC compounent and the second AC compounent equal and opposite in direction, opposite direction.
Preferably, described the second quantity is less than total quantity.
Preferably, described the second quantity equals total quantity.
Preferably, described transistorized parameter is identical.
As can be seen from the above technical solutions, compared with prior art, the complementary biasing means of current mirror that the application provides by increasing equal and opposite in direction in current mirroring circuit, the alternating current component of opposite direction, make transistorized input port component in current mirror identical with existing biasing means in the situation that, collector output total current is larger than the output current of existing biasing means, complementary biasing means is comparatively simple, and easily realize, the current mirror that the application provides can be inputted different AC compounent by sorting circuit and biasing circuit in current mirror module, thereby can obtain larger output current.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, the accompanying drawing the following describes is only some embodiment that record in the application, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The schematic flow sheet of the complementary biasing means of a kind of current mirror that Fig. 1 provides for the embodiment of the present application;
Transistorized connection diagram in a kind of current mirror that Fig. 2 provides for the embodiment of the present application;
Transistorized connection diagram in the another kind of current mirror that Fig. 3 provides for the embodiment of the present application;
The electrical block diagram of a kind of current mirror that Fig. 4 provides for the embodiment of the present application.
Embodiment
In order to make those skilled in the art person understand better the technical scheme in the application, below in conjunction with the accompanying drawing in the embodiment of the present application, technical scheme in the embodiment of the present application is clearly and completely described, obviously, described embodiment is only some embodiments of the present application, instead of whole embodiment.Based on the embodiment in the application, those of ordinary skill in the art are not making the every other embodiment obtaining under creative work prerequisite, all should belong to the scope of the application's protection.
Embodiment mono-:
The schematic flow sheet of the complementary biasing means of a kind of current mirror that Fig. 1 provides for the embodiment of the present application.
The method is applied in current mirroring circuit, and in this circuit, transistorized total quantity is even number, and the emitter of all crystals pipe is connected with ground level, and the base stage of all crystals pipe is as current input terminal, and the collector of all crystals pipe is as current output terminal.
As shown in Figure 1, this complementation biasing means comprises:
S100, in current mirroring circuit the DC component of current input terminal input of all crystals pipe.
The current input terminal of all crystals pipe in current mirroring circuit can connect a DC constant current power supply, and this DC constant current power supply can generate a DC component, in the base stage of all crystals pipe, all inputs an identical DC component.
The first quantity transistor in S200, selection current mirroring circuit.
For the current average of the current input terminal that makes all crystals pipe is unlikely to change compared with the conventional method, this first quantity is even number, and this first quantity can be less than total quantity, also can equal total quantity.
S300, by the first quantity transistor according to point mode be divided into two parts.
S400, in the first quantity transistor, in the transistorized base stage of Part I, input the first AC compounent.
S500, in the first quantity transistor, in the transistorized base stage of Part II, input the second AC compounent.
Above-mentioned the first AC compounent and the second AC compounent are equal and opposite in directions, the AC compounent of opposite direction, in actual applications, can produce a benchmark AC compounent by an ac current source, in the transistorized base stage of Part I, input this benchmark AC compounent, after the direction that this benchmark AC compounent can change this benchmark AC compounent through a phase inverter, it is the second AC compounent, this second AC compounent is input in the transistorized base stage of Part II, in addition, the transistorized base stage of two parts can also be connected with two ac current sources respectively, these two ac current sources can generate two equal and opposite in directions, and the AC compounent of opposite direction, in actual applications, the first AC compounent and the second AC compounent can be produced by the inside of current mirror place side circuit, for example provided by the output of oscillator, so just can in side circuit, not produce a signal source, output on integrated circuit does not affect.
As can be seen from the above technical solutions, the complementary biasing means of current mirror that the embodiment of the present application provides by increasing the AC compounent of equal and opposite in direction, opposite direction in current mirroring circuit, make transistorized input port component in current mirror identical with existing biasing means in the situation that, collector output total current is larger than the output current of existing biasing means, this complementation biasing means is comparatively simple, and easily realize, by input different AC compounent in transistor, thereby can obtain larger output current.
The method the embodiment of the present application being provided below in conjunction with concrete case is described in detail:
Transistorized connection diagram in a kind of current mirror that Fig. 2 provides for the embodiment of the present application, wherein, the integrated connection situation of current mirror is with existing consistent, transistorized quantity is m, m is made as even number, the transistorized emitter of even number is connected with ground level, the transistorized base stage of even number is as current input terminal, the transistorized collector of even number is as current output terminal, and in a DC component of current input terminal input, transistor can be NPN transistor, also can be PNP transistor, for sake of convenience, in the embodiment of the present application, transistor is NPN transistor.
As shown in Figure 2, m is the quantity of transistor parallel connection, and establishing m is here even number, in existing biasing means, all only inputs a DC component V m transistorized base stage
0, i.e. V
b=V
0, can obtain thus m transistorized collector total current i
c, 1for:
In formula, I
sfor collector reverse saturation current, V
tfor thermal voltage.
Fig. 3 is transistorized connection diagram in the another kind of current mirror that provides of the embodiment of the present application.
As shown in Figure 3, the integrated connection situation of current mirror is with existing consistent, and transistorized quantity is m, m is made as even number, the transistorized emitter of even number is connected with ground level, and the transistorized base stage of even number is as current input terminal, and the transistorized collector of even number is as current output terminal, in a DC component of current input terminal input, transistor can be NPN transistor, can be also PNP transistor, for sake of convenience, in the embodiment of the present application, transistor is NPN transistor.
Carry out in the process of complementary biasing at the transistor in current mirroring circuit, first select the first quantity transistor, if transistorized total quantity is two, choose two transistors and carry out complementation biasing, if transistorized quantity is to be greater than the even number of two, can select all transistors to carry out complementation biasing, also can therefrom choose 2,4,6 or more even number transistor.
In the first quantity transistor, get afterwards the transistor of half quantity, also input the first AC compounent Acos (ω t+ φ) in its base stage, new electric current is V
bP, i.e. V
bP=V
0+ Acos (ω t+ φ) inputs the second AC compounent in the transistorized base stage of the other half quantity of the first quantity transistor
new input current is V
bN, i.e. V
bN=V
0-Acos (ω t+ φ), the port V connecting in transistorized base stage
bPand V
bNupper except a DC component V of input
0, the first AC compounent and the second AC compounent are also increased outward, equal and opposite in direction, the opposite direction of the first AC compounent and the second AC compounent.
In actual applications, the first AC compounent and the second AC compounent can be produced by the inside of side circuit, for example provided by the output of oscillator, so just can in side circuit, not produce a signal source, output on integrated circuit does not affect, and, apply after the first AC compounent and the second AC compounent, due to equal and opposite in direction, the opposite direction of two AC compounent, the current average of the input of the base stage of current mirror all crystals pipe is still V
0, identical with transistorized base stage input in existing biasing means, in addition, the base voltage of all crystals pipe is less than collector voltage, makes transistor in circuit in forward workspace, i.e. and forward bias is become in transmitting, and current collection is become reverse bias.
In the embodiment of the present application, for sake of convenience, the first quantity can be n transistor, n is even number, and the first quantity can be less than total quantity also can equal total quantity, i.e. n≤m, in n transistorized base stage, after difference input AC component, the total current of collector can be expressed as:
For checking conveniently, in the embodiment of the present application, get n=m, (2) formula can be expressed as again:
By in (1) formula substitution (3) formula, the total current of transistor collector can be expressed as again:
Utilize following Taylor expansion formula, (4) formula launched,
After expansion, can be shown below:
Can be found out by (6) formula, the collector total current being obtained by complementary biasing means is always large than the collector total current of tradition biasing, i.e. i
c, 2>i
c, 1.
Above-mentioned is to have chosen all transistors in current mirroring circuit to carry out complementation biasing, in the time that a selection part is wherein carried out complementation biasing, because the transistorized collector current of the equivalent amount in the transistorized collector current not being selected and classic method equates, and the transistorized collector current that carries out complementary biasing is greater than traditional biasing means, therefore, selected part transistor carries out complementation biasing, and the collector total current obtaining is also greater than classic method.
The embodiment of the present application also provides a kind of current mirror, the electrical block diagram of a kind of current mirror that Fig. 4 provides for the embodiment of the present application, and as shown in Figure 4, this current mirror comprises: transistor circuit 1, sorting circuit 2 and biasing circuit 3, wherein:
Transistor circuit 1 comprises even number transistor, i.e. m transistor, and the base stage of all crystals pipe is as the input end of current mirroring circuit, and the collector of all crystals pipe is as the output terminal of transistor circuit, and the emitter of all crystals pipe is connected with ground level;
Sorting circuit 2 is for selecting transistor circuit the first quantity transistor, and by the first quantity transistor according to point mode be divided into two parts, wherein, the first quantity is even number, in actual applications, sorting circuit can be the multistage wire being connected from different transistorized base stages, can select different transistors by connecting different wires;
Biasing circuit 3 is connected with sorting circuit, for generating DC component and DC component being outputed to the first quantity transistorized base stage; And generate the first AC compounent and the second AC compounent, and the first AC compounent is outputed in the transistorized base stage of Part I, be input to V
bPin, the second AC compounent is outputed in the transistorized base stage of Part II, be input to V
bNin, the first AC compounent and the second AC compounent equal and opposite in direction, opposite direction, in actual applications, current mirroring circuit is generally connected in other circuit, and biasing circuit can be just the circuit that can produce DC component and different AC compounent.
In above-mentioned current mirror, the second quantity can be less than total quantity, also can equal total quantity, and in concrete checking computations process and method embodiment, principle is consistent, repeats no more here.
The current mirror that the application provides can be inputted different AC compounent by sorting circuit and biasing circuit in transistor, thereby can obtain larger output current.
It should be noted that, in this article, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thereby the process, method, article or the equipment that make to comprise a series of key elements not only comprise those key elements, but also comprise other key elements of clearly not listing, or be also included as the intrinsic key element of this process, method, article or equipment.The in the situation that of more restrictions not, the key element being limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment that comprises described key element and also have other identical element.
It should be noted that, the above is only a part of preferred embodiment of present techniques scheme, make those skilled in the art can fully understand or realize the application, instead of whole embodiment, General Principle as defined herein can, in the case of not departing from the application's spirit or scope, realize in other embodiments.Therefore; based on above embodiment; for those skilled in the art; do not depart from the application's principle, do not making under creative work prerequisite, can also make multiple apparent amendment and retouching; the every other embodiment obtaining by these amendments and retouching; can be applied to present techniques scheme, the realization that these do not affect the application, all should belong to the application's protection domain.Therefore, the application will can not be restricted to these embodiment shown in this article, but will accord with principle disclosed herein and features of novelty the widest consistent scope.
Above the application is described in detail, application herein can be set forth by principle and the embodiment of specific case to the application, the explanation of above embodiment is just for helping to understand the application's method and core concept thereof, simultaneously, for one of ordinary skill in the art, according to the application's thought, all will change in specific embodiments and applications, in sum, this description should not be construed as the restriction to the application.
Claims (10)
1. the complementary biasing means of current mirror, for the transistor of current mirroring circuit is setovered, it is characterized in that, described transistorized total quantity is even number, described in even number, transistorized emitter is connected with ground level, described in even number, transistorized base stage is as current input terminal, and transistorized collector is as current output terminal described in even number, and described complementary biasing means comprises:
A DC component of the current input terminal of all crystals pipe input in current mirroring circuit;
Select the first quantity transistor in described current mirroring circuit, described the first quantity is even number;
By the first quantity transistor according to point mode be divided into two parts;
In transistor described in the first quantity, in the transistorized base stage of Part I, input the first AC compounent;
In transistor described in the first quantity, in the transistorized base stage of Part II, input the second AC compounent, described the first AC compounent and the second AC compounent equal and opposite in direction, opposite direction.
2. method according to claim 1, is characterized in that, described the first quantity is less than total quantity.
3. method according to claim 1, is characterized in that, described the first quantity equals total quantity.
4. method according to claim 1, is characterized in that, described transistorized parameter is identical.
5. method according to claim 1, is characterized in that, described transistor is NPN transistor.
6. method according to claim 1, is characterized in that, described transistor is PNP transistor.
7. a current mirror, is characterized in that, described current mirror comprises: transistor circuit, sorting circuit and biasing circuit, wherein:
Described transistor circuit comprises even number transistor, and described transistorized base stage is as the input end of described transistor circuit, and described transistorized collector is as the output terminal of described transistor circuit, and described transistorized emitter is connected with ground level;
Described sorting circuit is used for selecting described transistor circuit the first quantity transistor, and by the first quantity transistor according to point mode be divided into two parts, wherein, described the first quantity is even number;
Described biasing circuit is connected with described sorting circuit, for generating DC component and DC component being outputed to the first quantity transistorized base stage; And generate the first AC compounent and the second AC compounent, and described the first AC compounent is outputed in the transistorized base stage of Part I, the second AC compounent is outputed in the transistorized base stage of Part II to the first AC compounent and the second AC compounent equal and opposite in direction, opposite direction.
8. current mirror according to claim 7, is characterized in that, described the first quantity is less than total quantity.
9. current mirror according to claim 7, is characterized in that, described the first quantity equals total quantity.
10. the current mirror described according to Claim 8 or 9 any one, is characterized in that, described transistorized parameter is identical.
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|---|---|---|---|
| CN201210587420.5A CN103076838B (en) | 2012-12-28 | 2012-12-28 | Current mirror and complementary bias method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6489827B1 (en) * | 2000-10-30 | 2002-12-03 | Marvell International, Ltd. | Reduction of offset voltage in current mirror circuit |
| CN201035440Y (en) * | 2007-03-31 | 2008-03-12 | 华为技术有限公司 | Current mirror |
| CN202306379U (en) * | 2011-11-02 | 2012-07-04 | 国民技术股份有限公司 | Current mirroring circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7936208B2 (en) * | 2008-07-31 | 2011-05-03 | International Business Machines Corporation | Bias circuit for a MOS device |
| US8618787B1 (en) * | 2010-12-16 | 2013-12-31 | Xilinx, Inc. | Current mirror and high-compliance single-stage amplifier |
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- 2012-12-28 CN CN201210587420.5A patent/CN103076838B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6489827B1 (en) * | 2000-10-30 | 2002-12-03 | Marvell International, Ltd. | Reduction of offset voltage in current mirror circuit |
| CN201035440Y (en) * | 2007-03-31 | 2008-03-12 | 华为技术有限公司 | Current mirror |
| CN202306379U (en) * | 2011-11-02 | 2012-07-04 | 国民技术股份有限公司 | Current mirroring circuit |
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